CN105789010A - Plasma processing device and plasma distribution adjustment method - Google Patents
Plasma processing device and plasma distribution adjustment method Download PDFInfo
- Publication number
- CN105789010A CN105789010A CN201410836727.3A CN201410836727A CN105789010A CN 105789010 A CN105789010 A CN 105789010A CN 201410836727 A CN201410836727 A CN 201410836727A CN 105789010 A CN105789010 A CN 105789010A
- Authority
- CN
- China
- Prior art keywords
- plasma
- pole
- support portion
- ring
- connecting rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a plasma processing device. The plasma processing device comprises a reaction cavity chamber and a driving unit, wherein the reaction cavity chamber comprises a base, a combined shielding ring and a plurality of fork-shaped connection rods, the base is used for carrying a substrate to be processed, the combined shielding ring is arranged around the periphery of the substrate and comprises an inner ring and an outer ring, the upper end of each fork-shaped connection rod is divided into an inner strut and an outer strut, the outer strut is in correspondence to the outer ring, the inner strut is in correspondence to the inner ring, a support part is arranged at the top end of each strut, the height of the support part at the outer strut is higher than the height of the support part at the inner strut, and the driving unit drives the fork-shaped connection rods to vertically move between a first position and a second position; when the fork-shaped connection rods are arranged at the first position, the support parts of the two strut are not in contact with the combined shielding ring; and when the fork-shaped connection rods are risen to the second position, the outer ring props against the support part of the outer strut, and the inner ring props against the support part of the inner strut. By the plasma processing device, the plasma distribution uniformity on the substrate surface can be improved.
Description
Technical field
The present invention relates to semiconductor processing equipment and method, particularly to a kind of method of plasma processing apparatus and the adjustment plasma distribution applying this process device.
Background technology
Plasma processing apparatus is widely used in various semiconductor fabrication process, for instance depositing operation (such as chemical vapour deposition (CVD)), etching technics (such as dry etching) etc..For plasma etch process, Fig. 1 illustrates the structural representation of a kind of inductively coupled plasma etching device of prior art.Reaction chamber 10 top has insulation cover plate 11, is provided with the electrostatic chuck 14 for clamping pending substrate W bottom reaction chamber 10, and air admission unit 12 is arranged at below the lateral wall insulation cover plate 11 of reaction chamber 10.Insulation cover plate 11 arranges inductance-coupled coil 13, coil is connected with radio frequency source (not shown) by adapter (not shown), the magnetic field of alternation is produced by passing into radio-frequency current in coil 13, and then generate electric field in reaction chamber 10, the reacting gas being entered reaction chamber 10 by air admission unit 11 is ionized and generates plasma so that pending substrate W surface is carried out Cement Composite Treated by Plasma.
But, in actual applications, the uniformity using what above-mentioned plasma device produced plasma density is unsatisfactory, and the density of produced plasma has marginal area and is distributed higher than the feature of zone line.And the speed owing to substrate carrying out Cement Composite Treated by Plasma is distributed relevant to plasma density distribution or atomic group, will ultimately result in the situation that plasma-treating technology is uneven: such as, substrate edge etching or processing speed are fast, and zone line etching or processing speed are slow.It is inconsistent that this is easy for causing within the scope of whole substrate device feature size, and technology controlling and process and yield rate to semiconductor device manufacture all have a significant impact.Therefore, the uniformity how improving plasma processing apparatus plasma density is that those skilled in the art are badly in need of solving the technical problem that at present.
Accordingly, it is desirable to provide the plasma processing apparatus of a kind of improvement, the uniformity of plasma distribution can be improved.
Summary of the invention
Present invention is primarily targeted at the defect overcoming prior art, it is provided that a kind of plasma processing apparatus being obtained in that the comparatively uniform plasma density of distribution and atomic group Density Distribution.
For reaching above-mentioned purpose, the present invention provides a kind of plasma processing apparatus, and it comprises reaction chamber and driver element.Wherein, reaction chamber includes: be located in described reaction chamber, for loading the pedestal of pending substrate；Around the moveable combination type shield ring that the outer circumferential side of described substrate is arranged, it includes internal ring and outer shroud, and the internal diameter of described outer shroud is more than the internal diameter of described internal ring；And multiple forked connecting rod, its upper end is divided into inside and outside two poles, and wherein the position of outside pole is corresponding to described outer shroud, and the position of inner side pole corresponds to described internal ring；Wherein, the top of each described pole has a support portion, and the height of the support portion of described outside pole is more than the height of the support portion of described inner side pole.Described driver element is connected with the lower end of described forked connecting rod, is used for driving described forked connecting rod to vertically move between the first position and the second position；Wherein when described forked connecting rod is positioned at described primary importance, the support portion of said two pole does not all contact with described combination type shield ring；When described forked connecting rod rises to the described second position, described outer shroud supports and pastes the support portion of described outside pole, described internal ring supports the support portion pasting described inner side pole.
Preferably, described reaction chamber also includes a positioning component, the depressed part that described positioning component includes laying respectively in described outer shroud and internal ring, supplies the support portion of described outside pole and inner side pole to insert.
Preferably, described reaction chamber also includes a positioning component, described positioning component includes respectively from the upwardly extending contact pin in the support portion of described outside pole and inner side pole, and lays respectively at the slot inserted in described outer shroud and internal ring, accordingly for the contact pin of described outside pole and inner side pole；Described support portion not can be inserted into the slot of its correspondence.
Preferably, described slot is through slot or blind slot, when described slot is blind slot, can be inserted into the length of the described contact pin of this blind slot groove depth less than or equal to described blind slot.
Preferably, when described forked connecting rod is positioned at described primary importance, described outer shroud and internal ring are bonded to each other and make described combination type shield ring be integrally forming.
Preferably, when described forked connecting rod is positioned at described primary importance, described combination type shield ring is by described pedestal or the non-conductive ring support covering described pedestal.
Preferably, the height of the support portion of described outside pole is more than 3～200mm of the support portion of described inner side pole.
Preferably, when described forked connecting rod is positioned at the described second position, the lower surface of described internal ring is positioned at-5～20mm above the upper surface of described substrate.
Preferably, described combination type shield ring and described forked connecting rod are that plasma-resistant material is made or surface has plasma resistant coating.
According to a further aspect in the invention, additionally provide the control method of a kind of plasma distribution being applied to above-mentioned plasma processing apparatus, including:
Described forked connecting rod is risen to the described second position by described primary importance, is adjusted to the difference in height of described outside pole and inner side pole with the difference in height by described outer shroud Yu internal ring；
Regulate the cross direction profiles of the process gas in described reaction chamber and plasma thereof by described outer shroud and regulated the plasma reaction speed of described substrate edge by described internal ring.
Compared to prior art, the beneficial effects of the present invention is the difference in height by internal ring in the lift adjustment combination type shield ring of forked connecting rod Yu outer shroud, utilize to be utilized respectively the distribution of outer shroud adjusting process gas and plasma thereof internal ring to adjust the plasma reaction speed of substrate edge, finally make substrate surface Cement Composite Treated by Plasma rate uniform.
Accompanying drawing explanation
Fig. 1 is the structural representation of the plasma processing apparatus of prior art；
Fig. 2 a is the structural representation of plasma processing apparatus when forked connecting rod is positioned at primary importance of one embodiment of the invention；
Fig. 2 b is the structural representation of plasma processing apparatus when forked connecting rod is positioned at the second position of one embodiment of the invention；
Fig. 3 be one embodiment of the invention plasma processing apparatus in the connection diagram of forked connecting rod and combination type shield ring.
Detailed description of the invention
For making present disclosure clearly understandable, below in conjunction with Figure of description, present disclosure is described further.Certainly the invention is not limited in this specific embodiment, the general replacement known by those skilled in the art is also covered by protection scope of the present invention.
Fig. 2 a and Fig. 2 b is the structural representation of plasma processing apparatus according to an embodiment of the invention.Should be appreciated that, plasma processing apparatus in the present invention can be the devices such as plasma etching, plasma physical vapor deposition, plasma chemical vapor deposition, plasma surface cleaning, plasma processing apparatus is merely exemplary, it can include less or more element, or the arrangement of this element is likely to that indicated in the drawings identical or different.
As it can be seen, have insulation cover plate 21 above reaction chamber 20, insulation cover plate 21 is generally ceramic dielectric material.Reaction chamber 20 sidewall is provided with near top place for the air admission unit 22 to reaction chamber 20 internal input process gas.The pedestal 24 for loading pending substrate W it is provided with bottom reaction chamber 20.The inductance-coupled coil 23 configured above in the outside of insulation cover plate 21, there is provided radio-frequency current to generate electric field in reaction chamber 20 by not shown radio frequency source to coil 23, with this process gas being incorporated in chamber by air admission unit 22 ionized and produce plasma.Additionally, in the present embodiment, air admission unit 22 is formed in the sidewall of reaction chamber 20 near insulation cover plate place, but it can also be formed in insulation cover plate in other embodiments.Moveable combination type shield ring 25 and multiple forked connecting rod 26 it is additionally provided with in reaction chamber 20.Combination type shield ring 25 is arranged around the outer circumferential side of substrate W, and including internal ring 251 and outer shroud 252, the internal diameter of outer shroud 252 is greater than the internal diameter of internal ring 251.The internal diameter of outer shroud 252 and internal ring 251 can according to technique need be designed as be all higher than substrate diameter, be respectively less than substrate diameter or outer shroud 252 internal diameter more than substrate diameter internal ring 251 internal diameter less than substrate diameter.Owing to combination type shield ring 25 is exposed to all the time in processing environment in plasma treatment process, plasma-resistant material is preferably adopted to make or have plasma resistant coating, and with not easily in the chamber produce pollution be preferred, plasma-resistant material can be conductive material such as aluminum, or dielectric material is such as ceramic or quartzy.Heretofore described forked connecting rod 26 refers to upper end and is divided into two poles, lower end to merge into the connecting rod of shape and structure of a pole.In the present embodiment, the upper end of forked connecting rod 26 is inside and outside two poles 261,262, and wherein the position of outside pole 262 is corresponding to outer shroud 252, and the position of inner side pole 261 corresponds to internal ring 251.The top of each pole has the support portion of an outer shroud that can support correspondence or internal ring, in the present embodiment, pole is cylindricality, support portion is the top levels of columnar supports, in other embodiments, the cross sectional shape of pole can be T-shaped, then has bigger top levels as support portion.It should be noted that the height of the support portion of outside pole is greater than the height of the support portion of inner side pole, in general, both differences in height are 3～200mm.Driver element 30 is connected with the lower end of forked connecting rod 26, is used for driving forked connecting rod to vertically move between the first position and the second position.
Fig. 2 a show schematic diagram when forked connecting rod is positioned primary importance, now the support portion of two poles 261,262 does not all contact with combination type shield ring 25, combination type shield ring is the adjacent substrate W by pedestal or the non-conductive ring support covering pedestal preferably, " dead ring " herein can be cover ring (coverring), shield ring (shadowring), focusing ring (focusring), edge ring (edgering) etc., it is not any limitation as.As previously mentioned, when forked connecting rod 26 is positioned primary importance, outer shroud 252 and internal ring 251 adjacent substrate, now, outer shroud 252 and internal ring 251 both can be bonded to each other and make combination type shield ring 25 be integrally forming, outer shroud 252 internal diameter can also be set more than internal ring 251 external diameter, certain distance is set between inner and outer ring.The accumulation avoiding polymer between inner and outer ring gap is should be noted during design.As shown in the figure, in the present embodiment, the external diameter of internal ring 251 is equal with the internal diameter of outer shroud 252, therefore the inner peripheral surface of outer shroud 252 is fitted each other with the outer peripheral face of internal ring 521, and combination type shield ring now only plays the effect or inoperative of the Cement Composite Treated by Plasma speed regulating substrate edge.Additionally, forked connecting rod 26 is to be located in movably in pedestal 24 in Fig. 2 a, but corresponding to the different structure of pedestal 24, forked connecting rod 26 can also be arranged in movably in the dead ring being circumferentially positioned at around pedestal, or is exposed in chamber 20.
Fig. 2 b show schematic diagram when forked connecting rod rises to the second position, now outer shroud 252 supports patch the outside support portion of pole 262, internal ring 251 and then supports the support portion of patch inner side pole 261, thus by difference in height that the larger height difference between outer shroud 252 and internal ring 251 is between outside pole 262 and inner side pole 261.Now, the upper surface of internal ring 251 is positioned at-5～20mm above the upper surface of substrate W, plays stop portions plasma, thus the effect regulating plasma density near substrate, reduction substrate edge reaction rate can be played.And owing to outer shroud 252 is under the support of lateral branch bar 262, highly it is significantly larger than the height of internal ring 251, now outer shroud 252 is for carrying out transverse barriers to the process gas injected in reaction chamber, process gas is guided to reaction chamber central area, process gas is dissociated the distribution in addition lateral confinement of the plasma generated simultaneously, avoid process gas and in reaction chamber, not will be completely dissociated into plasma namely by pump drainage to the problem outside reaction chamber, reduce process gas and the plasma distribution density of reaction chamber marginal area simultaneously, improve the plasma distribution density of central area, improve the distribution consistency degree of substrate W surface plasma.Further, process gas and plasma thereof are by the backward lower diffusion of outer shroud 252, again being retrained by internal ring 251 near substrate W, thus regulating process gas and the plasma distribution density thereof of substrate edge, the reaction rate finally making the whole surface of substrate W is uniform.In addition, owing to when forked connecting rod 26 is positioned the second position, major part is exposed in plasma, therefore preferably forked connecting rod is also adopted by plasma-resistant material and makes or surface has the coating of plasma-resistant material, and with not easily in the chamber produce pollution be preferred, plasma-resistant material can be conductive material such as aluminum, or dielectric material is such as ceramic or quartzy.
In the embodiment shown in Fig. 2 a and 2b, the support portion of inner side pole 261 and outside pole 262 is its top levels, the stable position keeping outer shroud 252 and internal ring 251 in process for making forked connecting rod 26 vertically move, prevent sliding or shake, in reaction chamber, preferably also set up a positioning component, for, in forked connecting rod 26 uphill process, strengthening the stability that outer shroud/internal ring is supported by the support portion of outboard/inboard pole.Please continue to refer to Fig. 3, positioning component includes the upwardly extending contact pin 272,271 from the support portion of outside pole 262 and inner side pole 261 respectively, and lays respectively at the slot 282,281 inserted in outer shroud 252 and internal ring 251, accordingly for the contact pin 272,271 of outside pole and inner side pole.The size of the corresponding contact pin of size of slot matches.It should be noted that support portion is not can be inserted in the slot of its correspondence, as being sized larger than the size of slot, thus inner and outer ring can be made to be fastened on the support portion of correspondence through corresponding contact pin.In the present embodiment, slot 282,281 is through slot, the height of the contact pin 271 of insertion internal ring slot 281 should be less than the difference in height of the support portion of outside pole and inner side pole, to avoid contact pin 271 and outer shroud when forked connecting rod rises to the second position to interfere or be inserted in outer shroud the effect of contraction affecting outer shroud.Certain slot 282,282 can also be blind slot (namely not through slot), as long as the length of contact pin is less than or equal to the degree of depth of corresponding blind slot, equally can by the cooperation of slot and contact pin by inner and outer ring stable position on the support portion of corresponding pole.Additionally, in other embodiments, positioning component may also be the depressed part laying respectively in outer shroud 252 and internal ring 251, supplying the support portion of outside pole 262 and inner side pole 261 to insert, and the size of depressed part matches with the size of corresponding support portion.By when forked connecting rod rises to the second position, support portion is embedded into corresponding depressed part to realize the strong fix of inner and outer ring.
By above-mentioned plasma processing apparatus, it is possible to according to technique need in reaction chamber plasma distribution regulated, specifically comprise the following steps that
First, just forked connecting rod is risen to the second position by primary importance, and the difference in height of outer shroud Yu internal ring is adjusted to the difference in height of outside pole and inner side pole.Then pass through the outer shroud cross direction profiles to the process gas regulating in reaction chamber and plasma thereof, regulated the plasma reaction speed of substrate edge by internal ring.
In sum, the plasma processing apparatus of the present invention, utilize combination type shield ring and the cooperation of forked connecting rod, the internal ring of combination type shield ring and outer shroud can be positioned differing heights, thus in plasma-treating technology, utilize the plasma reaction speed adjusting substrate edge further of covering of internal ring so that outer shroud adjusts the distribution of process gas and plasma thereof in reaction chamber, the substrate center region and the plasma density of marginal area that make correspondence are uniformly distributed, and then make plasma to the process of substrate evenly.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are illustrated only for the purposes of explanation; it is not limited to the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection domain that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a plasma processing apparatus, comprises:
Reaction chamber, comprising:
For loading the pedestal of pending substrate, it is located in described reaction chamber；
Moveable combination type shield ring, the outer circumferential side around described substrate is arranged, and it includes internal ring and outer shroud, and the internal diameter of described outer shroud is more than the internal diameter of described internal ring；And
Multiple forked connecting rods, its upper end is divided into inside and outside two poles, and wherein the position of outside pole is corresponding to described outer shroud, and the position of inner side pole corresponds to described internal ring；Wherein, the top of each described pole has a support portion, and the height of the support portion of described outside pole is more than the height of the support portion of described inner side pole；
Driver element, is connected with the lower end of described forked connecting rod, is used for driving described forked connecting rod to vertically move between the first position and the second position；Wherein when described forked connecting rod is positioned at described primary importance, the support portion of said two pole does not all contact with described combination type shield ring；When described forked connecting rod rises to the described second position, described outer shroud supports and pastes the support portion of described outside pole, described internal ring supports the support portion pasting described inner side pole.
2. plasma processing apparatus according to claim 1, it is characterized in that, described reaction chamber also includes a positioning component, the depressed part that described positioning component includes laying respectively in described outer shroud and internal ring, supplies the support portion of described outside pole and inner side pole to insert.
3. plasma processing apparatus according to claim 1, it is characterized in that, described reaction chamber also includes a positioning component, described positioning component includes respectively from the upwardly extending contact pin in the support portion of described outside pole and inner side pole, and lays respectively at the slot inserted in described outer shroud and internal ring, accordingly for the contact pin of described outside pole and inner side pole；Described support portion not can be inserted into the slot of its correspondence.
4. plasma processing apparatus according to claim 3, it is characterised in that described slot is through slot or blind slot, when described slot is blind slot, can be inserted into the length of the described contact pin of this blind slot groove depth less than or equal to described blind slot.
5. plasma processing apparatus according to claim 1, it is characterised in that when described forked connecting rod is positioned at described primary importance, described outer shroud and internal ring are bonded to each other and make described combination type shield ring be integrally forming.
6. plasma processing apparatus according to claim 3, it is characterised in that when described forked connecting rod is positioned at described primary importance, described combination type shield ring is by described pedestal or the non-conductive ring support covering described pedestal.
7. plasma processing apparatus according to claim 1, it is characterised in that the height of the support portion of described outside pole is more than the height 3～200mm of the support portion of described inner side pole.
8. plasma processing apparatus according to claim 1, it is characterised in that when described forked connecting rod is positioned at the described second position, the upper surface of described internal ring is positioned at-5～20mm above the upper surface of described substrate.
9. plasma processing apparatus according to claim 1, it is characterised in that described combination type shield ring and described forked connecting rod are that plasma-resistant material is made or surface has plasma resistant coating.
10. a control method for plasma distribution, is applied to the plasma processing apparatus as described in any one of claim 1～9, it is characterised in that including:
Described forked connecting rod is risen to the described second position by described primary importance, is adjusted to the difference in height of described outside pole and inner side pole with the difference in height by described outer shroud Yu internal ring；
Regulate the cross direction profiles of the process gas in described reaction chamber and plasma thereof by described outer shroud and block the plasma of crystal round fringes by described internal ring and regulate the plasma reaction speed of described substrate edge.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410836727.3A CN105789010B (en) | 2014-12-24 | 2014-12-24 | Plasma processing apparatus and the adjusting method of plasma distribution |
| TW104128008A TWI578369B (en) | 2014-12-24 | 2015-08-26 | Plasma processing device and regulating method of plasma distribution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410836727.3A CN105789010B (en) | 2014-12-24 | 2014-12-24 | Plasma processing apparatus and the adjusting method of plasma distribution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105789010A true CN105789010A (en) | 2016-07-20 |
| CN105789010B CN105789010B (en) | 2017-11-10 |
Family
ID=56389767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410836727.3A Active CN105789010B (en) | 2014-12-24 | 2014-12-24 | Plasma processing apparatus and the adjusting method of plasma distribution |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105789010B (en) |
| TW (1) | TWI578369B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| CN109473333A (en) * | 2018-10-08 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10600623B2 (en) | 2018-05-28 | 2020-03-24 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| CN111508803A (en) * | 2020-04-23 | 2020-08-07 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber, wafer edge protection method and semiconductor equipment |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US11101115B2 (en) | 2019-04-19 | 2021-08-24 | Applied Materials, Inc. | Ring removal from processing chamber |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| US11393710B2 (en) | 2016-01-26 | 2022-07-19 | Applied Materials, Inc. | Wafer edge ring lifting solution |
| CN115881506A (en) * | 2023-03-02 | 2023-03-31 | 深圳市新凯来技术有限公司 | Plasma adjusting device and semiconductor etching equipment |
| CN117116816A (en) * | 2023-10-24 | 2023-11-24 | 上海谙邦半导体设备有限公司 | Air inlet device and air inlet method |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
| US12094752B2 (en) | 2016-01-26 | 2024-09-17 | Applied Materials, Inc. | Wafer edge ring lifting solution |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI704252B (en) * | 2017-09-04 | 2020-09-11 | 台灣積體電路製造股份有限公司 | Lift device, chemical vapor deposition apparatus and method |
| JP7134104B2 (en) * | 2019-01-09 | 2022-09-09 | 東京エレクトロン株式会社 | Plasma processing apparatus and mounting table for plasma processing apparatus |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0693769A2 (en) * | 1994-07-18 | 1996-01-24 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter |
| CN102056395A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN102056394A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN202116643U (en) * | 2011-06-20 | 2012-01-18 | 理想能源设备(上海)有限公司 | Substrate processing device |
| CN102800547A (en) * | 2011-05-27 | 2012-11-28 | 中微半导体设备(上海)有限公司 | Modulable focus ring and method for adjusting plasma processor by using focus ring |
| CN103460350A (en) * | 2011-03-14 | 2013-12-18 | 等离子瑟姆有限公司 | Method and apparatus for plasma dicing a semi-conductor wafer |
| WO2014185313A1 (en) * | 2013-05-15 | 2014-11-20 | 東京エレクトロン株式会社 | Plasma etching device and plasma etching method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060278339A1 (en) * | 2005-06-13 | 2006-12-14 | Lam Research Corporation, A Delaware Corporation | Etch rate uniformity using the independent movement of electrode pieces |
| TWM343237U (en) * | 2007-02-01 | 2008-10-21 | Applied Materials Inc | Mask etch plasma reactor with cathode lift pin assembly |
| US8597462B2 (en) * | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
| US9076826B2 (en) * | 2010-09-24 | 2015-07-07 | Lam Research Corporation | Plasma confinement ring assembly for plasma processing chambers |
| CN103730318B (en) * | 2013-11-15 | 2016-04-06 | 中微半导体设备(上海)有限公司 | A kind of method of crystal round fringes guard ring and minimizing crystal round fringes particle |
-
2014
- 2014-12-24 CN CN201410836727.3A patent/CN105789010B/en active Active
-
2015
- 2015-08-26 TW TW104128008A patent/TWI578369B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0693769A2 (en) * | 1994-07-18 | 1996-01-24 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter |
| CN102056395A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN102056394A (en) * | 2009-10-27 | 2011-05-11 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103460350A (en) * | 2011-03-14 | 2013-12-18 | 等离子瑟姆有限公司 | Method and apparatus for plasma dicing a semi-conductor wafer |
| CN102800547A (en) * | 2011-05-27 | 2012-11-28 | 中微半导体设备(上海)有限公司 | Modulable focus ring and method for adjusting plasma processor by using focus ring |
| CN202116643U (en) * | 2011-06-20 | 2012-01-18 | 理想能源设备(上海)有限公司 | Substrate processing device |
| WO2014185313A1 (en) * | 2013-05-15 | 2014-11-20 | 東京エレクトロン株式会社 | Plasma etching device and plasma etching method |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12094752B2 (en) | 2016-01-26 | 2024-09-17 | Applied Materials, Inc. | Wafer edge ring lifting solution |
| US11393710B2 (en) | 2016-01-26 | 2022-07-19 | Applied Materials, Inc. | Wafer edge ring lifting solution |
| US10103010B2 (en) | 2016-12-16 | 2018-10-16 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10504702B2 (en) | 2016-12-16 | 2019-12-10 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10991556B2 (en) | 2017-02-01 | 2021-04-27 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US11887879B2 (en) | 2017-09-21 | 2024-01-30 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US10600623B2 (en) | 2018-05-28 | 2020-03-24 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US10790123B2 (en) | 2018-05-28 | 2020-09-29 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11728143B2 (en) | 2018-05-28 | 2023-08-15 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| CN109473333B (en) * | 2018-10-08 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| CN109473333A (en) * | 2018-10-08 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| US11101115B2 (en) | 2019-04-19 | 2021-08-24 | Applied Materials, Inc. | Ring removal from processing chamber |
| US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
| CN111508803B (en) * | 2020-04-23 | 2023-01-17 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber, wafer edge protection method and semiconductor equipment |
| CN111508803A (en) * | 2020-04-23 | 2020-08-07 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber, wafer edge protection method and semiconductor equipment |
| CN115881506A (en) * | 2023-03-02 | 2023-03-31 | 深圳市新凯来技术有限公司 | Plasma adjusting device and semiconductor etching equipment |
| CN117116816A (en) * | 2023-10-24 | 2023-11-24 | 上海谙邦半导体设备有限公司 | Air inlet device and air inlet method |
| CN117116816B (en) * | 2023-10-24 | 2024-01-23 | 上海谙邦半导体设备有限公司 | Air inlet device and air inlet method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105789010B (en) | 2017-11-10 |
| TWI578369B (en) | 2017-04-11 |
| TW201624525A (en) | 2016-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105789010A (en) | Plasma processing device and plasma distribution adjustment method | |
| KR102542551B1 (en) | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus | |
| TWI478260B (en) | Variable volume plasma processing chamber and associated methods | |
| CN106920729B (en) | A kind of plasma processing apparatus and method of uniform etching substrate | |
| EP1401014B1 (en) | Plasma processing device, and method of cleaning the same | |
| US20170213753A1 (en) | Controlling the rf amplitude of an edge ring of a capacitively coupled plasma process device | |
| CN103227091B (en) | Plasma processing apparatus | |
| TWI633573B (en) | Plasma processing device and method | |
| KR20130085984A (en) | Plasma processing apparatus | |
| KR102111504B1 (en) | Substrate processing apparatus and method | |
| US10388528B2 (en) | Non-ambipolar electric pressure plasma uniformity control | |
| US10115566B2 (en) | Method and apparatus for controlling a magnetic field in a plasma chamber | |
| KR101753620B1 (en) | Controlling azimuthal uniformity of etch process in plasma processing chamber | |
| CN108206143B (en) | Plasma processor, etching uniformity adjusting system and method | |
| US9293926B2 (en) | Plasma processing systems having multi-layer segmented electrodes and methods therefor | |
| US10886097B2 (en) | Plasma processing apparatus and plasma processing method | |
| CN104217914A (en) | Plasma processing device | |
| CN105632861B (en) | Inductance coupling plasma processing device and method for etching plasma | |
| KR20090008932A (en) | Plasma reactor having multi-core plasma generation plate | |
| TW201604922A (en) | Real-time edge encroachment control for wafer bevel | |
| KR102053792B1 (en) | Plasma processing apparatus | |
| JP3618333B2 (en) | Plasma generator | |
| KR100844150B1 (en) | Plasma processing apparatus and method | |
| KR101697481B1 (en) | Plasma processing apparatus | |
| KR101184859B1 (en) | Hybrid plasma source and plasma generating apparatus using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder |