TWI704252B - Lift device, chemical vapor deposition apparatus and method - Google Patents

Abstract

A lift device for lifting a substrate in a chemical vapor deposition apparatus is provided. The lift device includes a drive mechanism, a lift assembly, a coupling member, and a shielding member. The lift assembly is configured to lift the substrate under the drive of the drive mechanism. The coupling member is configured to couple the lift assembly and the drive mechanism. The shielding member is configured to shield the coupling member to prevent the coupling member from being exposed to a process gas in the chemical vapor deposition apparatus.

Description

Lifting device, chemical vapor deposition device and method

The embodiment of the present invention relates to a semiconductor technology, and particularly relates to a lifting device, a chemical vapor deposition (Chemical Vapor Deposition, CVP) device and method.

Semiconductor devices are used in a variety of electronic applications, such as personal computers, mobile phones, digital cameras, and other electronic equipment. Semiconductor devices are usually manufactured by sequentially depositing insulating or dielectric layer materials, conductive layer materials, and semiconductor layer materials on a semiconductor substrate, and then patterning the formed layers of various materials using a lithography process to form circuit components and parts On this semiconductor substrate. With advances in the materials and design of integrated circuits, many generations of integrated circuits have been developed. Compared to the previous generation, each generation has smaller and more complex circuits. However, these developments have increased the complexity of processing and manufacturing integrated circuits. In order for these developments to be realized, similar developments in the manufacturing and production of integrated circuits are also necessary.

For example, High-Density Plasma Chemical Vapor Deposition (HDPCVD) is a technology that uses high-density plasma for chemical vapor deposition. In order to form high-density plasma, radio frequency power is usually used to excite the gas mixture and guide plasma ions to the surface of the semiconductor substrate to form a thin film. The main advantage of high-density plasma chemical vapor deposition is that it can form a thin film with good uniformity at a relatively low temperature (for example, about 300°C to about 400°C), so it is widely used in, for example, interconnecting dielectric layers in transistors. Manufacturing.

Although the existing chemical vapor deposition technology and equipment are sufficient to meet their needs, they are still not fully satisfied. Therefore, it is necessary to provide a solution to improve the deposition process.

Some embodiments of the present disclosure provide a lifting device for lifting a substrate in a chemical vapor deposition device. The above-mentioned lifting device includes a driving mechanism, a lifting assembly, a coupling member and a shielding member. The lifting assembly is configured to lift the substrate driven by the driving mechanism. The coupling member is configured to couple the lifting assembly and the driving mechanism. The shielding member is configured to shield the coupling member and prevent the coupling member from being exposed to the processing gas in the chemical vapor deposition apparatus.

Some embodiments of the present disclosure provide a chemical vapor deposition apparatus, including a processing chamber, a carrying platform, a gas supply unit, an exhaust unit, a lifting assembly, a coupling member and a shielding member. The carrying platform is configured to support a substrate in the processing chamber. The gas supply unit is configured to supply a processing gas to the processing chamber to form a thin film on the substrate. The exhaust unit is configured to remove processing gas from the processing chamber. The lifting assembly is configured to lift the substrate under the drive of a driving mechanism to unload the substrate from the carrier platform. The coupling member is configured to couple the lifting assembly and the driving mechanism. The shielding member is configured to cover a part of the coupling member exposed to the processing gas.

Some embodiments of the present disclosure provide a chemical vapor deposition method. The above method includes placing a substrate in a processing chamber. The above method also includes supplying a processing gas into the processing chamber to perform a deposition process on the substrate, wherein the substrate is supported by a carrier platform. The above method further includes after the deposition process, driving a lifting assembly by a driving mechanism to unload the substrate from the carrier platform, wherein the lifting assembly and the driving mechanism are coupled by a coupling member, and the coupling member is shielded The components are shielded to avoid exposure to processing gas. In addition, the above method includes removing the processing gas in the processing chamber.

1.‧‧Chemical Vapor Deposition Equipment

10‧‧‧Processing chamber

10A‧‧‧Shell

10B‧‧‧Gas inlet

10C‧‧‧Gas outlet

11‧‧‧Carrier platform

11A‧‧‧Axle

11B‧‧‧Rotating mechanism

11C‧‧‧Annular penetration hole

12‧‧‧Spray head

12A‧‧‧Opening

13‧‧‧Gas supply unit

14‧‧‧Exhaust unit

15‧‧‧Plasma generation unit

15A‧‧‧RF power source

15B‧‧‧Conductive element

16‧‧‧Lifting components

16A‧‧‧Base frame

16B‧‧‧Lifting thimble

16C‧‧‧Connecting part

16D‧‧‧Card slot structure

17‧‧‧Drive mechanism

17A‧‧‧Drive

17B‧‧‧Pole

18‧‧‧Coupling member/screw

18A‧‧‧Head

18B‧‧‧Thread part

18C‧‧‧First thread

19, 19’, 19”‧‧‧Shielding member

19A‧‧‧Second thread

19B‧‧‧Surface features

19C‧‧‧side

19D‧‧‧side

19E‧‧‧Lock structure

80‧‧‧Chemical vapor deposition method

81-84‧‧‧Operation

D1, D2‧‧‧Thickness

F‧‧‧Air flow

G‧‧‧Gas diffusion path

H‧‧‧Screw hole

L‧‧‧length

R1‧‧‧diameter

R2‧‧‧Inner diameter

P‧‧‧Plasma

S1‧‧‧First end

S2‧‧‧Second end face

W‧‧‧Substrate

Figure 1 is a schematic diagram showing a chemical vapor deposition apparatus according to some embodiments.

Figure 2 is a schematic diagram showing the lifting assembly in Figure 1 unloading the substrate from the carrier platform after the deposition process.

Figure 3 is a schematic diagram showing how the lifting assembly and the driving mechanism are assembled according to some embodiments.

Fig. 4 is a partial schematic diagram showing another view of the assembly of the lifting assembly and the driving mechanism in Fig. 3.

FIG. 5A is an enlarged schematic diagram showing a coupling member according to some embodiments.

FIG. 5B is an enlarged schematic diagram showing a shielding member according to some embodiments.

Figure 6 is a schematic diagram showing a shielding member according to some embodiments.

Figure 7 is a schematic diagram showing a shielding member according to some embodiments.

Fig. 8 shows a flow chart of a chemical vapor deposition method according to some embodiments.

The following disclosure provides many different embodiments or examples to implement different features of this case. The following disclosure describes specific examples of each component and its arrangement to simplify the description. Of course, these specific examples are not meant to be limiting. For example, if the embodiment describes that a first feature is formed on or above a second feature, it means that it may include the case where the first feature is in direct contact with the second feature, or it may include additional features. It is formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact.

Space-related terms used in the following, such as "below", "below", "lower", "above", "higher" and similar terms are used to facilitate the description of the diagram The relationship between one element or feature and another element(s) or feature. In addition to the orientations depicted in the diagrams, these spatially related terms are also intended to include different orientations of the device in use or operation. The device may be turned to different orientations (rotate 90 degrees to obtain other orientations), and the space-related terms used here can be interpreted in the same way.

In addition, the same element numbers and/or words may be used repeatedly in the following different embodiments, and these repetitions are for the purpose of simplification and clarity, and are not used to limit the specific relationship between the different embodiments and/or structures discussed. In the drawings, the shape or thickness of the structure may be enlarged to simplify or facilitate labeling. It must be understood that elements not specifically described or illustrated can exist in various forms well known to those skilled in the art.

FIG. 1 is a schematic diagram showing a chemical vapor deposition apparatus 1 according to some embodiments. The chemical vapor deposition apparatus 1 is suitable for performing a chemical vapor deposition process (hereinafter referred to as a deposition process) on a substrate W. The substrate W may include a semiconductor layer, a conductive layer, and/or an insulating layer. In some embodiments, the substrate W includes stacked semiconductor layers. For example, the substrate W includes a stack of semiconductor layers on an insulator, such as a silicon transistor structure on insulator (SOI), a silicon transistor structure on a sapphire substrate, or a silicon germanium structure on an insulator; or The substrate W includes a stack of semiconductor layers on a glass to form a thin film transistor.

According to some embodiments, the chemical vapor deposition apparatus 1 is a plasma chemical vapor deposition apparatus, such as a high density plasma chemical vapor deposition (HDPCVP) apparatus, plasma enhanced chemical vapor deposition (Plasma-Enhanced Chemical Vapor Deposition) Deposition (PECVD) device or other devices that use plasma to assist the chemical vapor deposition process. The chemical vapor deposition apparatus 1 includes a processing chamber 10, a carrying platform 11, a shower head 12, a gas supply unit 13, an exhaust unit 14, a plasma generating unit 15, a lifting assembly 16 and a Drive mechanism 17. The elements/components of the chemical vapor deposition apparatus 1 described above can be added or omitted, and the present disclosure should not be limited by the embodiments.

In the embodiment of Figure 1, the processing chamber 10 is a plasma processing chamber, which can be used to generate plasma therein to assist the deposition process. The processing chamber 10 includes an airtightly sealable housing 10A, which is configured to accommodate one or more substrates W to be processed. Although not shown, an openable and closable gate is provided on the housing 10A to allow the substrate W to be transported into or out of the processing chamber 10 through a substrate handling device (such as a robotic arm).

The carrying platform 11 is configured to support at least one substrate W in the processing chamber 10. In some embodiments, the carrying platform 11 includes an electrostatic chuck (ESC), and the electrostatic attraction of the opposite charges generated on the substrate W supported by the electrostatic chuck and the carrying platform 11 can hold the substrate W on On the bearing platform 11. In some embodiments, the carrying platform 11 can also hold the substrate W through other mechanisms (such as vacuum suction or mechanical clamps).

In some embodiments, the carrier platform 11 also includes one or more heaters (for example, resistance heating elements) configured to heat the substrate W during the deposition process to promote chemical reactions thereon. In some embodiments, the heat transfer gas can also be supplied between the carrier platform 11 and the substrate W through the gas channel in the carrier platform 11 to enhance the heat transfer effect.

In addition, the carrying platform 11 is supported in the processing chamber 10 by a shaft 11A. In some embodiments, during the deposition process, the spindle 11A can be driven by a rotating mechanism 11B (such as a motor) to make the carrier platform 11 rotate around the spindle 11A to improve the uniformity of film deposition on the substrate W.

The gas supply unit 13 is configured to provide one or more processing gases to the processing chamber 10 to form a thin film (not shown) on the substrate W during the deposition process. In the embodiment of Figure 1, the gas supply unit 13 can be fluidly coupled to a gas inlet 10B on the housing 10A of the processing chamber 10, and the gas supply unit 13 includes a gas storage tank, a gas pipeline, a pump, and a gas controller (For example, valves, flow meters, detectors or other similar components). According to some embodiments, the processing gas (also referred to as precursor gas) includes silyl methane (SiH ₄ ), tungsten hexafluoride (WF6), nitrogen (N ₂ ), nitrous oxide (N ₂ O), or Oxygen (O ₂ ).

In some embodiments, the chemical vapor deposition apparatus 1 may also perform a plasma cleaning process before or after the deposition process. During the plasma cleaning process, the gas supply unit 13 can provide one or more cleaning gases (for example, nitrogen trifluoride (NF ₃ ), hexafluoroethane (C ₂ F ₆ ), or octafluoropropane (C ₃ F ₈ ) ) Into the processing chamber 10 to clean the processing chamber 10. The above-mentioned processing gas and cleaning gas are only examples, and this disclosure is not limited thereto.

The shower head 12 is configured to receive the processing gas or the cleaning gas from the gas supply unit 13 and can evenly distribute the gas around the processing chamber 10. According to some embodiments, the shower head 12 may have a circular design conforming to the shape of the processing chamber 10 or the substrate W, and the circular design has openings 12A evenly distributed around the shower head 12.

The plasma generating unit 15 is configured to excite the above process gas during the deposition process and transform it into plasma (state) P, and then the plasma P can enhance the effect of the chemical vapor deposition process, for example, make it at a lower temperature (for example, Under the conditions of about 300° C. to about 400° C., a chemical reaction can still occur on the surface of the substrate W to form a thin film.

In the embodiment of FIG. 1, the plasma generating unit 15 includes a radio frequency (RF) power source 15A and a conductive element 15B (such as a spiral coil or electrode plate). The conductive element 15B is disposed on the upper portion of the processing chamber 10 and faces the carrying platform 11, and the radio frequency power source 15A is electrically coupled to the conductive element 15B, and can provide a radio frequency signal to the conductive element 15B, thereby making the conductive element 15B and The processing gas between the supporting platforms 11 dissociates and discharges and transforms into plasma P. According to some embodiments, the plasma generating unit 15 also includes a bias component electrically coupled to the carrying platform 11, which can be used to attract the plasma P to the surface of the substrate W to improve the efficiency of the deposition process. Although not shown, one or more controllers may be electrically coupled to the radio frequency power source 15A and/or bias components to control its operation.

According to some embodiments, during the plasma cleaning process before or after the deposition process, the plasma generating unit 15 may also dissociate the cleaning gas supplied to the processing chamber 10 into a plasma state, and then use the plasma state The cleaning gas is used to chemically etch the processing chamber 10 to clean the processing chamber 10 (for example, to remove the thin film formed on the inner wall of the processing chamber 10 during the deposition process).

The exhaust unit 14 is configured to remove processing gas (ie, plasma P) and/or cleaning gas from the processing chamber 10 after the deposition process and/or the plasma cleaning process. In addition, after the substrate W is fed into the processing chamber 10, the exhaust unit 14 can also be used to evacuate the processing chamber 10 to reach the pressure conditions required by the subsequent process. In the embodiment of Figure 1, the exhaust unit 14 can be fluidly coupled to a gas outlet 10C (close to the position of the plasma P) on the housing 10A of the processing chamber 10, and the exhaust unit 14 includes a pump and a gas pipeline And gas controllers (such as valves, flow meters, detectors or other similar components).

It should be understood that, the plasma chemical vapor deposition apparatus is only used as an example of the chemical vapor deposition apparatus 1, but the disclosure is not limited thereto. In some embodiments, the processing chamber 10 of the chemical vapor deposition apparatus 1 can also perform a chemical vapor deposition process that does not use plasma, and only uses thermal excitation to cause the process gas to chemically react with the surface of the substrate W. A thin film is formed thereon.

Please refer to FIGS. 1 and 2 together. The lifting assembly 16 is configured to lift the substrate W under the driving of the driving mechanism 17 to unload the substrate W from the carrier platform 11 (ie, separate). According to some embodiments, after the deposition process, the electrostatic force of the substrate W held by the carrier platform 11 is released first, and then the substrate W can be lifted from the carrier platform 11 by the lifting assembly 16, and then through a substrate transport device (Not shown in the figure) transported and sent out of the chemical vapor deposition apparatus 1 through a gate (not shown in the figure) on the housing 10A of the processing chamber 10.

As shown in Figures 1 and 2, the lifting assembly 16 is disposed under the carrying platform 11 (that is, the opposite side of the supporting platform 11 on the side of the substrate W), and includes a plurality of components that extend toward and penetrate the carrying platform 11 It passes through lift pins 16B formed in an annular penetrating hole 11C (approximately centered on the shaft 11A of the carrying platform 11) in the carrying platform 11. The driving mechanism 17 is arranged below/outside the processing chamber 10, and includes a rod 17B that can vertically extend into or out of the processing chamber 10, wherein the rod 17B and the lifting assembly 16 can be coupled through a The members 18 (please refer to Fig. 3) are coupled to each other. The coupling member 18 is, for example, a screw made of aluminum or stainless steel. When the rod portion 17B of the driving mechanism 17 extends into the processing chamber 10, the lifting assembly 16 can be driven upward, and the substrate W is lifted by the lift pin 16B to unload the substrate W from the carrier platform 11. The above-mentioned lifting assembly 16, driving mechanism 17, coupling member 18, and a shielding member 19 which will be introduced in a later paragraph constitute a “lifting device” in the chemical vapor deposition apparatus 1.

According to some embodiments, the driving mechanism 17 includes a cylindrical driving portion 17A, which is disposed outside the processing chamber 10 and mechanically coupled to an opening (not shown) in the housing 10A of the processing chamber 10. In order to achieve airtightness, one or more seals (such as O-rings) may be arranged between the opening and the driving portion 17A.

According to some embodiments, the driving portion 17A has a lifting structure (not shown) that can drive the rod portion 17B into or out of the driving portion 17A (and can make the rod portion 17B extend into or out of the processing chamber 10). For example, a lift bellow can be raised and lowered by a telescopic method or a cylinder can be raised and lowered by a displacement method. The above-mentioned lifting structure is only an example, and this disclosure is not limited to this.

According to some embodiments, as shown in FIG. 3, a plurality of (for example, three, but not limited to) lifting thimbles 16B of the lifting assembly 16 are coupled to a substantially annular shape (corresponding to the shape of the substrate W ) The base frame 16A. Specifically, the lifting thimble 16B is disposed on the first end surface S1 of the base frame 16A facing the supporting platform 11. In some embodiments, the base frame 16A and the lifting thimble 16B can be made of a ceramic material (for example, alumina, zirconia, silicon carbide, or silicon nitride) in an integrated manner.

According to some embodiments, there is a protruding and tubular connecting portion 16C on a second end surface S2 of the base frame 16A opposite to the first end surface S1, wherein the coupling member 18 (only the screw 18 is used as an example below for convenience of description ) Can pass through the screw holes on the connecting portion 16C of the base frame 16A and the rod portion 17B of the driving mechanism 17 (in Figure 3, since the rod portion 17B is nested in the connecting portion 16C, only the connecting portion 16C and its The above screw hole H is shown) to couple the lifting assembly 16 and the driving mechanism 17.

Please go back to Figures 1 and 2. During the deposition process, the processing gas supplied by the gas supply unit 13 will fill the entire processing chamber 10, including diffusion to the bottom of the carrier platform 11 (such as the gas diffusion path G in Figure 1). As shown), the surface of the lifting assembly 16 and the exposed part of the screw 18 may react chemically with the processing gas to cause film deposition. Research has found that after the plasma cleaning processing chamber 10, the film formed on the lifting assembly 16 can be removed well, but the film formed on the screw 18 is not easy to remove. This is the same as the material of the screw 18. , Surface texture structure, etc. are related.

In this way, when the lifting assembly 16 unloads the substrate W from the carrying platform 11 and the exhaust unit 14 simultaneously draws out the processing gas from the processing chamber 10 (as shown in Figure 2), it deposits or accumulates on the screw 18 The thin film or particles may be pulled by the air flow F and be carried onto the substrate W, causing the substrate W to be contaminated or defective.

Please refer to Figures 3 and 4 together. Some embodiments of the present invention use a shielding member 19 to shield the screw 18 to prevent it from being exposed, thereby reducing the processing gas in the processing chamber 10 from contacting the screw 18 and depositing on the screw 18 Thin film or particles (that is, the opportunity for the screw 18 to be contaminated).

According to some embodiments, the shielding member 19 is a protective cover made of ceramic material (the same material as the lifting assembly 16), and is configured to shield a part of the screw 18 from being exposed to the processing gas (such as the head 18A). ). As shown in Figures 3 and 4, when the thread portion 18B of the screw 18 is locked into the screw hole H on the connecting portion 16C and the rod portion 17B to couple the lifting assembly 16 and the driving mechanism 17, the shielding member 19 can be completely covered The head 18A of the screw 18 prevents the screw 18 from being exposed from the outside. In this way, during the deposition process, the thin film is only formed on the shielding member 19 (protective cover) of ceramic material and smooth surface, and can be removed by plasma, thereby reducing the chance of contamination or defects of the substrate W.

According to some embodiments, the shielding member 19 covers the head 18A of the screw 18 in a detachable manner. As shown in Figures 5A and 5B, one or more first threads 18C can be formed on an outer peripheral surface of the head 18A of the screw 18 by, for example, a car pin method, and an inner peripheral surface of the shielding member 19 can also pass through, for example, The car pin method forms one or more second threads 19A corresponding to the first threads 18C, so as to achieve the combination and disassembly between the shielding member 19 and the screws 18, which is convenient for the user to operate. In some embodiments, the diameter R1 of the head 18A of the screw 18 is slightly smaller than the inner diameter R2 of the shielding member 19, for example, the diameter R1 of the head 18A is about 9 cm, and the inner diameter R2 of the shielding member 19 is about 9.6 cm. In addition, the thickness D1 of the head 18A is slightly smaller than the thickness D2 of the shielding member 19, for example, the thickness D1 of the head 18A is about 2.8 cm, and the thickness D2 of the shielding member 19 is about 3.6 cm.

As shown in Figures 5A and 5B, one or more surface features 19B (such as cut corners, but not limited to this) can also be formed on one of the outer peripheral surfaces of the shielding member 19 to facilitate the user to apply force to rotate the shielding member 19 . In some embodiments, two parallel cut corners 19B are formed on the outer circumferential surface of the shielding member 19, and the length L between the two cut corners 19B is about 8.1 cm.

In addition, the shielding member 19 can also have many changes. For example, in the embodiment of FIG. 6, the shielding member 19' is coupled to the connecting portion 16C of the lifting assembly 16 in a movable manner (for example, a pivotal manner), instead of being directly covered by the screw 18. Wherein, the shielding member 19' can be a protective cover (also made of ceramic material) that matches the tubular appearance of the connecting portion 16C (for example, the same arc), and one side 19C of the protective cover passes through the pivot (not shown) ) Is coupled to the connecting portion 16C, and a tenon structure 19E is formed on the other opposite side 19D, which can be engaged with or separated from a corresponding groove structure 16D on the connecting portion 16C.

With this configuration, when the tenon structure 19E is engaged with the groove structure 16D, the shielding member 19' can shield the head 18A of the screw 18 and its surrounding area to prevent the head 18A from being exposed to processing gas, thereby reducing pollution; When the tenon structure 19E is separated from the groove structure 16D, the head 18A of the screw 18 can be exposed to facilitate the user's operation (as shown in Fig. 6).

Figure 7 is a schematic diagram showing a shielding member 19" according to other embodiments. The shielding member 19" can be a heat-resistant tape, configured to adhere and cover the head 18A of the screw 18 exposed to the processing gas ( Or its periphery, for example, extends to the connecting portion 16C) to prevent the deposition of thin films or particles on the head 18A. The shape of the shielding member 19" can be square, rectangular, circular or other optional shapes.

According to some embodiments, the shielding member 19" is a heat-resistant tape made of materials such as polytetrafluoroethylene or polyimide, which has a heat-resistant temperature of at least 400°C (for example, high density (Use at the working temperature of the plasma chemical vapor deposition process). According to some embodiments, the material selected for the heat-resistant tape must also be able to avoid being dissociated by the plasma.

When the screw 18 or the heat-resistant tape is to be removed to reach its service life, only the shielding member 19" needs to be removed and replaced.

The embodiment of the present invention also provides a chemical vapor deposition method. Figure 8 shows a flow chart of a chemical vapor deposition method 80 according to some embodiments. In operation 81, a substrate is placed in a processing chamber. In operation 82, a processing gas is supplied to the processing chamber to perform a deposition process on the substrate, wherein the substrate is supported by a carrier platform. In operation 83, after the deposition process, a driving mechanism drives a lifting assembly to unload the substrate from the carrier platform, wherein the lifting assembly and the driving mechanism are coupled by a coupling member, and the coupling member is The shielding member shields and avoids exposure to processing gas. In operation 84, the processing gas in the processing chamber is removed.

The various operations of the chemical vapor deposition method 80 can refer to the above description of the chemical vapor deposition apparatus 1, which will not be repeated here.

It should be understood that additional operations may be provided before, during, and after the methods in the above-mentioned embodiments, and for the methods in different embodiments, some of the described operations may be replaced or eliminated. For example, in some embodiments, the chemical vapor deposition method 80 may also include an operation of converting the processing gas in the processing chamber into a plasma state to assist the deposition process.

In summary, the embodiment of the present disclosure has the following advantages: the exposed part of the coupling member 18 is shielded or covered by the shielding member 19/19'/19", so that the coupling member 18 will not interfere with processing during the deposition process. The gas undergoes a chemical reaction to form a thin film or particle deposition, which can prevent the thin film or particles from running on the substrate W and cause the substrate W to be polluted or produce defects, thereby improving the yield of the chemical vapor deposition process.

According to some embodiments, a lifting device is provided for lifting a substrate in a chemical vapor deposition device. The above-mentioned lifting device includes a driving mechanism, a lifting assembly, a coupling member and a shielding member. The lifting assembly is configured to lift the substrate driven by the driving mechanism. The coupling member is configured to couple the lifting assembly and the driving mechanism. The shielding member is configured to shield the coupling member and prevent the coupling member from being exposed to the processing gas in the chemical vapor deposition apparatus.

According to some embodiments, the coupling member is a screw, and the shielding member is a protective cover, and is configured to shield the head of the screw from being exposed to the processing gas.

According to some embodiments, the protective cover covers the head of the screw in a detachable manner.

According to some embodiments, a first thread is formed on an outer peripheral surface of the head of the screw, and a second thread is formed on an inner peripheral surface of the protective cover, corresponding to the first thread.

According to some embodiments, the protective cover is movably coupled to the lifting assembly and is configured to cover the head of the screw.

According to some embodiments, the shielding member is made of a ceramic material.

According to some embodiments, the coupling member is a screw, and the shielding member is a heat-resistant tape, and is configured to adhere and cover the head of the screw exposed to the process gas.

According to some embodiments, a chemical vapor deposition apparatus is provided, including a processing chamber, a carrying platform, a gas supply unit, an exhaust unit, a lifting assembly, a coupling member, and a shielding member. The carrying platform is configured to support a substrate in the processing chamber. The gas supply unit is configured to supply a processing gas to the processing chamber to form a thin film on the substrate. The exhaust unit is configured to remove processing gas from the processing chamber. The lifting assembly is configured to lift the substrate under the drive of a driving mechanism to unload the substrate from the carrier platform. The coupling member is configured to couple the lifting assembly and the driving mechanism. The shielding member is configured to cover a part of the coupling member exposed to the processing gas.

According to some embodiments, the lifting assembly is arranged on one side of the carrying platform, and includes a base frame and a plurality of lifting pins coupled to the base frame, and the driving mechanism is arranged outside the processing chamber and includes an extendable Or extend out one of the rods in the processing chamber, and the coupling member is configured to couple the base frame and the rod.

According to some embodiments, a chemical vapor deposition method is provided. The above method includes placing a substrate in a processing chamber. The above method also includes supplying a processing gas to the processing chamber to perform a deposition process on the substrate, wherein the substrate is supported by a carrier platform. The above method further includes after the deposition process, driving a lifting assembly by a driving mechanism to unload the substrate from the carrier platform, wherein the lifting assembly and the driving mechanism are coupled by a coupling member, and the coupling member is shielded The components are shielded to avoid exposure to processing gas. In addition, the above method includes removing the processing gas in the processing chamber.

Although the embodiments and their advantages have been described in detail above, it should be understood that various changes, substitutions and modifications can be made to the present disclosure without departing from the spirit and scope of the present disclosure as defined by the scope of the appended application. In addition, the scope of the present application is not intended to be limited to the specific embodiments of the manufacturing process, machinery, manufacturing, material composition, tools, methods, and steps described in the specification. As a person of ordinary skill in the art will easily understand from this disclosure, according to this disclosure, it is possible to use existing or future developments that perform substantially the same functions or implement substantially the same functions as the corresponding embodiments described in this disclosure. The result of the process, machine, manufacturing, material composition, tool, method or step. Therefore, the scope of the attached patent application intends to include these processes, machines, manufacturing, material composition, tools, methods or steps within their scope. In addition, each patent application scope constitutes a separate embodiment, and combinations of different patent application scopes and embodiments are within the scope of the present disclosure.

16‧‧‧Lifting components

16A‧‧‧Base frame

16B‧‧‧Lifting thimble

16C‧‧‧Connecting part

17‧‧‧Drive mechanism

17A‧‧‧Drive

18‧‧‧Coupling member/screw

18A‧‧‧Head

18B‧‧‧Thread part

19‧‧‧Shading member

19B‧‧‧Surface features

H‧‧‧Screw hole

S1‧‧‧First end

S2‧‧‧Second end face

Claims (6)

A lifting device for lifting a substrate in a chemical vapor deposition device, comprising: a driving mechanism; a lifting assembly configured to lift the substrate under the driving of the driving mechanism; and a coupling member, Disposed in a processing chamber of the chemical vapor deposition apparatus, wherein the coupling member is a screw, including a thread portion and a head connected to one end of the thread portion, and the thread portion is used for coupling The lifting assembly and the driving mechanism; and a shielding member configured to shield and prevent the head of the screw from being exposed to a processing gas supplied to the processing chamber, wherein the shielding member is a protective cover to The head of the screw can be detachably covered, wherein a first thread is formed on an outer peripheral surface of the head, and a second thread is formed on an inner peripheral surface of the protective cover, corresponding to the first thread. As for the lifting device described in item 1 of the scope of patent application, at least one surface feature is formed on an outer peripheral surface of the protective cover, so that the user can turn the protective cover to achieve the combination between the protective cover and the screw And disassembly. The lifting device according to any one of items 1 to 2 of the scope of patent application, wherein the shielding member is made of a ceramic material. A chemical vapor deposition device includes: a processing chamber; a carrying platform configured to support a substrate in the processing chamber; and a gas supply unit configured to supply a processing gas to the processing chamber To form a thin film on the substrate; an exhaust unit configured to remove the processing gas from the processing chamber; a lifting assembly configured to lift the substrate under the drive of a driving mechanism Unload the substrate from the carrying platform; a coupling member is disposed in the processing chamber, wherein the coupling member is a screw, including a thread portion and a head connected to one end of the thread portion, the screw The teeth are used to couple the lifting assembly and the driving mechanism; and a shielding member configured to detachably cover the head of the screw exposed to the processing gas, wherein the shielding member is a protective cover, wherein the A first thread is formed on an outer peripheral surface of the head, and a second thread is formed on an inner peripheral surface of the protective cover, corresponding to the first thread. According to the chemical vapor deposition apparatus described in item 4 of the scope of patent application, the lifting component is arranged on one side of the carrying platform, and includes a base frame and a plurality of lifting pins coupled to the base frame, the The driving mechanism is arranged outside the processing chamber, and includes a rod part that can extend into or out of the processing chamber, and the coupling member is configured to couple the base frame and the rod part. A chemical vapor deposition method includes: placing a substrate in a processing chamber; supplying a processing gas into the processing chamber to perform a deposition process on the substrate, wherein the substrate is supported by a carrier platform; After the deposition process, a lifting assembly is driven by a driving mechanism to unload the substrate from the carrying platform, wherein the lifting assembly and the driving mechanism are coupled by a coupling member and the coupling member is located in the processing chamber In the chamber, the coupling member is fastened with a screw, including a threaded portion and A head at one end of the tooth, the screw part is used to couple the lifting assembly and the driving mechanism, and the head is shielded by a shielding member to avoid exposure to the processing gas, wherein the shielding member is a A protective cover covers the head of the screw in a detachable manner, wherein a first thread is formed on an outer peripheral surface of the head, and a second thread is formed on an inner peripheral surface of the protective cover, corresponding to the First thread; and removing the processing gas in the processing chamber.

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