CN101399197B - Chamber lining - Google Patents
Chamber lining Download PDFInfo
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- CN101399197B CN101399197B CN2007101755333A CN200710175533A CN101399197B CN 101399197 B CN101399197 B CN 101399197B CN 2007101755333 A CN2007101755333 A CN 2007101755333A CN 200710175533 A CN200710175533 A CN 200710175533A CN 101399197 B CN101399197 B CN 101399197B
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- lining
- chamber
- process chamber
- sidewall
- semiconductor
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Abstract
The invention provides a chamber liner which is used for lining in a semiconductor chamber. The liner comprises a side wall, the shape and the size of which match with those of the inner wall of the semiconductor chamber, and the side wall of the liner is provided with a shield pore. The chamber liner provided by the invention is suitable for the side pulling semiconductor chamber, and film accumulation generated on the inner wall of the chamber can be reduced or even avoided, thus protecting the inner wall of the chamber effectively, reducing particle contamination and further improving the processing/treating quality of semiconductor devices, wafer, etc.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of lining that is used for the chamber of semiconductor machining/treatment process.
Background technology
As everyone knows, semiconductor fabrication comprises the deposition of metal, medium and other semi-conducting materials, the etching of above-mentioned material and the technologies such as removal of photo-resistive mask layer.Wherein, etching technics comprises grid etching, dielectric etch and metal etch etc., has extensively adopted plasma etching technology in these etching technics.
Above-mentioned semiconductor manufacturing and processing procedure need be carried out in semiconductor process chamber usually.Typical semiconductor process chamber comprises chamber, plasma generation and control device, process gas conveying device, is used for silicon chip fixing silicon chip chuck and technique component.Wherein, technique component is used to control and limit the existence zone of gas flow and plasma, and avoids etch product absorption to be deposited on being difficult for carrying out chamber inner wall that dismounting cleans etc.
Under low pressure, reacting gas is subjected to exciting of radio-frequency power, produces ionization and forms plasma, and plasma is made up of charged electronics and ion.Gas in the process chamber chamber except being transformed into ion, can also absorbing energy and forms a large amount of active reactive groups under the bump of electronics.Active reactive group produces chemical reaction and forms volatile reaction product with the material surface that is etched.Finally, this reaction product breaks away from the material surface that is etched, and is extracted out cavity by vacuum system.
The process gas that enters the process chamber chamber is excited and produces plasma, with the material on etched wafer surface.Yet, if above-mentioned process gas at process chamber chamber interior skewness, will cause the etch rate on the wafer surface of chamber interior that bigger variation is arranged, and influence etching homogeneity.Particularly, the size of wafer increases gradually at present, is increased to 300mm from 100mm, and correspondingly, the volume of process chamber chamber also constantly increases thereupon.So just, making provides uniform distribution of gas to become difficult more in the process chamber chamber.
Usually, etch rate and the uniformity one of the main reasons that great changes have taken place from the central authorities of wafer to its edge are exactly that process gas is at process chamber chamber interior skewness.And a large amount of production/research and development data show, in the semiconductor fabrication process process, realize that it is a key element realizing stable gaseous state plasma technology that the uniform and stable air-flow of silicon chip surface distributes.
In the semiconductor fabrication process process, in the process chamber chamber, implement processing/treatment process such as plasma etching after a period of time, because of etch product absorption deposit can be on the wall of process chamber film former.This film accumulation can cause one of following two aspect problems at least: the first, and this film can make wall peel off, and the particle of spall can penetrate in the process chamber, and then the result of influence processing/processing.And, along with the raising of integrated level and constantly reducing of dimensions of semiconductor devices, more and more be difficult to allow such particle to exist in the processing/treatment process.The second, this film can change the radio frequency grounding path, and therefore influences the quality of the processed devices such as wafer that obtained.As seen, the problem of this two aspect all will influence the processing of semiconductor device.
Given this, must take measures to avoid on the wall of process chamber, to generate above-mentioned film accumulation, perhaps in time remove this film accumulation.A kind of wet clean process mode is provided in the prior art, has just adopted physical method to clean the wall of process chamber, to remove the film accumulation on it.
Yet above-mentioned wet clean process mode is not first-selected in semi-conductive commercial the manufacturing.This is because this mode needs processed offline, and therefore reduces output.
For this reason, people attempt adopting additive method to avoid generating above-mentioned film accumulation again on the wall of process chamber.For example, people protect the wall of process chamber for the wall of process chamber is provided with liner with this.Like this, when depositing the film accumulation on this liner, can in the shortest downtime, replace and clean liner, thereby avoid long-time processed offline, guarantee that thus this process chamber carries out the production of continuous effective, and unlikely reduction output.
Fig. 1 just shows the liner that a kind of semiconductor process chamber adopted like this.This liner is that publication number is that CN1333917, denomination of invention are disclosed for the Chinese patent of " a kind of chamber lining that is used for the process chamber of semiconductor manufacturing and is used for semiconductor process chamber ".This liner comprises the plasma constraint screen 116c with a plurality of holes 128, and lateral wall 116b extends upward from plasma constraint screen 116c.Outward flange 116a stretches out from lateral wall 116b and makes outward flange 116a extend to outdoor and stretch into space under the atmospheric pressure.In addition, this liner also comprises the upwardly extending madial wall 116d from plasma constraint screen 116c.Plasma constraint screen 116c, interior and lateral wall (being respectively 116d and 116b) and outward flange 116a preferably are unified into an integral body mutually.
Although the described liner of above-mentioned Chinese patent can reduce even avoid film former accumulation on the inwall of process chamber, and then effectively protect the inwall of process chamber and reduce particle contamination, but there is following defective in it: one, the narrow limits of this inner lining structure protection, can't protect following adjustment support of quartz window and the following chamber of bleeding of barricade effectively, can't farthest avoid the generation of particle, thereby cause the pollution on the wafer; Its two, the uniformity in the flow field of flow field, especially silicon chip surface in the process chamber chamber that this inner lining structure provided also has certain limitation, thereby has limited the further raising of silicon chip surface flow field uniformity; Its three, what is more important, the liner of this structure only is applicable to down takes out the N-type semiconductor N process chamber under the type of taking out or the side, do not take out the N-type semiconductor N process chamber and be suitable for side.
Summary of the invention
For solving the problems of the technologies described above; the invention provides a kind of lining of chamber; it is applicable to that side takes out the N-type semiconductor N process chamber; and can reduce even avoid film former accumulation on the process chamber inwall; thereby protect the process chamber inwall effectively and reduce particle contamination, and then improve the processing/processing quality of semiconductor device such as wafer.
For this reason, the invention provides a kind of lining of chamber, be used for liner at semiconductor process chamber, described lining comprises sidewall, and the shape and size of the shape and size of this sidewall and semiconductor processes chamber interior walls are suitable.And the sidewall of described lining is provided with the shielding hole.Preferably, described shielding porous nickel distributes, and described shielding hole is strip.
Wherein, described strip shielding hole is horizontal bar and/or vertical bar and/or oblique stripe.
Wherein, pass the sheet mouth, be used for semiconductor device is delivered in the process chamber outside described process chamber, and/or described semiconductor device is delivered to outside the process chamber in described process chamber being provided with of described sidewall by the upper/lower positions place.
Wherein, described biography sheet mouth is arranged on the opposite side of described shielding hole.
Wherein, the sidewall of described lining is closed tubular, and it is around the whole inwall of described semiconductor process chamber; Perhaps the sidewall of described lining is non-closed form, and it is around the part inwall of described semiconductor process chamber.Preferably, the sidewall of described lining is closed tubular.
Wherein, the sidewall of described lining stretches out and forms the sidewall flange, and it is indoor by means of described sidewall flange described lining to be installed in described semiconductor processes.Perhaps, also the sidewall flange can be set, and it is indoor only by means of securing member described lining to be installed in described semiconductor processes.
Preferably, also be provided with observation panel on the sidewall of described lining.
With respect to prior art, the lining of chamber provided by the invention has the following effect of having a mind to:
One; the lining of chamber provided by the invention is lining in the semiconductor process chamber by interior; reduce even avoid film former accumulation on the inwall of process chamber, and then protect the inwall of process chamber effectively and reduce particle contamination, thereby improve the processing/processing quality of semiconductor device such as wafer.
Its two, the lining of chamber provided by the invention has and the suitable sidewall of the shape and size of semiconductor processes chamber interior walls, and this sidewall is provided with the shielding hole.Because the shielding hole is arranged on the sidewall wall of lining of chamber, rather than as prior art, be set in place on the constraint screen by the upper/lower positions place of process chamber liner.Like this, process gas that enters process chamber etc. is finished reaction in the process chamber chamber after, discharge the process chamber chamber via being arranged on the shielding hole on the sidewall.Therefore, the lining with this structure goes for the process chamber that side is taken out type.
They are three years old, because the lining of chamber provided by the invention does not have the constraint screen, the sidewall of this lining can make progress, extend downwards and extend around the inwall side face of process chamber chamber along the inwall of process chamber chamber, that is to say, the lining of chamber provided by the invention can cover the some or all of inwall of process chamber chamber, preferably covers whole inwalls.Therefore, the lining of chamber provided by the invention is bigger to the protection range of process chamber chamber inner wall, can farthest avoid producing particle, and then avoids semiconductor device such as wafer are produced pollution.
In addition, in a preferred embodiment of the invention, the shielding hole that is had on the sidewall of the lining of chamber is strip, this can increase the area that air communication is crossed, promptly improve shielding sieve porosity, thereby improve the flow field uniformity of semiconductor device surface such as silicon chip, and then improve the processing/processing quality of semiconductor device such as wafer.
Description of drawings
The structural representation of a kind of process chamber liner that Fig. 1 provides for prior art;
Fig. 2 is the structural representation of first embodiment of the invention middle chamber liner;
Fig. 3 is a cavity inner lining shown in Figure 2 generalized section along the A-A direction;
Fig. 4 is the structural representation of second embodiment of the invention middle chamber liner.
Embodiment
For making those skilled in the art person understand technical scheme of the present invention better, be described in detail below in conjunction with the lining of accompanying drawing to chamber provided by the invention.
Please consult Fig. 2 and Fig. 3 simultaneously, the lining 116 of the chamber that first embodiment of the invention provides comprises lateral wall 116b cylindraceous, from the outward extending outward flange 116a of the top edge of lateral wall 116b, be opened in the shield opening 116c that biography sheet mouth 126 on the lateral wall 116b and the position relative with passing sheet mouth 126 on lateral wall 116b are offered.
Wherein, pass sheet mouth 126 and advance/go out the inlet/outlet of this process chamber as semiconductor device such as wafers, its be arranged on the lateral wall 116b by the upper/lower positions place.
The shield opening 116c that is arranged on the lateral wall 116b is vertical strip, is used for after reaction the gas in the process chamber being discharged thus.Described shield opening 116c is arranged on the wall of lateral wall 116b of this cavity inner lining, rather than as prior art, is set in place on the constraint screen by the upper/lower positions place of process chamber liner.Therefore, the lining with such structure goes for the process chamber that side is taken out type.
It is to be noted, although the lateral wall of the lining that is provided in the present embodiment is cylindric for closure, in actual applications, it also can be set to shape adapting with it according to the shape of process chamber chamber, for example, be set to that end face is square, the tubular structure of rhombus.Certainly, the lateral wall of this lining also can not be closed, that is to say that the girth of this liner is shorter than the girth of process chamber chamber inner wall, thereby just partly is coated with liner, rather than all covered by liner on the inwall of this process chamber chamber.Like this, the inwall that is coated with the process chamber chamber of liner can be protected.
See also Fig. 4, the lining 116 of the chamber that second embodiment of the invention provided is similar with first embodiment shown in Figure 2, it comprises lateral wall 116b equally, from the outward extending outward flange 116a of the top edge of lateral wall 116b, be opened in the shield opening 116c that biography sheet mouth 126 on the lateral wall 116b and the position relative with passing sheet mouth 126 on lateral wall 116b are offered.
The difference of second embodiment and first embodiment is that the shape of the shield opening 116c among first embodiment is vertical strip, and the shape of the shield opening 116c among second embodiment is the strip of level.Shield opening 116c is strip, can increase the area that air communication is crossed, and promptly improves shielding sieve porosity, thereby improves uniformity.
Although it is pointed out that the shield opening 116c described in the previous embodiment is horizontal strip or vertical strip, in actual applications, it also can be for having the inclination strip of certain angle with respect to horizontal direction or vertical direction.Certainly, the shape of shield opening 116c also can need not be confined to strip, but can be shapes such as circular hole, square hole, diamond hole.
All have from the outward extending outward flange of lateral wall although further it is pointed out that the lining of the chamber described in the previous embodiment, and this lining can be installed and fixed in the process chamber by means of this flange.But in actual applications, this lining also can not have outward flange, but is installed in the process chamber, for example by other modes of installing and fixing, can on the inwall of the lateral wall of this lining and process chamber, offer installing hole, and this lining is installed in the process chamber by means of the securing member of correspondence.
In addition, the lining of chamber provided by the invention not only can be applied to the described plasma etching equipment of previous embodiment, and can be applied to semiconductor machining/treatment facility that other are fit to.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (9)
1. the lining of a chamber is used for liner at semiconductor process chamber, and described lining comprises sidewall, the shape and size of the shape and size of this sidewall and semiconductor processes chamber interior walls are suitable, it is characterized in that the sidewall of described lining is provided with the shielding hole, described shielding hole is strip.
2. the lining of chamber according to claim 1 is characterized in that, described strip shielding hole is horizontal bar and/or vertical bar and/or oblique stripe.
3. the lining of chamber according to claim 1 is characterized in that, described shielding porous nickel distributes.
4. the lining of chamber according to claim 1, it is characterized in that, pass the sheet mouth being provided with of described sidewall, be used for semiconductor device is delivered in the process chamber outside described process chamber, and/or described semiconductor device is delivered to outside the process chamber in described process chamber by the upper/lower positions place.
5. the lining of chamber according to claim 4 is characterized in that, described biography sheet mouth is arranged on the opposite side of described shielding hole.
6. the lining of chamber according to claim 1 is characterized in that, the sidewall of described lining is closed tubular, and it is around the whole inwall of described semiconductor process chamber; Perhaps the sidewall of described lining is non-closed form, and it is around the part inwall of described semiconductor process chamber.
7. the lining of chamber according to claim 1 is characterized in that, the sidewall of described lining stretches out and forms the sidewall flange, and it is indoor by means of described sidewall flange described lining to be installed in described semiconductor processes.
8. the lining of chamber according to claim 1 is characterized in that, it is indoor by means of securing member described lining to be installed in described semiconductor processes.
9. according to the lining of any described chamber in the claim 1 to 8, it is characterized in that the sidewall of described lining is provided with observation panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101755333A CN101399197B (en) | 2007-09-30 | 2007-09-30 | Chamber lining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101755333A CN101399197B (en) | 2007-09-30 | 2007-09-30 | Chamber lining |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101399197A CN101399197A (en) | 2009-04-01 |
| CN101399197B true CN101399197B (en) | 2011-12-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101755333A Active CN101399197B (en) | 2007-09-30 | 2007-09-30 | Chamber lining |
Country Status (1)
| Country | Link |
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| CN (1) | CN101399197B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102573429B (en) * | 2010-12-09 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Screening arrangement, processing method and equipment, semiconductor equipment |
| CN102865250B (en) * | 2012-09-27 | 2017-04-19 | 上海华虹宏力半导体制造有限公司 | Shielding cover of pump suction port for semiconductor fabrication |
| CN103346058A (en) * | 2013-06-08 | 2013-10-09 | 天通吉成机器技术有限公司 | Cavity lining of plasma etching equipment |
| CN103337444A (en) * | 2013-06-08 | 2013-10-02 | 天通吉成机器技术有限公司 | Reaction chamber of dry plasma etcher |
| CN104979238B (en) * | 2014-04-14 | 2017-12-15 | 沈阳芯源微电子设备有限公司 | A kind of anti-splash and anti-adhesive type process cavity of TRACK boards spin coating unit |
| CN109524324B (en) * | 2017-09-19 | 2021-01-26 | 长鑫存储技术有限公司 | Semiconductor etching equipment |
| CN109811406B (en) * | 2017-11-20 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Quartz piece, process chamber and semiconductor processing equipment |
| CN109273342A (en) * | 2018-11-02 | 2019-01-25 | 北京北方华创微电子装备有限公司 | Liner Components, reaction chamber and semiconductor processing equipment |
| KR102473872B1 (en) * | 2018-11-02 | 2022-12-06 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Lining assemblies, reaction chambers and semiconductor processing devices |
| CN208835019U (en) * | 2018-11-12 | 2019-05-07 | 江苏鲁汶仪器有限公司 | A kind of reaction chamber liner |
| CN113737155B (en) * | 2020-05-29 | 2023-04-18 | 江苏鲁汶仪器股份有限公司 | Cavity lining device for improving PECVD (plasma enhanced chemical vapor deposition) cleaning efficiency |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1681079A (en) * | 2004-02-26 | 2005-10-12 | 应用材料有限公司 | In-situ dry clean chamber for front end of line fabrication |
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2007
- 2007-09-30 CN CN2007101755333A patent/CN101399197B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1681079A (en) * | 2004-02-26 | 2005-10-12 | 应用材料有限公司 | In-situ dry clean chamber for front end of line fabrication |
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| Publication number | Publication date |
|---|---|
| CN101399197A (en) | 2009-04-01 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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