CN109811406B - Quartz piece, process chamber and semiconductor processing equipment - Google Patents
Quartz piece, process chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN109811406B CN109811406B CN201711156197.8A CN201711156197A CN109811406B CN 109811406 B CN109811406 B CN 109811406B CN 201711156197 A CN201711156197 A CN 201711156197A CN 109811406 B CN109811406 B CN 109811406B
- Authority
- CN
- China
- Prior art keywords
- process chamber
- bottom wall
- side wall
- sidewall
- quartz piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a quartz piece, a process chamber and a semiconductor processing device. The quartz piece comprises a bottom wall and a side wall formed by bending and extending the edge of the bottom wall, and at least one exhaust groove penetrating through the thickness of the bottom wall is formed in the edge area of the bottom wall, which is close to the side wall. According to the quartz piece, the bottom wall is provided with the plurality of exhaust grooves with the structures, so that all cleaning gas can finally flow downwards through the plurality of exhaust grooves, the reaction gas can parallelly flow through the surface of the wafer in a laminar flow mode, and an epitaxial layer with compact structure and good quality can be obtained on the wafer. Meanwhile, a series of byproducts generated in the process can be avoided, so that the process yield can be improved, and the manufacturing cost can be reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a quartz piece, a process chamber comprising the quartz piece and semiconductor processing equipment comprising the process chamber.
Background
Atmospheric pressure chemical vapor deposition refers to a method of chemical vapor deposition performed at atmospheric pressure. The process requires a simple system, high reaction speed, poor uniformity and poor step coverage, and is generally used for thick dielectric deposition. Currently, most of the required thin film materials, whether conductive, semiconductive or dielectric materials, can be prepared by chemical vapor deposition during the chip fabrication process.
Silicon epitaxial equipment is a common equipment for carrying out a process by utilizing a chemical vapor deposition principle, and the traditional silicon epitaxial equipment mainly comprises a pre-pumping chamber (Loadlock), a transmission chamber and a process chamber. Firstly, a user loads a wafer box with a silicon wafer into a pre-pumping cavity, then a mechanical arm takes out the silicon wafer from the pre-pumping cavity, and the silicon wafer is placed into a base of a process cavity through a transmission cavity so as to carry out epitaxial reaction on the wafer placed on the base. To facilitate temperature uniformity and gas flow field uniformity in the process chamber, it is desirable that the susceptor carrying the wafer be capable of rotating within the process chamber.
Fig. 1 and 2 are schematic structural views of a process chamber in a silicon epitaxial apparatus in the prior art. The process chamber includes a chamber body 210, a pedestal 220, a rotation assembly 230, and a quartz piece 100, wherein the rotation assembly 230 may rotate the pedestal 220. The chamber body 210 employs a horizontal gas inlet manner, and a certain amount of gas flow velocity, gas concentration, and rotational speed of the susceptor 220 are matched to achieve a better temperature uniformity and gas flow field uniformity on the surface of the susceptor 220. There is a certain gap between the susceptor 220 and the quartz member 100 to ensure that the susceptor 220 does not rub against the quartz member 100 during rotation.
In the first prior art, the rotation of the susceptor 220 can be realized, so that the temperature uniformity and the gas flow field uniformity of the process chamber can be ensured. However, the process gas may enter below the susceptor 220 and into the spin module 230 (as indicated by the arrows in FIG. 2) through a gap existing between the susceptor 220 and the quartz piece 100. As the epitaxial process proceeds, a series of byproducts are generated and attached to the assembly gaps on the surfaces of the components, such as the susceptor 220, the quartz component 100, the rotating assembly 230, etc., thereby affecting the normal operation of the components. On the other hand, epitaxial reactions are very sensitive to chamber particles, and the presence of byproducts affects the cleanliness of the epitaxial process chamber.
In order to eliminate the by-products in the process chamber, fig. 3 and 4 are schematic structural views of the process chamber in the silicon epitaxial apparatus of the second prior art. It is different from the prior art one: a purge gas source 310 is disposed below the process chamber and a purge gas channel 231 (gas channels indicated by arrows in fig. 4) is disposed in the spin assembly 230. The purge gas is formed with a pressure such that the reaction gas cannot pass through the gap between the susceptor 220 and the quartz member 100. The purge gas source 310 may be set to nitrogen, hydrogen, or an inert gas, depending on the type of epitaxial reactant gas.
However, when the process chamber employs a horizontal gas inlet manner, that is, the reaction gas enters the chamber of the chamber body 2 IN a horizontal direction (as shown IN fig. 3, the left end of the chamber body 210 is the gas inlet end IN, and the right end of the chamber body 210 is the gas outlet end OUT). Thus, when the purge gas horizontally passes through the rear surface of the susceptor 220 and comes into contact with the vertical sidewall of the quartz member 100, the flow direction of the purge gas becomes vertical, which causes turbulence due to the process gas being subjected to resistance in the vertical direction by the purge gas before entering the process chamber. The turbulence may cause the process gases not to be in a laminar flow state, which may affect the uniformity of the epitaxial layer and the product yield. In addition, the purge gas reduces the overall concentration of gaseous silicon sources in the process gas, which in turn affects the growth rate of the wafer surface.
Therefore, how to design a structure capable of effectively reducing the particle deposition in the process chamber is a technical problem to be solved in the art.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art and provides a quartz piece, a process chamber comprising the quartz piece and semiconductor processing equipment comprising the process chamber.
In order to achieve the above object, in a first aspect of the present invention, a quartz piece is provided, which includes a bottom wall and a side wall formed by bending and extending from an edge of the bottom wall, and an edge area of the bottom wall, which is close to the side wall, is provided with at least one air vent groove penetrating through a thickness of the bottom wall.
Preferably, the cross section of the bottom wall is circular, the bottom wall is provided with a plurality of the exhaust grooves, and the exhaust grooves are uniformly arranged along the circumferential direction of the bottom wall.
Preferably, the side walls include a first side wall and a second side wall connected to the first side wall, and the first side wall extends in a direction opposite to that of the second side wall.
Preferably, the second sidewall includes an enclosure and a vent, the vent including at least one groove extending through the thickness of the second sidewall.
Preferably, the groove is recessed from a bottom of the second sidewall toward a top of the second sidewall.
In a second aspect of the invention, a process chamber is provided comprising a pedestal and a rotating assembly rotatably coupled to each other, the rotating assembly being provided with a purge gas channel, and further comprising the quartz piece as described above, the quartz piece being disposed below the pedestal, the exhaust groove being in communication with the purge gas channel.
Preferably, the quartz piece comprises a first side wall and a second side wall, the first side wall is bent from the bottom wall edge towards the base, and the second side wall is bent from the bottom wall edge away from the base;
the process chamber is provided with an air inlet end and an air outlet end, the packaging part of the second side wall is located at the air inlet end, and the air outlet part of the second side wall is located at the air outlet end.
Preferably, the bottom wall is spaced opposite the base, and the side wall is spaced opposite a side surface of the base.
Preferably, the central region of the bottom wall is provided with a first mounting hole penetrating through the thickness of the bottom wall, and the chamber body of the process chamber comprises a second mounting hole;
the second mounting hole corresponds to the first mounting hole, and the rotating assembly sequentially penetrates through the second mounting hole and the first mounting hole to be rotatably connected with the base.
In a third aspect of the invention, a semiconductor processing apparatus is provided, comprising the process chamber described above.
According to the quartz piece, the bottom wall is provided with the plurality of exhaust grooves with the structures, so that all cleaning gas can finally flow downwards through the plurality of exhaust grooves, the reaction gas can parallelly flow through the surface of the wafer in a laminar flow mode, and an epitaxial layer with compact structure and good quality can be obtained on the wafer. In addition, a series of byproducts generated in the process can be avoided, so that the process yield can be improved, and the manufacturing cost can be reduced.
The process chamber provided by the invention has the structure of the quartz piece, and when the process chamber needs to be cleaned, cleaning gas can be provided for the process chamber, and can enter a gap between the quartz piece and the base to clean the process chamber. The cleaned gas is finally exhausted downwards through the exhaust groove arranged on the quartz piece. Therefore, the cleaning gas can not influence the reaction gas in the process chamber, so that the reaction gas can parallelly flow through the surface of the wafer in a laminar flow mode, and an epitaxial layer with compact tissue and good quality can be obtained on the wafer. In addition, a series of byproducts can be avoided, the process yield is improved, and the manufacturing cost is reduced.
The semiconductor processing equipment of the present invention has the structure of the process chamber with the above structure, and the process chamber further includes the structure of the quartz piece, so that when the semiconductor processing equipment needs to be cleaned, the cleaning gas source can be turned on to provide cleaning gas into the cleaning gas channel, and the cleaning gas can enter the gap between the quartz piece and the pedestal to clean the semiconductor processing equipment. The cleaned gas is finally exhausted downwards through the exhaust groove arranged on the quartz piece. Therefore, the cleaning gas does not influence the reaction gas of the semiconductor processing equipment, so that the reaction gas can parallelly flow through the surface of the wafer in a laminar flow mode, and an epitaxial layer with compact tissue and good quality can be obtained on the wafer.
In addition, a series of byproducts can be avoided, the process yield is improved, and the manufacturing cost is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a process chamber in a silicon epitaxial apparatus according to the prior art;
FIG. 2 is an enlarged view of a portion of FIG. 1 at A;
FIG. 3 is a schematic diagram of a process chamber in a silicon epitaxial apparatus according to the second prior art;
FIG. 4 is an enlarged view of a portion shown at B in FIG. 3;
FIG. 5 is a schematic view of a process chamber according to the present invention;
FIG. 6 is a schematic structural view of a quartz member according to the present invention;
FIG. 7 is a cross-sectional view of the quartz piece shown in FIG. 6;
fig. 8 is a bottom view of the quartz member shown in fig. 6.
Description of the reference numerals
100: a quartz piece;
110: a bottom wall;
111: an exhaust groove;
112: a first mounting hole;
120: a side wall;
121: a first side wall;
122: a second side wall;
122 a: a packaging section;
122 b: an exhaust section;
122 c: a groove;
210: a chamber body;
211: a second mounting hole;
220: a base;
230: a rotating assembly;
231: cleaning the gas channel;
300: a semiconductor processing apparatus;
310: a purge gas source.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As shown in fig. 6, 7 and 8, a first aspect of the invention relates to a quartz piece 100. The quartz component 100 includes a bottom wall 110 and a sidewall 120 formed by bending and extending from the edge of the bottom wall 110. The edge area of the bottom wall 110 near the side wall 120 is provided with at least one air discharge groove 111 penetrating the thickness of the bottom wall 110.
For convenience of description, the quartz member 100 of the structure is applied to a process chamber as an example, and of course, the quartz member 100 may be applied to other structures. The specific structure of the process chamber will not be described in detail first.
Specifically, as shown in fig. 5, the quartz member 100 may be placed under the susceptor 220 with a gap from the susceptor 220. When the susceptor 220 needs to be purged, a purge gas may be supplied to the process chamber, and the purge gas may enter into the gap between the quartz piece 100 and the susceptor 220 to clean the quartz piece 100, the gap between the quartz piece 100 and the susceptor 220, and the susceptor 220. The cleaned purge gas is finally discharged downward through the exhaust groove 111 provided in the quartz member 100. Therefore, the cleaning gas can not influence the reaction gas in the process chamber, especially when the process chamber adopts a horizontal gas inlet mode (the reaction gas enters the process chamber horizontally), because the cleaning gas can not influence the reaction gas, the reaction gas can parallelly flow through the surface of the wafer in a laminar flow mode, namely, the reaction gas can not be mixed and seeped between two layers and does not have longitudinal movement in the flowing process, and an epitaxial layer with compact structure and good quality can be obtained on the wafer. In addition, the cleaning gas is used for cleaning the structure in the process chamber, and a series of byproducts can be avoided, so that the process yield can be improved, and the manufacturing cost can be reduced.
It should be noted that the specific structure of the exhaust grooves 111 is not limited, and any exhaust structure may be adopted as long as it penetrates through the thickness of the bottom wall 110 of the quartz piece 100, for example, the exhaust grooves 111 may have a square shape, a circle center, or other irregular shapes.
It should be further noted that, the specific number of the exhaust grooves 111 disposed on the bottom wall 110 is not limited, and those skilled in the art can determine the actual number of the exhaust grooves 111 according to comprehensive considerations, such as the design strength of the quartz piece 100 and the amount of exhaust gas.
Preferably, as shown in fig. 6, the cross section of the bottom wall 110 is circular, a plurality of exhaust grooves 111 are formed in the bottom wall 110, and the plurality of exhaust grooves 111 are uniformly arranged along the circumferential direction of the bottom wall 110.
In the quartz piece 100 having the structure of the present embodiment, the plurality of exhaust grooves 111 having the above-described structure are formed in the bottom wall 110, so that all the purge gas can finally flow downward through the plurality of exhaust grooves 111, and the reaction gas can flow parallel on the surface of the wafer in a laminar flow, thereby obtaining an epitaxial layer having a dense structure and good quality on the wafer. In addition, a series of byproducts generated in the process can be avoided, so that the process yield can be improved, and the manufacturing cost can be reduced.
Preferably, as shown in fig. 8, the side wall 120 includes a first side wall 121 and a second side wall 122 connected to the first side wall 121, and the extending direction of the first side wall 121 is opposite to the extending direction of the second side wall 122, that is, as shown in fig. 8, the extending direction of the first side wall 121 may be upward, and correspondingly, the extending direction of the second side wall 122 is downward. Of course, the extending direction of the first sidewall 121 may be downward, and correspondingly, the extending direction of the second sidewall 122 may be upward.
Also, taking the example of applying the quartz piece 100 with this structure to a process chamber as an example, the sidewall 120 of the quartz piece 100 includes the first sidewall 121 and the second sidewall 122 extending in opposite directions, so when the inside of the process chamber is cleaned by the purge gas, as shown in fig. 5, the flow direction of the purge gas can be changed from the existing L shape to the U shape, and therefore, the purge gas can be further smoothly discharged outside the process chamber, the influence of the purge gas on the reaction gas can be further avoided, the reaction gas can be made to flow in parallel on the surface of the wafer in a laminar flow manner, and finally, an epitaxial layer with dense tissue and good quality can be obtained on the wafer.
Preferably, as shown in fig. 8, the second sidewall 122 includes an encapsulation portion 122a and a vent portion 122 b. Wherein the venting portion 122b includes at least one groove 122c extending through the thickness of the second sidewall 122.
Also, taking the example of applying the quartz member 100 of this structure to a process chamber, IN the application, the encapsulation portion 122a of the second sidewall 122 is located at the gas inlet IN (i.e., the left end IN fig. 5), and the gas outlet portion 122b is located at the gas outlet OUT (i.e., the right end IN fig. 5). Thus, since the second sidewall 122 is completely closed IN the direction of the inlet end IN of the process chamber, the influence of the purge gas on the inlet end IN of the reactant gas can be further effectively avoided, so that the reactant gas can further flow through the surface of the wafer IN parallel IN a laminar flow, and an epitaxial layer with a dense structure and good quality can be obtained on the wafer. Meanwhile, the second sidewall 122 is provided with an exhaust portion 122b in the direction of the gas outlet end OUT of the process chamber, and the exhaust portion 122b is provided with a groove 122c, so that the purge gas can be further smoothly discharged outside the process chamber.
Of course, in order to make the air discharging effect better, as shown in fig. 8, the air discharging part 122b may include a plurality of grooves 122c disposed at intervals.
In addition, the positional relationship between the groove 122c and the second side wall 122 is not limited, and for example, the groove 122c may be located at a middle position or other positions of the second side wall 122 in the height direction. In order to make the air discharging effect better, the groove 122c may be recessed from the bottom of the second sidewall 122 to the top of the second sidewall 122, as shown in fig. 8, so that a plurality of grooves 122c arranged at intervals are equivalent to forming a saw-tooth structure.
The quartz member 100 of the present embodiment is a specific structure of the exhaust portion 122b, and the plurality of grooves 122c like saw-teeth can further smoothly exhaust the purge gas to the outside of the process chamber.
A second aspect of the present invention, as illustrated in FIG. 5, relates to a process chamber. The process chamber includes a chamber body 210, a rotatably connected susceptor 220, and a rotation assembly 230, that is, the rotation assembly 230 can drive the susceptor 220 to rotate, so that wafers (not shown) located at different positions of the susceptor 220 have good process performance, and the uniformity of the wafers is improved. The rotation member 230 is provided with a purge gas passage 231. The process chamber further comprises the quartz piece 100 described above, the quartz piece 100 is disposed below the susceptor 220 with a gap therebetween, and the exhaust slot 111 is in communication with the purge gas channel 231.
The process chamber of this embodiment has the structure of the quartz piece 100 described above, and when the process chamber needs to be purged, a purge gas may be supplied to the process chamber, and the purge gas may enter the gap between the quartz piece 100 and the susceptor 220 through the purge gas channel 231 provided in the spin module 230 to purge the process chamber. The cleaning gas after the cleaning is finally discharged downward through the exhaust groove 111 provided in the quartz member 100. Therefore, the cleaning gas can not influence the reaction gas in the process chamber, so that the reaction gas can parallelly flow through the surface of the wafer in a laminar flow mode, and an epitaxial layer with compact tissue and good quality can be obtained on the wafer. In addition, a series of byproducts can be avoided, the process yield is improved, and the manufacturing cost is reduced.
Preferably, as shown in fig. 5 and 8, the first sidewall 121 of the quartz member 100 is bent from the edge of the bottom wall 110 toward the base 220, and the second sidewall 122 is bent from the edge of the bottom wall 110 away from the base 220. The process chamber has an inlet end IN (left side IN fig. 5) and an outlet end OUT (right side IN fig. 5), the encapsulation portion 122a of the second sidewall 122 is located at the inlet end IN, and the exhaust portion 122b of the second sidewall 122 is located at the outlet end OUT.
Thus, since the second sidewall 122 is completely closed IN the direction of the gas inlet IN of the chamber body 210, the influence of the purge gas on the reaction gas at the gas inlet IN can be further effectively avoided, so that the reaction gas can further flow through the surface of the wafer IN parallel IN a laminar flow manner, and an epitaxial layer with a dense structure and good quality can be obtained on the wafer. Meanwhile, the second sidewall 122 is provided with an exhaust portion 122b in the direction of the gas outlet end OUT of the chamber body 210, and the exhaust portion 122b is provided with a groove 122c, so that the purge gas can be further smoothly exhausted OUT of the process chamber.
Preferably, as shown in FIG. 5, the bottom wall 110 of the quartz member 100 is spaced opposite the susceptor 220, and the side wall 120 is spaced opposite the side surface of the susceptor 220. That is, there is a gap between the quartz component 100 and the susceptor 220, and the gap prevents the susceptor 220 from rubbing against the quartz component 100 when the susceptor 220 is rotated by the rotation assembly 230, thereby preventing process impurities from occurring or preventing the temperature of the susceptor 220 from being sharply increased due to friction. In addition, the gap between the susceptor 220 and the quartz member 100 also serves to communicate the exhaust groove 111 with the purge gas channel 231.
Preferably, as shown in fig. 5 and 6, the central region of the bottom wall 110 is provided with a first mounting hole 112 penetrating the thickness of the bottom wall 110, and the chamber body 210 includes a second mounting hole 211. The second mounting hole 211 corresponds to the first mounting hole 112, and the rotating assembly 230 sequentially passes through the second mounting hole 211 and the first mounting hole 112 to be rotatably connected to the base 220.
A third aspect of the invention, as illustrated in fig. 5, provides a semiconductor processing apparatus 300. The semiconductor processing apparatus 300 includes a process chamber including the process chambers described above and a purge gas source 310 in communication with the purge gas channel 231 in the spin assembly 230 to provide a purge gas to the purge gas channel 231.
The semiconductor processing apparatus of this embodiment has the structure of the process chamber described above, which includes the structure of the quartz piece 100 described above, so that when the semiconductor processing apparatus 300 needs to be cleaned, the purge gas source 310 can be turned on to provide a purge gas into the purge gas channel 231, and the purge gas enters the gap between the quartz piece 100 and the susceptor 220 to clean the semiconductor processing apparatus 300. The cleaning gas after the cleaning is finally discharged downward through the exhaust groove 111 provided in the quartz member 100. Thus, the cleaning gas does not affect the reaction gas of the semiconductor processing apparatus 300, so that the reaction gas can flow through the surface of the wafer in parallel in a laminar flow manner, and an epitaxial layer with dense tissue and good quality can be obtained on the wafer. In addition, a series of byproducts can be avoided, the process yield is improved, and the manufacturing cost is reduced.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A process chamber comprising a rotatably connected pedestal and a rotating assembly, the rotating assembly being provided with a purge gas channel, characterized in that,
the quartz piece is arranged below the base; wherein the content of the first and second substances,
the quartz piece comprises a bottom wall and a side wall formed by bending and extending from the edge of the bottom wall, and at least one exhaust groove penetrating through the thickness of the bottom wall is formed in the edge area, close to the side wall, of the bottom wall;
the exhaust groove is communicated with the sweeping gas channel; and the number of the first and second electrodes,
the cleaning gas enters the quartz piece and the gap between the bases, so that the quartz piece, the gap between the quartz piece and the bases are cleaned, and the cleaning gas is finally discharged downwards through the exhaust groove after the cleaning is finished.
2. The process chamber of claim 1, wherein the bottom wall has a circular cross section, and a plurality of the exhaust grooves are disposed on the bottom wall and are uniformly arranged along a circumferential direction of the bottom wall.
3. The process chamber of claim 1, wherein the sidewalls comprise a first sidewall and a second sidewall connected to the first sidewall, the first sidewall extending in a direction opposite to a direction in which the second sidewall extends.
4. The process chamber of claim 3, wherein the second sidewall comprises an encapsulation and a vent, the vent comprising at least one groove extending through a thickness of the second sidewall.
5. The process chamber of claim 4, wherein the recess is recessed from a bottom of the second sidewall toward a top of the second sidewall.
6. The process chamber of claim 1,
the quartz piece comprises a first side wall and a second side wall, the first side wall is bent from the edge of the bottom wall towards the base, and the second side wall is bent from the edge of the bottom wall away from the base;
the process chamber is provided with an air inlet end and an air outlet end, the packaging part of the second side wall is located at the air inlet end, and the air outlet part of the second side wall is located at the air outlet end.
7. The process chamber of claim 6,
the bottom wall and the base are arranged at intervals oppositely, and the side wall and the side surface of the base are arranged at intervals oppositely.
8. The process chamber of claim 7,
a first mounting hole penetrating through the thickness of the bottom wall is formed in the central area of the bottom wall, and a chamber body of the process chamber comprises a second mounting hole;
the second mounting hole corresponds to the first mounting hole, and the rotating assembly sequentially penetrates through the second mounting hole and the first mounting hole to be rotatably connected with the base.
9. A semiconductor processing apparatus comprising the process chamber of any of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711156197.8A CN109811406B (en) | 2017-11-20 | 2017-11-20 | Quartz piece, process chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711156197.8A CN109811406B (en) | 2017-11-20 | 2017-11-20 | Quartz piece, process chamber and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109811406A CN109811406A (en) | 2019-05-28 |
| CN109811406B true CN109811406B (en) | 2021-09-17 |
Family
ID=66598494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711156197.8A Active CN109811406B (en) | 2017-11-20 | 2017-11-20 | Quartz piece, process chamber and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109811406B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112593208B (en) * | 2020-11-25 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN112687513B (en) * | 2020-12-25 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Semiconductor processing chamber |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10237657A (en) * | 1997-02-26 | 1998-09-08 | Furontetsuku:Kk | Plasma treating device |
| US6153260A (en) * | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
| US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
| JP4217095B2 (en) * | 2003-03-31 | 2009-01-28 | 島田理化工業株式会社 | Substrate cleaning processing equipment |
| WO2005059974A1 (en) * | 2003-12-15 | 2005-06-30 | Applied Materials, Inc. | Edge flow faceplate for improvement of cvd film properties |
| CN101399197B (en) * | 2007-09-30 | 2011-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
| CN103915306B (en) * | 2012-12-31 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Microelectronic technique treatment facility and for its reaction chamber |
| JP5602903B2 (en) * | 2013-03-14 | 2014-10-08 | アプライド マテリアルズ インコーポレイテッド | Epitaxial film formation method and epitaxial growth apparatus |
| US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| CN105336640B (en) * | 2014-06-17 | 2018-12-11 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and consersion unit |
-
2017
- 2017-11-20 CN CN201711156197.8A patent/CN109811406B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109811406A (en) | 2019-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5857896B2 (en) | Method of operating film forming apparatus and film forming apparatus | |
| US9932674B2 (en) | Film deposition apparatus, film deposition method, and computer-readable recording medium | |
| KR101691255B1 (en) | Film deposition apparatus | |
| KR101536805B1 (en) | Film forming apparatus, film forming method and recording medium | |
| US20060216950A1 (en) | Film-forming apparatus and film-forming method | |
| US8967082B2 (en) | Plasma processing apparatus and gas supply device for plasma processing apparatus | |
| JP4418027B2 (en) | Vacuum processing equipment | |
| KR100949914B1 (en) | Atomic layer deposition apparatus | |
| US20070087296A1 (en) | Gas supply device and apparatus for processing a substrate | |
| US20150007774A1 (en) | Film formation device | |
| US8927440B2 (en) | Film deposition apparatus and method of depositing film | |
| KR101658277B1 (en) | Film deposition apparatus | |
| JP2010114471A (en) | Method and apparatus for reducing arcing during plasma processing | |
| JP2008516428A (en) | Atomic layer deposition apparatus having a plurality of zones and atomic layer deposition method using a plurality of zones | |
| KR20230100751A (en) | Single wafer processing environments with spatial separation | |
| KR20130085990A (en) | Method for reducing particles and method for film forming | |
| CN109811406B (en) | Quartz piece, process chamber and semiconductor processing equipment | |
| KR101928969B1 (en) | Film forming apparatus | |
| TW202006179A (en) | Gas distribution assembly for improved pump-purge and precursor delivery | |
| US20210087681A1 (en) | Dithering Or Dynamic Offsets For Improved Uniformity | |
| JP4645616B2 (en) | Deposition equipment | |
| JP7266346B1 (en) | Film forming apparatus, film forming method and gas nozzle | |
| KR102210390B1 (en) | Integration of dual remote plasmas sources for flowable cvd | |
| KR101028410B1 (en) | Susceptor and atomic layer deposition apparatus having the same | |
| KR20190119152A (en) | Diffuser Design for Flowable CVD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |