CN103337444A - Reaction chamber of dry plasma etcher - Google Patents
Reaction chamber of dry plasma etcher Download PDFInfo
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- CN103337444A CN103337444A CN2013102311301A CN201310231130A CN103337444A CN 103337444 A CN103337444 A CN 103337444A CN 2013102311301 A CN2013102311301 A CN 2013102311301A CN 201310231130 A CN201310231130 A CN 201310231130A CN 103337444 A CN103337444 A CN 103337444A
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- reaction chamber
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- dry plasma
- plasma etching
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Abstract
A reaction chamber of a dry plasma etcher comprises a cylindrical reaction chamber and an upper cover covering the cylindrical reaction chamber, wherein an air inlet hole is formed in the center of the upper cover, the cylindrical reaction chamber is formed by a side wall, a bottom wall and the upper cover, a substrate to be etched is placed in the center of the bottom wall of the reaction chamber, and a substrate picking and delivering port for picking up and delivering the substrate is formed in the reaction chamber; a uniform-flow inner lining matched with the reaction chamber is arranged in the reaction chamber and comprises a cylindrical main body, a transmission hole corresponding to the substrate picking and delivering port is formed in the main body, a circle of ring-shaped baseplate extending inwards is arranged at the bottom of the main body and corresponds to the substrate to be etched in position, and uniform-flow slotted holes are uniformly distributed in the ring-shaped baseplate; a mounting flange connected with the reaction chamber is arranged at the top of the main body and a sealing groove is formed between the mounting flange and the reaction chamber. The reaction chamber has the advantages of clean cavity, little pollution, good atmosphere and uniformity in the chamber and long service life.
Description
Technical field
The present invention relates to the plasma etching technology field, particularly a kind of reaction chamber of dry plasma etching machine.
Background technology
Etching is an important procedure in semiconductor, microelectronics and the LED manufacture process, and etching is to utilize chemistry or physical method selectively from the process of silicon chip or the unwanted material of Sapphire Substrate surface removal.Along with the integrated level raising of semiconductor device, the live width of semiconductor device is more and more littler, and the control of critical size is also more and more important, and is also more and more higher to the requirement of etching technics.Distinguish from technology, etching can be divided into wet etching and dry etching.Dry etching is plasma etching, feeds etching gas usually in plasma processing apparatus, and the ionization etching gas becomes plasma, utilizes described plasma that wafer to be etched is carried out etching.Existing method for etching plasma forms the photoresist figure usually on surface to be etched, be that mask is treated etch layer and carried out etching with this photoresist figure.Dry etching is selected than high because anisotropic is good, and controllability is good, the flexibility height, and it is good to repeat shape, easily realizes automation, and the advantage that cleanliness factor is high becomes one of current the most frequently used etching technics.
In the dry plasma equipment, reaction cavity is be used to the core component that carries out plasma etching.The even distribution of process gas is to guarantee the equally distributed key factor of plasma in the chamber, and the even distribution of plasma then is the key that influences etching homogeneity.
As shown in Figure 1, the structure of existing plasma etching apparatus comprises cylindric reaction cavity A3 and the quartz cover A4 that covers on reaction cavity A3, the middle position of quartz cover A4 is provided with air admission hole, and the sidewall A1 of reaction cavity A3, diapire A2 and quartz cover A4 have formed reaction cavity.Substrate A6 to be etched is placed on the middle position of diapire A2 in the reaction cavity.In this plasma etching apparatus, quartz cover A4 is circular tabular, there is an air admission hole A5. in the central authorities of quartz cover A4 according to the characteristic of fluid in the prior art, when etching gas enters reaction cavity by the air admission hole A5 of quartz cover A4 central authorities, gas is tending towards directly impacting diapire A2 centre position, is not easy to spread towards periphery, so just caused the gas density in centre position bigger, and the closer to sidewall A1 position, gas density is more little.
In addition, this plasma etching equipment is in etching process, can produce a lot of etching deposits inevitably and assemble and be attached on the chamber inner wall, cause pollution and the damage of chamber, and be difficult to remove the unsteadiness that causes etching environment in the reaction cavity and the loss of having accelerated equipment.
Summary of the invention
Have chamber contamination and damage in order to overcome existing plasma etching equipment, the atmosphere evenness of reaction cavity is poor, the shortcoming that useful life is short, it is pure to the invention provides a kind of chamber, pollute little, the reaction cavity of the dry plasma etching machine of long service life.
A kind of reaction chamber of dry plasma etching machine, comprise cylindric reaction chamber and the loam cake that covers on reaction chamber, the middle position of loam cake is provided with air admission hole, the sidewall of reaction chamber, diapire and loam cake have formed reaction chamber, substrate to be etched is placed on the middle position of reaction chamber diapire, reaction chamber be provided with fetch and deliver substrate fetch and deliver the sheet mouth;
It is characterized in that: be provided with it adaptive uniform flow liner in the reaction chamber, the uniform flow liner comprises body cylindraceous, body is provided with the transfer port corresponding with fetching and delivering the sheet mouth, the body bottom is provided with the annular bottom plate that a circle extends internally, the location matches of annular bottom plate and substrate to be etched is distributed with the uniform flow slotted eye equably on the annular bottom plate; The top of body is provided with the mounting flange that is connected with reaction chamber, is provided with seal groove between mounting flange and the reaction chamber.
Further, even flowing chute is formed by being the slotted eye that concentric circles arranges, and equally spaced is distributed with a plurality of slotted eyes on the same circumference.Slotted eye is circular arc, and the width of slotted eye is about 1.5mm.The central angle of arc-shaped slot is less than or equal to 20 °.
Further, reaction chamber one side is provided with pumping chamber, and pumping chamber is connected with the assisted vacuum flowmeter with vacuum pumping pump respectively, and the gas of reaction chamber enters pumping chamber through even flowing chute.Reaction chamber has lower side panel, and epipleural and wallboard surround, and lower side panel and epipleural are fixedly connected on the sidewall of reaction chamber, between epipleural and the sidewall, between lower side panel and the sidewall, and is between wallboard and epipleural and the lower side panel and is sealed and matched.Vacuum pumping pump comprises molecular pump and mechanical pump, and the interface of mechanical pump is positioned on the wallboard, and the interface of molecular pump is positioned on the lower side panel.Epipleural is provided with second observation window that can observe situation in the pumping chamber.
Further, loam cake comprises the chamber lid in capping chamber and the quartz disk that is sealed and matched with the chamber lid, and air admission hole is arranged at quartz disk central authorities, and quartz disk is provided with radio-frequency power supply top electrode interface; The diapire of reaction chamber is provided with substrate holding apparatus, and substrate holding apparatus is provided with radio-frequency power supply bottom electrode interface.Reaction chamber connects main vacuum flowmeter, and the sidewall of reaction chamber is provided with main vacuum flowmeter interface.
Further, reaction chamber be provided with can the observing response chamber in first observation window of situation, the uniform flow liner is provided with the observation panel corresponding with first observation window.First observation window and substrate are contour.The quantity of first observation window is two, is arranged at the relative both sides of reaction chamber respectively.
The course of work of the present invention is as follows:
At first, fetching and delivering outlet for lantern slide by gate valve coupled reaction chamber and manipulator chamber; Then, connect mechanical pump at the mechanical pump interface, connect molecular pump at the molecular pump interface by valve; Vacuum flowmeter and assisted vacuum flowmeter are connected on the corresponding interface; Check the sealing situation of first observation window, second observation window, chamber lid, quartz disk and substrate holding apparatus and reaction chamber then; If the sealing situation is normally then opened mechanical pump to the reaction chamber extracting vacuum; After the actual measured value of main vacuum flowmeter reaches first predetermined vacuum level, substrate to be etched is sent on the substrate holding apparatus by fetching and delivering the sheet mouth; Close the gate valve of fetching and delivering the sheet mouth; Open molecular pump reaction chamber is extracted high vacuum; After reaching second predetermined vacuum level in the reaction chamber, process gas enters reaction chamber from central air inlet position; Open radio-frequency power supply again, carry out etching technics; After etching technics is finished, close radio-frequency power supply, feed nitrogen from central air admission hole and purge and clean; At last, the substrate finished of etching is by robot arm depicted as it retrieves; Valve-off, molecular pump, mechanical pump.
Beneficial effect of the present invention is:
1, reaction chamber of the present invention and pumping chamber are integral structure, with respect to existing reaction chamber and pumping chamber separate type, reduced the quantity of mechanical seal connector, integrally-built high conformity, high vacuum seal and hold facility in reaction chamber and the pumping chamber are strong, can improve plasma etching speed.
2, the uniform flow liner is installed in the reaction chamber, can effectively prevents from or reduce to prolong the useful life of chamber on the inwall that the etching deposit gathered or be attached to reaction chamber.Liner is installed in the reaction chamber by mounting flange, so liner replacing, easy for installation, only needs regularly replacing or cleaning liner can keep the pure property of etching environment.
3, interior underboarding is provided with the uniform flow slotted eye, and when vacuumizing, the gas of reaction chamber enters in the evacuated chamber through the uniform flow slotted eye, the quantity of uniform flow slotted eye is many, compares general circle hole shape liner commonly used, and the area that air-flow passes through is big, the extraction ability of high vacuum is strong, has improved the uniformity of sheet dish ambient gas.
Description of drawings
Fig. 1 is the schematic diagram of prior art.
Fig. 2 is stereogram of the present invention.
Fig. 3 is cutaway view of the present invention.
Fig. 4 is the stereogram behind the removal loam cake.
Fig. 5 is the schematic diagram of uniform flow liner.
Embodiment
Shown in Fig. 2,3, a kind of reaction chamber of dry plasma etching machine, comprise cylindric reaction chamber 1 and the loam cake that covers on reaction chamber 1, the middle position of loam cake is provided with air admission hole 5, the sidewall of reaction chamber 1, diapire and loam cake have formed reaction chamber 1, substrate to be etched is placed on the middle position of reaction chamber 1 diapire, reaction chamber 1 be provided with fetch and deliver substrate fetch and deliver sheet mouth 10;
Be provided with it adaptive uniform flow liner 2 in the reaction chamber 1, uniform flow liner 2 comprises body 21 cylindraceous, body 21 is provided with the transfer port 25 corresponding with fetching and delivering sheet mouth 10, body 21 bottoms are provided with the annular bottom plate 22 that a circle extends internally, the location matches of annular bottom plate 22 and substrate to be etched is distributed with even flowing chute 24 equably on the annular bottom plate 22; The top of body 21 is provided with the mounting flange 23 that is connected with reaction chamber 1, is provided with seal groove between mounting flange 23 and the reaction chamber 1.
Even flowing chute 24 is formed by being the slotted eye that concentric circles arranges, and equally spaced is distributed with a plurality of slotted eyes on the same circumference.Slotted eye is circular arc, and the width of slotted eye is about 1.5mm.The central angle of arc-shaped slot is less than or equal to 20 °.
Reaction chamber 1 one sides are provided with pumping chamber 19, and pumping chamber 19 is connected with the assisted vacuum flowmeter with vacuum pumping pump respectively, and the gas of reaction chamber 1 enters pumping chamber 19 through even flowing chute 24.Reaction chamber 1 has lower side panel 18, epipleural 17 and wallboard 20 surround, lower side panel 18 and epipleural 17 are fixedly connected on the sidewall of reaction chamber 1, between epipleural 17 and the sidewall, between lower side panel 18 and the sidewall, and are between wallboard 20 and epipleural 17 and the lower side panel 18 and are sealed and matched.Vacuum pumping pump comprises molecular pump and mechanical pump, and mechanical pump interface 15 is positioned on the wallboard 20, and molecular pump interface 16 is positioned on the lower side panel 18, and wallboard 20 is provided with assisted vacuum flowmeter interface 14.Epipleural 17 is provided with second observation window 12 that can observe situation in the pumping chamber 19.
Loam cake comprises the chamber lid 3 in capping chamber 1 and the quartz disk 4 that is sealed and matched with the chamber lid, and air admission hole 5 is arranged at quartz disk 4 central authorities, and quartz disk 4 is provided with radio-frequency power supply top electrode interface 6; The diapire of reaction chamber 1 is provided with substrate holding apparatus 7, and substrate holding apparatus 7 is provided with radio-frequency power supply bottom electrode interface 8.Reaction chamber 1 connects main vacuum flowmeter, and the sidewall of reaction chamber 1 is provided with main vacuum flowmeter interface 13.
Reaction chamber 1 be provided with can the observing response chamber first observation window 11 of situation in 1, uniform flow liner 2 is provided with the observation panel 26 corresponding with first observation window 11.First observation window 11 is contour with substrate.The quantity of first observation window 11 is two, is arranged at the relative both sides of reaction chamber 1 respectively.
The course of work of the present invention is as follows:
At first, fetching and delivering sheet mouth 10 places by gate valve coupled reaction chamber 1 and manipulator chamber; Then, connect mechanical pump at the mechanical pump interface, connect molecular pump at the molecular pump interface by valve; Vacuum flowmeter and assisted vacuum flowmeter are connected on the corresponding interface; Check the sealing situation of first observation window 11, second observation window 12, chamber lid 3, quartz disk 4 and substrate holding apparatus 7 and reaction chamber 1 then; If the sealing situation is normally then opened mechanical pump to the reaction extracting vacuum; After the actual measured value of main vacuum flowmeter reaches first predetermined vacuum level, substrate 9 to be etched is sent on the substrate holding apparatus 7 by fetching and delivering sheet mouth 10; Close the gate valve of fetching and delivering sheet mouth 10; Open molecular pump reaction chamber 1 is extracted high vacuum; After reaching second predetermined vacuum level in the reaction chamber 1, process gas enters reaction chamber 1 from central air admission hole 5; Open radio-frequency power supply again, carry out etching technics; After etching technics is finished, close radio-frequency power supply, feed nitrogen from central air admission hole 5 and purge and clean; At last, the substrate finished of etching is by robot arm depicted as it retrieves; Valve-off, mechanical pump, molecular pump.
Beneficial effect of the present invention is:
1, reaction chamber of the present invention and pumping chamber are integral structure, with respect to existing reaction chamber and pumping chamber separate type, reduced the quantity of mechanical seal connector, integrally-built high conformity, high vacuum seal and hold facility in reaction chamber and the pumping chamber are strong, can improve plasma etching speed.
2, the uniform flow liner is installed in the reaction chamber, can effectively prevents from or reduce to prolong the useful life of chamber on the inwall that the etching deposit gathered or be attached to reaction chamber.Liner is installed in the reaction chamber by mounting flange, so liner replacing, easy for installation, only needs regularly replacing or cleaning liner can keep the pure property of etching environment.
3, interior underboarding is provided with the uniform flow slotted eye, and when vacuumizing, the gas of reaction chamber enters in the evacuated chamber through the uniform flow slotted eye, the quantity of uniform flow slotted eye is many, compares general circle hole shape liner commonly used, and the area that air-flow passes through is big, the extraction ability of high vacuum is strong, has improved the uniformity of sheet dish ambient gas.
The described content of this specification embodiment only is enumerating the way of realization of inventive concept; protection scope of the present invention should not be regarded as only limiting to the concrete form that embodiment states, protection scope of the present invention also reach in those skilled in the art conceive according to the present invention the equivalent technologies means that can expect.
Claims (8)
1. the reaction chamber of a dry plasma etching machine, comprise cylindric reaction chamber and the loam cake that covers on reaction chamber, the middle position of loam cake is provided with air admission hole, the sidewall of reaction chamber, diapire and loam cake have formed reaction chamber, substrate to be etched is placed on the middle position of reaction chamber diapire, reaction chamber be provided with fetch and deliver substrate fetch and deliver the sheet mouth;
It is characterized in that: be provided with it adaptive uniform flow liner in the reaction chamber, the uniform flow liner comprises body cylindraceous, body is provided with the transfer port corresponding with fetching and delivering the sheet mouth, the body bottom is provided with the annular bottom plate that a circle extends internally, the location matches of annular bottom plate and substrate to be etched is distributed with the uniform flow slotted eye equably on the annular bottom plate; The top of body is provided with the mounting flange that is connected with reaction chamber, is provided with seal groove between mounting flange and the reaction chamber.
2. the reaction chamber of dry plasma etching machine as claimed in claim 1 is characterized in that: even flowing chute is formed by being the slotted eye that concentric circles arranges, and equally spaced is distributed with a plurality of slotted eyes on the same circumference.
3. the reaction chamber of dry plasma etching machine as claimed in claim 2, it is characterized in that: slotted eye is circular arc, and the width of slotted eye is about 1.5mm, the central angle of arc-shaped slot is less than or equal to 20 °.
4. as the reaction chamber of one of claim 1 or 3 described dry plasma etching machine, it is characterized in that: reaction chamber one side is provided with pumping chamber, and pumping chamber is connected with the assisted vacuum flowmeter with vacuum pumping pump respectively, and the gas of reaction chamber enters pumping chamber through even flowing chute.
5. the reaction chamber of dry plasma etching machine as claimed in claim 4, it is characterized in that: reaction chamber has lower side panel, epipleural and wallboard surround, lower side panel and epipleural are fixedly connected on the sidewall of reaction chamber, between epipleural and the sidewall, between lower side panel and the sidewall, and be between wallboard and epipleural and the lower side panel and be sealed and matched.
6. the reaction chamber of dry plasma etching machine as claimed in claim 5, it is characterized in that: vacuum pumping pump comprises molecular pump and mechanical pump, the interface of mechanical pump is positioned on the wallboard, and the interface of molecular pump is positioned on the lower side panel, and epipleural is provided with second observation window that can observe situation in the pumping chamber.
7. the reaction chamber of dry plasma etching machine as claimed in claim 6, it is characterized in that: loam cake comprises the chamber lid in capping chamber and the quartz disk that is sealed and matched with the chamber lid, air admission hole is arranged at quartz disk central authorities, and quartz disk is provided with radio-frequency power supply top electrode interface; The diapire of reaction chamber is provided with substrate holding apparatus, and substrate holding apparatus is provided with radio-frequency power supply bottom electrode interface.
8. the reaction chamber of dry plasma etching machine as claimed in claim 7 is characterized in that: reaction chamber be provided with can the observing response chamber in first observation window of situation, the uniform flow liner is provided with the observation panel corresponding with first observation window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2013102311301A CN103337444A (en) | 2013-06-08 | 2013-06-08 | Reaction chamber of dry plasma etcher |
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| CN2013102311301A CN103337444A (en) | 2013-06-08 | 2013-06-08 | Reaction chamber of dry plasma etcher |
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| CN103337444A true CN103337444A (en) | 2013-10-02 |
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| CN2013102311301A Pending CN103337444A (en) | 2013-06-08 | 2013-06-08 | Reaction chamber of dry plasma etcher |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018233192A1 (en) * | 2017-06-19 | 2018-12-27 | 北京北方华创微电子装备有限公司 | Lower electrode mechanism and reaction chamber |
| CN113745086A (en) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | Semiconductor device for realizing etching or film coating by using plasma |
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Application publication date: 20131002 |