CN109524324B - Semiconductor etching equipment - Google Patents
Semiconductor etching equipment Download PDFInfo
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- CN109524324B CN109524324B CN201710851868.6A CN201710851868A CN109524324B CN 109524324 B CN109524324 B CN 109524324B CN 201710851868 A CN201710851868 A CN 201710851868A CN 109524324 B CN109524324 B CN 109524324B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000005530 etching Methods 0.000 title claims abstract description 50
- 238000006243 chemical reaction Methods 0.000 claims abstract description 122
- 239000000463 material Substances 0.000 claims abstract description 46
- 238000005507 spraying Methods 0.000 claims abstract description 16
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 9
- 239000007921 spray Substances 0.000 claims abstract description 8
- 238000001914 filtration Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 239000010453 quartz Substances 0.000 claims description 49
- 230000005540 biological transmission Effects 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims 2
- 239000000047 product Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 15
- 238000001312 dry etching Methods 0.000 abstract description 12
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000012423 maintenance Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000001788 irregular Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- -1 CxFy Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a semiconductor etching device, comprising: an upper electrode spray tray; an annular sidewall; is connected with the upper electrode spraying disc; a lateral flow reaction element attached to the annular sidewall; and a lower electrode carrier aligned below the lateral flow reaction element; the lateral flow reaction element comprises at least two layers of reaction material rings and a plurality of connecting parts positioned between the reaction material rings, a plurality of filtering channels are provided on the side wall of the lateral flow reaction element, and the reaction material rings and the connecting parts are integrally formed to inhibit the adhesion of reaction products on the lateral flow reaction element. The reaction material ring and the connecting part are integrally formed, so that the adhesion state of a product in a reaction cavity of the dry etching machine can be effectively improved, the influence of the surface cleanliness of the wafer caused by the falling of the product in the moving process of the lateral flow reaction element is avoided, and the reliability and the yield of the product are effectively improved.
Description
Technical Field
The invention belongs to the field of design and manufacture of semiconductor equipment, and particularly relates to semiconductor etching equipment.
Background
Dry etching is a technique of performing thin film etching using plasma. When the gas is present in the form of a plasma, it has two characteristics: on one hand, the chemical activity of the gases in the plasma is much stronger than that of the gases in a normal state, and the gases can react with the materials more quickly by selecting proper gases according to the difference of the etched materials, so that the aim of etching removal is fulfilled; on the other hand, the electric field can be used for guiding and accelerating the plasma, so that the plasma has certain energy, and when the plasma bombards the surface of the etched object, atoms of the etched object material can be knocked out, thereby achieving the purpose of etching by utilizing physical energy transfer.
In the semiconductor manufacturing industry, the production capacity is required to be improved while the semiconductor manufacturing industry is in an increasingly competitive situation, and the yield of the wafer is also required to be improved, so that the productivity output can be optimized. Therefore, in the semiconductor industry, productivity and yield are important aspects, one is the control of the support aspect, and the other is the control of the machine.
A conventional semiconductor dry etching chamber design is shown in fig. 1, which generally comprises an upper electrode spray plate 101, a sidewall 102, a lower electrode 105, and a reaction device composed of four quartz rings 103 and 12 plasma erosion resistant spacers 104. The reaction element of the reaction chamber has imperfect design, and a product (polymer)106 generated during a wafer process reaction is easily attached to a process reaction element assembly structure, especially to a contact area between the quartz ring 103 and the anti-plasma erosion gasket 104, so that the reaction element to which the product (polymer)106 is attached inevitably generates vibration and shake during movement, causing a risk of product falling off (polymer peeling), causing pollution in the reaction chamber, and seriously affecting product yield.
In addition, as shown in fig. 2, during the process of disassembling the semiconductor dry etching reaction chamber (e.g., replacing or cleaning), the disassembling process is to disassemble and separate each layer of the quartz ring 103 and the anti-plasma etching gasket 104 in sequence, and replace the new quartz ring 103 and anti-plasma etching gasket 104 or clean them and then install them back in sequence. Such disassembly and assembly procedures are cumbersome, maintenance is inefficient at irregular intervals, the life of the reaction element is reduced, and process risks may be caused by poor assembly of the assembly machine.
In view of the above, it is necessary to provide a semiconductor etching apparatus capable of effectively suppressing the adhesion of reaction chamber products and effectively improving the yield of products.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a semiconductor etching apparatus, which is used to solve the problems that a dry etching reaction chamber in the prior art is easy to attach reaction products and is cumbersome to disassemble and assemble.
To achieve the above and other related objects, the present invention provides a semiconductor etching apparatus, comprising: the upper electrode spraying disc is arranged in a cavity of the semiconductor etching equipment and used for providing plasma gas; an annular sidewall connected to the upper electrode spray tray; a lateral flow reaction element attached to the annular sidewall; the lower electrode carrying platform is aligned below the lateral flow reaction element and is arranged in a cavity in the semiconductor etching equipment; the lateral flow reaction element comprises at least two layers of reaction material rings and a plurality of connecting parts positioned between the reaction material rings, a plurality of filtering channels are provided on the side wall of the lateral flow reaction element, and the reaction material rings and the connecting parts are integrally formed to inhibit the adhesion of reaction products on the lateral flow reaction element.
Preferably, the reaction material ring and the connecting part are integrally formed and are fixedly connected with the annular side wall in a tenon clamping mode.
Preferably, a plurality of positioning columns are arranged on the lower edge of the annular side wall, a plurality of positioning grooves corresponding to the positioning columns are formed in the reaction material ring, and the positioning columns are combined with the positioning grooves.
Preferably, the reaction material ring has a combination hole extending outward in the transverse direction, the annular side wall has a clamping hole corresponding to the combination hole, and when the positioning column is combined with the positioning groove, the combination hole and the clamping hole are aligned with each other and penetrated by a limit bolt to prevent the lateral flow reaction element from sliding relative to the annular side wall.
Preferably, the lower edge of the annular side wall is provided with a plurality of positioning grooves, the reaction material ring is provided with a plurality of positioning columns corresponding to the positioning grooves, and the positioning grooves are combined with the positioning columns.
Preferably, the reaction material ring has a combination hole extending outward in the transverse direction, the annular side wall has a clamping hole corresponding to the combination hole, and when the positioning column is combined with the positioning groove, the combination hole and the clamping hole are aligned with each other and penetrated by a limit bolt to prevent the lateral flow reaction element from sliding relative to the annular side wall.
Preferably, the lower edge of the annular side wall is provided with a plurality of positioning columns, two sides of each positioning column are provided with an arc-shaped limiting groove, the reaction material ring is internally provided with a plurality of positioning grooves corresponding to the positioning columns and limiting columns corresponding to the limiting grooves, the positioning columns are combined with the positioning grooves, and the limiting columns are inserted into the limiting grooves and then fixed at the limiting points of the limiting grooves through rotation.
Preferably, the ring of reactive material and the connecting portion are an integrally formed single piece of the same material.
Preferably, the material of the reaction material ring and the connecting part is quartz.
Preferably, the number of the layers of the reaction material ring included in the lateral flow reaction element is 2-6, and the thickness of the lateral flow reaction element ranges from 50mm to 200 mm.
Preferably, the upper electrode spraying tray is connected with a transmission mechanism for controlling the lateral flow reaction assembly to move up and down relative to the upper electrode spraying tray so as to adjust the distance between the lateral flow reaction assembly and the lower electrode carrying platform.
Preferably, the transmission mechanism controls the moving speed of the lifting movement of the lateral flow reaction component to be 5 mm/s-15 mm/s, and the moving interval is 40 mm-60 mm.
Preferably, the transmission mechanism controls the lateral flow reaction element to move up and down, and the lateral flow reaction element vibrates.
As described above, the semiconductor etching apparatus of the present invention has the following beneficial effects:
1) according to the invention, the reaction material ring and the connecting part are integrally formed, so that the adhesion state of a product in a reaction cavity of the dry etching machine can be effectively improved, the influence of the surface cleanliness of the wafer caused by the falling-off of the product in the moving process of the side flow reaction element is avoided, and the reliability and yield of the product are effectively improved;
2) the original multilayer lateral flow reaction element disassembly method is that each layer of quartz ring and anti-plasma corrosion gasket are disassembled and separated in sequence, and the new quartz ring and anti-plasma corrosion gasket are replaced or cleaned and then are installed back in sequence; the invention modifies the assembly form of the multilayer lateral flow reaction element into an integral forming mode, and can avoid complicated disassembly and installation procedures, increase the irregular maintenance efficiency of the machine and reduce the process risk possibly caused by poor assembly of the machine. The irregular maintenance process can improve the maintenance efficiency and prolong the service life by about 100% or more, for example, the service life (life time) of the conventional multilayer lateral flow reaction element is 1000 to 2000hrs, and the service life of the integrally formed lateral flow reaction element of the invention is 3000 to 3500hrs or more.
3) The invention can effectively improve the adhesion state of the reaction cavity product of the dry etching machine, improves the disassembly and assembly efficiency, and has wide application prospect in the field of semiconductor manufacturing equipment design.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor dry etching reaction chamber in the prior art.
Fig. 2 is a schematic view of a semiconductor dry etching reaction chamber according to the prior art.
Fig. 3 is a schematic view showing an assembly structure of the semiconductor etching apparatus according to embodiment 1 of the present invention.
Fig. 4 is a schematic view showing a disassembled structure of the semiconductor etching apparatus according to embodiment 1 of the present invention.
Fig. 5 is a sectional view showing a disassembled structure of a semiconductor etching apparatus according to embodiment 1 of the present invention.
Fig. 6 is a sectional view showing an assembled structure of a semiconductor etching apparatus of embodiment 2 of the present invention.
Fig. 7 is a sectional view showing a disassembled structure of a semiconductor etching apparatus of embodiment 2 of the present invention.
Fig. 8 is a sectional view showing a disassembled structure of a semiconductor etching apparatus of embodiment 4 of the present invention.
Description of the element reference numerals
101 upper electrode spray plate
102 side wall
103 quartz ring
104 gasket for resisting electrical slurry corrosion
105 lower electrode
106 products
201 upper electrode spray plate
202 annular side wall
203 quartz ring
204 quartz pad
205 positioning column
206 card hole
207 groove
208 combining holes
209 limit bolt
210 bottom electrode
211 limiting groove
212 limiting column
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to 8. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example 1
As shown in fig. 3 to 5, fig. 3 is an assembly structure diagram of the semiconductor etching apparatus of the present embodiment, fig. 4 is a disassembly structure diagram of the semiconductor etching apparatus of the present embodiment, and fig. 5 is a cross-sectional view of the disassembly structure of the semiconductor etching apparatus of the present embodiment. The embodiment provides a semiconductor etching device, which comprises: an upper electrode spray plate 201 which is arranged in a cavity of the semiconductor etching equipment and is used for providing plasma gas; an annular sidewall 202; is connected to the upper electrode spray plate 201; a lateral flow reaction element attached to the annular sidewall 202; and a lower electrode carrier 210, aligned below the lateral flow reaction element and mounted in a chamber in the semiconductor etching apparatus; wherein the side stream reactionThe element comprises at least two layers of reaction material rings and a plurality of connecting parts positioned between the reaction material rings, and is used for providing a plurality of filtering channels on the side wall of the lateral flow reaction element, and the reaction material rings and the connecting parts are integrally formed so as to inhibit the adhesion of reaction products on the lateral flow reaction element. For example, the reaction product includes SiOx, CxFy, SiF4And products of Si, C and F. The filtering channel is used for filtering or reducing laterally moving plasma, and the filtering channel can be a transversely extending slotted hole or a transverse through hole.
The reaction material ring and the connecting portion are made of the same material, and in this embodiment, the reaction material ring and the connecting portion are made of quartz, that is, the quartz ring 203 and the quartz gasket 204 are selected, and the quartz material can effectively improve the corrosion resistance of the lateral flow reaction element and reduce the adhesion of reaction products. Of course, other corrosion resistant materials suitable for etching the reaction chamber are equally suitable and are not limited to the examples listed herein.
As an example, the lower electrode stage 210 is configured as a lower electrode adsorption plate for fixing a wafer to be etched. The upper electrode spraying plate 201 has functions of both gas flow spraying and electrode spraying, and when the gas flow is sprayed out, charged particles in the common gas flow of the upper electrode and the lower electrode carrying platform 210 move towards the wafer in an accelerated manner, and after passing through the annular side wall 202 and the side flow reaction element, the charged particles vertically enter the surface of the wafer, and are physically etched with a large momentum. Meanwhile, the chemical etching reaction is generated by the strong chemical reaction with the surface of the wafer, so that the etching process is a process which is carried out by the physical reaction and the chemical reaction. When the gas flows pass through the lateral flow reaction element, reaction products are attached to the lateral flow reaction element, and the attachment state of the products in the reaction cavity of the dry etching machine table can be effectively improved by arranging the quartz ring 203 and the quartz gasket 204 to be integrally formed.
As shown in fig. 3, the number of the layers of the lateral flow reaction element including the quartz ring 203 is 2 to 6, the thickness of the lateral flow reaction element is in a range of 50mm to 200mm, for example, the thickness of the lateral flow reaction element is 125mm, and the diameter of the quartz ring 203 is 420 mm. The diameter of the quartz spacer 204 is selected to be slightly smaller than the annular width of the quartz ring 203, and the height of the quartz spacer 204 can be selected to be between 3mm and 8mm so as to meet different spacing requirements. In this embodiment, the number of the quartz ring 203 is 4 to meet the thickness requirement of the lateral flow reaction device, and the number of the quartz spacers 204 is 12. The quartz ring 203 and the quartz gasket 204 may be integrally formed by a mold or the like.
As shown in fig. 5, the quartz ring 203 and the quartz spacer 204 are integrally and fixedly connected to the annular sidewall 202 by means of a tenon. Specifically, in this embodiment, a plurality of positioning pillars 205 are disposed on a lower edge of the annular side wall 202, positions of the positioning pillars 205 correspond to positions of the quartz spacers 204, so that the positioning pillars 205 are not exposed from gaps between the quartz rings 203, and a risk of reactant adhesion is reduced, a plurality of positioning grooves 207 corresponding to the positioning pillars 205 are disposed in the quartz rings 203 and the corresponding quartz spacers 204, and the positioning pillars 205 and the positioning grooves 207 are combined to achieve a fixed connection between the quartz rings 203 and the annular side wall 202. In addition, the fixed connection of the reaction material ring and the annular side wall can also comprise an outer buckle and a rotary buckle.
It should be noted that the positioning pillars 205 in fig. 5 are annularly distributed on the annular sidewall 202, and the positioning pillars 205 located in the middle are shown to be disposed on the annular sidewall whose distance from the center of the annular sidewall is a radius, not the cross-sectional structure thereof.
When the positioning post 205 is installed, after the positioning post 205 is aligned with the positioning groove 207, a force is applied to sleeve the positioning groove 207 on the positioning post 205, and the dimensions of the positioning groove 207 and the positioning post 205 are equal, so that the positioning groove 207 and the positioning post 205 are combined and fixed.
During disassembly, a force is applied to pull down the integrally formed quartz ring 203 and the quartz gasket 204, so that the positioning groove 207 is separated from the positioning column 205, and the quartz ring 203 and the annular side wall 202 can be disassembled.
For example, the upper electrode spraying tray 201 is connected to a transmission mechanism, and the transmission mechanism controls the upper electrode spraying tray 201 to move up and down (and simultaneously drives the annular sidewall 202 and the lateral flow reaction device to move up and down), so as to adjust the distance between the upper electrode spraying tray 201 and the lower electrode carrier 210, and control the pressure of the reaction chamber and the flow rate of the reaction plasma. The transmission mechanism controls the moving speed of the upper electrode spraying disc 201 to move up and down to be 5 mm/s-15 mm/s, and the moving interval is 40 mm-60 mm, for example, the moving speed of the upper electrode spraying disc 201 to move up and down is 10mm/s, and the moving interval is 50 mm.
When the transmission mechanism controls the upper electrode spraying disc 201 to move up and down, the lateral flow reaction element vibrates, and reaction products attached to the quartz ring 203 and the quartz gasket 204 risk falling off in the vibrating process.
Example 2
As shown in fig. 6 to 7, fig. 6 is a sectional view of a disassembled structure of the semiconductor etching apparatus, and fig. 7 is a sectional view of an assembled structure of the semiconductor etching apparatus. The present embodiment provides a semiconductor etching apparatus, whose basic structure is as in embodiment 1, wherein, the difference from embodiment 1 is that: the quartz ring 203 has a combination hole 208 extending laterally outward, the positioning post 205 of the annular sidewall has a locking hole 206 corresponding to the combination hole 208, when the positioning post 205 is combined with the positioning groove 207, the combination hole 208 and the locking hole 206 are aligned with each other and penetrated by a limit pin 209 to prevent the relative sliding between the positioning post 205 and the positioning groove 207, i.e. to prevent the relative sliding between the lateral flow reaction element and the annular sidewall 202.
When the positioning post 205 is installed, after the positioning post 205 is aligned with the positioning groove 207, a force is applied to sleeve the positioning groove 207 on the positioning post 205, the dimensions of the positioning groove 207 and the positioning post 205 are equal, so that the positioning groove 207 and the positioning post 205 are combined and fixed, and then the limit pin 209 is inserted into the combination hole 208 and the clamping hole 206 to further prevent the positioning post 205 and the positioning groove 207 from sliding relatively.
During disassembly, the limiting pin 209 is taken out from the combining hole 208 and the clamping hole 206, and then a force is applied to pull down the integrally formed quartz ring 203 and the quartz gasket 204, so that the positioning groove 207 is separated from the positioning column 205, and the quartz ring 203 and the annular side wall 202 can be disassembled.
Example 3
The present embodiment provides a semiconductor etching apparatus, whose basic structure is as in embodiment 1, wherein, the difference from embodiment 1 is that: the lower surface of the annular side wall 202 is provided with a plurality of positioning grooves 207, the quartz ring 203 is provided with a plurality of positioning posts 205 corresponding to the positioning grooves 207, and the positioning posts 205 are combined with the positioning grooves 207 to realize the fixed connection between the quartz ring 203 and the annular side wall 202. Further, the annular sidewall 202 has a combination hole 208 extending laterally outward, the positioning post 205 has a locking hole 206 corresponding to the combination hole 208, when the positioning post 205 is combined with the positioning groove 207, the combination hole 208 and the locking hole 206 are aligned with each other and penetrated by a limit pin 209, so as to prevent the relative sliding between the positioning post 205 and the positioning groove 207, i.e. prevent the relative sliding between the lateral flow reaction element and the annular sidewall 202. The mounting and dismounting manner of the semiconductor etching apparatus of this embodiment is substantially the same as that of embodiment 1 or embodiment 2.
Example 4
As shown in fig. 8, the present embodiment provides a semiconductor etching apparatus, whose basic structure is as in embodiment 1, wherein, the difference from embodiment 1 is that: the lower edge of the annular side wall 202 is provided with a plurality of positioning columns 205, two sides of each positioning column 205 are provided with arc-shaped limiting grooves 211, the reaction material ring is provided with a plurality of positioning grooves 207 corresponding to the positioning columns 205 and limiting columns 212 corresponding to the limiting grooves, the positioning columns 205 are combined with the positioning grooves 207, and the limiting columns 212 are inserted into the limiting grooves 211 and then fixed to the limiting points of the limiting grooves 211 through rotation.
During installation, after the positioning column 205 is aligned with the positioning groove 207, a force is applied to sleeve the positioning groove 207 on the positioning column 205, so that the positioning groove 207 is combined with the positioning column 205, and meanwhile, the limiting column 212 is inserted into the limiting groove 211 and fixed by rotating to the limiting point of the limiting groove 211.
During disassembly, the limiting post 212 is screwed out of the limiting point of the limiting groove 211, and then a force is applied to pull down the integrally formed quartz ring 203 and the quartz gasket 204 integrally, so that the positioning groove 207 is separated from the positioning post 205, and the quartz ring 203 and the annular side wall 202 can be disassembled.
As described above, the semiconductor etching apparatus of the present invention has the following beneficial effects:
1) according to the invention, the reaction material ring 203 and the connecting part 204 are integrally formed, so that the adhesion state of a product in a reaction cavity of the dry etching machine can be effectively improved, the influence of the cleanliness of the surface of a wafer caused by the falling-off of the product in the moving process of a lateral flow reaction element is avoided, and the reliability and yield of a product are effectively improved;
2) the original multilayer lateral flow reaction element disassembly method is that each layer of quartz ring and anti-plasma corrosion gasket are disassembled and separated in sequence, and the new quartz ring and anti-plasma corrosion gasket are replaced or cleaned and then are installed back in sequence; the invention modifies the assembly form of the multilayer lateral flow reaction element into an integral forming mode, and can avoid complicated disassembly and installation procedures, increase the irregular maintenance efficiency of the machine and reduce the process risk possibly caused by poor assembly of the machine. The irregular maintenance process can improve the maintenance efficiency and prolong the service life by about 100% or more, for example, the service life (life time) of the conventional multilayer lateral flow reaction element is 1000 to 2000hrs, and the service life of the integrally formed lateral flow reaction element of the invention is 3000 to 3500hrs or more.
3) The invention can effectively improve the adhesion state of the reaction cavity product of the dry etching machine, improves the disassembly and assembly efficiency, and has wide application prospect in the field of semiconductor manufacturing equipment design.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (13)
1. A semiconductor etching apparatus, characterized in that the semiconductor etching apparatus comprises:
the upper electrode spraying disc is arranged in a cavity of the semiconductor etching equipment and used for providing plasma gas;
an annular sidewall connected to the upper electrode spray tray;
a lateral flow reaction element attached to the annular sidewall; and
the lower electrode carrying platform is aligned below the lateral flow reaction element and is arranged in a cavity in the semiconductor etching equipment;
the lateral flow reaction element comprises at least two layers of reaction material rings and a plurality of connecting parts positioned between the reaction material rings, a plurality of filtering channels are provided on the side wall of the lateral flow reaction element, and the reaction material rings and the connecting parts are integrally formed to inhibit the adhesion of reaction products on the lateral flow reaction element.
2. The semiconductor etching apparatus according to claim 1, wherein: the reaction material ring and the connecting part are integrally formed and are fixedly connected with the annular side wall in a tenon clamping mode.
3. The semiconductor etching apparatus according to claim 2, wherein: the lower edge of the annular side wall is provided with a plurality of positioning columns, the reaction material ring is internally provided with a plurality of positioning grooves corresponding to the positioning columns, and the positioning columns are combined with the positioning grooves.
4. The semiconductor etching apparatus according to claim 3, wherein: the reaction material ring is provided with a combination hole extending outwards in the transverse direction, the annular side wall is provided with a clamping hole corresponding to the combination hole, and after the positioning column is combined with the positioning groove, the combination hole and the clamping hole are aligned with each other and are connected in a penetrating manner through a limiting bolt so as to prevent the lateral flow reaction element from sliding relative to the annular side wall.
5. The semiconductor etching apparatus according to claim 2, wherein: the lower edge of annular lateral wall is equipped with a plurality of positioning groove, reaction material ring have with a plurality of reference column that positioning groove corresponds, positioning groove with the reference column combines.
6. The semiconductor etching apparatus according to claim 5, wherein: the reaction material ring is provided with a combination hole extending outwards in the transverse direction, the annular side wall is provided with a clamping hole corresponding to the combination hole, and after the positioning column is combined with the positioning groove, the combination hole and the clamping hole are aligned with each other and are connected in a penetrating manner through a limiting bolt so as to prevent the lateral flow reaction element from sliding relative to the annular side wall.
7. The semiconductor etching apparatus according to claim 1, wherein: the lower edge of annular lateral wall is equipped with a plurality of reference column, the reference column both sides have curved spacing groove, reaction material has in the ring with a plurality of positioning groove that the reference column corresponds and with the spacing post that the spacing groove corresponds, the reference column with the positioning groove combines, the spacing post inserts behind the spacing groove, through rotatory extremely the spacing department of spacing groove realizes fixedly.
8. The semiconductor etching apparatus according to claim 1, wherein: the reaction material ring and the connecting part are integrally formed single pieces made of the same material.
9. The semiconductor etching apparatus according to claim 8, wherein: the reaction material ring and the connecting part are made of quartz.
10. The semiconductor etching apparatus according to claim 1, wherein: the number of layers of the reaction material ring included in the lateral flow reaction element is 2-6, and the thickness range of the lateral flow reaction element is 50-200 mm.
11. The semiconductor etching apparatus according to any one of claims 1 to 10, characterized in that: the upper electrode spraying disc is connected with a transmission mechanism for controlling the lateral flow reaction element to move up and down relative to the upper electrode spraying disc so as to adjust the distance between the lateral flow reaction element and the lower electrode carrying platform.
12. The semiconductor etching apparatus according to claim 11, wherein: the transmission mechanism controls the moving speed of the lifting movement of the lateral flow reaction element to be 5 mm/s-15 mm/s, and the moving interval is 40 mm-60 mm.
13. The semiconductor etching apparatus according to claim 11, wherein: when the transmission mechanism controls the lateral flow reaction element to move up and down, the lateral flow reaction element vibrates.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710851868.6A CN109524324B (en) | 2017-09-19 | 2017-09-19 | Semiconductor etching equipment |
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| CN201710851868.6A CN109524324B (en) | 2017-09-19 | 2017-09-19 | Semiconductor etching equipment |
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| CN109524324B true CN109524324B (en) | 2021-01-26 |
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| CN101399197A (en) * | 2007-09-30 | 2009-04-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
| CN101426949A (en) * | 2006-02-27 | 2009-05-06 | 朗姆研究公司 | Integrated capacitive and inductive power sources for a plasma etching chamber |
| CN101512040A (en) * | 2005-01-27 | 2009-08-19 | 兰姆研究有限公司 | Confinement ring drive |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101512040A (en) * | 2005-01-27 | 2009-08-19 | 兰姆研究有限公司 | Confinement ring drive |
| CN101426949A (en) * | 2006-02-27 | 2009-05-06 | 朗姆研究公司 | Integrated capacitive and inductive power sources for a plasma etching chamber |
| CN101399197A (en) * | 2007-09-30 | 2009-04-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
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