CN210325711U

CN210325711U - Dry etching equipment

Info

Publication number: CN210325711U
Application number: CN201921358890.8U
Authority: CN
Inventors: 薛荣华; 朱进; 刘家桦; 叶日铨
Original assignee: Huaian Imaging Device Manufacturer Corp
Current assignee: Huaian Imaging Device Manufacturer Corp
Priority date: 2019-08-20
Filing date: 2019-08-20
Publication date: 2020-04-14
Anticipated expiration: 2029-08-20

Abstract

The utility model provides a dry etching equipment, include: the electrostatic chuck is used for supporting and adsorbing the wafer; the conducting ring is arranged on the periphery of the electrostatic chuck and is grounded; the conducting ring is provided with a plurality of first through holes which are communicated along the height direction, and the arrangement of the first through holes is more beneficial to the downward discharge of air flow in a reaction chamber of the dry etching equipment, so that the uniformity of the etching rate of the edge part of the wafer is improved.

Description

Dry etching equipment

Technical Field

The utility model relates to a semiconductor technology field, more specifically say, the utility model relates to a dry etching equipment.

Background

The dry etching equipment generally supports and fixes a wafer through an Electrostatic Chuck, and the principle of the Electrostatic Chuck (E-Chuck) is that the wafer is adsorbed and fixed through Electrostatic force generated by an insulating layer, Electrostatic charge is generated on the surface of the Electrostatic Chuck through external voltage applied to the Electrostatic Chuck to form Electrostatic force, in order to prevent the Electrostatic charge from being dissipated to a reaction chamber of the dry etching equipment to influence the etching effect, a grounded conductive ring is generally arranged on the periphery of the Electrostatic Chuck to guide the dissipated Electrostatic charge to a ground end, because most of the existing conductive rings are integrally formed and occupy a larger space of the reaction chamber, the structural design is not beneficial to downward discharge of airflow in the reaction chamber, and further influences the uniformity of the etching rate of the edge part of the wafer.

Therefore, there is a need for an improvement of the existing dry etching apparatus.

SUMMERY OF THE UTILITY MODEL

In order to solve the above problems in the prior art, a dry etching apparatus for improving the etching rate at the edge of a wafer is provided.

The utility model provides a dry etching equipment, include: the electrostatic chuck is used for supporting and adsorbing the wafer; the conducting ring is arranged on the periphery of the electrostatic chuck and is grounded; the conducting ring is provided with a plurality of first through holes which are communicated along the height direction.

The arrangement of the first through holes is more beneficial to the downward discharge of plasma airflow in the reaction chamber, and further the uniformity of the etching rate of the edge part of the wafer is improved.

The utility model discloses an among the preferred technical scheme, the even interval distribution of circumference along the conducting ring of first through-hole.

The utility model discloses an among the preferred technical scheme, still including the protection ring that stacks at the conducting ring upper surface.

The utility model discloses an among the preferred technical scheme, be equipped with on the protection ring with the corresponding second through-hole in first through-hole position.

In the technical scheme, in the etching process of the existing dry etching equipment, reaction products are easy to drop and accumulate on the conductive ring and the protection ring, so that the cleanliness of the reaction chamber is affected, and the wafer is poor in serious cases.

The utility model discloses an among the preferred technical scheme, the open area of second through-hole is not less than the open area of first through-hole.

In the preferred technical solution of the present invention, the dry etching apparatus is a plasma etching apparatus.

The utility model discloses an among the preferred technical scheme, still include: and the groove is annularly arranged on the periphery of the electrostatic chuck so as to be used for assembling the conducting ring and the protection ring.

The utility model discloses an among the preferred technical scheme, the upper surface of protection ring is not less than the upper surface of electrostatic chuck.

In the technical scheme, the upper surface of the protection ring is not lower than the upper surface of the electrostatic chuck, so that the side edge of the electrostatic chuck can be protected from being etched by plasma.

The utility model discloses an among the preferred technical scheme, conducting ring and electrostatic chuck interval set up.

The utility model discloses an among the preferred technical scheme, first through-hole forms to a plurality of bar grid form through-holes of radially extending along the conducting ring.

In the technical scheme, the surface area of the conductive ring can be fully utilized to open the holes, the lower discharge amount of the plasma airflow is improved to a greater extent, and the uniformity of the airflow is ensured.

Drawings

Fig. 1 is a schematic structural diagram of a dry etching apparatus according to a preferred embodiment of the present invention;

FIG. 2 is a schematic top view of the conductive ring and the electrostatic chuck of the dry etching apparatus of FIG. 1;

fig. 3 is a schematic top view of the protective ring and the electrostatic chuck of the dry etching apparatus of fig. 1.

Description of reference numerals: 100-dry etching equipment, 101-a reaction chamber, 102-a gas generator, 103-an electric field generator, 104-plasma and 105-a groove; 1-electrostatic chuck; 2-a wafer; 3-conductive ring, 31-first via; 4-ground terminal; 5-guard ring, 51-second via.

Detailed Description

The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these technical solutions are only used for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention. And can be modified as needed by those skilled in the art to suit particular applications.

It should be noted that in the description of the preferred embodiments of the present invention, the terms of direction or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc., are based on the directions or positional relationships shown in the drawings, which are for convenience of description only, and do not indicate or imply that the devices or components must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

As shown in fig. 1, the dry etching apparatus 100 provided in this embodiment uses an electrostatic chuck 1 to support and adsorb and fix a wafer 2, and a grounded conductive ring 3 is disposed on the outer periphery of the electrostatic chuck 1 to guide electrostatic charges dissipated from the electrostatic chuck 1 to a ground 4, wherein the electrostatic chuck 1 and the conductive ring 3 are both disposed along a horizontal direction, specifically, a plasma etching apparatus is exemplified, and the plasma etching apparatus is one of the dry etching apparatuses, and first, the dry etching apparatus has a reaction chamber 101 capable of providing a vacuum condition, a gas generator 102 capable of introducing a reactive gas into the reaction chamber 101, and an electric field generator 103 capable of applying a high-frequency electric field to the reactive gas, so that accelerated electrons collide with gas molecules to form a plasma 104, in the process of forming a target pattern on the surface of the wafer 2 by bombarding the material on the surface of the wafer 2 with the plasma 104 to generate a reaction product (not shown), since the conductive ring 3 is generally made of a metal alloy material, such as an aluminum alloy material, if the conductive ring 3 is directly exposed to the plasma, the surface of the conductive ring is also etched by the plasma 104, in order to prevent the conductive ring 3 from being etched by the plasma 104, the plasma etching apparatus is further provided with a protection ring 5 stacked on the upper surface of the conductive ring 3, and the protection ring 5 covers the entire upper surface of the conductive ring 3, specifically, in a preferred embodiment of the present embodiment, the dry etching apparatus 100 further includes: the groove 105 is annularly arranged on the periphery of the electrostatic chuck 1 to assemble the conducting ring 3 and the protection ring 5, and the specific assembly mode can be embedding or can be fixed in a clamping or screwing mode; the material of the protection ring 5 may be quartz, or may be other materials capable of effectively preventing the conductive ring 3 therebelow from being etched, for example, epoxy resin, in this embodiment, the protection ring 5 is a consumable material, and is gradually etched as the amount of the goods is increased, so that the protection ring 5 needs to be replaced periodically.

In a preferred technical solution of this embodiment, as shown in fig. 2, the conductive ring 3 is provided with a plurality of first through holes 31 penetrating in the height direction, and as shown in fig. 3, the protective ring 5 is provided with second through holes 51 corresponding to the first through holes 31, preferably, the first through holes 31 are uniformly distributed at intervals along the circumferential direction of the conductive ring 3, and the first through holes 31 are formed as a plurality of strip-shaped grid-shaped through holes extending in the radial direction of the conductive ring 3, so as to fully utilize the surface area of the conductive ring 3 to open the holes, so as to improve the lower discharge amount of the plasma 104 airflow to a greater extent and ensure the uniformity of the airflow, it should be noted that, in the height direction mentioned in this embodiment, that is, the thickness direction of the conductive ring 3, and when the conductive ring 3 is arranged in the horizontal direction, the thickness thereof is also the height thereof.

The arrangement of the first through hole 31 is more beneficial to the downward discharge of the plasma 104 gas flow in the reaction chamber 101, so as to improve the uniformity of the etching rate at the edge of the wafer 2, and in addition, in the etching process of the conventional dry etching apparatus, reaction products are easy to drop and accumulate on the conductive ring 3 and the protection ring 5, which affects the cleanliness of the reaction chamber 101, and may cause the defect of the wafer 2 in severe cases, whereas in the dry etching apparatus 100 provided in this embodiment, because the first through hole 31 and the second through hole 51 are arranged, the reaction products can be directly discharged from the first through hole 31 and the second through hole 51 to the bottom of the dry etching apparatus 100, preferably, in a preferred technical solution of this embodiment, the bottom of the dry etching apparatus 100 is further provided with a reaction product collecting unit (not shown), and the reaction product receptor unit is detachably mounted right below the chuck static electricity 1, the device is convenient for users to clean the device regularly.

In the preferred embodiment of the present invention, the opening area of the second through hole 51 is not smaller than the opening area of the first through hole 31, so that the first through hole 31 can be fully utilized to exhaust air.

In a preferred embodiment of the present invention, the upper surface of the protection ring 5 is not lower than the upper surface of the electrostatic chuck 1, so as to shield the side edge of the electrostatic chuck 1 from the side to prevent the side edge of the electrostatic chuck 1 from being etched by the plasma 104.

In a preferred embodiment of the present invention, the conductive ring 3 and the electrostatic chuck 1 are spaced apart from each other to prevent electrostatic charges on the electrostatic chuck 1 from being directly guided to the conductive ring 3, and in some alternative embodiments, an insulating ring (not shown) is further disposed between the conductive ring 3 and the electrostatic chuck 1 to further electrically isolate the conductive ring 3 from the electrostatic chuck 1.

So far, the technical solutions of the present invention have been described with reference to the accompanying drawings, but it is obvious to those skilled in the art that the scope of the present invention is not limited to these specific technical solutions. Without departing from the principle of the present invention, a person skilled in the art can make equivalent changes or substitutions to the related technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

Claims

1. A dry etching apparatus comprising:

the electrostatic chuck is used for supporting and adsorbing the wafer; and

the conducting ring is arranged on the periphery of the electrostatic chuck and is grounded;

the conductive ring is characterized in that a plurality of first through holes which are communicated along the height direction are formed in the conductive ring.

2. The dry etching apparatus of claim 1, wherein the first through holes are evenly spaced along a circumference of the conductive ring.

3. The dry etching apparatus of claim 1 or 2, further comprising a guard ring overlying an upper surface of the conductive ring.

4. The dry etching apparatus according to claim 3, wherein the guard ring is provided with a second through hole corresponding to the first through hole.

5. The dry etching apparatus according to claim 4, wherein an opening area of the second through hole is not smaller than an opening area of the first through hole.

6. The dry etching apparatus according to claim 1, wherein the dry etching apparatus is a plasma etching apparatus.

7. The dry etching apparatus according to claim 3, further comprising: the groove is arranged on the periphery of the electrostatic chuck in a surrounding mode so that the conducting ring and the protection ring can be assembled in the groove.

8. The dry etching apparatus of claim 3, wherein an upper surface of the guard ring is not lower than an upper surface of the electrostatic chuck.

9. The dry etching apparatus of claim 1, wherein the conductive ring and the electrostatic chuck are spaced apart.

10. The dry etching apparatus according to claim 1, wherein the first through-hole is formed as a plurality of bar-shaped grid-like through-holes extending in a radial direction of the conductive ring.