CN1848372A - Plasma reaction device - Google Patents
Plasma reaction device Download PDFInfo
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- CN1848372A CN1848372A CN 200510126346 CN200510126346A CN1848372A CN 1848372 A CN1848372 A CN 1848372A CN 200510126346 CN200510126346 CN 200510126346 CN 200510126346 A CN200510126346 A CN 200510126346A CN 1848372 A CN1848372 A CN 1848372A
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Abstract
The present invention relates to a plasma reaction equipment used in semiconductor wafer manufacture process. It is characterized by that said plasma reaction equipment includes the following several portions: insulating window body mounted on the wall of cavity chamber, the described insulating window body includes upper cover with gas inlet and base cover, in which a cavity chamber is set in the base cover interior, on the bottom wall of said cavity chamber several central holes are uniformly distributed. Said invention can make the reaction gas be uniformly distributed in reaction chamber.
Description
Technical field
The present invention relates to a kind of plasma reaction device, particularly a kind of plasma reaction device that is applied in the semiconductor wafer manufacturing technique.
Background technology
Semiconductor machining comprises the deposition processes of the chemical vapor deposition (CVD) of metal, dielectric and semi-conducting material, the etching of these layers, polishing of photoresist mask layer or the like.In the situation of etching, plasma etching is generally used for etching metal, dielectric and semi-conducting material.The typical structure of the plasma reactor of parallel plate type comprises the air chamber that contains one or more baffle plate, allows etching gas by its top electrode, silicon wafer is supported on the support of bottom electrode radio-frequency power supply and be used for providing to air chamber the gas jet source of gas.Gas is formed plasma by electrode ionization.Plasma etching is supported on the wafer below the top electrode.
During the plasma etching process, make gas ionization to form plasma by add lot of energy to the gas that is in lower pressure.By regulating the current potential of wafer, charged particle can be directed to so that vertically collide on the wafer in the plasma, makes that the material of no masked areas is removed on the wafer.
In order on the entire wafer surface, to obtain uniform etch-rate, wish on wafer surface, can distribute uniformly plasma.Conventional gas distribution design comprises that multiinjector, shower are first-class.Increase along with semiconductor-based chip size, to realize on substrate that uniform distribution of gas becomes difficult more, the quantity of opening and baffle plate must roll up to keep the uniformity of etching gas, complexity and the expense of making a kind of like this gas distribution apparatus also greatly increase, what is more important, this gas distribution plate can exert an influence to the thickness of insulating window, thickness increases the coupling efficiency that can reduce with coil energy, influence the generation of plasma, thereby be necessary that article on plasma precursor reactant device is optimized design.
Semiconductor machining system is used for processing semiconductor wafer, thereby makes integrated circuit.Particularly in processes such as etching, oxidation, chemical vapor deposition (CVD), use semiconductor machining usually based on plasma.Traditional plasma process system is by being controlled at air-flow or the plasma flow in the plasma process chamber, so that the environment of the best is provided for processed wafer.The uneven distribution of processing gas that flows to vacuum chamber with in the vacuum chamber can the article on plasma body even distribution have a negative impact.
Common plasma reaction device structure comprises that by chamber wall 3 and electric insulation forms 2, chamber wall 3 bottoms are provided with exhaust outlet 6 as shown in Figure 1, and the upper end is provided with peripheral inlet port 5, and forms 2 are provided with central air induction mouth 4, and insulating window 2 is provided with coil 1.Wherein chamber wall 3 and insulating window 2 formed an enclosure space 9, i.e. reative cell, and electrostatic chuck or mechanical chuck 7 are placed on enclosure space 9 central authorities, are placed with wafer 8 on the chuck 7.During work, exhaust outlet 6 is connected with vacuum plant (dried pump) etc., enclosure space 9 is manufactured vacuum environment, discharge the residual substance of reaction, process gas is by central air induction mouth 4 or peripheral inlet port 5, and perhaps the two is combined into this space, the coil 1 of insulating window 2 tops passes to radio-frequency (RF) energy, by insulating window 2 couplings, in enclosure space 9, form plasma, the wafer on the chuck 78 is carried out etching.This traditional distribution of gas of nozzle arrangements in enclosure space 9 is inhomogeneous.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is at above-mentioned the deficiencies in the prior art, provide a kind of and can improve the inhomogeneity plasma reaction device of reaction indoor gas.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
Plasma reaction device of the present invention comprises the insulating window that is installed in above the chamber wall, and wherein said insulating window comprises loam cake and the Ji Gai with air inlet, and wherein Ji Gainei is provided with chamber, is evenly distributed with some medium pores on the chamber bottom.
Wherein said base covers and is provided with peripheral inlet port, be provided with baffle ring in the chamber of described Ji Gai, baffle ring is divided into circular space and annular space with described chamber, annular space is communicated with peripheral inlet port, described some medium pores are distributed on the diapire of circular space, the diapire of annular space is provided with some periphery holes, these periphery holes near the peripheral inlet port position to increasing gradually away from the peripheral inlet port position distribution.
Wherein be evenly distributed with some periphery holes on the diapire of annular space, the thickness of the diapire of annular space near the peripheral inlet port position to away from peripheral inlet port position progressive additive.
Wherein be evenly distributed with some periphery holes on the diapire of annular space, the aperture of some periphery holes near the peripheral inlet port position to increasing gradually away from the peripheral inlet port position.
Its described base covers and is provided with peripheral inlet port, be provided with baffle ring in the chamber of described Ji Gai, baffle ring is divided into circular space and annular space with described chamber, annular space is communicated with peripheral inlet port, described some medium pores are distributed on the diapire of circular space, it is lateral opening that baffle ring is provided with plurality of side, lateral orifices near the peripheral inlet port position to increasing gradually away from the peripheral inlet port position distribution.
It is lateral opening wherein to be evenly distributed with plurality of side on the baffle ring, the thickness of baffle ring near the peripheral inlet port position to away from peripheral inlet port (5) position progressive additive.
It is lateral opening wherein to be evenly distributed with plurality of side on the baffle ring, the aperture of some periphery holes near the peripheral inlet port position to increasing gradually away from the peripheral inlet port position.
Wherein said circular space is more than or equal to the size of wafer to be etched; Described lateral orifices is bellmouth or stepped hole.
Wherein said medium pore, periphery hole are bellmouth or stepped hole.
(3) beneficial effect
The advantage and the good effect of plasma reaction device of the present invention are: among the present invention, because insulating window is made up of loam cake and Ji Gai, and Ji Gainei is provided with chamber, is evenly distributed with some medium pores on the chamber bottom.So the reacting gas that is entered by air inlet is subjected to the buffering of diapire in the chamber of Ji Gai, in whole chamber, be tending towards evenly, the some medium pores by diapire enter reative cell again, and it is even that the distribution in reative cell also is tending towards; And the area of base lid chamber bottom is bigger, is equivalent to have the air inlet simultaneously of several air inlets concerning reative cell, so the reaction indoor gas is more even.
Description of drawings
Fig. 1 is the structural representation of existing plasma reaction device;
Fig. 2 is first kind of example structure schematic diagram of plasma reaction device of the present invention;
Fig. 3 is the vertical view of Ji Gai among Fig. 2;
Fig. 4 is first kind of example structure schematic diagram of plasma reaction device of the present invention.
Among the figure: 1. coil; 2. insulating window; 3. chamber wall; 4. central air induction mouth; 5. peripheral inlet port; 6. exhaust outlet; 7. chuck; 8. wafer; 9. enclosure space; 13. medium pore; 14. circular space; 15. annular space; 16. baffle ring; 18. inwall; 20. lateral orifices; 21. loam cake; 22. Ji Gai.
Embodiment
Below in conjunction with accompanying drawing, further describe the embodiment of plasma reaction device of the present invention, but be not used for limiting protection scope of the present invention.
Referring to Fig. 2 and Fig. 3.First kind of example structure of plasma reaction device of the present invention comprises the insulating window 2 that is installed in above the chamber wall 3.Insulating window 2 is made up of base lid 22 and the lid 21 that is fixed on the base lid 22.Wherein loam cake 21 central authorities are provided with air inlet 4, and base lid 22 is provided with peripheral inlet port 5, are provided with chamber in the base lid 22, are provided with baffle ring 16 in the chamber, and baffle ring 16 is divided into circular space 14 and annular space 15 with described chamber.Annular space 15 is communicated with peripheral inlet port 5, is evenly distributed with some medium pores 13 on circular space 14 chamber bottoms.Circular space 14 can be slightly less than the size of wafer to be etched.The diapire of annular space 15 is provided with some periphery holes 12.Circular space 14 and annular space 15 are communicated with air inlet 4, peripheral inlet port 5 respectively, provide process gas to reaction chamber separately, so that the distribution of gas in the reative cell space is even, thereby make the entire wafer surface energy access the plasma of uniform density.In the circular space 14, all can be lower than zone away from the regional gas pressure of air inlet 4, flow velocity etc. near air inlet 4, like this, if the periphery hole 12 on circular space 14 diapires evenly distributes, middle body and periphery distribution of gas certainly will be uneven in the reative cell so.In shown in Figure 3, the aperture of periphery hole 12 is identical, but it is uneven distributing, from near peripheral inlet port 5 positions to increasing gradually away from peripheral inlet port 5 number of positions, so the gas in full annular space 15 is uniform, this portion gas adds to reative cell inner peripheral zone after entering reative cell, so that reative cell in distribution of gas very even.
Some periphery holes 12 can also be arranged like this: some periphery holes 12 are equally distributed, and the aperture of periphery hole 12 is different, the aperture of some periphery holes 12 near peripheral inlet port 5 positions to increasing gradually away from peripheral inlet port 5 positions.Increased gas flow area like this, can reduce the pressure drop of gas simultaneously away from the periphery hole 12 of peripheral inlet port 5.
In the present embodiment, some periphery holes 12 can also have multiple distribution form, and for example, the aperture of some periphery holes 12 is identical, and be equally distributed, the thickness of the diapire of annular space 15 near peripheral inlet port 5 positions to away from peripheral inlet port 5 position progressive additives.As long as gas density that can compensatory reaction indoor and outdoor region.
Three kinds of different arrangement forms at above-mentioned some periphery holes 12 of mentioning also can be used in combination, the more outstanding effect that can obtain superposeing.
Referring to Fig. 4.Second kind of example structure of plasma reaction device of the present invention, itself and first kind of example structure are basic identical, and difference only is do not have the hole on the diapire of annular space 15, and plurality of side lateral opening 20 is set on baffle ring 16.Circular space 14 can be slightly larger than or equal the size of wafer to be etched.The aperture of plurality of side lateral opening 20 is identical, is uneven but distribute, the quantity of plurality of side lateral opening 20 near peripheral inlet port 5 positions to increasing gradually away from peripheral inlet port 5 position distribution.
Plurality of side lateral opening 20 can also be arranged like this: the aperture as some lateral orifices 20 is identical, and evenly distributes on baffle ring 16, the thickness of baffle ring 16 near peripheral inlet port 5 positions to away from peripheral inlet port 5 position progressive additives.
In the present embodiment, plurality of side lateral opening 20 can also have other arrangement form, evenly distributes on baffle ring 16 as some lateral orifices 20, and the aperture of plurality of side lateral opening 20 is different, near peripheral inlet port 5 positions to increasing gradually away from peripheral inlet port 5 positions.As long as can compensate the fine difference of circular space 14 interior middle bodies and periphery gas density.
In the present embodiment, the effect of periphery hole 20 is to send the process gas that peripheral inlet port 5 sprays to zone 15, and is evenly distributed on inwall 18 peripheral regions of baffle ring 16.Mainly be distributed in the middle section in space 14 by the gas of air inlet 4 ejection, offer reative cell equably by hole medium pore 13 at last.Periphery hole 20 on the baffle ring 16 distributes according to the principle of lateral orifices 12 among first embodiment, be that the aperture is when identical, away from the regional opening of peripheral inlet port 5 more than zone near peripheral inlet port 5, certainly the diameter in each hole also can be different, simultaneously, baffle ring 16 wall thickness own can change, wall thickness near peripheral inlet port 5 is big, when gas stream is crossed this region apertures, increased pressure drop, little at part wall thickness away from peripheral inlet port 5, reduce the pressure drop of gas by this region apertures, guarantee the gas pressure unanimity of inwall 18 peripheries of baffle ring 16.Periphery hole 12 among the present invention, lateral orifices 20 and medium pore 13 all can be variable cross-section holes such as bellmouth or stepped hole.
More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.
Claims (10)
1. plasma reaction device, comprise the insulating window (2) that is installed in above the chamber wall (3), it is characterized in that described insulating window (2) comprises the have air inlet loam cake (21) and the Ji Gai (22) of (4), wherein be provided with chamber in the Ji Gai (22), be evenly distributed with some medium pores (13) on the chamber bottom.
2. plasma reaction device according to claim 1, it is characterized in that described Ji Gai (22) is provided with peripheral inlet port (5), be provided with baffle ring (16) in the chamber of described Ji Gai (22), baffle ring (16) is divided into circular space (14) and annular space (15) with described chamber, annular space (15) is communicated with peripheral inlet port (5), described some medium pores (13) are distributed on the diapire of circular space (14), the diapire of annular space (15) is provided with some periphery holes (12), these periphery holes (12) near peripheral inlet port (5) position to increasing gradually away from peripheral inlet port (5) position distribution.
3. plasma reaction device according to claim 1, it is characterized in that described Ji Gai (22) is provided with peripheral inlet port (5), be provided with baffle ring (16) in the chamber of described Ji Gai (22), baffle ring (16) is divided into circular space (14) and annular space (15) with described chamber, annular space (15) is communicated with peripheral inlet port (5), described some medium pores (13) are distributed on the diapire of circular space (14), be evenly distributed with some periphery holes (12) on the diapire of annular space (15), the thickness of the diapire of annular space (15) near peripheral inlet port (5) position to away from peripheral inlet port (5) position progressive additive.
4. plasma reaction device according to claim 1, it is characterized in that described Ji Gai (22) is provided with peripheral inlet port (5), be provided with baffle ring (16) in the chamber of described Ji Gai (22), baffle ring (16) is divided into circular space (14) and annular space (15) with described chamber, annular space (15) is communicated with peripheral inlet port (5), described some medium pores (13) are distributed on the diapire of circular space (14), be evenly distributed with some periphery holes (12) on the diapire of annular space (15), the aperture of some periphery holes (12) near peripheral inlet port (5) position to increasing gradually away from peripheral inlet port (5) position.
5. plasma reaction device according to claim 1, it is characterized in that described Ji Gai (22) is provided with peripheral inlet port (5), be provided with baffle ring (16) in the chamber of described Ji Gai (22), baffle ring (16) is divided into circular space (14) and annular space (15) with described chamber, annular space (15) is communicated with peripheral inlet port (5), described some medium pores (13) are distributed on the diapire of circular space (14), baffle ring (16) is provided with plurality of side lateral opening (20), lateral orifices (20) near peripheral inlet port (5) position to increasing gradually away from peripheral inlet port (5) position distribution.
6. plasma reaction device according to claim 1, it is characterized in that described Ji Gai (22) is provided with peripheral inlet port (5), be provided with baffle ring (16) in the chamber of described Ji Gai (22), baffle ring (16) is divided into circular space (14) and annular space (15) with described chamber, annular space (15) is communicated with peripheral inlet port (5), described some medium pores (13) are distributed on the diapire of circular space (14), be evenly distributed with plurality of side lateral opening (20) on the baffle ring (16), the thickness of baffle ring (16) near peripheral inlet port (5) position to away from peripheral inlet port (5) position progressive additive.
7. plasma reaction device according to claim 1, it is characterized in that described Ji Gai (22) is provided with peripheral inlet port (5), be provided with baffle ring (16) in the chamber of described Ji Gai (22), baffle ring (16) is divided into circular space (14) and annular space (15) with described chamber, annular space (15) is communicated with peripheral inlet port (5), described some medium pores (13) are distributed on the diapire of circular space (14), be evenly distributed with plurality of side lateral opening (20) on the baffle ring (16), the aperture of some periphery holes (12) near peripheral inlet port (5) position to increasing gradually away from peripheral inlet port (5) position.
8. according to claim 5,6 or 7 described plasma reaction devices, it is characterized in that the size of described circular space (14) more than or equal to wafer to be etched; Described lateral orifices (20) is bellmouth or stepped hole.
9. according to the arbitrary described plasma reaction device of claim 1～8, it is characterized in that described medium pore (13) is bellmouth or stepped hole.
10. according to claim 2,3 or 4 described plasma reaction devices, it is characterized in that described periphery hole (12) is bellmouth or stepped hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263467A CN100405537C (en) | 2005-12-07 | 2005-12-07 | Plasma reaction device |
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| CNB2005101263467A CN100405537C (en) | 2005-12-07 | 2005-12-07 | Plasma reaction device |
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| CN1848372A true CN1848372A (en) | 2006-10-18 |
| CN100405537C CN100405537C (en) | 2008-07-23 |
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| CN102368465A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Etching chamber of dry method etching hard inorganic material substrate ICP etching machine |
| CN101922611B (en) * | 2009-06-16 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Gas delivery device and dry etching device |
| CN103811258A (en) * | 2012-11-06 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma reaction chamber |
| CN103997843A (en) * | 2013-02-17 | 2014-08-20 | 中微半导体设备(上海)有限公司 | Plasma reactor improving gas distribution |
| CN104099613A (en) * | 2013-04-03 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
| CN104746078A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and a plasma processing device |
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| CN109957761A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | Based on linear evaporator vacuum coating uniset |
| CN109957760A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | Linear vacuum plated film monomer evaporator |
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| JPH105579A (en) * | 1996-06-26 | 1998-01-13 | Mitsubishi Electric Corp | Plasma treating device |
| JP2001023959A (en) * | 1999-07-05 | 2001-01-26 | Mitsubishi Electric Corp | Plasma processing apparatus |
| US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
| JP4145457B2 (en) * | 2000-02-08 | 2008-09-03 | 信越化学工業株式会社 | Electrode plate for plasma etching equipment |
| KR100447248B1 (en) * | 2002-01-22 | 2004-09-07 | 주성엔지니어링(주) | Gas diffusion plate for use in ICP etcher |
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| CN101922611B (en) * | 2009-06-16 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Gas delivery device and dry etching device |
| CN102368465A (en) * | 2011-09-20 | 2012-03-07 | 嘉兴科民电子设备技术有限公司 | Etching chamber of dry method etching hard inorganic material substrate ICP etching machine |
| CN103811258A (en) * | 2012-11-06 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma reaction chamber |
| CN103997843A (en) * | 2013-02-17 | 2014-08-20 | 中微半导体设备(上海)有限公司 | Plasma reactor improving gas distribution |
| CN104099613A (en) * | 2013-04-03 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
| CN104099613B (en) * | 2013-04-03 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
| CN104746078A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and a plasma processing device |
| CN104746078B (en) * | 2013-12-27 | 2018-01-09 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and plasma processing device |
| CN104979249A (en) * | 2015-07-22 | 2015-10-14 | 上海华力微电子有限公司 | Gas in and out device, heat treatment machine board, and gas in and out method |
| CN109957755A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | Optics evaporation in vacuo coating machine |
| CN109957761A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | Based on linear evaporator vacuum coating uniset |
| CN109957760A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | Linear vacuum plated film monomer evaporator |
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| CN100405537C (en) | 2008-07-23 |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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