KR100266003B1 - Assistant plate for sputtering deposition - Google Patents

Assistant plate for sputtering deposition Download PDF

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KR100266003B1
KR100266003B1 KR1019970034991A KR19970034991A KR100266003B1 KR 100266003 B1 KR100266003 B1 KR 100266003B1 KR 1019970034991 A KR1019970034991 A KR 1019970034991A KR 19970034991 A KR19970034991 A KR 19970034991A KR 100266003 B1 KR100266003 B1 KR 100266003B1
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sputtering deposition
cathode
anode
isolation
directional sputtering
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KR1019970034991A
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Korean (ko)
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KR19990011770A (en
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이정원
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김영환
현대반도체주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers

Abstract

PURPOSE: A directional sputtering deposition assistant plate is provided to reduce the time consumed in exchanging isolation cells and improve the efficiency of work by forming a contact hole of various sizes and a barrier metal film at the aspect ratio. CONSTITUTION: A directional sputtering deposition assistant plate includes a chamber(108) the vacuum state of which is adjusted. A cathode(114) is formed on the top within the chamber(108) and discharges electrons. An anode(116) is separated from the cathode(114) by a given distance. An upper wafer is seated on the anode(116). A directional sputtering deposition assistant plate is installed between the cathode(114) and the anode(116) and consists of a plurality of isolation cells. Upper and lower directional sputtering deposition assistant plates(200,202) adjust the size of the isolation cells(208). The upper and lower directional sputtering deposition assistant plates(200,202) are stacked and have isolation cells(204,206) intersected to each other.

Description

격리셀의 크기가 조절되는 방향성 스퍼터링 증착 보조판Directional Sputtered Deposition Aid Plate with Adjustable Isolation Cell Size

균일하게 형성하는 방향성 스퍼터링 증착 보조판에 관한 것이다.The present invention relates to a directional sputtering deposition auxiliary plate which is uniformly formed.

일반적으로 반도체 소자가 고집적화 됨에 따라 실리콘기판에 형성되는 접촉구의 종횡비(Aspect ratio)가 커지고 이에 따라 장벽 금속막을 보다 효과적으로 형성하는 것이 요구되는 실정이다.In general, as the semiconductor devices are highly integrated, the aspect ratio of the contact holes formed on the silicon substrate is increased, and thus, it is required to form the barrier metal film more effectively.

상기 종횡비는 도 1에서 도시된 바와같이 접촉구(102)의 직경에 대한 절연층(100)의 높이비인 B'/A' 이다. 종횡비가 커지면 접촉구(102)의 직경은 작아지고 절연층(100)의 높이는 점점 높아져 접촉구(102)가 깊어진다.The aspect ratio is B '/ A' which is the height ratio of the insulating layer 100 to the diameter of the contact hole 102 as shown in FIG. As the aspect ratio increases, the diameter of the contact hole 102 decreases, and the height of the insulating layer 100 gradually increases, causing the contact hole 102 to deepen.

이렇게 종횡비가 큰 접촉구(102)는 증착 입자의 입사각도가 접촉구(102)의 수직방향에 대하여 조금만 벗어나도 접촉구(102)의 측면이 증착되므로 실리콘기판(106)상의 장벽 금속막(104) 형성이 제대로 이루어지지 않는다.The contact hole 102 having a high aspect ratio is deposited on the silicon substrate 106 because the side surface of the contact hole 102 is deposited even if the incident angle of the deposited particles deviates slightly from the vertical direction of the contact hole 102. ) Formation is not done properly.

종래 접촉구의 장벽 금속막(104)을 형성하는 방법은 화학적 기상증착법과 물리적 기상증착법을 적용하므로써 수행되나 화학적 기상증착법에 의한 접촉구(102) 형성시 실리콘기판(106)과의 계면반응에 의하여 계면이 손상되므로 주로 물리적 기상증착법인 스퍼터링(Sputtering)장치를 이용하여 접촉구(102)의 장벽 금속막(104)을 형성하는 것이 통상적이다.Conventionally, the method of forming the barrier metal film 104 of the contact hole is performed by applying the chemical vapor deposition method and the physical vapor deposition method, but when the contact hole 102 is formed by the chemical vapor deposition method, the interface by the interface reaction with the silicon substrate 106 Because of this damage, it is common to form the barrier metal film 104 of the contact hole 102 using a sputtering apparatus, which is mainly a physical vapor deposition method.

이러한 물리적 기상증착을 수행하는 종래의 스퍼터링 장치는 도 2에서 도시된 바와 같이 진공챔버(108)의 일측에 형성되어 공정가스가 주입되는 공정가스공급부(110)와, 타측에 형성되어 공정부산물이 배기되는 배기부(112)와, 내부에는 고주파 전원이 인가되어 전자가 방전되는 캐소드(CATHODE)(114)와, 상기 캐소드(114)와 일정간격으로 이격되어 설치되고 상면에 실리콘기판(106)이 안착되는 어노드(ANODE)(116)와, 상기 캐소드(114)와 어노드(116) 사이에 다수개의 격리셀(118)로이루어진 방향성 스퍼터링 증착 보조판(Collimator)(120)으로 구성된다. 상기에서 어노드(116)는 접지되어 있다.Conventional sputtering apparatus for performing the physical vapor deposition is formed on one side of the vacuum chamber 108, as shown in Figure 2, the process gas supply unit 110 is injected into the process gas, and the other side is formed by the exhaust process by-products The exhaust unit 112 is formed inside, a cathode (CATHODE) 114 is discharged by the high frequency power is applied to the inside, and the cathode 114 is spaced apart at regular intervals and the silicon substrate 106 is seated on the upper surface An anode (ANODE) 116, and a directional sputtering deposition auxiliary plate (Collimator) 120 consisting of a plurality of isolation cells 118 between the cathode 114 and the anode 116. The anode 116 is grounded above.

한편 상기 방향성 스퍼터링 증착 보조판(120)은 도 3에서 도시된 바와 같이 육각형의 홀이 다수개 배열되어 격리셀(118)을 형성하고 이러한 격리셀(118)을 통과하며 캐소드(114)에서 여러 방향으로 방출되는 금속 입자 가운데 일정 방향으로입사된 입자만이 여과되어 접촉구(102)에 의해 노출된 실리콘기판(106)에 증착되어 장벽 금속막(104)을 형성한다.Meanwhile, as shown in FIG. 3, the directional sputtering deposition auxiliary plate 120 has a plurality of hexagonal holes arranged to form an isolation cell 118, passes through the isolation cell 118, and in various directions in the cathode 114. Only particles that are incident in a predetermined direction among the emitted metal particles are filtered and deposited on the silicon substrate 106 exposed by the contact hole 102 to form the barrier metal film 104.

상기와 같은 종래의 스퍼터링 장치에 의한 증착작업은 도면을 참조하면 공정가스공급부(110)로 부터 챔버(108)내로 비활성가스인 아르곤가스(Ar)가 공급된 상태에서 고주파전원을 캐소드(114)와 어노드(112) 사이에 인가한다. 이 때, 고주파전원에 의해 높은 에너지를 갖고있는 중성의 아르곤가스가 이온과 전자로 이온화된다.In the deposition operation by the conventional sputtering apparatus as described above, referring to the drawing, the high frequency power source is connected to the cathode 114 in the state in which argon gas Ar is supplied from the process gas supply unit 110 into the chamber 108. It is applied between the anodes 112. At this time, the neutral argon gas having high energy is ionized by ions and electrons by the high frequency power source.

이렇게 고주파전원으로 가속된 전자는 분자와의 탄성충돌을 거쳐 고에너지를 얻은 다음에 분자와 비탄성충돌하여 전리,여기하여 플라즈마를 발생시키므로써 챔버(108)내의 어노드(116) 상부면에 안착된 실리콘기판(106)에 증착공정이 행해진다.The electrons accelerated by the high frequency power supply high energy through elastic collision with molecules, and then ionically collide with the molecules to generate ionization and excitation, thereby generating plasma, which is deposited on the upper surface of the anode 116 in the chamber 108. The deposition process is performed on the silicon substrate 106.

이때, 상기 플라즈마 내 반응생성물이 캐소드(114)와 어노드(116)의 사이에 형성된 방향성 스퍼터링 증착보조판(120)의격리셀(118)을 거치게 된다. 상기에서 격리셀(118)은 적합한 방향성을 갖는 증착입자들만을 통과시켜 접촉구(102) 내에양호한 단차 피복성을 갖는 장벽 금속막(104)을 형성하게 된다.In this case, the reaction product in the plasma passes through the isolation cell 118 of the directional sputtering deposition auxiliary plate 120 formed between the cathode 114 and the anode 116. In this case, the isolation cell 118 passes through only the deposition particles having suitable orientation to form a barrier metal film 104 having a good step coverage in the contact hole 102.

즉, 캐소드(114)로부터 어노드(116)에 방전되는 증착 입자는 무수히 많은 방향성을 이루므로 실리콘기판(106)의 접촉구(102)에 증착되는 장벽 금속막(104)의 단차 피복성이 열악해지는바 이를 극복하기 위하여 증착 입자를 방향성 스퍼터링증착보조판(120)의 격리셀(118)을 거치게 하므로써 단차 피복성이 열악해지는 것을 방지한다.That is, since the deposition particles discharged from the cathode 114 to the anode 116 form a myriad of directions, the step coverage of the barrier metal film 104 deposited on the contact hole 102 of the silicon substrate 106 is poor. In order to overcome this problem, the deposition particles are passed through the isolation cell 118 of the directional sputtering deposition auxiliary plate 120 to prevent deterioration of the step coverage.

그러나, 종래의 방향성 스퍼터링 증착보조판으로 다양한 크기 및 종횡비를 갖는 접촉구의 장벽 금속막을 형성하려면 각접촉구의 크기나 종횡비의 조건하에서 장벽 금속막을 형성하는데 적합한 크기의 격리셀로 이루어진 방향성 스퍼터링 증착보조판을 수시로 교환 및 설치하여야 하므로 증착작업에 소요되는 시간이 증대되고 이에따라 작업 효율이 저하되는 문제점이 발생한다.However, in order to form barrier metal films of contact holes having various sizes and aspect ratios with conventional directional sputtering deposition auxiliary plates, the directional sputtering deposition auxiliary plates made of isolation cells of sizes suitable for forming barrier metal films under the conditions of the size and aspect ratio of each contact hole are frequently exchanged. And since the time required for the deposition operation is increased because it must be installed, there is a problem that the work efficiency is lowered accordingly.

또한, 증착 입자가 여러방향에서 장벽 금속막에 입사되어 균일한 증착면을 형성하기 어려우며 이에 증착율 및 단차 피복성이 저하되는 문제점이 발생한다In addition, the deposition particles are incident on the barrier metal film in various directions, making it difficult to form a uniform deposition surface, which causes a problem in that deposition rate and step coverage are deteriorated.

본 발명의 목적은 접촉구의 크기 및 종횡비에 적합한 크기의 격리셀을 접촉구의 크기나 종횡비가 변화함에 따라 수시로교환 및 설치하지 않더라도 하나의 방향성 스퍼터링 증착 보조판으로 다양한 크기의 접촉구와 종횡비에서의 장벽 금속막을 형성하므로써 격리셀 교환에 소요되는 시간을 절약하고 작업 효율을 증대시키는데 있다.An object of the present invention is to provide a barrier metal film at various sizes of contact holes and aspect ratios with one directional sputtering deposition auxiliary plate even if the isolation cell having a size suitable for the contact hole size and aspect ratio is not replaced or installed at any time as the size or aspect ratio of the contact hole changes. This is to reduce the time required to replace the isolation cell and increase the work efficiency.

본 발명의 다른 목적은 장벽 금속막의 증착면을 형성하여 단차 피복성을 향상시키는데 있다.Another object of the present invention is to form a deposition surface of a barrier metal film to improve step coverage.

상기의 목적들을 달성하기 위한 본 발명에 따른 격리셀의 크기가 조절되는 방향성 스퍼터링 증착 보조판은 진공펌프가 일측에 연결되어 진공상태가 조성되는 챔버와, 상기 챔버내의 상부에 형성되어 전자가 방전되는 캐소드와, 상기 캐소드와일정간격으로 이격되어 형성되며 상부에 웨이퍼가 안착되는 어노드와, 상기 캐소드와 어노드 사이에 설치되며 다수개의격리셀로 이루어진 방향성 스퍼터링 증착보조판으로 구성되는 스퍼터링 장치에 있어서, 상기 방향성 스퍼터링 증착 보조판이 상·하부로 적층되며 각각의 격리셀이 상호 교차되어 격리셀의 크기가 조절되는 상·하부 방향성 스퍼터링 증착 보조판으로 구성되는 것을 특징으로 한다.In order to achieve the above objects, the directional sputtering deposition auxiliary plate in which the size of the isolation cell is adjusted according to the present invention includes a chamber in which a vacuum pump is connected to one side to form a vacuum state, and a cathode formed at the top of the chamber to discharge electrons. And a cathode formed at a predetermined interval from the cathode and having a wafer seated thereon, and a sputtering apparatus formed between the cathode and the anode, wherein the sputtering deposition auxiliary plate is formed of a plurality of isolation cells. The directional sputtering deposition auxiliary plate is stacked up and down, and each isolation cell is intersected with each other, characterized in that the upper and lower directional sputtering deposition auxiliary plate is configured to control the size of the isolation cell.

이하, 첨부된 도면을 참조하여 본 발명을 설명하겠다Hereinafter, the present invention will be described with reference to the accompanying drawings.

도 1은 일반적인 접촉구에 장벽 금속막이 형성된 것을 도시한 상태도이고,1 is a state diagram showing a barrier metal film is formed in a general contact hole,

도 2는 종래의 스퍼터링장치의 개략도이고,2 is a schematic diagram of a conventional sputtering apparatus,

도 3은 종래의 스퍼터링장치의 증착 보조판의 평면도이고,3 is a plan view of a deposition auxiliary plate of a conventional sputtering apparatus,

도 4는 본 발명의 스퍼터링장치의 개략도이고,4 is a schematic view of the sputtering apparatus of the present invention,

도 5는 본 발명의 스퍼터링장치의 증착 보조판의 평면도이다.5 is a plan view of a deposition auxiliary plate of the sputtering apparatus of the present invention.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

100 : 절연층, 102 : 접촉구,100: insulating layer, 102: contact hole,

104 : 장벽 금속막, 106 : 실리콘기판,104: barrier metal film, 106: silicon substrate,

108 : 진공챔버, 110 : 공정가스공급부,108: vacuum chamber, 110: process gas supply unit,

112 : 배기부, 114 : 캐소드,112: exhaust, 114: cathode,

116 : 어노드, 118,204,206 : 격리셀,116: anode, 118,204,206: isolation cell,

120 : 방향성 스퍼터링 증착 보조판,120: directional sputtering deposition auxiliary plate,

200 : 상부 방향성 스퍼터링 증착 보조판,200: upper directional sputtering deposition auxiliary plate,

202 : 하부 방향성 스퍼터링 증착 보조판.�/P>202: Downward Directional Sputtering Deposition Subplate.

도 4는 본 발명의 스퍼터링장치의 개략도로써 스퍼터링 증착 보조판이 상호 교차된 상태에서 장벽 금속막이 형성되는 것을 도시한다.4 is a schematic diagram of the sputtering apparatus of the present invention, showing that the barrier metal film is formed in a state where the sputtering deposition auxiliary plates are crossed with each other.

실리콘기판(106)의 접촉구((102)에 장벽 금속막(104)을 증착하는 스퍼터링 장치는 내부를 진공상태로 유지하며 공정가스공급부에서 공정가스가 주입되는 진공챔버(108)내에 형성된다.A sputtering apparatus for depositing the barrier metal film 104 in the contact hole 102 of the silicon substrate 106 is formed in the vacuum chamber 108 which keeps the inside vacuum and injects the process gas from the process gas supply unit.

즉, 상기 진공챔버(108)의 내부 상측에는 전원이 인가되어 전자가 방전되는 캐소드(114)가 형성되고 상기 캐소드(114)의하측으로 임의간격만큼 이격되면 상부면에 실리콘기판(106)을 안착하는 어노드(116)가 형성된다.That is, a cathode 114 is formed on the inside of the vacuum chamber 108 to supply electric power to discharge electrons, and when the silicon substrate 106 is seated on the upper surface when the cathode 114 is spaced apart by a predetermined distance below the cathode 114. An anode 116 is formed.

상기 캐소드(114)와 어노드(116)의 사이에는 상,하로 적층되어 격리셀(204)(206)들이 상호 교차되는 상·하부 방향성 스퍼터링 증착 보조판(200)(202)이 형성된다.The upper and lower directional sputtering deposition auxiliary plates 200 and 202 are stacked between the cathode 114 and the anode 116 so that the isolation cells 204 and 206 cross each other.

이러한 상·하부 방향성 스퍼터링 증착 보조판(200)(202)은 상부 또는 하부 중 적어도 하나의 스퍼터링 증착 보조판이 이동하면서 각각에 형성된 격리셀(204)(206)들이 상호 교차되어 다양한 크기의 격리셀(208)로 조합된다.The upper and lower directional sputtering deposition auxiliary plates 200 and 202 are separated from each other by isolation cells 204 and 206 formed in each of the upper and lower sputtering deposition auxiliary plates, which are formed to cross each other. ) Is combined.

이렇게 증착하고자 하는 장벽 금속막(104)의 크기 및 종횡비에 따라 격리셀(204)(206)들의 크기가 적절하게 조절되어 접촉구(102)에 증착되는 스퍼터링 입자 크기조절된 격리셀(208)을 통과하며 일정 방향의 스퍼터링 입자만이 필터링(Filtering)되어 접촉구(102)로 유입되므로써 장벽 금속막(104)이 균일하게 형성된다.According to the size and aspect ratio of the barrier metal film 104 to be deposited, the size of the isolation cells 204 and 206 is appropriately adjusted so that the sputtered particle sized isolation cell 208 deposited on the contact hole 102 is formed. Only the sputtered particles passing through and passing in the predetermined direction are filtered to flow into the contact hole 102, thereby forming the barrier metal film 104 uniformly.

이때 상기 상·하부 방향성 스퍼터링 증착 보조판(200)(202)의 격리셀(204)(206)들은 크기가 동일하거나 또는 각각 다른크기로 형성되되 상호 교차되기 전과 교차된 후의 격리셀(208) 수가 2배이상이어야 한다.In this case, the isolation cells 204 and 206 of the upper and lower directional sputtering deposition auxiliary plates 200 and 202 have the same size or different sizes, but the number of the isolation cells 208 before and after they cross each other. It must be at least twice.

본 발명의 상·하부 방향성 스퍼터링 증착 보조판에 의한 장벽 금속막의 형성과정을 알아보면 다음과 같다.The formation process of the barrier metal film by the upper and lower directional sputtering deposition auxiliary plate of the present invention is as follows.

도면을 참조하면 진공챔버(108)내의 상부에 형성된 캐소드(114)에서 웨이퍼(100)가 안착된 어노드(116)로 전자가 방전되어 가스와 충돌하므로써 증착 입자화된다.Referring to the drawings, electrons are discharged from the cathode 114 formed on the upper portion of the vacuum chamber 108 to the anode 116 on which the wafer 100 is seated, thereby colliding with gas, thereby depositing particles.

이때 상기 캐소드(114)와 어노드(116) 사이에 상,하부로 적층되어 형성된 상·하부 방향성 스퍼터링 증착 보조판(200)(202) 중 적어도 하나의 방향성 스퍼터링 증착 보조판을 이동시켜 격리셀(204)(206)들의 크기가 적절하게 조절된다.At this time, the isolation cell 204 by moving the directional sputtering deposition auxiliary plate of at least one of the upper and lower directional sputtering deposition auxiliary plates 200 and 202 formed by being stacked up and down between the cathode 114 and the anode 116. The sizes of 206 are appropriately adjusted.

상기 격리셀(208)의 크기는 장벽 금속막(104)이 형성되는 접촉구(102)의 종횡비에 따라 또는 접촉구(102)의 크기에 따라적절하게 조절되어야 함은 물론이다.The size of the isolation cell 208 should be appropriately adjusted according to the aspect ratio of the contact hole 102 on which the barrier metal film 104 is formed or the size of the contact hole 102.

이렇게 크기가 조절된 상·하부 방향성 스퍼터링 증착 보조판(202)(204)의 격리셀(208)에 증착 입자가 유입되고 상호 교차되며 일정한 크기를 형성하는 격리셀(208)을 통과하며 종횡비나 또는 접촉구(102)의 크기에 적합한 방향성을 갖는 증착입자만이 장벽 금속막(104)에 도달하여 증착된다.The deposition particles are introduced into the isolation cells 208 of the sized upper and lower directional sputtering deposition auxiliary plates 202 and 204 and are intersected with each other and pass through the isolation cells 208 which form a constant size. Only deposited particles having a directionality suitable for the size of the sphere 102 reach the barrier metal film 104 and are deposited.

따라서 장벽 금속막(104)에 동일한 방향으로 입사된 증착 입자가 순차적으로 증착되면서 균일한 장벽 금속막(104)을 형성한다Therefore, the deposition particles incident on the barrier metal film 104 in the same direction are sequentially deposited to form a uniform barrier metal film 104.

도 4는 본 발명의 스퍼터링장치의 개략도로써 스퍼터링 증착 보조판이 상호 교차된 상태에서 장벽 금속막이 형성되는 것을 도시한다.4 is a schematic diagram of the sputtering apparatus of the present invention, showing that the barrier metal film is formed in a state where the sputtering deposition auxiliary plates are crossed with each other.

실리콘기판(106)의 접촉구((102)에 장벽 금속막(104)을 증착하는 스퍼터링 장치는 내부를 진공상태로 유지하며 공정가스공급부에서 공정가스가 주입되는 진공챔버(108)내에 형성된다.A sputtering apparatus for depositing the barrier metal film 104 in the contact hole 102 of the silicon substrate 106 is formed in the vacuum chamber 108 in which the process gas is injected from the process gas supply unit while keeping the interior in a vacuum state.

즉, 상기 진공챔버(108)의 내부 상측에는 전원이 인가되어 전자가 방전되는 캐소드(114)가 형성되고 상기 캐소드(114)의하측으로 임의간격만큼 이격되면 상부면에 실리콘기판(106)을 안착하는 어노드(116)가 형성된다.That is, a cathode 114 is formed on the inside of the vacuum chamber 108 to supply electric power to discharge electrons, and when the silicon substrate 106 is seated on the upper surface when the cathode 114 is spaced apart by a predetermined distance below the cathode 114. An anode 116 is formed.

상기 캐소드(114)와 어노드(116)의 사이에는 상,하로 적층되어 격리셀(204)(206)들이 상호 교차되는 상·하부 방향성 스퍼터링 증착 보조판(200)(202)이 형성된다.The upper and lower directional sputtering deposition auxiliary plates 200 and 202 are stacked between the cathode 114 and the anode 116 so that the isolation cells 204 and 206 cross each other.

이러한 상·하부 방향성 스퍼터링 증착 보조판(200)(202)은 상부 또는 하부 중 적어도 하나의 스퍼터링 증착 보조판이 이동하면서 각각에 형성된 격리셀(204)(206)들이 상호 교차되어 다양한 크기의 격리셀(208)로 조합된다.The upper and lower directional sputtering deposition auxiliary plates 200 and 202 are separated from each other by isolation cells 204 and 206 formed in each of the upper and lower sputtering deposition auxiliary plates, which are formed to cross each other. ) Is combined.

이렇게 증착하고자 하는 장벽 금속막(104)의 크기 및 종횡비에 따라 격리셀(204)(206)들의 크기가 적절하게 조절되어 접촉구(102)에 증착되는 스퍼터링 입자 크기조절된 격리셀(208)을 통과하며 일정 방향의 스퍼터링 입자만이 필터링(Filtering)되어 접촉구(102)로 유입되므로써 장벽 금속막(104)이 균일하게 형성된다.According to the size and aspect ratio of the barrier metal film 104 to be deposited, the size of the isolation cells 204 and 206 is appropriately adjusted so that the sputtered particle sized isolation cell 208 deposited on the contact hole 102 is formed. Only the sputtered particles passing through and passing in the predetermined direction are filtered to flow into the contact hole 102, thereby forming the barrier metal film 104 uniformly.

이때 상기 상·하부 방향성 스퍼터링 증착 보조판(200)(202)의 격리셀(204)(206)들은 크기가 동일하거나 또는 각각 다른크기로 형성되되 상호 교차되기 전과 교차된 후의 격리셀(208) 수가 2배이상이어야 한다.In this case, the isolation cells 204 and 206 of the upper and lower directional sputtering deposition auxiliary plates 200 and 202 have the same size or different sizes, but the number of the isolation cells 208 before and after they cross each other. It must be at least twice.

본 발명의 상·하부 방향성 스퍼터링 증착 보조판에 의한 장벽 금속막의 형성과정을 알아보면 다음과 같다.The formation process of the barrier metal film by the upper and lower directional sputtering deposition auxiliary plate of the present invention is as follows.

도면을 참조하면 진공챔버(108)내의 상부에 형성된 캐소드(114)에서 웨이퍼(100)가 안착된 어노드(116)로 전자가 방전되어 가스와 충돌하므로써 증착 입자화된다.Referring to the drawings, electrons are discharged from the cathode 114 formed on the upper portion of the vacuum chamber 108 to the anode 116 on which the wafer 100 is seated, thereby colliding with gas, thereby depositing particles.

이때 상기 캐소드(114)와 어노드(116) 사이에 상,하부로 적층되어 형성된 상·하부 방향성 스퍼터링 증착 보조판(200)(202) 중 적어도 하나의 방향성 스퍼터링 증착 보조판을 이동시켜 격리셀(204)(206)들의 크기가 적절하게 조절된다.At this time, the isolation cell 204 by moving the directional sputtering deposition auxiliary plate of at least one of the upper and lower directional sputtering deposition auxiliary plates 200 and 202 formed by being stacked up and down between the cathode 114 and the anode 116. The sizes of 206 are appropriately adjusted.

상기 격리셀(208)의 크기는 장벽 금속막(104)이 형성되는 접촉구(102)의 종횡비에 따라 또는 접촉구(102)의 크기에 따라적절하게 조절되어야 함은 물론이다.The size of the isolation cell 208 should be appropriately adjusted according to the aspect ratio of the contact hole 102 on which the barrier metal film 104 is formed or the size of the contact hole 102.

이렇게 크기가 조절된 상·하부 방향성 스퍼터링 증착 보조판(202)(204)의 격리셀(208)에 증착 입자가 유입되고 상호 교차되며 일정한 크기를 형성하는 격리셀(208)을 통과하며 종횡비나 또는 접촉구(102)의 크기에 적합한 방향성을 갖는 증착입자만이 장벽 금속막(104)에 도달하여 증착된다.The deposition particles are introduced into the isolation cells 208 of the sized upper and lower directional sputtering deposition auxiliary plates 202 and 204 and are intersected with each other and pass through the isolation cells 208 which form a constant size. Only deposited particles having a directionality suitable for the size of the sphere 102 reach the barrier metal film 104 and are deposited.

따라서 장벽 금속막(104)에 동일한 방향으로 입사된 증착 입자가 순차적으로 증착되면서 균일한 장벽 금속막(104)을 형성한다Therefore, the deposition particles incident on the barrier metal film 104 in the same direction are sequentially deposited to form a uniform barrier metal film 104.

Claims (2)

진공상태가 조정되는 챔버(108)와, 상기 챔버(108)내의 상부에 형성되어 전자가 방전되는 캐소드(114)와,상기 캐소드(114)와 일정간격으로 이격되어 형성되며 상부 웨이퍼(100)가 안착되는 어노드(116)와, 상기 캐소드(114)와어노드(116)사이에 설치되며 다수개의 격리셀(118)로 이루어진 방향성 스퍼터링 증착보조판(120)으로 구성되는 스퍼터링장치에 있어서,The chamber 108 in which the vacuum state is adjusted, the cathode 114 formed in the upper portion of the chamber 108 to discharge electrons, and the upper wafer 100 are formed to be spaced apart from the cathode 114 at regular intervals. In the sputtering device is composed of the anode 116 is seated, the directional sputtering deposition auxiliary plate 120 is provided between the cathode 114 and the anode 116 and composed of a plurality of isolation cells 118, 상,하부로 적층되며 각각의 격리셀(204)(206)들이 상호 교차되어 격리셀(208)의 크기가 조절되는 상·하부 방향성 스퍼터링 증착 보조판(200)(202)을 구비하는 것을 특징으로 하는 격리셀의 크기가 조절되는 방향성 스퍼터링 증착 보조판.It is characterized in that it comprises a top and bottom directional sputtering deposition auxiliary plate (200, 202) is stacked in the upper and lower, and each of the isolation cells 204, 206 are intersected with each other to control the size of the isolation cell (208) A directional sputtered deposition plate with an adjustable isolation cell size. 청구항 1에 있어서,The method according to claim 1, 상기 상·하부 방향성 스퍼터링 증착 보조판(200)(202)은 상호 교차된 후의 격리셀(208) 수가 교차되기 전의 격리셀(204)(206) 수보다 적어도 2배이상인 것을 특징으로 하는 격리셀의 크기가 조절되는 방향성 스퍼터링 증착 보조판The upper and lower directional sputtering deposition auxiliary plates 200 and 202 are at least twice as large as the number of the isolation cells 204 and 206 before they cross each other. Sputtered deposition baffles with adjustable
KR1019970034991A 1997-07-25 1997-07-25 Assistant plate for sputtering deposition KR100266003B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243181A (en) * 1992-03-02 1993-09-21 Fujitsu Ltd Sputtering device
JPH07335553A (en) * 1994-06-08 1995-12-22 Tel Varian Ltd Treatment device and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243181A (en) * 1992-03-02 1993-09-21 Fujitsu Ltd Sputtering device
JPH07335553A (en) * 1994-06-08 1995-12-22 Tel Varian Ltd Treatment device and method

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