KR100803825B1 - Plasma etching system - Google Patents

Abstract

The present invention relates to a type of plasma etching system, comprising a closed plasma chamber, wherein a composite gas is injected into the plasma chamber, and one first electrode plate and a second electrode plate are respectively installed at both sides thereof. The first electrode plate and the second electrode plate are respectively connected to the electricity of the first power supply terminal and the second power supply terminal, and the plasma chamber is provided with parallel conductor plates separately grounded between the two electrode plates, and the plasma chamber The carrier is further installed therein, and the substrate to be etched is placed on the carrier. The two power supply units apply different voltages to the two electrode plates, and the two electrode plates discharge the composite gas, and then dissociate the plasma. The plasma gas molecules are converted into plasma gas molecules which cause irregular collisions inside the chamber. Through the induction of the plate, through the plurality of sieve holes provided in the conductor plate, the sputtering is made uniformly toward the thin film on the surface of the substrate, thereby performing plasma etching treatment on the surface of the substrate, the common between the conductor plate and the substrate By using this distance, the plasma gas molecules can be sputtered relatively evenly on the surface of the substrate, and the surface of the substrate can be relatively evenly etched. Furthermore, the conventional plasma etching system can be used to etch substrates of large dimensions. In this case, the strength of the electric field is not uniform, the concentration distribution of the plasma gas molecules is uneven, it is to effectively solve the defect that the etching is performed unevenly.

Plasma, etching, chamber, composite gas, electrode plate

Description

Plasma Etching System {PLASMA ETCHING SYSTEM}

1 is a structural diagram of a plasma etching system of one of the prior art.

2 is a plasma etching situation of one of the prior art.

3 is a plasma etching solution situation diagram of the prior art.

4 is a structural diagram of a plasma etching system which is a kind of the present invention.

5 is a structural diagram of an embodiment of the present invention.

6 is an explanatory view of the arrangement of sieve holes in another embodiment of the present invention.

8 is an explanatory view of the arrangement of sieve holes in another embodiment of the present invention.

8A is an arrangement explanatory diagram showing a shape of a sieve hole distribution in a vertical line.

It is an arrangement explanatory drawing which shows the sieve hole distribution shape of a horizontal line.

8C is an arrangement explanatory diagram showing vertical and horizontal composite body hole distribution shapes.

FIG. 8D is an arrangement explanatory diagram showing the shape of a sieve hole distribution in the form of a rectangle enclosed along four circumferences of the conductor plate.

8E is an arrangement explanatory diagram showing a circular sieve hole distribution shape.

8F is an arrangement explanatory diagram showing a sieve hole distribution shape in the form of a spider web.

9 is a flowchart of an embodiment of the present invention.

10 is a flow chart of another embodiment of the present invention.

Fig. 11A is a comparison diagram of the “plasma chamber air pressure” of the present invention and the prior art.

Fig. 11B is a comparison chart of the “composite gas flow rate ratio” between the present invention and the prior art.

Fig. 11C is a comparative view of the "distance between substrate and electrode" of the present invention and the prior art.

<Explanation of symbols for the main parts of the drawings>

1: plasma chamber 10: first electrode plate

11: first power supply 12: first insulating layer

13: gas outlet 15: detection unit

20: second electrode plate 21: second power supply

30: conductor plate 31: sieve hole

32: ground terminal 40: carrier

42: substrate 50: gas control module

51: gas transport pipe 52: control unit

53: gas 60: exhaust port

61: exhaust pump 100: plasma gas molecules

110; Plasma source zone 120: plasma bias zone

420: thin film

The present invention relates to a plasma etching system, and more particularly, between a first electrode plate and a second electrode plate in a kind of closed plasma chamber, a grounded conductor plate is mounted in parallel, so that the conductor plate is provided with the first plate. Plasma gas molecules are subjected to plasma etching on the surface of the substrate by inducing the plasma gas molecules generated after discharge of the first electrode plate and the second electrode plate to be sputtered on the surface of the substrate. This is to solve the defect that cannot be etched evenly.

Our lives are now entering the information age where the electronics industry is vigorously developing. Various multimedia electronics are rapidly replaced with new ones, which certainly provide more choices for human entertainment and leisure life. With the continuous research and efforts of various electronic science and technology, screen and display devices, which are related electronic products, are constantly progressing, and also to meet the needs of future users for larger display panels, or to create profits. The goal is to make it more cost-effective.

In general, the size of an LCD flat panel display (FPD) is typically 1,000-1,200 mm x 1,200-1,500 mm, and it is not long before the glass substrate in the LCD flat display is likely to exceed one side in the range of 2,500 mm. In the manufacturing technology of the LCD flat panel display, referring to FIG. 1, one of the steps is a thin film (eg, a surface of the glass substrate 300) between two electrodes 100 and 200 using a kind of plasma gas 400. For example, a plasma etching process may be performed on silicon nitride (abbreviated SiN) or amorphous silicon (abbreviated aSi). However, during the plasma etching process of the manufacturer, there are a lot of bottlenecks and constraints in the process. The reason is that in the case of the glass substrate 300 having a large size, the range in which the plasma gas 400 is etched by the large glass substrate 300 is too wide, so that each molecule in the plasma gas 400 may have the large glass substrate 300. It is not possible to match the degree of hitting the middle and both ends of the) and the plasma gas 400 can not be etched evenly on the large glass substrate 300. In other words, referring to FIG. 2, when the plasma gas 400 is positioned between two electrodes (100 and 200) having different voltages (or frequencies), resistance generated due to the concentration of the center thereof is It is larger than the resistance generated at both ends. Therefore, the molecules in the plasma gas 400 cannot maintain a constant concentration between the two electrodes 100 and 200, and the molecules of the plasma gas 400 proceed to any position on the surface of the glass substrate 300. The effect of plasma etching is also inconsistent. In addition, if the plasma etching processing time to be carried out on the glass substrate 300 is increased, and the concentration of the plasma gas 400 is relatively weak to enhance the plasma etching process effect on the glass substrate 300, First, a portion where the concentration of the plasma gas 400 is relatively strong may corrode, thereby ruining an etching plan originally intended for the glass substrate 300.

Thus, current LCD flat panel displays already face one big challenge for large-size glass substrate manufacturing technology, and in general, the conventional solution is to use the principle that the gap and the impedance are directly proportional. Referring to FIG. 3, the plasma is reduced as much as possible by reducing the distance between one electrode 100 and both ends of the glass substrate 300 or by increasing the distance between the electrode 100 and the center of the glass substrate 300. The resistance of the gas 400 generated by the concentration of the centers of the two electrodes 100 and 200 is approached to the resistance generated by the plasma gas 400 at both ends of the two electrodes 100 and 200, thereby providing the glass substrate 300. ) Is a method of obtaining the correspondence of the etching efficiency of the plasma gas 400 with respect to. However, this method must first bend the electrode 100 so that the center and both ends of the electrode 100 to form a different distance from the glass substrate 300. However, the curvature required to bend the electrode 100 is still difficult to concretely realize.

Therefore, the manufacturer must consider the concentration of the plasma gas used for the plasma etching treatment in this part, and maintain the consistency of the efficiency of the plasma gas is etched on the glass substrate by using the same concentration of the plasma gas. Should do it. Therefore, as can be seen from the above, it is very inconvenient to produce a plasma etching process to the glass substrate while maintaining the same concentration of the plasma gas while maintaining a constant etching rate in the production and manufacturing process. Therefore, the above problem is an important problem to be solved in the present invention.

In view of the many problems described above, the present inventors have finally developed a kind of "plasma etching system" of the present inventors through long research efforts and experiments, and hopes to contribute to society through the present invention.

SUMMARY OF THE INVENTION An object of the present invention is to provide a kind of plasma etching system, in which a first electrode plate and a second electrode plate are installed inside a closed plasma chamber, and the first electrode plate and the second electrode plate are respectively provided with a first power source. The plasma chamber is placed between the first electrode plate and the second electrode plate in connection with electricity of the supply unit and the second power supply unit, and one conductor plate is connected in parallel so that the conductor plate is electrically connected to the ground terminal. It is connected to each other, and the conductor plate is connected to the electricity of the first electrode plate and the second electrode plate, respectively, and one carrier is installed in a portion adjacent to the second electrode plate in the plasma chamber, When the substrate to be etched is placed, and the composite gas is injected into the plasma etching chamber, the first power supply unit and the second power supply unit are disposed at the two power sources. After discharging by applying voltages of different sizes to the plates, the two electrode plates dissociate the composite gas and convert into highly active plasma gas molecules, causing the plasma gas molecules to collide irregularly in the plasma chamber. Since the conductor plate has the same distance from the substrate as opposed to an arbitrary position of the substrate, the conductor plate not only induces the plasma gas molecules to pass through, but also the plasma etching while being uniformly sputtered on the surface of the substrate. The processing is performed to maintain the consistency when the plasma gas molecules are subjected to the plasma etching process to any position of the substrate, and to prevent the uneven etching process on the substrate.

Another object of the present invention is to design a sieve hole of the conductor plate of different sizes, and to place in the required position of the conductor plate, so that the plasma gas molecules pass through sieve holes of different sizes By allowing different flow rates to occur, the plasma gas is controlled to a predetermined concentration so that the plasma gas molecules are sputtered on the substrate surface to be etched.

It is still another object of the present invention to utilize an arrangement state of different sieve pore distribution densities of the conductor plate, in order to enhance or weaken the etching of the sieve hole in a densely or loosely arranged state. By placing it at the required position of the plasma gas molecules, the distribution of the sieve holes in a dense or loose arrangement allows the corresponding quantity to penetrate the different positions of the conductor plate to be effectively controlled, so that the plasma gas is The plasma gas molecules are sputtered on the surface of the substrate by controlling with.

In order to help recognition and understanding of the objects, technical features and effects of the present invention, it will be described in detail with reference to the following embodiments and the accompanying drawings.

Plasma refers to the generation of active materials such as electrons, ions, and free radicals by energizing excited gas molecules with energy. The electrons are accelerated due to the potential difference in the electric field. The electrons are excited to collide with other gas molecules to accelerate energy, and the impacted atoms are excited again to emit electrons. In this circulation, the plasma process is simultaneously present in the electrons, ions, free groups, and heavy molecules, which is called a plasma state. And basically, the plasma gas we are talking about consists of a gas that is partially dissociated and particles having the same amount of positive and negative charges, and the gas contained therein has high activity. It is formed by the driving of the external electric field, and also glow discharge (Glow Discharge) phenomenon occurs.

However, the degree of dissociation of the etching plasma gas is relatively low, and is between 0.0001 and 0.1, and the plasma gas is formed by direct current (DC) bias or alternating frequency (RF) bias or electric field. There are two ways. One is an electron that is generated after the molecule or atom is dissociated, and the other is a secondary electron that is generated by the collision of ions. The electron source of plasma gas generated under a direct current (DC) electric field is mainly secondary electrons, and the electron source of plasma generated under an alternating frequency (RF) electric field is mainly electrons generated after dissociation of molecules or atoms. Among them, in the case of a frequency discharge (RF Discharge), since most electrons are operated at a high frequency, there is not enough time to move to the positive electrode in a half cycle. Therefore, these electrons may collide with gas molecules while vibrating between electrodes, and the lower limit of vibration frequency required for frequency discharge is determined by factors such as distance between electrodes, pressure, magnitude of frequency field amplitude, and dissociation potential energy of gas molecules. do.

The present invention is a kind of plasma etching system, with reference to Figures 4 and 5, which includes a closed plasma etching chamber (1), the composite gas is injected into the plasma chamber (1) First and second electrode plates (Source Electrode) 10 and second electrode plates (Bias Electrode) 20 are respectively installed on the upper and bottom portions thereof, and the first electrode plate 10 and the second electrode plate are respectively provided. 20 is connected to electricity of the first power supply 11 and the second power supply 21 (eg, an AC frequency network, RF network), respectively. In the plasma chamber 1, one conductor plate 30 is separately installed between the two electrode plates 10 and 20, and the conductor plate 30 is connected to a ground 32. Electrically connected. In the plasma chamber 1, a carrier 40 is further installed at a position adjacent to the second electrode plate 20, and the substrate 43 to be etched in the carrier 40 (for example, For example, a glass substrate is placed. When the two power supply units 11 and 21 provide different voltages to the two electrode plates 10 and 20, respectively, and the two electrode plates 10 and 20 are discharged, the discharge action dissociates the composite gas ( By dissociation reaction, the plasma 100 is converted into highly active plasma gas 100. In the plasma gas molecule 100, an irregular collision occurs in the plasma chamber 1, between the first electrode plate 10 and the conductor plate 30 through the induction of the conductor plate 30. The plasma gas molecules 100 to be distributed are a thin film 420 (eg, silicon nitride (abbreviated as SiN) applied to the surface of the substrate 42 through a plurality of sieve holes 31 disposed in the conductor plate 30). Or sputtering on amorphous silicon (abbreviated a-Si)) to perform plasma etching on the thin film 420. As such, when the size and distribution density of the sieve hole 31 on the conductor plate 30 are properly designed, the plasma gas molecules 100 effectively control the corresponding quantity of water penetrating at different positions of the conductor plate 30. And by controlling a common distance between the conductor plate 30 and the substrate 42, the plasma gas molecules 100 can be sputtered relatively evenly onto the substrate 42 surface (ie, the thin film 420). Therefore, the surface of the substrate 42 has a relatively even etching effect, and when etching the substrate 42 having a large dimension by the conventional plasma etching system, the plasma gas molecules 100 due to the uneven strength of the electric field It is possible to effectively solve the disadvantage that the etching is not evenly distributed because of the uneven distribution of concentration.

Among the most preferred embodiments of the present invention, referring back to FIG. 5, the plasma chamber 1 is connected to a process gas panel 50, and the first surface of the plasma chamber 1 is formed on the surface of the plasma chamber 1. A plurality of gas feeders 13 penetrates a portion adjacent to the electrode plate 10. In the gas control module 50, a plurality of gas transport pipes 51 are connected to the gas outlet 13 so that a plurality of different kinds of gases 53, for example, neon, Ne, Inert gases such as xenon (Xe) and argon (Ar) are emitted. The gas transport pipe 51 is provided with one control unit (Mass Flow Controller) 52 so as to correspond to the different gas 53, the control unit 52 is the flow rate of the predetermined speed (速 率) When the gases 53 are mixed, the gas is transported to the plasma chamber 1 through the gas outlet 13 to form a complex gas.

In addition, at least one exhaust port 60 is installed at a portion of the surface of the plasma chamber 1 adjacent to the second electrode plate 20 so that one exhaust pump 61 can move to each exhaust port 60. When the exhaust pumps 61 are opened, waste generated after the plasma gas molecules 100 are plasma-etched to the substrate 42 in the plasma chamber 1 is outside the plasma chamber 1. At the same time, each exhaust pump 61 also discharges the air in the plasma chamber 1, so that the plasma chamber 1 can maintain one basic pressure.

In the above embodiment, referring again to FIGS. 4 and 5, one detection unit (for example, an optical emission endpoint detection system) is located on one side of the plasma chamber 1 opposite the plasma gas formation region. ) 15 is installed, and the detection unit 15 may identify and detect a plasma etching process that proceeds to the substrate 42. When the plasma chamber 1 performs a plasma etching process on the substrate 42, the detection unit 15 is characterized by the characteristic of the plasma gas generated in the plasma chamber 1 (for example, the wavelength of the generated light wave) Wavelength)) to identify whether the concentration of plasma gas is in compliance with the standard.

In addition, the two electrode plates 10 and 20 are all made of one conductor material, and both of the two electrode plates 10 and 20 may be isolated from electricity on the outside of one surface of the two electrode plates 10 and 20 that are not opposed to the conductor plate 30. The first insulating layer 12 may be coated, and the two first insulating layers 12 may prevent the plasma gas molecules 100 from sputtering while colliding with most of the areas of the two electrodes. In addition, the substrate 42 reduces contamination during the plasma etching process. The first insulating layer 12 is coated on the surfaces of most of the two electrodes so that the first insulating layer 12 is covered when the first power supply 11 and the second power supply 21 are discharged. To prevent power from dissipating. The carrier 40 is electrically connected to the second electrode plate 20, and plasma etched on the thin film 420 of the substrate 42 to transfer power emitted from the second power supply 21. Proceed with processing.

The sieve hole 31 is used to guide the plasma gas molecules 100 in the conductor plate 30, and when the plasma gas molecules 100 collide irregularly in the plasma chamber 1, the sieves The plasma etching process is performed toward the substrate 42 through the hole 31. However, when the plasma gas molecule 100 is sputtered on the surface of the substrate 42 and the plasma etching process is performed, if the microscopic gas is still unevenly fine or the partial etching of the surface of the substrate 42 is enhanced. If desired (overetch), the manufacturer can change the design of the sieve hole 31 on the conductor plate 30. Therefore, in still another embodiment of the present invention, referring to FIGS. 5 and 6, a sieve hole 31 having a different size is disposed in the conductor plate 30 so that the size of the sieve hole 31 is a conductor plate ( And gradually increased toward the central region of the conductor plate 30 from the four circumferences of 30). Since the size of the sieve hole 31 is directly proportional to the flow rate of the plasma gas molecule 100 passing through the sieve hole 31, the plasma gas molecules 100 have different sieve holes 31 having different sizes. Can be controlled to generate different flow rates through The present invention is not limited to the arrangement position of the sieve hole 31 of the conductor plate 30, and can be arranged in a corresponding arrangement manner according to the needs of the actual etching situation of the substrate 42 itself.

In another embodiment of the present invention, referring to FIGS. 5 and 7, a sieve hole 31 having a different arrangement density is disposed in the conductor plate 30 so that the density at which the sieve hole 31 is distributed is a conductor plate. From four perimeters of 30 it was gradually increased toward the central region of the conductor plate 30. Since the density in which the sieve hole 31 is distributed in the conductor plate 30 is in direct proportion to the etching strength and weakness of the substrate 42 of the plasma gas molecule passing through the conductor plate 30, the plasma gas molecule ( While the distribution of the sieve holes 31 flows through a dense or loose arrangement, the corresponding quantity of the plasma gas molecules 100 passing through different positions of the conductor plate 30 is effectively controlled, and the plasma gas molecules 100 can be set to sputter on substrate surface 42.

The present invention is not limited to the position where the sieve hole 31 in the above embodiment is arranged on the conductor plate 30, and the manufacturer needs the actual etching to perform plasma etching on any position on the surface of the substrate 42. Accordingly, the density distribution of the sieve hole 31 in the conductor plate 30 can be strengthened. The arrangement distribution of the sieve holes 31 which may appear in the conductor plate 30 is as follows:

1. Sieve Holes 31 of Vertical Lines As a vertical arrangement, as shown in FIG. 8A, the sieve holes 31 are arranged in the conductor plate 30 in a plurality of vertical lines.

2. Sieve Hole 31 of Horizontal Line As a horizontal arrangement, as shown in FIG. 8B, the sieve hole 31 is arranged in the conductor plate 30 in a plurality of horizontal lines.

3. Skewed Arrangment of Vertical and Horizontal Composite Sieve Holes 31 As shown in FIG. 8C, the sieve apertures 31 are arranged in a plurality of horizontal and vertical lines in the conductor plate 30. do.

4. Square Arrangment surrounding the four circumferences of the conductor plate 30 (Square Arrangment), as shown in FIG. 8D, the conductor plate 30 in one rectangular form along the four circumferences. ) Is arranged.

5. Circular Sieve 31 The Circular Arrangment, as shown in FIG. 8E, the sieve aperture 31 is arranged in the conductor plate 30 in a circular form.

6. Spider Web Arrangment, as shown in FIG. 8F, the sieve hole 31 is arranged in the conductor plate 30 in the form of one spider web.

Referring again to FIGS. 5 and 8F, the cobweb-like arrangement method gradually increases the arrangement density of the sieve holes 31 from four circumferences of the conductor plate 30 toward the center, that is, the conductor plate ( A relatively compact sieve hole 31 is provided at the central position of 30, and four circumferences far from the central position in the conductor plate 30, i.e., a relatively loose sieve hole 31, are provided. When the plasma gas molecule 100 passes through the conductor plate 30 toward the substrate 42 in a direction opposite to the conductor plate 30, the plasma gas molecule 100 is centered on the conductor plate 30. When placed in position and the arrangement passes through a relatively compact sieve hole 31, the flow rate of the plasma gas molecules 100 is concentrated, so that the degree of plasma etching treatment can be enhanced in the corresponding region of the substrate 42. have. When the plasma gas molecules 100 are positioned around four of the conductor plates 30 and pass through the sieve holes 31 having a relatively loose arrangement, the flow rate of the plasma gas molecules 100 is lowered, so that the substrate ( The degree of plasma etching treatment for the corresponding zone of 42) is gentle. As such, the plasma gas molecules 100 may selectively perform an intense or relaxed plasma etching process on a specific region of the substrate 42.

When the plasma etching process is performed in the plasma chamber 1 according to the present invention, referring to FIG. 5, the first power supply 11 and the second power supply 21 are two AC frequency sources (RF Network), respectively. The detection unit 15 is an optical emission endpoint detection system in which one plasma source region 110 is formed between the conductor plate 30 in the first electrode plate 10. In addition, one plasma bias region 120 is formed between the second electrode plate 20 in the conductor plate 30. In this way, the substrate 42 to be processed in the plasma chamber 1 is placed on the carrier 40, and the carrier 40 and the substrate 42 are sent to the plasma chamber 1, thereby providing the first electrode. After confirming that the plate 10, the second electrode plate 20 and the conductor plate 30 have already been installed in the plasma etching chamber, as shown in FIG. 9, the plasma etching process is performed in the following steps. You will start the process:

(101) The pressure is applied using the exhaust pump 61 such that the plasma chamber 1 achieves one basic pressure (between 0.001 torr and 1.5 torr).

The control unit 52 mixes the gases 53 in the gas control module 50 to be a composite gas at a constant flow rate and controls the gas 53 to flow into the plasma chamber 1.

(103) The exhaust pump 61 is used again to apply pressure so that the plasma chamber 1 achieves one set pressure (0.005 to 15 torr).

The two AC frequency sources discharge two different frequency voltages to the first electrode plate 10 and the second electrode plate 20 at a frequency of 13.56 MHz (100 Watts). Watt) ~ 100 kilowatts).

The composite gas starts to dissociate into the plasma gas molecule 100 due to the discharge of the two frequency voltages, the composite gas in the plasma source region 110 and the plasma bias region 120.

(106) The plasma gas molecules 100 start irregular collisions inside the plasma source region 110 and the plasma bias region 120.

The plasma gas molecule 100 passing through the conductor plate 30 performs a plasma etching process on the surface of the substrate 42.

(108) It is determined whether the light emission end point detection unit has reached the end point of the plasma etching according to the plasma etching process detected by the plasma gas molecule 100, and if so, (109) Proceed to step, otherwise, return to step 107.

The two AC frequency sources stop discharging the first electrode plate 10 and the second electrode plate 20.

An exhaust pump 61 restores the basic pressure with respect to the plasma chamber 1.

(111) The substrate 42 on the carrier 40 is removed to complete the plasma etching process.

In the present invention, referring to FIG. 5, plasma etching is already completed on the substrate 42, but some regions of the substrate 42 do not reach a certain etching standard or are over the partial regions. When the etching operation is to be performed, the sieve hole 31 may be distributed on the conductor plate 30 so as to correspond to the density of the partial zone on the conductor plate 30 by using the conductor plate 30 of the partial zone to enhance etching. have. Referring to FIG. 10, the plasma etching operation starts with the next step:

A plasma etching operation is performed on the substrate 42.

(202) According to the situation of the plasma over-etching operation detected by the light emitting end point detection unit for the plasma gas molecules, it is determined whether a predetermined standard has been reached, and if so, the step (203) is performed; Return to step 201.

(203) The discharge is stopped to the first electrode plate 10 and the second electrode plate 20.

In summary, the inventors conducted one experiment in contrast to the plasma etching technique of the prior art. In the present invention, the plasma etching operation of the amorphous silicon thin film on the substrate 42 was used, and data compared with the conventional technology was recorded. Referring to FIGS. 11A, 11B and 11C, the above chart shows three types of plasma etching technique data, which are changed by changing three conditions such as "plasma chamber air pressure", "composite gas flow rate ratio", and "distance between substrate and electrode". It is a mutual comparison. Among these experiments, the composite gas flow rate was used as a variable, and the gas flow rate of C12 and SF6, the C12 and frequency power generation stages were etched, and the amorphous silicon thin film was etched for a fixed time. After the silicon thin film was removed, the etch traces obtained at 25 positions on the substrate 42 were measured to obtain a consistency that was unevenly removed by an average value obtained by dividing the difference between the maximum depth and the minimum depth by twice the etch trace.

Therefore, as can be seen from the above three charts, the coincidence achieved by the plasma etching operation in the present invention is superior to the coincidence achieved by the plasma etching operation of the prior art. In other words, in the present invention, the conductor plate 30 is inserted into the plasma chamber 1 so that the plasma gas molecules 100 colliding irregularly using the conductor plate 30 may be applied to the conductor plate 30. While passing through, it is possible to form a relatively even etching effect on the surface of the substrate 42 by sputtering on the surface of the substrate 42 evenly. The present invention has improved the benefits and effects that many prior art has not achieved with plasma etching, and therefore the present invention is certainly patentable.

According to the present invention, a relatively even etching effect can be exhibited on the surface of the substrate. Furthermore, when the conventional plasma etching system attempts to etch a substrate having a large size, the strength of the electric field is not uniform. The defects of uneven distribution and uneven etching were effectively solved.

The above description is limited to preferred embodiments of the present invention, and the structural features of the present invention are not limited thereto, and anyone skilled in the art may etch, deposit, or deposit the present invention. In the field of implementation of Plasma Ionization Technology, including ashing and ashing, all easily conceivable changes or modifications are considered to be within the scope of the present invention.

Claims (18)

In a plasma etching system, A sealed plasma chamber capable of injecting a complex gas therein; A first electrode plate installed on the plasma chamber, connected to electricity of a first power supply unit, and receiving a voltage by the first power supply unit; A second electrode plate provided at a bottom of the plasma chamber and connected to electricity of a second power supply unit and receiving another voltage different from the voltage of the first electrode plate by the power supply terminal; A second electrode plate dissociating the complex gas to convert the complex gas into a plasma gas molecule; A carrier positioned between the first electrode plate and the second electrode plate, the carrier being electrically connected to the second electrode plate and for placing a substrate to be etched; A conductor plate positioned between the first electrode plate and the substrate and connected to each other at a ground terminal, wherein a plurality of sieve holes are provided to pass plasma gas molecules between the first electrode plate and the conductor plate. The plate also includes a conductor plate for uniformly sputtering plasma gas molecules onto the thin film on the surface of the substrate so that the plasma etching process is performed on the thin film. The method of claim 1, The plasma chamber is connected to a gas control module, and a plurality of gas outlets are installed at a portion of the surface of the plasma chamber adjacent to the first electrode plate, so that the gas control module is connected to the gas outlet and is connected to the plasma chamber. The plasma etching system, characterized in that for receiving the composite gas through the gas outlet. The method of claim 2, The gas control module includes a plurality of gas transport pipes connected to the gas outlet so that a plurality of different kinds of gases can be sent out; Control units installed in the gas transport pipes corresponding to different gases to transport and mix the gases at a flow rate of a predetermined speed to form a composite gas, and then include a control unit that sends the gas to the plasma chamber through the gas outlet. Plasma etching system, characterized in that. The method of claim 3, At least one exhaust port is installed at a portion adjacent to the second electrode plate on the surface of the plasma chamber, and each exhaust port is fitted such that one exhaust pump is movable, and when each exhaust pump is opened, the plasma molecules are released into the plasma chamber. Waste generated after plasma etching the substrate is discharged to the outside of the plasma chamber, and each exhaust pump applies pressure to the plasma chamber by discharging air in the plasma chamber. . The method of claim 4, wherein And a detection unit is installed at one side of the plasma chamber opposite to the plasma gas forming portion, and the detection unit identifies and detects a plasma etching process performed on the substrate. The method of claim 5, And wherein the conductor plate is perpendicular to the substrate and the second electrode plate, and the conductor plate and the substrate have a common distance. The method of claim 6, The two electrode plates are electrically conductive, and a first insulating layer which cuts off electricity is coated on both outer surfaces of the two electrode plates, which are not opposite to the conductor plate, so that the two first insulating layers form a plasma gas molecule. Preventing the impact and sputtering of the two electrodes. The method of claim 6, Wherein said carrier is comprised of a single conductor material. The method of claim 6, And the size of the sieve hole is directly proportional to the flow rate of the plasma gas molecules passing through the sieve hole. The method of claim 9, And the dimension of the sieve hole increases gradually from the four circumferences of the conductor plate toward the central region of the conductor plate. The method of claim 6, And the density at which the sieve holes are distributed in the conductor plate is directly proportional to the etching strength of the substrate of the plasma gas molecules passing through the conductor plate. The method of claim 11, And the density at which the sieve holes are distributed is gradually increased from four circumferences of the conductor plate toward the central region of the conductor plate. The method of claim 11, The sieve hole is arranged in the conductor plate in a plurality of vertical lines. The method of claim 11, The sieve hole is arranged in the conductor plate with a plurality of horizontal lines. The method of claim 13, The vertical line is arranged to include a plurality of horizontal lines in the conductor plate. The method of claim 11, The sieve hole is arranged in the conductor plate in one square. The method of claim 11, And the sieve hole is arranged in the conductor plate in one circle. The method of claim 12, And the sieve hole is arranged in the conductor plate in the form of one spider web.

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