CN100514571C - Plasma etching system - Google Patents
Plasma etching system Download PDFInfo
- Publication number
- CN100514571C CN100514571C CNB2006101083505A CN200610108350A CN100514571C CN 100514571 C CN100514571 C CN 100514571C CN B2006101083505 A CNB2006101083505 A CN B2006101083505A CN 200610108350 A CN200610108350 A CN 200610108350A CN 100514571 C CN100514571 C CN 100514571C
- Authority
- CN
- China
- Prior art keywords
- plasma
- plate
- battery lead
- plasma etching
- conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000005530 etching Methods 0.000 claims abstract description 32
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 132
- 239000011521 glass Substances 0.000 claims description 28
- 239000002131 composite material Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000008676 import Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 230000001788 irregular Effects 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 210000002381 plasma Anatomy 0.000 description 130
- 238000005516 engineering process Methods 0.000 description 19
- 238000009826 distribution Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 230000005684 electric field Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- KZMAWJRXKGLWGS-UHFFFAOYSA-N 2-chloro-n-[4-(4-methoxyphenyl)-1,3-thiazol-2-yl]-n-(3-methoxypropyl)acetamide Chemical compound S1C(N(C(=O)CCl)CCCOC)=NC(C=2C=CC(OC)=CC=2)=C1 KZMAWJRXKGLWGS-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 241000239290 Araneae Species 0.000 description 1
- 206010057855 Hypotelorism of orbit Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009342 intercropping Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
A plasma etching system includes a closed plasma chamber, inside the chamber, compound gas is filled, the two sides inside the chamber are respectively provided with a first electric supply terminal and a second electric supply terminal which are respectively connected with a first plate electrode as well as a a second plate electrode, the plasma chamber is arranged with a grounded electric conduction sieve plate parallelly between the two plate electrodes, a pedestal for putting a substrate waited to be etched is arranged inside the plasma chamber, when the two electric supply terminals supply different voltages to the two plate electrodes respectively, and the two plate electrodes are enabled to discharge to the compound gas to dissociate into plasma gas molecules which perform irregular impact inside the plasma chamber, through the leading of the electric conduction sieve plate, the gas molecules penetrate a plurality of sieve holes arranged on the electric conduction sieve plate, the gas molecules can impact consistently to a film on the surface of the substrate, so as to perform plasma etching treatment to the surface of the substrate, through controlling the common distance between the electric conduction sieve plate and the substrate, the plasma gas molecules are enabled to more evenly impact the surface of the substrate, so as to form more evenly etching effect of the surface of the substrate.
Description
Technical field
The invention relates to plasma etching system, it is a parallel conduction sieve plate that is equiped with ground connection between indoor one first battery lead plate of an airtight plasma and one second battery lead plate, this conduction sieve plate can be guided the plasma gas molecule that is produced after this first battery lead plate and the discharge of second battery lead plate, consistency ground bump is to the surface of a substrate, and to carrying out plasma etching treatment in the surface of this substrate, to solve the plasma gas molecule to the uneven shortcoming of the base plate carving and corrosion of big molded dimension.
Background technology
Our life is now just marching toward an information age that electronic industry is flourish, various electronic multimedia products are weeded out the old and bring forth the new rapidly, really amusement and the leisure development for the mankind brought more selectivity, yet, along with the continuous research and development of current various electronics technologies with progress greatly, the screen and the display unit of associated electrical product are improved all the time, also pursue the target of bigger display floater again and again, satisfying the user, or further meet and create interests and the purpose of saving cost the demand in future.
Generally speaking, LCD flat-panel screens (Flat Panel Display, FPD) size is generally 1,000～1,200 millimeters x 1,200～1,500 millimeters, and in the near future, glass substrate in this LCD flat-panel screens more may surpass every limit 2,500 millimeters scope, because in the manufacturing technology of this LCD flat-panel screens, see also shown in Figure 1, a step wherein is for utilizing a kind of plasma gas 400 in two electrodes 100,200 (as: silicon nitride Silicon Nitride of the film to a glass substrate 300 surfaces, be called for short SiN or amorphous silicon, abbreviation a-Si) carries out the processing of plasma etching, but manufacturer in plasma etching treatment therebetween, process in its processing has produced considerable bottleneck and restriction, its reason is that this plasma gas 400 is in large-sized glass substrate 300, because the scope that 400 pairs of these large-size glass substrates 300 of this plasma gas carry out etching work is wide excessively, the degree that each molecule in this plasma gas 400 is bombarded the centre and two end regions thereof of this large-size glass substrate 300 can't be consistent, and this plasma gas 400 just can't carry out etching work to this large-size glass substrate 300 equably; In other words, see also shown in Figure 2, this plasma gas 400 is in the electrode 100 of two different voltages (or frequency), in the time of 200, its central impedance that concentration produced (Impedance) is greater than impedance that two ends produced, therefore, molecule in this plasma gas 400 can't be in two electrodes 100,200 keep certain concentration, the molecule of this plasma gas 400 is also inconsistent to the effect of the plasma etching that carry out arbitrary position on these glass substrate 300 surfaces, again, if the desire lengthening carries out the time of plasma etching treatment to this glass substrate 300, in order to the part of strengthening these plasma gas 400 more weak concentration this glass substrate 300 is carried out the effect of plasma etching, the part of then original plasma gas 400 strong concentration is worn erosion on the contrary and is destroyed the planning of original etching on this glass substrate 300.
Therefore, the LCD flat-panel screens has faced a major challenge for the manufacturing technology of large-scale dimension glass substrate at present, the principle that general traditional solution promptly utilizes spacing (Gap) to be directly proportional with impedance (Impedance), see also shown in Figure 3, the hypotelorism of one electrode 100 with these glass substrate 300 two ends maybe strengthened the spacing of this electrode 100 with these glass substrate 300 central authorities, to make this plasma gas 400 as far as possible in two electrodes 100, the impedance that concentration produced of 200 central authorities near this plasma gas 400 in two electrodes 100,200 the impedance that two ends produced, consistency in the hope of 400 pairs of these glass substrate 300 etching efficient of this plasma gas, yet, the practice like this, at first must carry out bending work to this electrode 100, so that the central authorities of this electrode 100, two ends and this glass substrate 300 forms unequal spacing, but for the curvature of desiring crooked these electrode 100 required enforcements specific implementation ideally still.
Therefore, the producer must consider the concentration of the employed plasma gas of plasma etching treatment at this, by the identical concentration of this plasma gas, to keep the consistency of this plasma gas to this glass substrate etching efficient, so, from the above, desire to keep the same concentrations of this plasma gas and plasma etching treatment that this glass substrate carries out is possessed certain etching rate, it is real in inconvenience is arranged in manufacturing process, so above problem promptly becomes the important topic that the present invention solves in this desire.
Summary of the invention
A purpose of the present invention provides a kind of plasma etching system, makes this plasma gas molecule can possess the consistency of the arbitrary position of this substrate when carrying out plasma etching treatment, and unlikely to the uneven situation of this substrate generation etching.
Another object of the present invention provides a kind of plasma etching system, wherein these sieve apertures on this conduction sieve plate can utilize the sieve aperture design of different sizes, be arranged on this conduction sieve plate desired position, this plasma gas molecule can be by these sieve apertures of the different sizes of flowing through, and Be Controlled produces different flows, to control the preset concentration of this plasma gas, make this plasma gas molecule be set and clash into this substrate surface that desire is established.
Another purpose of the present invention provides a kind of plasma etching system, can utilize the ordered state of different sieve aperture distribution densities on this conduction sieve plate, the ordered state that sieve aperture is densely distributed or loose is arranged in the reinforcement of desire etching or weakens on this conduction sieve plate desired position, this plasma gas molecule can be by the densely distributed or loose ordered state of the sieve aperture of flowing through, and the respective amount that this plasma gas molecule that is effectively controlled passes the diverse location of this conduction sieve plate, to control the preset concentration of this plasma gas, make this plasma gas molecule be set and clash into this substrate surface that desire is established.
For this reason, the present invention proposes a kind of plasma etching system, comprising:
One airtight plasma chamber, the indoor composite gas that injects of this plasma;
One first battery lead plate is located at the top of this plasma chamber, and this first battery lead plate and one first feeder ear are electrically connected and connect, and this first feeder ear provides a voltage to this first battery lead plate;
One second battery lead plate, be located at the bottom of this plasma chamber, this second battery lead plate and one second feeder ear are electrically connected and connect, this second feeder ear provides another voltage of the voltage that is different from this first battery lead plate to this second battery lead plate, and this two voltage dissociates to this composite gas and makes this composite gas be transformed into the plasma gas molecule;
One pedestal, between this first battery lead plate and this second battery lead plate, second electrode is electric joins for this pedestal and this, and this pedestal is placed with a glass substrate to be etched;
One conduction sieve plate, be arranged between this first battery lead plate and this glass substrate, a this conduction sieve plate and an earth terminal are electrically connected and connect, this conduction sieve plate is provided with a plurality of sieve apertures, described sieve aperture can pass for the plasma gas molecule between this first battery lead plate and this conduction sieve plate, this conduction sieve plate makes a film of this plasma gas molecule consistency ground this glass baseplate surface of bump, and this film is carried out plasma etching treatment.
Plasma etching system proposed by the invention, be in indoor one first battery lead plate and one second battery lead plate of being provided with of an airtight plasma, this first battery lead plate and second battery lead plate are respectively with one first feeder ear and one second feeder ear is electric joins, this plasma chamber is the parallel in addition conduction sieve plate that is equipped with between between this first battery lead plate and second battery lead plate, a this conduction sieve plate and earth terminal is electric joins, and this conduction sieve plate is respectively with this first battery lead plate and second battery lead plate is electric joins, this second battery lead plate of the indoor vicinity of this plasma also is provided with a pedestal, this pedestal puts a substrate to be etched, the indoor composite gas that injects of this plasma etching, and this first feeder ear and one second feeder ear to this two battery lead plate be provided with respectively different sizes voltages and after being discharged, this two battery lead plate just dissociates to this composite gas and is transformed into quite active plasma gas molecule, this plasma gas molecule carries out irregular collision in this plasma is indoor, because this conduction sieve plate presents a same distance in the face of arbitrary position and this substrate of this substrate, this conduction sieve plate not only guides passing through of this plasma gas molecule, the surface that also can as one man bombard this substrate is to carry out plasma etching treatment, make this plasma gas molecule can possess to the consistency of the arbitrary position of this substrate when carrying out plasma etching treatment, and unlikely to the uneven situation of this substrate generation etching.
In sum, plasma etching system of the present invention can effectively solve the traditional plasma etching system to large-sized substrate to be etched, inhomogeneous because of electric field strength, cause the dense skewness that crosses of this plasma gas molecule, the uneven shortcoming of the etching that is caused.
Description of drawings
Fig. 1 is a plasma etching system configuration schematic diagram of known technology.
Fig. 2 is a plasma etching situation schematic diagram of known technology.
Fig. 3 is a plasma etching solution situation schematic diagram of known technology.
Fig. 4 is a kind of plasma etching system structural representation of the present invention.
Fig. 5 is the structural representation of one embodiment of the invention.
Fig. 6 is that the sieve aperture of another embodiment of the present invention is arranged schematic diagram.
Fig. 7 is that the sieve aperture of another embodiment of the present invention is arranged schematic diagram.
Fig. 8 a is the arrangement schematic diagram of the sieve aperture distribution shape of vertical line.
Fig. 8 b is the arrangement schematic diagram of horizontal sieve aperture distribution shape.
Fig. 8 c is the arrangement schematic diagram of the sieve aperture distribution shape of vertical line and horizontal line combined type.
Fig. 8 d be around this conduction sieve plate around the arrangement schematic diagram of rectangular sieve aperture distribution shape.
Fig. 8 e is the arrangement schematic diagram of the sieve aperture distribution shape of circle.
Fig. 8 f is the arrangement schematic diagram of netted sieve aperture distribution shape.
Fig. 9 is the flow chart of embodiments of the invention.
Figure 10 is the flow chart of another embodiment of the present invention.
Figure 11 a is the comparison diagram of the present invention and known technology " plasma chamber pressure ".
Figure 11 b is the comparison diagram of the present invention and known technology " compound gas flow ratio ".
Figure 11 c is the comparison diagram of the present invention and known technology " substrate and interelectrode spacing ".
Description of reference numerals:
Plasma chamber 1 substrate 42
First battery lead plate, 10 films 420
First feeder ear, 11 gas control modules 50
First insulating barrier, 12 gas output tubes 51
Detecting unit 15 gases 53
Second battery lead plate, 20 exhaust outlets 60
Second feeder ear, 21 exhaust pumps 61
Earth terminal 32 plasma bias nips 120
Embodiment
Plasma (Plasma) is to refer to the energy excitation neutral gas molecule, make it produce electronics (Electron), ion (Ion), free radical (Free Radical) isoreactivity material, it produces acceleration to electronics because of the current potential official post in electric field, in the process that electronics is quickening, take place to clash into and excited with other gas molecule, and radiate energy, and the atom-exciting that is clashed into is sent out and is disengaged electronics, so circulation, make plasma process have electronics, ion, free machine and neutral molecule simultaneously, be called plasmoid; Basically we then are made up of the gas that partly dissociates and the positive and negative charge particle of being with of equivalent by so-called plasma gas, the activity of wherein contained gas tool height, it is to utilize the driving of extra electric field and form, and produces glow discharge (Glow Discharge) phenomenon.
And the dissociation degree of the plasma gas that etching is used is lower, between 0.0001 to 0.1, the electric field that this plasma gas can pass through under direct current (DC) bias voltage or interchange radio frequency (RF) bias voltage forms, and the electronics in plasma gas source has usually and is molecule or the atom electronics that the back produced that dissociates at two: one, the secondary electron (Secondary Electron) that another is then produced for the ionic bombardment electrode, the plasma gas that under direct current (DC) electric field, produces, its electron source is mainly based on secondary electron, and the plasma gas that interchange radio frequency (RF) electric field produces down, the electronics that its electron source is produced after then dissociating based on molecule or atom; Wherein under radio frequency discharge (RF Discharge) situation, most electronics is because high-frequency operation, making does not have time enough to move to positive electrode in half period, therefore, these electronics will vibrate in the electrode intercropping, and produce collision with gas molecule, and the required frequency of oscillation lower limit of radio frequency discharge will be decided on the size of interelectrode spacing, pressure, rf electric field amplitude and the factors such as the potential energy that dissociates of gas molecule.
The present invention is a kind of plasma etching system, see also Fig. 4, shown in 5, be to comprise an airtight plasma chamber 1 (Plasma Etching Chamber), be injected with composite gas in this plasma chamber 1, and its inner top and bottom are respectively equipped with one first battery lead plate 10 (Source Electrode) and one second battery lead plate 20 (Bias Electrode), this first battery lead plate 10 and second battery lead plate 20 (as: exchange radio frequency network with one first feeder ear 11 and one second feeder ear 21 respectively, RF Network) is to be electrically connected and connects, this plasma chamber 1 is in this two battery lead plate 10,20 are equipped with a conduction sieve plate 30 (Ground Grid) in addition, a this conduction sieve plate 30 and an earth terminal 32 (Ground) are to be electrically connected and connect, these 1 inherent contiguous these second battery lead plate, 20 positions, plasma chamber, also be provided with a pedestal 40 (Carrier), be placed with substrate 42 (as: glass substrates to be etched on this pedestal 40, Glass Substrate), this two feeder ear 11 of waiting, 21 respectively to this two battery lead plate 10,20 provide different voltage, and make this two battery lead plate 10,20 discharge after, its this composite gas of discharge process military order dissociate (Dissociation Reaction), and be transformed into quite active plasma gas molecule 1 00 (Plasma), this plasma gas molecule 100 carries out irregular collision (ionization collision) in this plasma chamber 1, and see through the guiding of this conduction sieve plate 30, make the plasma gas molecule 1 00 that is distributed in 30 on this first battery lead plate 10 and this conduction sieve plate, pass a plurality of sieve apertures 31 of laying on this conduction sieve plate 30, but consistency ground bump (sputering) is to this substrate 42 a surface film 420 (as: silicon nitride Silicon Nitride that are coated with that spread, be called for short SiN or amorphous silicon, be called for short a-Si), and this film 420 is carried out plasma etching treatment (Plasma etching), so, can be by suitably designing the size and the distribution density of sieve aperture 31 on this conduction sieve plate 30, effectively control the respective amount that this plasma gas molecule 100 passes the diverse location of this conduction sieve plate 30, and by the mutual distances of this conduction sieve plate 30 of control with this substrate 42, make this plasma gas molecule 100 be able to clash into more equably the surface of this substrate 42 (being film 420), surface to this substrate 42 forms etching effect uniformly, and then effectively solve the traditional plasma etching system to large-sized substrate 42 to be etched, because of electric field strength inhomogeneous, cause this plasma gas molecule 100 dense skewness that cross, the uneven shortcoming of the etching that is caused.
In the most preferred embodiment of the present invention, see also shown in Figure 5 again, a this plasma chamber 1 and a gas control module 50 (Process Gas Panel) are connected, and these contiguous these first battery lead plate, 10 places, 1 surface, plasma chamber have provided a plurality of air taking ports 13 (Gas Feeder), this plasma chamber 1 can receive this composite gas via these air taking ports 13, include a plurality of gas output tubes 51 in this gas control module 50, these gas output tubes 51 are connected with these air taking ports 13, to export a plurality of different types of gases 53, as: neon (Ne), xenon (Xe), argon inert gases such as (Ar), corresponding different types of gas 53 is respectively equipped with a control unit 52 (Mass Flow Controller) on these gas output tubes 51, these control units 52 mix these different types of gas 53 with the flow of a default speed, and form this composite gas by these air taking ports 13 to import this plasma chamber 1.
In addition, this 1 surface, plasma chamber and contiguous these second battery lead plate, 20 places have also provided at least one exhaust outlet 60, each exhaust outlet 60 is fastened versatilely and is provided with an exhaust pump 61, each exhaust pump 61 is when opening, this plasma gas molecule 100 is discharged outside this plasma chamber 1 discarded object that this substrate 42 carries out being produced after the plasma etching treatment in this plasma chamber 1, and simultaneously each exhaust pump 61 also can be discharged air in this plasma chamber 1, so that this plasma chamber 1 reaches a basic pressure.
Among this embodiment, see also shown in Figure 5 again, this plasma chamber 1 also is provided with a detecting unit 15 in the side in the face of this plasma gas formation place, and (as: light penetrates the endpoint detecting unit, Optical EmissionEndpoint Detection System), but this detecting unit 15 identifications and detect the situation of plasma etching treatment that this substrate 42 carries out, when 1 pair of this substrate 42 carries out the operation of plasma etching treatment when this plasma chamber, plasma gas characteristic (as: the optical wavelength of generation that is produced in 15 pairs of these plasma chambers of this detecting unit 1, Wavelength) detect, with the concentration that picks out this plasma gas conformance with standard whether.
In addition, this two battery lead plate 10,20 all are made up of the material of an electric conductor, this two battery lead plate 10,20 non-one sides in the face of this conduction sieve plate 30 all are coated with outward can isolate one first electric insulating barrier 12, this 2 first insulating barrier 12 can prevent the bump and the sputter of the most of area of 100 pairs of these two electrodes of this plasma gas molecule, reduce this substrate 42 contaminated degree in the process of plasma etching treatment, and this first insulating barrier 12 is coated on this most surface of two electrodes and can prevents this first feeder ear 11 and this second feeder ear 21 when discharge, unlikelyly emits power supply by being coated with these first insulating barrier, 12 places; This pedestal 40 and these 20 electric joining of second battery lead plate in order to conduct this second feeder ear 21 power supply of emitting, and carry out plasma etching treatment to the film 420 of this substrate 42.
These sieve apertures 31 are used to guide this plasma gas molecule 100 on this conduction sieve plate 30, make this plasma gas molecule 100 in this plasma chamber 1 during irregular collision, can see through these sieve apertures 31 and carry out plasma etching treatment towards this substrate 42, yet, the bombardment of the surface of 100 pairs of these substrates 42 of this plasma gas molecule is when carrying out plasma etching treatment, if still have when inhomogeneous slightly, or desire is strengthened etching processing (over etching operation to the subregion on these substrate 42 surfaces, Overetch) time, the manufacturer is convenient to that the variation to these sieve apertures 31 designs on this conduction sieve plate 30, therefore, among another embodiment among the present invention, see also Fig. 5, shown in 6, configurable these sieve apertures 31 that different size dimensions are arranged on this conduction sieve plate 30, the size of these sieve apertures 31 is increased progressively by the middle section towards this conduction sieve plate 30 around this conduction sieve plate 30, because the size of this sieve aperture 31 is proportional with the flow size of the plasma gas molecule 1 00 that passes through this sieve aperture 31, make that this plasma gas molecule 100 can be by these sieve apertures 31 of the different sizes of flowing through, and control produces different flows, the present invention does not limit to the arrangement position of the sieve aperture 31 of this conduction sieve plate 30, can dispose corresponding arrangement mode according to the demand of these substrate 42 actual etching situations own.
Among the another embodiment among the present invention, see also Fig. 5, shown in 7, configurable these sieve apertures 31 that different arranging densities are arranged on this conduction sieve plate 30, the density that these sieve apertures 31 distribute is increased progressively by the middle section towards this conduction sieve plate 30 around this conduction sieve plate 30, because these sieve apertures 31 are proportional to the etching power of this substrate with the plasma gas molecule that passes through this conduction sieve plate 30 in the density that this conduction sieve plate 30 distributes, make that this plasma gas molecule 100 can be by the densely distributed or loose ordered state of the sieve aperture 31 of flowing through, and the respective amount that this plasma gas molecule 100 that is effectively controlled passes the diverse location of this conduction sieve plate 30 makes this plasma gas molecule 100 be set and clashes into these substrate 42 surfaces that desire is established.
The present invention does not limit to the arrangement position of these sieve apertures 31 on this conduction sieve plate 30 among this embodiment, the manufacturer can be according to the actual etching demand of carrying out plasma etching on arbitrary position on these substrate 42 surfaces, and the density distribution of these sieve apertures 31 that on this conduction sieve plate 30, strengthen to distribute, its these sieve apertures 31 on this conduction sieve plate 30 the arranged distribution that can present can be:
1, sieve aperture 31 distribution shapes (Veritical Arrangment) of vertical line, shown in Fig. 8 a, these sieve apertures 31 are arranged on this conduction sieve plate 30 with a plurality of vertical lines.
2, horizontal sieve aperture 31 distribution shapes (Horizontal Arrangment), shown in Fig. 8 b, these sieve apertures 31 are arranged on this conduction sieve plate 30 with a plurality of horizontal lines.
3, vertical line and horizontal line combined type sieve aperture 31 distribution shapes (Skewed Arrangment), shown in Fig. 8 c, these sieve apertures 31 synthetically are arranged on this conduction sieve plate 30 with a plurality of horizontal lines and vertical line.
4, around this conduction sieve plate 30 around rectangle sieve aperture 31 distribution shapes (Square Arrangment), shown in Fig. 8 d, these sieve apertures 31 with the rectangular arranged around this conduction sieve plate 30 on this conduction sieve plate 30.
5, Yuan Xing sieve aperture 31 distribution shapes (Circle Arrangment), shown in Fig. 8 e, these sieve apertures 31 with a circular arrangement this conduction sieve plate 30 on.
6, netted arrangement mode (Spider Web Arrangment), shown in Fig. 8 f, these sieve apertures 31 are with netted being arranged on this conduction sieve plate 30.
Please refer to Fig. 5 again, shown in the 8f, wherein the netted arrangement mode of this kind increases the arranging density of these sieve apertures 31 gradually towards central authorities around this conduction sieve plate 30, be in the middle position of this conduction sieve plate 30 and be provided with these sieve apertures 31 of arranging comparatively dense, this conduction sieve plate 30 then is provided with these looser sieve apertures 31 of arrangement around away from middle position, when this plasma gas molecule 100 conducts electricity sieve plate 30 in the face of 30 directions towards this substrate 42 of this conduction sieve plate by this, this plasma gas molecule 100 is positioned on the middle position of this conduction sieve plate 30 and when arranging these sieve apertures 31 of comparatively dense, the flow of this plasma gas molecule 100 is tending towards concentrated, just the corresponding region of this substrate 42 is strengthened carrying out the degree of plasma etching treatment, and this plasma gas molecule 100 be positioned at this conduction sieve plate 30 around and when arranging these looser sieve apertures 31, make the flow of this plasma gas molecule 100 just be tending towards slow, just the degree of carrying out plasma etching treatment is slowed down in the corresponding region of this substrate 42, so, this plasma gas molecule 100 just optionally carries out plasma etching treatment strong or that relax to the specific region of this substrate 42.
When the present invention begins to carry out plasma etching treatment in this plasma chamber 1, see also shown in Figure 5 again, this first feeder ear 11 and second feeder ear 21 are respectively two and exchange radio frequency source (RF Network), and this detecting unit 15 is light ejaculation endpoint detecting unit (Optical Emission Endpoint DetectionSystem), this first battery lead plate 10 to this 30 on conduction sieve plate forms plasma source district 110, and should form a plasma bias region 120 by conduction sieve plate 30 to 20 of this second battery lead plates, so, substrate 42 when this plasma chamber 1 with desire processing places on this pedestal 40, and this pedestal 40 and this substrate 42 are sent in this plasma chamber 1, and definite this first battery lead plate 10, after second battery lead plate 20 and this conduction sieve plate 30 have installed in this plasma etching chamber, see also shown in Figure 9ly, this plasma etching is handled and is just begun to carry out following step:
(101) utilize 61 pairs of these plasma chambers 1 of this exhaust pump to add and be pressed into a basic pressure (between 0.001 Bristol to 1.5 Bristol, between Torr);
(102) make these gases 53 in these control units 52 these gas control modules 50 of control be mixed into this composite gas and it is flowed in this plasma chamber 1 with the flow of given pace;
(103) utilize 61 pairs of these plasma chambers 1 of this exhaust pump to add again and be pressed into a preset pressure (between 0.005 Bristol to 15 Bristol, Torr);
(104) discharge is given (between 100 watts to 100 kilowatts, Watt) to this first battery lead plate 10, second battery lead plate 20 with two different radio-frequency voltages respectively with the frequency of 13.56 megahertzes (MHz) in this two interchanges radio frequency source;
(105) after this composite gas was subjected to the discharge of this two radio-frequency voltage, the composite gas that just starts from this plasma source district 110 and this plasma bias region 120 was dissociated into this plasma gas molecule 100;
(106) this plasma gas molecule 100 just starts from carrying out irregular collision in this district 110, plasma source and this plasma bias region 120;
(107) action of plasma etching treatment is carried out on the surface of 00 pair of this substrate 42 of plasma gas molecule 1 by this conduction sieve plate 30;
(108) penetrate the situation of the plasma etching treatment of endpoint detecting unit being detected by this plasma gas molecule 100 according to this light, and judge whether to arrive the terminal point (Endpoint) of plasma etching, if then carry out step (109), otherwise, get back to step (107);
(109) this two interchanges radio frequency source stops the discharge to this first battery lead plate 10, second battery lead plate 20;
(110) basic pressure is recovered in 61 pairs of these plasma chambers of this exhaust pump 1;
(111) take out substrate 42 on this pedestal 40 to finish plasma etching treatment.
Among the present invention, see also shown in Figure 5 again, when this substrate 42 has been finished plasma etching treatment, only the part zone of this substrate 42 does not reach certain etching standard, or desire carries out the over etching operation to this subregion, just can utilize desire to strengthen a conduction sieve plate 30 of this subregion of etching, and this conduction sieve plate 30 is provided with these sieve apertures 31 distributions corresponding to this subregion density, see also shown in Figure 10ly, this plasma over etching operation just begins to carry out following step:
(201) this substrate 42 is carried out the operation of plasma over etching;
(202) penetrate the situation of the plasma over etching operation of endpoint detecting unit being detected by this plasma gas molecule 100 according to this light, and judge whether to arrive predetermined standard, if, then carry out step (203), otherwise, get back to step (201);
(203) get back to the discharge that stops this first battery lead plate 10, second battery lead plate 20.
In sum, the inventor is done an experiment with the plasma etching technology that the present invention contrasts known technology, utilization wherein of the present invention is carried out the plasma etching operation to the amorphous silicon membrane on this substrate 42, and the data compared of record and known technology, see also Figure 11 a, shown in b and the c, these charts are to change " plasma chamber pressure " respectively, " compound gas flow ratio " reaches " substrate and interelectrode spacing " three conditions and compares mutually with the data of the plasma etching technology of known technology, be that the experiment of variable is the gas flow ratio with C12 and SF6 wherein with " compound gas flow ratio ", be variable with radio frequency generating end, after amorphous silicon membrane being carried out the etching operation of one period set time and removing amorphous silicon membrane, the resulting etching vestige in 25 positions on this substrate 42 is measured, and obtained the inhomogeneous consistency that removes divided by the mean value of 2 times of etching vestiges with the difference of depth capacity and minimum-depth.
Therefore, by in above-mentioned three charts considerable it, the present invention carries out the consistency that the plasma etching operation is reached, come goodly than the consistency that the plasma etching operation of known technology is reached, in other words, the present invention is inserted with a conduction sieve plate 30 in this plasma chamber 1, this conduction sieve plate 30 makes and passes through this conduction sieve plate 30 in the plasma gas molecule 1 00 of irregular collision, really make this plasma gas molecule 100 in this plasma chamber 1, be able to clash into more equably the surface of this substrate 42, the surface of this substrate 42 is formed etching effect uniformly, the present invention improved many known technologies the plasma etching operation effect and the effect that can't reach.
The above, only for a specific embodiment of the best of the present invention, only structural feature of the present invention is not limited thereto, anyly be familiar with this operator in the present invention is used for the implementation field of plasma dissociation technology (PlasmaIonization Technology), comprise etching (Etching), deposition (Deposition) and ashing (Ashing), can think easily and variation or modification, all can be encompassed in the claim of this case.
Claims (17)
1, a kind of plasma etching system comprises:
One airtight plasma chamber, the indoor composite gas that injects of this plasma;
One first battery lead plate is located at the top of this plasma chamber, and this first battery lead plate and one first feeder ear are electrically connected and connect, and this first feeder ear provides a voltage to this first battery lead plate;
One second battery lead plate, be located at the bottom of this plasma chamber, this second battery lead plate and one second feeder ear are electrically connected and connect, this second feeder ear provides another voltage of the voltage that is different from this first battery lead plate to this second battery lead plate, and this two voltage dissociates to this composite gas and makes this composite gas be transformed into the plasma gas molecule;
One pedestal, between this first battery lead plate and this second battery lead plate, second electrode is electric joins for this pedestal and this, and this pedestal is placed with a glass substrate to be etched;
One conduction sieve plate, be arranged between this first battery lead plate and this glass substrate, a this conduction sieve plate and an earth terminal are electrically connected and connect, this conduction sieve plate is provided with a plurality of sieve apertures, described sieve aperture can pass for the plasma gas molecule between this first battery lead plate and this conduction sieve plate, this conduction sieve plate makes a film of this plasma gas molecule consistency ground this glass baseplate surface of bump, and this film is carried out plasma etching treatment.
2, plasma etching system as claimed in claim 1, it is characterized in that, a this plasma chamber and a gas control module are connected, and contiguous this first battery lead plate place of this plasma chamber surface has provided a plurality of air taking ports, this gas control module and described air taking port are connected, and this plasma chamber receives this composite gas via described air taking port.
3, plasma etching system as claimed in claim 2 is characterized in that, comprises in this gas control module: a plurality of gas output tubes are connected with described air taking port, to export a plurality of different types of gases;
One control unit, corresponding described different types of gas and being located at respectively on the described gas output tube, described control unit is with the flow output of a default speed and mix described a plurality of different types of gas forming this composite gas, and imports this plasma chamber by described air taking port.
4, plasma etching system as claimed in claim 3, it is characterized in that, contiguous this second battery lead plate place of this plasma chamber surface has also provided at least one exhaust outlet, each exhaust outlet is fastened versatilely and is provided with an exhaust pump, each exhaust pump is when opening, it is outdoor to make this plasma molecule discharge this plasma at the indoor discarded object that this glass substrate is carried out being produced after the plasma etching treatment of this plasma, and each exhaust pump can be discharged air in this plasma chamber with to this plasma chamber pressurization.
5, plasma etching system as claimed in claim 4, it is characterized in that, this plasma chamber also is provided with a detecting unit in the side in the face of this plasma gas formation place, and this detecting unit carries out identification and detecting to the situation of plasma etching treatment that this glass substrate carries out.
6, plasma etching system as claimed in claim 5, it is characterized in that, this two battery lead plate all is electrically conductive, the non-one side in the face of this conduction sieve plate of this two battery lead plate all is coated with outward can isolate one first electric insulating barrier, and this 2 first insulating barrier prevents that this plasma gas molecule from clashing into and sputter this two electrode.
7, plasma etching system as claimed in claim 5 is characterized in that, this pedestal is made up of the material of an electric conductor.
8, plasma etching system as claimed in claim 5 is characterized in that, the size of this sieve aperture is proportional with the flow size of the plasma gas molecule that passes through this sieve aperture.
9, plasma etching system as claimed in claim 8 is characterized in that, the size of described sieve aperture is increased progressively by the middle section towards this conduction sieve plate around this conduction sieve plate.
10, plasma etching system as claimed in claim 5 is characterized in that, described sieve aperture is proportional to the etching power of this glass substrate with the plasma gas molecule that passes through this conduction sieve plate in the density that this conduction sieve plate distributes.
11, plasma etching system as claimed in claim 10 is characterized in that, the density that described sieve aperture distributes is increased progressively by the middle section towards this conduction sieve plate around this conduction sieve plate.
12, plasma etching system as claimed in claim 10 is characterized in that, described sieve aperture is arranged on this conduction sieve plate with a plurality of vertical lines.
13, plasma etching system as claimed in claim 10 is characterized in that, described sieve aperture is arranged on this conduction sieve plate with a plurality of horizontal lines.
14, plasma etching system as claimed in claim 12 is characterized in that, described sieve aperture also is arranged on this conduction sieve plate with a plurality of horizontal lines.
15, plasma etching system as claimed in claim 10 is characterized in that, described sieve aperture with a rectangular arranged this conduction sieve plate on.
16, plasma etching system as claimed in claim 10 is characterized in that, described sieve aperture with a circular arrangement this conduction sieve plate on.
17, plasma etching system as claimed in claim 11 is characterized in that, described sieve aperture is with netted being arranged on this conduction sieve plate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101083505A CN100514571C (en) | 2006-08-02 | 2006-08-02 | Plasma etching system |
| HK08107370.7A HK1117273A1 (en) | 2006-08-02 | 2008-07-04 | A plasma etching system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101083505A CN100514571C (en) | 2006-08-02 | 2006-08-02 | Plasma etching system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101118854A CN101118854A (en) | 2008-02-06 |
| CN100514571C true CN100514571C (en) | 2009-07-15 |
Family
ID=39054887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101083505A Expired - Fee Related CN100514571C (en) | 2006-08-02 | 2006-08-02 | Plasma etching system |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100514571C (en) |
| HK (1) | HK1117273A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5038365B2 (en) * | 2009-07-01 | 2012-10-03 | 株式会社東芝 | Susceptor and deposition system |
| US20120073752A1 (en) * | 2010-09-24 | 2012-03-29 | Memc Electronic Materials, Inc. | Adapter Ring For Silicon Electrode |
| CN103839742A (en) * | 2012-11-28 | 2014-06-04 | 中微半导体设备(上海)有限公司 | Magnetic field distribution regulation device and method for plasma processor |
| US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| CN109817505B (en) * | 2017-11-20 | 2021-09-24 | 长鑫存储技术有限公司 | Plasma supply device and wafer etching device |
| CN113766719A (en) * | 2020-06-04 | 2021-12-07 | 山西大学 | Device and method for controlling movement of charged particles in plasma |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5015331A (en) * | 1988-08-30 | 1991-05-14 | Matrix Integrated Systems | Method of plasma etching with parallel plate reactor having a grid |
| US5622593A (en) * | 1993-12-22 | 1997-04-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP2003163201A (en) * | 2002-09-09 | 2003-06-06 | Hitachi Ltd | Plasma etching device |
-
2006
- 2006-08-02 CN CNB2006101083505A patent/CN100514571C/en not_active Expired - Fee Related
-
2008
- 2008-07-04 HK HK08107370.7A patent/HK1117273A1/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5015331A (en) * | 1988-08-30 | 1991-05-14 | Matrix Integrated Systems | Method of plasma etching with parallel plate reactor having a grid |
| US5622593A (en) * | 1993-12-22 | 1997-04-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP2003163201A (en) * | 2002-09-09 | 2003-06-06 | Hitachi Ltd | Plasma etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| HK1117273A1 (en) | 2009-01-09 |
| CN101118854A (en) | 2008-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100514571C (en) | Plasma etching system | |
| KR100436072B1 (en) | Device for Fabricating Film for Plasma-Forming Thin Film | |
| US7976674B2 (en) | Embedded multi-inductive large area plasma source | |
| EP1650326A2 (en) | Plasma processing apparatus | |
| CN103715049A (en) | Plasma processing apparatus and method for adjusting process rate of marginal area of substrate | |
| CN100466155C (en) | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements | |
| TW200306624A (en) | Gas distribution plate electrode for a plasma reactor | |
| WO2004107394A3 (en) | Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method | |
| CN101443474A (en) | Method and apparatus for improving uniformity of large-area substrates | |
| JP2000331995A (en) | Flat plate gas introduction device of ccp reaction vessel | |
| KR20090130907A (en) | Compound plasma reactor | |
| KR100803825B1 (en) | Plasma etching system | |
| JPS61168923A (en) | Even gas flow generator | |
| US20070144890A1 (en) | Sputtering apparatus | |
| US6390020B1 (en) | Dual face shower head magnetron, plasma generating apparatus and method of coating substrate | |
| CN218976902U (en) | Double-frequency microwave low-pressure plasma source based on waveguide slot feed multi-die cavity | |
| TWI463923B (en) | Plasma processing device | |
| US8604696B2 (en) | Plasma excitation module | |
| JP3160194B2 (en) | Plasma processing method and plasma processing apparatus | |
| CN201238415Y (en) | Plasma excitation component and plasma processing apparatus including the same | |
| US8198793B2 (en) | Cathode discharge apparatus | |
| KR101104093B1 (en) | Internal antenna and plasma generation apparatus | |
| CN218868424U (en) | Microwave resonant cavity | |
| KR100541541B1 (en) | Process Chamber of Plasma Process System | |
| CN103187235A (en) | Discharging component, cavity device and plasma enhanced chemical vapor deposition (PECVD) device of substrate processing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1117273 Country of ref document: HK |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1117273 Country of ref document: HK |
|
| ASS | Succession or assignment of patent right |
Owner name: JIFU ENERGY EQUIPMENT CO., LTD. Free format text: FORMER OWNER: MEISHANG HUICHENG SYSTEM TECHNOLOGY CO.,LTD Effective date: 20120221 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: HONG KONG, CHINA |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120221 Address after: Room 304, Dong Mei centre, 43 Queen 's Road East, Wan Chai, Hongkong, China Patentee after: Ji Fu Energy Equipment Co., Ltd. Address before: Fremont road California Fremont No. 47448 U.S. Patentee before: Meishang Huicheng System Technology Co.,Ltd |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090715 Termination date: 20160802 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |