CN117612977A - Air inlet device and air inlet method - Google Patents
Air inlet device and air inlet method Download PDFInfo
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- CN117612977A CN117612977A CN202410089145.7A CN202410089145A CN117612977A CN 117612977 A CN117612977 A CN 117612977A CN 202410089145 A CN202410089145 A CN 202410089145A CN 117612977 A CN117612977 A CN 117612977A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000009826 distribution Methods 0.000 claims abstract description 124
- 238000005192 partition Methods 0.000 claims abstract description 36
- 238000009423 ventilation Methods 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 abstract description 24
- 239000007789 gas Substances 0.000 description 134
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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Abstract
The invention relates to an air inlet device and an air inlet method, wherein the air inlet device comprises: the air inlet is arranged at the side edge of the air inlet device and is used for inputting air into the air inlet device; the top baffle is arranged at the top of the air inlet device; the bottom baffle is arranged at the bottom of the air inlet device; the partition wall is arranged in the air inlet device and used for separating the central area and the edge area of the air inlet device, and an air vent is arranged on the partition wall. The air inlet device can realize different air inlet rates of the wafer central area and the wafer edge area, and different air distribution amounts of the wafer central area and the wafer edge area, so that different reaction rates of the wafer central area and the wafer edge area are realized.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an air inlet device and an air inlet method.
Background
In the chip manufacturing process, a lot of processes need to charge gas into the chamber, but the existing top gas inlet mode is adopted, the gas inlet rate of the center and the edge of the wafer is approximately consistent by adopting the gas inlet mode, the gas of the center and the edge of the wafer is approximately uniformly distributed, in the practical engineering application, the gas distribution amounts of the center and the edge of the wafer are required to be different, so that the reaction rates of the center area and the edge area of the wafer are different, and the gas distribution amounts of the center and the edge of the wafer are not different by the related technology at present.
Disclosure of Invention
In view of the above, the present invention provides an air intake device and an air intake method.
The present invention provides an air intake device, comprising: the air inlet is arranged at the side edge of the air inlet device and is used for inputting air into the air inlet device; the top baffle plate is arranged at the top of the air inlet device; the bottom baffle plate is arranged at the bottom of the air inlet device; the partition wall is arranged in the air inlet device and used for separating the central area and the edge area of the air inlet device, and an air vent is arranged on the partition wall.
The air inlet device can realize different air inlet rates of the wafer central area and the wafer edge area, and different air distribution amounts of the wafer central area and the wafer edge area, so that different reaction rates of the wafer central area and the wafer edge area are realized.
In one embodiment, the gas inlet means is located above the wafer in the chamber.
In one embodiment, the shape of the top view of the air inlet means comprises a circle, and the air inlet means covers at least the wafer.
In one embodiment, the air vent is arranged offset from the air inlet.
In one embodiment, the air inlet includes a first air inlet directly opposite the air vent and a second air inlet offset from the air vent.
In one embodiment, the device further comprises an air inlet control module for controlling the opening/closing of the first air inlet and the second air inlet respectively, wherein when the first air inlet is opened and the second air inlet is closed, the air distribution amount of the central area of the air inlet device is larger than the air distribution amount of the edge area; when the first air inlet is closed and the second air inlet is opened, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area; when the first air inlet and the second air inlet are opened, the gas distribution amount of the central area of the air inlet device is equal to the gas distribution amount of the edge area. By adopting the air inlet control module, the opening/closing of the first air inlet and the second air inlet can be controlled in real time according to the requirements, so that the real-time switching between the three states that the reaction rate of the central area of the wafer is greater than that of the edge area of the wafer, the reaction rate of the central area of the wafer is less than that of the edge area of the wafer, and the reaction rate of the central area of the wafer is equal to that of the edge area of the wafer can be realized.
In one embodiment, the vent includes a first vent directly opposite the air inlet and a second vent offset from the air inlet.
In one embodiment, the air inlet device further comprises a first ventilation control module for controlling the opening/closing of the first ventilation opening and the second ventilation opening respectively, wherein when the first ventilation opening is opened and the second ventilation opening is closed, the gas distribution amount of the central area of the air inlet device is larger than the gas distribution amount of the edge area; when the first air port is closed and the second air port is opened, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area; when the first air port and the second air port are opened, the gas distribution amount of the central area of the air inlet device is equal to the gas distribution amount of the edge area. By adopting the first ventilation control module, the opening/closing of the first ventilation opening and the second ventilation opening can be controlled in real time according to the requirements, so that the real-time switching between the three states that the reaction rate of the central area of the wafer is greater than that of the edge area of the wafer, the reaction rate of the central area of the wafer is less than that of the edge area of the wafer, and the reaction rate of the central area of the wafer is equal to that of the edge area of the wafer can be realized.
In one embodiment, the number of layers of the partition wall includes one layer.
In one embodiment, the partition wall comprises an annular partition wall.
In one embodiment, the shape of the vent comprises one or a combination of a plurality of circular, rectangular, triangular and strip shapes.
In one embodiment, the shape of the vent comprises a circle, and the diameter of the vent is between 0.1mm and 10mm.
In one embodiment, the number of layers of the partition wall is greater than or equal to two, so that the gas distribution amounts of different positions of the wafer can be adjusted more accurately.
In one embodiment, the air inlet device further comprises a second ventilation control module, wherein the second ventilation control module is used for controlling the cross-sectional area of the air inlet, and when the ratio of the cross-sectional area of the air inlet to the area of the partition wall is greater than a preset value, the gas distribution amount of the central area of the air inlet device is greater than the gas distribution amount of the edge area of the air inlet device; when the cross-sectional area of the air vent and the ratio of the cross-sectional area to the area of the partition wall are smaller than a preset value, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area.
In one embodiment, the air inlet device further comprises a third ventilation control module for controlling the opening quantity of the air vents, and when the ratio of the opening quantity of the air vents to the sum of the quantity of the air vents is greater than a specific value, the gas distribution quantity of the central area of the air inlet device is greater than the gas distribution quantity of the edge area; when the ratio of the number of the openings of the air vents to the sum of the number of the air vents is smaller than a specific value, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area.
In one embodiment, the air inlets are arranged in a central symmetry manner, and the number of the air inlets is greater than or equal to 3.
In one embodiment, the bottom baffle includes a plurality of first through holes.
In one embodiment, the aperture of the first through hole is between 0.1mm and 50mm.
In one embodiment, the bottom baffle covers at least the wafer.
In one embodiment, the upper portion of the air intake device includes a top air intake. The reaction rate of the wafer center region and the wafer edge region can be further adjusted by matching with the top air inlet.
In one embodiment, the top baffle includes a plurality of second through holes.
The invention also provides an air inlet method, which adopts the air inlet device to carry out air inlet operation on the cavity.
The air inlet method can realize different air inlet rates of the wafer central area and the wafer edge area, and different air distribution amounts of the wafer central area and the wafer edge area, so that different reaction rates of the wafer central area and the wafer edge area are realized.
In one embodiment, the air inlet comprises a first air inlet opposite to the air vent and a second air inlet staggered with the air vent, and the air inlet control module is used for respectively controlling the opening/closing of the first air inlet and the second air inlet, and when the gas distribution amount of the central area of the wafer is required to be larger than that of the edge area, the first air inlet is opened and the second air inlet is closed; when the gas distribution amount of the central area of the wafer is required to be smaller than that of the edge area, closing the first gas inlet and opening the second gas inlet; when the gas distribution amount of the central area of the wafer is required to be equal to that of the edge area, the first gas inlet and the second gas inlet are opened.
In one embodiment, the air port comprises a first air port opposite to the air inlet and a second air port staggered with the air inlet, and further comprises a first air port control module for controlling the opening/closing of the first air port and the second air port respectively.
In one embodiment, when the gas distribution in the center region of the wafer is required to be greater than the gas distribution in the edge region, the first vent is opened and the second vent is closed.
In one embodiment, when the gas distribution in the center region of the wafer is required to be smaller than the gas distribution in the edge region, the first vent is closed and the second vent is opened.
In one embodiment, the first vent and the second vent are opened when the gas distribution in the center region of the wafer is desired to be equal to the gas distribution in the edge region.
In one embodiment, the vent and the gas inlet are arranged in a staggered manner, and the gas distribution amount of the central area of the wafer is smaller than that of the edge area.
In one embodiment, when the difference between the gas distribution amount of the central area and the gas distribution amount of the edge area of the wafer needs to be increased, the gas inlet rate of the gas inlet is increased; when the difference between the gas distribution amount of the central area and the gas distribution amount of the edge area of the wafer needs to be reduced, the air inlet rate of the air inlet is reduced.
In one embodiment, when it is desired to increase the difference between the gas distribution in the center region and the gas distribution in the edge region of the wafer, the pressure in the chamber is reduced; when it is desired to reduce the difference between the gas distribution in the center region and the gas distribution in the edge region of the wafer, the pressure in the chamber is increased.
In one embodiment, a second vent control module is also included for controlling the cross-sectional area of the vent.
In one embodiment, when the gas distribution amount of the central area of the wafer is required to be larger than that of the edge area, the cross-sectional area of the vent and the ratio of the cross-sectional area to the area of the partition wall are larger than a preset value.
In one embodiment, when the gas distribution amount of the central area of the wafer is required to be smaller than that of the edge area, the cross-sectional area of the vent and the ratio of the cross-sectional area to the area of the partition wall are smaller than a preset value.
In one embodiment, a third vent control module is also included for controlling the number of openings of the vents.
In one embodiment, when the gas distribution amount of the central region of the wafer is required to be larger than that of the edge region, the ratio of the number of open vents to the sum of the number of vents is larger than a specific value.
In one embodiment, when the gas distribution amount of the central region of the wafer is required to be smaller than that of the edge region, the ratio of the number of open vents to the sum of the number of vents is smaller than a specific value.
Drawings
FIG. 1 is a cross-sectional view of an air intake device of the present invention;
FIG. 2 is a cross-sectional view of an air intake device along the AA' direction in an embodiment of the invention;
fig. 3 is a cross-sectional view of an air intake device along AA' in another embodiment of the invention.
In the figure: 10. an air inlet; 101. a first air inlet; 102. a second air inlet; 20. a vent; 201. a first vent; 202. a second vent; 30. a bottom baffle; 301. a first through hole; 40. a top baffle; 401. a second through hole; 50. a partition wall.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. These embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", etc., are based on the methods or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In one embodiment, as shown in fig. 1to 3, an air intake device is provided, including: an inlet 10 provided at a side of the air inlet means for inputting air into the air inlet means; a top baffle 40 disposed on top of the air intake device; a bottom baffle 30 disposed at the bottom of the air intake device; the partition wall 50 is disposed inside the air inlet device and is used for separating the central area and the edge area of the air inlet device, and an air vent is disposed on the partition wall 50.
In this embodiment, the air inlet device can realize different air inlet rates of the wafer center region and the wafer edge region, and different gas distribution amounts of the wafer center region and the wafer edge region, so as to realize different reaction rates of the wafer center region and the wafer edge region.
In one embodiment, the gas inlet means is located above the wafer within the chamber. The chamber comprises a reaction chamber.
In one embodiment, the shape of the top view of the air inlet means comprises a circle, the air inlet means at least covering the wafer.
In one embodiment, the vents 20 are offset from the intake 10.
In one embodiment, as shown in FIG. 3, the air inlet 10 includes a first air inlet 101 opposite the air port 20 and a second air inlet 102 offset from the air port 20.
In one embodiment, the air inlet control module is further included for controlling the opening/closing of the first air inlet 101 and the second air inlet 102, respectively, and when the first air inlet 101 is opened and the second air inlet 102 is closed, the gas distribution amount in the central area of the air inlet device is larger than the gas distribution amount in the edge area; when the first gas inlet 101 is closed and the second gas inlet 102 is opened, the gas distribution amount in the central region of the gas inlet means is smaller than that in the edge region; when the first gas inlet 101 and the second gas inlet 102 are opened, the gas distribution amount in the center region of the gas inlet means is equal to the gas distribution amount in the edge region. The air inlet control module can control the opening/closing of the first air inlet 101 and the second air inlet 102 in real time according to the requirement, so that the real-time switching between the three states that the reaction rate of the central area of the wafer is greater than that of the edge area of the wafer, the reaction rate of the central area of the wafer is smaller than that of the edge area of the wafer, and the reaction rate of the central area of the wafer is equal to that of the edge area of the wafer can be realized.
In one embodiment, the first air inlet 101 is connected to the air inlet device through a first air inlet pipeline, and a first air inlet valve is arranged on the first air inlet pipeline; the second air inlet 102 is connected with an air inlet device through a second air inlet pipeline, a second air inlet valve is arranged on the second air inlet pipeline, the air inlet control module respectively controls the opening and closing of the first air inlet valve and the second air inlet valve, the first air inlet 101 is in air when the first air inlet valve is opened, and the first air inlet 101 is out of air when the first air inlet valve is closed; the second intake port 102 is intake when the second intake valve is opened, and the second intake port 102 is not intake when the second intake valve is closed.
In one embodiment, the vent 20 includes a first vent 201 facing the air inlet 10 and a second vent 202 offset from the air inlet 10, as shown in fig. 2.
In one embodiment, the air inlet device further comprises a first ventilation control module for controlling the opening/closing of the first air vent 201 and the second air vent 202 respectively, wherein when the first air vent 201 is opened and the second air vent 202 is closed, the air distribution amount of the central area of the air inlet device is larger than the air distribution amount of the edge area; when the first vent 201 is closed and the second vent 202 is opened, the gas distribution amount in the center region of the gas inlet device is smaller than that in the edge region; when the first vent 201 and the second vent 202 are opened, the gas distribution amount in the center region of the gas intake device is equal to the gas distribution amount in the edge region. The first ventilation control module can control the opening/closing of the first ventilation opening 201 and the second ventilation opening 202 in real time according to the requirement, so that the real-time switching between the three states that the reaction rate of the central area of the wafer is greater than that of the edge area of the wafer, the reaction rate of the central area of the wafer is less than that of the edge area of the wafer, and the reaction rate of the central area of the wafer is equal to that of the edge area of the wafer can be realized.
In one embodiment, the number of layers of the partition wall 50 includes one layer.
In one embodiment, the partition 50 comprises an annular partition 50.
In one embodiment, the thickness of the partition wall 50 is between 0.1mm and 10mm, for example, the thickness of the partition wall 50 may be 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1mm, 2mm, 5mm, 8mm, 10mm.
In one embodiment, the ratio of the horizontal distance between the partition wall 50 and the air inlet 10to the radius of the wafer is 1/10 to 9/10, for example, the ratio of the horizontal distance between the partition wall 50 and the air inlet 10to the radius of the wafer may be 1/10, 2/10, 3/10, 5/10, 8/10, 9/10.
In one embodiment, the number of vents 20 is twice that of the air inlets 10.
In one embodiment, the shape of the vent 20 includes one or a combination of several of a circle, a rectangle, a triangle, and a bar, and may be any other geometric shape. The vents 20 are uniformly and centrally symmetrically arranged.
In one embodiment, the opening direction of the vent 20 is directed toward the center of the air intake device.
In one embodiment, the angle between the direction from the position of the air vent 20 toward the center of the air intake device and the direction of the opening of the air vent 20 is greater than 0 degrees and less than or equal to 90 degrees, for example, the angle between the direction from the position of the air vent 20 toward the center of the air intake device and the direction of the opening of the air vent 20 may be 10 degrees, 15 degrees, 30 degrees, 45 degrees, 60 degrees, 80 degrees, 90 degrees.
In one embodiment, the shape of the vent 20 comprises a circle, and the diameter of the vent 20 is between 0.1mm and 10mm, for example, the diameter of the vent 20 may be 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1mm, 2mm, 5mm, 8mm, 10mm.
In one embodiment, the number of layers of the partition wall 50 is greater than or equal to two, so that the gas distribution amounts at different positions of the wafer can be more accurately adjusted.
In one embodiment, the air inlet device further comprises a second ventilation control module for controlling the cross-sectional area of the air inlet 20, and when the ratio of the cross-sectional area of the air inlet 20 to the area of the partition wall 50 is greater than a preset value, the gas distribution amount in the central area of the air inlet device is greater than the gas distribution amount in the edge area; when the cross-sectional area of the vent 20 and the area of the partition wall 50 are less than a predetermined value, the gas distribution amount in the central region of the gas inlet device is less than that in the peripheral region.
In one embodiment, the air inlet device further comprises a third ventilation control module for controlling the opening quantity of the air vents 20, and when the ratio of the opening quantity of the air vents 20 to the sum of the quantity of the air vents 20 is greater than a specific value, the gas distribution quantity of the central area of the air inlet device is greater than the gas distribution quantity of the edge area; when the ratio of the number of open vents 20 to the sum of the number of vents 20 is less than a specific value, the gas distribution amount in the central region of the gas inlet device is less than the gas distribution amount in the edge region.
In one embodiment, the air inlet 10 may be plural.
In one embodiment, the intake port 10 is oriented toward the center of the intake device.
In another embodiment, the angle between the direction from the position of the air intake port 10 toward the center of the air intake device and the direction of the air intake port 10 is greater than 0 degrees and less than or equal to 90 degrees, for example, the angle between the direction from the position of the air intake port 10 toward the center of the air intake device and the direction of the air intake port 10 may be 10 degrees, 15 degrees, 30 degrees, 45 degrees, 60 degrees, 80 degrees, 90 degrees.
In one embodiment, the air inlets 10 are arranged in a central symmetry manner, and the number of the air inlets 10 is greater than or equal to 3.
In one embodiment, the number of air inlets 10 is between 4 and 16.
In one embodiment, the bottom baffle 30 includes a number of first through holes 301. The plurality of first through holes 301 may be uniformly distributed or unevenly distributed, and have a central symmetry, and the shape of the bottom baffle 30 includes a circular shape.
In one embodiment, the aperture of the first through hole 301 is between 0.1mm and 50mm, for example, the aperture of the first through hole 301 may be 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1mm, 2mm, 5mm, 8mm, 10mm, 20mm, 30mm, 40mm, 50mm.
In one embodiment, the bottom baffle 30 covers at least the wafer.
In one embodiment, the upper part of the air intake means comprises a top air intake 10. The reaction rate of the center region of the wafer and the edge region of the wafer can be further adjusted by the top gas inlet 10.
In one embodiment, the top baffle 40 includes a number of second through holes 401. The second through holes 401 may be uniformly distributed or unevenly distributed, and have a central symmetry, and the shape of the top baffle 40 includes a circular shape.
In one embodiment, the thickness of the bottom baffle 30 is between 0.1mm and 100mm, for example, the thickness of the bottom baffle 30 may be 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1mm, 2mm, 5mm, 8mm, 10mm, 20mm, 30mm, 50mm, 80mm, 100mm. The thickness of the top baffle 40 is between 0.1mm and 100mm, for example, the thickness of the top baffle 40 may be 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1mm, 2mm, 5mm, 8mm, 10mm, 20mm, 30mm, 50mm, 80mm, 100mm. The aperture of the second through hole 401 is between 0.1mm and 50mm, for example, the aperture of the second through hole 401 may be 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1mm, 2mm, 5mm, 8mm, 10mm, 20mm, 30mm, 40mm, 50mm.
In one embodiment, an air intake method is provided, and the air intake device is used for performing air intake operation on the cavity.
In this embodiment, the air inlet method can realize different air inlet rates of the wafer center area and the wafer edge area, and different air distribution amounts of the wafer center area and the wafer edge area, so that different reaction rates of the wafer center area and the wafer edge area are realized.
In one embodiment, the gas inlet 10 includes a first gas inlet 101 opposite to the gas vent 20 and a second gas inlet 102 offset from the gas vent 20, and further includes a gas inlet control module for controlling the opening/closing of the first gas inlet 101 and the second gas inlet 102, respectively, and opening the first gas inlet 101 and closing the second gas inlet 102 when the gas distribution amount in the central region of the wafer is required to be greater than that in the edge region; when the gas distribution amount of the central area of the wafer is required to be smaller than that of the edge area, the first gas inlet 101 is closed and the second gas inlet 102 is opened; when the gas distribution amount in the center region of the wafer is required to be equal to that in the edge region, the first gas inlet 101 and the second gas inlet 102 are opened.
In one embodiment, the vent 20 includes a first vent 201 facing the air inlet 10 and a second vent 202 offset from the air inlet 10, and a first vent control module for controlling the opening/closing of the first vent 201 and the second vent 202, respectively.
In one embodiment, when it is desired that the gas distribution amount in the center region of the wafer is greater than the gas distribution amount in the edge region, the first vent 201 is opened and the second vent 202 is closed.
In one embodiment, when the gas distribution in the center region of the wafer is required to be smaller than the gas distribution in the edge region, the first vent 201 is closed and the second vent 202 is opened.
In one embodiment, the first vent 201 and the second vent 202 are opened when the gas distribution amount in the center region of the wafer is required to be equal to the gas distribution amount in the edge region.
In one embodiment, the vents are offset from the gas inlet 10 and the gas distribution in the center region of the wafer is less than the gas distribution in the edge regions.
In one embodiment, when it is desired to increase the difference between the gas distribution in the center region and the gas distribution in the edge region of the wafer, the gas inlet rate of the gas inlet 10 is increased; when it is desired to reduce the difference between the gas distribution amount in the center region and the gas distribution amount in the edge region of the wafer, the gas inlet rate of the gas inlet 10 is reduced.
In one embodiment, the intake rate of the intake port 10 is between 0.1m/s and 300m/s, for example, the intake rate of the intake port 10 may be 0.1m/s, 1m/s, 10m/s, 30m/s, 50m/s, 100m/s, 150m/s, 200m/s, 250m/s, 300m/s.
In one embodiment, when it is desired to increase the difference between the gas distribution in the center region and the gas distribution in the edge region of the wafer, the pressure in the chamber is reduced; when it is desired to reduce the difference between the gas distribution in the center region and the gas distribution in the edge region of the wafer, the pressure in the chamber is increased.
In one embodiment, the pressure in the chamber is between 0.1Torr and 10Torr, for example, the pressure in the chamber may be 0.1Torr, 1Torr, 2Torr, 5Torr, 8Torr, 10Torr.
In one embodiment, a second vent control module is also included for controlling the cross-sectional area of the vent 20.
In one embodiment, when it is desired that the gas distribution in the center region of the wafer is greater than the gas distribution in the edge region, the ratio of the cross-sectional area of the vent 20 to the area of the partition wall 50 is greater than a predetermined value.
In one embodiment, when the gas distribution in the center region of the wafer is required to be smaller than the gas distribution in the edge region, the ratio of the cross-sectional area of the vent 20 to the area of the partition wall 50 is smaller than a predetermined value.
In one embodiment, a third vent control module is also included for controlling the number of openings of the vents 20.
In one embodiment, when it is desired that the gas distribution amount of the center region of the wafer is greater than the gas distribution amount of the edge region, the ratio of the number of open vents 20 to the sum of the number of vents 20 is greater than a specific value.
In one embodiment, when it is desired that the gas distribution amount in the center region of the wafer is smaller than the gas distribution amount in the edge region, the ratio of the number of open vents 20 to the sum of the number of vents 20 is smaller than a specific value.
The air inlet device and the air inlet method can be applied to semiconductor equipment of processes such as plasma etching, semiconductor film deposition, plasma photoresist removal and the like.
Plasma etching: in a typical plasma etch process, different combinations of process gases (e.g., cxFy, O 2 Ar, etc.) are subjected to Radio frequency excitation in a Radio frequency (Radio frequency) environment to form a plasma. The formed plasma is subjected to physical bombardment and chemical reaction with the surface of the wafer under the action of the electric fields of the upper electrode and the lower electrode of the etching cavity, so that the processing procedures of designing patterns and key processes on the surface of the wafer are completed. Typical etch chambers include both capacitively Coupled Chambers (CCP) and inductively coupled chambers (ICP).
Depositing a semiconductor film: thin film deposition is an indispensable link in the integrated circuit manufacturing process, and the traditional thin film deposition process mainly comprises vapor deposition processes such as PVD, CVD and the like. CVD (chemical vapor deposition): mainly uses one or several gas phase compounds or simple substances containing film elements to make chemical reaction on the surface of substrate so as to produce film. The CVD method can produce thin film materials including metals other than alkali and alkaline earth metals (Ag, au), carbides, nitrides, borides, oxides, sulfides, selenides, tellurides, metal compounds, alloys, and the like.
Plasma photoresist removal: a plasma stripper is an apparatus for removing surface materials using a plasma technique. Photoresist stripping is a surface treatment technique used to remove residual photoresist on the wafer surface and provide a clean wafer surface for subsequent processing. The principle of the plasma photoresist remover is that plasma is generated by discharge and is introduced into a photoresist removing area, and organic matters on the surface of a material react with the activated plasma to be oxidized and decomposed into gas, so that the purpose of removing photoresist on the surface of a wafer is achieved. For example, in the reaction chamber of the plasma photoresist stripper, O may be introduced through the air inlet 10 by the air inlet device 2 、N 2 Or N 2 、H 2 When adjusting the gas distribution of the edge area of the central area of the wafer, the top gas inlet 10 can also be introduced with He or N 2 、O 2 、H 2 And the gases are combined to adjust the gas distribution quantity of the edge area of the central area of the wafer, so that the photoresist removing rate of the central area and the edge area of the wafer is adjusted.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention, which are described in greater detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of the invention should be assessed as that of the appended claims.
Claims (15)
1. An air intake device, characterized by comprising:
the air inlet is arranged at the side edge of the air inlet device and is used for inputting air into the air inlet device;
the top baffle plate is arranged at the top of the air inlet device;
the bottom baffle plate is arranged at the bottom of the air inlet device;
the partition wall is arranged in the air inlet device and used for separating the central area and the edge area of the air inlet device, and an air vent is arranged on the partition wall.
2. The gas inlet device of claim 1, wherein the gas inlet device is positioned above a wafer within the chamber, the top view of the gas inlet device comprises a circular shape, the gas inlet device covers at least the wafer, and the bottom baffle covers at least the wafer.
3. The air intake device of claim 1, wherein the air ports are arranged offset from the air inlet ports.
4. The air inlet device according to claim 1, wherein the air inlet comprises a first air inlet opposite to the air inlet and a second air inlet offset from the air inlet, and further comprising an air inlet control module for controlling opening/closing of the first air inlet and the second air inlet, respectively, wherein when the first air inlet is opened and the second air inlet is closed, the air distribution amount in a central area of the air inlet device is larger than that in an edge area; when the first air inlet is closed and the second air inlet is opened, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area; when the first air inlet and the second air inlet are opened, the gas distribution amount of the central area of the air inlet device is equal to the gas distribution amount of the edge area.
5. The air inlet device according to claim 1, wherein the air inlet comprises a first air inlet opposite to the air inlet and a second air inlet offset from the air inlet, and further comprising a first air inlet control module for controlling opening/closing of the first air inlet and the second air inlet, respectively, wherein when the first air inlet is opened and the second air inlet is closed, the air distribution amount of the central area of the air inlet device is larger than the air distribution amount of the edge area; when the first air port is closed and the second air port is opened, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area; when the first air port and the second air port are opened, the gas distribution amount of the central area of the air inlet device is equal to the gas distribution amount of the edge area.
6. The air inlet device according to claim 1, wherein the number of layers of the partition wall is one layer or the number of layers of the partition wall is greater than or equal to two layers, the partition wall comprises an annular partition wall, the shape of the air vent comprises one or a combination of a plurality of circular shape, rectangular shape, triangular shape and strip shape, the shape of the air vent comprises a circular shape, the diameter of the air vent is between 0.1mm and 10mm, the air inlets are arranged in a central symmetry manner, the number of the air inlets is greater than or equal to 3, the bottom baffle comprises a plurality of first through holes, and the aperture of the first through holes is between 0.1mm and 50mm.
7. The air inlet device according to claim 1, further comprising a second ventilation control module for controlling a cross-sectional area of the ventilation opening, wherein when a ratio of the cross-sectional area of the ventilation opening to the area of the partition wall is greater than a preset value, a gas distribution amount in a central region of the air inlet device is greater than a gas distribution amount in an edge region; when the cross-sectional area of the air vent and the ratio of the cross-sectional area to the area of the partition wall are smaller than a preset value, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area.
8. The air inlet device according to claim 1, further comprising a third ventilation control module for controlling the number of openings of the air inlet device, wherein when the ratio of the number of openings of the air inlet device to the sum of the number of openings of the air inlet device is greater than a specific value, the gas distribution amount in the central area of the air inlet device is greater than the gas distribution amount in the edge area; when the ratio of the number of the openings of the air vents to the sum of the number of the air vents is smaller than a specific value, the gas distribution amount of the central area of the air inlet device is smaller than that of the edge area.
9. The air intake device of claim 1, wherein the air intake device includes a top air intake above the air intake device, and wherein the top baffle includes a plurality of second through holes.
10. An air intake method, characterized in that an air intake operation is performed on a chamber by using the air intake device according to any one of claims 1to 9.
11. The gas inlet method according to claim 10, wherein the gas inlet includes a first gas inlet facing the gas vent and a second gas inlet offset from the gas vent, and further comprising a gas inlet control module for controlling opening/closing of the first gas inlet and the second gas inlet, respectively, and opening the first gas inlet and closing the second gas inlet when a gas distribution amount in a center region of the wafer is required to be greater than a gas distribution amount in an edge region; when the gas distribution amount of the central area of the wafer is required to be smaller than that of the edge area, closing the first gas inlet and opening the second gas inlet; when the gas distribution amount of the central area of the wafer is required to be equal to that of the edge area, the first gas inlet and the second gas inlet are opened.
12. The method of claim 10, wherein the vent comprises a first vent opposite the gas inlet and a second vent offset from the gas inlet, and further comprising a first vent control module for controlling opening/closing of the first and second vents, respectively, the first vent being opened and the second vent being closed when a greater amount of gas distribution in a center region of the wafer than in an edge region is desired; when the gas distribution amount of the central area of the wafer is required to be smaller than that of the edge area, closing the first vent and opening the second vent; when the gas distribution amount of the central area of the wafer is required to be equal to that of the edge area, the first vent and the second vent are opened.
13. The gas inlet method according to claim 10, wherein the gas inlet and the gas outlet are arranged in a staggered manner, the gas distribution amount of the central area of the wafer is smaller than that of the edge area, and when the difference between the gas distribution amount of the central area of the wafer and that of the edge area needs to be increased, the gas inlet rate of the gas inlet is increased or the pressure in the chamber is reduced; when the difference between the gas distribution amount of the central area and the gas distribution amount of the edge area of the wafer needs to be reduced, the gas inlet rate of the gas inlet is reduced or the pressure in the chamber is increased.
14. The method of claim 10, further comprising a second vent control module for controlling a cross-sectional area of the vent, the cross-sectional area of the vent being greater than a predetermined value when a gas distribution in a center region of the wafer is desired to be greater than a gas distribution in an edge region; when the gas distribution amount of the central area of the wafer is required to be smaller than that of the edge area, the ratio of the cross section area of the air vent to the area of the partition wall is smaller than a preset value.
15. The method of claim 10, further comprising a third vent control module for controlling an amount of openings of the vents, the ratio of the amount of openings of the vents to the sum of the amounts of the vents being greater than a specified value when a greater amount of gas distribution in a center region of the wafer than in an edge region is desired; when the gas distribution amount of the central area of the wafer is required to be smaller than that of the edge area, the ratio of the opening number of the air vents to the sum of the number of the air vents is smaller than a specific value.
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