CN111180308A - Gas diffuser and method for processing semiconductor product - Google Patents
Gas diffuser and method for processing semiconductor product Download PDFInfo
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- CN111180308A CN111180308A CN201811330938.4A CN201811330938A CN111180308A CN 111180308 A CN111180308 A CN 111180308A CN 201811330938 A CN201811330938 A CN 201811330938A CN 111180308 A CN111180308 A CN 111180308A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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Abstract
The invention provides a gas diffuser and a method for processing semiconductor products, wherein the gas diffuser comprises an inner ring diffusion isolation ring, and the inner side of the inner ring diffusion isolation ring comprises a central gas diffusion area; the outer ring diffusion isolation ring is positioned on the outer side of the inner ring diffusion isolation ring, and the part between the inner ring diffusion isolation ring and the outer ring diffusion isolation ring comprises an edge gas diffusion area; the gas guiding part comprises at least one inner ring gas guiding part positioned in the central gas diffusion area and at least one outer ring gas guiding part positioned in the edge gas diffusion area, and can uniformly guide etching gas to a plurality of central shunt gas outlets and a plurality of edge shunt gas outlets. Thereby achieving uniform diffusion of gas from the gas diffuser to the wafer. Therefore, the problem of uneven wafer line width formed by etching due to uneven distribution of etching gas above the wafer in the prior art is effectively solved, and the yield is greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductor etching machines, in particular to a gas diffuser and a processing method of a semiconductor product.
Background
In the preparation process of semiconductor products, an etching technology which takes gas as a medium is adopted in dry etching. In the dry etching process in the prior art, etching gas is dispersed to different shunt gas outlets through a shunt gas inlet on a gas diffuser, and then sprayed to the surface of a wafer to etch the surface of the wafer.
However, the gas diffuser in the prior art has many defects and shortcomings, for example, according to the diffusion principle, the farther the gas inlet is located from each gas inlet of the gas diffuser, the smaller the gas flow rate is, and the slower the gas flow rate is, so that the gas diffuser in the prior art may cause the uneven distribution of the etching gas above the wafer to be processed, and further may cause the uneven line width of the wafer formed by etching;
uneven diffusion of the gas in the forward process can cause uneven line width obtained by etching, and further cause uneven line width of the wafer in the next station;
non-uniform line widths can cause wafer defects, leading to yield loss.
Disclosure of Invention
Embodiments of the present invention provide a gas diffuser and a method for processing semiconductor products to solve one or more of the above technical problems of the prior art.
According to a first aspect, embodiments of the present invention provide a gas diffuser comprising an inner ring diffusion spacer ring, the inner side of the inner ring diffusion spacer ring comprising a central gas diffusion zone comprising at least one central flow splitting gas inlet and a plurality of central flow splitting gas outlets;
the outer ring diffusion isolation ring is positioned on the outer side of the inner ring diffusion isolation ring, the part between the inner ring diffusion isolation ring and the outer ring diffusion isolation ring comprises an edge gas diffusion area, and the edge gas diffusion area comprises at least one edge shunt gas inlet and a plurality of edge shunt gas outlets;
a gas guide including at least one inner ring gas guide located at the central gas diffusion region and at least one outer ring gas guide located at the edge gas diffusion region, wherein each of the inner ring gas guides the gas flowing in from the central split gas inlet port to the plurality of central split gas outlets at the same distance, and each of the outer ring gas guides the gas flowing in from the edge split gas inlet port to the plurality of edge split gas outlets at the same distance.
As described above, the gas diffuser has the inner diffusion barrier ring and the outer diffusion barrier ring, so that the gas between the central gas diffusion region and the edge gas diffusion region is not mixed together, and the gas distributed to the central gas diffusion region and the edge gas diffusion region of the gas diffuser is uniform, thereby preparing for the next step of spraying uniform gas onto the wafer.
Optionally, the gas diffuser further comprises an edge-most gas diffusion region located outside the outer ring diffusion spacer ring, the edge-most gas diffusion region comprising an edge-most flow-splitting gas inlet and a plurality of edge-most flow-splitting gas outlets.
Optionally, each inner ring gas guide part comprises an inner ring gas main channel and a first inner ring branch channel and a second inner ring branch channel, the first inner ring branch channel and the second inner ring branch channel are positioned at two ends of the inner ring gas main channel and are respectively communicated with the inner ring gas main channel through an inner ring connecting part at the middle part;
the central shunting gas inlet is positioned in the middle part of the inner ring gas main channel, and the end parts of the first inner ring branch channel and the second inner ring branch channel are respectively communicated with the central shunting gas outlet.
Because the distance between each central shunting gas outlet and the central shunting gas inlet communicated with the central shunting gas outlet is equal, the etching gas passing through the central shunting gas inlet can uniformly flow to each central shunting gas inlet and further uniformly sprayed to the surface of the wafer.
Optionally, each of the outer ring gas guides includes an outer ring gas main channel and first and second outer ring branch channels, the first and second outer ring branch channels are located at two ends of the outer ring gas main channel and are respectively communicated with the outer ring gas main channel through an outer ring connecting portion at a middle portion;
the edge shunting gas inlet is positioned in the middle of the outer ring gas main channel, and the end parts of the first outer ring branch channel and the second outer ring branch channel are respectively communicated with the edge shunting gas outlet.
Because the distance between each edge shunt gas outlet and the edge shunt gas inlet communicated with the edge shunt gas outlet is equal, the etching gas passing through the edge shunt gas inlet can uniformly flow to each edge shunt gas inlet, and then is uniformly sprayed to the surface of the wafer.
Optionally, the inner ring gas main passage, the first inner ring gas branch passage and the second inner ring gas branch passage comprise a circular arc configuration.
Optionally, the outer ring gas main passage, the first outer ring gas branch passage and the second outer ring gas branch passage comprise a circular arc configuration.
According to a second aspect, embodiments of the present invention provide a semiconductor product processing method, comprising the steps of: providing a gas diffuser according to the first aspect of the invention;
the etching gas is shunted to the gas diffuser through the diverter, and the gas diffuser uniformly diffuses the etching gas to the surface of the wafer to etch the wafer;
the splitter splits the etching gas into a central gas diffusion area and an edge gas diffusion area of the gas diffuser respectively, and a central split gas inlet of the central gas diffusion area uniformly disperses the etching gas to a central area of the surface of the wafer through a central split gas outlet; and the etching gas is uniformly dispersed to the edge area of the surface of the wafer through the edge shunting gas outlet by the central shunting gas inlet of the edge gas diffusion area.
Optionally, the gas diffuser further includes an edge-most gas diffusion region, the edge-most gas diffusion region includes an edge-most flow distribution gas inlet and a plurality of edge-most flow distribution gas outlets, the flow distributor distributes the etching gas to the edge-most gas diffusion region, and the edge-most flow distribution gas inlet uniformly distributes the etching gas to an edge-most region of the wafer surface through the edge-most flow distribution gas outlets.
Optionally, each inner ring gas guide part comprises an inner ring gas main channel and a first inner ring branch channel and a second inner ring branch channel, the first inner ring branch channel and the second inner ring branch channel are positioned at two ends of the inner ring gas main channel and are respectively communicated with the inner ring gas main channel through an inner ring connecting part at the middle part;
the central shunting gas inlet is positioned in the middle part of the inner ring gas main channel, and the end parts of the first inner ring branch channel and the second inner ring branch channel are respectively communicated with the central shunting gas outlet.
Optionally, each of the outer ring gas guides includes an outer ring gas main channel and first and second outer ring branch channels, the first and second outer ring branch channels are located at two ends of the outer ring gas main channel and are respectively communicated with the outer ring gas main channel through an outer ring connecting portion at a middle portion;
the edge shunting gas inlet is positioned at the middle part of the outer ring gas main channel, and the end parts of the first outer ring branch channel and the second outer ring branch channel are respectively communicated with the edge shunting gas outlet
Optionally, the inner ring gas main passage, the first inner ring gas branch passage and the second inner ring gas branch passage comprise a circular arc configuration.
Optionally, the outer ring gas main passage, the first outer ring gas branch passage and the second outer ring gas branch passage comprise a circular arc configuration.
The gas diffuser and the semiconductor processing method provided by the invention have the following effects:
1. gas diffuser's central gas diffusion district, marginal gas diffusion district and marginal diffusion district all include reposition of redundant personnel gas inlet and export, still including the gaseous guide portion of intercommunication reposition of redundant personnel gas inlet and export, etching gas follows reposition of redundant personnel gas inlet warp the guide of gaseous guide portion to gas outlet, because gas outlet equals apart from the distance of reposition of redundant personnel gas inlet, consequently the velocity of flow and the flow through every gas outlet are the same, have improved the homogeneity that gas sprays.
2. When the gas diffuser is used for etching the wafer, the etching gas can be sprayed on the surface of the wafer more uniformly. Therefore, the wire diameter of the surface of the wafer is more uniform, and the yield of products is improved. Further, the economic loss caused by low product yield can be reduced.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
fig. 1 is a schematic view showing an operation state of a gas diffuser in the related art.
Fig. 2 is a schematic top view of a prior art gas diffuser.
Fig. 3 and 4 are schematic diagrams illustrating an over-etching due to an over-narrow line width and an under-etching due to an over-wide line width, respectively, in a gas diffuser of the prior art.
FIG. 5 is a schematic top view of a gas diffuser structure according to the present invention.
Fig. 6 is a schematic view showing an operation state of the gas diffuser of the present invention.
FIG. 7 shows a flow chart of a method for manufacturing a semiconductor according to the present invention.
Reference numerals
1 gas line
2 shunt
3 center of gas diffuser
4 edge of gas diffuser
5 outermost edge of gas diffuser
6 gas diffuser
7 center gas inlet
8 edge gas inlet
9 marginal gas inlet
03 overetching defect
04 deficiency of insufficient etching
11 gas pipeline
12 flow divider
13 central gas diffusion zone
14 edge gas diffusion zone
15 marginal gas diffusion zone
16 gas diffuser
17 center flow-dividing gas inlet
18 edge split gas inlet
19 gas inlet of extreme edge shunt
21 inner ring diffusion isolation ring
22 outer ring diffusion isolation ring
23 center split gas outlet
24 edge split gas outlet
25 outermost edge diversion gas outlet
26 inner ring gas guide
260 inner ring gas main channel
261 first inner branch channel
262 second inner race branch passage
263 inner ring connecting part
27 outer ring gas guide part
270 outer ring gas main channel
271 first outer ring branch channel
272 second outer ring branch channel
273 outer ring connecting part
W wafer
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 and 2, in the conventional semiconductor dry etching apparatus, gas flows from a gas pipe 1, is collected in a flow divider 2, is divided into a Center 3/Edge 4/Edge 5(Center/Edge/Very Edge) of a gas diffuser through a Center gas inlet 7, an Edge gas inlet 8 and an Edge-most gas inlet 9, respectively, according to a tool setting, and is sprayed onto a wafer W through the gas diffuser 6.
Referring to fig. 3 and 4, it is shown that in the case of the prior art gas diffuser, the gas diffused to the wafer through the diffuser is not uniform enough, which results in non-uniform feature sizes formed on the wafer, and in the case of a large CD, it is easy to cause a defect 03 that is over-etched, and in the case of a small CD, it results in a defect 04 that is under-etched.
Example one
The embodiment provides a gas diffuser, in particular to a gas diffuser suitable for a semiconductor dry etching device.
The invention improves the gas diffuser, including but not limited to the improvement of the uniformity of the etching line width of the wafer by various semiconductor machines, and simultaneously, the invention also improves a novel gas diffuser to ensure that the uniformity of the line width obtained by spraying gas on the wafer is better, and can avoid the poor uniformity of the line width of the wafer and the defects caused by the poor uniformity of the line width due to the non-uniform gas diffusion in the etching process of the wafer. The improved gas diffuser can improve the yield of wafer products.
Referring to fig. 5, an embodiment of the present invention provides a gas diffuser 16 comprising an inner diffusion barrier ring 21 and an outer diffusion barrier ring 22 located outside said inner diffusion barrier ring 21, the inner side of the inner diffusion barrier ring 21 comprising a central gas diffusion zone 13, the central gas diffusion zone 13 comprising at least one central split gas inlet 17 and a plurality of central split gas outlets 23. The portion between the inner diffusion barrier ring 21 and the outer diffusion barrier ring 22 comprises an edge gas diffusion zone 14, and the edge gas diffusion zone 14 comprises at least one edge-split gas inlet 18 and a plurality of edge-split gas outlets 24.
The gas diffuser 16 of the present embodiment further comprises a gas guide portion including at least one inner ring gas guide portion 26 located at the central gas diffusion region 13 and at least one outer ring gas guide portion 27 located at the edge gas diffusion region, wherein each inner ring gas guide portion 26 guides the gas flowing in from the central split gas inlet 17 to the plurality of central split gas outlets 23 at the same distance, and each outer ring gas guide portion 27 guides the gas flowing in from the edge split gas inlet 18 to the plurality of edge split gas outlets (24) at the same distance.
As described above, in the gas diffuser of the present embodiment, the center branch gas inlet and the edge branch gas inlet both branch the etching gas to the center branch gas outlet and the edge branch gas outlet, respectively, at the same distance. Thus, the flow rate and flow rate of the gas flowing into each of the center-split gas outlets or the edge-split gas outlets are the same, i.e., the etching gas reaching the wafer surface is uniform. Therefore, etching defects such as underetching or overetching, which occur due to unevenness of the etching gas on the surface of the wafer, do not occur.
In a further embodiment of this embodiment, the gas diffuser 16 further comprises an edge-most gas diffusion region 15 located outside the outer diffusion spacer 22, the edge-most gas diffusion region 15 comprising an edge-most flow-splitting gas inlet 19 and a plurality of edge-most flow-splitting gas outlets 25.
As shown in fig. 5, the inner ring gas guide portion of the gas diffusion device 16 of the present embodiment includes an inner ring gas main passage 260 and first and second inner ring branch passages 261 and 262, the first and second inner ring branch passages 261 and 262 being located at both ends of the inner ring gas main passage 260 and communicating with the inner ring gas main passage 260 through inner ring connecting portions 263 at intermediate portions, respectively;
the center-split gas inlet 17 is located in the middle portion of the inner ring gas main passage 260, and the ends of the first inner ring branch passage 261 and the second inner ring branch passage 262 are respectively communicated with the center-split gas outlet 23.
As also shown in fig. 5, each of the outer ring gas guide portions 27 of the gas diffusion device 16 of the present embodiment includes an outer ring gas main passage 270 and first and second outer ring branch passages 271, 272, the first and second outer ring branch passages 271, 272 being located at both ends of the outer ring gas main passage 270 and communicating with the outer ring gas main passage 270 through an outer ring connecting portion 273, respectively, at a middle portion;
the edge diversion gas inlet 18 is located in the middle portion of the outer ring gas main passage 270, and the ends of the first outer ring branch passage 271 and the second outer ring branch passage 272 are respectively communicated with the edge diversion gas outlet 24.
As described above, by designing the inner ring gas main passage, the first and second inner ring gas branch passages, the inner ring connecting portion, the outer ring gas main passage, the first and second outer ring gas branch passages, and the outer ring connecting portion, it can be ensured that the distances between the inner ring split gas outlets and the inner ring split gas inlets are equal, and the distances between the outer ring separated gas outlets and the outer ring split gas inlets are equal. In order to ensure that the gas flow to each gas outlet is uniform.
In a further embodiment of this embodiment, the inner ring gas main passage and the first and second inner ring gas branch passages are designed in a circular arc shape.
In another further embodiment of this embodiment, the outer ring gas main passage and the first and second outer ring gas branch passages are designed in a circular arc shape.
The circular arc design of the gas channel can be better adapted to the shape and structure of the gas diffuser.
The gas diffuser in this embodiment improves the gas outflow manner, improves the uniformity of gas diffusion, further provides uniform etching gas to the wafer surface, can effectively improve the wafer yield, and avoids the poor wafer yield caused by the conventional gas diffusion manner. Moreover, the phenomenon that the line width of the etched wafer exceeds a preset range and the wafer yield loss caused by the line width of the etched wafer due to uneven diffusion gas in the prior art are avoided.
In a further embodiment of the present embodiment, provision can be made for one inner ring gas guide and one outer ring gas guide to be provided in the gas diffuser, respectively.
Specifically, referring to fig. 5, the inner ring gas main passage 260 of the inner ring gas guide 26 is provided in the central gas diffusion area 13 of the gas diffuser in the form of a semicircular arc, and one central divided gas inlet 17 of the central gas diffusion area 13 is provided at an intermediate position of the inner ring gas main passage 260. Inner ring gas connecting portions 263 are respectively provided at both ends of the inner ring gas main passage 260 along the radial direction of the semicircular arc where the inner ring gas main passage 260 is located. A first inner ring gas branch passage 261 and a second inner ring gas branch passage 262 communicating therewith are provided on the inner ring gas connecting portions 263 at both ends of the inner ring gas main passage 260, respectively. The first inner ring gas branch passage 261 and the second inner ring gas branch passage 262 are provided in a circular arc shape extending to both sides with the inner ring connecting portion 263 as a center, and in this embodiment, the first and second inner ring gas branch passages are defined to be 1/4 circular arcs, respectively. And the end parts of the first inner ring gas branch channel and the second inner ring gas branch channel are respectively provided with a central flow-dividing gas outlet.
Also, in the present embodiment, the outer ring gas main passage 270 of the outer ring gas guide 27 is provided in the edge gas diffusion region 14 of the gas diffuser in the form of a semicircular arc, and one edge branch gas inlet 18 of the edge gas diffusion region 14 is provided at an intermediate position of the outer ring gas main passage 270. Outer ring gas connection portions 273 are provided at both ends of the outer ring gas main passage 270 in the radial direction of the semicircular arc in which the outer ring gas main passage 270 is located. A first outer ring gas branch passage 271 and a second outer ring gas branch passage 272 communicating with the outer ring gas connecting portion 273 at both ends of the outer ring gas main passage 270 are provided, respectively. The first outer ring gas branch passage 271 and the second outer ring gas branch passage 272 are provided in the shape of circular arcs extending to both sides with the outer ring connecting portion 273 as the center, and in this embodiment, the first and second outer ring gas branch passages are defined to be 1/4 circular arcs, respectively. And outer ring shunting gas outlets are respectively arranged at the end parts of the first and second outer ring gas branch channels.
Example two
The present embodiment provides a semiconductor product processing method, including the steps of:
providing a gas diffuser according to the present invention;
the etching gas is shunted to the gas diffuser through the diverter, and the gas diffuser uniformly diffuses the etching gas to the surface of the wafer to etch the wafer;
the splitter splits the etching gas into a central gas diffusion area and an edge gas diffusion area of the gas diffuser respectively, and a central split gas inlet of the central gas diffusion area uniformly disperses the etching gas to a central area of the surface of the wafer through a central split gas outlet; and the etching gas is uniformly dispersed to the edge area of the surface of the wafer through the edge shunting gas outlet by the central shunting gas inlet of the edge gas diffusion area.
Referring to FIG. 6, and with continued reference to FIG. 5, the method of the present embodiment will be described in detail by taking the gas diffuser 16 provided in the first embodiment as an example. The etching gas enters the flow divider 12 through the gas pipe 11, and then the flow divider 12 divides the etching gas to the gas diffuser 16. Specifically, the flow splitter 12 splits the etching gas to a center gas distribution region 13 at the center 3 of the gas diffuser 16, and an edge gas distribution region 14 at the edge 4 of the gas diffuser 16. Further, the flow splitter 12 may also split the etching gas to the edge-most gas diffusion region 15 of the gas diffuser 16.
The etching gas that enters the central gas diffusion region 13 enters the inner ring gas guide 26 from the central split gas inlet 17, and then is guided by the inner ring gas main passage 260 to the first inner ring branch passage 261 and the second inner ring branch passage 262 simultaneously via the inner ring connecting portion 263. Then, the etching gas reaches the central flow-dividing gas outlets at the ends of the first and second inner branch channels at the same distance and is sprayed to the central area of the surface of the wafer W corresponding to the central gas diffusion area.
Similarly, the etching gas simultaneously entering the edge gas diffusion region 14 enters the outer ring gas guide portion 27 through the edge branch gas inlet 18, and then is guided by the outer ring gas main passage 270 to the first outer ring branch passage 271 and the second outer ring branch passage 272 simultaneously through the outer ring connecting portion 273. Then, the etching gas reaches the edge diversion gas outlets at the ends of the first and second outer ring branch channels at the same distance and is sprayed to the edge area of the surface of the wafer W corresponding to the edge gas diffusion area.
According to the method of the embodiment, the etching gas reaching the surface of the wafer is uniform, and etching defects, such as under-etching or over-etching, caused by non-uniformity of the etching gas on the surface of the wafer do not occur.
In a further embodiment of this embodiment, the gas diffuser 16 further comprises an edge-most gas diffusion region 15 located outside the outer diffusion spacer 22, the edge-most gas diffusion region 15 comprising an edge-most flow-splitting gas inlet 19 and a plurality of edge-most flow-splitting gas outlets 25. The flow splitter 12 is capable of simultaneously splitting the etching gas to the edge-most gas diffusion region 15 at the edge-most 5 of the gas diffuser 16, and the edge-most split gas inlets 19 located at the edge-most gas diffusion region 15 direct the etching gas to the edge-most split gas outlets 25 in an equidistant manner, respectively.
As described above, the gas diffuser and the semiconductor processing method provided in the above embodiments have the following effects:
1. gas diffuser's central gas diffusion district, marginal gas diffusion district and marginal diffusion district all include reposition of redundant personnel gas inlet and export, still including the gaseous guide portion of intercommunication reposition of redundant personnel gas inlet and export, etching gas follows reposition of redundant personnel gas inlet warp the guide of gaseous guide portion to gas outlet, because gas outlet equals apart from the distance of reposition of redundant personnel gas inlet, consequently the velocity of flow and the flow through every gas outlet are the same, have improved the homogeneity that gas sprays.
2. When the gas diffuser is used for etching the wafer, the etching gas can be sprayed on the surface of the wafer more uniformly. Therefore, the wire diameter of the surface of the wafer is more uniform, and the yield of products is improved. Further, the economic loss caused by low product yield can be reduced.
The foregoing embodiments are merely illustrative of the principles of this invention and its efficacy, rather than limiting it, and various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, which is defined in the appended claims.
Claims (12)
1. A gas diffuser, comprising:
the inner side of the inner ring diffusion isolating ring comprises a central gas diffusion area, and the central gas diffusion area comprises at least one central flow-splitting gas inlet and a plurality of central flow-splitting gas outlets;
the outer ring diffusion isolation ring is positioned on the outer side of the inner ring diffusion isolation ring, the part between the inner ring diffusion isolation ring and the outer ring diffusion isolation ring comprises an edge gas diffusion area, and the edge gas diffusion area comprises at least one edge shunt gas inlet and a plurality of edge shunt gas outlets;
a gas guide including at least one inner ring gas guide located at the central gas diffusion region and at least one outer ring gas guide located at the edge gas diffusion region, wherein each of the inner ring gas guides the gas flowing in from the central split gas inlet port to the plurality of central split gas outlets at the same distance, and each of the outer ring gas guides the gas flowing in from the edge split gas inlet port to the plurality of edge split gas outlets at the same distance.
2. The gas diffuser of claim 1 further comprising a most marginal gas diffusion region outboard of said outer ring diffusion spacer ring, said most marginal gas diffusion region comprising a most marginal flow-splitting gas inlet and a plurality of most marginal flow-splitting gas outlets.
3. The gas diffuser of claim 1, wherein each of the inner ring gas guides includes an inner ring gas main passage and first and second inner ring branch passages at both ends of the inner ring gas main passage and respectively communicating with the inner ring gas main passage at a middle portion through an inner ring connecting portion;
the central shunting gas inlet is positioned in the middle part of the inner ring gas main channel, and the end parts of the first inner ring branch channel and the second inner ring branch channel are respectively communicated with the central shunting gas outlet.
4. The gas diffuser of claim 1, wherein each of the outer ring gas guides includes an outer ring gas main passage and first and second outer ring branch passages at both ends of the outer ring gas main passage and respectively communicating with the outer ring gas main passage at a middle portion through an outer ring connecting portion;
the edge shunting gas inlet is positioned in the middle of the outer ring gas main channel, and the end parts of the first outer ring branch channel and the second outer ring branch channel are respectively communicated with the edge shunting gas outlet.
5. The gas diffuser of claim 3 wherein said inner ring gas main passage, said first inner ring gas branch passage and said second inner ring gas branch passage comprise a circular arc configuration.
6. The gas diffuser of claim 4 wherein said outer ring gas main passage, said first outer ring gas branch passage and said second outer ring gas branch passage comprise a circular arc configuration.
7. A method of processing semiconductor products, comprising the steps of:
providing a gas diffuser according to claim 1;
the etching gas is shunted to the gas diffuser through the diverter, and the gas diffuser uniformly diffuses the etching gas to the surface of the wafer to etch the wafer;
the splitter splits the etching gas into a central gas diffusion area and an edge gas diffusion area of the gas diffuser respectively, and a central split gas inlet of the central gas diffusion area uniformly disperses the etching gas to a central area of the surface of the wafer through a central split gas outlet; and the etching gas is uniformly dispersed to the edge area of the surface of the wafer through the edge shunting gas outlet by the central shunting gas inlet of the edge gas diffusion area.
8. The process of claim 7, wherein the gas diffuser further comprises an edge-most gas diffusion region comprising an edge-most flow-splitting gas inlet and a plurality of edge-most flow-splitting gas outlets, the flow splitter splitting the etching gas into the edge-most gas diffusion region, the edge-most flow-splitting gas inlet uniformly dispersing the etching gas through the edge-most flow-splitting gas outlets to an edge-most region of the wafer surface.
9. The process of claim 7, wherein each of the inner ring gas guides includes an inner ring gas main passage and first and second inner ring branch passages at both ends of the inner ring gas main passage and communicating with the inner ring gas main passage through an inner ring connecting portion at a middle portion, respectively;
the central shunting gas inlet is positioned in the middle part of the inner ring gas main channel, and the end parts of the first inner ring branch channel and the second inner ring branch channel are respectively communicated with the central shunting gas outlet.
10. The process method according to claim 7, wherein each of the outer ring gas guides includes an outer ring gas main passage and first and second outer ring branch passages which are located at both ends of the outer ring gas main passage and communicate with the outer ring gas main passage through an outer ring connecting portion at a middle portion, respectively;
the edge shunting gas inlet is positioned in the middle of the outer ring gas main channel, and the end parts of the first outer ring branch channel and the second outer ring branch channel are respectively communicated with the edge shunting gas outlet.
11. The process of claim 9, wherein said inner ring gas main passage, said first inner ring gas branch passage and said second inner ring gas branch passage comprise a circular arc configuration.
12. The process of claim 10, wherein the outer ring gas main passage, the first outer ring gas branch passage, and the second outer ring gas branch passage comprise a circular arc configuration.
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| CN201811330938.4A CN111180308A (en) | 2018-11-09 | 2018-11-09 | Gas diffuser and method for processing semiconductor product |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117612977A (en) * | 2024-01-23 | 2024-02-27 | 上海邦芯半导体科技有限公司 | Air inlet device and air inlet method |
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- 2018-11-09 CN CN201811330938.4A patent/CN111180308A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117612977A (en) * | 2024-01-23 | 2024-02-27 | 上海邦芯半导体科技有限公司 | Air inlet device and air inlet method |
| CN117612977B (en) * | 2024-01-23 | 2024-04-05 | 上海邦芯半导体科技有限公司 | Air inlet device and air inlet method |
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