CN115110064A - Gas input equipment and gas input method - Google Patents
Gas input equipment and gas input method Download PDFInfo
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- CN115110064A CN115110064A CN202210836384.5A CN202210836384A CN115110064A CN 115110064 A CN115110064 A CN 115110064A CN 202210836384 A CN202210836384 A CN 202210836384A CN 115110064 A CN115110064 A CN 115110064A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract
The application discloses a gas input device and a gas input method. Wherein, gaseous input device includes: the reaction chamber is provided with a bearing table at the bottom; the bearing table is used for placing a substrate; the top spraying plate is arranged on the top surface of the reaction cavity; the top spraying plate is parallel to the substrate, and the centers of the top spraying plate and the substrate are aligned; the top spraying plate is used for flowing reaction gas into the reaction cavity along the direction vertical to the upper surface of the substrate; the side spraying device is arranged on the side surface of the reaction cavity; and the side spraying device is used for flowing reaction gas into the reaction cavity along the direction which vertically faces to the central axis of the bearing platform. The gas input equipment can improve the distribution of reaction gas on the surface of the substrate, improve the uniformity of the film thickness of the substrate and improve the yield of the substrate.
Description
Technical Field
The present disclosure relates to the field of integrated circuit manufacturing technologies, and in particular, to a gas input device and a gas input method.
Background
At present, in the semiconductor manufacturing industry, a thin film is an important component of a chip, and a PECVD (Plasma Enhanced chemical Vapor Deposition) occupies a large proportion in a thin film process. With the trend of smaller chip sizes, uniformity of thin films is becoming more and more important. For PECVD processes, the film is formed by a chemical reaction of a reactive gas at the wafer surface.
In the related technology, in the process of carrying out surface deposition on a wafer by a PECVD process, mixed gas enters a reaction cavity through a top spray plate distributed with a porous structure, and is diffused to the surface of the wafer to carry out chemical reaction, so that a required film is deposited on the wafer. In the process, the mixed gas in the reaction cavity is difficult to be uniform, and the film on the surface of the wafer is easy to have uneven thickness, so that the uniformity of the film thickness of the wafer is reduced, and the yield of the wafer is reduced.
Disclosure of Invention
The embodiment of the disclosure provides a gas input device and a gas input method, when a thin film is formed on a substrate, a side spraying device is additionally arranged in a reaction cavity, so that the distribution of reaction gas on the surface of the substrate can be improved, the uniformity of the thickness of the thin film of the substrate is improved, and the yield of the substrate can be improved.
In a first aspect, the present disclosure provides a gas input device comprising:
the reaction chamber is provided with a bearing table at the bottom; the bearing table is used for placing a substrate;
the top spraying plate is arranged on the top surface of the reaction cavity; the top spraying plate is parallel to the substrate, and the centers of the top spraying plate and the substrate are aligned; the top spraying plate is used for flowing reaction gas into the reaction cavity along the direction vertical to the upper surface of the substrate;
the side spraying device is arranged on the side surface of the reaction cavity; and the side spraying device is used for flowing reaction gas into the reaction cavity along the direction which vertically faces to the central axis of the bearing platform.
This embodiment provides a gas input device comprising: the reaction chamber is provided with a bearing table at the bottom; the bearing table is used for placing a substrate; the top spraying plate is arranged on the top surface of the reaction cavity; the top spraying plate is parallel to the substrate, and the centers of the top spraying plate and the substrate are aligned; the top spraying plate is used for flowing reaction gas into the reaction cavity along the direction vertical to the upper surface of the substrate; the side spraying device is arranged on the side surface of the reaction cavity; and the side spraying device is used for flowing reaction gas into the reaction cavity along the direction which vertically faces to the central axis of the bearing platform. When the gas input equipment forms a thin film on a substrate, the side spraying device is additionally arranged in the reaction cavity, reaction gas can flow into the reaction cavity from the upper side and the side surface of the substrate together by utilizing the top spraying plate arranged on the top surface of the reaction cavity and the side spraying device arranged on the side surface of the reaction cavity, so that the distribution of the reaction gas on the surface of the substrate is improved, the uniformity of the thickness of the thin film of the substrate is improved, and the yield of the substrate can be improved.
In an alternative embodiment, the side shower includes a plurality of shower plate units; the plurality of spray plate units are uniformly distributed in the circumferential direction around the central axis of the bearing table.
Above-mentioned gas input equipment, lateral part spray set includes a plurality of shower plate units, just a plurality of shower plate units are in the circumferencial direction evenly distributed around the axis of plummer. This gas input equipment includes a plurality of shower plate units, just a plurality of shower plate units are in centering on the circumferencial direction evenly distributed of the axis of plummer conveniently carries out the independent control to single shower plate unit, can flow into reactant gas to the reaction cavity from the side of base plate more high-efficiently, improves reactant gas more effectively and at the distribution on base plate surface, promotes the film thickness's of base plate homogeneity, can improve the yield of base plate.
In an alternative embodiment, each of the spraying plate units is provided with a plurality of first air holes which are opened towards the central axis of the bearing platform; the first air holes in each spray plate unit are uniformly distributed in the circumferential direction around the central axis of the bearing table.
In an alternative embodiment, the diameter of the first air hole is 0.1mm to 1 cm.
In an alternative embodiment, the first air holes are distributed in an array on each of the nozzle plate units.
In an alternative embodiment, the density of the first air holes on each of the nozzle plate units is not identical.
In the gas input device, the density of the first gas holes on each of the nozzle plate units is not completely the same. The first air holes in the spray plate units in the gas input equipment are not identical in density, so that the gas flow in different areas can be controlled in a targeted mode, the reaction gas can flow into the reaction cavity from the side face of the substrate more efficiently, the distribution of the reaction gas on the surface of the substrate is improved effectively, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In an alternative embodiment, the gas input device further comprises a gas supply system; and the gas supply system is used for controlling the top spraying plate and the side spraying device to flow reaction gas into the reaction cavity.
In an alternative embodiment, the air supply system comprises a first air supply system and a second air supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; and the second gas supply system is used for controlling the side spraying device to flow reaction gas into the reaction cavity.
The gas supply system comprises a first gas supply system and a second gas supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; the second gas supply system is used for controlling the lateral spraying device to flow reaction gas into the reaction cavity, so that the top spraying plate and the lateral spraying device are efficiently and accurately controlled, the reaction gas flows into the reaction cavity from the side face of the substrate more efficiently, the distribution of the reaction gas on the surface of the substrate is effectively improved, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In an alternative embodiment, the second air supply system comprises a plurality of side air supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; and the side gas supply subsystem is used for controlling the corresponding spraying plate units to flow reaction gas into the reaction cavity along the direction which vertically faces to the central axis of the bearing table.
The gas input apparatus described above, wherein said second gas supply system comprises a plurality of side gas supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; the lateral gas supply subsystem is used for controlling the corresponding spraying plate unit to flow in reaction gas into the reaction cavity along the direction perpendicular to the central axis of the bearing table, so that the spraying plate unit of the gas input equipment can be controlled more finely, the accurate control of the top spraying plate and the lateral spraying device can be improved, the reaction gas flows in the reaction cavity from the side surface of the substrate more efficiently, the distribution of the reaction gas on the surface of the substrate is further effectively improved, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In an alternative embodiment, the gas supply system further comprises a heating device; the heating device is used for heating the reaction gas before the reaction gas flows into the reaction cavity.
In an alternative embodiment, the carrier stage is also used for heating the substrate.
In an alternative embodiment, the material of the side shower is one of the following materials: aluminum, iron, aluminum oxide, aluminum nitride.
In a second aspect, the present disclosure provides a method of gas input, the method comprising:
reaction gas flows into the reaction cavity along the direction which is vertically towards the central axis of the bearing table through a side spraying device of the gas input equipment; the gas input equipment comprises the reaction cavity, a top spraying plate and the side spraying device; the bearing table is arranged at the bottom of the reaction cavity; the bearing table is used for placing a substrate; the side spraying device is arranged on the side surface of the reaction cavity; the top spraying plate is arranged on the top surface of the reaction cavity; the top spraying plate is parallel to the substrate, and the centers of the top spraying plate and the substrate are aligned;
and flowing reaction gas into the reaction cavity along the direction vertical to the upper surface of the substrate through the top spraying plate.
In an alternative embodiment, the side shower includes a plurality of shower plate units; the plurality of spray plate units are uniformly distributed in the circumferential direction around the central axis of the bearing table.
In an alternative embodiment, the gas input device further comprises a gas supply system; and the gas supply system is used for controlling the top spraying plate and the side spraying device to flow reaction gas into the reaction cavity.
In an alternative embodiment, the air supply system comprises a first air supply system and a second air supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; and the second gas supply system is used for controlling the side spraying device to flow reaction gas into the reaction cavity.
In an alternative embodiment, the flowing of the reaction gas into the reaction chamber through the side spraying device of the gas input device along a direction perpendicular to the central axis of the susceptor comprises:
the side spraying device is controlled by the second gas supply system, and reaction gas with second concentration flows into the reaction cavity along the direction which is vertical to the central axis of the bearing platform;
through the top shower plate, along the direction of perpendicular orientation the base plate upper surface, to reaction cavity inflow reaction gas includes:
and the top spraying plate is controlled by the first gas supply system, and the reaction gas with the first concentration flows into the reaction cavity along the direction vertical to the upper surface of the substrate.
In an alternative embodiment, the second air supply system comprises a plurality of side air supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; the side gas supply subsystem is used for controlling the corresponding spray plate units to flow reaction gases with incompletely identical characteristic parameters into the reaction cavity along the direction which vertically faces to the central axis of the bearing table; the characteristic parameters include gas flow, and/or flow rate, and/or concentration.
In an alternative embodiment, the gas supply system further comprises a heating device; the method further comprises the following steps: heating the reaction gas by the heating device before flowing the reaction gas into the reaction cavity.
The technical effect brought by any implementation manner of the second aspect may be referred to the technical effect brought by the implementation manner of the first aspect, and is not described herein again.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic side view of the structure of a gas delivery device provided by an embodiment of the present disclosure;
FIG. 2 is a schematic top view of a reaction chamber of the gas delivery apparatus of FIG. 1 in an embodiment of the disclosure;
FIG. 3 is a schematic top view of a reaction chamber of another gas delivery apparatus provided in an embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating a gas input apparatus provided in accordance with an embodiment of the present disclosure in which the density of gas holes in the nozzle plate units is not exactly the same;
FIG. 5 is a schematic flow chart of a gas input method according to an embodiment of the present disclosure;
FIG. 6 is a schematic flow chart of another gas input method provided by the embodiments of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be described in further detail with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the disclosed embodiments, the word "exemplary" is used to mean "serving as an example, embodiment, or illustration. Any embodiment described as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
The terms "first" and "second" are used herein for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature, and in the description of embodiments of the disclosure, unless stated otherwise, "plurality" means two or more.
Some terms in the embodiments of the present disclosure are explained below to facilitate understanding by those skilled in the art.
At present, in the semiconductor manufacturing industry, a thin film is an important component of a chip, and a PECVD (Plasma Enhanced chemical Vapor Deposition) occupies a large proportion in a thin film process. With the trend of smaller chip sizes, uniformity of thin films is becoming more and more important. For PECVD processes, the film is formed by a chemical reaction of a reactive gas at the wafer surface.
In the related technology, in the process of carrying out surface deposition on a wafer by a PECVD process, mixed gas enters a reaction cavity through a top spray plate distributed with a porous structure, and is diffused to the surface of the wafer to carry out chemical reaction, so that a required film is deposited on the wafer. In the process, the mixed gas in the reaction cavity is difficult to be uniform, so that the thickness of the film on the surface of the wafer is uneven, the uniformity of the thickness of the film of the wafer is reduced, and the yield of the wafer is reduced.
The present disclosure provides a gas input apparatus and a gas input method, which solve the problems of the related art that the thickness of a thin film on the surface of a wafer is easily uneven, and the uniformity of the thickness of the thin film of the wafer and the wafer yield are low in a thin film process in the semiconductor manufacturing industry. Wherein, gaseous input device includes: the reaction chamber is provided with a bearing platform at the bottom; the bearing table is used for placing a substrate; the top spraying plate is arranged on the top surface of the reaction cavity; the top spraying plate is parallel to the substrate, and the centers of the top spraying plate and the substrate are aligned; the top spraying plate is used for flowing reaction gas into the reaction cavity along the direction vertical to the upper surface of the substrate; the side spraying device is arranged on the side surface of the reaction cavity; the side spraying device is used for flowing reaction gas into the reaction cavity along the direction vertical to the central axis of the bearing table. This gas input equipment, when forming the film to the base plate, at the inside lateral part spray set that adds of reaction cavity, can utilize simultaneously to set up in the top spray plate of reaction cavity's top surface and set up in the lateral part spray set of reaction cavity's side, can follow the top of base plate and side and flow into reaction cavity jointly to reaction gas, improve reaction gas at the distribution on base plate surface, promote the film thickness's of base plate homogeneity, can improve the yield of base plate.
In order to further explain the technical solution provided by the embodiments of the present disclosure, the following further explains the gas input device provided by the embodiments of the present disclosure. The substrate in the embodiment of the present application may be a wafer.
Fig. 1 shows a schematic top view of the structure of a gas input device provided by an embodiment of the present disclosure. The gas input device 100, as shown in FIG. 1, includes:
the reaction chamber 10, the bottom of the reaction chamber 10 has bearing platforms 11; the susceptor 11 is used for placing a substrate 12;
the top spray plate 20, the top spray plate 20 is arranged on the top surface of the reaction cavity 10; the top shower plate 20 is parallel to the substrate 12 and is centrally aligned; the top shower plate 20 is used for flowing reaction gas into the reaction chamber 10 along a direction vertically facing the upper surface of the substrate 12;
the side spraying device 30, the side spraying device 30 is arranged on the side surface of the reaction cavity 10; the side shower unit 30 is used for flowing the reaction gas into the reaction chamber 10 along a direction perpendicular to the central axis 13 of the susceptor.
In some embodiments of the present application, the chamber 10 may be a cavity enclosed by a bottom plate, a side plate and a cover plate. The bottom plate and the side plate may be integrated or independent, and the present application is not limited specifically. The side of the reaction chamber 10 is the inner side of the side plate forming the chamber 10.
To more clearly illustrate the structure of the gas delivery device 100 shown in fig. 1, fig. 2 shows a schematic top view of the reaction chamber of the gas delivery device 100 shown in fig. 1. As shown in fig. 2, in the gas input apparatus 100, the side shower device 30 is disposed at a side surface of the reaction chamber 10; the side shower unit 30 is used for flowing the reaction gas into the reaction chamber 10 along a direction perpendicular to the central axis of the susceptor. In fig. 2, the direction is perpendicular to the central axis of the susceptor, i.e., the direction from the edge of the substrate 12 to the center of the substrate 12.
This embodiment provides a gas input device 100 comprising: the reaction chamber 10, the bottom of the reaction chamber 10 has bearing platforms 11; the susceptor 11 is used for placing a substrate 12; the top spray plate 20, the top spray plate 20 is arranged on the top surface of the reaction cavity 10; the top shower plate 20 is parallel to the substrate 12 and is centrally aligned; the top shower plate 20 is used for flowing reaction gas into the reaction chamber 10 along a direction vertically facing the upper surface of the substrate 12; the side spraying device 30, the side spraying device 30 is arranged on the side surface of the reaction cavity 10; the side shower unit 30 is used for flowing the reaction gas into the reaction chamber 10 along a direction perpendicular to the central axis 13 of the susceptor. This gas input equipment, when forming the film to the base plate, at the inside lateral part spray set that adds of reaction cavity, can utilize simultaneously to set up in the top spray plate of reaction cavity's top surface and set up in the lateral part spray set of reaction cavity's side, can follow the top and the side of base plate and flow into reactant gas to reaction cavity jointly, promote the density degree of consistency of reactant gas among the mist that lets in the cavity, improve reactant gas's distribution on the base plate surface, promote the film thickness's of base plate homogeneity, can improve the yield of base plate.
In the embodiment of the application, the side spraying device can be divided into a plurality of areas, and the purpose of improving the uniformity of the deposited film is achieved by controlling the flow of gas reserved in different areas.
In an alternative embodiment, the side spray device comprises a plurality of spray plate units; the plurality of spray plate units are uniformly distributed in the circumferential direction around the central axis of the bearing table.
During the specific implementation, gas input equipment can include a plurality of shower plate units, just a plurality of shower plate units are in centering on the circumferencial direction evenly distributed of the axis of plummer conveniently carries out the independent control to single shower plate unit, can promote the film thickness's of base plate homogeneity more effectively.
Illustratively, as shown in fig. 3, the side shower device 30 includes a plurality of shower plate units 31; the plurality of shower plate units 31 are uniformly distributed in the circumferential direction around the central axis of the susceptor. The central axis of the susceptor is a straight line perpendicular to the substrate 12 in fig. 3 and passing through the center of the substrate 12.
According to the gas input equipment provided by the embodiment, a set of side spraying device is additionally arranged on the side of the inner part of the reaction cavity, and the side spraying device comprises a plurality of spraying plate units; the plurality of spraying plate units are uniformly distributed in the circumferential direction around the central axis of the bearing table, reaction gas can flow inwards from the edge of the wafer, and the gas flow rate can be changed aiming at different positions of the wafer, so that the film is controlled. The equipment not only can spray plate flow gas from the top, but also can enable reaction gas to uniformly flow to the wafer from the side, can reduce the condition that the uniformity of a film is poor due to uneven gas distribution caused by single top spraying plate flow gas, improves the uniformity of the thickness of the film of the substrate, can improve the yield of the substrate, and can effectively improve the uniformity of a coated film particularly under the size of a large-area wafer.
In a possible implementation manner, each spray plate unit is provided with a plurality of first air holes with openings facing to the central axis of the bearing platform; the first air holes on each spray plate unit are uniformly distributed in the circumferential direction around the central axis of the bearing platform.
Illustratively, as shown in fig. 3, each nozzle plate unit 31 is provided with a plurality of air holes 32 opening toward the central axis of the carrier table; the air holes 30 on each spray plate unit 31 are evenly distributed in the circumferential direction around the central axis of the carrier table.
In practice, the density of the first air holes on each spray plate unit can be set to be the same. When the density of the first air holes on each spray plate unit is the same, the reaction gas can flow into the reaction cavity in the circumferential direction around the central axis of the bearing table more uniformly, and the uniformity of the film thickness of the substrate can be better.
In the above embodiment, each of the nozzle plate units is provided with a plurality of first air holes with openings facing the central axis of the bearing platform; the first air holes in each spray plate unit are uniformly distributed in the circumferential direction around the central axis of the bearing platform, so that the reaction gas can uniformly flow into the reaction cavity in the circumferential direction around the central axis of the bearing platform through any spray plate unit, the density uniformity of the reaction gas in the mixed gas introduced into the cavity is further improved, the distribution of the reaction gas on the surface of the substrate is improved, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In an alternative embodiment, the diameter of the first air hole is 0.1mm to 1 cm.
During specific implementation, the diameters of the holes for introducing gas into the reaction cavity are different from 0.1mm to 1cm, and the holes are uniformly distributed on the surface of the side spraying device. In some embodiments, the gas input devices may be equipped with different pore sizes and distributions, depending on the reaction process.
Illustratively, the diameter D1 of the air hole 32 in FIG. 3 is 0.1mm to 1cm, for example, the diameter D1 of the air hole 32 may be 0.1mm, 0.3mm, 0.5mm, 0.7mm, 0.8mm, 0.1cm, 0.3cm, 0.5cm, 0.7cm, 1 cm.
In an alternative embodiment, the first air holes on the same nozzle plate unit have the same diameter; the diameters of the first air holes on the respective nozzle plate units are not exactly the same.
In an alternative embodiment, the top shower plate is provided with a plurality of second air holes with openings vertically facing the upper surface of the substrate; the second air holes are uniformly distributed on the top spraying plate.
In an embodiment of the present application, a value range of the diameter of the second air hole may be the same as a value range of the diameter of the first air hole.
In an alternative embodiment, the diameter of the second air hole is 0.1mm to 1 cm.
Illustratively, the diameter D2 of the second air holes on the top shower plate 20 is 0.1mm to 1cm, for example, the diameter D2 may be 0.1mm, 0.3mm, 0.5mm, 0.7mm, 0.8mm, 0.1cm, 0.3cm, 0.5cm, 0.7cm, 1 cm.
In an alternative embodiment, the diameter of the second air hole is different from the diameter of the first air hole.
During specific implementation, the diameter of the first air hole in the spraying plate unit can be smaller than the diameter of the second air hole in the top spraying plate, for example, the diameter of the second air hole is 25% -75% of the diameter of the first air hole, so that the density uniformity of the reaction gas in the mixed gas introduced into the cavity can be further improved, the distribution of the reaction gas on the surface of the substrate is improved, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In an alternative embodiment, the first gas orifices are distributed in an array on each jet plate unit.
For example, the air holes 32 may be distributed in an array on each nozzle plate unit 31, for example, the air holes 32 on each nozzle plate unit 31 may be distributed in a 3 × 5 array, that is, the air holes 32 on each nozzle plate unit 31 are 3 rows and 5 columns.
It is understood that the first air holes on different nozzle plate units may have different array distributions, and the application does not specifically limit the number of rows and columns of the array distribution of the first air holes on the nozzle plate units.
In an alternative embodiment, the density of the first air holes on each nozzle plate unit is not exactly the same.
Illustratively, as shown in fig. 4, the density of the air holes 32 on each of the nozzle plate units 31 is not exactly the same. The density of the air holes on the nozzle plate unit facing the mark thin is high, and the density of the air holes on the nozzle plate unit facing the mark thick is low.
When the method is specifically implemented, the newly-added side spraying device is divided into a plurality of areas, and the purpose of influencing the uniformity of the deposited film is achieved by controlling the flow of gas flowing out of different areas. The equipment can change the phenomenon that the whole outer ring of the film is thin and the center is thick, and can control the gas flow and the flow velocity of different areas according to different profile profiles of the film, so that the uniformity is improved. Specifically, for the area with large film thickness on the substrate, for example, for the area marked with thick shown in fig. 4, a smaller density of air holes can be set, and the gas flow and flow rate can be reduced; for the area with small film thickness on the substrate, for example, for the area with the mark thin shown in fig. 4, a larger density of the gas holes can be set to increase the gas flow rate and flow velocity. In addition, through the control of the flow velocity, the problem of poor film uniformity caused by gas flow velocity difference can be solved, and the uniformity of the film thickness is improved.
In the gas inlet device of this embodiment, the density of the first gas holes in each of the nozzle plate units is not completely the same. The density of the first air holes in each spray plate unit in the gas input equipment is not completely the same, so that the gas flow in different areas can be controlled pertinently, the reaction gas can flow into the reaction cavity from the side surface of the substrate more efficiently, the distribution of the reaction gas on the surface of the substrate is improved effectively, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In one possible implementation, the gas input device further comprises a gas supply system; the gas supply system is used for controlling the top spraying plate and the side spraying device to flow reaction gas into the reaction cavity.
Illustratively, referring to fig. 1, the gas input device 100 further includes a gas supply system 14; the gas supply system 14 is used to control the flow of the reaction gas into the reaction chamber by the top shower plate 20 and the side shower device 30 so that a desired thin film is deposited on the substrate 12.
In some embodiments of the present application, the top spray plate and the side spray devices may be supplied with air through the same air supply system. In other embodiments of the present application, the top shower plate and the side shower device may be separately supplied with air through different air supply systems.
In an alternative embodiment, the air supply system comprises a first air supply system and a second air supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; the second gas supply system is used for controlling the side spraying device to flow reaction gas into the reaction cavity.
In specific implementation, the gas supply system comprises a first gas supply system and a second gas supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; the second gas supply system is used for controlling the lateral spraying device to flow reaction gas into the reaction cavity, and can change the gas flow rate aiming at different positions of the wafer, so that the film is controlled.
Illustratively, the air supply system 14 may include an air supply system 14a and an air supply system 14 b; the gas supply system 14a is used for controlling the top spray plate 20 to flow reaction gas into the reaction cavity 10; the gas supply system 14b is used for controlling the side spray device to flow the reaction gas into the reaction chamber 10.
The gas input apparatus of this embodiment, the gas supply system includes a first gas supply system and a second gas supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; the second gas supply system is used for controlling the lateral spraying device to flow in reaction gas into the reaction cavity, so that the top spraying plate and the lateral spraying device are efficiently and accurately controlled, the reaction gas flows into the reaction cavity from the side surface of the substrate more efficiently, the distribution of the reaction gas on the surface of the substrate is effectively improved, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In an alternative embodiment, the second air supply system comprises a plurality of side air supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; the side gas supply subsystem is used for controlling the corresponding spray plate units to flow reaction gas into the reaction cavity along the direction which is vertically towards the central axis of the bearing table.
Illustratively, the air supply system 14b includes a plurality of side air supply subsystems 14b _ i; the side air supply subsystems 14b _ i correspond to the spray plate units 31 one by one; the side gas supply subsystem 14b _ i is used for controlling the corresponding shower plate unit 31 to flow the reaction gas into the reaction chamber 10 along the direction perpendicular to the central axis of the susceptor.
The gas input apparatus of this embodiment, the second gas supply system comprises a plurality of side gas supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; the lateral part air feed subsystem is used for controlling the direction of the corresponding spraying plate unit along the central axis of the vertical orientation bearing platform and flowing reaction gas into the reaction cavity, so that the spraying plate unit of the gas input equipment can be controlled more finely, the accurate control of the top spraying plate and the lateral part spraying device can be improved, the reaction gas flows into the reaction cavity from the side surface of the substrate more efficiently, the distribution of the reaction gas on the surface of the substrate is further effectively improved, the uniformity of the film thickness of the substrate is improved, and the yield of the substrate can be improved.
In the embodiment of this application, can let in inert gas when letting in reactant gas to change the reactant gas's in the mist concentration, flow into reaction chamber from the lateral part gas supply subsystem of difference, the uniformity of the film thickness of promotion base plate is promoted in the reactant gas's on control substrate surface distribution.
In an alternative embodiment, the gas supply system further comprises a heating device; the heating device is used for heating the reaction gas before the reaction gas flows into the reaction cavity.
Illustratively, as shown in fig. 1, the gas input device 100 may further include a heating device 15, and the heating device 15 is used for heating the reaction gas before flowing the reaction gas into the reaction chamber 10.
In the gas input device of the above embodiment, the gas supply system further includes a heating device; the heating device is used for heating the reaction gas before the reaction gas flows into the reaction cavity. This gas input equipment is provided with heating device, can be before flowing into reaction gas to reaction chamber, and heating reaction gas can further make the reaction gas misce bene in the reaction chamber, improves reaction gas in the distribution on substrate surface, promotes the film thickness's of base plate homogeneity, can improve the yield of base plate.
In an alternative embodiment, the carrier table is also used for heating the substrate.
The carrier table shown in fig. 1 may also be, for example, a heating plate for heating the substrate.
In an alternative embodiment, the material of the side shower is one of the following materials: aluminum, iron, aluminum oxide, aluminum nitride.
Illustratively, the material of the side shower 30 may be aluminum, iron, aluminum oxide, aluminum nitride.
In some other embodiments of the present application, the material of the side spray device may be other materials besides aluminum, iron, aluminum oxide, and aluminum nitride. The present application does not specifically limit the material of the side shower device.
Based on the same inventive concept as the gas input device shown in fig. 1, the embodiment of the present disclosure also provides a gas input method. Since the gas input method is a method corresponding to the gas input device of the present disclosure, and the principle of the method for solving the problem is similar to that of the gas input device, the implementation of the method can be referred to the implementation of the above embodiment of the gas input device, and repeated details are not repeated.
Embodiments of the present disclosure also provide a gas input method, as shown in fig. 5, the method includes the following steps:
step S501, reaction gas flows into the reaction cavity along the direction vertical to the central axis of the bearing table through a side spraying device of the gas input equipment.
The gas input equipment comprises a reaction cavity, a top spraying plate and a side spraying device; the bottom of the reaction cavity is provided with a bearing platform; the bearing table is used for placing a substrate; the side spraying device is arranged on the side surface of the reaction cavity; the top spray plate is arranged on the top surface of the reaction cavity; the top shower plate is parallel to the substrate and is centrally aligned.
Step S502, flowing a reaction gas into the reaction chamber through the top shower plate in a direction perpendicular to the upper surface of the substrate.
According to the gas input method, reaction gas flows into the reaction cavity along the direction vertical to the central axis of the bearing table through the side spraying device of the gas input equipment; through the top shower plate, along the direction of perpendicular orientation base plate upper surface, to reaction cavity inflow reaction gas, can follow the top and the side of base plate and flow into reaction gas to reaction cavity jointly, improve reaction gas in the distribution on base plate surface, promote the film thickness's of base plate homogeneity, can improve the yield of base plate.
In an alternative embodiment, the side spray device comprises a plurality of spray plate units; the plurality of spray plate units are uniformly distributed in the circumferential direction around the central axis of the bearing table.
In an alternative embodiment, each spray plate unit is provided with a plurality of first air holes which are opened towards the central axis of the bearing platform; the first air holes on each spray plate unit are uniformly distributed in the circumferential direction around the central axis of the bearing platform.
In an alternative embodiment, the diameter of the first air hole is 0.1mm to 1 cm.
In an alternative embodiment, the first gas holes are distributed in an array on each nozzle plate unit.
In the embodiment of this application, lateral part spray set can constitute by 2 and above a plurality of shower plate units, a plurality of shower plate unit evenly distributed are inboard at reaction cavity chamber, when carrying out the deposit film, reactant gas carries out the intensive mixing in getting into lateral part spray set via the pipeline, the aperture that back process lateral part spray set surface distributes gets into reaction cavity, again with reactant gas from top shower plate shower inflow base plate wafer top, when cleaning reaction cavity, be used for the input of this lateral part spray set also can be followed to clear gas, can clean the cavity more comprehensively.
In an alternative embodiment, the density of the first air holes on each nozzle plate unit is not exactly the same.
The method can improve the problems of 'thick center and thin edge' of the deposited film thickness distribution, and when the deposited film thickness distribution is not concentric, the device can adjust the reaction gas flow flowing out of the corresponding plate spraying unit according to the corresponding area of the wafer, and change the density of the reaction gas on the surface of the wafer, thereby realizing the improvement of the film profile.
In an alternative embodiment, the gas input device further comprises a gas supply system; the gas supply system is used for controlling the top spraying plate and the side spraying device to flow reaction gas into the reaction cavity.
In an alternative embodiment, the air supply system comprises a first air supply system and a second air supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; the second gas supply system is used for controlling the side spraying device to flow reaction gas into the reaction cavity.
In an alternative embodiment, the gas supply system further comprises a heating device; the method further comprises the following steps: the reaction gas is heated by a heating device before flowing into the reaction chamber.
In an alternative embodiment, the gas input process, as shown in fig. 6, can be further implemented by the following steps:
step S601, controlling the side spraying device through the second gas supply system, and flowing the reaction gas with the second concentration into the reaction chamber along a direction perpendicular to the central axis of the bearing table.
In an alternative embodiment, the second air supply system comprises a plurality of side air supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; the side gas supply subsystem is used for controlling the corresponding spray plate units to flow reaction gas with incompletely same characteristic parameters into the reaction cavity along the direction which vertically faces the central axis of the bearing platform; the characteristic parameters include gas flow, and/or flow rate, and/or concentration.
During specific implementation, in the reaction process of film deposition, the inert gas can be introduced while the reaction gas is introduced to change the concentration of the reaction gas in the mixed gas, the reaction gas flows into the reaction cavity from different spraying plate units, the distribution of the reaction gas on the surface of the wafer is controlled, and the profile of the film is improved.
Step S602, the top shower plate is controlled by the first gas supply system, and the reaction gas with the first concentration flows into the reaction chamber along a direction perpendicular to the upper surface of the substrate.
The method can improve the problem of 'thick center and thin edge' of the film, and when the thickness distribution of the deposited film is not concentric, the device can adjust the flow rate and flow velocity of the reaction gas flowing out of the corresponding plate spraying unit according to the corresponding area of the wafer, and change the density of the reaction gas on the surface of the wafer, thereby realizing the improvement of the film profile.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (19)
1. A gas input device, characterized in that the gas input device comprises:
the reaction chamber is provided with a bearing table at the bottom; the bearing table is used for placing a substrate;
the top spraying plate is arranged on the top surface of the reaction cavity; the top spray plate is parallel to the substrate, and the centers of the top spray plate and the substrate are aligned; the top spraying plate is used for flowing reaction gas into the reaction cavity along the direction vertical to the upper surface of the substrate;
the side spraying device is arranged on the side surface of the reaction cavity; and the side spraying device is used for flowing reaction gas into the reaction cavity along the direction which vertically faces to the central axis of the bearing platform.
2. The gas delivery apparatus of claim 1, wherein the side shower comprises a plurality of shower plate units; the plurality of spray plate units are uniformly distributed in the circumferential direction around the central axis of the bearing table.
3. The gas delivery device according to claim 2, wherein each of the nozzle plate units is provided with a plurality of first gas holes opened toward a central axis of the susceptor; the first air holes in each spray plate unit are uniformly distributed in the circumferential direction around the central axis of the bearing table.
4. A gas inlet device according to claim 3, characterised in that the first gas hole is circular.
5. The gas delivery device according to claim 3, wherein the first gas holes are distributed in an array on each of the nozzle plate units.
6. A gas inlet device according to claim 3, wherein the density of the first gas holes in each of the jet plate units is not identical.
7. The gas input apparatus of claim 2, further comprising a gas supply system; and the gas supply system is used for controlling the top spraying plate and the side spraying device to flow reaction gas into the reaction cavity.
8. The gas input apparatus of claim 7, wherein the gas supply system comprises a first gas supply system and a second gas supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; and the second gas supply system is used for controlling the side spraying device to flow reaction gas into the reaction cavity.
9. The gas input apparatus of claim 8, wherein the second gas supply system comprises a plurality of side gas supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; and the side gas supply subsystem is used for controlling the corresponding spraying plate units to flow reaction gas into the reaction cavity along the direction which vertically faces to the central axis of the bearing table.
10. The gas delivery apparatus of claim 7, wherein the gas supply system further comprises a heating device; the heating device is used for heating the reaction gas before the reaction gas flows into the reaction cavity.
11. The gas delivery device of any of claims 1-10, wherein the susceptor further is configured to heat the substrate.
12. A gas inlet device according to any of claims 1-10, characterized in that the material of the side shower is one of the following materials: aluminum, iron, aluminum oxide, aluminum nitride.
13. A method of gas input, the method comprising:
reaction gas flows into the reaction cavity along the direction which is vertically towards the central axis of the bearing table through a side spraying device of the gas input equipment; the gas input equipment comprises the reaction cavity, a top spraying plate and the side spraying device; the bearing table is arranged at the bottom of the reaction cavity; the bearing table is used for placing a substrate; the side spraying device is arranged on the side surface of the reaction cavity; the top spraying plate is arranged on the top surface of the reaction cavity; the top spraying plate is parallel to the substrate, and the centers of the top spraying plate and the substrate are aligned;
and flowing reaction gas into the reaction cavity along the direction vertical to the upper surface of the substrate through the top spraying plate.
14. The method of claim 13, wherein the side spray device comprises a plurality of jet plate units; the plurality of spray plate units are uniformly distributed in the circumferential direction around the central axis of the bearing table.
15. The method of claim 14, wherein the gas input device further comprises a gas supply system; and the gas supply system is used for controlling the top spraying plate and the side spraying device to flow reaction gas into the reaction cavity.
16. The method of claim 15, wherein the gas supply system comprises a first gas supply system and a second gas supply system; the first gas supply system is used for controlling the top spraying plate to flow reaction gas into the reaction cavity; and the second gas supply system is used for controlling the side spraying device to flow reaction gas into the reaction cavity.
17. The method of claim 16, wherein the flowing of the reaction gas into the reaction chamber through the side shower of the gas inlet device in a direction perpendicular to the central axis of the susceptor comprises:
the side spraying device is controlled by the second gas supply system, and reaction gas with second concentration flows into the reaction cavity along the direction which is vertical to the central axis of the bearing platform;
through the top shower plate, along the direction of perpendicular orientation the base plate upper surface, to reaction cavity inflow reaction gas includes:
and the top spraying plate is controlled by the first gas supply system, and the reaction gas with the first concentration flows into the reaction cavity along the direction vertical to the upper surface of the substrate.
18. The method of claim 16, wherein the second air supply system comprises a plurality of side air supply subsystems; the side air supply subsystems correspond to the spray plate units one by one; the side gas supply subsystem is used for controlling the corresponding spray plate units to flow reaction gases with incompletely identical characteristic parameters into the reaction cavity along the direction which vertically faces to the central axis of the bearing table; the characteristic parameters include gas flow, and/or flow rate, and/or concentration.
19. The method of claim 15, wherein the gas supply system further comprises a heating device; the method further comprises the following steps: heating the reaction gas by the heating device before flowing the reaction gas into the reaction cavity.
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| CN202210836384.5A CN115110064A (en) | 2022-07-15 | 2022-07-15 | Gas input equipment and gas input method |
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| CN202210836384.5A CN115110064A (en) | 2022-07-15 | 2022-07-15 | Gas input equipment and gas input method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115815087A (en) * | 2022-12-13 | 2023-03-21 | 拓荆科技股份有限公司 | Ultraviolet curing equipment |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1403627A (en) * | 2001-08-30 | 2003-03-19 | 周星工程股份有限公司 | High-density plasma chemical vapour-phase deposition equipment |
| CN101153387A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | High-density plasma deposition reaction chamber and air injection ring for reaction chamber |
| CN101824607A (en) * | 2010-05-12 | 2010-09-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas inlet device for CVD reactor |
| WO2010109915A1 (en) * | 2009-03-27 | 2010-09-30 | シャープ株式会社 | Vapor deposition apparatus and vapor deposition method |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102787302A (en) * | 2011-05-18 | 2012-11-21 | 中国科学院微电子研究所 | Gas uniformizing device for improving film preparation technology |
| CN106544646A (en) * | 2015-09-18 | 2017-03-29 | 沈阳拓荆科技有限公司 | A kind of atomic layer deposition apparatus |
| CN106811736A (en) * | 2016-12-27 | 2017-06-09 | 南昌大学 | A kind of chemical vapor deposition unit |
| CN209508404U (en) * | 2018-12-12 | 2019-10-18 | 捷苙科技股份有限公司 | Clad type heating device applied to Metalorganic chemical vapor deposition system |
| EP3599290A2 (en) * | 2018-07-24 | 2020-01-29 | Lg Electronics Inc. | Chemical vapor deposition equipment for solar cell and deposition method thereof |
| CN110894596A (en) * | 2018-09-13 | 2020-03-20 | 长鑫存储技术有限公司 | Film preparation equipment and reaction cavity thereof |
| CN114351117A (en) * | 2020-10-13 | 2022-04-15 | 东部超导科技（苏州）有限公司 | Spray plate, MOCVD reaction system with spray plate and use method of MOCVD reaction system |
| CN114388322A (en) * | 2020-10-19 | 2022-04-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and manufacturing method of gas spraying ring thereof |
-
2022
- 2022-07-15 CN CN202210836384.5A patent/CN115110064A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1403627A (en) * | 2001-08-30 | 2003-03-19 | 周星工程股份有限公司 | High-density plasma chemical vapour-phase deposition equipment |
| CN101153387A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | High-density plasma deposition reaction chamber and air injection ring for reaction chamber |
| WO2010109915A1 (en) * | 2009-03-27 | 2010-09-30 | シャープ株式会社 | Vapor deposition apparatus and vapor deposition method |
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN101824607A (en) * | 2010-05-12 | 2010-09-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas inlet device for CVD reactor |
| CN102787302A (en) * | 2011-05-18 | 2012-11-21 | 中国科学院微电子研究所 | Gas uniformizing device for improving film preparation technology |
| CN106544646A (en) * | 2015-09-18 | 2017-03-29 | 沈阳拓荆科技有限公司 | A kind of atomic layer deposition apparatus |
| CN106811736A (en) * | 2016-12-27 | 2017-06-09 | 南昌大学 | A kind of chemical vapor deposition unit |
| EP3599290A2 (en) * | 2018-07-24 | 2020-01-29 | Lg Electronics Inc. | Chemical vapor deposition equipment for solar cell and deposition method thereof |
| CN110894596A (en) * | 2018-09-13 | 2020-03-20 | 长鑫存储技术有限公司 | Film preparation equipment and reaction cavity thereof |
| CN209508404U (en) * | 2018-12-12 | 2019-10-18 | 捷苙科技股份有限公司 | Clad type heating device applied to Metalorganic chemical vapor deposition system |
| CN114351117A (en) * | 2020-10-13 | 2022-04-15 | 东部超导科技（苏州）有限公司 | Spray plate, MOCVD reaction system with spray plate and use method of MOCVD reaction system |
| CN114388322A (en) * | 2020-10-19 | 2022-04-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and manufacturing method of gas spraying ring thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115815087A (en) * | 2022-12-13 | 2023-03-21 | 拓荆科技股份有限公司 | Ultraviolet curing equipment |
| CN115815087B (en) * | 2022-12-13 | 2023-11-17 | 拓荆科技股份有限公司 | Ultraviolet curing equipment |
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