CN209508404U - Clad type heating device applied to Metalorganic chemical vapor deposition system - Google Patents
Clad type heating device applied to Metalorganic chemical vapor deposition system Download PDFInfo
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- CN209508404U CN209508404U CN201822084242.XU CN201822084242U CN209508404U CN 209508404 U CN209508404 U CN 209508404U CN 201822084242 U CN201822084242 U CN 201822084242U CN 209508404 U CN209508404 U CN 209508404U
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- reaction cavity
- heating device
- chemical vapor
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- metalorganic chemical
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Abstract
A kind of clad type heating device applied to Metalorganic chemical vapor deposition system, it include: reaction cavity, first heater, carrier and secondary heating mechanism, wherein, reaction cavity has upper end and bottom end, has gas input to allow gas source to be directed into reaction cavity in the side of reaction cavity；First heater is set to the upper end of reaction cavity, and needed first heat source when carrying out deposition reaction inside reaction cavity is provided by the upper end of reaction cavity；Carrier, to bearing substrate；And secondary heating mechanism, it is set to the bottom end of reaction cavity, Secondary Heat Source is provided towards carrier by bottom end, so that carrier absorbs Secondary Heat Source and the temperature of substrate is maintained second temperature, there is provided reaction cavity additional energy using first heater, substrate on carrier can remain within lower temperature to carry out thin film deposition process, to be lifted at the uniformity of the layers of material deposited on substrate.
Description
Technical field
The utility model is about a kind of technical field of semiconductors, especially with regard to applied to Metalorganic chemical vapor deposition
The clad type heating device of system.
Background technique
Metalorganic chemical vapor deposition (MOCVD) is a kind of typical gas phase deposition technology, this method comprises: by three races
The organo-metallic compound of (III group) vaporizes, and thermally decomposes three compounds of group of vaporization on the surface of a substrate, makes to decompose production
The gas reaction of object and five races (V group) is with deposition film on substrate.Because the thickness of film can be controlled using MOCVD
Degree and composition.And because the technology is very outstanding in terms of productivity, it is widely used as in semiconductor devices manufacture
Film growth techniques.
MOCVD reaction chamber used in MOCVD is equipped with chamber, and pedestal in the chamber is arranged and is transported to reaction gas
The pipeline of substrate surface.In MOCVD reaction chamber, by placing on the base and being heated to suitable temperature for substrate,
And film deposition is carried out and making organic metal gas flow to substrate surface via pipeline.In the process of film deposition
In, in order to keep the thickness of film of deposition uniform, it is desirable that reaction gas is along substrate surface uniform flow in MOCVD reactor
It is dynamic.In order to enable reaction gas is along substrate surface Uniform Flow in MOCVD reactor, there has been provided the side of pipelines
Formula.
However, in the prior art, it is desirable that improve the film deposition efficiency of MOCVD reactor.Pedestal is scaled up,
So that amplified pedestal can be with a large amount of substrates of primary heating and the growing film on the substrate of major diameter span, so that it is heavy to improve film
Product efficiency.However, scaled pedestal increases the distance between pedestal upstream end and downstream, to make reaction gas
The difference that condition (for example, concentration and temperature of reaction gas) is swum between end and downstream on the base is very big.Therefore, it also confirms that
Deposition film it is in uneven thickness, be based on the reason, up to the present can be realized simultaneously thickness equably still without method
Also the deposition efficiency of film is improved while deposition film.
Utility model content
According to defect disclosed in the prior art, the main purpose of the utility model is taken using clad type heating device
It for the heating device in traditional Metalorganic chemical vapor deposition system, provides reaction cavity additional energy, and is carrying
Substrate on disk can maintain lower temperature still to carry out thin film deposition process, be lifted at deposited on substrate it is each
The uniformity of layer material.
A further object of the utility model is that increasing another heating device in reaction cavity can improve in epitaxy
During, since gas concentration is uniformly distributed in horizontal reaction cavity, air-flow is Laminar Flow, caused fluid dynamic
Viscid effect can be transmitted since there are thermal energy in the upper end of reaction cavity and bottom end between substrate and carrier through air-flow
Thermal energy and the distribution that temperature gradient is presented does not have very so that the intracorporal thermal field of reaction chamber from top to bottom can be uniformly distributed
Big temperature stratification generates.
The another object of the utility model is, increase on reaction cavity another heating device can active by nothing
Product is imitated for example, being attached to the transiting product of reaction chamber body wall, the product that growth can not be contributed to or reaction process not
The tri-nitride of formation, which deposits, to be removed, to solve the clean technical problem of reaction chamber body wall.
A further object again of the utility model is that in reaction cavity, as heating temperature increases, reaction chamber is intracorporal
Temperature gradient is reduced and whole gas phase temperature uniformly increases, and the quantity for generating compound across energy barrier crash response increases, can be with
It is effective that material combination reaction is provided, improve quality of materials.
According to above-mentioned purpose, the utility model, which is provided, covers formula heating applied to the height of Metalorganic chemical vapor deposition system
Device, comprising: reaction cavity, first heater, carrier and secondary heating mechanism, wherein reaction cavity has upper end
And bottom end, and there is gas input in the side of reaction cavity, another side is closed end；First heater is set to
The upper end of reaction cavity, needed first heat when carrying out deposition reaction towards offer inside reaction cavity by the upper end of reaction cavity
Source, and control the first temperature inside reaction cavity；Carrier, to bearing substrate；And secondary heating mechanism, it is set to anti-
The bottom end for answering cavity provides Secondary Heat Source towards carrier by bottom end, so that carrier absorbs Secondary Heat Source and the temperature by substrate
In the environment of degree maintains second temperature, accordingly, provide reaction cavity additional energy using first heater, and carrying
Substrate on disk can maintain lower temperature still to carry out thin film deposition process, be lifted at deposited on substrate it is each
The uniformity of layer material.
Detailed description of the invention
Fig. 1 is the technology according to disclosed by the utility model, indicates to be applied to Metalorganic chemical vapor deposition system
The schematic diagram of clad type heating device.
Fig. 2 is the technology according to disclosed by the utility model, indicates to be applied to Metalorganic chemical vapor deposition system
The design cycle step schematic diagram of clad type heating device.
Specific embodiment
In order to make the purpose of this utility model, technical characteristic and advantage, can more correlative technology field personnel understood, and
It is carried out the utility model, cooperates appended schema herein, specifically illustrate the technical characteristics of the utility model and embodiment,
And enumerate preferred embodiment further explanation.It is related with the utility model feature to express with the schema hereinafter compareed
Signal does not also need completely to draw according to practical situation.And this field skill involved in the explanation of this case embodiment
Technology contents known to art personnel, are also no longer stated.
Metalorganic chemical vapor deposition (MOCVD) system (hereinafter referred to as MOCVD system) is light emitting diode, high frequency group
The main process apparatus of the important electronic building brick such as part, (PCC) power, required for wherein heating system provides processing procedure in reaction
Process temperatures and energy (also referred to as heat), therefore the uniformity of temperature is very big for film quality influence, and influences
One of the key factor of product uniformity, and temperature uniformity mostlys come from the shape and design of pyrotoxin.Based on above-mentioned,
In order in MOCVD system, there is good temperature uniformity to control during growing up film, the utility model design
A kind of clad type heating device applied to Metalorganic chemical vapor deposition system.However, first to illustrate, in this reality
With the novel heating device primarily directed to reaction cavity, about other devices or equipment of MOCVD system, with the prior art
It is identical, nor the technical solution that the utility model mainly discusses, therefore not for other devices or equipment of MOCVD system
It can discuss herein.
Referring first to Fig. 1.Fig. 1 is the clad type heating device indicated applied to Metalorganic chemical vapor deposition system
Schematic diagram.In Fig. 1, reaction cavity 10 is made of upper end 102, bottom end 104, side 106,108, with upper end 102 and bottom
There is gas input 12 on the vertical one of side wall 108 in end 104, other side walls 104, upper end 102 and bottom end 104 are
Closed end.It is noted that reaction cavity 10 be a hexahedral rectangle solid chamber, by upper end 102, bottom end 104 and with
The inside 110 of the composition reaction cavity 10 of four side walls 106,108 of upper end 102 and bottom end 104 vertically, and four side walls 106,
Have in 108 on a side wall 108 have gas input 12 then other three side walls are then closed end (also known as sealing surface).?
It is to indicate that there is gas input 12 on side wall 108 in Fig. 1, gas can also be equipped in side wall 106 in other embodiments
Body input terminal 12, or one of side wall setting gas input 12 in other two side wall (not shown in the figure).
In addition, it is noted that in the upper end 102, bottom end 104 and side wall of the reaction cavity 10 of the utility model meaning
106,108 refer to reaction cavity 10 inside 110 region.
Then, please continue to refer to Fig. 1.In the upper end of reaction cavity 10 102 be arranged first heater 20, this first plus
Thermal 20 is provided towards the inside of reaction cavity 10 110 by the upper end 102 of reaction cavity 10 and carries out film deposition reaction when institute
The first heat source 202 needed, wherein heat exchange pattern of first heat source 202 in the inside of reaction cavity 10 110 can be with anti-
Hot width is flowed in a manner of laminar flow and/or utilized to the thermal convection for answering the inside 110 of cavity 10 in the inside of reaction cavity 10 110
The mode penetrated is flowed towards four side walls 106,108 of reaction cavity 10.Another purpose of first heater 20 is to use
Come provide control reaction cavity 10 inside 110 the first temperature so that the inside 110 of entire reaction cavity 10 is at any time
Under conditions of a constant temperature, subsequent thin film deposition process is carried out under a stable environment, so as to
Obtain the preferable film of quality.In the more preferably embodiment of the utility model, first heater 20 is thermal resistance type line
Circle.This thermal resistance type coil is wound in the upper end 102 of the inside 110 of reaction cavity 10 in concentric circles
And then, with reference also to Fig. 1.Carrier 30 is equipped between the upper end of reaction cavity 10 102 and bottom end 104, this
Substrate 40 of the carrier 30 to carry thin film deposition process to be carried out, in the embodiments of the present invention, carrier 30
Size is greater than substrate 40, and carrier 30 can be replaced according to the size of substrate 40.In the utility model, carrier
30 material can be the heat-absorbing material with heat absorption function, such as quartzy or graphite, the utility model even more preferably
Use the carrier 30 being made into graphite.
Then, it is equipped with secondary heating mechanism 22 in the bottom end of reaction cavity 10 104, this secondary heating mechanism 22 is by reacting
Secondary Heat Source 222 required for the bottom end 104 of cavity 10 is provided towards the substrate 40 being arranged on carrier 30, this Secondary Heat Source
222 are to provide the heat other than carrying out heat required for film deposition reaction on the substrate 40, so that substrate 40 is still
Lower second temperature can be maintained, in the present invention, first heat source 202 as provided by first heater 20
First temperature can be higher than the second temperature of the Secondary Heat Source 222 as provided by secondary heating mechanism 22, wherein the first temperature range
It is 200 DEG C -1300 DEG C for 200 DEG C -1300 DEG C and second temperature range.In the more preferably embodiment of the utility model, the
Two heating devices 22 are thermal resistance type coil, radio-frequency coil (RF coil) or illuminated heater.
In the present invention, it is using the advantages of additional increased first heater 20: due to thin in MOCVD
Film is grown up during three races (III group) nitride, and reactant is other than contributing in epitaxy growth, it is also possible to because attached
Produced on the side wall 106,108 of reaction cavity 10 and can not grow up contributive product to epitaxy or film deposits
During the deposition of the transiting product for not forming tri-nitride be even condensed into polymer instead so that being supplied in
The gas supply source of growth such as reacting gas source and carrying gas source, wherein reacting gas source can be organometallic reaction source
And carrying gas source can be arsenic hydride (AsH3), hydrogen phosphide (PH3) or ammonia (NH3) consume is generated, it is anti-for this kind of consumption
It answers object but not have contributive reaction to be then defined as side reaction epitaxy growth, the product generated, mistake is reacted in side reaction
Cross product, can use Secondary Heat Source 202 caused by first heater 20 remove reaction cavity 10 side wall 106,
Other than the problem of invalid product on 108, the side wall 106,108 in addition to that can improve reaction cavity 10 cleans, it can also subtract
The generation of few side reaction, allow reacting gas source and carry gas source almost react, and reduce reaction gas
Body source and the consume for carrying gas, reduce the cost of thin film manufacture process.
Second advantage is, increases first heater 20 during it can improve on epitaxy in reaction cavity 10,
10 thermal field uniformity of reaction cavity.Due in horizontal reaction cavity 10, gas supply source 50 by reaction cavity 10 gas
Input terminal 12 is directed in the inside 110 of reaction cavity 10, only one heating device (only has the second heating in the prior art
Device 22) situation under, the flow direction of gas is just horizontally oriented X, and vertical direction Y is then air-flow to be considered for anti-
The viscid effect of power of the upper and lower cavity body wall (or furnace wall) of cavity 10 is answered, therefore in only one secondary heating mechanism 22
The rate curve of the air-flow of the inside 110 of reaction cavity 10 is parabola, and has plus the distribution of gas phase temperature with airflow rate
Close, thus the thermal field of the inside 110 of reaction cavity 10 can with the speed of airflow rate and difference so that reaction cavity 10
The thermal field of inside 110 be unevenly distributed, so that thermal field is unevenly distributed when carrying out thin film deposition process, be formed by film
Thickness is also uneven, and film quality reduces.However, in the present invention, in substrate 40, reaction cavity 10 upper end 102 and
Bottom end 104 is all the source of heat source, can be in temperature gradient through air-flow transferring heat energy between substrate 40 and carrier 30
Distribution, so that the Gas concentration distribution of the inside 110 of reaction cavity 10 is uniform, gas velocity is evenly distributed, so that thermal field is by upper
To lower uniform distribution, very big thermal field layer is not had and is generated, to solve when carrying out thin film deposition process, thermal field distribution
Unevenly, it is also uneven to be formed by film thickness, film quality reduce the technical issues of.
Third is the advantage is that as the first heat source 202 of offer of first heater 20 and secondary heating mechanism 22 are mentioned
The Secondary Heat Source 222 of confession, so that the temperature gradient of the inside 110 of reaction cavity 10 is reduced, and whole gas phase temperature increases, across
More energy barrier crash response generate required for compound quantity increase, i.e., reactant production quantity increase, should not by-product
Production quantity is reduced, the effective quality for providing materials chemistry reaction and promoting thin-film material.
According to the above-mentioned clad type heating device applied to Metalorganic chemical vapor deposition system, the utility model is also taken off
The design cycle step of the clad type heating device applied to Metalorganic chemical vapor deposition system is revealed.Referring to FIG. 2, simultaneously
Fig. 1 is cooperated to illustrate together simultaneously.Fig. 2 is the clad type heating device indicated applied to Metalorganic chemical vapor deposition system
Design cycle step schematic diagram.
In step 60: first heater is set to the upper end of reaction cavity.In step 62: redesigning reaction cavity
Inside water route pipeline system.Step 64: carrying out the receipts of thermal field data to the inside of reaction cavity using temperature control equipment
Collection.In this step, temperature control equipment (not shown in the figure) can be temperature sensor, for collecting when the first heating
Device 20 provide the first heat source 202 when the inside 110 of reaction cavity 10, in the inside of reaction cavity 10 110 by upper end 102 to
The temperature of bottom end 104 and side wall 106,108 all positions, the range of temperature can be 200 DEG C -1300 DEG C, at interval of 100
DEG C the temperature difference be collected.In step 66: in each spaced points, collecting the disk of carrier at least 10 temperature from the inside to the outside
Degree evidence.In step 68, the data actually collected simulate and using numerical analysis method, are calculated by reaction cavity
Upper end is to the temperature gradient distribution between bottom end.In step 70, adjusting first heater thermal field according to temperature gradient distribution makes
The inside for obtaining reaction cavity is distributed by upper end to bottom end with uniform thermal field.
Therefore according to the cooperation of above-mentioned Fig. 1 and Fig. 2, traditional organometallic chemistry gas is replaced using clad type heating device
Heating device in phase depositing system provides reaction cavity additional energy, and the substrate on carrier still can maintain
Thin film deposition process is carried out in lower temperature, to be lifted at the uniformity of the layers of material deposited on substrate.In addition,
Increasing secondary heating mechanism in reaction cavity can improve during epitaxy, due to gas concentration in horizontal reaction cavity
It is uniformly distributed, air-flow is Laminar Flow, the caused viscid effect of fluid dynamic, since the upper end of reaction cavity and bottom end have
The distribution of temperature gradient can be presented, so that reaction cavity in thermal energy between substrate and carrier through air-flow transferring heat energy
Interior thermal field from top to bottom can be uniformly distributed, and do not had very big temperature stratification and generated.In addition, being increased on reaction cavity
Secondary heating mechanism can active by invalid product for example, the generation for being attached to reaction chamber body wall, growth can not being contributed to
Object or the not formed tri-nitride of the transiting product of reaction process, which deposit, to be removed, to solve the clean technology of reaction chamber body wall
Problem.
Claims (9)
1. a kind of clad type heating device applied to Metalorganic chemical vapor deposition system characterized by comprising
Reaction cavity has upper end and bottom end, and has gas input the other three side wall in the side of the reaction cavity
For closed end；
First heater is set to the upper end of the reaction cavity, and described by the reaction cavity upside down mentions
Needed first heat source when for carrying out film deposition reaction inside the reaction cavity, and provided by the first heater
First heat source control the reaction cavity the inside the first temperature；
Carrier, the carrier is to bearing substrate；And
Secondary heating mechanism, the secondary heating mechanism are set to the bottom end of the reaction cavity, by the bottom end direction
The carrier provides Secondary Heat Source, so that the carrier absorbs the Secondary Heat Source and maintains the substrate in the second temperature
Degree.
2. being applied to the clad type heating device of Metalorganic chemical vapor deposition system, feature as described in claim 1
It is, further include gas supply source, the gas supply source is connect with the gas input of the reaction cavity.
3. being applied to the clad type heating device of Metalorganic chemical vapor deposition system, feature as claimed in claim 2
It is, the gas supply source includes reacting gas source and carrying gas source.
4. it is applied to the clad type heating device of Metalorganic chemical vapor deposition system as claimed in claim 2 or claim 3, it is special
Sign is that the gas supply source is organometallic reaction source.
5. being applied to the clad type heating device of Metalorganic chemical vapor deposition system, feature as claimed in claim 3
It is, the carrying gas source is arsenic hydride (AsH3), hydrogen phosphide (PH3) or ammonia (NH3)。
6. being applied to the clad type heating device of Metalorganic chemical vapor deposition system, feature as described in claim 1
It is, the first heater is thermal resistance type coil.
7. being applied to the clad type heating device of Metalorganic chemical vapor deposition system, feature as described in claim 1
It is, the board bearing plate is graphite.
8. being applied to the clad type heating device of Metalorganic chemical vapor deposition system, feature as described in claim 1
Be, the secondary heating mechanism be thermal resistance type coil,Radio-frequency coil(RF coil) or illuminated heater.
9. being applied to the clad type heating device of Metalorganic chemical vapor deposition system, feature as described in claim 1
It is, first temperature range is 200 DEG C -1300 DEG C and the second temperature range is 200 DEG C -1300 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822084242.XU CN209508404U (en) | 2018-12-12 | 2018-12-12 | Clad type heating device applied to Metalorganic chemical vapor deposition system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822084242.XU CN209508404U (en) | 2018-12-12 | 2018-12-12 | Clad type heating device applied to Metalorganic chemical vapor deposition system |
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| CN209508404U true CN209508404U (en) | 2019-10-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112680724A (en) * | 2020-12-21 | 2021-04-20 | 苏州雨竹机电有限公司 | Chemical vapor deposition device and temperature control method thereof |
| CN115110064A (en) * | 2022-07-15 | 2022-09-27 | 长鑫存储技术有限公司 | Gas input equipment and gas input method |
-
2018
- 2018-12-12 CN CN201822084242.XU patent/CN209508404U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112680724A (en) * | 2020-12-21 | 2021-04-20 | 苏州雨竹机电有限公司 | Chemical vapor deposition device and temperature control method thereof |
| CN115110064A (en) * | 2022-07-15 | 2022-09-27 | 长鑫存储技术有限公司 | Gas input equipment and gas input method |
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| TR01 | Transfer of patent right |
Effective date of registration: 20191206 Address after: Room 01, 13 / F, central city, 11 Haisheng Road, Tsuen Wan, New Territories, Hong Kong, China Patentee after: Gemini semiconductor manufacturing (Hong Kong) Co., Ltd Address before: Second floor, No.38 Keyi street, Zhunan Town, miaoso County, Taiwan, China Patentee before: JET TECHNOLOGY AND TECHNOLOGY CO., LTD. |
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| TR01 | Transfer of patent right |
Effective date of registration: 20210918 Address after: Room 2208, New Technology Plaza, 34 Dayou street, San Po Kong, Kowloon, China Patentee after: Huipu Co.,Ltd. Address before: Room 01, 13 / F, central city, 11 Haisheng Road, Tsuen Wan, New Territories, Hong Kong, China Patentee before: Gemini semiconductor manufacturing (Hong Kong) Co.,Ltd. |
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| TR01 | Transfer of patent right |