CN204455285U - Reaction chamber and chemical vapor deposition board - Google Patents
Reaction chamber and chemical vapor deposition board Download PDFInfo
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- CN204455285U CN204455285U CN201520111362.8U CN201520111362U CN204455285U CN 204455285 U CN204455285 U CN 204455285U CN 201520111362 U CN201520111362 U CN 201520111362U CN 204455285 U CN204455285 U CN 204455285U
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- well heater
- substrate
- reaction chamber
- outer shroud
- vapor deposition
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Abstract
The utility model provides a kind of reaction chamber, comprise cavity, well heater for carrier substrate and to silicon, and the set collar be sheathed on outside described well heater, set collar comprises inner ring and outer shroud, the substrate of outer shroud on fixing described well heater, the gap described in interior ring filling between outer shroud and described substrate.Inner ring plays very large barrier effect to the space between outer shroud and substrate.The utility model also provides a kind of chemical vapor deposition board, comprise above-mentioned reaction chamber and spray header, after reactant gases enters cavity by spray header, the resultant formed on the surface of well heater greatly reduces, and can improve the quality to substrate chemical vapor deposition.In addition, greatly can extend the cycle of well heater cleaned at regular intervals, effectively reduce the infringement that purge heater brings heater surfaces.
Description
Technical field
The utility model relates to semiconductor applications, particularly relates to a kind of reaction chamber and chemical vapor deposition board.
Background technology
Metallorganic chemical vapor deposition (MOCVD) is a kind of Novel air phase epitaxy growing technology grown up on the basis of vapor phase epitaxial growth (VPE).It is using hydride of the organic compound of III race, II race's element and V, VI race's element etc. as the source material of crystal growth, in pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, grow the thin layer monocrystal material of various III-V race, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution.Crystal growth in usual MOCVD system is all carry out in cold wall quartz (stainless steel) reaction chamber of logical H2 under normal pressure or low pressure (10-100Torr), underlayer temperature is 500 DEG C-1200 DEG C, with radio-frequency induction heated graphite pedestal, H2 carries metallorganics to vitellarium by the fluid supply bubbling of temperature-controllable.
MOCVD needs to carry out under the high temperature conditions, therefore needs pyroreaction chamber to form film.Existing reaction chamber as shown in Figure 1, comprises cavity 1, well heater 2 and the set collar 3 be sheathed on outside well heater 2, and is positioned at the spray header 5 of cavity 1 inner upper.Namely well heater 2 heats substrate 100 for carrier substrate in MOCVD processing procedure 100 (well heater 2 surface has multiple strut member 4, in order to carrier substrate 100, prevents substrate 100 to be excessively heated), makes substrate 100 temperature reach required value; Spray header 5 for reactant gases required in MOCVD processing procedure is passed in chamber 1, with at substrate 100 surface reaction film former.
In existing reaction chamber, substrate 100 need be positioned on well heater 2, and is fixed by set collar 3.But the size being positioned over the substrate 100 on well heater 2 can not be equal to the orifice sizes of set collar 3, therefore there is space 6 unavoidably between set collar 3 and substrate 100.Because heater surfaces is led in the bottom in space 6, therefore also there is higher temperature, the reactant gases that spray header 5 passes into also can in hole 6 film forming, the film forming of this part can cause detrimentally affect to the film forming of substrate surface in the technique in later stage.Concrete reason is, the convection current that the heating of well heater 2 and spray header 5 produce, and the resultant in hole 6 can float to substrate 100 surface, and effects on surface film forming causes damage.In order to head it off, existing well heater 2 has coarse surface usually, to stick the resultant in space 6 as far as possible, prevents resultant to be floated to the surface of substrate 100.
But along with MOCVD repeatedly carrying out in chamber 1, the resultant in space 6 can increase gradually, when resultant is abundant, the uneven surface of well heater 2 is not enough to stick resultant completely, therefore needs to do regular maintenance to well heater 2.Concrete maintaining method is: regularly take off set collar 3, and cleans the surface of well heater 2.But the regular maintenance process of well heater 2 can make the surface of well heater 2 become more and more smooth, cause to the clinging power of the resultant entered in space 6 worse and worse.Therefore, excessively clean well heater 2, cannot ensure good clinging power in the MOCVD process in later stage.
Utility model content
The technical problems to be solved in the utility model prevents the excessive film forming of heater surfaces, affects the film process of substrate surface.Based on this, the utility model provides a kind of reaction chamber, comprising:
Cavity, the well heater for carrier substrate and to silicon, and be sheathed on the set collar outside described well heater; Described set collar comprises inner ring and outer shroud, the substrate of described outer shroud on fixing described well heater, the gap described in described interior ring filling between outer shroud and described substrate.
Optionally, described inner ring is close to the inner side setting of described outer shroud.
Optionally, the surface elevation of described outer shroud is higher than the surface elevation of described well heater.
Optionally, the surface elevation of described inner ring is not less than the surface elevation of described well heater.
Optionally, the surface of described well heater has strut member, for supporting described substrate.
Optionally, the outside of described well heater has the depressed part of corresponding described set collar, for carrying described set collar.
Optionally, described depressed part has uneven surface.
The utility model also provides a kind of chemical vapor deposition board, comprises above-mentioned reaction chamber; And spray header, be positioned at described inside cavity, for being passed in described cavity by reactant gases.
Optionally, described spray header is positioned at the top of described cavity, and is oppositely arranged with described well heater.
Optionally, described chemical vapor deposition board is metallorganic chemical vapor deposition board.
In reaction chamber of the present utility model, inner ring plays very large barrier effect to the space between outer shroud and substrate.Chemical vapor deposition board of the present utility model comprises above-mentioned reaction chamber and spray header, and after reactant gases enters cavity by spray header, the resultant formed on the surface of well heater greatly reduces, and can improve the quality to substrate chemical vapor deposition.In addition, greatly can extend the cycle of well heater cleaned at regular intervals, effectively reduce the infringement that purge heater brings heater surfaces.
Accompanying drawing explanation
Fig. 1 is reaction chamber schematic diagram of the prior art.
Fig. 2 is the schematic diagram of reaction chamber described in the utility model one embodiment.
Fig. 3 is the schematic diagram of chemical vapor deposition board described in the utility model one embodiment.
Fig. 4 is the stereographic map of reaction chamber described in the utility model one embodiment.
Embodiment
Regular maintenance due to heater surfaces can weaken the clinging power of heater surfaces, affect the film forming on successive substrates surface, contriver expects head it off root, namely reduce the surface preventing reactant gases contact heater as far as possible, make reactant gases as much as possible in substrate surface reactions film forming.Reaction chamber of the present utility model is proposed accordingly.
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, aid illustration the utility model embodiment lucidly.
As shown in Figure 2, reaction chamber of the present utility model comprises cavity 10, the well heater 20 heated for carrier substrate 1000 and to substrate 1000, and the set collar 30 be sheathed on outside described well heater 20, wherein set collar 30 comprises inner ring 32 and outer shroud 31, described outer shroud 31 is for the substrate 1000 on fixing described well heater 20, and described inner ring 32 fills the gap between described outer shroud 31 and described substrate 1000.
In the present embodiment, the inner side that inner ring 32 is close to outer shroud 31 is arranged, and forms a circle, to block the space between outer shroud 31 and inner ring 32 in the inner side of outer shroud 31.Thus, the surrounding of substrate 1000 reduces greatly with the space at set collar 30 edge, effectively can reduce reactant gases and enter space and the surface of contact heater 20.Concrete, inner ring 32 wraps inner side and the below of outer shroud 31, and its cross section is L-shaped.Under normal circumstances, inner ring 32 and outer shroud 31 have a style of one's own, and certain inner ring 32 also can disassemble and be used alone outer shroud 31.For concrete shape and the structure of inner ring 32, the utility model is not restricted, as long as can play the effect of filling gap between described outer shroud 31 and described substrate 1000.
As shown in Figure 2, the surface elevation of outer shroud 31 is higher than the surface elevation of well heater 20, and the object of so design is to carry out spacing, to fix the position of substrate 1000 from surrounding to the substrate 1000 be positioned on well heater 20; The surface elevation of inner ring 32 is not less than the surface elevation of described well heater 20, namely can equal the surface elevation of well heater 20, also can higher than the surface elevation of well heater 20, in the space that so can prevent resultant of reaction from entering between outer shroud 31 and substrate 1000.For the concrete height of inner ring 32 and outer shroud 31, the utility model is not restricted.
Reaction chamber 10 of the present utility model also comprises strut member 40, is arranged at the surface of well heater 20, for supporting described substrate 1000, preventing the surface of well heater 20 from directly contacting the surface of substrate 1000, causing the superheated to substrate 1000.Concrete, the quantity of strut member 40 is 4, and it is highly equal, can steadily hold up substrate 1000, makes the surface maintenance level of substrate 1000, is beneficial to the uniform film of growth thickness on substrate 1000.
The concrete shape of well heater 20 is middle high, and surrounding is low, forms the depressed part of ring-type, to carry set collar 30 in surrounding.When set collar 30 is positioned on depressed part, as shown in Figure 4, at the groove 200 that the intermediate formation one of well heater 20 is circular, with accommodating substrates 1000.
The utility model also provides a kind of chemical vapor deposition board, as shown in Figure 3, specifically on the basis of above-mentioned reaction chamber, increase spray header 50, spray header 50 is positioned at the inside of described cavity 10, and be positioned at the top of cavity 10, be oppositely arranged with well heater 20, for reactant gases being passed in described cavity 10.
Above-mentioned chemical vapor deposition board can be used in MOCVD processing procedure, to solve the technical problem described in background technology.The working process of above-mentioned chemical vapor deposition board of the present utility model is described below in detail as example.
First, the set collar 30 comprising outer shroud 31 and inner ring 32 is sheathed on well heater 20 around, to form groove 200 on the surface of well heater; Now can be placed into needing the substrate 1000 carrying out MOCVD processing procedure in this groove 200.Then, heater 20 pairs of substrates 1000 heat, and open spray header 50, in cavity 10, pass into reactant gases when being heated to temperature required, be such as the mixed gas of TDMAT (amino titanium) and helium, with the Surface Creation titanium nitride membrane at substrate 1000.
Reaction chamber described in the utility model is owing to having the inner ring 32 between outer shroud 31 and substrate 1000, and very large barrier effect is played in the space between inner ring 32 pairs of outer shrouds 31 and substrate 1000.Therefore, after reactant gases enters chamber 10 by spray header 50, the resultant formed on the surface of well heater 20 greatly reduces, and can improve the quality to substrate 1000 chemical vapor deposition.In addition, greatly can extend the cycle of well heater 2 cleaned at regular intervals, effectively reduce the infringement that purge heater 2 pairs of well heater 2 surfaces are brought.
Obviously, those skilled in the art can carry out various change and modification to utility model and not depart from spirit and scope of the present utility model.Like this, if these amendments of the present utility model and modification belong within the scope of the utility model claim and equivalent technologies thereof, then the utility model is also intended to comprise these change and modification.
Claims (10)
1. a reaction chamber, comprises cavity, the well heater for carrier substrate and to silicon, and is sheathed on the set collar outside described well heater; It is characterized in that, described set collar comprises inner ring and outer shroud, the substrate of described outer shroud on fixing described well heater, the gap described in described interior ring filling between outer shroud and described substrate.
2. reaction chamber as claimed in claim 1, is characterized in that, the inner side that described inner ring is close to described outer shroud is arranged.
3. reaction chamber as claimed in claim 1, is characterized in that, the surface elevation of described outer shroud is higher than the surface elevation of described well heater.
4. reaction chamber as claimed in claim 1, it is characterized in that, the surface elevation of described inner ring is not less than the surface elevation of described well heater.
5. reaction chamber as claimed in claim 1, it is characterized in that, the surface of described well heater has strut member, for supporting described substrate.
6. reaction chamber as claimed in claim 1, it is characterized in that, the outside of described well heater has the depressed part of corresponding described set collar, for carrying described set collar.
7. reaction chamber as claimed in claim 6, it is characterized in that, described depressed part has uneven surface.
8. a chemical vapor deposition board, is characterized in that, comprises
Reaction chamber as described in claim 1-7 any one; And
Spray header, is positioned at described inside cavity, for being passed in described cavity by reactant gases.
9. chemical vapor deposition board as claimed in claim 8, it is characterized in that, described spray header is positioned at the top of described cavity, and is oppositely arranged with described well heater.
10. chemical vapor deposition board as claimed in claim 8, it is characterized in that, described chemical vapor deposition board is metallorganic chemical vapor deposition board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520111362.8U CN204455285U (en) | 2015-02-15 | 2015-02-15 | Reaction chamber and chemical vapor deposition board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520111362.8U CN204455285U (en) | 2015-02-15 | 2015-02-15 | Reaction chamber and chemical vapor deposition board |
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| Publication Number | Publication Date |
|---|---|
| CN204455285U true CN204455285U (en) | 2015-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520111362.8U Expired - Fee Related CN204455285U (en) | 2015-02-15 | 2015-02-15 | Reaction chamber and chemical vapor deposition board |
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| CN (1) | CN204455285U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107435141A (en) * | 2017-08-04 | 2017-12-05 | 武汉华星光电技术有限公司 | Chemical vapor depsotition equipment |
-
2015
- 2015-02-15 CN CN201520111362.8U patent/CN204455285U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107435141A (en) * | 2017-08-04 | 2017-12-05 | 武汉华星光电技术有限公司 | Chemical vapor depsotition equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150708 Termination date: 20190215 |