CN202390579U - Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method - Google Patents
Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method Download PDFInfo
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- CN202390579U CN202390579U CN2011205128323U CN201120512832U CN202390579U CN 202390579 U CN202390579 U CN 202390579U CN 2011205128323 U CN2011205128323 U CN 2011205128323U CN 201120512832 U CN201120512832 U CN 201120512832U CN 202390579 U CN202390579 U CN 202390579U
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- crucible
- silicon carbide
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- deflection cone
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Abstract
A graphite crucible for growing a silicon carbide single crystal by using a physic gaseous phase transport method comprises a crucible body and a top cover. A platform is arranged on the circumference of the inner wall of the crucible body, a river diversion cone is arranged on the platform, the river diversion cone is a barrel in a shape of a circular truncated cone, and the top size of the river diversion cone is matched with the size of seed sheets on the top cover. A lifting device is arranged on the top cover, the lifting device comprises a lifting disc and a lifting shaft which are in threaded connection, and the lower portion of the lifting disc is in threaded connection with the top cover. The river diversion cone is arranged in the crucible body and enables silicon carbide gas under high temperature to be gathered on the surface of a seed, and an inner cone of the top cover and the river diversion cone form a complementary shape to reduce effusion of the gas, so that close range equilibrium state growth of the silicon carbide is achieved, and quality of silicon carbide crystal is improved. The lifting disc is arranged on the upper portion of the top cover of the graphite crucible, after an experiment is finished, another experiment can be carried out by changing the top cover only, other parts can be reused, and productivity of silicon carbide is further improved.
Description
Technical field
The utility model relates to a kind of plumbago crucible, is mainly used in physical vapor transport method (PVT) growing silicon carbide single crystal.
Background technology
Silit is a kind of wide band gap semiconducter.Compare with other semi-conductors such as silicon, gallium arsenide; Carborundum crystals has broad stopband, high critical field strength, high heat conductance, low-k, high electron mobility, radioprotective, the solid characteristic such as wear-resistant of puncturing, and is the ideal material of making high frequency, high-power, high temperature resistant and radioprotective device.
Physical vapor transports the generally employing of quilt aspect the SiC crystal growth of (PVT) method at present, and the researchist has also grown commercial SiC wafer with this method.The principal character of PVT method is to add seed crystal at the crucible top, makes that the nucleating growth process can be controlled, and its temperature is from 1800 ℃ to 2600 ℃.The process of this method can be summarized as: seed crystal is fixed on the crucible top; Put into a certain amount of powder in crucible bottom; Under certain air pressure conditions, crucible is heated; Make the inner temperature of crucible field reach requirement, the crucible bottom powder at high temperature decomposes or react the gaseous fraction of generation crystal growth, and finally these gaseous fractions are transported to seed crystal face place, crucible top and deposition growing obtains the SiC crystal under the effect of thermograde.
During the SiC crystal growth, in the crucible from the powder to the seed crystal between temperature reduce gradually, form certain thermograde because the existence of thermograde, make in the crucible from the source to the crystal seed between the concentration of gas molecule different, promptly thermograde has determined concentration gradient.Defectives such as the minor fluctuations of thermograde and concentration gradient is the one of the main reasons that defective forms, and when having the difference of temperature, concentration on the seed crystal, the crystal of growth can produce microtubule, dislocation, be mingled with.Reduce the distance between seed crystal and the powder, growing silicon carbide single crystal under near the condition of equilibrium state can reduce temperature and concentration gradient fluctuation odds, thereby improve the crystalline quality.
Adopt the equipment claimed of physical vapor transport method growing silicon carbide single crystal adopt plumbago crucible as container to bear 2300 ℃ of pyritous environment.Usually; The top cover of plumbago crucible does not have relative movement with crucible itself in experiment; So when reducing distance between seed crystal and the powder when improving the quality of silit; The productive rate of silit can reduce greatly, and when increasing distance between seed crystal and the powder when improving the productive rate of silit, the quality of silit can reduce greatly.
The utility model content
To the existing limitation of plumbago crucible structure in experiment; The purpose of the utility model is to provide a kind of physical vapor transport method growing silicon carbide single crystal to use plumbago crucible; Through its structure is improved,, improve the quality of carborundum crystals to realize closely equilibrium state growth of silit; Realize lifting of process of growth carborundum crystals simultaneously, improve the productive rate of silit.
For realizing above-mentioned purpose, the utility model adopts following technical scheme:
A kind of physical vapor transport method growing silicon carbide single crystal is used plumbago crucible; Comprise crucible body and top cover, this crucible body inwall circumference is provided with platform, and this platform is provided with deflection cone; This deflection cone is round table-like cylindrical shell, and the size of seed wafer is complementary on its top dimension and the top cover; Said top cover is provided with pulling apparatus.
Said pulling apparatus comprises and lifts dish and lift axle, and this lifts dish and is threaded with lifting between the axle, and this bottom that lifts dish is threaded with top cover.
The shape of said top cover and the shape complementarity of said deflection cone, slope of the vertebra conical surface is more than or equal to the slope of the said deflection cone conical surface in it.
The upper surface of said top cover is provided with groove, and the position of seed wafer is corresponding on the position of this groove and the top cover.
The said dish that lifts is provided with through hole on the central position.
Distance between the outer cylinder of said top cover and the crucible body inwall is 1-3mm.
Said deflection cone is arranged on the middle and upper part of crucible body, and its height is a little less than the distance of said platform to the crucible top.
The wall thickness of said crucible body is 5-15mm, and the wall thickness of said deflection cone is 3-5mm.
The width of said platform is 3-7mm, is preferably 5mm.
The advantage of the utility model is:
The plumbago crucible of the utility model; In the crucible body, deflection cone is set; Deflection cone arrives seed crystal face with silit gas constriction under the high temperature; Top cover inner cone and deflection cone form the loss that the complementary shape has alleviated gas, thereby realize closely equilibrium state growth of silit, improve the quality of carborundum crystals.The top cover top of this plumbago crucible is provided with lifts dish, after experiment finishes, only needs to change top cover and just can do experiment once more, and remaining part can be reused, and has further improved the productive rate of silit.
Description of drawings
Fig. 1 is the cross-sectional view of the utility model.
Fig. 2 is the vertical view of the utility model.
Fig. 3 is the structural representation of the utility model top cover.
Fig. 4 is the vertical view of the utility model top cover.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described further.
Like Fig. 1, shown in 2, the plumbago crucible of the utility model comprises crucible body 1, top cover 4, deflection cone 5 and by lifting dish 3 and lifting the pulling apparatus that axle 2 is formed.Deflection cone 5 is round table-like tube structure, is arranged in the crucible body 1, can on the inwall circumference of crucible body, set out platform, and deflection cone is placed on this platform, and the size of seed wafer is complementary on its top dimension and the top cover; This lifts dish 3 and is threaded between 2 with lifting axle, and this lifts and coils bottom of 3 and be threaded with top cover 4, thereby is combined into the stretching structure of an integral body.Sic powder 7 is placed in the crucible body 1, when being heated to high temperature, the sic powder volatilization form gas in the constriction effect current downflow of deflection cone 5 to seed wafer 6 surfaces.
The wall thickness of crucible body 1 is 5-15mm, and thin-walled crucible body heating efficiency is high, but under the gaseous corrosion effect, is prone to perforation, and heavy wall crucible body heating efficiency is too low.
And the size of platform depend on the crucible body wall thick with deflection cone processing thickness, be 3-7mm, consider processing factors and crucible body internal space factor to be preferably 5mm.
In conjunction with Fig. 3, shown in Figure 4, the shape complementarity of the shape of top cover 4 and deflection cone 5, slope of the vertebra conical surface 10 equals the slope of the deflection cone conical surface in it.In order further to prevent the loss of silit atmosphere, to realize closely equilibrium state growth of silit, slope of the vertebra conical surface 10 can be slightly larger than the slope of the deflection cone conical surface in this.The upper surface of top cover 4 also is provided with groove 8, and the position of seed wafer is corresponding on the position of this groove and the top cover.The purpose that groove is set is, when crucible is heated to high temperature, makes seed wafer bonding plane 9 that suitable temperature field arranged, and therefore, the size of groove depends on The results of numerical simulation.
Behind growing silicon carbide single crystal, only need to change top cover and just can do experiment once more, remaining part can be reused, and has further improved the productive rate of silit.
Claims (10)
1. a physical vapor transport method growing silicon carbide single crystal is used plumbago crucible; Comprise crucible body and top cover; It is characterized in that: this crucible body inwall circumference is provided with platform; This platform is provided with deflection cone, and this deflection cone is round table-like cylindrical shell, and the size of seed wafer is complementary on its top dimension and the top cover; Said top cover is provided with pulling apparatus.
2. plumbago crucible according to claim 1 is characterized in that: said pulling apparatus comprises and lifts dish and lift axle, and this lifts dish and is threaded with lifting between the axle, and this bottom that lifts dish is threaded with top cover.
3. plumbago crucible according to claim 1 is characterized in that: the shape of said top cover and the shape complementarity of said deflection cone, slope of the vertebra conical surface is more than or equal to the slope of the said deflection cone conical surface in it.
4. plumbago crucible according to claim 1 is characterized in that: the upper surface of said top cover is provided with groove, and the position of seed wafer is corresponding on the position of this groove and the top cover.
5. plumbago crucible according to claim 2 is characterized in that: the said dish that lifts is provided with through hole on the central position.
6. plumbago crucible according to claim 3 is characterized in that: the distance between the outer cylinder of said top cover and the crucible body inwall is 1-3mm.
7. plumbago crucible according to claim 1 is characterized in that: said deflection cone is arranged on the middle and upper part of crucible body, and its height is a little less than the distance of said platform to the crucible top.
8. according to each described plumbago crucible of claim 1-7, it is characterized in that: the wall thickness of said crucible body is 5-15mm, and the wall thickness of said deflection cone is 3-5mm.
9. plumbago crucible according to claim 8 is characterized in that: the width of said platform is 3-7mm.
10. plumbago crucible according to claim 9 is characterized in that: the width of said platform is 5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205128323U CN202390579U (en) | 2011-12-09 | 2011-12-09 | Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205128323U CN202390579U (en) | 2011-12-09 | 2011-12-09 | Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method |
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| Publication Number | Publication Date |
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| CN202390579U true CN202390579U (en) | 2012-08-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011205128323U Expired - Lifetime CN202390579U (en) | 2011-12-09 | 2011-12-09 | Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106012002A (en) * | 2016-06-04 | 2016-10-12 | 山东大学 | Method for growth of SiC crystal for off-axis substrate and method for preparing N type SiC substrate with high electric uniformity |
| CN106637410A (en) * | 2016-12-30 | 2017-05-10 | 珠海鼎泰芯源晶体有限公司 | Crucible device |
| WO2017113368A1 (en) * | 2015-12-29 | 2017-07-06 | 中国科学院上海硅酸盐研究所 | Crucible for growth of silicon carbide crystal |
| CN106929913A (en) * | 2015-12-29 | 2017-07-07 | 中国科学院上海硅酸盐研究所 | A kind of split type growing silicon carbice crystals crucible |
| CN110512281A (en) * | 2019-09-26 | 2019-11-29 | 衡水学院 | The method for quickly preparing silicon carbide |
| CN110656376A (en) * | 2019-09-18 | 2020-01-07 | 河北同光晶体有限公司 | Method for preparing silicon carbide single crystal based on controllable growth center |
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| CN112813499A (en) * | 2020-12-31 | 2021-05-18 | 山东天岳先进科技股份有限公司 | Preparation method and growth device of N-type silicon carbide crystal |
| TWI811883B (en) * | 2021-12-08 | 2023-08-11 | 國家中山科學研究院 | Method for Adjusting Thermal Field of Silicon Carbide Single Crystal Growth |
-
2011
- 2011-12-09 CN CN2011205128323U patent/CN202390579U/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017113368A1 (en) * | 2015-12-29 | 2017-07-06 | 中国科学院上海硅酸盐研究所 | Crucible for growth of silicon carbide crystal |
| CN106929913A (en) * | 2015-12-29 | 2017-07-07 | 中国科学院上海硅酸盐研究所 | A kind of split type growing silicon carbice crystals crucible |
| CN106929919A (en) * | 2015-12-29 | 2017-07-07 | 中国科学院上海硅酸盐研究所 | A kind of growing silicon carbice crystals crucible |
| CN106012002B (en) * | 2016-06-04 | 2018-06-19 | 山东大学 | A kind of preparation method of the N-type SiC substrate of the growth of off-axis substrate SiC crystal and high electricity uniformity |
| CN106012002A (en) * | 2016-06-04 | 2016-10-12 | 山东大学 | Method for growth of SiC crystal for off-axis substrate and method for preparing N type SiC substrate with high electric uniformity |
| CN106637410B (en) * | 2016-12-30 | 2019-03-26 | 珠海鼎泰芯源晶体有限公司 | Crucible device |
| CN106637410A (en) * | 2016-12-30 | 2017-05-10 | 珠海鼎泰芯源晶体有限公司 | Crucible device |
| CN110656376A (en) * | 2019-09-18 | 2020-01-07 | 河北同光晶体有限公司 | Method for preparing silicon carbide single crystal based on controllable growth center |
| CN110512281A (en) * | 2019-09-26 | 2019-11-29 | 衡水学院 | The method for quickly preparing silicon carbide |
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| US11499246B2 (en) | 2020-03-30 | 2022-11-15 | Hunan Sanan Semiconductor Co., Ltd. | Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the same |
| CN112813499A (en) * | 2020-12-31 | 2021-05-18 | 山东天岳先进科技股份有限公司 | Preparation method and growth device of N-type silicon carbide crystal |
| TWI811883B (en) * | 2021-12-08 | 2023-08-11 | 國家中山科學研究院 | Method for Adjusting Thermal Field of Silicon Carbide Single Crystal Growth |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190624 Address after: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Research Institute of engineering and Technology Co., Ltd. Address before: 100088 No. 2 Xinjiekouwai Street, Xicheng District, Beijing Patentee before: General Research Institute for Nonferrous Metals |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120822 |