CN206828679U - MPCVD method grows the deposition table of single-crystal diamond - Google Patents
MPCVD method grows the deposition table of single-crystal diamond Download PDFInfo
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- CN206828679U CN206828679U CN201720707933.3U CN201720707933U CN206828679U CN 206828679 U CN206828679 U CN 206828679U CN 201720707933 U CN201720707933 U CN 201720707933U CN 206828679 U CN206828679 U CN 206828679U
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Abstract
A kind of deposition table of MPCVD method growth single-crystal diamond, the deposition table are made up of inside and outside two parts, and outside is the shielding collar, and inside is diamond seed support；Stairstepping through hole is provided with the middle part of the shielding collar, top is quadrangle square hole, and bottom is circular hole；The diamond seed support is ladder shaft-like, and top is square axis, and bottom is circular shaft.The utility model is during microwave plasma CVD grows single-crystal diamond, by shielding shielding action of the collar to microwave electric field, electric field is reduced to its caused edge effect, improve the local controllability of single-crystal diamond synthesis, and diamond seed is set to be in a suitable thermal environment, to promote to carry out the growth of high quality single crystal diamond under Seedling height speed, simultaneously after growth terminates, it is easy to clear up caused deposit or carbide between diamond and seed crystal support contact surface, maintain the good heat conductive between interface, improve the repeatability of single crystal diamond film technological parameter.
Description
Technical field
Microwave plasma CVD technical field is the utility model is related to, more particularly to it is a kind of for microwave etc.
Gas ions chemical vapour deposition technique grows the deposition table of single-crystal diamond.
Background technology
When single crystal diamond film is carried out under high pressure and high power density, the top and side of growth crystal are run into sometimes
Edge has the formation of non-epitaxial feature, causes crystal growth face polycrystalline to be formed and grown, the original of stress is likely due to when serious
It is thus cracked, now need to stop growing, will so limit crystal growth size.The geometry size of deposition table and wait from
The discharge position of son influences the synthetic environment of diamond and the final result of monocrystalline synthesis.If microwave discharge apart from seed crystal compared with
Closely, the discharge condition of plasma can change due to the presence of diamond seed and the size shape of deposition table, then Buddha's warrior attendant
The building-up process of stone can be changed by changing the shape of local deposits platform.
After single crystal diamond film terminates or after more secondary growths, deposition can be produced between seed crystal and seed crystal support contact surface
Thing or carbide, this layer of material can influence the heat conduction between interface, so that influenceing weighing for single crystal diamond film technological parameter
Renaturation.
It is necessary the geometry designs scheme of optimization deposition table, to change the Local treatment environment around single-crystal diamond, together
When be easy to after single crystal diamond film terminates to caused deposit between seed crystal and seed crystal support contact surface or carbide progress
Cleaning, the good heat conductive between seed crystal and seed crystal support is maintained, improve the repeatability of single crystal diamond film technological parameter, it is stable
Crystal growth environment, to promote to carry out the growth of high quality single crystal diamond under Seedling height speed.
The content of the invention
The purpose of this utility model is to provide a kind of MPCVD method that is used for and grows single crystal diamond
The deposition table of stone, can using the deposition table during microwave plasma CVD grows single-crystal diamond
Electric field is reduced to its caused edge effect, improves the local controllability of single-crystal diamond synthesis, and seed crystal is in a conjunction
In suitable thermal environment, while after growth, it is easy to caused deposit or carbide between seed crystal and seed crystal support contact surface
Cleared up, maintain the good heat conductive between interface, improve the repeatability of single crystal diamond film technological parameter, to promote
The growth of high quality single crystal diamond is carried out under Seedling height speed.
The technical solution adopted in the utility model is：
A kind of deposition table for MPCVD method growth single-crystal diamond, deposition table is by inside and outside
Two parts form, and outside is the shielding collar, and inside is diamond seed support.
Further, stairstepping through hole is provided with the middle part of the shielding collar, top is quadrangle square hole, and bottom is circular hole.
Further, the diamond seed support is ladder shaft-like, and top is square axis, and bottom is circular shaft.
Further, the shielding collar and diamond seed support material therefor are metal molybdenum.
Further, in the middle part of the shielding collar quadrangle square hole that is provided with and diamond seed support top square axis it
Between for gap coordinate, interstice coverage 0-0.04mm.
Using the deposition table in microwave plasma chemical it can be seen from above-mentioned technical scheme provided by the utility model
It is vapor-deposited during single-crystal diamond, certain shielding action is played to the microwave electric field under high power density, reduces electricity
Field is to edge effect caused by single-crystal diamond.Simultaneously after single or multiple growths, it is easy to seed crystal and seed crystal support contact surface
Between caused deposit or carbide cleared up.
Brief description of the drawings
In order to illustrate more clearly of the technical solution of the utility model, the accompanying drawing used in embodiment will be done briefly below
To introduce, it is obvious that accompanying drawing below is only one embodiment of the present utility model, for the common staff of this area,
Other accompanying drawings can also be obtained according to this accompanying drawing.
Fig. 1 is to grow single-crystal diamond for MPCVD method described in the utility model is implemented
Deposition table structural representation.
Embodiment
With reference to the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out clear
Chu, it is fully described by, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole realities
Apply example.Based on embodiment of the present utility model, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, belongs to the scope of protection of the utility model.
As shown in figure 1, implementing the MPCVD method that is used for for the utility model grows monocrystalline
The deposition table structural representation of diamond, the deposition table include the outside shielding collar 1 and internal diamond seed support 2,
Single crystal diamond seed crystal 3 is located at the centre position in diamond seed support 2；
The middle part of the shielding collar 1 is provided with stairstepping through hole, and top is quadrangle square hole, and bottom is circular hole；
The diamond seed support 2 is ladder shaft-like, and top is square axis, and bottom is circular shaft, and the upper surface of square axis passes through
Grinding and polishing processing；
The shielding collar 1 and the material therefor of diamond seed support 2 are metal molybdenum；
Between being between quadrangle square hole and the square axis on the top of diamond seed support 2 that the middle part of the shielding collar 1 is provided with
Gap coordinates, gap 0.04mm.
In summary, the deposition table in the utility model is close to high power by the shielding collar outside diamond seed support
The shielding action of the microwave electric field of degree, electric field is reduced to edge effect caused by single-crystal diamond, makes the surface of single-crystal diamond
And edge is in the relatively uniform environment of heat, promote the uniformity of superficial growth, while terminate in single crystal diamond film
After be easy to clear up caused deposit or carbide between seed crystal and seed crystal support contact surface, maintain seed crystal and seed crystal support
Between good heat conductive, improve single crystal diamond film technological parameter repeatability, promote and carried out under Seedling height speed
The growth of high quality single crystal diamond.
It is described above, the only preferable embodiment of the utility model, but the scope of protection of the utility model is not
This is confined to, any one skilled in the art can readily occur in the technical scope that the utility model discloses
Change or replacement, should all cover within the scope of protection of the utility model.Therefore, the scope of protection of the utility model should
It is defined by the protection domain of claims.
Claims (5)
- A kind of 1. deposition table of MPCVD method growth single-crystal diamond, it is characterised in that：It is described Deposition table is made up of inside and outside two parts, and outside is the shielding collar, and inside is diamond seed support.
- 2. the deposition table of MPCVD method growth single-crystal diamond as claimed in claim 1, it is special Sign is：Stairstepping through hole is provided with the middle part of the shielding collar, top is quadrangle square hole, and bottom is circular hole.
- 3. the deposition table of MPCVD method growth single-crystal diamond as claimed in claim 1, it is special Sign is：The diamond seed support is ladder shaft-like, and top is square axis, and bottom is circular shaft.
- 4. the deposition table of MPCVD method growth single-crystal diamond as claimed in claim 1, it is special Sign is：The shielding collar and diamond seed support material therefor are metal molybdenum.
- 5. the deposition table of MPCVD method growth single-crystal diamond as claimed in claim 4, it is special Sign is：Match somebody with somebody between the quadrangle square hole and the square axis on diamond seed support top that are provided with the middle part of the shielding collar for gap Close, interstice coverage 0-0.04mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720707933.3U CN206828679U (en) | 2017-06-16 | 2017-06-16 | MPCVD method grows the deposition table of single-crystal diamond |
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| CN201720707933.3U CN206828679U (en) | 2017-06-16 | 2017-06-16 | MPCVD method grows the deposition table of single-crystal diamond |
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| CN206828679U true CN206828679U (en) | 2018-01-02 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913947A (en) * | 2019-01-31 | 2019-06-21 | 长沙新材料产业研究院有限公司 | Diamond synthesizing substrate and diamond synthesis system with coat |
| CN110042464A (en) * | 2019-04-02 | 2019-07-23 | 西安电子科技大学 | A kind of method of multi-disc single-crystal diamond expanding growth simultaneously |
| CN111074343A (en) * | 2020-01-17 | 2020-04-28 | 北京大学东莞光电研究院 | Sample holder for growing diamond single crystal and diamond single crystal growing method |
| CN111663179A (en) * | 2019-03-05 | 2020-09-15 | 中国科学院物理研究所 | Seed crystal support for growth of single crystal diamond |
| CN111979579A (en) * | 2020-08-24 | 2020-11-24 | 哈尔滨工业大学 | Plasma gathering device for high-speed growth of chemical vapor deposition single crystal diamond |
| CN113355746A (en) * | 2021-06-15 | 2021-09-07 | 上海昌润极锐超硬材料有限公司 | Deposition part and method for enlarging diamond seed crystal area |
| CN113832540A (en) * | 2021-10-09 | 2021-12-24 | 长沙新材料产业研究院有限公司 | Deposition device for diamond growth |
| CN115558902A (en) * | 2022-10-26 | 2023-01-03 | 武汉莱格晶钻科技有限公司 | Substrate table suitable for diamond growth and use method thereof |
-
2017
- 2017-06-16 CN CN201720707933.3U patent/CN206828679U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913947A (en) * | 2019-01-31 | 2019-06-21 | 长沙新材料产业研究院有限公司 | Diamond synthesizing substrate and diamond synthesis system with coat |
| CN111663179A (en) * | 2019-03-05 | 2020-09-15 | 中国科学院物理研究所 | Seed crystal support for growth of single crystal diamond |
| CN110042464A (en) * | 2019-04-02 | 2019-07-23 | 西安电子科技大学 | A kind of method of multi-disc single-crystal diamond expanding growth simultaneously |
| CN111074343A (en) * | 2020-01-17 | 2020-04-28 | 北京大学东莞光电研究院 | Sample holder for growing diamond single crystal and diamond single crystal growing method |
| CN111979579A (en) * | 2020-08-24 | 2020-11-24 | 哈尔滨工业大学 | Plasma gathering device for high-speed growth of chemical vapor deposition single crystal diamond |
| CN113355746A (en) * | 2021-06-15 | 2021-09-07 | 上海昌润极锐超硬材料有限公司 | Deposition part and method for enlarging diamond seed crystal area |
| CN113832540A (en) * | 2021-10-09 | 2021-12-24 | 长沙新材料产业研究院有限公司 | Deposition device for diamond growth |
| CN113832540B (en) * | 2021-10-09 | 2023-10-13 | 航天科工(长沙)新材料研究院有限公司 | Deposition device for diamond growth |
| CN115558902A (en) * | 2022-10-26 | 2023-01-03 | 武汉莱格晶钻科技有限公司 | Substrate table suitable for diamond growth and use method thereof |
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Effective date of registration: 20200602 Address after: 528300 No.2, Zhihui Road, Daliang, Shunde District, Foshan City, Guangdong Province Patentee after: Shunde Graduate School of Beijing University of science and technology Address before: 100083 Haidian District, Xueyuan Road, No. 30, Patentee before: University OF SCIENCE AND TECHNOLOGY BEIJING |