CN107955967A - Growth of Single Crystal Diamond device and method - Google Patents
Growth of Single Crystal Diamond device and method Download PDFInfo
- Publication number
- CN107955967A CN107955967A CN201711243374.6A CN201711243374A CN107955967A CN 107955967 A CN107955967 A CN 107955967A CN 201711243374 A CN201711243374 A CN 201711243374A CN 107955967 A CN107955967 A CN 107955967A
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- growth
- single crystal
- newel
- deposition table
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention relates to Opacity in lens technical field, there is provided a kind of Growth of Single Crystal Diamond device and method.Described device includes：Deposition table and liftable newel；The deposition table is equipped with deposition table hole, and the liftable newel is equipped with the hole post coordinated with the deposition table hole, and the hole post is arranged in the deposition table hole.Described device and method can effectively improve Growth of Single Crystal Diamond quality, and it is too thick to have solved the problems, such as a secondary growth not.
Description
Technical field
The present invention relates to Opacity in lens technical field, and in particular to a kind of Growth of Single Crystal Diamond device and method.
Background technology
Diamond single crystal has excellent physical and chemical performance, has important application in fields such as machinery, electronics, jewelry
Value.In order to realize these applications, it has to be possible to efficiently prepare large area, high thickness, the diamond single crystal of high-quality.
In various chemical vapor deposition method, microwave method with its plasma power density is high, electrodeless discharge pollution,
The characteristics such as performance stabilization become the prefered method for preparing high quality diamond monocrystalline.
But microwave " edge effect " causes diamond seed edge to attract plasma, lip temperature is high, and growth is fast, holds
Easily growth polycrystalline.In order to avoid there is the above problem, a hole is generally processed on base station (such as molybdenum sheet), diamond seed
Be put into hole, the side wall in hole blocks the edge of diamond seed, in the prior art deposition table increase heat-insulated silk and
The method of substrate processing square groove avoids diamond seed edge from overheating, but the main problem of this structure also can on substrate
Diamond is grown, and with the increase of growth thickness, the square groove edge of processing is due to the horizontal development of growth diamond multicrystal
And it is less and less, the growing space of diamond single crystal is tied up, so that cleaning of stopping of having to, causes diamond single crystal one secondary
Long thickness is in below 1mm.It can not efficiently solve that Growth of Single Crystal Diamond is of poor quality, a secondary growth is not too thick in the prior art
The problem of.
The content of the invention
In view of this, an embodiment of the present invention provides a kind of Growth of Single Crystal Diamond device and method, can solve existing
The problem of Growth of Single Crystal Diamond is of poor quality, a secondary growth is not too thick can not be effectively ensured in technology.
The embodiment of the present invention provides a kind of Growth of Single Crystal Diamond device, including：
Deposition table and liftable newel；
The deposition table is equipped with deposition table hole, and the liftable newel is equipped with the hole coordinated with the deposition table hole
Column, the hole post are arranged in the deposition table hole.
Optionally, the Growth of Single Crystal Diamond device, further includes：First transmission mechanism and motor；
First transmission mechanism includes turbine and worm screw, and the turbine is connected with the deposition table, the worm screw and institute
State the connection of liftable newel；
The output shaft of the motor is connected with turbine, for driving the turbine.
Optionally, the Growth of Single Crystal Diamond device, further includes：
Second transmission mechanism and rotation hand wheel；
Second transmission mechanism includes screw and leading screw, and the screw is fixedly connected with the liftable newel, institute
Leading screw is stated to be connected with the screw by bearing；
The rotation hand wheel is connected with the leading screw, for driving the leading screw.
Optionally, the deposition table hole and hole post fit clearance be between 0.5 mm and 1.0 mm；
The material of the deposition table and liftable newel is red copper or stainless steel.
Optionally, the deposition table hole is round hole or square hole, is corresponding with the hole post that the deposition table hole coordinates
Circular columns or square column.
The embodiment of the present invention provides a kind of diamond list of the Growth of Single Crystal Diamond device based on described in any of the above-described
Crystals growth method, it is characterised in that including：
Diamond seed is positioned in the hole post of liftable newel, sunk by using microwave plasma chemical gas phase
Area method carries out Growth of Single Crystal Diamond；
Adjust the liftable newel, make between the diamond seed upper surface and deposition table upper surface it is vertical away from
From holding within a preset range.
Optionally, the diamond seed and the inner wall spacing in the deposition table hole being placed in hole post are in first threshold and second
Between threshold value；
In the preset range between the 3rd threshold value and the 4th threshold value.
Optionally, the first threshold is 1.0mm；The second threshold is 1.5mm；3rd threshold value is 0.2mm；Institute
It is 4.5mm to state the 4th threshold value.
Optionally, the liftable newel is adjusted, is made between the diamond seed upper surface and deposition table upper surface
Vertical range keep within a preset range, including：
In Growth of Single Crystal Diamond, the liftable newel is lowered every the first threshold time, distance is lowered and exists
Between 6th threshold value and the 3rd threshold value.
Optionally, before the first threshold time lowers the liftable newel, further include：
The first threshold time is adjusted and determines according to Growth of Single Crystal Diamond speed；
Wherein, the 6th threshold value is 0.1mm.
Existing beneficial effect is the technical solution that the embodiment of the present invention uses compared with prior art：The embodiment of the present invention
Deposition table and liftable newel be set, and the liftable newel is used to move up and down that to grow into diamond single crystal pre-
If thickness, the deposition table is equipped with deposition table hole, and the liftable newel is equipped with and the deposition table hole coordinates
Hole post, the upper surface of the hole post are used to place diamond seed, and the deposition table hole is used to suppress diamond seed edge mistake
Heat, avoids the generation of diamond multicrystal, and the effective growing space for ensureing diamond single crystal, the hole post is set in the deposition
In platform hole, the growth of diamond single crystal is coordinated by adjusting liftable newel, is effectively improved Growth of Single Crystal Diamond matter
Amount, it is too thick to have solved the problems, such as a secondary growth not.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the Growth of Single Crystal Diamond device schematic cross-section that the embodiment of the present invention one provides；
Fig. 2 is Growth of Single Crystal Diamond method schematic diagram provided by Embodiment 2 of the present invention.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is part of the embodiment of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, the every other implementation that those of ordinary skill in the art are obtained without making creative work
Example, belongs to the scope of protection of the invention.
The Growth of Single Crystal Diamond device provided referring to Fig. 1, the embodiment of the present invention one, including：Deposition table 101 and liftable
Newel 102；The deposition table 101 is equipped with deposition table hole 103, and the liftable newel 102 is equipped with and the deposition
The hole post 104 that platform hole 103 coordinates, the hole post 104 are arranged in the deposition table hole 103.
Referring to Fig. 1, by setting deposition table 101 and liftable newel 102, the liftable newel in the present embodiment
102 are used to move up and down to allow diamond single crystal to grow into default thickness, and the deposition table 101 is equipped with deposition table hole
103, the setting in the deposition table hole 103 can be that a deposition table hole 103 can also be multiple deposition table holes 103, it is described can
Lift newel 102 and be equipped with the hole post 104 coordinated with the deposition table hole 103, the upper surface of the hole post 104 is used to place
Diamond seed, the deposition table hole 103 are used to suppress diamond seed edge overheat, avoid the generation of diamond multicrystal, have
The growing space of the guarantee diamond single crystal of effect, the hole post 104 are set in the deposition table hole 103, can be risen by adjusting
The growth that newel 102 coordinates diamond single crystal is dropped, Growth of Single Crystal Diamond quality is effectively improved, solves a secondary growth
The problem of too thick.
Optionally, the Growth of Single Crystal Diamond device can also include：First transmission mechanism and motor；Described first passes
Motivation structure includes turbine and worm screw, and the turbine is connected with the deposition table 101, the worm screw and the liftable newel
102 connections；The output shaft of the motor is connected with turbine, for driving the turbine.
In the present embodiment, Growth of Single Crystal Diamond device is provided with the first transmission mechanism, and the deposition table 101 passes through first
Transmission mechanism is connected with the liftable newel 102, and the output shaft of the motor, the output of the motor are controlled by motor
Axis is connected with turbine, and then drives the turbine action, and the turbine drives the worm screw action, the turbine and the deposition
Platform 101 connects, and the worm screw is connected with the liftable newel 102, for adjusting the height of liftable newel 102, from
And realize the change of liftable newel 102 and 101 relative distance of deposition table, coordinate Growth of Single Crystal Diamond to default thickness
Degree.
Alternatively, the Growth of Single Crystal Diamond device can also include：Second transmission mechanism and rotation hand wheel；Described second
Transmission mechanism includes screw and leading screw, and the screw is fixedly connected with the liftable newel 102, and the leading screw passes through bearing
It is connected with the screw；The rotation hand wheel is connected with the leading screw, for driving the leading screw.
In the present embodiment, Growth of Single Crystal Diamond device is provided with screw, leading screw and rotation hand wheel, the liftable center
Column 102 is attached by the screw with leading screw, wherein, the top of leading screw can be connected by bearing with screw, leading screw
Lower section can be connected by bearing with the rotation hand wheel, by being adjusted manually to rotation hand wheel, it is possible to achieve leading screw
Rotate, the leading screw is during rotating, and the screw being connected with leading screw can produce length travel, and the screw is arranged on
101 lower position of deposition table, is fixedly connected with the liftable newel 102, and then adjusts on liftable newel 102
Lower movement, so as to fulfill the change of liftable newel 102 and 101 relative distance of deposition table, coordinates Growth of Single Crystal Diamond to arrive
Default thickness, the relative distance are 101 upper surface of deposition table and the upper surface of the hole post 104 of liftable newel 102.
Optionally, the deposition table hole 103 and 104 fit clearance of hole post be between 0.5 mm and 1.0 mm；The deposition table
101 and the material of liftable newel 102 can be red copper or stainless steel.
In the present embodiment, the setting of the deposition table hole 103 and 104 fit clearance of hole post is used to coordinate adjustable newel
Lifting, since diamond seed is placed in the hole post 104, to various sizes of diamond seed, should design with
Matched different size of deposition table hole 103 and hole post 104, the deposition table 101 and liftable newel 102 are all direct
Water cooling, heat dissipation effect is higher than air cooling system, then the material of the deposition table 101 and liftable newel 102 can be red copper,
It can be stainless steel.
Wherein, the deposition table hole 103 is round hole or square hole, the hole post 104 coordinated with the deposition table hole 103
For corresponding circular columns or square column.
In the present embodiment, need to be placed on the upper table of the hole post 104 of the liftable newel 102 due to diamond seed
Face, the setting of the hole post 104 is easy to the generation of diamond single crystal, then the deposition that the device of the Growth of Single Crystal Diamond is set
Platform hole 103 can be round hole or square hole, the hole post 104 coordinated with the deposition table hole 103 for corresponding circular columns or
Person's square column.
Referring to Fig. 2, the diamond single crystal provided by Embodiment 2 of the present invention based on above-mentioned Growth of Single Crystal Diamond device
Growing method, including：
Step S201, diamond seed is positioned in the hole post of liftable newel, by using microwave plasma
Chemical vapour deposition technique carries out Growth of Single Crystal Diamond.
Growth of Single Crystal Diamond method can be realized based on above-mentioned Growth of Single Crystal Diamond device in the present embodiment, its
Specific implementation principle may refer to above-described embodiment, and details are not described herein again.
Liftable newel can be equipped with the Growth of Single Crystal Diamond device, can be equipped with the liftable newel
Hole post, wherein, the hole post can be circular columns, can also be square column, Buddha's warrior attendant can be placed in the upper surface of the hole post
Carpolite is brilliant, diamond seed is steadily grown in the hole post, then pass through MPCVD method
Growth of Single Crystal Diamond is carried out, makes steadily give birth in the hole post during diamond seed generation diamond single crystal
It is long.
Wherein, Growth of Single Crystal Diamond is carried out using MPCVD method, step can be passed through
S2011 is realized to step S2014：
Step S2011, liftable newel and deposition table are placed in the reactor chamber；
Step S2012, diamond seed is positioned in the hole post of liftable newel, then reaction chamber is placed in seal shape
State, opens vacuum pump, reaction chamber is evacuated to vacuum state；
Step S2013, hydrogen, control pressure are passed through in the reaction chamber, and are opened microwave and adjusted microwave output power,
After plasma to appear, continue to adjust the chamber pressure of microwave output power and reaction chamber, treat the diamond seed temperature
When being raised to 800 DEG C, the chamber pressure of the microwave power and reaction chamber is no longer adjusted, and diamond seed is performed etching；
Step S2014, after the completion of etching, is passed through methane gas in the chamber of the reaction chamber, carries out diamond single crystal life
It is long.
Step S202, adjusts the liftable newel, make the diamond seed upper surface and deposition table upper surface it
Between vertical range keep within a preset range.
In the present embodiment, since diamond seed is placed on the upper of the hole post of liftable newel, the diamond is set
Vertical range between seed crystal upper surface and deposition table upper surface is adapted to diamond seed to grow, and is grown in diamond seed
During, the vertical range between the diamond seed upper surface and deposition table upper surface need to be kept within a preset range.
Further, the inner wall spacing in diamond seed in hole post and the deposition table hole is placed in first threshold and the
Between two threshold values；In the preset range between the 3rd threshold value and the 4th threshold value.
Specifically, the first threshold is 1.0mm；The second threshold is 1.5mm；3rd threshold value is 0.2mm；Institute
It is 4.5mm to state the 4th threshold value.
In the present embodiment, diamond seed is placed on the upper of the hole post, sets diamond seed upper surface and deposition table
Vertical range between upper surface need to be between 0.2mm-4.5mm, and needs constantly regulate in diamond seed growth course
The height of liftable newel makes the vertical range between diamond seed upper surface and deposition table upper surface be maintained at 0.2mm-
Between 4.5mm, wherein, the inner wall spacing in diamond seed and the deposition table hole is between 1.0mm-1.5mm, the setting of spacing
It can prevent diamond seed from being extended in growth course on the inner wall in deposition table hole, cause the nothing of the liftable newel
Method is adjusted.
Optionally, step S202, can include：, can by described in every the first threshold time in Growth of Single Crystal Diamond
Lift newel to lower, lower distance between the 6th threshold value and the 3rd threshold value.
In the present embodiment, due to diamond single crystal, thickness is continuously increased in experimentation, the upper surface of diamond single crystal
Tapered into the vertical range of deposition table upper surface, in order to ensure that diamond seed upper surface is vertical with deposition table upper surface
Distance will just lower the 6th threshold value of liftable newel and the 3rd threshold in growth course between 0.2mm-4.5mm every 10h
The distance between value.
Further, before the first threshold time lowers the liftable newel, can also include：According to
Growth of Single Crystal Diamond speed adjusts and determines the first threshold time；Wherein, the 6th threshold value is 0.1mm.
In the present embodiment, due to the difference of Growth of Single Crystal Diamond speed, the time of the height of adjusting liftable newel
Also just different, therefore, it is necessary to be adjusted and determine the height of adjusting liftable newel according to Growth of Single Crystal Diamond speed
The time of degree, and lower liftable newel and obtain distance between 0.1mm-0.2mm, to ensure the upper surface of diamond single crystal
It is maintained at the vertical range of deposition table upper surface between 0.2mm-4.5mm.
The present embodiment by the way that diamond seed is positioned in the hole post of liftable newel, wherein, the hole post can be with
For circular columns, it can also be square column, diamond seed is steadily grown in the hole post, then pass through microwave plasma
Body chemical vapor phase growing method carries out Growth of Single Crystal Diamond, can be in institute during making diamond seed generation diamond single crystal
State and steadily grown in hole post, set the vertical range between the diamond seed upper surface and deposition table upper surface to be adapted to Buddha's warrior attendant
Carpolite crystals growth, and during diamond seed is grown, by adjusting the liftable newel, make the diamond
Vertical range between seed crystal upper surface and deposition table upper surface is kept within a preset range, and the deposition table hole is used to suppress gold
Hard rock seed crystal edges overheat, and avoid the generation of diamond multicrystal, while effectively ensureing the growing space of diamond single crystal, lead to
The liftable newel is overregulated, keeps the vertical range between the diamond seed upper surface and deposition table upper surface
Within a preset range, Growth of Single Crystal Diamond quality is effectively improved, it is too thick to have solved the problems, such as a secondary growth not.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although with reference to foregoing reality
Example is applied the present invention is described in detail, it will be understood by those of ordinary skill in the art that：It still can be to foregoing each
Technical solution described in embodiment is modified, or carries out equivalent substitution to which part technical characteristic；And these are changed
Or replace, the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical solution, should all
Within protection scope of the present invention.
Claims (10)
- A kind of 1. Growth of Single Crystal Diamond device, it is characterised in that including：Deposition table and liftable newel；The deposition table is equipped with deposition table hole, and the liftable newel is equipped with the hole post coordinated with the deposition table hole, The hole post is arranged in the deposition table hole.
- 2. Growth of Single Crystal Diamond device according to claim 1, it is characterised in that further include：First transmission mechanism and Motor；First transmission mechanism includes turbine and worm screw, and the turbine is connected with the deposition table, the worm screw with it is described can Lift newel connection；The output shaft of the motor is connected with turbine, for driving the turbine.
- 3. Growth of Single Crystal Diamond device according to claim 1, it is characterised in that further include：Second transmission mechanism and Rotation hand wheel；Second transmission mechanism includes screw and leading screw, and the screw is fixedly connected with the liftable newel, the silk Thick stick is connected by bearing with the screw；The rotation hand wheel is connected with the leading screw, for driving the leading screw.
- 4. Growth of Single Crystal Diamond device according to claim 1, it is characterised in that the deposition table hole coordinates with hole post Gap is between 0.5 mm and 1.0 mm；The material of the deposition table and liftable newel is red copper or stainless steel.
- 5. according to claim 1-4 any one of them Growth of Single Crystal Diamond devices, it is characterised in that the deposition table hole is Either square hole with the hole post that the deposition table hole coordinates is corresponding circular columns or square column to round hole.
- 6. a kind of Growth of Single Crystal Diamond method based on claim 1-5 any one of them Growth of Single Crystal Diamond devices, It is characterised in that it includes：Diamond seed is positioned in the hole post of liftable newel, by using MPCVD method Carry out Growth of Single Crystal Diamond；The liftable newel is adjusted, protects the vertical range between the diamond seed upper surface and deposition table upper surface Hold within a preset range.
- 7. Growth of Single Crystal Diamond method according to claim 6, it is characterised in that the diamond seed being placed in hole post Inner wall spacing with the deposition table hole is between first threshold and second threshold；In the preset range between the 3rd threshold value and the 4th threshold value.
- 8. Growth of Single Crystal Diamond method according to claim 7, it is characterised in that the first threshold is 1.0mm；Institute It is 1.5mm to state second threshold；3rd threshold value is 0.2mm；4th threshold value is 4.5mm.
- 9. Growth of Single Crystal Diamond method according to claim 6, it is characterised in that the liftable newel is adjusted, The vertical range between the diamond seed upper surface and deposition table upper surface is set to keep within a preset range, including：In Growth of Single Crystal Diamond, the liftable newel is lowered every the first threshold time, lowers distance the 6th Between threshold value and the 3rd threshold value.
- 10. Growth of Single Crystal Diamond method according to claim 9, it is characterised in that incited somebody to action every the first threshold time Before the liftable newel is lowered, further include：The first threshold time is adjusted and determines according to Growth of Single Crystal Diamond speed；Wherein, the 6th threshold value is 0.1mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711243374.6A CN107955967A (en) | 2017-11-30 | 2017-11-30 | Growth of Single Crystal Diamond device and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711243374.6A CN107955967A (en) | 2017-11-30 | 2017-11-30 | Growth of Single Crystal Diamond device and method |
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| CN201711243374.6A Pending CN107955967A (en) | 2017-11-30 | 2017-11-30 | Growth of Single Crystal Diamond device and method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109385625A (en) * | 2018-10-12 | 2019-02-26 | 长沙新材料产业研究院有限公司 | A kind of MPCVD equipment temperature regulating device and method |
| CN109402610A (en) * | 2018-10-12 | 2019-03-01 | 长沙新材料产业研究院有限公司 | A kind of MPCVD equipment chip bench temperature regulating device and method |
| CN110938811A (en) * | 2019-12-30 | 2020-03-31 | 广东达蒙得半导体科技有限公司 | Method for rotatably growing diamond in microwave plasma chemical vapor deposition |
| CN113832540A (en) * | 2021-10-09 | 2021-12-24 | 长沙新材料产业研究院有限公司 | Deposition device for diamond growth |
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| CN106048719A (en) * | 2016-07-08 | 2016-10-26 | 武汉大学 | Substrate holder and method for growing monocrystalline diamond |
| CN107227450A (en) * | 2017-07-25 | 2017-10-03 | 无锡远稳烯科技有限公司 | A kind of microwave plasma CVD device and its production method |
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| CN201309963Y (en) * | 2008-10-09 | 2009-09-16 | 成都理工大学 | Water-cooling base bracket device for preparing DC arc-discharge PCVD diamond films |
| CN105525344A (en) * | 2015-12-23 | 2016-04-27 | 中国科学院深圳先进技术研究院 | Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof |
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| CN110938811A (en) * | 2019-12-30 | 2020-03-31 | 广东达蒙得半导体科技有限公司 | Method for rotatably growing diamond in microwave plasma chemical vapor deposition |
| CN113832540A (en) * | 2021-10-09 | 2021-12-24 | 长沙新材料产业研究院有限公司 | Deposition device for diamond growth |
| CN113832540B (en) * | 2021-10-09 | 2023-10-13 | 航天科工(长沙)新材料研究院有限公司 | Deposition device for diamond growth |
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Application publication date: 20180424 |