CN113638047B

CN113638047B - Method for preventing silicon carbide crystal edge dislocation from slipping inwards and crystal thereof

Info

Publication number: CN113638047B
Application number: CN202110947961.3A
Authority: CN
Inventors: 张九阳; 李霞; 王永方; 赵树春; 张红岩; 高超; 王含冠; 王宁; 苏丽娜
Original assignee: Shandong Tianyue Advanced Technology Co Ltd
Current assignee: Shandong Tianyue Advanced Technology Co Ltd
Priority date: 2021-08-18
Filing date: 2021-08-18
Publication date: 2022-04-12
Anticipated expiration: 2041-08-18
Also published as: CN113638047A

Abstract

The application discloses a method for preventing silicon carbide crystal edge dislocation from slipping inwards, which comprises the following steps: step one, constructing a thermal field: placing the crucible in a heat-insulating cover, and then placing the crucible and the heat-insulating cover in a growth cavity of the crystal growth furnace, wherein the heat-insulating cover comprises a heat-insulating cover, the bottom of the heat-insulating cover is provided with a circular groove coaxial with the heat-insulating cylinder, and the diameter of the circular groove is at least less than 1mm of the diameter of the silicon carbide seed crystal and is more than or equal to two thirds of the diameter of the silicon carbide seed crystal; and step two, preparing the silicon carbide crystal by utilizing a thermal field so as to form an annular shape approximately corresponding to the position of the side wall of the circular groove at the edge of the obtained silicon carbide crystal, wherein the width of the annular shape is 100-600 microns. The method for preventing the inward slippage of the edge dislocation of the silicon carbide crystal can obtain the silicon carbide crystal with the annular appearance with certain width at the edge position, the annular appearance can prevent the edge dislocation at the outer side of the appearance from slipping towards the inner side of the annular appearance, and the crystal quality of the middle area of the silicon carbide crystal is improved.

Description

Method for preventing silicon carbide crystal edge dislocation from slipping inwards and crystal thereof

Technical Field

The application belongs to the technical field of silicon carbide crystal materials, and particularly relates to a method for preventing inward slippage of edge dislocation of a silicon carbide crystal and the silicon carbide crystal obtained by the method.

Background

Silicon carbide (SiC) has attracted considerable attention because of its excellent semi-insulating properties, and particularly for high-power semiconductor devices with special requirements, silicon carbide has become a potential material of choice for these devices because of its high temperature, high frequency, high power, and other characteristics.

At present, the SiC crystal is produced by adopting a physical vapor phase method (namely a PVT method) in the industrial production, but because the growth condition of the SiC crystal is higher in requirement, the crystal defect is easy to cause in the growth process, and the improvement and the further application and development of the performance of the SiC crystal are limited by the formation of the crystal defect. For example, edge dislocations formed at the edge of a silicon carbide crystal slip from the edge of the ingot to a position close to the center of the ingot due to shear stress caused by a temperature gradient, and thus the density of central dislocations in the substrate is often high, or local dislocation accumulation interferes with the use of downstream devices.

Therefore, the improvement or elimination of crystal defects is often the main means for improving the quality of the SiC substrate in the prior art. Because the physical vapor Phase (PVT) method for preparing semi-insulating silicon carbide single crystals has been industrialized, the prior art is mostly based on the preparation method, the process is continuously optimized, the quality of seed crystals is improved, the defects are reduced as much as possible, and the crystal quality is continuously improved to obtain the silicon carbide substrate with low defect density, large size and high quality.

Therefore, the prior art has not provided a method for producing defects in a crystal and utilizing the defects to obtain a high quality silicon carbide crystal.

Disclosure of Invention

In order to solve the above problems, the present application provides a method for obtaining a silicon carbide crystal of high central quality by generating defects in the silicon carbide crystal and using the defects to prevent the silicon carbide crystal from inward slipping of edge dislocations. The method comprises the following steps:

step one, constructing a thermal field: placing a crucible which is filled with silicon carbide materials and is covered by a crucible cover and fixed with silicon carbide seed crystals in a heat-insulating cover, and then placing the crucible and the heat-insulating cover in a growth cavity of a crystal growth furnace to obtain the thermal field;

the heat-insulating cover comprises a heat-insulating cylinder and a heat-insulating cover which are matched, the heat-insulating cylinder and the heat-insulating cover surround to form a cavity for placing the crucible,

a circular groove coaxial with the heat-insulating cylinder is formed in the bottom of the heat-insulating cover, and the diameter of the circular groove is at least smaller than 1mm of the diameter of the silicon carbide seed crystal and is more than or equal to two thirds of the diameter of the silicon carbide seed crystal;

and step two, preparing the silicon carbide crystal by using the thermal field so as to form an annular shape approximately corresponding to the position of the groove side wall of the circular groove at the edge of the obtained silicon carbide crystal, wherein the width of the annular shape is 100-600 microns.

Preferably, the upper limit and/or the lower limit of the width value or the width range of the ring-shaped topography may be 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, respectively.

The method provided by the application can be used for growing the silicon carbide crystal by using the PVT method, the crucible filled with the materials and the seed crystals is placed in a heat-insulating cover with a specific structure, and then the crucible and the heat-insulating cover are placed in a growth cavity of a crystal growth furnace together for crystal growth, thereby obtaining the annular appearance which is approximately in the form of a wall at the edge position of the crystal, the ring-shaped morphology is formed by concentrated and aggregated dislocations generated in the crystal growing process, and under the condition that the ring-shaped morphology has the thickness, the slip of the inner side (namely, the position close to the middle part of the crystal) of the edge dislocation positioned at the outer side (namely, the position close to the edge of the crystal) of the ring-shaped morphology can be blocked, and then dislocation in the finally obtained silicon carbide crystal is concentrated at the outer side of the annular appearance, so that the crystal quality of a large area in the middle is remarkably improved, and only the outer part positioned in the annular appearance needs to be removed in subsequent operation.

And the heat-insulating cover with a special structure in the heat-insulating cover can construct a special radial temperature gradient distribution above the crucible, particularly the silicon carbide seed crystal. Specifically, an air layer located above the seed crystal is surrounded on the inner side wall of the circular groove, on one hand, the difference between the heat conductivity of air and the heat conductivity of the heat-insulating cover is large, so that the radial temperature gradient of a temperature field generates sudden change in the temperature gradient from inside to outside at the position of the inner side wall of the circular groove, and then a large temperature difference is formed between the inside and the outside of the position of the inner side wall of the circular groove, so that a large number of surface or penetrating dislocations are intensively generated at the position of the inner side wall of the circular groove where the temperature sudden change occurs on the crystal, and a large number of dislocations are gathered at the position to form the annular shape; on the other hand, the air layer can also play the effect of homogenizing the temperature field, is favorable to adjusting the radial temperature ladder above the seed crystal, and then reduces or even eliminates the production of crystal middle part defect, promotes the quality of middle part crystal. Under the action of the two aspects, the quality of the middle area of the crystal within the position of the inner side wall of the circular groove is improved, and the dislocation at the edge of the crystal is blocked and cannot slide into the middle area of the crystal at the inner side in the presence of the annular morphology, so that the quality of the middle crystal of the silicon carbide crystal is obviously improved, and the silicon carbide crystal with high quality at the middle part can be obtained after the outer part of the annular morphology is removed.

Further, the ring topography includes edge dislocations.

Optionally, the ring-shaped topography comprises ring-shaped structures perpendicular to the {0001} planes formed by edge dislocations.

In the present application, the silicon carbide substrate has first and second opposite major surfaces, the annular feature extends across the silicon carbide substrate from the first major surface toward the second major surface in a direction generally perpendicular to the first major surface, the annular feature extends proximate to an outer periphery of the silicon carbide substrate, e.g., a silicon carbide substrate having an annular feature surrounding a region comprising a central region and an annular region; the ring shape can be observed by using a laser detector, a lattice defect detector, a microscope or a stress meter and the like; the ring-shaped topography includes edge dislocations.

Alternatively, the annular morphology can be a TED annular wall-shaped structure formed by penetrating edge dislocations TED, or can be an annular wall-shaped structure formed by mixing edge dislocations TED and basal plane dislocations BSD.

Further, the diameter of the circular groove is 1-6 mm smaller than the diameter of the silicon carbide seed crystal.

The diameter of the circular groove in the range can form annular appearance at the edge of the crystal, and meanwhile, a larger effective area of the crystal is reserved. Preferably, the diameter of the circular groove is 1.1-5.5 mm smaller than that of the silicon carbide seed crystal, and more preferably 2-5 mm.

Further, the groove depth of the circular groove is at least 10 mm.

Preferably, the groove depth of the circular groove is 10-60 mm.

Wherein the diameter size of the circular groove defines the forming position of the annular shape on the crystal; the dislocation density of the annular appearance can be adjusted according to the temperature difference between the heat-insulating cover and the inner air layer in the temperature field, so that the annular dislocation is further adjusted and controlled, and the annular dislocation has enough density to play a role in blocking a wall. And the groove depth size of the circular recess of injecing in this application for the temperature difference size between heat preservation lid and the air bed is in certain extent, and then makes the annular appearance have suitable width.

Furthermore, the heat-insulating cylinder and the heat-insulating cover are made of graphite.

Preferably, the heat-insulating cylinder and the heat-insulating cover are both made of solid graphite parts with the purity of not less than 99%.

Further, the step of preparing silicon carbide crystals by using the thermal field in the second step includes: the crucible and the heat preservation cover move upwards in the temperature rising stage and move downwards in the pressure reducing stage and the crystal growing stage.

Further, the crucible and the heat preservation cover move upwards at the speed of 0.1mm/h in the temperature rising stage; and/or the presence of a gas in the gas,

the crucible and the heat-preserving cover move downwards at the speed of 1mm/h in the depressurization stage; and/or the presence of a gas in the gas,

the crucible and the heat-preserving cover move downwards at the speed of 0.05mm/h in the crystal growth stage; and/or the presence of a gas in the gas,

the crucible and the heat-insulating cover rotate at the speed of 0.1-0.6 r/min in the process of moving up and/or down.

Further, in the temperature rise stage, the temperature of the crystal growth furnace is 2000-2400K, and the pressure is 0.6 multiplied by 10⁵～3.3×10⁴Pa, the flow rate of inert gas introduced into the crystal growth furnace is 50-500mL/min, and the time of the temperature rise stage is20-30h。

Further, in the pressure reduction stage, the temperature of the crystal growth furnace is 2400-2600K, and the pressure is reduced to 5 multiplied by 10³Pa～1×10⁴Pa, the time of the pressure reduction stage is 5-15 h.

Furthermore, in the crystal growth stage, the temperature of the crystal growth furnace is 2600-2800K, the pressure in the crucible is 100-.

On the other hand, the application also provides a silicon carbide crystal prepared by the method, wherein the dislocation density of the silicon carbide crystal positioned at the inner side of the annular morphology is not higher than 6000 cm^-2。

Preferably, the dislocation density is not higher than 5500 cm^-2More preferably, not more than 5000. cm^-2。

Alternatively, the silicon carbide crystal described herein includes, but is not limited to, silicon carbide in the form of ingots, wafers, substrates, and the like.

Benefits that can be produced by the present application include, but are not limited to:

the method for preventing the inward slippage of the edge dislocation of the silicon carbide crystal can obtain the silicon carbide crystal with the edge position having a certain width annular shape by constructing the specific thermal field structure and matching with the crystal growing process matched with the thermal field structure, the edge dislocation outside the annular shape can be prevented from slipping to the inner side of the annular shape by forming the annular shape under the specific width, and meanwhile, the air layer inside the heat preservation ring is beneficial to homogenizing the temperature field above the middle part of the seed crystal, so that the crystal quality of the middle area of the silicon carbide crystal is further improved. Meanwhile, the method is simple to operate, good in implementation repeatability and stability and suitable for industrial production.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:

FIG. 1 is a schematic structural view of one embodiment of a heat retention cover as may be used herein;

FIG. 2 is a schematic view of the structure of a silicon carbide surface prepared using the heat-retaining cover shown in FIG. 1;

FIG. 3 is a representation of the resulting silicon carbide substrate under a stress detector;

FIG. 4 is an enlarged partial view of a silicon carbide surface after etching defects with molten KOH;

in the figure: 1. a heat preservation cover; 101. an internal thread; 2. a crucible; 3. silicon carbide seed crystals; 4. silicon carbide powder; 5. a heat-preserving cylinder; 501. an external thread; 6. a temperature measuring hole; 7. a circular groove; 701. a circular groove side wall; 702. a circular groove bottom wall; 8. a silicon carbide crystal; 801. a crystalline central region; 802. a crystal edge region; 803. and (4) annular appearance.

Detailed Description

In order to more clearly explain the overall concept of the present application, the following detailed description is given by way of example in conjunction with the accompanying drawings.

So that the manner in which the above recited objects, features and advantages of the present application can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, however, the present application may be practiced in other ways than those described herein, and therefore the scope of the present application is not limited by the specific embodiments disclosed below.

In addition, in the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on those shown in the drawings, are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present application.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.

In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The following examples were all prepared using an insulated cover constructed as shown in figure 1, comprising: a heat preservation cylinder 5 and a heat preservation cover 1 which are arranged in a matching way. The heat-insulating cylinder 5 can be a cylindrical structure, a cavity for holding the crucible is formed in the heat-insulating cylinder, an opening communicated with the cavity is formed in the top of the heat-insulating cylinder, and the crucible 2 can be placed in the inner cavity of the heat-insulating cylinder 5 through the opening during assembly.

As shown in fig. 1, in an assembled state, a crucible 2 is placed in a cavity of a heat preservation cylinder 5, silicon carbide powder 4 is filled in the crucible 2, a silicon carbide seed crystal 3 is fixed on a crucible cover, and the heat preservation cover 1 covers an opening at the top of the heat preservation cylinder 5, so that the cavity forms a relatively closed environment, preferably, the crucible 2 placed in the cavity is a graphite crucible.

In one embodiment, the heat-preserving cylinder 5 and the heat-preserving cover 1 can be assembled in various detachable modes, and the heat-preserving cover 1 can cover the opening of the heat-preserving cylinder 5 and can be fixed without loosening. For example, in the embodiment shown in fig. 1, the top of the side wall of the thermal insulation cylinder 5 is provided with an external thread 501, the bottom of the side wall of the thermal insulation cover 1 is provided with an internal thread 101, and the thermal insulation cover 1 and the thermal insulation cylinder 5 are fixed through the matching threaded assembly of the internal thread 101 and the external thread 501, so that the assembly stability is high. Optionally, the external screw thread 501 of a heat preservation section of thick bamboo 5 extends to the horizontal plane of crucible central point position downwards along the section of thick bamboo wall from the top of a section of thick bamboo lateral wall, so can make the end of external screw thread 501 be located the central point of growth chamber when placing heat preservation device in the growth chamber of growing brilliant stove put, can realize the central point of crucible and the central point of growth chamber put the parallel and level to the position location of crucible in the growth chamber, the long brilliant operation of follow-up long brilliant stove of being convenient for.

Wherein, the material of the heat preservation cylinder 5 and/or the heat preservation cover 1 adopts graphite. Preferably, the heat-insulating cylinder 5 and the heat-insulating cover 1 are both made of high-purity graphite parts with the purity of more than 99.9%, and the graphite has good hardness and heat conduction stability, so that the heat-insulating device is stable in structure, free of damage and good in heat-insulating effect.

Continuing to refer to fig. 1, a circular groove 7 coaxial with the heat-insulating cylinder 5 is formed at the bottom of the heat-insulating cover 1, the diameter of the circular groove 7 is at least less than 1mm of the diameter of the silicon carbide seed crystal 3, and is more than or equal to two thirds of the diameter of the silicon carbide seed crystal 3, and the groove depth of the circular groove 7 can be selected according to requirements.

In a preferred embodiment, the thickness of the cover body between the bottom wall 702 of the circular groove in the heat-preservation cover 1 and the top of the heat-preservation cover 1 is 5-25cm, and the wall thickness of the heat-preservation cylinder 5 is 40-70mm, so as to play a role of sufficiently preserving heat for the crucible 2. In one embodiment, the top of the heat-insulating cover 1 is further provided with a temperature measuring hole 6 for measuring the temperature in the heat-insulating device.

Wherein, the setting of the circular recess 7 of the diameter of heat preservation lid 1 bottom is less than carborundum seed crystal 3 diameter can construct specific radial temperature gradient distribution in carborundum seed crystal 3's top, and is specific, and the inside wall 701 of circular recess 7 has surrounded out the air bed that is located carborundum seed crystal 3 top. On one hand, the thermal conductivity of air and the thermal conductivity of the thermal insulation cover 1 made of graphite materials are greatly different, so that the radial temperature gradient of a thermal field generates sudden change at the position of the inner side wall 701 of the circular groove 7 from inside to outside, and then a large temperature difference is formed between the inner side and the outer side of the position of the inner side wall 701 of the circular groove 7, so that a large number of surface or penetrating dislocations are intensively generated at the position of the inner side wall 701 of the circular groove with the sudden temperature change in the crystal growth process of the silicon carbide crystal, and a large number of dislocations are gathered to form dislocation loops similar to a wall form; on the other hand, the air layer can also play the effect of homogenizing the temperature field, is favorable to adjusting the radial temperature ladder that is located the seed crystal top, and then reduces or even eliminates the production of crystal middle part defect, promotes the quality of middle part crystal. Under the action of the two aspects, the quality of the middle region of the crystal at the inner side of the circular groove 7 is improved, and the dislocation at the edge of the crystal is blocked and cannot slide into the middle region of the crystal at the inner side under the existence of the annular shape, so that the quality of the crystal in the middle region of the silicon carbide crystal is obviously improved, and the silicon carbide crystal with high quality in the middle can be obtained after the outer part of the annular shape is removed.

Wherein the diameter size of the circular groove 7 defines the forming position of the annular shape on the crystal; and the dislocation density of the adjustable annular appearance of the temperature difference size between heat preservation lid 1 self and the inboard air bed in the temperature field to further regulate and control this annular appearance, and the groove depth size of the circular recess of injecing in this application for the temperature difference size between heat preservation lid and the air bed is in certain extent, and then makes the annular appearance have suitable dislocation density.

In a preferred embodiment, the diameter of the circular groove is 1-20mm, more preferably 2-10mm, different from the diameter of the silicon carbide seed crystal, and at the difference of the diameters, a ring-shaped morphology can be formed at the edge position of the silicon carbide crystal, and a larger effective area of the silicon carbide crystal is reserved.

Alternatively, the size of the silicon carbide seed crystal 3 in the crucible 2 may be 2 to 12 inches.

The crystal surface of the silicon carbide crystal 8 prepared by the heat preservation device is shown in fig. 2, as can be seen from fig. 2, the silicon carbide crystal 8 forms an annular shape 803 at a corresponding position of the inner side wall of the circular groove 7, a large number of dislocations are distributed in the area of the silicon carbide crystal edge 802 outside the annular shape 803, and the dislocations at the crystal edge 802 are blocked by the annular shape 803 outside the wall and cannot slide or extend into the wall, while the crystal middle area 801 inside the annular shape 803 obtains high crystal quality under the action of the blocking of the annular shape 803 and the homogenization temperature field of the air layer above, and then the silicon carbide crystal with high quality in the middle can be obtained only by removing the edge part of the silicon carbide crystal.

Specifically, in the embodiment shown in FIG. 1, the diameter of the circular groove 7 is different from that of the silicon carbide seed crystal 3 by 5mm, the wall thickness of the heat-insulating cylinder 5 is 60mm, and the thickness from the bottom wall 702 of the circular groove to the lid body at the top of the heat-insulating lid 1 is 10 cm.

The following examples are all prepared by using the heat-insulating cover provided by the above examples, and the difference is only that the groove depth of the circular groove of the heat-insulating cover 1 adopted by each example is different.

Example 1

The embodiment provides a method for blocking inward slip of edge dislocations of a silicon carbide crystal by blocking the edge dislocations, which comprises the following steps:

step one, a crucible which is loaded with 1kg of silicon carbide powder and is covered by a crucible cover and fixed with 4 inches of silicon carbide seed crystals is placed in the heat-insulating cover, and then the crucible and the heat-insulating cover are placed in a growth cavity of a crystal growth furnace, namely a thermal field with the structure as shown in figure 1 is constructed;

step two, controlling the temperature and pressure of the crystal growth furnace and the flow of inert gas introduced into the crystal growth furnace to clean and remove impurities in the crystal growth furnace, and then carrying out crystal growth by using the crystal growth furnace, wherein the method specifically comprises the following steps:

a temperature rising stage: adjusting the temperature of the crystal growth furnace to 2000-2400K, and controlling the pressure in the crucible to be 0.6 multiplied by 10⁵～3.3×10⁴Pa, introducing inert gas into the crystal growth furnace at a flow rate of 50-500mL/min, moving the crucible and the heat-insulating cover upwards at a moving speed of 0.1mm/h, and rotating at a speed of 0.5 r/min;

a pressure reduction stage: the pressure is controlled from 0.6X 10⁵～3.3×10⁴Pa is reduced to 5X 10³Pa～1×10⁴Pa. During the pressure reduction, the crucible and the heat preservation cover move downwards at the speed of 1mm/h and rotate at the speed of 0.2 r/min; the temperature is controlled to be 2400K-2600K.

Crystal growth stage: the crystal growth temperature is 2600K to 2800K, the crystal growth pressure is 100 Pa to 5000Pa, and the crucible moves downwards at the speed of 0.05mm/h and rotates at the speed of 0.5 r/min. The holding time is 80-120 h.

And (3) a cooling stage: and cooling after crystal growth is finished, and opening the crystal growth furnace to obtain the silicon carbide single crystal ingot with the annular shape.

Examples 2 to 8

Examples 2 to 8 were substantially the same as the preparation method of example 1 except that the insulating cover circular grooves were different in groove depth, that is, the thickness of the air layer located above the silicon carbide seed crystal was different.

Comparative example 1

Comparative example 1 was prepared in substantially the same manner as in example 1 except that the bottom of the insulating cover was flat and was not provided with a circular groove.

The above examples and comparative prepared silicon carbide ingot surfaces were characterized, wherein: the width of the annular topography was measured using a microscopic polarization mode: the dislocation density was measured using an automatic dislocation recognition program and the statistical range inside the wall was the total crystal area from the ring shape to the inside of the crystal and the statistical range outside the wall was the crystal area from the outside of the ring shape to the edge of the crystal. Comparative example 1 did not form a ring-shaped morphology, and thus the dislocation densities of the inner and outer sides were counted at a distance of 5mm from the edge of the crystal. Data for 5 crystals were measured in succession for each example and averaged as the final result. The results obtained are shown in table 1.

TABLE 1

As can be seen from the data in Table 1, when the width of the annular shape is at least 100 μm, the slip of the edge dislocations to the central crystal region can be effectively prevented, and the groove depth of the circular groove is at least 10mm, as compared with the comparative example 1 in which the annular shape is not formed.

Meanwhile, the surface of the silicon carbide prepared by the method provided by the application is shown in fig. 3 and 4. Referring to fig. 3, the arrows indicate the locations where the annular feature is formed. Moreover, as shown in FIG. 4, a large number of dislocations are gathered at the outer side of the ring-shaped morphology, and the density of dislocations at the inner side of the ring-shaped morphology is obviously reduced, which indicates that the silicon carbide crystal capable of preventing the inward slip of the edge dislocations can be obtained by adopting the method provided by the application.

The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A method of blocking the inward slip of edge dislocations of a silicon carbide crystal, the method comprising:

a circular groove coaxial with the heat-insulating cylinder is formed in the bottom of the heat-insulating cover, and the diameter of the circular groove is at least smaller than 1mm of the diameter of the silicon carbide seed crystal and is more than or equal to two thirds of the diameter of the silicon carbide seed crystal; the groove depth of the circular groove is at least 10 mm;

and step two, preparing the silicon carbide crystal by using the thermal field so as to form an annular shape corresponding to the position of the groove side wall of the circular groove at the edge of the obtained silicon carbide crystal, wherein the width of the annular shape is 100-600 microns.

2. The method of claim 1, wherein the ring topography comprises edge dislocations.

3. The method of claim 2, wherein the ring feature comprises a ring structure formed by edge dislocations perpendicular to the {0001} plane.

4. The method of claim 1, wherein the diameter of the circular groove is 1-6 mm smaller than the diameter of the silicon carbide seed crystal.

5. The method of claim 1, wherein the thermal insulating cylinder and the thermal insulating cover are made of graphite.

6. The method according to any one of claims 1 to 5, wherein the step of preparing the silicon carbide crystal by using the thermal field in the second step comprises a temperature rise stage, a pressure drop stage and a crystal growth stage, and the crucible together with the heat-insulating cover moves up in the temperature rise stage and moves down in the pressure drop stage and the crystal growth stage.

7. The method as claimed in claim 6, wherein the crucible together with the heat-retaining cover is moved up at a speed of 0.1mm/h during the temperature-raising stage; and/or the presence of a gas in the gas,

8. The method according to claim 6, wherein in the temperature raising stage, the temperature of the crystal growth furnace is 2000-2400K, and the pressure is 0.6 x 10⁵~3.3×10⁴Pa, introducing inert gas into the crystal growth furnace at a flow rate of 50-500mL/min, and heating for 20-30 h; and/or the presence of a gas in the gas,

in the pressure reduction stage, the temperature of the crystal growth furnace is 2400-2600K, and the pressure is reduced to 5 multiplied by 10³Pa~1×10⁴Pa, the time of the pressure reduction stage is 5-15 h; and/or the presence of a gas in the gas,

in the crystal growth stage, the temperature of the crystal growth furnace is 2600-2800K, the pressure is 100-.

9. The silicon carbide crystal produced according to any one of claims 1-8 wherein the dislocation density within the annular feature is no greater than 6000 cm^-2。