CN105442044A - Crucible independent rotating mechanism of SiC single crystal growth equipment - Google Patents
Crucible independent rotating mechanism of SiC single crystal growth equipment Download PDFInfo
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- CN105442044A CN105442044A CN201510958135.3A CN201510958135A CN105442044A CN 105442044 A CN105442044 A CN 105442044A CN 201510958135 A CN201510958135 A CN 201510958135A CN 105442044 A CN105442044 A CN 105442044A
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- crucible
- rotating mechanism
- insulation layer
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- single crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a crucible independent rotating mechanism of SiC single crystal growth equipment. The crucible independent rotating mechanism is used for solving problems that the morphology and quality of SiC single crystals are nonuniform. The crucible independent rotating mechanism comprises a lower flange plate (9); an outer thermal-insulation support frame (6) is fixedly arranged on the top surface of the lower flange plate (9); a crucible outer thermal-insulation layer (7) is fixedly arranged on the outer thermal-insulation support frame (6); a barrel-shape crucible (11) is movably arranged in the crucible outer thermal-insulation layer (7); an upper thermal-insulation layer (8) is arranged on the top surface of the barrel-shaped crucible (11); a lower thermal-insulation layer (10) is arranged on the bottom surface of the barrel-shaped crucible (11); the bottom surface of the lower thermal-insulation layer (10) is connected with a barrel-shaped crucible support (5); a motor (1) is arranged on the lower flange plate (9); the output shaft of the motor (1) is connected with a driving gear (3); an annular gear rack (4) is arranged on the barrel-shaped crucible support (5); and the driving gear (3) engages with the annular gear rack (4). The crucible independent rotating mechanism is capable of improving thermal field structure symmetry effectively.
Description
Technical field
The present invention relates to crucible independence rotating mechanism in a kind of SiC single crystal growth apparatus, can be used for overcoming the problem that in SiC single crystal process of growth, thermo parameters method is uneven, thus improve SiC single crystal crystal mass, belong to electronic industry and technical field of semiconductor.
Background technology
New electronic technology proposes the requirement of high-density, high speed, reduce power consumption, high-power, wide operating temperature range, radioprotective and high reliability to semiconductor components and devices.SiC single crystal substrate material can meet these requirements preferably, is considered to the excellent substrate material preparing microwave device, Deep trench termination, high voltage electric and electronic device.Manufacturing silicon carbide semiconductor material has become generally acknowledged in the world and has led the power electronics particularly high-power electric and electronic optimized electronic material of next 50 years, has huge application prospect in fields such as power transmission and conversion art, automotive electronics, wind-powered electricity generation, intelligent grid, radar communications.Physical vapor transport (PhysicalVaporTransport-PVT), also referred to as seeded sublimation, is the method that current growing large-size SiC single crystal is the most ripe, utilizes PVT method can obtain the SiC single crystal of diameter 6 inches.The method is the mode by induction heating, makes plumbago crucible be warming up to 2200 DEG C-2400 DEG C, impels SiC powder raw material to distil, and gaseous substance is transferred to the lower SiC seed crystal face of temperature under the effect of thermograde, and on seed crystal formation of deposits monocrystalline
.the growth cycle that the silicon carbide monocrystal growth cycle needs 5-7 days usually, under the hot environment of 2200 DEG C-2400 DEG C, mass loss is there is in lagging material, plumbago crucible in continuous greying, asymmetric simultaneously due to factor geometric positions such as lagging material, heater coil, bushing positions, often cause the thermo parameters method in plumbago crucible uneven, thus causing the SiC single crystal crystalline structure of growth asymmetric, internal stress distribution is uneven simultaneously, affects the quality of SiC single crystal wafer.Especially, along with the increase of silicon carbide monocrystal growth size, in 4-6 inch SiC single crystal process of growth, the growth of high quality single crystal material is stricter for the requirement of warm field distribution homogeneity.
Summary of the invention
The invention provides crucible independence rotating mechanism in a kind of SiC single crystal growth apparatus, solve in physical vapor transport growth SiC single crystal process due to lagging material, plumbago crucible mass loss, the factor geometric positions such as lagging material, heater coil, bushing position are asymmetric, the technical problem that the SiC single crystal pattern caused, quality are uneven.
The present invention solves above technical problem by the following technical programs:
Crucible independence rotating mechanism in a kind of SiC single crystal growth apparatus, comprise lower flange, the end face of lower flange is fixedly installed Surgery therapy bracing frame, Surgery therapy bracing frame is fixedly installed the external thermal insulation of crucible, barrel shape crucible is movably set with in external thermal insulation, thermal insulation layer on the end face of barrel shape crucible is provided with, the bottom surface of barrel shape crucible is provided with lower thermal insulation layer, the bottom surface of lower thermal insulation layer is connected with barrel shape crucible holder, lower flange is provided with motor, the output shaft of motor is connected with driving toothed gear, barrel shape crucible holder is provided with annular rack, driving toothed gear and annular rack mesh together.
The output shaft of motor is provided with magnetic fluid.
Structure of the present invention is simple, with low cost, and by making crucible rotate independent of external thermal insulation, ruhmkorff coil, speed of rotation is adjustable, effectively improves warm field structure symmetry, improves single-crystal silicon carbide symmetry and crystal mass.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Carry out in detail below in conjunction with accompanying drawing to the present invention:
Crucible independence rotating mechanism in a kind of SiC single crystal growth apparatus, comprise lower flange 9, the end face of lower flange 9 is fixedly installed Surgery therapy bracing frame 6, Surgery therapy bracing frame 6 is fixedly installed the external thermal insulation 7 of crucible, barrel shape crucible 11 is movably set with in external thermal insulation 7, thermal insulation layer 8 on the end face of barrel shape crucible 11 is provided with, the bottom surface of barrel shape crucible 11 is provided with lower thermal insulation layer 10, the bottom surface of lower thermal insulation layer 10 is connected with barrel shape crucible holder 5, lower flange 9 is provided with motor 1, the output shaft of motor 1 is connected with driving toothed gear 3, barrel shape crucible holder 5 is provided with annular rack 4, driving toothed gear 3 and annular rack 4 mesh together.
The output shaft of motor 1 is provided with magnetic fluid 2.
Driving toothed gear 3 is fixed on the output shaft of motor 1 by magnetic fluid 2, servomotor drives driving toothed gear 3 to rotate, annular rack 4 can be driven to rotate by driving toothed gear 3, annular rack 4 drives barrel shape crucible holder 5 to rotate, and regulates swing pinion rotating speed to control crucible rotation rate by motor.External thermal insulation, up and down insulation supporting material matter can be the high temperature materials such as graphite, C-C composite, and motor 1 can be servomotor or stepper-motor.
Lower flange 9 is fixed by locking mechanism and is sealed in the growth chamber of SiC, can carry out crystal growth.Purity is adopted to be that the SiC powder of 99.99% is as raw material, 3 inches of 4H-SiC wafers are adopted to be seed crystal, powder and seed crystal are positioned in barrel shape crucible 11, the distance expecting seed crystal is made to be 30 millimeters, growth temperature controls at 2000-2300 DEG C, pour argon gas to 100Pa, crucible rotates with the speed of per minute 10 turns, grows and obtains crystal material block after 50 hours.Visible crystals symmetry has obvious lifting after employing rotating mechanism, adopt opticmicroscope brilliant in crystal edge analysis, the crystal edge quality of crucible rotation technique growth is adopted obviously to be better than the monocrystalline of non rotating growth, material block carried out round as a ball, cutting, carry out analytical test after grinding and polishing, adopt the crystal peak width at half height of rotating technics growth more even.
Claims (2)
1. crucible independence rotating mechanism in a SiC single crystal growth apparatus, comprise lower flange (9), the end face of lower flange (9) is fixedly installed Surgery therapy bracing frame (6), Surgery therapy bracing frame (6) is fixedly installed the external thermal insulation (7) of crucible, barrel shape crucible (11) is movably set with in external thermal insulation (7), the end face of barrel shape crucible (11) is provided with upper thermal insulation layer (8), the bottom surface of barrel shape crucible (11) is provided with lower thermal insulation layer (10), it is characterized in that, the bottom surface of lower thermal insulation layer (10) is connected with barrel shape crucible holder (5), lower flange (9) is provided with motor (1), the output shaft of motor (1) is connected with driving toothed gear (3), barrel shape crucible holder (5) is provided with annular rack (4), driving toothed gear (3) and annular rack (4) mesh together.
2. crucible independence rotating mechanism in a kind of SiC single crystal growth apparatus according to claim 1, is characterized in that, the output shaft of motor (1) is provided with magnetic fluid (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510958135.3A CN105442044A (en) | 2015-12-17 | 2015-12-17 | Crucible independent rotating mechanism of SiC single crystal growth equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510958135.3A CN105442044A (en) | 2015-12-17 | 2015-12-17 | Crucible independent rotating mechanism of SiC single crystal growth equipment |
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| Publication Number | Publication Date |
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| CN105442044A true CN105442044A (en) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510958135.3A Pending CN105442044A (en) | 2015-12-17 | 2015-12-17 | Crucible independent rotating mechanism of SiC single crystal growth equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107523871A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove |
| CN110567269A (en) * | 2019-07-30 | 2019-12-13 | 安徽华铂再生资源科技有限公司 | sample feeding device of high-temperature oxidation furnace |
| CN113564696A (en) * | 2021-07-26 | 2021-10-29 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Device and method for improving radial uniformity of PVT method grown crystal |
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| CN103628141A (en) * | 2013-12-11 | 2014-03-12 | 中国电子科技集团公司第二研究所 | Method for homogenizing crystalline quality of SiC monocrystal |
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| CN104947182A (en) * | 2015-07-16 | 2015-09-30 | 中国电子科技集团公司第四十六研究所 | Method for rapidly growing large-size high-purity semi-insulating silicon carbide single crystal |
| CN105040103A (en) * | 2015-06-25 | 2015-11-11 | 江苏艾科勒科技有限公司 | Growing device for high-quality silicon carbide crystals |
| CN205313716U (en) * | 2015-12-17 | 2016-06-15 | 中国电子科技集团公司第二研究所 | Independent rotary mechanism of crucible in siC growth of single crystal equipment |
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2015
- 2015-12-17 CN CN201510958135.3A patent/CN105442044A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06298594A (en) * | 1993-04-12 | 1994-10-25 | Sumitomo Metal Mining Co Ltd | Apparatus for growing single crystal |
| CN1308690A (en) * | 1998-07-14 | 2001-08-15 | 西门子公司 | Method and device for producing at least one silicon carbide monocrystal |
| CN101812723A (en) * | 2010-04-20 | 2010-08-25 | 中国科学院上海硅酸盐研究所 | Method and device for growing silicon carbide signal crystals based on physical vapor transport technology |
| CN103628141A (en) * | 2013-12-11 | 2014-03-12 | 中国电子科技集团公司第二研究所 | Method for homogenizing crystalline quality of SiC monocrystal |
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| CN104805504A (en) * | 2015-05-19 | 2015-07-29 | 山东大学 | Method for quickly growing large-size SiC (Silicon Carbide) single crystal |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107523871A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove |
| CN110567269A (en) * | 2019-07-30 | 2019-12-13 | 安徽华铂再生资源科技有限公司 | sample feeding device of high-temperature oxidation furnace |
| CN113564696A (en) * | 2021-07-26 | 2021-10-29 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Device and method for improving radial uniformity of PVT method grown crystal |
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Application publication date: 20160330 |