CN107523871A - A kind of single-crystal silicon carbide stove - Google Patents
A kind of single-crystal silicon carbide stove Download PDFInfo
- Publication number
- CN107523871A CN107523871A CN201610453000.6A CN201610453000A CN107523871A CN 107523871 A CN107523871 A CN 107523871A CN 201610453000 A CN201610453000 A CN 201610453000A CN 107523871 A CN107523871 A CN 107523871A
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- CN
- China
- Prior art keywords
- crucible
- reative cell
- path length
- silicon carbide
- electrical path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of single-crystal silicon carbide stove, it includes crucible, crucible cover is provided with above the crucible, rotating mechanism is provided with the crucible bottom, supplies room is provided with the crucible, seed crystal is provided with the crucible cover lower surface, the seed crystal is at least provided with one, heat-insulation layer is provided with outside the crucible, the crucible and crucible cover are all located in reative cell, induction coil is provided with outside the reative cell, the distribution height of the induction coil accounts for the 1/2 7/10 of reative cell height, the interior electrical path length of the crucible accounts for 3/5 4/5 of electrical path length in reative cell, pressure control device and monitoring device are provided with the reative cell.Structure setting of the present invention is reasonable, and control is accurate, and product quality is high.
Description
Technical field
The present invention relates to a kind of crystal production device, and in particular to a kind of carborundum crystals process units.
Background technology
At present, the structure setting of silicon carbide crystal growing device is unreasonable, and operating temperature and pressure are difficult to control, and the endless full axial symmetry of induction coil causes the endless full axial symmetry of crystal growth temperature-field caused by graphite crucible, so as to produce asymmetric crystal growth.
The content of the invention
Goal of the invention：The invention aims to overcome deficiency of the prior art, there is provided a kind of structure setting is reasonable, and control is accurate, the high single-crystal silicon carbide stove of product quality.
Technical scheme：In order to solve the above-mentioned technical problem, a kind of single-crystal silicon carbide stove of the present invention, it includes crucible, crucible cover is provided with above the crucible, rotating mechanism is provided with the crucible bottom, supplies room is provided with the crucible, seed crystal is provided with the crucible cover lower surface, the seed crystal is at least provided with one, heat-insulation layer is provided with outside the crucible, the crucible and crucible cover are all located in reative cell, induction coil is provided with outside the reative cell, the distribution height of the induction coil accounts for the 1/2-7/10 of reative cell height, the interior electrical path length of the crucible accounts for the 3/5-4/5 of electrical path length in reative cell, pressure control device and monitoring device are provided with the reative cell.
The crucible and crucible cover are all made up of graphite.
The distribution height of the induction coil accounts for the 3/5 of reative cell height.
The interior electrical path length of the crucible accounts for 7/10 of electrical path length in reative cell.
Beneficial effect：Compared with prior art, its remarkable advantage is the present invention：Overall structure of the present invention sets reasonable, the heat-insulation layer for accounting for the symmetric induction coils of reative cell height 3/5 using distribution height and being located at outside crucible, make temperature stabilization in reative cell, Crystals in Symmetry grows, the crucible of electrical path length 7/10 in reative cell is accounted for using interior electrical path length, ensure that crystal is in most steady production environment, pressure control device and monitoring device are set, and control is accurately.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Embodiment
The present invention is further illustrated with reference to the accompanying drawings and examples.
As shown in Figure 1, a kind of single-crystal silicon carbide stove of the present invention, it includes crucible 1, crucible cover 2 is provided with above the crucible 1, rotating mechanism 3 is provided with the bottom of crucible 1, supplies room 4 is provided with the crucible 1, seed crystal 5 is provided with the lower surface of crucible cover 2, the seed crystal 5 is at least provided with one, heat-insulation layer 6 is provided with outside the crucible 1, the crucible 1 and crucible cover 2 are all located in reative cell 7, induction coil 8 is provided with outside the reative cell 7, the distribution height of the induction coil 8 accounts for the 3/5 of the height of reative cell 7, the interior electrical path length of the crucible 1 accounts for 7/10 of electrical path length in reative cell 7, pressure control device 9 and monitoring device 10 are provided with the reative cell 7；The crucible 1 and crucible cover 2 are all made up of graphite.Overall structure of the present invention sets reasonable, the heat-insulation layer for accounting for the symmetric induction coils of reative cell height 3/5 using distribution height and being located at outside crucible, make temperature stabilization in reative cell, Crystals in Symmetry grows, the crucible of electrical path length 7/10 in reative cell is accounted for using interior electrical path length, ensure that crystal is in most steady production environment, pressure control device and monitoring device are set, and control is accurately.
The invention provides a kind of thinking and method; method and the approach for implementing the technical scheme are a lot; described above is only the preferred embodiment of the present invention; it should be understood that; for those skilled in the art, under the premise without departing from the principles of the invention, some improvements and modifications can also be made; these improvements and modifications also should be regarded as protection scope of the present invention, and the available prior art of each part being not known in the present embodiment is realized.
Claims (4)
- A kind of 1. single-crystal silicon carbide stove, it is characterised in that：It includes crucible（1）, in the crucible（1）Top is provided with crucible cover（2）, in the crucible（1）Bottom is provided with rotating mechanism（3）, in the crucible（1）It is interior to be provided with supplies room（4）, in the crucible cover（2）Lower surface is provided with seed crystal（5）, the seed crystal（5）At least provided with one, in the crucible（1）Outside is provided with heat-insulation layer（6）, the crucible（1）And crucible cover（2）All it is located at reative cell（7）It is interior, in the reative cell（7）Outside is provided with induction coil（8）, the induction coil（8）Distribution height account for reative cell（7）The 1/2-7/10 of height, the crucible（1）Interior electrical path length account for reative cell（7）The 3/5-4/5 of interior electrical path length, in the reative cell（7）It is provided with pressure control device（9）And monitoring device（10）.
- 2. single-crystal silicon carbide stove according to claim 1, it is characterised in that：The crucible（1）And crucible cover（2）All it is made up of graphite.
- 3. single-crystal silicon carbide stove according to claim 1, it is characterised in that：The induction coil（8）Distribution height account for reative cell（7）The 3/5 of height.
- 4. single-crystal silicon carbide stove according to claim 1, it is characterised in that：The crucible（1）Interior electrical path length account for reative cell（7）The 7/10 of interior electrical path length.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610453000.6A CN107523871A (en) | 2016-06-22 | 2016-06-22 | A kind of single-crystal silicon carbide stove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610453000.6A CN107523871A (en) | 2016-06-22 | 2016-06-22 | A kind of single-crystal silicon carbide stove |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107523871A true CN107523871A (en) | 2017-12-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610453000.6A Pending CN107523871A (en) | 2016-06-22 | 2016-06-22 | A kind of single-crystal silicon carbide stove |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107523871A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105040103A (en) * | 2015-06-25 | 2015-11-11 | 江苏艾科勒科技有限公司 | Growing device for high-quality silicon carbide crystals |
| CN204874827U (en) * | 2015-06-25 | 2015-12-16 | 江苏艾科勒科技有限公司 | High -quality carborundum crystal growing apparatus |
| CN105316765A (en) * | 2014-06-16 | 2016-02-10 | 台聚光电股份有限公司 | Apparatus for producing a plurality of single crystal silicon carbide crystals and method therefor |
| CN105442038A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible rotating-type silicon carbide single crystal growth method |
| CN105442044A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible independent rotating mechanism of SiC single crystal growth equipment |
| CN105568370A (en) * | 2016-03-01 | 2016-05-11 | 山东大学 | Centrally symmetric silicon carbide (SiC) single crystal growing device and method |
| CN205313716U (en) * | 2015-12-17 | 2016-06-15 | 中国电子科技集团公司第二研究所 | Independent rotary mechanism of crucible in siC growth of single crystal equipment |
| CN205856655U (en) * | 2016-06-22 | 2017-01-04 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove |
-
2016
- 2016-06-22 CN CN201610453000.6A patent/CN107523871A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105316765A (en) * | 2014-06-16 | 2016-02-10 | 台聚光电股份有限公司 | Apparatus for producing a plurality of single crystal silicon carbide crystals and method therefor |
| CN105040103A (en) * | 2015-06-25 | 2015-11-11 | 江苏艾科勒科技有限公司 | Growing device for high-quality silicon carbide crystals |
| CN204874827U (en) * | 2015-06-25 | 2015-12-16 | 江苏艾科勒科技有限公司 | High -quality carborundum crystal growing apparatus |
| CN105442038A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible rotating-type silicon carbide single crystal growth method |
| CN105442044A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible independent rotating mechanism of SiC single crystal growth equipment |
| CN205313716U (en) * | 2015-12-17 | 2016-06-15 | 中国电子科技集团公司第二研究所 | Independent rotary mechanism of crucible in siC growth of single crystal equipment |
| CN105568370A (en) * | 2016-03-01 | 2016-05-11 | 山东大学 | Centrally symmetric silicon carbide (SiC) single crystal growing device and method |
| CN205856655U (en) * | 2016-06-22 | 2017-01-04 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171229 |
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| RJ01 | Rejection of invention patent application after publication |