CN105040103A - Growing device for high-quality silicon carbide crystals - Google Patents
Growing device for high-quality silicon carbide crystals Download PDFInfo
- Publication number
- CN105040103A CN105040103A CN201510355710.0A CN201510355710A CN105040103A CN 105040103 A CN105040103 A CN 105040103A CN 201510355710 A CN201510355710 A CN 201510355710A CN 105040103 A CN105040103 A CN 105040103A
- Authority
- CN
- China
- Prior art keywords
- crystal growth
- crystal growing
- rotary
- tray
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a growing device for high-quality silicon carbide single crystals. The growing device comprises a quartz tube, a crystal growth chamber, a rotating tray and an induction coil, wherein the crystal growth chamber and the rotating tray are arranged inside the quartz tube; the rotating tray comprises a horizontal plate and a vertical rod; the vertical rod is connected with the center of the horizontal plate to form a T-shaped structure; the crystal growth chamber is placed on the horizontal plate, and is coaxial with the vertical rod; a vacuum sealing transmission device and a rotating motor are arranged at the outer part of the vertical rod; the crystal growth chamber comprises a crucible cover and a crucible body; the induction coil is arranged at the outer part of the crystal growth chamber, is spirally wound on the outer wall of the quartz tube, and forms a certain inclination angle theta with the outer wall of the quartz tube; the rotating tray drives the crystal growth chamber to rotate at a constant speed around the center shaft, so that the negative effect of the nonaxisymmetry of the induction coil on crystal growth is counteracted, the crystal growth dislocation is reduced, and the growth quality of crystals is improved.
Description
Technical field
The invention belongs to technical field of crystal growth, be specifically related to a kind of high quality carbon SiClx single-crystal growing apparatus of physically based deformation gas phase transportation technology.
Background technology
Manufacturing silicon carbide semiconductor is a kind of compound semiconductor, is also the representative of the third generation wide bandgap semiconductor materials grown up after first-generation elemental semiconductors (silicon) and s-generation compound semiconductor materials (gallium arsenide, gallium phosphide, indium phosphide etc.) of continuing.Compared with front two generation semiconductor materials, silicon carbide has the features such as broad-band gap, high heat conductance, high critical breakdown electric field, high carrier saturation drift velocity and fabulous chemical stability, is therefore suitable for very much high temperature, high-power electronic device field.
The synthetic technology of carborundum crystals has had the history of more than 100 year so far.The physical vaporous deposition (being also the Lely method of subliming method or improvement) generally adopted at present is improved on the basis of Lely method in 1978 by USSR (Union of Soviet Socialist Republics) scientist Tairov and Tsvetkov, seed crystal is adopted to control the configuration of crystal growth, the problem of the Lely method spontaneous nucleation growth solved, can obtain the single-crystal silicon carbide of single configuration.Current physical vaporous deposition has been proved to be can the most effective standard method of growing large-size single-crystal silicon carbide.
Physical vaporous deposition generally adopts Frequency Induction Heating mode, and growing silicon carbice crystals room is made up of plumbago crucible lid and plumbago crucible body.Seed crystal is placed in the effect of crucible cover, powder is placed in the effect of crucible body, but due to the incomplete rotational symmetry of crystal growth temperature-field that the incomplete rotational symmetry of ruhmkorff coil causes plumbago crucible to produce in prior art, thus produce asymmetric crystal growth, cause the basal surface dislocation of lattice and penetrate edge dislocation, finally affect crystal growth quality, the dislocation of the enormous quantity produced in this process of growth and defect, cause the quality of carborundum crystals all the time all lower than other conventional semiconductor material.
Summary of the invention
The object of the invention is to overcome above-mentioned the problems of the prior art, a kind of high quality carbon SiClx single-crystal growing apparatus is provided, the uneven symmetry in effective solution temperature field, on the impact of crystal mass, reduces basal surface dislocation and the generation penetrating edge dislocation in crystal growing process, greatly improves the quality of crystal.
The present invention is achieved by the following technical solutions:
A kind of high quality carbon SiClx single-crystal growing apparatus, comprise silica tube, crystal growing chamber, rotary-tray and ruhmkorff coil, described silica tube inside is provided with crystal growing chamber and rotary-tray, described rotary-tray comprises leveling board and vertical bar, described vertical bar is connected with leveling board center, form a kind of T-shape structure, described crystal growing chamber is placed on the leveling board of rotary-tray, the vertical bar of described crystal growing chamber and rotary-tray is coaxially arranged, described vertical bar outside is provided with vacuum rotary feedthroughs and rotation motor from top to bottom successively, described crystal growing chamber comprises crucible cover and crucible body, described crucible cover and crucible body with the use of, described crystal growth outdoor is provided with ruhmkorff coil, described ruhmkorff coil is spirally wrapped around on silica tube outer wall, described ruhmkorff coil and silica tube outer wall are certain tilt angle theta, described θ is 70 ~ 85 °.
Above-mentioned a kind of high quality carbon SiClx single-crystal growing apparatus, wherein, described crucible cover and crucible body are graphite material.
Beneficial effect of the present invention is:
The xenocryst type of carborundum crystals has more than 200 to plant, conversion of energy between different crystal forms only has about 3 electron-volts, energy difference is very little, warm field faint in actual crystal growing process not rotational symmetry all can have an impact to the stability of crystal formation, and the non-axis symmetry of warm field also can have great impact to the basal surface dislocation in crystal growing process and the generation penetrating edge dislocation simultaneously.
The present invention passes through crystal growing chamber, namely crucible cover and crucible body are placed on on seed crystal and the powder rotary-tray that is axis, in crystal growing process, rotation motor is with the speed of per minute 10 ~ 300 turns, at the uniform velocity rotate by same direction, controlling rotary-tray by vacuum rotary feedthroughs drives crystal growing chamber at the uniform velocity to rotate around central shaft, the growing silicon carbice crystals room that plumbago crucible is formed is in uniform axisymmetric temperature field, effectively solving ruhmkorff coil in prior art causes the uneven symmetry in warm field of crystal growing chamber on the impact of crystal mass, basal surface dislocation and the generation penetrating edge dislocation in effective minimizing crystal growing process, substantially increase the quality of crystal, number of dislocations in crystal can be reduced up to an order of magnitude.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.
A kind of high quality carbon SiClx single-crystal growing apparatus, comprise silica tube 4, crystal growing chamber 8, rotary-tray 3 and ruhmkorff coil 5, described silica tube 4 inside is provided with crystal growing chamber 8 and rotary-tray 3, described rotary-tray 3 comprises leveling board 2 and vertical bar 1, described vertical bar 1 is connected with leveling board 2 center, form a kind of T-shape structure, described crystal growing chamber 8 is placed on the leveling board 2 of rotary-tray 3, described crystal growing chamber 8 is coaxially arranged with the vertical bar 1 of rotary-tray 3, described vertical bar 1 outside is provided with vacuum rotary feedthroughs 13 and rotation motor 12 from top to bottom successively, described crystal growing chamber 8 comprises crucible cover 7 and crucible body 6, described crucible cover 7 and crucible body 6 are graphite material, described crucible cover 7 and crucible body 6 with the use of, described crystal growing chamber 8 outside is provided with ruhmkorff coil 5, described ruhmkorff coil 5 is spirally wrapped around on silica tube 4 outer wall, described ruhmkorff coil 5 is certain tilt angle theta with silica tube 4 outer wall, described θ is 70 ~ 85 °.
Seed crystal 9 with the central shaft 11 of vertical bar 1 for symmetry axis symmetry is placed on crucible cover 7, powder 10 with the central shaft 11 of vertical bar 1 for symmetry axis symmetry is placed in crucible body 6, in crystal growing process, rotation motor 12 is with the speed of per minute 10 ~ 300 turns, at the uniform velocity rotate by same direction, controlling rotary-tray 3 by vacuum rotary feedthroughs 13 drives crystal growing chamber 8 at the uniform velocity to rotate around central shaft 11, effectively solve the uneven symmetry in warm field to the impact of crystal mass, effectively decrease basal surface dislocation and the generation penetrating edge dislocation in crystal growing process, substantially increase the quality of crystal, number of dislocations in crystal can be reduced up to an order of magnitude.
Above are only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses, the change that can expect easily or replacement, all should be encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (2)
1. a high quality carbon SiClx single-crystal growing apparatus, it is characterized by, comprise silica tube, crystal growing chamber, rotary-tray and ruhmkorff coil, described silica tube inside is provided with crystal growing chamber and rotary-tray, described rotary-tray comprises leveling board and vertical bar, described vertical bar is connected with leveling board center, form a kind of T-shape structure, described crystal growing chamber is placed on the leveling board of rotary-tray, the vertical bar of described crystal growing chamber and rotary-tray is coaxially arranged, described vertical bar outside is provided with vacuum rotary feedthroughs and rotation motor from top to bottom successively, described crystal growing chamber comprises crucible cover and crucible body, described crucible cover and crucible body with the use of, described crystal growth outdoor is provided with ruhmkorff coil, described ruhmkorff coil is spirally wrapped around on silica tube outer wall, described ruhmkorff coil and silica tube outer wall are certain tilt angle theta, described θ is 70 ~ 85 °.
2. a kind of high quality carbon SiClx single-crystal growing apparatus as claimed in claim 1, it is characterized by, described crucible cover and crucible body are graphite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510355710.0A CN105040103A (en) | 2015-06-25 | 2015-06-25 | Growing device for high-quality silicon carbide crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510355710.0A CN105040103A (en) | 2015-06-25 | 2015-06-25 | Growing device for high-quality silicon carbide crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105040103A true CN105040103A (en) | 2015-11-11 |
Family
ID=54447066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510355710.0A Pending CN105040103A (en) | 2015-06-25 | 2015-06-25 | Growing device for high-quality silicon carbide crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105040103A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105256371A (en) * | 2015-11-30 | 2016-01-20 | 山东省科学院能源研究所 | Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method |
| CN105442038A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible rotating-type silicon carbide single crystal growth method |
| CN105442044A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible independent rotating mechanism of SiC single crystal growth equipment |
| CN105568370A (en) * | 2016-03-01 | 2016-05-11 | 山东大学 | Centrally symmetric silicon carbide (SiC) single crystal growing device and method |
| CN106906515A (en) * | 2017-04-20 | 2017-06-30 | 山东大学 | A kind of SiC single crystal grower that can realize temperature field real-time adjustment and the method that SiC single crystal is grown using the device |
| CN107142520A (en) * | 2017-05-17 | 2017-09-08 | 中国科学院电工研究所 | One kind control silicon carbide monocrystal growth device |
| CN107523871A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove |
| CN107523872A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of novel silicon carbide single crystal growing furnace |
| CN114411264A (en) * | 2022-01-20 | 2022-04-29 | 南京晶升装备股份有限公司 | Rotatory long brilliant stove induction heating system of carborundum and long brilliant stove |
| CN115198366A (en) * | 2022-09-14 | 2022-10-18 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method of large-size silicon carbide crystals |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000219595A (en) * | 1999-01-28 | 2000-08-08 | Shikusuon:Kk | Crucible, crystal growth device and crystal growth method |
| US20080020212A1 (en) * | 2002-04-04 | 2008-01-24 | Nippon Steel Corporation | Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same |
| CN101255597A (en) * | 2007-12-13 | 2008-09-03 | 西安理工大学 | Crystal growth method performing physical gas-phase transmission by using curved seed crystal |
| DE102009016131A1 (en) * | 2009-04-03 | 2010-10-07 | Sicrystal Ag | Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gaseous phase in crystal growth region of growth crucible, and growing the single crystal by deposition from silicon carbide growth gaseous phase |
| CN102308031A (en) * | 2009-03-06 | 2012-01-04 | 新日本制铁株式会社 | Crucible for producing single-crystal silicon carbide, and production apparatus and production method for producing single-crystal silicon carbide |
| CN102395716A (en) * | 2009-04-16 | 2012-03-28 | 株式会社普利司通 | Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal |
| CN102400224A (en) * | 2010-07-30 | 2012-04-04 | 株式会社电装 | Silicon carbide single crystal and manufacturing method of the same |
| CN103628141A (en) * | 2013-12-11 | 2014-03-12 | 中国电子科技集团公司第二研究所 | Method for homogenizing crystalline quality of SiC monocrystal |
| CN204874827U (en) * | 2015-06-25 | 2015-12-16 | 江苏艾科勒科技有限公司 | High -quality carborundum crystal growing apparatus |
-
2015
- 2015-06-25 CN CN201510355710.0A patent/CN105040103A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000219595A (en) * | 1999-01-28 | 2000-08-08 | Shikusuon:Kk | Crucible, crystal growth device and crystal growth method |
| US20080020212A1 (en) * | 2002-04-04 | 2008-01-24 | Nippon Steel Corporation | Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same |
| CN101255597A (en) * | 2007-12-13 | 2008-09-03 | 西安理工大学 | Crystal growth method performing physical gas-phase transmission by using curved seed crystal |
| CN102308031A (en) * | 2009-03-06 | 2012-01-04 | 新日本制铁株式会社 | Crucible for producing single-crystal silicon carbide, and production apparatus and production method for producing single-crystal silicon carbide |
| DE102009016131A1 (en) * | 2009-04-03 | 2010-10-07 | Sicrystal Ag | Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gaseous phase in crystal growth region of growth crucible, and growing the single crystal by deposition from silicon carbide growth gaseous phase |
| CN102395716A (en) * | 2009-04-16 | 2012-03-28 | 株式会社普利司通 | Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal |
| CN102400224A (en) * | 2010-07-30 | 2012-04-04 | 株式会社电装 | Silicon carbide single crystal and manufacturing method of the same |
| CN103628141A (en) * | 2013-12-11 | 2014-03-12 | 中国电子科技集团公司第二研究所 | Method for homogenizing crystalline quality of SiC monocrystal |
| CN204874827U (en) * | 2015-06-25 | 2015-12-16 | 江苏艾科勒科技有限公司 | High -quality carborundum crystal growing apparatus |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105256371A (en) * | 2015-11-30 | 2016-01-20 | 山东省科学院能源研究所 | Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method |
| CN105442038A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible rotating-type silicon carbide single crystal growth method |
| CN105442044A (en) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | Crucible independent rotating mechanism of SiC single crystal growth equipment |
| CN105568370A (en) * | 2016-03-01 | 2016-05-11 | 山东大学 | Centrally symmetric silicon carbide (SiC) single crystal growing device and method |
| CN107523871A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of single-crystal silicon carbide stove |
| CN107523872A (en) * | 2016-06-22 | 2017-12-29 | 江苏拜尔特光电设备有限公司 | A kind of novel silicon carbide single crystal growing furnace |
| CN106906515A (en) * | 2017-04-20 | 2017-06-30 | 山东大学 | A kind of SiC single crystal grower that can realize temperature field real-time adjustment and the method that SiC single crystal is grown using the device |
| CN107142520A (en) * | 2017-05-17 | 2017-09-08 | 中国科学院电工研究所 | One kind control silicon carbide monocrystal growth device |
| CN114411264A (en) * | 2022-01-20 | 2022-04-29 | 南京晶升装备股份有限公司 | Rotatory long brilliant stove induction heating system of carborundum and long brilliant stove |
| CN114411264B (en) * | 2022-01-20 | 2024-02-20 | 南京晶升装备股份有限公司 | Induction heating system of rotary silicon carbide crystal growth furnace and crystal growth furnace |
| CN115198366A (en) * | 2022-09-14 | 2022-10-18 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method of large-size silicon carbide crystals |
| CN115198366B (en) * | 2022-09-14 | 2022-11-25 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method of large-size silicon carbide crystals |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105040103A (en) | Growing device for high-quality silicon carbide crystals | |
| CN204874827U (en) | High -quality carborundum crystal growing apparatus | |
| CN107002281B (en) | The manufacturing method and monocrystalline silicon carbide substrate of single-crystal silicon carbide | |
| KR101243585B1 (en) | Crucible, apparatus, and method for producing silicon carbide single crystals | |
| CN110129885B (en) | Silicon carbide crystal and preparation method thereof | |
| JP5483216B2 (en) | SiC single crystal and method for producing the same | |
| CN202390579U (en) | Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method | |
| WO2015137439A1 (en) | METHOD FOR PRODUCING MONOCRYSTALLINE SiC | |
| JP2004099340A (en) | Seed crystal for silicon carbide single crystal growth, silicon carbide single crystal ingot and method of manufacturing the same | |
| CN105568385A (en) | Growth method of germanium-doped SiC body single-crystal material | |
| CN206751974U (en) | A kind of device for growing carborundum crystals | |
| CN205313716U (en) | Independent rotary mechanism of crucible in siC growth of single crystal equipment | |
| CN113122924B (en) | Crystal growth assembly, crystal growth apparatus and method | |
| CN204325549U (en) | A kind of silicon carbide crystal growing device | |
| JP5614387B2 (en) | Silicon carbide single crystal manufacturing method and silicon carbide single crystal ingot | |
| Tao | Bulk gallium oxide single crystal growth | |
| CN110079863B (en) | Reactor for crystal growth | |
| JPH10101495A (en) | Production of silicon carbide single crystal | |
| KR20190058963A (en) | Reactor for growing silicon carbide single crystal | |
| Wang et al. | Control of the growth quality by optimizing the crucible structure for growth of large-sized SiC single crystal | |
| JP2018140903A (en) | Method for manufacturing silicon carbide single crystal ingot | |
| CN105442044A (en) | Crucible independent rotating mechanism of SiC single crystal growth equipment | |
| JP3590464B2 (en) | Method for producing 4H type single crystal silicon carbide | |
| JPH05178698A (en) | Apparatus and process for production of silicon carbide bulk single crystal | |
| CN104246024A (en) | Method of growing ingot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151111 |