CN204325549U - A kind of silicon carbide crystal growing device - Google Patents
A kind of silicon carbide crystal growing device Download PDFInfo
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- CN204325549U CN204325549U CN201420832198.5U CN201420832198U CN204325549U CN 204325549 U CN204325549 U CN 204325549U CN 201420832198 U CN201420832198 U CN 201420832198U CN 204325549 U CN204325549 U CN 204325549U
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- seed
- crystal
- seed crystal
- insulated tank
- crucible
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- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 51
- 239000010439 graphite Substances 0.000 claims description 43
- 229910002804 graphite Inorganic materials 0.000 claims description 38
- 238000000034 method Methods 0.000 abstract description 17
- 230000007547 defect Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 238000005336 cracking Methods 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 241000209456 Plumbago Species 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model belongs to new material technology field, be specifically related to a kind of novel silicon carbide crystal growing apparatus and be applicable to solution growth SiC crystal, this device comprises growth chamber, insulated tank is provided with in cavity, insulated tank arranged outside has ruhmkorff coil, is provided with crucible in insulated tank, is provided with seed shaft lift rotating equipment on the upside of growth chamber, this device lower end is provided with the seed shaft stretched in crucible, and seed shaft lower end is connected with seed crystal bracket; Adopt the growing apparatus of this structure in whole process of growth, do not use any tackiness agent to fix seed crystal, only carry seed crystal by seed crystal bracket, seed crystal is in crystal growing process, under the effect of solution flowing, seed crystal is not by the constraint of seed crystal bracket, effectively can avoid like this producing stress in crystal, avoid causing local stress in crystal to cause greatly the situations such as cracking, defect are many when solidifying uneven when using tackiness agent.By using seed crystal bracket, high-quality SiC crystal can be grown.
Description
Technical field
The utility model belongs to novel material processing technique field, is specifically related to a kind of novel silicon carbide crystal growing apparatus.
Background technology
Silicon carbide (SiC) is the third generation half semiconductor material with wide forbidden band after silicon, germanium, gallium arsenide etc., and it has obvious advantage in energy gap, thermal conductivity, critical breakdown strength, saturated electrons drift speed etc.The energy gap of 4H-SiC and 6H-SiC is respectively 3.26eV and 3.08eV, and the forbidden band of 3C-SiC is the narrowest, and its energy gap is also at about 2.39eV.The energy gap of SiC is 2-3 times of Si, and thermal conductivity is 2.6-3.3 times of Si, and critical breakdown strength is 7-13 times of Si, and saturated electrons drift speed is 2-2.7 times of Si.Use wide-band gap material significantly can improve the working temperature of device, adopt the power device of SiC substrate, maximum operating temperature is likely more than 600 DEG C.Higher critical breakdown strength can make the volume of minimizing device, saves a large amount of heat abstractors while therefore can making device miniaturization, reduces the consumption of the energy.Higher saturated electrons drift speed can improve the switching speed of device, reduces switching loss.So compared with Si, SiC is more suitable for for the manufacture of high temperature, high frequency, powerful power device.
Current commercial SiC substrate is obtained by physical vapor transport (PVT) method, and containing a large amount of defects in substrate, especially micropipe defects, what can cause device punctures inefficacy.Along with high-power and the high frequency of power device, the demand of producing high quality SiC substrate is more and more urgent.Solution method is in nearly equilibrium state because of its process of growth, is a kind of Perfected process of SiC crystal of growing high quality, particularly can eliminate the micropipe defects being difficult in PVT method process of growth avoid.In solution growth SiC crystal process, crystal growth occurs in growth chamber, comprises several parts such as open crucible, solution, seed shaft and seed crystal in growth chamber.Crucible is high purity graphite crucible, by induction heating the high purity polycrystalline silicon fusing in crucible, forms the silicon of melting.Carbon source is provided the corrosion of plumbago crucible by the silicon of melting, and then form the solution of Si-C system.By adjusting the relative position of crucible and ruhmkorff coil, make in solution, to form stable temperature and thermograde.Seed crystal is pasted onto on seed rod, and the supersaturation district immersing solution during growth grows.
Seed crystal and seed shaft are pasted together by usual use carbon binder, by sintering process, carbon binder are solidified, form stable connection.But in this process, due to reasons such as the uneven or seed shaft surface irregularities that carbon binder is smeared, there is the space of part in the meeting between seed crystal and seed shaft, due to the difference of the thermal conductivity of air and graphite, seed crystal is different with the temperature in other regions from the gap of seed shaft, and this can cause the generation of crystal defect such as many types of symbiosis in process of growth, or due to the existence of stress, cause defects count in the crystal grown to increase, time serious, even cause the cracking of crystal.Therefore this is the problem that existing solution growth SiC crystal is difficult to avoid.
Summary of the invention
For the weak point that existing solution growth SiC crystal exists, of the present utility modelly inventor provide a kind of novel silicon carbide crystal growing apparatus, this device comprises growth chamber, insulated tank is provided with in cavity, insulated tank arranged outside has ruhmkorff coil, crucible is provided with in insulated tank, seed shaft lift rotating equipment is provided with on the upside of growth chamber, this device lower end is provided with the seed shaft stretched in crucible, seed shaft lower end is connected with seed crystal bracket, adopt the growing apparatus of this structure in whole process of growth, any tackiness agent is not used to fix seed crystal, only carry seed crystal by seed crystal bracket.Seed crystal is in crystal growing process, owing to there is space between seed crystal and seed crystal bracket, under the effect of solution flowing, seed crystal is not by the constraint of seed crystal bracket, effectively can avoid like this producing stress in crystal, avoid causing local stress in crystal to cause greatly the situations such as cracking, defect are many when solidifying uneven when using tackiness agent.By using seed crystal bracket, high-quality SiC crystal can be grown.
Concrete technical scheme of the present utility model is:
A kind of silicon carbide crystal growing device, this device comprises growth chamber, insulated tank is provided with in cavity, insulated tank arranged outside has ruhmkorff coil, crucible is provided with in insulated tank, be provided with seed shaft lift rotating equipment on the upside of growth chamber, this device lower end is provided with the seed shaft stretched in crucible, and seed shaft lower end is connected with seed crystal bracket;
Wherein said insulated tank bottom is connected with insulated tank axle, and insulated tank axle passes growth chamber and is connected with the insulated tank shaft rotating device of growth chamber outside; The bung at described insulated tank top is provided with the through hole allowing seed shaft and seed crystal bracket to pass through;
Described crucible adopts high purity graphite to make, for the solution after storing raw material polysilicon and fusing; Crucible is the container holding solution, again for crystal growth provides carbon source.Form the Si of melting after unmelted polycrystalline silicon, corrosion plumbago crucible, forms SiC.Crucible can also use other materials, as pottery, tantalum (Ta) etc., in this case, graphite raw material need be added to crucible during growth or the gas that passes into containing C (as C
3h
8deng), provide carbon source, so preferably adopt graphite material.
Described seed crystal bracket seed crystal support frame comprises graphite cake and graphite arm, and graphite arm is fixedly connected on below graphite cake, and described graphite cake is by mechanical connection or be fixedly connected with seed shaft by tackiness agent, and graphite cake is square, also can be circular.Graphite arm is L-type structure or square-column-shaped structure.There is opening below graphite arm, be used for holding seed crystal, also can be set to three graphite arms in order to support seed crystal is generally provided with four graphite arms; The height of described opening is greater than the thickness of seed crystal, and general control is 1-4 times of the thickness of seed crystal, is preferably 2 times; Be provided with cavity in described seed shaft, cooling gas can be passed in cavity and seed shaft is cooled.The rotation of crucible and seed shaft can be realized by the insulated tank shaft rotating device that arranges and seed shaft lift rotating equipment, the movement of its vertical direction can also be realized simultaneously.
Adopt the growing apparatus of this structure, seed crystal can be inserted in the opening of graphite arm during use, be fixed on graphite arm, afterwards whole seed crystal bracket is extend into crucible inside, in crucible, put into polysilicon, pass into protection gas after closing growth chamber, utilize ruhmkorff coil to heat plumbago crucible, the temperature of crucible is risen to more than raw material fusing point, forms the silicon of melting; By the corrosion of solution to plumbago crucible, form SiC, control seed shaft lift rotating equipment and make seed crystal bracket fall into solution district to complete SiC crystal growth; Can control crucible and seed shaft during growth according to specific needs to rotate, specifically realize the rotation of crucible by insulated tank shaft rotating device rotary heat-insulating bucket, the rotation of seed shaft is then completed by seed shaft lift rotating equipment.
In sum, adopt the growing apparatus of this structure in whole process of growth, do not use any tackiness agent to fix seed crystal, only carry seed crystal by seed crystal bracket.Seed crystal is in crystal growing process, owing to there is space between seed crystal and seed crystal bracket, under the effect of solution flowing, seed crystal is not by the constraint of seed crystal bracket, effectively can avoid like this producing stress in crystal, avoid causing local stress in crystal to cause greatly the situations such as cracking, defect are many when solidifying uneven when using tackiness agent.By using seed crystal bracket, high-quality SiC crystal can be grown.
Accompanying drawing explanation
Fig. 1 is the structure sectional view of growing apparatus described in the utility model;
Fig. 2 is the front view of seed crystal bracket described in the utility model;
Fig. 3 is the side-view of Fig. 2;
Fig. 4 is the upward view of Fig. 2;
Fig. 5 and Fig. 6 is the other forms of vertical view of seed crystal bracket;
In figure, 1 is insulated tank, and 2 is growth chamber, and 3 is ruhmkorff coil, and 4 is insulated tank axle, and 5 is insulated tank shaft rotating device, 6 is crucible, and 7 is seed crystal, and 8 is seed crystal bracket, and 9 is seed shaft lift rotating equipment, and 10 is cavity, 11 is seed shaft, and 12 is graphite cake, and 13 is graphite arm, and 14 is opening.
Embodiment
A kind of silicon carbide crystal growing device, this device comprises growth chamber 2, insulated tank 1 is provided with in cavity 2, insulated tank 1 arranged outside has ruhmkorff coil 3, crucible 6 is provided with in insulated tank 1, be provided with seed shaft lift rotating equipment 9 on the upside of growth chamber 2, this device lower end is provided with the seed shaft 11 stretched in crucible 6, and seed shaft 11 lower end is connected with seed crystal bracket 8;
Wherein said insulated tank 1 bottom is connected with insulated tank axle 4, and insulated tank axle 4 passes growth chamber 2 and is connected with the insulated tank shaft rotating device 5 of growth chamber outside; The bung at described insulated tank top is provided with the through hole allowing seed shaft and seed crystal bracket to pass through;
Described crucible adopts high purity graphite to make, for the solution after storing raw material polysilicon and fusing; Crucible is the container holding solution, again for crystal growth provides carbon source.Form the Si of melting after unmelted polycrystalline silicon, corrosion plumbago crucible, forms SiC.Crucible can also use other materials, as pottery, tantalum (Ta) etc., in this case, graphite raw material need be added to crucible during growth or the gas that passes into containing C (as C
3h
8deng), provide carbon source, so preferably adopt graphite material.
Described seed crystal bracket 8 seed crystal bracket comprises graphite cake 12 and graphite arm 13, graphite arm 13 is fixedly connected on below graphite cake 12, described graphite cake 12 is by mechanical connection or be fixedly connected with seed shaft 11 by tackiness agent, and graphite cake is square, also can be circular.Graphite arm is L-type structure or square-column-shaped structure.There is opening 14 below graphite arm 13, be used for holding seed crystal, also can be set to three graphite arms (as Fig. 4,5 and 6 shownschematically structure) in order to support seed crystal is generally provided with four graphite arms; The height of described opening 14 is greater than the thickness of seed crystal 7; Be provided with cavity 10 in described seed shaft 11, cooling gas can be passed in cavity and seed shaft is cooled.
Claims (4)
1. a silicon carbide crystal growing device, this device comprises growth chamber (2), it is characterized in that: in cavity (2), be provided with insulated tank (1), insulated tank (1) arranged outside has ruhmkorff coil (3), crucible (6) is provided with in insulated tank (1), growth chamber (2) upside is provided with seed shaft lift rotating equipment (9), this device lower end is provided with the seed shaft (11) stretched in crucible (6), and seed shaft (11) lower end is connected with seed crystal bracket (8);
Wherein said insulated tank (1) bottom is connected with insulated tank axle (4), and insulated tank axle (4) passes growth chamber (2) and is connected with the insulated tank shaft rotating device (5) of growth chamber outside; The bung at described insulated tank top is provided with the through hole allowing seed shaft and seed crystal bracket to pass through;
Described seed crystal bracket (8) seed crystal bracket comprises graphite cake (12) and graphite arm (13), graphite arm (13) is fixedly connected on graphite cake (12) below, described graphite cake (12) is by mechanical connection or be fixedly connected with seed shaft (11) by tackiness agent, and there is opening (14) graphite arm (13) below.
2. growing apparatus according to claim 1, is characterized in that: described graphite cake (12) is square or circular; Described graphite arm (13) is L-type structure or square-column-shaped structure.
3. growing apparatus according to claim 1, is characterized in that: the height of described opening (14) is greater than the thickness of seed crystal (7).
4. device according to claim 1, is characterized in that: be provided with cavity (10) in described seed shaft (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420832198.5U CN204325549U (en) | 2014-12-24 | 2014-12-24 | A kind of silicon carbide crystal growing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420832198.5U CN204325549U (en) | 2014-12-24 | 2014-12-24 | A kind of silicon carbide crystal growing device |
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| Publication Number | Publication Date |
|---|---|
| CN204325549U true CN204325549U (en) | 2015-05-13 |
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| CN201420832198.5U Active CN204325549U (en) | 2014-12-24 | 2014-12-24 | A kind of silicon carbide crystal growing device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105970294A (en) * | 2016-06-23 | 2016-09-28 | 山东天岳晶体材料有限公司 | Liquid-phase growing silicon carbide seed crystal shaft device |
| CN109183142A (en) * | 2018-11-14 | 2019-01-11 | 中国工程物理研究院激光聚变研究中心 | A kind of seed crystal support and preparation method thereof |
| CN112048769A (en) * | 2020-07-24 | 2020-12-08 | 山东天岳先进材料科技有限公司 | Device for healing silicon carbide crystal micropipe and application |
| WO2023143298A1 (en) * | 2022-01-27 | 2023-08-03 | 北京青禾晶元半导体科技有限责任公司 | Device for manufacturing silicon carbide crystal and method for manufacturing silicon carbide crystal |
-
2014
- 2014-12-24 CN CN201420832198.5U patent/CN204325549U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105970294A (en) * | 2016-06-23 | 2016-09-28 | 山东天岳晶体材料有限公司 | Liquid-phase growing silicon carbide seed crystal shaft device |
| CN105970294B (en) * | 2016-06-23 | 2018-10-19 | 山东天岳晶体材料有限公司 | A kind of liquid growth silicon carbide seed shaft device |
| CN109183142A (en) * | 2018-11-14 | 2019-01-11 | 中国工程物理研究院激光聚变研究中心 | A kind of seed crystal support and preparation method thereof |
| CN112048769A (en) * | 2020-07-24 | 2020-12-08 | 山东天岳先进材料科技有限公司 | Device for healing silicon carbide crystal micropipe and application |
| CN112048769B (en) * | 2020-07-24 | 2021-08-31 | 山东天岳先进科技股份有限公司 | Device for healing silicon carbide crystal micropipe and application |
| WO2023143298A1 (en) * | 2022-01-27 | 2023-08-03 | 北京青禾晶元半导体科技有限责任公司 | Device for manufacturing silicon carbide crystal and method for manufacturing silicon carbide crystal |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Silicon carbide crystal growth apparatus Effective date of registration: 20160729 Granted publication date: 20150513 Pledgee: China Co truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2016990000657 |
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Date of cancellation: 20170615 Granted publication date: 20150513 Pledgee: China Co truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2016990000657 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Silicon carbide crystal growth apparatus Effective date of registration: 20170616 Granted publication date: 20150513 Pledgee: China Co truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2017370000066 |
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Date of cancellation: 20190626 Granted publication date: 20150513 Pledgee: China Co truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2017370000066 |
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Denomination of utility model: Silicon carbide crystal growth apparatus Effective date of registration: 20190627 Granted publication date: 20150513 Pledgee: China Co truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2019370000145 |
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Date of cancellation: 20191216 Granted publication date: 20150513 Pledgee: China Co truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2019370000145 |
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Effective date of registration: 20191227 Address after: No. 99, South Tianyue Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: The middle road in Huaiyin District of Ji'nan city of Shandong Province, No. 1929 250118 Patentee before: Shandong Tianyue Crystal Material Co., Ltd. |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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