CN204325549U - 一种碳化硅晶体生长装置 - Google Patents
一种碳化硅晶体生长装置 Download PDFInfo
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- CN204325549U CN204325549U CN201420832198.5U CN201420832198U CN204325549U CN 204325549 U CN204325549 U CN 204325549U CN 201420832198 U CN201420832198 U CN 201420832198U CN 204325549 U CN204325549 U CN 204325549U
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- seed
- crystal
- seed crystal
- insulated tank
- crucible
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- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 51
- 239000010439 graphite Substances 0.000 claims description 43
- 229910002804 graphite Inorganic materials 0.000 claims description 38
- 238000000034 method Methods 0.000 abstract description 17
- 230000007547 defect Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 238000005336 cracking Methods 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 241000209456 Plumbago Species 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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CN201420832198.5U CN204325549U (zh) | 2014-12-24 | 2014-12-24 | 一种碳化硅晶体生长装置 |
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CN201420832198.5U CN204325549U (zh) | 2014-12-24 | 2014-12-24 | 一种碳化硅晶体生长装置 |
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CN204325549U true CN204325549U (zh) | 2015-05-13 |
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CN201420832198.5U Active CN204325549U (zh) | 2014-12-24 | 2014-12-24 | 一种碳化硅晶体生长装置 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105970294A (zh) * | 2016-06-23 | 2016-09-28 | 山东天岳晶体材料有限公司 | 一种液相生长碳化硅籽晶轴装置 |
CN109183142A (zh) * | 2018-11-14 | 2019-01-11 | 中国工程物理研究院激光聚变研究中心 | 一种籽晶托及其制备方法 |
CN112048769A (zh) * | 2020-07-24 | 2020-12-08 | 山东天岳先进材料科技有限公司 | 一种碳化硅晶体微管愈合用装置及应用 |
WO2023143298A1 (zh) * | 2022-01-27 | 2023-08-03 | 北京青禾晶元半导体科技有限责任公司 | 制造碳化硅晶体的装置及制造碳化硅晶体的方法 |
-
2014
- 2014-12-24 CN CN201420832198.5U patent/CN204325549U/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105970294A (zh) * | 2016-06-23 | 2016-09-28 | 山东天岳晶体材料有限公司 | 一种液相生长碳化硅籽晶轴装置 |
CN105970294B (zh) * | 2016-06-23 | 2018-10-19 | 山东天岳晶体材料有限公司 | 一种液相生长碳化硅籽晶轴装置 |
CN109183142A (zh) * | 2018-11-14 | 2019-01-11 | 中国工程物理研究院激光聚变研究中心 | 一种籽晶托及其制备方法 |
CN112048769A (zh) * | 2020-07-24 | 2020-12-08 | 山东天岳先进材料科技有限公司 | 一种碳化硅晶体微管愈合用装置及应用 |
CN112048769B (zh) * | 2020-07-24 | 2021-08-31 | 山东天岳先进科技股份有限公司 | 一种碳化硅晶体微管愈合用装置及应用 |
WO2023143298A1 (zh) * | 2022-01-27 | 2023-08-03 | 北京青禾晶元半导体科技有限责任公司 | 制造碳化硅晶体的装置及制造碳化硅晶体的方法 |
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Denomination of utility model: Silicon carbide crystal growth apparatus Effective date of registration: 20190627 Granted publication date: 20150513 Pledgee: China Co truction Bank Corp Ji'nan hi tech sub branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2019370000145 |
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