CN202187086U - Gradient heater for monocrystal furnace - Google Patents
Gradient heater for monocrystal furnace Download PDFInfo
- Publication number
- CN202187086U CN202187086U CN2011202648542U CN201120264854U CN202187086U CN 202187086 U CN202187086 U CN 202187086U CN 2011202648542 U CN2011202648542 U CN 2011202648542U CN 201120264854 U CN201120264854 U CN 201120264854U CN 202187086 U CN202187086 U CN 202187086U
- Authority
- CN
- China
- Prior art keywords
- graphite heating
- copper bar
- graphite
- heating cylinder
- heating tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses a gradient heater for a monocrystal furnace. The gradient heater comprises a graphite heating cylinder, wherein an anode copper bar and an cathode copper bar are respectively connected to the inner wall of the graphite heating cylinder; graphite columns are mounted in the anode and the cathode copper bars; vertical slots are formed on the graphite heating cylinder in a staggered manner; and ends of the vertical slots start from the end part of the graphite heating cylinder, and the other ends of those do not exceed the end part of the graphite heating cylinder. The gradient heater provided by the utility model has reasonable structural design, reduced heat loss, gradually-increased temperature from top to bottom, prolonged service life, and lowered manufacturing cost.
Description
Technical field
The utility model relates to and utilizes polycrystalline to lift out the silicon single crystal field, specifically belongs to the gradient heater of single crystal growing furnace.
Background technology
At present, czochralski crystal growing furnace is a most important product line in the crystal growth equipment, makes artificial lens with it, and crystalline growth velocity is the highest, realizes MC the most easily, has therefore also obtained to use the most widely.In order to grow large size and high-quality monocrystalline, human all advanced means of almost having used.Integrated material, machinery, electric, computingmachine, the many-sided high-end knowledge and technology of magnetic on single crystal growing furnace.Silicon single crystal generally is used to make unicircuit and other electronic components as a kind of semiconductor material.Most semiconductor silicon single crystal body adopts the vertical pulling method manufacturing.
The utility model content
The purpose of the utility model provides a kind of gradient heater of single crystal growing furnace, and reasonable in design has reduced calorific loss, and temperature raises from top to bottom gradually, and prolong work-ing life, and production cost reduces.
The technical scheme of the utility model is following:
The gradient heater of single crystal growing furnace; Include the graphite heating tube; Graphite heating tube inwall is connected with anodal copper bar, negative pole copper bar respectively, is set with the graphite post in anodal copper bar, the negative pole copper bar, has the vertical groove that staggers each other on the said graphite heating tube; Vertical groove one end originates in the end of graphite heating tube, and the other end is no more than the end of graphite heating tube.
Be provided with sealing-ring between described graphite column outer wall and anodal copper bar, the negative pole copper bar.
The utility model adopts the labyrinth type design, and reasonable in design has reduced calorific loss, and temperature raises from top to bottom gradually, and prolong work-ing life, and production cost reduces.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
Referring to accompanying drawing, the gradient heater of single crystal growing furnace includes graphite heating tube 1; Graphite heating tube 1 inwall is connected with anodal copper bar 2, negative pole copper bar 3 respectively; Be set with graphite post 4 in anodal copper bar, the negative pole copper bar, have the vertical groove 5 that staggers each other on the graphite heating tube, vertical groove one end originates in the end of graphite heating tube; The other end is no more than the end of graphite heating tube, is provided with sealing-ring 6 between graphite post 4 outer walls and anodal copper bar, the negative pole copper bar.
Claims (2)
1. the gradient heater of single crystal growing furnace; Include the graphite heating tube; It is characterized in that: graphite heating tube inwall is connected with anodal copper bar, negative pole copper bar respectively, is set with the graphite post in anodal copper bar, the negative pole copper bar, has the vertical groove that staggers each other on the said graphite heating tube; Vertical groove one end originates in the end of graphite heating tube, and the other end is no more than the end of graphite heating tube.
2. the gradient heater of single crystal growing furnace according to claim 1 is characterized in that: be provided with sealing-ring between described graphite column outer wall and anodal copper bar, the negative pole copper bar.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011202648542U CN202187086U (en) | 2011-07-25 | 2011-07-25 | Gradient heater for monocrystal furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011202648542U CN202187086U (en) | 2011-07-25 | 2011-07-25 | Gradient heater for monocrystal furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202187086U true CN202187086U (en) | 2012-04-11 |
Family
ID=45918547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011202648542U Expired - Fee Related CN202187086U (en) | 2011-07-25 | 2011-07-25 | Gradient heater for monocrystal furnace |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202187086U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102758245A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Deoxidizing type single crystal furnace |
CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
CN103726105A (en) * | 2013-10-11 | 2014-04-16 | 中国科学院上海光学精密机械研究所 | Growing apparatus and method for Ti sapphire crystal |
-
2011
- 2011-07-25 CN CN2011202648542U patent/CN202187086U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102758245A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Deoxidizing type single crystal furnace |
CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
CN103726105A (en) * | 2013-10-11 | 2014-04-16 | 中国科学院上海光学精密机械研究所 | Growing apparatus and method for Ti sapphire crystal |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102732947B (en) | Ingot thermal field for growing pure quasi-monocrystalline | |
CN202187086U (en) | Gradient heater for monocrystal furnace | |
CN202482487U (en) | Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method | |
CN202265623U (en) | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon | |
CN205329210U (en) | Polysilicon ingoting furnace | |
CN202390560U (en) | Large-capacity polysilicon ingot furnace thermal field structure | |
CN103590109B (en) | Czochralski crystal growing furnace magnetic field device and use the crystal pulling method of this magnetic field device | |
CN203295656U (en) | Heater for pulling of crystals | |
CN202187083U (en) | Bracket support for crucible of single crystal furnace | |
CN201560248U (en) | Graphite crucible for single crystal furnace | |
CN207130360U (en) | A kind of heater | |
CN202898592U (en) | Guide cylinder for single crystal furnaces | |
CN102560625A (en) | Device and method for prolonging edge minority carrier lifetime of N-type silicon single crystal | |
CN206486622U (en) | A kind of device that G7 polycrystal silicon ingots are cast for GT polycrystalline furnaces | |
CN203159742U (en) | Efficient crucible for casting polycrystal ingot | |
CN202717880U (en) | Novel polysilicon ingot casting furnace thermal field structure | |
CN201864791U (en) | Graphite guiding cylinder of 800 type silicon single crystal furnace | |
CN201933196U (en) | Graphite crucible for single crystal furnace | |
CN203613301U (en) | Draft tube for drawing major-diameter N-shaped single crystal | |
CN203144555U (en) | Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace | |
CN203128691U (en) | Silicon core master batch of polycrystalline silicon | |
CN203653755U (en) | Crucible for polycrystalline silicon ingot based on quartz particle embedded layer | |
CN202401160U (en) | Czochralski crystal growing furnace | |
CN104018222B (en) | A kind of for the preparation of the crucible of polycrystal silicon ingot and the growth method of polycrystal silicon ingot | |
CN201990762U (en) | Heating device of czochralski single crystal furnace |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120411 Termination date: 20140725 |
|
EXPY | Termination of patent right or utility model |