CN202187087U - Crucible heating device of single crystal furnace - Google Patents
Crucible heating device of single crystal furnace Download PDFInfo
- Publication number
- CN202187087U CN202187087U CN2011202648754U CN201120264875U CN202187087U CN 202187087 U CN202187087 U CN 202187087U CN 2011202648754 U CN2011202648754 U CN 2011202648754U CN 201120264875 U CN201120264875 U CN 201120264875U CN 202187087 U CN202187087 U CN 202187087U
- Authority
- CN
- China
- Prior art keywords
- crucible
- pot
- single crystal
- heating device
- pot support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a crucible heating device of a single crystal furnace, comprising a graphite crucible, wherein a pot support is bracketed below the graphite crucible; the pot support is composed of four pot support bodies pieced together; a bearing frame is arranged below the pot support in an overhead way; bar-shaped crucible pads are arranged in the gaps between the pot bodies. The crucible heating device has a rational structure design. The utility model reduces heat loss, and has good temperature uniformity. The temperature rising speed is quick, and the heating efficiency is obviously raised, and the production cost is lowered.
Description
Technical field
The utility model relates to and utilizes polycrystalline to lift out the silicon single crystal field, specifically belongs to the crucible heating unit of single crystal growing furnace.
Background technology
At present, czochralski crystal growing furnace is a most important product line in the crystal growth equipment, makes artificial lens with it, and crystalline growth velocity is the highest, realizes MC the most easily, has therefore also obtained to use the most widely.In order to grow large size and high-quality monocrystalline, human all advanced means of almost having used.Integrated material, machinery, electric, computingmachine, the many-sided high-end knowledge and technology of magnetic on single crystal growing furnace.Silicon single crystal generally is used to make unicircuit and other electronic components as a kind of semiconductor material.Most semiconductor silicon single crystal body adopts the vertical pulling method manufacturing.
The utility model content
The purpose of the utility model provides a kind of crucible heating unit of single crystal growing furnace, and reasonable in design has reduced calorific loss, and temperature homogeneity is good, and temperature rising speed is fast, and heating efficiency obviously improves, and production cost reduces.
The technical scheme of the utility model is following:
The crucible heating unit of single crystal growing furnace includes plumbago crucible, and the rest pot holder of said plumbago crucible below, described pot holder are that the pot base body by four mutual amalgamations constitutes, and a pot holder below overhead has support bracket, and the slit of each pot base body is placed with the crucible base block of bar shaped.
The top of described support bracket is provided with Support tray, and the upper surface of Support tray has the concave surface that matches with pot base body bottom.
The reasonable in design of the utility model has reduced calorific loss, and temperature homogeneity is good, and temperature rising speed is fast, and heating efficiency obviously improves, and production cost reduces.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
Referring to accompanying drawing, the crucible heating unit of single crystal growing furnace includes plumbago crucible 1; Plumbago crucible 1 below rest pot holder 2; Pot holder 2 is that the pot base body 3 by four mutual amalgamations constitutes, and a pot holder below overhead has support bracket 4, and the slit of each pot base body 3 is placed with the crucible base block 5 of bar shaped; The top of support bracket is provided with Support tray 6, and the upper surface of Support tray 6 has the concave surface that matches with pot base body bottom.
Claims (2)
1. the crucible heating unit of single crystal growing furnace; Include plumbago crucible, it is characterized in that: the rest pot holder of said plumbago crucible below, described pot holder are that the pot base body by four mutual amalgamations constitutes; Pot holder below overhead has support bracket, and the slit of each pot base body is placed with the crucible base block of bar shaped.
2. the crucible heating unit of single crystal growing furnace according to claim 1, it is characterized in that: the top of described support bracket is provided with Support tray, the concave surface that the upper surface of Support tray has and match in pot base body bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202648754U CN202187087U (en) | 2011-07-25 | 2011-07-25 | Crucible heating device of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202648754U CN202187087U (en) | 2011-07-25 | 2011-07-25 | Crucible heating device of single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202187087U true CN202187087U (en) | 2012-04-11 |
Family
ID=45918548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202648754U Expired - Fee Related CN202187087U (en) | 2011-07-25 | 2011-07-25 | Crucible heating device of single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202187087U (en) |
-
2011
- 2011-07-25 CN CN2011202648754U patent/CN202187087U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120411 Termination date: 20140725 |
|
| EXPY | Termination of patent right or utility model |