CN203559152U - Straight-pulling mono-crystal furnace - Google Patents
Straight-pulling mono-crystal furnace Download PDFInfo
- Publication number
- CN203559152U CN203559152U CN201320553829.5U CN201320553829U CN203559152U CN 203559152 U CN203559152 U CN 203559152U CN 201320553829 U CN201320553829 U CN 201320553829U CN 203559152 U CN203559152 U CN 203559152U
- Authority
- CN
- China
- Prior art keywords
- pallet
- crystal growing
- czochralski crystal
- growing furnace
- field device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a straight-pulling mono-crystal furnace which comprises a shell and a thermal field device arranged in the shell, wherein the shell comprises a bottom plate and a furnace side wall; the thermal field device is positioned above a furnace base plate; a protection base plate is arranged between the thermal field device and the furnace base plate; an isolation frame is arranged between the furnace base plate and the protection base plate. According to the straight-pulling mono-crystal furnace, the problem of high heat energy loss caused by direct contact between the thermal field device and the furnace base plate in the prior art is solved; the energy consumption is greatly reduced; on the premise that the quality and the pulling speed of mono-crystal are not affected, the isometric power can be reduced by 3-5KW.
Description
Technical field
The utility model belongs to monocrystalline producing apparatus technical field, relates to a kind of czochralski crystal growing furnace.
Background technology
Photovoltaic generation is a kind of as the main energy sources of green energy resource and human kind sustainable development, is day by day subject to the attention of countries in the world and is greatly developed.Monocrystalline silicon piece, as the base mateiral of photovoltaic generation, has the market requirement widely.Common monocrystalline silicon growing method is a vertical pulling method, that is, and and in single crystal growing furnace, polycrystalline silicon material is put in quartz crucible, and heat fused, then makes seed crystal contact with molten silicon, when rotating seed crystal and crucible, lift seed crystal, can growing single-crystal silicon rod in seed crystal lower end.In single crystal growth process, up to 1400 ℃ of left and right, there is the huge temperature difference with stove external environment in the temperature in thermal field of single crystal furnace, causes thus a large amount of thermal lossess.Especially the place contacting with furnace shell at thermal field component, water coolant can be taken away a large amount of heats.
Utility model content
The purpose of this utility model is to provide a kind of czochralski crystal growing furnace, solves the large problem of thermal losses that prior art exists.
The technical solution of the utility model is that czochralski crystal growing furnace, comprises housing and be arranged on the thermal-field device in housing, housing comprises drop-bottom and furnace sidewall, thermal-field device is positioned at drop-bottom top, is provided with river bottom protection plate between thermal-field device and drop-bottom, between drop-bottom and river bottom protection plate, is provided with isolating frame.
Feature of the present utility model is also:
Isolating frame comprises pallet and supporting structure, gapped between pallet and furnace sidewall.
Between isolating frame and river bottom protection plate, be provided with insulation quilt.
Supporting structure comprises the support ring of the coaxial setting of at least one and pallet, and support ring is enclosed and formed by the back up pad perpendicular to pallet.
Isolating frame also comprises a plurality of positioning elements, and a plurality of positioning elements distribute with respect to the center equal angles of pallet, and all protrudes from the outer rim of pallet, and the radical length of part that a plurality of positioning elements protrude from the outer rim of pallet equates.
A plurality of positioning elements all contact with furnace sidewall.
Pallet is provided with the perforate that is positioned at center, and supporting structure comprises two support rings, and one of them support ring is near the edge of perforate, and another support ring is near the outer rim of pallet.
Another kind of structure is:
Supporting structure comprises a plurality of supporters.
A plurality of supporters distribute with respect to the center equal angles of pallet, and all protrude from the outer rim of pallet, and the radical length of part that a plurality of supporters protrude from the outer rim of pallet equates.
A plurality of supporters all contact with furnace sidewall.
The utlity model has following beneficial effect:
1, between the drop-bottom of the utility model czochralski crystal growing furnace and river bottom protection plate, isolating frame is set, isolating frame only contacts with drop-bottom by supporting structure, solve thermal-field device and drop-bottom in existing thermal-field device and directly contacted the large problem of heat energy loss causing, significantly reduced the loss of heat energy.
2, the utility model is simple in structure, and result of use is good.Use the utility model czochralski crystal growing furnace, can not affect under the prerequisite of monocrystalline quality and pulling rate, reach isometrical power and reduce by 3～5KW.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment 1 czochralski crystal growing furnace;
Fig. 2 is the isolating frame structural representation of the utility model embodiment 1 czochralski crystal growing furnace;
Fig. 3 is the czochralski crystal growing furnace structural representation of the utility model embodiment 2;
Fig. 4 is the isolating frame structural representation of the utility model embodiment 2 czochralski crystal growing furnaces.
In figure, 10. czochralski crystal growing furnace, 11. housings, 12 thermal-field devices, 13. isolating frames, 14. insulation quilts, 110. drop-bottoms, 111. furnace sidewall, 112. openings, 120. crucibles, 121. well heaters, 122. insulation constructions, 123. river bottom protection plates, 124. crucible shaft, 130. pallets, 131. supporting structures, 132. positioning elements, 232. supporters, 133. perforates, 134. surfaces, 135. bottom surfaces, 136. support rings.
Embodiment
Below in conjunction with drawings and Examples, the utility model is elaborated.
Embodiment 1, sees figures.1.and.2, and czochralski crystal growing furnace 10, comprises housing 11, thermal-field device 12 and isolating frame 13.Thermal-field device 12 and isolating frame 13 are all positioned at housing 11.
Thermal-field device 12 is positioned at drop-bottom 110 tops.Thermal-field device 12 comprises crucible 120, well heater 121, insulation construction 122 and river bottom protection plate 123.Crucible 120 is for holding polycrystalline silicon material.Crucible 120 belows are provided with and are connected in the crucible shaft 124 of driving mechanism (not shown) to drive crucible 120 to rotate.Crucible shaft 124 is through the opening 112 of drop-bottom 110.Well heater 121 arranges around the periphery of crucible 120.Insulation construction 122 is positioned at the periphery of well heater 121, and relative with furnace sidewall 111.River bottom protection plate 123 is positioned at crucible 120 and well heater 121 belows, and near drop-bottom 110.
Isolating frame 13 is between drop-bottom 110 and river bottom protection plate 123.Preferably, between isolating frame 13 and river bottom protection plate 123, insulation quilt 14 is set.That is to say, on drop-bottom 110, be followed successively by isolating frame 13, insulation quilt 14 and river bottom protection plate 123.
Isolating frame 13 comprises a pallet 130, supporting structure 131 and a plurality of positioning elements 132.Supporting structure 131 is all connected in pallet 130 with a plurality of positioning elements 132.
Positioning element 132 can be connected in bottom surface 135 or the outer edge surface of pallet 130.A plurality of positioning elements 132 all protrude from the outer rim of pallet 130, and all contact with furnace sidewall 111.A plurality of positioning elements 132 distribute with respect to pallet 130 center equal angles, and the radical length of part that protrudes from the outer rim of pallet 130 equates.In the present embodiment, the quantity of positioning element 132 is three, and the angle that adjacent two positioning elements are 132 is 120 degree.Each positioning element 132 is all along the radially setting of pallet 130, and a plurality of positioning elements 132 protrude from the equal in length of pallet 130 outer rims.Certainly, the quantity of positioning element 132 also can be two, four or more.Positioning element 132 also can be along other direction setting being different from radially, and the setting party of a plurality of positioning elements 132 is to can be identical or different, and the radial component of length that only needs a plurality of positioning elements 132 to protrude from the part of pallet 130 outer rims equates.
The czochralski crystal growing furnace 10 that the utility model embodiment 1 provides arranges isolating frame 13 between drop-bottom 110 and thermal-field device 12, avoids drop-bottom 110 and thermal-field device 12 directly to contact and takes away a large amount of heat energy.Further, the supporting structure 131 of isolating frame 13 has reduced the contact area of isolating frame 13 with drop-bottom 110, gapped between pallet 130 and furnace sidewall 111, all can further reduce thermal losses.In addition, a plurality of positioning elements 132 structures of isolating frame 13, can realize in the housing 11 that rapidly isolating frame 13 is coaxially installed on to czochralski crystal growing furnace 10, avoid tilting to install causing the unsettled phenomenon of thermal-field device 12.
Embodiment 2, and the czochralski crystal growing furnace 10 of the present embodiment is roughly the same with embodiment's 1, and difference is that the structure of isolating frame 13 is different.With reference to Fig. 3 and Fig. 4, isolating frame 13 comprises pallet 130 and is connected in pallet 130 near the supporting structure 131 of a side of drop-bottom 110.Supporting structure 131 comprises a plurality of supporters 232.A plurality of supporters 232 all protrude from the outer rim of pallet, and all contact with furnace sidewall 111.A plurality of supporters 232 distribute with respect to pallet 130 center equal angles, and the radical length of part that protrudes from the outer rim of pallet 130 equates.In the present embodiment, the quantity of supporter 232 is six, and each supporter 232 is all along the radially setting of pallet 130.A plurality of supporters 232 on the one hand can support tray 130, on the other hand, can realize in the housing 11 that rapidly isolating frame 13 is coaxially installed on to czochralski crystal growing furnace 10, avoids tilting to install causing the unsettled phenomenon of thermal-field device 12.
In the czochralski crystal growing furnace 10 that embodiment 2 provides, supporting structure 131 has the effect of supporting with positioned coaxially concurrently, and structure is simpler.
The czochralski crystal growing furnace that the utility model provides has solved thermal-field device and drop-bottom in existing thermal-field device and has directly contacted the large problem of heat energy loss causing.Use this czochralski crystal growing furnace, can not affect under the prerequisite of monocrystalline quality and pulling rate, reach isometrical power and reduce by 3～5KW.
Claims (9)
1. czochralski crystal growing furnace, comprise housing (11) and be arranged on the thermal-field device (12) in described housing (11), described housing (11) comprises drop-bottom (110) and furnace sidewall (111), described thermal-field device (12) is positioned at drop-bottom (110) top, between thermal-field device (12) and drop-bottom (110), be provided with river bottom protection plate (123), it is characterized in that: between described drop-bottom (110) and described river bottom protection plate (123), be provided with isolating frame (13); Described isolating frame (13) comprises pallet (130) and supporting structure (131), gapped between described pallet (130) and described furnace sidewall (111).
2. czochralski crystal growing furnace according to claim 1, is characterized in that: between described isolating frame (13) and described river bottom protection plate (123), be provided with insulation quilt (14).
3. czochralski crystal growing furnace according to claim 1, it is characterized in that: described supporting structure (131) comprises at least one and the support ring (136) of the coaxial setting of described pallet (130), and described support ring (136) is enclosed and formed by the back up pad perpendicular to described pallet (130).
4. czochralski crystal growing furnace according to claim 3, it is characterized in that: described isolating frame (13) also comprises a plurality of positioning elements (132), described a plurality of positioning element (132) distributes with respect to the center equal angles of described pallet (130), and all protrude from the outer rim of described pallet (130), the radical length of part that described a plurality of positioning elements (132) protrude from the outer rim of described pallet (130) equates.
5. czochralski crystal growing furnace according to claim 4, is characterized in that: described a plurality of positioning elements (132) all contact with described furnace sidewall (111).
6. czochralski crystal growing furnace according to claim 3, it is characterized in that: described pallet (130) is provided with the perforate that is positioned at center, described supporting structure (131) comprises two support rings (136), one of them support ring (136) is near the edge of described perforate, and another support ring (136) is near the outer rim of described pallet (130).
7. czochralski crystal growing furnace according to claim 1, is characterized in that: described supporting structure (131) comprises a plurality of supporters (232).
8. czochralski crystal growing furnace according to claim 7, it is characterized in that: described a plurality of supporters (232) distribute with respect to the center equal angles of described pallet (130), and all protrude from the outer rim of described pallet (130), the radical length of part that described a plurality of supporters (232) protrude from the outer rim of described pallet (130) equates.
9. czochralski crystal growing furnace according to claim 8, is characterized in that: described a plurality of supporters (232) all contact with described furnace sidewall (111).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320553829.5U CN203559152U (en) | 2013-09-06 | 2013-09-06 | Straight-pulling mono-crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320553829.5U CN203559152U (en) | 2013-09-06 | 2013-09-06 | Straight-pulling mono-crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203559152U true CN203559152U (en) | 2014-04-23 |
Family
ID=50508883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320553829.5U Expired - Fee Related CN203559152U (en) | 2013-09-06 | 2013-09-06 | Straight-pulling mono-crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203559152U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110541201A (en) * | 2019-09-09 | 2019-12-06 | 西安奕斯伟硅片技术有限公司 | Guide piece and crucible installation guide device |
-
2013
- 2013-09-06 CN CN201320553829.5U patent/CN203559152U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110541201A (en) * | 2019-09-09 | 2019-12-06 | 西安奕斯伟硅片技术有限公司 | Guide piece and crucible installation guide device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102560623B (en) | Preparation method of large-size sapphire single crystal | |
| CN204825129U (en) | Thermal field structure of high -efficient polycrystalline silicon ingot furnace | |
| CN204570091U (en) | There is the single crystal growing furnace mending warm guide shell | |
| WO2020224186A1 (en) | Ingot furnace for directional solidification growth of crystalline silicon and application | |
| CN206157273U (en) | Novel single crystal growing furnace | |
| CN103451726A (en) | Water chilling ingot furnace and ingot casting process thereof | |
| CN206624946U (en) | A kind of pressure furnace for being used to prepare indium phosphide single crystal | |
| CN203559152U (en) | Straight-pulling mono-crystal furnace | |
| CN208183109U (en) | A kind of manufacturing equipment of octagon polycrystalline silicon ingot casting | |
| CN201245726Y (en) | Crucible support for supporting crucible lower part for polycrystalline silicon production field and preventing leakage flow | |
| CN205313716U (en) | Independent rotary mechanism of crucible in siC growth of single crystal equipment | |
| CN111926380A (en) | Heat shield device for single crystal production furnace, control method and single crystal production furnace | |
| CN202626346U (en) | Novel mono-like crystal ingot furnace | |
| CN203923449U (en) | A kind of low-energy consumption single-crystal stove | |
| CN201276609Y (en) | Single crystal growth heating device | |
| CN201605350U (en) | Thermal field device used for reducing crystal drawing power of single crystal furnace | |
| CN205635846U (en) | Single crystal growing furnace crucible tray | |
| CN204265882U (en) | A kind of crystal growing apparatus | |
| CN204281893U (en) | A kind of directional solidification thermal-preservation thermal field | |
| CN209468525U (en) | Polycrystalline silicon ingot casting thermal field structure, polycrystalline silicon ingot or purifying furnace and polycrystal silicon ingot | |
| CN202658262U (en) | Heating coil for drawing five-inch zone-melting single crystal silicon | |
| CN202658263U (en) | Heating coil for controlling 6-inch zone-melting monocrystalline silicon | |
| CN203320182U (en) | Thermal field structure of polycrystalline silicon ingot furnace | |
| CN204959078U (en) | Sapphire single crystal furnace thermal -insulation structure | |
| CN217351608U (en) | Heat-preserving container of reduction consumption is with solid felt in end and heat-preserving container |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 750021 Yinchuan, the Ningxia Hui Autonomous Region (national level) economic and Technological Development Zone Kaiyuan Road, No. 15 Co-patentee after: LONGI GREEN ENERGY TECHNOLOGY Co.,Ltd. Patentee after: YINCHUAN LONGI SILICON MATERIALS Co.,Ltd. Co-patentee after: NINGXIA LONGI SILICON MATERIALS Co.,Ltd. Co-patentee after: WUXI LONGI SILICON MATERIALS Corp. Address before: 750021 Yinchuan, the Ningxia Hui Autonomous Region (national level) economic and Technological Development Zone Kaiyuan Road, No. 15 Co-patentee before: XI'AN LONGI SILICON MATERIALS Corp. Patentee before: YINCHUAN LONGI SILICON MATERIALS Co.,Ltd. Co-patentee before: NINGXIA LONGI SILICON MATERIALS Co.,Ltd. Co-patentee before: WUXI LONGI SILICON MATERIALS Corp. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140423 Termination date: 20210906 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |