CN203320182U - Thermal field structure of polycrystalline silicon ingot furnace - Google Patents
Thermal field structure of polycrystalline silicon ingot furnace Download PDFInfo
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- CN203320182U CN203320182U CN2013203012355U CN201320301235U CN203320182U CN 203320182 U CN203320182 U CN 203320182U CN 2013203012355 U CN2013203012355 U CN 2013203012355U CN 201320301235 U CN201320301235 U CN 201320301235U CN 203320182 U CN203320182 U CN 203320182U
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- insulation cage
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- polycrystalline silicon
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Abstract
The utility model relates to a thermal field structure of a polycrystalline silicon ingot furnace. The thermal field structure comprises a thermal insulation cage, a heat exchange platform arranged in the thermal insulation cage, a crucible arranged on the heat exchange platform, graphite guard plates arranged on the periphery of the crucible and a graphite cover plate which leans against the top parts of the graphite guard plates, wherein the surfaces, which are opposite to the thermal insulation cage, of the graphite guard plates and the graphite cover plate are of concave-convex structures, and the inner wall of the thermal insulation cage is provided with a smooth surface; the concave-convex structures can change the mode of reflecting infrared emanation at high temperature into diffuse reflection, the surface of the diffuse reflection can increase heating and absorption, the smooth surface has the good reflecting action on the infrared emanation, the loss of heat in the furnace is reduced, the thermal insulation cage of the thermal insulation cage is improved, the energy consumption in a silicon ingot production process is reduced, and meanwhile, the stability of a thermal field in the furnace is also improved.
Description
Technical field
The utility model relates to polycrystalline silicon ingot or purifying furnace design and fabrication technology field, is specifically related to a kind of thermal field structure of polycrystalline silicon casting furnace.
Background technology
Common polycrystalline silicon ingot or purifying furnace, generally comprise body of heater, for the heat exchange platform of placing crucible, for the top heater to crucible heating and sidepiece well heater, is placed in crucible and well heater outside for controlling the heat-insulation cage of temperature required of growing crystal.
The graphite backplate and the graphite cover plate that in polycrystalline silicon ingot or purifying furnace, use at present are planar design, in the ingot casting process, the thermal field that top heater and sidepiece well heater produce is plane reflection through graphite backplate and graphite cover plate reflex time, is unfavorable for the stability of thermal field in polycrystalline silicon ingot or purifying furnace.
The utility model content
Based on this, be necessary to provide a kind of stable thermal field structure of polycrystalline silicon casting furnace of thermal field in polycrystalline silicon ingot or purifying furnace that is beneficial to.
A kind of thermal field structure of polycrystalline silicon casting furnace, comprise heat-insulation cage, be placed in heat exchange platform in described heat-insulation cage, be placed on crucible on described heat exchange platform, be arranged on the graphite backplate of crucible surrounding and bear against the graphite cover plate at described graphite backplate top, the surface that described graphite backplate is relative with described heat-insulation cage with described graphite cover plate is concaveconvex structure, and the inwall of described heat-insulation cage is set as smooth surface.
In embodiment, described graphite cover plate is bolted on described graphite backplate top therein.
Therein in embodiment, described heat-insulation cage comprises heat insulation top board, heat insulation bottom board and middle side heat-insulation cage, wherein said graphite backplate and described side heat-insulation cage are oppositely arranged, the surface that described graphite backplate is relative with the side heat-insulation cage is concaveconvex structure, the inwall correspondence of described side heat-insulation cage is set as smooth surface, wherein said graphite cover plate and described heat insulation top board are oppositely arranged, the surface that described graphite cover plate is relative with heat insulation top board is concaveconvex structure, and the internal surface correspondence of described heat insulation top board is set as smooth surface.
In embodiment, be provided with the graphite paper with smooth surface on the inwall of described heat-insulation cage therein.
In embodiment, described graphite paper is pasted or is bolted to by graphite on the inwall of described heat-insulation cage therein.
In embodiment, described concaveconvex structure is in wave shape therein.
Above-mentioned thermal field structure of polycrystalline silicon casting furnace, the graphite backplate is concaveconvex structure with the graphite cover plate surface relative with heat-insulation cage, the inwall of heat-insulation cage is made as smooth surface, it is diffuse-reflectance that concaveconvex structure can make the thermal-radiating mode of reflective infrared under high temperature, diffuse reflection surface can increase thermal absorption, and smooth surface has good reflex action to infrared emanation, has reduced the loss of furnace heat, improve the insulated capacity of heat-insulation cage, and then reduced the energy consumption in the silicon ingot production process; Also can improve the stability of thermal field in stove simultaneously.
The accompanying drawing explanation
The structural representation of the polycrystalline silicon ingot or purifying furnace that Fig. 1 is an embodiment.
Embodiment
Be below embodiment of the present utility model, it is further described the technical solution of the utility model, but the utility model is not limited to these embodiments.
The polycrystalline silicon ingot or purifying furnace 100 of ginseng shown in Fig. 1, comprise body of heater 110, be placed in heat-insulation cage 120 in body of heater 110, be placed in heat-insulation cage 120 heat exchange platform 130 that is used for placing crucible 200, the graphite pillar 140 of supporting hot board 130, to the gas-filled valve 150 of crucible 200 interior inflations, well heater 160, the graphite backplate 170 that is arranged at crucible 200 surroundings, the graphite cover plate 180 that bears against graphite backplate 170 tops that crucible 200 are heated from crucible 200 tops and sidepiece and liftably be connected in the lifting connecting rod 190 in body of heater 110.
Heat-insulation cage 120 comprises the heat insulation top board 122 that is fixed in crucible 200 tops, be positioned at the heat insulation bottom board 124 of crucible 200 belows and be located in the side heat-insulation cage 126 of crucible 200 surroundings.Heat insulation top board 122, heat insulation bottom board 124 form closed cavities together with side heat-insulation cage 126.Side heat-insulation cage 126 is suspended to and promotes on connecting rod 190, in order to separate with heat insulation bottom board 124 by promoting connecting rod 190 control side heat-insulation cages 126 in the long brilliant stage.
As shown in Figure 1, the surface that graphite backplate 170 is relative with side heat-insulation cage 126 inwalls has concaveconvex structure, and the inwall of side heat-insulation cage 126 is set as smooth surface; Meanwhile, the surface that graphite cover plate 180 is relative with heat insulation top board 122 also has concaveconvex structure, and the internal surface of heat insulation top board 122 also is set as smooth surface.In an embodiment, the concaveconvex structure on graphite backplate 170 and graphite cover plate 180 is in wave shape.
The smooth surface that heat-insulation cage 120 inwalls arrange, have good reflex action to infrared emanation, reduced the loss of furnace heat, improved the insulated capacity of heat-insulation cage 120, and then reduce the energy consumption in the silicon ingot production process.The surface of the heat that graphite backplate 170 reflection well heaters 160 produce is male and fomale(M&F), and making the thermal-radiating mode of reflective infrared under high temperature is diffuse-reflectance, and diffuse reflection surface can increase the thermal absorption energy efficient, better to maintaining in stove the thermal field stabilizing effect.Concaveconvex structure on graphite cover plate 180 can more absorb the heat that top heater 162 produces, and avoids the top thermal field on the direct impact in crucible, also avoids the top thermal field on the silicon ingot impact in long brilliant stage.
In the present embodiment, the smooth surface of side heat-insulation cage 126 inwalls and heat insulation top board 122 inwalls can obtain in the following manner: directly side heat-insulation cage 126 inwalls and the 122 inwall settings of heat insulation top board are to smooth plane; Or the graphite paper with smooth surface is set on side heat-insulation cage 126 inwalls and heat insulation top board 122 internal surfaces.Graphite paper can stick on the internal surface of side heat-insulation cage 126 inwalls and heat insulation top board 122 by chemical binder, also can be bolted on the internal surface of side heat-insulation cage 126 inwalls and heat insulation top board 122 by graphite.
The above embodiment has only expressed several embodiment of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be as the criterion with claims.
Claims (6)
1. a thermal field structure of polycrystalline silicon casting furnace, comprise heat-insulation cage, be placed in heat exchange platform in described heat-insulation cage, be placed on crucible on described heat exchange platform, be arranged on the graphite backplate of crucible surrounding and bear against the graphite cover plate at described graphite backplate top, it is characterized in that: the surface that described graphite backplate is relative with described heat-insulation cage with described graphite cover plate is concaveconvex structure, and the inwall of described heat-insulation cage is set as smooth surface.
2. thermal field structure of polycrystalline silicon casting furnace according to claim 1, is characterized in that, described graphite cover plate is bolted on described graphite backplate top.
3. thermal field structure of polycrystalline silicon casting furnace according to claim 1, it is characterized in that, described heat-insulation cage comprises heat insulation top board, heat insulation bottom board and middle side heat-insulation cage, wherein said graphite backplate and described side heat-insulation cage are oppositely arranged, the surface that described graphite backplate is relative with the side heat-insulation cage is concaveconvex structure, the inwall correspondence of described side heat-insulation cage is set as smooth surface, wherein said graphite cover plate and described heat insulation top board are oppositely arranged, the surface that described graphite cover plate is relative with heat insulation top board is concaveconvex structure, and the internal surface correspondence of described heat insulation top board is set as smooth surface.
4. thermal field structure of polycrystalline silicon casting furnace according to claim 1, is characterized in that, is provided with the graphite paper with smooth surface on the inwall of described heat-insulation cage.
5. thermal field structure of polycrystalline silicon casting furnace according to claim 4, is characterized in that, described graphite paper is pasted or is bolted to by graphite on the inwall of described heat-insulation cage.
6. thermal field structure of polycrystalline silicon casting furnace according to claim 1, is characterized in that, described concaveconvex structure is in wave shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203012355U CN203320182U (en) | 2013-05-28 | 2013-05-28 | Thermal field structure of polycrystalline silicon ingot furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203012355U CN203320182U (en) | 2013-05-28 | 2013-05-28 | Thermal field structure of polycrystalline silicon ingot furnace |
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| CN203320182U true CN203320182U (en) | 2013-12-04 |
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| CN2013203012355U Expired - Lifetime CN203320182U (en) | 2013-05-28 | 2013-05-28 | Thermal field structure of polycrystalline silicon ingot furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106012007A (en) * | 2016-07-22 | 2016-10-12 | 常州天合光能有限公司 | Method and device for growing crystalline silicone by aid of forced convection |
-
2013
- 2013-05-28 CN CN2013203012355U patent/CN203320182U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106012007A (en) * | 2016-07-22 | 2016-10-12 | 常州天合光能有限公司 | Method and device for growing crystalline silicone by aid of forced convection |
| CN106012007B (en) * | 2016-07-22 | 2018-03-13 | 天合光能股份有限公司 | A kind of method and its device of forced convertion growth crystalline silicon |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20131204 |
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| CX01 | Expiry of patent term |