CN103741205B - Full monocrystalline silicon cast ingot stove - Google Patents
Full monocrystalline silicon cast ingot stove Download PDFInfo
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- CN103741205B CN103741205B CN201410040583.0A CN201410040583A CN103741205B CN 103741205 B CN103741205 B CN 103741205B CN 201410040583 A CN201410040583 A CN 201410040583A CN 103741205 B CN103741205 B CN 103741205B
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- heating element
- crucible
- heat exchange
- exchange platform
- heat
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 238000009413 insulation Methods 0.000 claims abstract description 31
- 239000010453 quartz Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000037237 body shape Effects 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000002210 silicon-based material Substances 0.000 abstract description 6
- 238000005266 casting Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 206010020843 Hyperthermia Diseases 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000036031 hyperthermia Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
The present invention relates to a kind of full monocrystalline silicon cast ingot stove, comprise body of heater, heat-insulation cage, upper heating element, lower heating element, side heating element, upper crucible cover plate, side crucible guard boards, quartz crucible, upper heat exchange platform, lower heat exchange platform, lifting column, aqueous cold plate; Described heat-insulation cage is box body shape, is fixed in body of heater, and heat-insulation cage inside is fixed with heating element, side heating element; Be provided with lower heat exchange platform in the middle part of heat-insulation cage to be fixedly connected with lower heating element, lifting column, upper heat exchange platform is movable, and it places quartz crucible, side crucible guard boards 4, side crucible guard boards, upper crucible cover plate; Heat-insulation cage bottom outside is provided with aqueous cold plate.The present invention is rational in infrastructure, avoids the weak point in prior art, makes the horizontal thermal field gradient of whole thermal field little, the melted silicon material time is short, improves monocrystalline rate, shortens process cycle, improve the production efficiency of equipment, can energy efficient, reduction ingot casting production cost.
Description
Technical field
The invention belongs to solar cell silicon ingot production unit technical field, particularly the full monocrystalline silicon cast ingot stove of one.
Background technology
Silicon single crystal draws in thermal field, and the quality of thermal field has a significant impact silicon single crystal quality.In monocrystalline silicon growing process, good thermal field, can produce high-quality monocrystalline.Bad thermal field easily makes monocrystalline become polycrystalline, can not draw monocrystalline even at all.Although some thermal field energy growing single-crystals, second-rate, there are dislocation and other textural defect.Therefore, finding good thermal field condition, configure best thermal field, is very important technology.
The monocrystalline silicon cast ingot stove that present home or overseas uses has the following disadvantages: 1, five the formula heating of U.S. GT ingot furnace adopt upper heater and four side heater, without lower well heater, in accurate monocrystalline ingot casting process, the horizontal temperature of thermal field gradient of melted silicon material time long, whole thermal field is large, cause side seed crystal fusing too much, be unfavorable for the growth of accurate monocrystalline.2, German ALD ingot furnace adopts upper and lower well heater, and without four side heater, in accurate monocrystalline ingot casting process, side temperature of thermal field does not catch up with, and is unfavorable for accurate single crystal growing.3, the structured anhydrous cold dish had, the direction of uncontrollable single crystal growing, can produce a large amount of polycrystalline, and the monocrystalline rate of such silicon ingot is lower.4, the water of constitution cold dish had is inner at heat-insulation cage, has two shortcoming: A: aqueous cold plate can not be cut off the water supply after blow-on, and such crucible bottom temperature is just low, the silicon material on young brilliant top can be made likely not melt, and produce polycrystalline, even if fusing, then energy consumption is too high; B: aqueous cold plate namely in high-temperature zone, always by hyperthermia radiation, once cut off the water supply or leak, inconceivable consequence will occur in heat-insulation cage inside.
Summary of the invention
The object of the invention is to overcome above deficiency, provide one full monocrystalline silicon cast ingot stove, keep rational thermograde to meet heat-insulation cage inside in monocrystalline silicon production, thus ensure the total quality of silicon single crystal ingot, the production efficiency of raising equipment.
For achieving the above object, the present invention adopts following scheme:
A kind of full monocrystalline silicon cast ingot stove, comprises body of heater, heat-insulation cage, upper heating element, lower heating element, side heating element, upper crucible cover plate, side crucible guard boards, quartz crucible, heat exchange platform, lifting column, aqueous cold plate.The top of described heat-insulation cage inside is fixed with heating element, the surrounding of heat-insulation cage inside is fixed with side heating element, heat exchange platform is provided with in the middle part of heat-insulation cage, on heat exchange platform, plane is equipped with quartz crucible, the surrounding of quartz crucible is provided with side crucible guard boards, the top of side crucible guard boards is provided with crucible cover plate, is provided with lower heating element bottom heat exchange platform.
Described heat-insulation cage is box body shape, is fixed in body of heater, the temperature that silicon material can be kept to melt, and the silicon material in crucible on young crystalline substance is melted completely.
Lower heating element, the heat exchange platform of described heat-insulation cage inside are connected with lifting column; Upper crucible cover plate, side crucible guard boards, quartz crucible, lower heating element, heat exchange platform can move up and down with lifting column, the dynamic thermal field needed for formation process requires.
Described heat-insulation cage bottom outside is provided with aqueous cold plate, and when crystallization, exposure aqueous cold plate is opened in heat-insulation cage bottom, makes hyperthermia radiation in heat-insulation cage on aqueous cold plate, form the thermograde of single crystal growing, guarantee the growth of silicon single crystal.
Described heat exchange platform is double-layer structure, and lower heat exchange platform is fixedly connected with lower heating element, lifting column; Upper heat exchange platform is movable, is placed in plane on lower heat exchange platform, it is placed quartz crucible, side crucible guard boards, upper crucible cover plate.
The present invention is rational in infrastructure, adopts the aqueous cold plate outside bottom fixed thermal-insulating cage, liftable heat exchange platform and heat-insulation cage, defines more reasonably dynamic six thermal fields; Six formula thermal field type of heating adopt upper and lower heating element and one group of side heating element, and three groups of heating elements all can independently control.Use double-deck heat exchange platform, the convenient and safety of transfer operation.Thus the weak point avoided in current prior art, make the horizontal thermal field gradient of whole thermal field little, the melted silicon material time is short, improves monocrystalline rate, shortens process cycle, improves the production efficiency of equipment, can energy efficient, reduction ingot casting production cost.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with embodiment and accompanying drawing thereof, the present invention will be further described in detail:
As shown in Figure 1, a kind of full monocrystalline silicon cast ingot stove, comprises body of heater 1, heat-insulation cage 11, upper heating element 2, lower heating element 9, side heating element 6, upper crucible cover plate 3, side crucible guard boards 4, quartz crucible 5, upper heat exchange platform 7, lower heat exchange platform 8, lifting column 10, aqueous cold plate 12.
Described heat-insulation cage 11 is box body shape, is fixed in body of heater 1.
The top of described heat-insulation cage 11 inside is fixed with heating element 2, the surrounding of heat-insulation cage 11 inside is fixed with side heating element 6, be provided with heat exchange platform in the middle part of heat-insulation cage 11, heat exchange platform is double-layer structure, and lower heat exchange platform 8 is fixedly connected with lower heating element 9, lifting column 10; Upper heat exchange platform 7 is movable, is placed in the upper plane of lower heat exchange platform 8, and it places quartz crucible 5, and the surrounding of quartz crucible 5 is provided with side crucible guard boards 4, and the top of side crucible guard boards 4 is provided with crucible cover plate 3; Upper crucible cover plate 3, side crucible guard boards 4, quartz crucible 5, upper heat exchange platform 7, lower heat exchange platform 8, lower heating element 9 can move up and down with lifting column 10.
Described heat-insulation cage 11 bottom outside is provided with aqueous cold plate 12.
Above-described is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, under the premise without departing from the principles of the invention, can also make some modification and improvement, and these also should be considered as belonging to protection scope of the present invention.
Claims (1)
1. a full monocrystalline silicon cast ingot stove, comprise body of heater, heat-insulation cage, upper heating element, lower heating element, side heating element, upper crucible cover plate, side crucible guard boards, quartz crucible, heat exchange platform, lifting column, aqueous cold plate, the top of described heat-insulation cage inside is fixed with heating element, the surrounding of heat-insulation cage inside is fixed with side heating element, heat exchange platform is provided with in the middle part of heat-insulation cage, on heat exchange platform, plane is equipped with quartz crucible, the surrounding of quartz crucible is provided with side crucible guard boards, the top of side crucible guard boards is provided with crucible cover plate, is provided with lower heating element bottom heat exchange platform; Described heat-insulation cage is box body shape, is fixed in body of heater; Lower heating element, the heat exchange platform of described heat-insulation cage inside are connected with lifting column; Upper crucible cover plate, side crucible guard boards, quartz crucible, lower heating element, heat exchange platform can move up and down with lifting column; Described heat-insulation cage bottom outside is provided with aqueous cold plate; It is characterized in that: described heat exchange platform is double-layer structure, lower heat exchange platform is fixedly connected with lower heating element, lifting column; Upper heat exchange platform is movable, is placed in plane on lower heat exchange platform, it is placed quartz crucible, side crucible guard boards, upper crucible cover plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410040583.0A CN103741205B (en) | 2014-01-28 | 2014-01-28 | Full monocrystalline silicon cast ingot stove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410040583.0A CN103741205B (en) | 2014-01-28 | 2014-01-28 | Full monocrystalline silicon cast ingot stove |
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| Publication Number | Publication Date |
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| CN103741205A CN103741205A (en) | 2014-04-23 |
| CN103741205B true CN103741205B (en) | 2016-02-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410040583.0A Active CN103741205B (en) | 2014-01-28 | 2014-01-28 | Full monocrystalline silicon cast ingot stove |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109161962A (en) * | 2018-11-28 | 2019-01-08 | 扬州荣德新能源科技有限公司 | A kind of polycrystalline ingot furnace |
| CN113026101A (en) * | 2019-12-25 | 2021-06-25 | 苏州阿特斯阳光电力科技有限公司 | Method for producing quasi-single crystal silicon ingot and quasi-single crystal silicon ingot |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201962416U (en) * | 2010-12-27 | 2011-09-07 | 杭州精功机电研究所有限公司 | Hot door control device for thermal field of crystal silicon ingot furnace |
| CN103409791A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace |
| CN103409795A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Crucible platform lifting mechanism of pseudo-single crystal silicon ingot furnace |
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN203741450U (en) * | 2014-01-28 | 2014-07-30 | 安徽大晟新能源设备科技有限公司 | Full monocrystalline silicon ingot casting furnace |
-
2014
- 2014-01-28 CN CN201410040583.0A patent/CN103741205B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201962416U (en) * | 2010-12-27 | 2011-09-07 | 杭州精功机电研究所有限公司 | Hot door control device for thermal field of crystal silicon ingot furnace |
| CN103409791A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace |
| CN103409795A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Crucible platform lifting mechanism of pseudo-single crystal silicon ingot furnace |
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN203741450U (en) * | 2014-01-28 | 2014-07-30 | 安徽大晟新能源设备科技有限公司 | Full monocrystalline silicon ingot casting furnace |
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| CN103741205A (en) | 2014-04-23 |
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Denomination of invention: Full monocrystalline silicon ingot casting furnace Effective date of registration: 20181221 Granted publication date: 20160224 Pledgee: Anhui Huishang Metal Co., Ltd. Pledgor: Anhui Da Sheng New Energy Equipment Co., Ltd. Registration number: 2018340000756 |
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Effective date of registration: 20201217 Address after: 230000 No. 1019 Fuyang North Road, Hefei, Anhui Province Patentee after: Anhui Huishang Metal Co.,Ltd. Address before: 237000 Yaoli street, Huoqiu County, Lu'an City, Anhui Province Patentee before: ANHUI DA SHENG NEW ENERGY EQUIPMENT Co.,Ltd. |
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