CN203382846U - Hexahedral thermal field structure of thermal insulator of pseudo-single crystal ingot furnace - Google Patents
Hexahedral thermal field structure of thermal insulator of pseudo-single crystal ingot furnace Download PDFInfo
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- CN203382846U CN203382846U CN201320463213.9U CN201320463213U CN203382846U CN 203382846 U CN203382846 U CN 203382846U CN 201320463213 U CN201320463213 U CN 201320463213U CN 203382846 U CN203382846 U CN 203382846U
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- thermal insulator
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Abstract
The utility model relates to a hexahedral thermal field structure of a thermal insulator of a pseudo-single crystal ingot furnace. The hexahedral thermal field structure comprises an upper thermal insulator, a lower thermal insulator, side heating bodies, an upper heating body, a graphite platform, a quartz crucible, a crucible protection plate and a crucible cover plate, wherein a lower heating body is arranged at the bottom of the graphite platform, the lower heating body and the graphite platform are connected with a lifting stand column and can move up and down along with the lifting stand column. The hexahedral thermal field structure is reasonable in structure, a dynamic hexahedral thermal field is formed and heated by the upper heating body, the lower heating body and a group of side surface heating bodies, the three groups of heating bodies can be separately controlled, the horizontal temperature gradient of whole thermal field is less, the time for melting silicon material is short, the single crystal rate can be improved, the technological period can be shortened, and the production efficiency of equipment can be improved.
Description
Technical field
The utility model belongs to accurate single-crystal ingot casting furnace technical field, particularly a kind of thermal insulator internal heat field structure of ingot furnace.
Background technology
Adopt the mode of inducing on accurate single-crystal ingot casting furnace, by the quasi-monocrystalline silicon with high-conversion rate that reasonably the thermal field production control goes out.The accurate single-crystal ingot casting furnace type of heating of home or overseas adopts five upper and lower type of heating of formula type of heating Germany's ALD ingot furnace of U.S. GT ingot furnace now, above two kinds of type of heating have weak point: 1, five formulas of U.S. GT ingot furnace add thermal recovery upper heater and four side heater, without lower well heater, in accurate monocrystalline ingot casting process, the melted silicon material time is long, the horizontal temperature of thermal field gradient of whole thermal field is large, cause side seed crystal fusing too much, be unfavorable for the growth of accurate monocrystalline.2, German ALD ingot furnace adopts upper and lower well heater, and without four side heater, in accurate monocrystalline ingot casting process, the side temperature of thermal field does not catch up with, and is unfavorable for accurate single crystal growing.In the crystallisation process of accurate monocrystalline, during temperature control, the thermograde up and down of thermal insulator inside is controlled difficulty, can not meet the processing requirement of ingot furnace manufacture order crystal silicon.
The utility model content
The purpose of this utility model is to provide six formula thermal field structures of thermal insulator of a kind of accurate single-crystal ingot casting furnace, and to meet, in monocrystalline silicon production, thermal insulator is inner keeps rational thermograde, thereby improves the production efficiency of equipment.
For achieving the above object, the utility model adopts following scheme:
Six formula thermal field structures of a kind of thermal insulator of accurate single-crystal ingot casting furnace, comprise thermal insulator, lower thermal insulator, side heating element, upper heating element, Graphite platform, quartz crucible, crucible guard boards and crucible cover plate, described thermal insulator is box body shape, the top of its inside is fixed with heating element, the thermal insulator surrounding is fixed with the side heating element, the thermal insulator middle part is provided with Graphite platform, on Graphite platform, plane is equipped with quartz crucible, the surrounding of quartz crucible is provided with crucible guard boards, and the top of crucible guard boards is provided with crucible cover plate; Described Graphite platform bottom is provided with lower heating element.
Described lower heating element, Graphite platform are connected with lifting column, can move up and down with lifting column, form the required dynamic thermal field of processing requirement.
The utility model is rational in infrastructure, has formed dynamic six thermal fields, and six formula thermal field type of heating adopt upper and lower heating element and one group of side heating element, and three groups of heating elements all can independently be controlled.Avoid the weak point in above two kinds of prior arts, make the horizontal thermal field gradient of thermal field little, the melted silicon material time is short, improves the monocrystalline rate, shortens whole process cycle, has improved the production efficiency of equipment, but energy efficient, reduces whole ingot casting cost.
The accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with embodiment and accompanying drawing thereof, the utility model is described in more detail:
As shown in Figure 1, six formula thermal field structures of a kind of thermal insulator of accurate single-crystal ingot casting furnace, comprise thermal insulator 7, lower thermal insulator 6, side heating element 4, upper heating element 9, Graphite platform 1, lifting column 5, quartz crucible 3, crucible guard boards 10, crucible cover plate 8 and lower heating element 2.
Described upper thermal insulator 7, lower thermal insulator 6 are combined as box body shape, the top of its inside is fixed with heating element 9, upper thermal insulator 7 surroundings are fixed with side heating element 4, lower thermal insulator 6 middle parts are provided with Graphite platform 1, on Graphite platform 1, plane is equipped with quartz crucible 3, the surrounding of quartz crucible 3 is provided with crucible guard boards 10, and the top of crucible guard boards 10 is provided with crucible cover plate 8; Described Graphite platform 1 bottom is fixed with lower heating element 2.
Described lower heating element 2, Graphite platform 1 connect with the lifting column 5 of hoisting appliance, can move up and down with lifting column 5.
Above-described is only preferred implementation of the present utility model; it should be pointed out that for the person of ordinary skill of the art, under the prerequisite that does not break away from the utility model principle; can also make some modification and improvement, these also should be considered as belonging to protection domain of the present utility model.
Claims (1)
1. six formula thermal field structures of thermal insulator of an accurate single-crystal ingot casting furnace, comprise thermal insulator, lower thermal insulator, the side heating element, upper heating element, Graphite platform, quartz crucible, crucible guard boards and crucible cover plate, described thermal insulator is box body shape, the top of its inside is fixed with heating element, the thermal insulator surrounding is fixed with the side heating element, the thermal insulator middle part is provided with Graphite platform, on Graphite platform, plane is equipped with quartz crucible, the surrounding of quartz crucible is provided with crucible guard boards, the top of crucible guard boards is provided with crucible cover plate, it is characterized in that: described Graphite platform bottom is provided with lower heating element, lower heating element, Graphite platform is connected with lifting column, can move up and down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320463213.9U CN203382846U (en) | 2013-08-01 | 2013-08-01 | Hexahedral thermal field structure of thermal insulator of pseudo-single crystal ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320463213.9U CN203382846U (en) | 2013-08-01 | 2013-08-01 | Hexahedral thermal field structure of thermal insulator of pseudo-single crystal ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203382846U true CN203382846U (en) | 2014-01-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320463213.9U Expired - Lifetime CN203382846U (en) | 2013-08-01 | 2013-08-01 | Hexahedral thermal field structure of thermal insulator of pseudo-single crystal ingot furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN203382846U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409791A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace |
-
2013
- 2013-08-01 CN CN201320463213.9U patent/CN203382846U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409791A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace Effective date of registration: 20181221 Granted publication date: 20140108 Pledgee: Anhui Huishang Metal Co.,Ltd. Pledgor: ANHUI DA SHENG NEW ENERGY EQUIPMENT Co.,Ltd. Registration number: 2018340000756 |
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| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20190627 Granted publication date: 20140108 |
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| PD01 | Discharge of preservation of patent | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20201201 Granted publication date: 20140108 |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201228 Address after: 230000 No. 1019 Fuyang North Road, Hefei, Anhui Province Patentee after: Anhui Huishang Metal Co.,Ltd. Address before: 237000 Yaoli street, Huoqiu County, Lu'an City, Anhui Province Patentee before: ANHUI DA SHENG NEW ENERGY EQUIPMENT Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140108 |