CN201495107U - Polycrystal furnace with high-quality purification polysilicon - Google Patents
Polycrystal furnace with high-quality purification polysilicon Download PDFInfo
- Publication number
- CN201495107U CN201495107U CN2009202346600U CN200920234660U CN201495107U CN 201495107 U CN201495107 U CN 201495107U CN 2009202346600 U CN2009202346600 U CN 2009202346600U CN 200920234660 U CN200920234660 U CN 200920234660U CN 201495107 U CN201495107 U CN 201495107U
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- heater
- furnace
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Abstract
A combined highly-effective polycrystal furnace comprises a furnace body, wherein the upper portion of the furnace body is provided with a furnace door, a thermal-insulating cage is arranged in the furnace body, a charging crucible is placed on a carrying platform at the bottom of the thermal-insulating cage, the thermal-insulating cage comprises a thermal-insulating bottom board, a lateral thermal-insulating board and a thermal-insulating upper cover, wherein a peripheral heater and a lower heater are arranged in the thermal-insulating cage, the lower heater is arranged between the carrying platform and the thermal-insulation bottom board of the thermal-insulating cage, the middle portion of the thermal-insulating bottom board of the thermal-insulating cage is provided with a hot door, a cooling plate is arranged under the hot door, a cooling plate is arranged under the hot door, the thermal-insulating upper cover of the thermal-insulating cage is fixedly connected with the furnace door of the furnace body, an observing window is arranged on the central portion of the furnace door, the lateral portion of the observing window is provided with an inert gas blowing pipe, and an observation hole and a gas blowing hole which is communicated with the inert gas blowing pipe are arranged on the thermal-insulation upper cover of the thermal-insulting cage. When growing crystal, the hot door is firstly opened, the lower heater, the periphery heater and the cooling plate form a new temperature field, and meanwhile, inert gas is blown into the furnace, thereby guaranteeing the growth quality of crystal, further shortening the whole technology time, and having low energy consumption.
Description
Technical field
The utility model relates to a kind of production unit that is used to produce the base mateiral of solar level battery, particularly a kind of combination high-efficiency polycrystalline silicon furnace.
Background technology
Sun power is human inexhaustible renewable energy source, also is clean energy, and solar cell is exactly to utilize photovoltaic effectiveness sun power directly to be converted to a kind of device of electric energy.Making solar cell mainly is based on silicon materials, by the directional freeze ingot casting, have stable efficiency of conversion, and the ratio of performance to price is the highest, will satisfy silico briquette section encapsulation process and become the finished product.
Polycrystalline silicon ingot or purifying furnace is a kind of silicon melting equipment, is to produce the peculiar visual plant of big specification solar level cell polysilicon ingot.In the production, will meet the requirements of polycrystalline silicon material and pack in the stove, come out of the stove by vacuum, heating, fusing, long brilliant, annealing, cooling.Unmelted polycrystalline silicon, long crystalline substance, the such core environment of annealing become thermal field.The home-made polycrystalline silicon furnace is all with bottom-open type, the still supreme combination high-efficiency polycrystalline silicon furnace of putting.
Summary of the invention
The technical problems to be solved in the utility model is at the deficiencies in the prior art, has proposed a kind of reasonable in design, polycrystalline furnace with high quality purifying polycrystalline silicon of improving the silicon wafer ingot quality of production.
The technical problems to be solved in the utility model is achieved through the following technical solutions, a kind of polycrystalline furnace with high quality purifying polycrystalline silicon, be provided with body of heater, the top of body of heater is provided with fire door, be provided with Thermal insulation cage in the body of heater, the charging crucible is placed on accepting on the platform of Thermal insulation cage bottom, Thermal insulation cage is provided with heat insulation bottom board, the side thermal baffle, heat insulation loam cake, be characterized in: well heater and following well heater around in Thermal insulation cage, being provided with, following well heater is arranged between the heat insulation bottom board of accepting platform and Thermal insulation cage, middle part at the Thermal insulation cage heat insulation bottom board is provided with hot topic, below hot topic, be provided with cooling plate, the heat insulation loam cake of Thermal insulation cage is fixedlyed connected with the fire door of body of heater, middle part at fire door is provided with viewing window, sidepiece at viewing window is provided with the rare gas element gas blow pipe, covers on Thermal insulation cage heat insulation and is provided with the vision slit that communicates with viewing window, the gas hole that communicates with the rare gas element blowpipe.
The technical problems to be solved in the utility model can also come by the following technical programs further to realize that well heater, following well heater are all fixed with the side thermal baffle of Thermal insulation cage all around.
The utility model compared with prior art, by cage body, heat insulation bottom board, side thermal baffle around the Thermal insulation cage, heat insulation loam cake constitutes the thermal field chamber of a sealing.Carry out silicon wafer fusing (heating up and insulation) by technological operation, when long crystalline substance, open popular earlier, by following well heater, well heater and cooling plate are formed a new temperature field all around, utilize the well heater and the power match of well heater down all around again, make Thermal insulation cage form a vertical thermograde, simultaneously top rare gas element blowpipe is at blown inert gas (argon gas) in stove continuously, it replaces silicon wafer at fusing and the long brilliant assorted gas that is discharged on the one hand, around it can blow to the impurity on brilliant liquid surface on the other hand, thereby guaranteed the crystal growth quality, treated again silicon wafer to be annealed after the silicon crystallization and cool off until the silicon wafer ingot and come out of the stove.It can not only produce high-quality silicon ingot, also shortens the whole process time, and energy consumption is low.Its thermal field device is reasonable in design, easy and simple to handle, no mechanism relative movement in the stove in the silicon wafer process of growth, and long crystalloid amount is stable, can produce the polycrystal silicon ingot of big specification.
Description of drawings
Fig. 1 is a structure diagram of the present utility model.
Embodiment
A kind of polycrystalline furnace with high quality purifying polycrystalline silicon, be provided with body of heater 12, the top of body of heater 12 is provided with fire door 1, be provided with Thermal insulation cage in the body of heater 12, the charging crucible is placed on accepting on the platform 7 of Thermal insulation cage bottom, and Thermal insulation cage is provided with heat insulation bottom board 13, side thermal baffle 8, heat insulation loam cake 2, well heater 3 and following well heater 9 around being provided with in Thermal insulation cage, following well heater 9 is arranged between the heat insulation bottom board 13 of accepting platform 7 and Thermal insulation cage, and well heater 3, following well heater 9 are all fixing with the side thermal baffle 8 of Thermal insulation cage all around.Be provided with popular 10 at the middle part of Thermal insulation cage heat insulation bottom board 13, below popular 10, be provided with cooling plate 11, the heat insulation loam cake 2 of Thermal insulation cage is fixedlyed connected with the fire door 1 of body of heater, be provided with viewing window 5 at the middle part of fire door 1, sidepiece at viewing window 5 is provided with rare gas element (as argon gas) gas blow pipe 4, is provided with the vision slit that communicates with viewing window, the gas hole that communicates with the rare gas element blowpipe on the heat insulation loam cake 2 of Thermal insulation cage.
The silicon material of in crucible, packing into, lifting goes in the body of heater to accept on the platform, and adjust to the right place, close fire door, open well heater down, well heater all around, carry out silicon wafer fusing (heating up and insulation) by technological operation, when long crystalline substance, open popular earlier, by following well heater, well heater and cooling plate are formed a new temperature field all around, utilize the well heater and the power match of well heater down all around again, make Thermal insulation cage form a vertical thermograde, simultaneously the top tracheae is at blown inert gas (argon gas) in stove continuously, and its replaces silicon wafer at fusing and the long brilliant assorted gas that is discharged, around it can blow to the impurity on brilliant liquid surface on the other hand on the one hand, thereby guaranteed the crystal growth quality, treated again silicon wafer to be annealed after the silicon crystallization and cool off until the silicon wafer ingot and come out of the stove.
The utility model is applicable to that solar-grade polysilicon stove thermal field manufactures and designs, and can produce high-quality silicon ingot, also shortens the whole process time, and energy consumption is low.
Claims (2)
1. polycrystalline furnace with high quality purifying polycrystalline silicon, be provided with body of heater, the top of body of heater is provided with fire door, be provided with Thermal insulation cage in the body of heater, the charging crucible is placed on accepting on the platform of Thermal insulation cage bottom, Thermal insulation cage is provided with heat insulation bottom board, the side thermal baffle, heat insulation loam cake, it is characterized in that: well heater and following well heater around in Thermal insulation cage, being provided with, following well heater is arranged between the heat insulation bottom board of accepting platform and Thermal insulation cage, middle part at the Thermal insulation cage heat insulation bottom board is provided with hot topic, below hot topic, be provided with cooling plate, the heat insulation loam cake of Thermal insulation cage and the fire door of body of heater are fixed, middle part at fire door is provided with viewing window, is provided with the rare gas element gas blow pipe at the sidepiece of viewing window, covers on Thermal insulation cage heat insulation and is provided with the vision slit that communicates with viewing window, the gas hole that communicates with the rare gas element blowpipe.
2. the polycrystalline furnace with high quality purifying polycrystalline silicon according to claim 1 is characterized in that: well heater, following well heater are all fixed with the side thermal baffle of Thermal insulation cage all around.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202346600U CN201495107U (en) | 2009-08-12 | 2009-08-12 | Polycrystal furnace with high-quality purification polysilicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202346600U CN201495107U (en) | 2009-08-12 | 2009-08-12 | Polycrystal furnace with high-quality purification polysilicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201495107U true CN201495107U (en) | 2010-06-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202346600U Expired - Fee Related CN201495107U (en) | 2009-08-12 | 2009-08-12 | Polycrystal furnace with high-quality purification polysilicon |
Country Status (1)
| Country | Link |
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| CN (1) | CN201495107U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN104131344A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | High-impurity molten silicon high-pressure gas-blow separation device and method |
| CN104131345A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Polysilicon semi-fusion casting device adopting bottom air cooling and technology using the same |
| CN105568363A (en) * | 2016-03-10 | 2016-05-11 | 中国电子科技集团公司第十三研究所 | VGF (Vertical Gradient Freeze) pressure furnace for compound in-situ synthesis and continuous crystal growth |
| CN106987901A (en) * | 2017-03-30 | 2017-07-28 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crystalline silicon and preparation method thereof |
-
2009
- 2009-08-12 CN CN2009202346600U patent/CN201495107U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN104131344A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | High-impurity molten silicon high-pressure gas-blow separation device and method |
| CN104131345A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Polysilicon semi-fusion casting device adopting bottom air cooling and technology using the same |
| CN104131344B (en) * | 2014-07-17 | 2016-08-24 | 大连理工大学 | Utilize the high pressure blow-gas high impurity of separation to melt the device of silicon and polysilicon is added thermocoagulation impurity-removing method |
| CN105568363A (en) * | 2016-03-10 | 2016-05-11 | 中国电子科技集团公司第十三研究所 | VGF (Vertical Gradient Freeze) pressure furnace for compound in-situ synthesis and continuous crystal growth |
| CN106987901A (en) * | 2017-03-30 | 2017-07-28 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crystalline silicon and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100602 Termination date: 20110812 |