CN102108545A - Thermal field system suitable for large charge amount of 90t furnace - Google Patents
Thermal field system suitable for large charge amount of 90t furnace Download PDFInfo
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- CN102108545A CN102108545A CN2009102648361A CN200910264836A CN102108545A CN 102108545 A CN102108545 A CN 102108545A CN 2009102648361 A CN2009102648361 A CN 2009102648361A CN 200910264836 A CN200910264836 A CN 200910264836A CN 102108545 A CN102108545 A CN 102108545A
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- heat
- preservation cylinder
- insulation cover
- guide shell
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Abstract
The invention discloses a thermal field system used for manufacturing solar monocrystalline silicon, which comprises a mono-crystal furnace chamber, a graphite crucible, a support rod, a heater, a three-segment crucible, a guiding cylinder, a thermal insulation cylinder and a thermal insulation cover, wherein the thermal insulation cylinder is arranged in the mono-crystal furnace chamber, and is provided with the thermal insulation cover; the guiding cylinder is arranged in the thermal insulation cylinder and is connected with the thermal insulation cover together; the upper end port of the guiding cylinder is connected with the thermal insulation cover, while the lower end port extends into the graphite crucible; the heater is positioned between the three-segment crucible and the side wall of the thermal insulation cylinder and is arranged around the three-segment crucible; the lower end of the three-segment crucible is provided with the support rod; the inner diameter of the guiding cylinder ranges from phi 260 to phi 300mm and the height of the guiding cylinder ranges from 330 to 410mm; the inner diameter of the heater ranges from phi 620 to phi 680mm; and the inner diameter of the three-segment crucible ranges from phi 538 to phi 578mm. The thermal field system can promote thermal insulation of the furnace chamber and increase the charge amount.
Description
Technical field
The present invention relates to silicon single crystal and make field, particularly a kind of thermal field system that feeds intake greatly that is applicable to 90 stoves.
Background technology
Silicon (Si) is a kind of semiconductor element, and solar silicon cell utilizes the characteristic of silicon, forms the photovoltaic special efficacy at silicon face and answers, and produces electric energy.Be the preparation solar battery sheet, need be with directional freeze after the remelting of silicon single crystal raw material, the battery chip module is made in section then.For realizing the directional long crystal process of setting of silicon single crystal, need one can stablize long brilliant thermal field system, this thermal field system comprises furnace chamber, is positioned at the well heater and the following furnace chamber at middle part, described furnace chamber up and down mainly plays heat insulating, and described well heater mainly provides thermal field system intensification necessary energy.
Most of use is the single crystal growing furnace of 80 and 85 models at present.If the single crystal growing furnace with regard to 80 and 85 models does not also strengthen charging capacity, or I think that its profit is seeing of seeing under the situation about cutting down the consumption of energy, 18 cun thermal field charging capacity is just between 55-60KG but the single crystal growing furnace of present 80% 80 models still is, 85 models also be that 20 cun thermal fields are between 70-80KG, if the industrial accident that takes place because of all factors causes your furnace charge of might putting in order to be scrapped in process of production.
And the patent No. is the hot system and device that 200420079639 applications disclose a kind of silicon single-crystal, its system and device comprises graphite crucible, well heater, stay-warm case, insulation cover, lagging material, hot system top is provided with guide shell and insulation cover, and the bottom is provided with the furnace bottom protection plate, the bottom of furnace bottom protection plate and be provided with lagging material on every side, the lagging material in the stay-warm case and the stay-warm case outside is supported on the furnace bottom protection plate, and insulation cover is arranged on above the graphite cover, and water conservancy diversion is arranged in the lid mouth of insulation cover.
In above-mentioned traditional hot field system, its shortcoming is that the heating effect of described internal system can't be satisfactory, and hot system and device is also not enough on feeding in raw material, and this also causes output few.
Summary of the invention
The purpose of this invention is to provide a kind of thermal field system that feeds intake greatly that is applicable to 90 stoves, can well realize heat supply and insulation, increase charging capacity.
On the one hand, the invention provides a kind of thermal field system that solar monocrystalline silicon is made that is used for, comprise furnace chamber, be positioned at the well heater at middle part and descend furnace chamber.
Adopt a kind of thermal field system that feeds intake greatly that is applicable to 90 stoves of the present invention, the increase charging capacity of described thermal field system reduces manufacturing cost.
Technical scheme of the present invention is a kind of thermal field system that solar monocrystalline silicon is made that is used for, comprise the monocrystalline furnace chamber, the graphite crucible, pressure pin, well heater, three lobe crucibles, guide shell, heat-preservation cylinder, insulation cover, the indoor heat-preservation cylinder that is provided with of single crystal growing furnace wherein, heat-preservation cylinder is provided with insulation cover, and guide shell is set in the heat-preservation cylinder, and guide shell and insulation cover link together, the upper port of guide shell is connected with insulation cover, lower port stretches in the graphite crucible, and well heater is provided with around three lobe crucibles between three lobe crucibles and heat-preservation cylinder sidewall, three lobe crucible lower ends are provided with pressure pin, and wherein said guide shell inside diameter ranges is
Arrive
Mm, altitude range are 330 to 410mm, and the inside diameter ranges of described well heater is
Arrive
Mm, described three lobe crucible inside diameter ranges are
Arrive
Mm.
Described guide shell is divided into the guide shell internal layer. and the guide shell skin, the inside diameter ranges of guide shell internal layer is
Arrive
Mm, the outer field inside diameter ranges of guide shell is
Arrive
Mm.
Described heat-preservation cylinder divides goes up heat-preservation cylinder. middle heat-preservation cylinder, and following heat-preservation cylinder, wherein the heat-preservation cylinder bottom has following heat-preservation cylinder, middle part to have middle heat-preservation cylinder and top that last heat-preservation cylinder is arranged, and the inside diameter ranges of last insulated tank tube is
Arrive
Mm, the inside diameter ranges of middle heat-preservation cylinder is
Arrive
Mm, the inside diameter ranges of following heat-preservation cylinder is
Arrive
Mm.
Described insulation cover divides goes up insulation cover and following insulation cover, wherein goes up heat-preservation cylinder and is provided with down insulation cover, and guide shell is provided with insulation cover, and the internal diameter of last insulation cover is
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Mm, the internal diameter of following insulation cover is
Arrive
Mm.The external diameter of described pressure pin is
Arrive
Mm.
Effective effect of the present invention is: the present invention can improve heating effect by the size and the structure of Adjustment System inside, and hot system and device is also abundant on feeding in raw material, and output increases.
Description of drawings
Fig. 1 is the structure iron of thermal field system of the present invention;
Wherein pictorial symbolization is:
1. furnace chamber on 10. times insulation covers 11. of insulation cover on 8. times heat-preservation cylinders 9. of heat-preservation cylinder in the insulated tank tube 7. on the pressure pin 2. well heaters 3. 3 lobe crucibles 4. guide shell internal layers 5. guide shell skins 6.
Embodiment
Further specify technical scheme of the present invention below in conjunction with drawings and Examples.
Referring to Fig. 1, Fig. 1 has shown a kind of thermal field system that solar monocrystalline silicon is made that is used for, comprise the monocrystalline furnace chamber, the graphite crucible, pressure pin 1, well heater 2, three lobe crucibles 3, guide shell internal layer 4, guide shell skin 5, last insulated tank tube 6, middle heat-preservation cylinder 7, following heat-preservation cylinder 8, last insulation cover 9 and following insulation cover 10, the indoor insulated tank tube 6 that is provided with of single crystal growing furnace wherein is respectively arranged with insulation cover 9 and following insulation cover 10 on middle heat-preservation cylinder 7 and the following heat-preservation cylinder 8, last insulated tank tube 6 and following heat-preservation cylinder 8, at last insulated tank tube 6, middle heat-preservation cylinder 7 and following heat-preservation cylinder 8 inside all are provided with guide shell internal layer 4 and guide shell skin 5, and guide shell skin 5 is connected with following insulation cover 10 respectively at the last insulation cover 9 of correspondence, and the upper port of guide shell skin 5 is connected with following insulation cover 10 with last insulation cover 9, lower port stretches in the graphite crucible, well heater 2 is provided with around three lobe crucibles 3 between three lobe crucibles 3 and each heat-preservation cylinder sidewall, and three lobe crucibles, 3 lower ends are provided with pressure pin 1.
Introduce below the desired result that uses the present invention to obtain (the present invention is the improvement to thermal field system, thus by before improving and the contrast after the improvement describe):
Specific embodiment 1:
Adorn different graphite thermal fields in 90-22, wherein the size of each parts is as follows:
1. pressure pin external diameter
Mm
2. well heater: internal diameter
Mm, total height 655mm, hot zone 500mm
3. three lobe crucibles: external diameter
Mm, internal diameter
Mm, height 412mm
4. guide shell internal layer: internal diameter
Mm, height 357mm
5. guide shell skin: under the internal diameter
Mm, height 370mm
6. go up the insulated tank tube: internal diameter
Mm, total height 240mm, rim of the mouth height 10mm
7. middle heat-preservation cylinder: internal diameter
Mm, height 560mm
8. descend heat-preservation cylinder: internal diameter
Mm, height 320mm
9. go up insulation cover: internal diameter
Mm, external diameter
Mm
10. descend insulation cover: internal diameter
Mm
Specific embodiment 2:
Adorn different graphite thermal fields in 90-22, wherein the size of each parts is as follows:
1. pressure pin external diameter
Mm
2. well heater: external diameter
Mm, total height 655mm, hot zone 500mm
3. three lobe crucibles: external diameter
Mm, internal diameter
Mm, height 412mm
4. guide shell internal layer: internal diameter
Mm, height 357mm
5. guide shell skin: under the internal diameter
Mm, height 370mm
6. go up the insulated tank tube: internal diameter
Mm, total height 240mm, rim of the mouth height 10mm
7. middle heat-preservation cylinder: internal diameter
Mm, height 560mm
8. descend heat-preservation cylinder: internal diameter
Mm, height 320mm
9. go up insulation cover: internal diameter
Mm, external diameter
Mm
10. descend insulation cover: internal diameter
Mm
Specific embodiment 3:
The price and the yield rate of the thermal field system of before the improvement and improvement back specific embodiment 1 contrast: the obvious rising of yield rate also stablized after improving, and improved 60%, illustrates after thermal field improves ordinary production raising output has been played very big improvement.Specifically referring to table 1 and table 2:
Table 1: price
| Specification | Thermal field price (unit/cover) | The quartz crucible price (unit/only) |
| 85 stoves (18 ") | 95000 | 1550 |
| 85 stoves (20 ") | 122000 | 2550 |
| 90 stoves (22 ") | 200000 | 4500 |
Table 2: improve the back yield rate
| Specification | The quartz crucible specification | Actual charging capacity (Kg) |
| 85 stoves | 18″ | 60 |
| (18″) | ||
| 85 stoves (20 ") | 20″ | 75 |
| 90 stoves (22 ") | 22″ | 120 |
Before improving with improve after qualified length of actual output and the contrast of crystal pulling cycle:
Energy consumption
| Specification | Actual consumption (the single stove of KW/) | The qualified length of actual output (mm) |
| 85 stoves (18 ") | 1902 | 1200 |
| 85 stoves (20 ") | 2903 | 1450 |
| 90 stoves (22 ") | 4111 | 2500 |
The experimental result contrast
Experiment conclusion: the production capacity of one 90 stove (22 inches) is equivalent to the production capacity of 2 85 stoves (18 inches).The production capacity that is equivalent to 1.5 85 stoves (20 inches).
Above embodiment is used for illustrating the present invention, and is not to be used as limitation of the invention, as long as in connotation scope of the present invention, all will drop in claims scope of the present invention variation, the modification of above embodiment.
Claims (5)
1. one kind is used for the thermal field system that solar monocrystalline silicon is made, comprise the monocrystalline furnace chamber, the graphite crucible, pressure pin, well heater, three lobe crucibles, guide shell, heat-preservation cylinder, insulation cover, the indoor heat-preservation cylinder that is provided with of single crystal growing furnace wherein, insulation cover is set on the heat-preservation cylinder, guide shell is set in the heat-preservation cylinder, guide shell and insulation cover link together, the upper port of guide shell is connected with insulation cover, lower port stretches in the graphite crucible, and well heater is provided with around three lobe crucibles between three lobe crucibles and heat-preservation cylinder sidewall, three lobe crucible lower ends are provided with pressure pin, and wherein said guide shell inside diameter ranges is
Arrive
Altitude range is 330 to 410mm, and the inside diameter ranges of described well heater is
Arrive
Described three lobe crucible inside diameter ranges are
Arrive
2. thermal field system as claimed in claim 1 is characterized in that described guide shell is divided into the guide shell internal layer. the guide shell skin, the inside diameter ranges of guide shell internal layer is
Arrive
The outer field inside diameter ranges of guide shell is
Arrive
3. thermal field system as claimed in claim 1 is characterized in that, described heat-preservation cylinder divides goes up heat-preservation cylinder. middle heat-preservation cylinder. and following heat-preservation cylinder. wherein the heat-preservation cylinder bottom has following heat-preservation cylinder, middle part to have middle heat-preservation cylinder and top that last heat-preservation cylinder is arranged, and the inside diameter ranges of last insulated tank tube is
Arrive
The inside diameter ranges of middle heat-preservation cylinder is
Arrive
The inside diameter ranges of following heat-preservation cylinder is
Arrive
4. as the arbitrary described thermal field system of claim 1 to 3, it is characterized in that described insulation cover divides goes up insulation cover and following insulation cover, wherein goes up heat-preservation cylinder and is provided with down insulation cover, guide shell is provided with insulation cover, and the internal diameter of last insulation cover is
Arrive
The internal diameter of following insulation cover is
Arrive
5. as the arbitrary described thermal field system of claim 1 to 3, it is characterized in that the external diameter of described pressure pin is
Arrive
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102648361A CN102108545A (en) | 2009-12-24 | 2009-12-24 | Thermal field system suitable for large charge amount of 90t furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102648361A CN102108545A (en) | 2009-12-24 | 2009-12-24 | Thermal field system suitable for large charge amount of 90t furnace |
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| Publication Number | Publication Date |
|---|---|
| CN102108545A true CN102108545A (en) | 2011-06-29 |
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| CN2009102648361A Pending CN102108545A (en) | 2009-12-24 | 2009-12-24 | Thermal field system suitable for large charge amount of 90t furnace |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312285A (en) * | 2011-07-04 | 2012-01-11 | 浙江晶盛机电股份有限公司 | External continuous feeding mechanism for monocrystal furnace |
| CN103103607A (en) * | 2013-02-25 | 2013-05-15 | 天津市环欧半导体材料技术有限公司 | Thermal system for drawing 8 inch heavy As-doped silicon single crystal |
| CN104630886A (en) * | 2015-02-09 | 2015-05-20 | 洛阳巨子新能源科技有限公司 | Crystalline silicon growth device |
| CN104975341A (en) * | 2015-06-24 | 2015-10-14 | 吴倩颖 | Method for increasing batch feeding amount for single crystal pulling |
| CN113913921A (en) * | 2021-10-26 | 2022-01-11 | 新美光(苏州)半导体科技有限公司 | Flow guide device for growth of single crystal silicon rod, growth equipment and method for growth of single crystal silicon rod |
-
2009
- 2009-12-24 CN CN2009102648361A patent/CN102108545A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312285A (en) * | 2011-07-04 | 2012-01-11 | 浙江晶盛机电股份有限公司 | External continuous feeding mechanism for monocrystal furnace |
| CN102312285B (en) * | 2011-07-04 | 2014-02-19 | 浙江晶盛机电股份有限公司 | External continuous feeding mechanism for monocrystal furnace |
| CN103103607A (en) * | 2013-02-25 | 2013-05-15 | 天津市环欧半导体材料技术有限公司 | Thermal system for drawing 8 inch heavy As-doped silicon single crystal |
| CN103103607B (en) * | 2013-02-25 | 2015-04-08 | 天津市环欧半导体材料技术有限公司 | Thermal system for drawing 8 inch heavy As-doped silicon single crystal |
| CN104630886A (en) * | 2015-02-09 | 2015-05-20 | 洛阳巨子新能源科技有限公司 | Crystalline silicon growth device |
| CN104975341A (en) * | 2015-06-24 | 2015-10-14 | 吴倩颖 | Method for increasing batch feeding amount for single crystal pulling |
| CN113913921A (en) * | 2021-10-26 | 2022-01-11 | 新美光(苏州)半导体科技有限公司 | Flow guide device for growth of single crystal silicon rod, growth equipment and method for growth of single crystal silicon rod |
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Addressee: Yan Jun Document name: Notification of Passing Preliminary Examination of the Application for Invention |
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| C10 | Entry into substantive examination | ||
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Application publication date: 20110629 |