CN201485535U - Double-heating system monocrystalline silicon growing device - Google Patents
Double-heating system monocrystalline silicon growing device Download PDFInfo
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- CN201485535U CN201485535U CN200920186924XU CN200920186924U CN201485535U CN 201485535 U CN201485535 U CN 201485535U CN 200920186924X U CN200920186924X U CN 200920186924XU CN 200920186924 U CN200920186924 U CN 200920186924U CN 201485535 U CN201485535 U CN 201485535U
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- furnace
- furnace bottom
- heat insulating
- holding furnace
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Abstract
The utility model relates to a double-heating system monocrystalline silicon growing device which comprises a heat insulating furnace; a heat insulating tube is arranged in the heat insulating furnace; the bottom of the heat insulating furnace is provided with a furnace bottom fender, a furnace bottom tablet, a graphite crucible and a crucible shaft; the crucible shaft protective cover is sleeved outside the crucible shaft, and the end thereof which is arranged in the heat insulating furnace is connected with a tray; the graphite crucible is arranged on a tray; the bottom of the heat insulating furnace is provided with an electrode column; the top of the electrode column is provided with a heater; the mouth of the heat insulating furnace is subsequently provided with a heat insulating upper cover and a heat insulating lower cover from up to down; the end of the heat insulating upper cover is connected with an inner draft tube; the end of the heat insulating lower cover is connected with an outer draft tube; the inner draft tube and the outer draft tube are respectively inclined and extend into the graphite crucible; the inner draft tube is connected with the outer draft tube end to end; filler is filled in a spacing between the inner and the outer draft tubes; the spacing between the heat insulating upper cover and the heat insulating lower cover is also filled with the filler; the top end of the electrode column is also connected with an auxiliary heater; the auxiliary heater is arranged below the tray; and the side surface at the bottom of the heat insulating tube is also communicated with an exhaust tube.
Description
Technical field
The utility model relates to the hot system that the fusion of policrystalline silicon body, crystalline growth become single crystal; Be the hot system of Czochralski method CZ pulling of crystals method, especially a kind of two heating system silicon monocrystal growth devices that are applied to the silicon crystal growth apparatus.
Background technology
Czochralski method CZ pulling of crystals method, by the graphite resistance heating, with the unmelted polycrystalline silicon that is contained in the quartz crucible, and maintenance is a little more than the temperature of silicon fusing point; under the protection of rare gas element,, change shoulder through seeding, shouldering; isometrical, ending, steps such as crystal taking-up are finished crystal growth.The size of growing single-crystal body is big more, and is also high more to the requirement of the hot system of graphite.
The fusing point of silicon is 1420 °, if 22 cun open thermal field device charging capacity 85kg, keep this temperature per hour needs to expend electric energy about 120kw.h.Present world energy sources anxiety, energy cost day is higher, how to reduce production energy consumption, reduces production costs the direct relation Business survival matter of fundamental importance.
The processing technology and the industrial scale that are currently applied to the used hot system of graphite of silicon monocrystal growth are in rank first in China, yet in the design of the hot system of graphite of some growing large-size single crystal, it is big temperature fluctuation often to occur in the single crystal growth process, temperature compensation does not catch up with, many situations such as disconnected rib appear, cause in large size silicon monocrystal growth technology immature, production cost is too high, bring very big negative impact for the industry development of enterprise and domestic large diameter silicon monocrystal, can't make large diameter silicon single crystal obtain market approval and universal; At present whole domestic industry still is in silicon monocrystal growth below 8 inches, however the foreign market demand of silicon single-crystal more than 8 cun and 8 cun is grown with each passing day, how to design the hot system of growth large diameter silicon monocrystal more than 8 cun, extremely urgent.
Therefore people have just done many improvement at the heating unit of CZ pulling of crystals method above the graphite thermal field.Effect is the most tangible to be exactly to increase the heat shielding device, but crystal is keeping that follow-up process of growth temperature can't obtain continuing, and crystal produces constitutional supercooling and unordered growth.
The utility model content
The purpose of this utility model provides a kind of pair of heating system silicon monocrystal growth device, adopt two heating systems to keep the temperature compensation of crystalline subsequent growth, shorten the fusion time of policrystalline silicon simultaneously, increase the thermal radiation function in the thermal field, reduce calorific loss, reach energy saving purposes.
In order to achieve the above object, the technical scheme that the utility model adopted is:
Two heating system silicon monocrystal growth devices, include the holding furnace of an end opening, be provided with the heat-preservation cylinder of being close to the holding furnace inwall in the described holding furnace, described holding furnace bottom is provided with furnace bottom backplate and furnace bottom compressing tablet from top to bottom successively, combine closely at the bottom of described furnace bottom compressing tablet and the holding furnace, also include plumbago crucible and crucible shaft, described crucible shaft is passed the holding furnace bottom successively, furnace bottom compressing tablet and furnace bottom backplate stretch in the holding furnace, described crucible shaft is with the crucible shaft sheath outward, its end that is positioned at holding furnace is connected with pallet, described plumbago crucible is positioned on the pallet, described holding furnace bottom is equipped with the electrode column that connects with external power source, described electrode column passes furnace bottom compressing tablet and furnace bottom backplate, be positioned at holding furnace inside, described electrode column top screws togather having heaters by the electrode screw, described well heater is positioned at around the described plumbago crucible, it is characterized in that: described holding furnace fire door place is disposed with insulation loam cake and insulation lower cover from top to bottom, described insulation loam cake end is connected with inner draft tube, insulation lower cover end is connected with external flow guiding cylinder, described inner draft tube and external flow guiding cylinder tilt to stretch in the described plumbago crucible respectively, wherein the gradient of external flow guiding cylinder is greater than inner draft tube, described inner draft tube and external flow guiding cylinder end link to each other, in, be filled with weighting material in the space between the external flow guiding cylinder, be filled with weighting material in the space between described insulation loam cake and the insulation lower cover, described electrode column top also is connected with auxilliary well heater, described auxilliary well heater is positioned at described pallet below, be filled with weighting material between described furnace bottom backplate and the furnace bottom compressing tablet, described heat-preservation cylinder bottom sides also is communicated with aiutage, and described aiutage stretches out holding furnace and is communicated with the external vacuum pipeline.
Described pair of heating system silicon monocrystal growth device is characterized in that: also be with the multi-layer heat preserving plate on the described electrode column to separate well heater and described furnace bottom backplate, be provided with support ring between the multi-layer heat preserving plate to support warming plate.
3 described pairs of heating system silicon monocrystal growth devices is characterized in that: described heat-preservation cylinder is divided into tube and insulation doffing in insulation top cylinder, the insulation.
Described pair of heating system silicon monocrystal growth device is characterized in that: described electrode column is with quartz sheath and electrode sheath outward successively.
Described pair of heating system silicon monocrystal growth device is characterized in that: described crucible shaft is screwed together by screw and described pallet.
Described pair of heating system silicon monocrystal growth device is characterized in that: described electrode screw is with the screw sheath outward.
Described pair of heating system silicon monocrystal growth device is characterized in that: described weighting material is a graphite carbon felt.
Principle of design of the present utility model increases the heat insulation effect of heat-insulation system exactly, reduces the thermal radiation heat radiation, changes thermograde in the melt, reduces the transverse temperature graded, makes that the melt liquid level temperature is relatively stable, is beneficial to silicon monocrystal growth; Improve airflow guiding device, avoid occurring turbulence.The utility model is by reaching above purpose with lower member:
1. the insulation cover plate adopts bilayer structure, the partially filled carbon felt of intermediate gaps, the top heat-insulation system of reinforcement body of heater; The isolated measure of graphite carbon felt is adopted in the furnace bottom insulation, fills the carbon felt between furnace bottom backplate and furnace bottom compressing tablet, increases the insulation of body of heater bottom; Inside and outside guide shell and between fill the carbon felt, and change the bevel angle of external flow guiding cylinder, increase the thermal radiation reflecting effect of guide shell, reduce heat radiation; Simultaneously, the effect of heat insulation difference, when having changed the silicon single-crystal crystal growth, longitudinal temperature gradient changes, and increases the limit pulling rate about 6% of crystal growth.
2. gas adopts bilayer structure to guiding device, and the gradient of external flow guiding cylinder is bigger, and when having reduced silicon monocrystal growth, the friction of rare gas element and guiding device reduces forming turbulent air flow when drawing, and influences crystal growth.The use of aiutage, make air-flow from the direct water conservancy diversion of stove tube as in the vacuum-pump line, avoid that graphite carbon felt contact in air-flow and the body of heater, avoid the interior evaporable impurity of body of heater residual in body of heater, influence crystal growth.
The utility model structurally has following characteristics: 1. adopt auxilliary well heater to heat at times, strengthen the thermal radiation of thermal field inside; 2. the insulation cover plate adopts bilayer structure, and intermediate gaps is filled graphite carbon felt, strengthens the top insulation; 3. graphite carbon felt is filled in the space between backplate and the furnace bottom compressing tablet at the bottom of the increase lower furnace, strengthens insulation; 4. the outer bevel angle of guiding device changes, and reduces the resistance to air-flow, avoids occurring turbulent flow; 5. increase the aiutage between body of heater and the vacuum pipe, avoid occurring the interior volatile matter of body of heater and remain in the exhaust pipe mouth position, influence the body of heater air-flow.
The utility model is at the stability of melt liquid level temperature, and the stable aspect of air-flow, and all the traditional hot system improves a lot relatively; Be fit to feed intake more than the 120kg silicon monocrystal growth of 8 cun and above size.Compare with prior art, the utility model also has the following advantages:
(1) at the stability of temperature of thermal field, and improves a lot on the smooth performance of gas, increased the yield rate of large diameter silicon monocrystal growth more than 8 cun and 8 cun.The 120kg that feeds intake, the yield rate that draws 8 cun solar energy silicon single crystal rods is 96%.
(2) the silicon single-crystal quality is also improved a lot, the 120kg that feeds intake, 8 cun solar energy silicon single crystal rod interstitial oxygen contents of drawing are 27ppma (1.35 * 10
18Atom/s), C content＜0.1ppma (5 * 10
15Om/s), meet present industry standard.
Description of drawings
Fig. 1 is the utility model structural representation.
Embodiment
As shown in Figure 1.Two heating system silicon monocrystal growth devices include the holding furnace 25 of an end opening, are provided with the heat-preservation cylinder of being close to the holding furnace inwall in the holding furnace 25, and heat-preservation cylinder is divided into tube 14 and insulation doffing 15 in insulation top cylinder 13, the insulation.Holding furnace 25 bottoms are provided with furnace bottom backplate 16 and furnace bottom compressing tablet 17 from top to bottom successively, furnace bottom compressing tablet 17 was combined closely with 25 ends of holding furnace, also include plumbago crucible 3 and crucible shaft 5, crucible shaft 5 is passed holding furnace 25 bottoms, furnace bottom compressing tablet 17 and furnace bottom backplate 16 successively and is stretched in the holding furnace, the crucible shaft 5 outer crucible shaft sheaths 6 that are with, its end that is positioned at holding furnace 25 is connected with pallet 4, and crucible shaft 5 is screwed together by screw 24 and described pallet 4.Plumbago crucible 3 is positioned on the pallet 4, and holding furnace 25 bottoms are equipped with the electrode column 10 that connects with external power source, electrode column 10 outer quartz sheath 22 and the electrode sheaths 21 of being with successively.Electrode column 10 passes furnace bottom compressing tablet 17 and furnace bottom backplate 16, is positioned at holding furnace 25 inside, and electrode column 10 tops screw togather having heaters 7 by electrode screw 8, the electrode screw 8 outer screw sheaths 9 that are with.Also be with multi-layer heat preserving plate 19 on the electrode column 10 to separate well heater 7 and furnace bottom backplate 16, be provided with support ring 20 between the multi-layer heat preserving plate 19 to support warming plate 19.Well heater 7 is positioned at around the plumbago crucible 3, holding furnace fire door place is disposed with insulation loam cake 11 and insulation lower cover 12 from top to bottom, insulation loam cake 11 ends are connected with inner draft tube 1, insulation lower cover 12 ends are connected with external flow guiding cylinder 2, inner draft tube 1 and external flow guiding cylinder 2 tilt to stretch in the plumbago crucible 3 respectively, wherein the gradient of external flow guiding cylinder 2 is greater than inner draft tube 1, inner draft tube 1 and external flow guiding cylinder 2 ends link to each other, in, be filled with graphite carbon felt in the space between the external flow guiding cylinder, be filled with graphite carbon felt in the space between insulation loam cake 11 and the insulation lower cover 12, the electrode column top also is connected with auxilliary well heater 23, auxilliary well heater 23 is positioned at pallet 4 belows, be filled with graphite carbon felt between furnace bottom backplate 16 and the furnace bottom compressing tablet 17, the heat-preservation cylinder bottom sides also is communicated with aiutage 18, and aiutage 18 stretches out holding furnace and is communicated with the external vacuum pipeline.
Claims (7)
1. two heating system silicon monocrystal growth devices, include open holding furnace, be provided with the heat-preservation cylinder of being close to the holding furnace inwall in the described holding furnace, described holding furnace bottom is provided with furnace bottom backplate and furnace bottom compressing tablet from top to bottom successively, combine closely at the bottom of described furnace bottom compressing tablet and the holding furnace, also include plumbago crucible and crucible shaft, described crucible shaft is passed the holding furnace bottom successively, furnace bottom compressing tablet and furnace bottom backplate stretch in the holding furnace, described crucible shaft is with the crucible shaft sheath outward, its end that is positioned at holding furnace is connected with pallet, described plumbago crucible is positioned on the pallet, described holding furnace bottom is equipped with the electrode column that connects with external power source, described electrode column passes furnace bottom compressing tablet and furnace bottom backplate, be positioned at holding furnace inside, described electrode column top screws togather having heaters by the electrode screw, described well heater is positioned at around the described plumbago crucible, it is characterized in that: described holding furnace fire door place is disposed with insulation loam cake and insulation lower cover from top to bottom, described insulation loam cake end is connected with inner draft tube, insulation lower cover end is connected with external flow guiding cylinder, described inner draft tube and external flow guiding cylinder tilt to stretch in the described plumbago crucible respectively, wherein the gradient of external flow guiding cylinder is greater than inner draft tube, described inner draft tube and external flow guiding cylinder end link to each other, in, be filled with weighting material in the space between the external flow guiding cylinder, be filled with weighting material in the space between described insulation loam cake and the insulation lower cover, described electrode column top also is connected with auxilliary well heater, described auxilliary well heater is positioned at described pallet below, be filled with weighting material between described furnace bottom backplate and the furnace bottom compressing tablet, described heat-preservation cylinder bottom sides also is communicated with aiutage, and described aiutage stretches out holding furnace and is communicated with the external vacuum pipeline.
2. according to claim 1 pair of heating system silicon monocrystal growth device is characterized in that: also be with the multi-layer heat preserving plate on the described electrode column to separate well heater and described furnace bottom backplate, be provided with support ring between the multi-layer heat preserving plate to support warming plate.
3. according to claim 1 pair of heating system silicon monocrystal growth device is characterized in that: described heat-preservation cylinder is divided into tube and insulation doffing in insulation top cylinder, the insulation.
4. according to claim 1 pair of heating system silicon monocrystal growth device is characterized in that: described electrode column is with quartz sheath and electrode sheath outward successively.
5. according to claim 1 pair of heating system silicon monocrystal growth device is characterized in that: described crucible shaft is screwed together by screw and described pallet.
6. according to claim 1 pair of heating system silicon monocrystal growth device is characterized in that: described electrode screw is with the screw sheath outward.
7. according to claim 1 pair of heating system silicon monocrystal growth device is characterized in that: described weighting material is a graphite carbon felt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920186924XU CN201485535U (en) | 2009-08-13 | 2009-08-13 | Double-heating system monocrystalline silicon growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920186924XU CN201485535U (en) | 2009-08-13 | 2009-08-13 | Double-heating system monocrystalline silicon growing device |
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| CN201485535U true CN201485535U (en) | 2010-05-26 |
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| CN200920186924XU Expired - Fee Related CN201485535U (en) | 2009-08-13 | 2009-08-13 | Double-heating system monocrystalline silicon growing device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101864591A (en) * | 2010-06-04 | 2010-10-20 | 浙江芯能光伏科技有限公司 | Improving method of silicon monocrystalline furnace thermal field system |
| CN102168300A (en) * | 2011-04-06 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Thermal system for preparing heavily-doped silicon single crystal |
| WO2012031417A1 (en) * | 2010-09-08 | 2012-03-15 | 有研半导体材料股份有限公司 | Method for controlling defects in czochralski silicon single crystal rod |
| CN102400232A (en) * | 2011-11-15 | 2012-04-04 | 镇江环太硅科技有限公司 | Graphite/carbon felt composite electrode for monocrystalline silicon growing furnace |
| CN110528064A (en) * | 2019-09-17 | 2019-12-03 | 大同新成新材料股份有限公司 | A kind of monocrystalline silicon growing device and monocrystalline silicon growing method |
| TWI749560B (en) * | 2019-06-18 | 2021-12-11 | 大陸商上海新昇半導體科技有限公司 | A semiconductor crystal growth apparatus |
| CN114293256A (en) * | 2021-12-30 | 2022-04-08 | 有研科技集团有限公司 | Thermal field and growth process for growing dislocation-free germanium single crystal by Czochralski method |
-
2009
- 2009-08-13 CN CN200920186924XU patent/CN201485535U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101864591A (en) * | 2010-06-04 | 2010-10-20 | 浙江芯能光伏科技有限公司 | Improving method of silicon monocrystalline furnace thermal field system |
| CN101864591B (en) * | 2010-06-04 | 2012-02-29 | 浙江芯能光伏科技有限公司 | Improved 800type silicon monocrystalline furnace thermal field system |
| WO2012031417A1 (en) * | 2010-09-08 | 2012-03-15 | 有研半导体材料股份有限公司 | Method for controlling defects in czochralski silicon single crystal rod |
| CN102168300A (en) * | 2011-04-06 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Thermal system for preparing heavily-doped silicon single crystal |
| CN102400232A (en) * | 2011-11-15 | 2012-04-04 | 镇江环太硅科技有限公司 | Graphite/carbon felt composite electrode for monocrystalline silicon growing furnace |
| TWI749560B (en) * | 2019-06-18 | 2021-12-11 | 大陸商上海新昇半導體科技有限公司 | A semiconductor crystal growth apparatus |
| CN110528064A (en) * | 2019-09-17 | 2019-12-03 | 大同新成新材料股份有限公司 | A kind of monocrystalline silicon growing device and monocrystalline silicon growing method |
| CN114293256A (en) * | 2021-12-30 | 2022-04-08 | 有研科技集团有限公司 | Thermal field and growth process for growing dislocation-free germanium single crystal by Czochralski method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Double-heating system monocrystalline silicon growing device Effective date of registration: 20110425 Granted publication date: 20100526 Pledgee: Hefei Jinding Company Limited by Guarantee Pledgor: Hefei Jingkun New Energy Co., Ltd. Registration number: 2011990000141 |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 Termination date: 20120813 |