CN101864591A - Improving method of silicon monocrystalline furnace thermal field system - Google Patents
Improving method of silicon monocrystalline furnace thermal field system Download PDFInfo
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- CN101864591A CN101864591A CN 201010194521 CN201010194521A CN101864591A CN 101864591 A CN101864591 A CN 101864591A CN 201010194521 CN201010194521 CN 201010194521 CN 201010194521 A CN201010194521 A CN 201010194521A CN 101864591 A CN101864591 A CN 101864591A
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- crucible
- thermal field
- field system
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 5
- 239000004917 carbon fiber Substances 0.000 claims abstract description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007787 solid Substances 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims description 33
- 238000004321 preservation Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 239000002210 silicon-based material Substances 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
The invention relates to an improving method of a silicon monocrystalline furnace thermal field system, which improves and designs a silicon monocrystalline furnace which is commonly used in the prior art and is implemented under the premise of maintaining the structure of a traditional furnace chamber. The improving method comprises the following steps that: increasing the diameter of a heat insulating tube and a heater, increasing the diameter and the height of a crucible, increasing the diameter and the height of a draft tube, correspondingly increasing the diameter and the thickness of a crucible support and adjusting the size of a support post and the diameter and the height of a graphite electrode; a heat insulating layer adopts a carbon fiber solid felt and is divided into an upper heat insulating casing, a middle heat insulating casing and a lower heat insulating casing; and a retaining ring is arranged above a heat insulating cover. The improving method of the silicon monocrystalline furnace thermal field system can increase the fed amount of the silicon monocrystalline furnace, increase the diameter and/or the length of a produced monocrystalline silicon rod so as to improve the efficiency of a finished solar cell, improve the utilization rate of silicon material, reduce the unit energy consumption, improve the production efficiency and reduce the production cost.
Description
Technical field
The invention belongs to the green energy resource technical field of solar batteries, particularly relate to a kind of the improving one's methods of thermal field system of the monocrystal stove for preparing silicon single crystal rod.Described silicon single crystal rod is used to prepare monocrystalline silicon chip of solar cell.
Background technology
Sun power is a kind of inexhaustible, nexhaustible green energy resource.Solar cell is the primary clustering of solar photovoltaic generation system, and wherein monocrystaline silicon solar cell is present a kind of solar cell with fastest developing speed.The quality of monocrystalline silicon piece directly affects the quality of monocrystaline silicon solar cell, and the quality that improves monocrystalline silicon piece is the prerequisite of producing high-effect solar cell.At present, generally adopt traditional czochralski growth method manufacture order crystal silicon both at home and abroad, then through being cut into monocrystalline silicon piece.The big young pathbreaker of silicon single crystal rod diameter directly influences the usefulness of finished product solar cell, influences the utilising efficiency of silicon materials.Be subjected to the restriction of this crucial production unit of monocrystal stove, wish to produce large diameter silicon single crystal rod and be not easy, usually can only produce diameter as 800 type monocrystal stoves is 6.5 inches silicon single crystal rod, and it is 8 inches silicon single crystal rod that 900 type monocrystal stoves can only be produced diameter usually.With regard to single crystal growing furnace, key problem in technology is thermal field system.By improving design, existing monocrystal stove is transformed, make it the charging capacity increase and can produce the bigger silicon single crystal rod of diameter, improve the usefulness of finished product solar cell, improve the silicon materials utilization ratio, reduce unit consumption of energy, enhance productivity, reducing production costs is the target that many monocrystalline silicon chip of solar cell manufacturing enterprise lays siege to.
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art, improving one's methods of a kind of silicon monocrystalline furnace thermal field system proposed, make the charging capacity increase of existing monocrystal stove and can produce the bigger silicon single crystal rod of diameter, thereby improve the usefulness of finished product solar cell, improve the silicon materials utilization ratio, reduce unit consumption of energy, enhance productivity, reduce production costs.
The technical scheme that technical solution problem of the present invention is taked is, improving one's methods of a kind of silicon monocrystalline furnace thermal field system, described thermal field system is positioned at the monocrystal stove furnace chamber, comprises Graphite Electrodes, well heater, crucible, guide shell, heat-preservation cylinder, insulation cover, thermal insulation layer, crucible holder and pressure pin; Described improvement is carried out keeping under the described monocrystal stove furnace cavity structure, comprising:
(1) strengthen the diameter of described heat-preservation cylinder, behind described heat-preservation cylinder arranged outside thermal insulation layer, and leave a gap between described monocrystal stove furnace chamber inwall, the gap is little but do not contact, and makes thermal field system have good heat-insulating property;
(2) diameter of the described well heater of increasing adapts itself and described heat-preservation cylinder;
(3) diameter of the described crucible of increasing and height itself and described well heater are adapted, and the upper surface of described crucible are arranged at below the upper surface of described well heater;
(4) strengthen the diameter and the height of described guide shell, and the lower surface that described guide shell is set is just below the upper surface of described crucible;
(5) correspondingly strengthen described crucible holder diameter and thickness, itself and described crucible are adapted;
(6) correspondingly adjust the size of described pressure pin;
(7) correspondingly adjust described Graphite Electrodes diameter and the height.
As further improvement, it is lagging material that described thermal insulation layer adopts carbon fiber solid felt.
As further improvement, described thermal insulation layer is set to muff, middle muff and following muff.
As further improvement, on described insulation cover, be provided with back-up ring, flow to stop and to reduce the space of shielding gas between the heat-preservation cylinder outside and monocrystal stove furnace chamber inwall.
In the present invention, described guide shell comprises inner draft tube and external flow guiding cylinder, and described heat-preservation cylinder comprises heat-preservation cylinder, middle heat-preservation cylinder and following heat-preservation cylinder, and described insulation cover comprises insulation cover and following insulation cover, and described pressure pin comprises pressure pin axle and pressure pin axle bed.The present invention also comprises pressure pin sheath, electrode sheath, electrode screw and electrode screw cap.
The present invention be directed to the present monocrystal stove that generally uses as 800 type monocrystal stoves and 900 type monocrystal stoves, and the improvement of the thermal field system that carries out design, described improvement design is a target with the silicon single crystal rod that increases charging capacity and energy production larger diameter or length.For realizing above-mentioned target, improve in the design, strengthen the diameter of heat-preservation cylinder and well heater as much as possible, strengthen the diameter of crucible and the diameter and the height of height and guide shell, charging capacity is significantly increased.Strengthen the diameter of described heat-preservation cylinder, behind its arranged outside thermal insulation layer, leave a gap between thermal insulation layer and monocrystal stove furnace chamber inwall, the gap is little but do not contact, and makes thermal field system have good heat-insulating property; The diameter that strengthens well heater adapts itself and heat-preservation cylinder, is exactly big as much as possible, but must leaves the gap; Strengthen the diameter of crucible and itself and well heater are adapted, its diameter should be big as much as possible, but must stop the gap, because crucible will rotate in the production process, its height should be high as much as possible, but the upper surface of crucible should be arranged at below the upper surface of well heater, so that good heating properties is arranged; Correspondingly strengthen crucible holder diameter and thickness, itself and crucible are adapted, mainly consider the factor of load-bearing and the stressed aspect of rotation.Simultaneously, lagging material and the structure thereof that thermal insulation layer adopted improved and optimizated, improve the heat-insulating property of thermal field system; By the flowing property that back-up ring improves shielding gas is set.On this basis, by adjusting production technique, with the silicon single crystal rod of production larger diameter and/or length.As improvement to 800 type silicon monocrystalline furnace thermal field systems, make its charging capacity be increased to 80kg, and the adjustment optimization by production technique by original 60kg, the diameter that makes its fertile silicon single crystal rod is brought up to 8 inches by original 6.5 inches; And, make its charging capacity be increased to 100kg by original 80kg to the improvement of 900 type silicon monocrystalline furnace thermal field systems, and the adjustment optimization by production technique, make the length of its fertile silicon single crystal rod be increased to 170cm by original 130cm.
Enforcement of the present invention can realize that the monocrystal stove charging capacity increases, and silicon single crystal rod enlarged diameter of being produced and/or length increase, thereby improve the usefulness of finished product solar cell, improve the silicon materials utilization ratio, reduce unit consumption of energy, enhance productivity, reduce production costs.
Description of drawings
Fig. 1 is former 800 type silicon monocrystalline furnace thermal field system structural representations.
Fig. 2 adopts the improved a kind of 800 type silicon monocrystalline furnace thermal field system structural representations of the inventive method.
Embodiment
Former 800 type silicon monocrystalline furnace thermal field systems as shown in Figure 1, it comprises well heater 1, crucible 2, inner draft tube 3, external flow guiding cylinder 4, goes up heat-preservation cylinder 5, middle heat-preservation cylinder 6, down heat-preservation cylinder 7, go up insulation cover 9, down insulation cover 10, thermal insulation layer 24, crucible holder 14, pressure pin axle 16 and pressure pin axle bed 15, pressure pin sheath 17, go up compressing tablet 18, lower sheeting 19, Graphite Electrodes 20 and electrode sheath 21, electrode screw 22 and electrode screw cap 23.The size of former 800 type silicon monocrystalline furnace thermal field system major partss is as follows: go up heat-preservation cylinder 5 external diameters and highly be
In heat-preservation cylinder 6 external diameters and highly be
Following heat-preservation cylinder 7 external diameters and highly be
Well heater 1 external diameter and highly be
Crucible 2 external diameters and highly be
Inner draft tube 3 upper-end inner diameter
Outer, upper end diameter
Bottom diameter
The lower end external diameter
Height 279.5mm, external flow guiding cylinder 4 upper-end inner diameter
Outer, upper end diameter
Bottom diameter
The lower end external diameter
Height 295mm, last insulation cover 9 external diameters and thickness are
Following insulation cover 10 external diameters and thickness are
Crucible holder 14 external diameters and highly be
Last compressing tablet 18 external diameters and thickness are
Lower sheeting 19 external diameters and thickness are
Graphite Electrodes 20 external diameters and highly be
Thermal insulation layer 24 is the soft felt of carbon fiber, and winding thickness is 10mm.
To being improved to of 800 type silicon monocrystalline furnace thermal field systems: the diameter that strengthens heat-preservation cylinder, strengthen the diameter of well heater, strengthen the diameter and the height of crucible, strengthen the diameter and the height of guide shell, and correspondingly strengthen crucible holder diameter and thickness, compressing tablet and lower sheeting diameter and adjust its thickness in the increasing, the size of insulation cover and following insulation cover in the adjustment, adjust the size of pressure pin, adjust the diameter and the height of Graphite Electrodes; Thermal insulation layer adopts carbon fiber solid felt to be lagging material and to be set to muff, middle muff and following muff; On insulation cover, be provided with back-up ring.Through improved 800 type silicon monocrystalline furnace thermal field systems as shown in Figure 2, comprise well heater 1, crucible 2, inner draft tube 3, external flow guiding cylinder 4, go up heat-preservation cylinder 5, middle heat-preservation cylinder 6, down heat-preservation cylinder 7, back-up ring 8, go up insulation cover 9, down insulation cover 10, go up muff 11, middle muff 12, down muff 13, crucible holder 14, pressure pin 25, pressure pin sheath 17, go up compressing tablet 18, lower sheeting 19, Graphite Electrodes 20 and electrode sheath 21, electrode screw 22 and electrode screw cap 23.Size through improved 800 type silicon monocrystalline furnace thermal field system major partss is as follows: go up heat-preservation cylinder 5 external diameters and highly be
In heat-preservation cylinder 6 external diameters and highly be
Following heat-preservation cylinder 7 external diameters and highly be
Well heater 1 external diameter and highly be
Crucible 2 external diameters and highly be
Inner draft tube 3 upper-end inner diameter
Outer, upper end diameter
Bottom diameter
The lower end external diameter
Height 349mm, external flow guiding cylinder 4 upper-end inner diameter
Outer, upper end diameter
Bottom diameter
The lower end external diameter
The height 365mm, last insulation cover 9 external diameters with highly be
Following insulation cover 10 external diameters and highly be
Crucible holder 14 external diameters and highly be
Last compressing tablet 18 external diameters and thickness are
Lower sheeting 19 external diameters and thickness are
Graphite Electrodes 20 external diameters and highly be
Back-up ring 8 external diameters and highly be
Last muff 11 external diameters and highly be
In muff 12 external diameters and highly be
Following muff 13 external diameters and highly be
Claims (4)
1. improving one's methods of a silicon monocrystalline furnace thermal field system, described thermal field system is positioned at the monocrystal stove furnace chamber, comprises Graphite Electrodes, well heater, crucible, guide shell, heat-preservation cylinder, insulation cover, thermal insulation layer, crucible holder and pressure pin; It is characterized in that described improvement is carried out keeping under the described monocrystal stove furnace cavity structure, comprising:
(1) strengthen the diameter of described heat-preservation cylinder, behind described heat-preservation cylinder arranged outside thermal insulation layer, leave certain interval between described thermal insulation layer and described monocrystal stove furnace chamber inwall, the gap is little but do not contact, and makes thermal field system have good heat-insulating property;
(2) diameter of the described well heater of increasing adapts itself and described heat-preservation cylinder;
(3) diameter of the described crucible of increasing and height itself and described well heater are adapted, and the upper surface of described crucible are arranged at below the upper surface of described well heater;
(4) strengthen the diameter and the height of described guide shell, and the lower surface that described guide shell is set is just below the upper surface of described crucible;
(5) correspondingly strengthen described crucible holder diameter and thickness, itself and described crucible are adapted;
(6) correspondingly adjust the size of described pressure pin;
(7) correspondingly adjust described Graphite Electrodes diameter and the height.
2. improving one's methods of a kind of silicon monocrystalline furnace thermal field system according to claim 1 is characterized in that, it is lagging material that described thermal insulation layer adopts carbon fiber solid felt.
3. improving one's methods of a kind of silicon monocrystalline furnace thermal field system according to claim 1 and 2 is characterized in that, described thermal insulation layer is set to muff, middle muff and following muff.
4. improving one's methods according to claim 1,2 or 3 described a kind of silicon monocrystalline furnace thermal field systems; it is characterized in that; on described insulation cover, be provided with back-up ring, flow to stop and to reduce the space of shielding gas between the heat-preservation cylinder outside and monocrystal stove furnace chamber inwall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2010101945217A CN101864591B (en) | 2010-06-04 | 2010-06-04 | Improved 800type silicon monocrystalline furnace thermal field system |
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| CN2010101945217A CN101864591B (en) | 2010-06-04 | 2010-06-04 | Improved 800type silicon monocrystalline furnace thermal field system |
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| CN101864591A true CN101864591A (en) | 2010-10-20 |
| CN101864591B CN101864591B (en) | 2012-02-29 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102168300A (en) * | 2011-04-06 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Thermal system for preparing heavily-doped silicon single crystal |
| CN102888651A (en) * | 2011-07-22 | 2013-01-23 | 浙江思博恩新材料科技有限公司 | Crucible cap and crucible system |
| CN104975341A (en) * | 2015-06-24 | 2015-10-14 | 吴倩颖 | Method for increasing batch feeding amount for single crystal pulling |
| US9783912B2 (en) | 2012-10-03 | 2017-10-10 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal growing apparatus and method for growing silicon single crystal |
| CN107794571A (en) * | 2017-10-30 | 2018-03-13 | 扬中市惠丰包装有限公司 | One kind is used for czochralski crystal growing furnace electrode assembly |
| CN112391676A (en) * | 2019-08-13 | 2021-02-23 | 新特能源股份有限公司 | Single crystal furnace thermal field, control method thereof and single crystal furnace |
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| CN2744697Y (en) * | 2004-09-20 | 2005-12-07 | 江苏顺大半导体发展有限公司 | Thermal system device for silicon single crystal furnace |
| CN201305646Y (en) * | 2008-12-05 | 2009-09-09 | 浙江舒奇蒙能源科技有限公司 | Thermal field device of single-crystal silicon growing furnace |
| CN101709505A (en) * | 2009-11-11 | 2010-05-19 | 西安隆基硅材料股份有限公司 | Energy-saving thermal field for growing silicon single crystal |
| CN201485535U (en) * | 2009-08-13 | 2010-05-26 | 合肥景坤新能源有限公司 | Double-heating system monocrystalline silicon growing device |
-
2010
- 2010-06-04 CN CN2010101945217A patent/CN101864591B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2744697Y (en) * | 2004-09-20 | 2005-12-07 | 江苏顺大半导体发展有限公司 | Thermal system device for silicon single crystal furnace |
| CN201305646Y (en) * | 2008-12-05 | 2009-09-09 | 浙江舒奇蒙能源科技有限公司 | Thermal field device of single-crystal silicon growing furnace |
| CN201485535U (en) * | 2009-08-13 | 2010-05-26 | 合肥景坤新能源有限公司 | Double-heating system monocrystalline silicon growing device |
| CN101709505A (en) * | 2009-11-11 | 2010-05-19 | 西安隆基硅材料股份有限公司 | Energy-saving thermal field for growing silicon single crystal |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102168300A (en) * | 2011-04-06 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Thermal system for preparing heavily-doped silicon single crystal |
| CN102888651A (en) * | 2011-07-22 | 2013-01-23 | 浙江思博恩新材料科技有限公司 | Crucible cap and crucible system |
| CN102888651B (en) * | 2011-07-22 | 2015-09-23 | 浙江昱辉阳光能源有限公司 | A kind of crucible cover and crucible system |
| US9783912B2 (en) | 2012-10-03 | 2017-10-10 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal growing apparatus and method for growing silicon single crystal |
| CN104975341A (en) * | 2015-06-24 | 2015-10-14 | 吴倩颖 | Method for increasing batch feeding amount for single crystal pulling |
| CN107794571A (en) * | 2017-10-30 | 2018-03-13 | 扬中市惠丰包装有限公司 | One kind is used for czochralski crystal growing furnace electrode assembly |
| CN112391676A (en) * | 2019-08-13 | 2021-02-23 | 新特能源股份有限公司 | Single crystal furnace thermal field, control method thereof and single crystal furnace |
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| Publication number | Publication date |
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| CN101864591B (en) | 2012-02-29 |
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Owner name: ZHEJIANG SOLAR PHOTOVOLTAIC TECHNOLOGY CO., LTD. Free format text: FORMER NAME: ZHEJIANG SUNOLOGY CO., LTD. |
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Granted publication date: 20120229 Termination date: 20210604 |