CN104975341A - Method for increasing batch feeding amount for single crystal pulling - Google Patents
Method for increasing batch feeding amount for single crystal pulling Download PDFInfo
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- CN104975341A CN104975341A CN201510352065.7A CN201510352065A CN104975341A CN 104975341 A CN104975341 A CN 104975341A CN 201510352065 A CN201510352065 A CN 201510352065A CN 104975341 A CN104975341 A CN 104975341A
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- feeding amount
- single crystal
- batch feeding
- graphite
- crystal pulling
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Abstract
The invention discloses a method for increasing batch feeding amount for single crystal pulling. Height of a graphite trivalvular pot is increased. The method has the advantage that the batch feeding amount for single crystal pulling is increased by improving a graphite part, so that not only is an original single crystal rod pulling device kept, but also the batch feeding amount is increased based on the original, and therefore, use of raw materials is saved, the production steps and the production time are reduced while a production mode of increasing the batch feeding amount is satisfied, and the production efficiency is improved.
Description
Technical field
The present invention relates to a kind of method of solar photovoltaic industry crystal-pulling.
Background technology
During solar photovoltaic industry silicon single crystal rod is produced, maximum charging capacity is generally merely able to drop into 97-100 kilogram of solidification of silicon material according to equipment situation, Deng silicon material completely in quartz crucible melt after, in fact just account for 3/5ths of quartz crucible, and in the stagnant situation of existing photovoltaic industry, only have and can there is profit by cost-saving, therefore be necessary do not affecting existing installation, under not increasing the prerequisite of production cost, every stove is enable to drop into more silicon material, reach and really utilize the space of quartz crucible to draw longer single crystal rod, thus save the cost of every stove drawing.
Summary of the invention
Goal of the invention: for the problems referred to above, the object of this invention is to provide a kind of method that crystal-pulling increase feeds intake, and improves the comprehensive benefit of producing, reduces costs.
Technical scheme: a kind of method that crystal-pulling increase feeds intake, increases the height of graphite three lobe crucible.
Best, the height of described graphite three lobe crucible increases 4%-5%.
Specifically, for the graphite three lobe crucible being highly 365cm, highly 385cm is increased to.
Beneficial effect: compared with prior art, advantage of the present invention increases crystal-pulling charging capacity by improving graphite piece, both the device of original pulling monocrystal rod had been remained, charging capacity is added again on original basis, save raw-material use, the mode of production of satisfied increase charging capacity while, in turn save production stage and time, improve production efficiency.
Embodiment
Below in conjunction with specific embodiment, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
The method that crystal-pulling increase feeds intake, increases the height of graphite three lobe crucible.Best, the height of graphite three lobe crucible increases 4%-5%.
Specifically, for the graphite three lobe crucible being highly 365cm, highly 385cm is increased to.Can ensure that original drawing situation is unaffected like this, most importantly 110 kilograms can be increased to from original 100 kilograms of charging capacitys, and to increase graphite piece height and quartzy height be do not increase original cost, feed intake according to normal like this, every stove can save artificial and auxiliary material expense, and every month can also save a quartz crucible on original cost.
Claims (3)
1. the method that feeds intake of crystal-pulling increase, is characterized in that: increased by the height of graphite three lobe crucible.
2. the method that feeds intake of a kind of crystal-pulling increase according to claim 1, is characterized in that: the height of described graphite three lobe crucible increases 4%-5%.
3. the method that feeds intake of a kind of crystal-pulling increase according to claim 2, is characterized in that: for the graphite three lobe crucible highly for 365cm, be highly increased to 385cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510352065.7A CN104975341A (en) | 2015-06-24 | 2015-06-24 | Method for increasing batch feeding amount for single crystal pulling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510352065.7A CN104975341A (en) | 2015-06-24 | 2015-06-24 | Method for increasing batch feeding amount for single crystal pulling |
Publications (1)
| Publication Number | Publication Date |
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| CN104975341A true CN104975341A (en) | 2015-10-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201510352065.7A Pending CN104975341A (en) | 2015-06-24 | 2015-06-24 | Method for increasing batch feeding amount for single crystal pulling |
Country Status (1)
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| CN (1) | CN104975341A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07257987A (en) * | 1994-03-16 | 1995-10-09 | Sumitomo Sitix Corp | Graphite member for semiconductor single crystal pulling up device and semiconductor single crystal pulling up device |
| EP0875607A1 (en) * | 1996-01-19 | 1998-11-04 | Shin-Etsu Handotai Company, Limited | Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same |
| CN101864591A (en) * | 2010-06-04 | 2010-10-20 | 浙江芯能光伏科技有限公司 | Improving method of silicon monocrystalline furnace thermal field system |
| CN102108545A (en) * | 2009-12-24 | 2011-06-29 | 江苏聚能硅业有限公司 | Thermal field system suitable for large charge amount of 90t furnace |
| CN202643895U (en) * | 2012-05-09 | 2013-01-02 | 江苏聚能硅业有限公司 | Thermal field crucible |
| CN103215632A (en) * | 2013-04-02 | 2013-07-24 | 苏州海铂晶体有限公司 | Method for growing large-size c-orientation sapphire single crystals |
| CN103556232A (en) * | 2013-11-06 | 2014-02-05 | 无锡荣能半导体材料有限公司 | Crucible for heating silicon materials |
| CN203653756U (en) * | 2013-12-29 | 2014-06-18 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon ingot casting crucible charging structure capable of increasing feeding capacity |
-
2015
- 2015-06-24 CN CN201510352065.7A patent/CN104975341A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07257987A (en) * | 1994-03-16 | 1995-10-09 | Sumitomo Sitix Corp | Graphite member for semiconductor single crystal pulling up device and semiconductor single crystal pulling up device |
| EP0875607A1 (en) * | 1996-01-19 | 1998-11-04 | Shin-Etsu Handotai Company, Limited | Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same |
| CN102108545A (en) * | 2009-12-24 | 2011-06-29 | 江苏聚能硅业有限公司 | Thermal field system suitable for large charge amount of 90t furnace |
| CN101864591A (en) * | 2010-06-04 | 2010-10-20 | 浙江芯能光伏科技有限公司 | Improving method of silicon monocrystalline furnace thermal field system |
| CN202643895U (en) * | 2012-05-09 | 2013-01-02 | 江苏聚能硅业有限公司 | Thermal field crucible |
| CN103215632A (en) * | 2013-04-02 | 2013-07-24 | 苏州海铂晶体有限公司 | Method for growing large-size c-orientation sapphire single crystals |
| CN103556232A (en) * | 2013-11-06 | 2014-02-05 | 无锡荣能半导体材料有限公司 | Crucible for heating silicon materials |
| CN203653756U (en) * | 2013-12-29 | 2014-06-18 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon ingot casting crucible charging structure capable of increasing feeding capacity |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151014 |
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| WD01 | Invention patent application deemed withdrawn after publication |