CN105600759A - Method for improving suspension properties of photovoltaic-grade silicon nitride powder by means of grain size distribution - Google Patents
Method for improving suspension properties of photovoltaic-grade silicon nitride powder by means of grain size distribution Download PDFInfo
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- CN105600759A CN105600759A CN201610017071.1A CN201610017071A CN105600759A CN 105600759 A CN105600759 A CN 105600759A CN 201610017071 A CN201610017071 A CN 201610017071A CN 105600759 A CN105600759 A CN 105600759A
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0687—After-treatment, e.g. grinding, purification
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2004/51—Particles with a specific particle size distribution
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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Abstract
The invention belongs to the field of novel materials, and provides a method for improving suspension properties of photovoltaic-grade silicon nitride powder by means of grain size distribution. The method includes 1), mixing two or three types of silicon nitride powder with different grain sizes with one another according to certain proportions to implement grain size distribution; 2), mixing photovoltaic-grade silicon nitride powder obtained by means of grain size distribution with water according to certain proportions to obtain mixtures and stirring the mixtures until the mixtures are uniform so as to obtain silicon nitride turbid liquid with good suspension properties. The method has the advantages that the suspension properties of the photovoltaic-grade silicon nitride powder obtained by means of grain size distribution are obviously improved, the sedimentation mass of the photovoltaic-grade silicon nitride powder is obviously reduced, and the quality of coatings for polycrystalline silicon cast ingots can be greatly improved; the method is easy to implement and effective in implementation, the prepared coatings are good in compactness, the quantity of waste of the polycrystalline silicon ingots can be reduced, the cost can be effectively saved, and the method is applicable to large-scale industrial production.
Description
Technical field
The invention belongs to field of new, more particularly, relate to a kind of grain size distribution and improve the method for photovoltaic grade silicon nitride powder suspension.
Background technology
At present, in the polycrystalline silicon ingot casting production process of photovoltaic industry, silicon material experiences fusing, crystal growth, annealing in silica crucibleCooling, finally cast polycrystal silicon ingot. In raw material fusing, in crystal growing process, silicon melt and silica crucible Long contact time,Can produce stiction. Because silicon is different from the thermal coefficient of expansion of silica, if silicon melt and silica crucible wall are in conjunction with tight,In the time that crystal is cooling, probably cause crystalline silicon or silica crucible to break; Meanwhile, silicon melt and crucible Long contact time, silicon and twoSilica can react, and causes the corrosion of silica crucible, oxygen concentration in polysilicon is raise, and then affects polysilicon chipPerformance. Contact with the direct of silica crucible for fear of silicon melt, solve viscid problem, reduce simultaneously oxygen in polycrystal silicon ingot,Carbon impurity content, generally adopts and utilizes silicon nitride powder as coating in polycrystalline silicon ingot casting production process, for the powder of silicon nitride coatingBody is called photovoltaic grade silicon nitride powder by industry.
But along with further developing of polycrystalline silicon ingot casting technology in photovoltaic industry, the quantitative change of silica crucible filler is large, and the high temperature melt time is elongated,More and more higher to silicon nitride coating quality requirement, suspension and the coating quality of silicon nitride powder are closely bound up, suspension bad just withoutMethod meets the harsh requirement of polycrystalline silicon ingot casting to coating quality, can cause aborning the quality problems such as sticky powder, sticky pot. Therefore,How to improve the suspension of photovoltaic grade silicon nitride powder, thereby meet the requirement of polycrystalline silicon ingot casting coating, be this area scientific research personnel urgentlyNeed the technical problem solving.
Summary of the invention
Present invention is directed at the bad problem of photovoltaic grade beta-silicon nitride powder suspension, propose one and improve photovoltaic grade nitrogen by grain size distributionThe method of SiClx powder suspension, thereby the suspension of raising photovoltaic grade silicon nitride powder, and then the quality of raising silicon nitride coating.In order to achieve the above object, the invention provides following technical scheme:
Grain size distribution improves a method for photovoltaic grade silicon nitride powder suspension, comprising:
1) by varigrained photovoltaic grade silicon nitride powder two or three, mix according to a certain percentage to realize grain size distribution;
2) the photovoltaic grade silicon nitride powder and the water that grain size distribution are obtained, mix by a certain percentage, is stirred to evenly, obtains suspension goodSilicon nitride suspension.
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, and the purity of described photovoltaic grade silicon nitride powder is(99～100)％。
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, the different grains of described photovoltaic grade silicon nitride powderDegree is respectively D50 (0.5～1.8), D50 (1.8～2.6), D50 (2.6～4.0).
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, and the α of described photovoltaic grade silicon nitride powder contains mutuallyAmount is (10～100) %.
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, and the ratio of two kinds of powder proportionings is (1～9):1。
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, the ratio of described three kinds of powder proportionings be (1～9)∶(1～9)∶1。
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, and described powder is mixed into and is dry mixed or wet mixing.
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, and described water is deionized water or ultra-pure water.
Preferably, above-mentioned grain size distribution improves in the method for photovoltaic grade silicon nitride powder suspension, and the ratio that described powder mixes with water is 1:(1～5)。
Detailed description of the invention
Below in conjunction with embodiment, the specific embodiment of the present invention is described further.
Embodiment 1
Improve a method for beta-silicon nitride powder suspension by grain size distribution, its method is as follows:
1) by D501.0, D502.0, tri-kinds of varigrained silicon nitride powders of D503.0, mix according to the ratio of 5: 3: 2, comeRealize grain size distribution;
2) photovoltaic grade silicon nitride powder grain size distribution being obtained takes 10g, adds 40ml ultra-pure water, mixes in the ratio of 1: 4, stirsTo evenly, obtain the silicon nitride suspension that suspension is good. Leave standstill after 20min, suspension sinking speed slows down, deposition quality ratioDrop to 6.8% by 26%.
Embodiment 2
Improve a method for beta-silicon nitride powder suspension by grain size distribution, its method is as follows:
1) by D501.0, D502.0, tri-kinds of varigrained silicon nitride powders of D503.0, mix according to the ratio of 2: 2: 1, comeRealize grain size distribution;
2) photovoltaic grade silicon nitride powder grain size distribution being obtained takes 10g, adds 40ml ultra-pure water, mixes in the ratio of 1: 4, stirsTo evenly, obtain the silicon nitride suspension that suspension is good. Leave standstill after 20min, suspension sinking speed slows down, deposition quality ratioDrop to 7.6% by 26%.
Embodiment 3
Improve a method for beta-silicon nitride powder suspension by grain size distribution, its method is as follows:
1), by D501.0, two kinds of varigrained silicon nitride powders of D503.0, mix according to the ratio of 5: 3, realize granularityGrating;
2) photovoltaic grade silicon nitride powder grain size distribution being obtained takes 10g, adds 40ml ultra-pure water, mixes in the ratio of 1: 4, stirsTo evenly, obtain the silicon nitride suspension that suspension is good. Leave standstill after 20min, suspension sinking speed slows down, deposition quality ratioDrop to 8.2% by 26%.
Embodiment 4
Improve a method for beta-silicon nitride powder suspension by grain size distribution, its method is as follows:
1), by D501.0, two kinds of varigrained silicon nitride powders of D503.0, mix according to the ratio of 7: 3, realize granularityGrating;
2) photovoltaic grade silicon nitride powder grain size distribution being obtained takes 10g, adds 40ml ultra-pure water, mixes in the ratio of 1: 4, stirsTo evenly, obtain the silicon nitride suspension that suspension is good. Leave standstill after 20min, suspension sinking speed slows down, deposition quality ratioDrop to 7.8% by 26%.
To the disclosed embodiments in above-mentioned explanation, be in order to make those skilled in the art can realize or use the present invention. Obviously,Stating described embodiment is only the present invention's part fact Example, instead of whole embodiment. To those skilled in the art, it will be easy to do that above-mentioned these embodiment are made to multiple amendment more, General Principle as defined herein can beDo not depart from the situation of the spirit or scope of the present invention, realize in other embodiments. Therefore, the present invention will can not be restricted toThese embodiment shown in this article, but to meet the widest scope consistent with principle disclosed herein and features of novelty.Based on embodiments of the invention, those skilled in the art are not making the every other enforcement obtaining under creative work prerequisiteExample, all belongs to the scope of protection of the invention.
Claims (10)
1. grain size distribution improves a method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, comprising: 1) by varigrainedIn beta-silicon nitride powder two or three, mix according to a certain percentage to realize grain size distribution; 2) light grain size distribution being obtainedVolt level silicon nitride powder and water, mix by a certain percentage, is stirred to evenly, obtains the silicon nitride suspension that suspension is good.
2. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inThe purity of photovoltaic grade silicon nitride powder is (99～100) %.
3. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inThe different grain size of photovoltaic grade silicon nitride powder is respectively D50 (0.5～1.8), D50 (1.8～2.6), D50 (2.6～4.0).
4. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inThe α phase content of photovoltaic grade beta-silicon nitride powder is (10～100) %.
5. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inThe ratio of two kinds of powder proportionings is (1～9): 1.
6. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inThe ratio of three kinds of powder proportionings is (1～9): (1～9): 1.
7. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inPowder is mixed into and is dry mixed or wet mixing.
8. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inWater is deionized water or ultra-pure water.
9. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that, described inThe ratio that powder mixes with water is 1: (1～5).
10. grain size distribution according to claim 1 improves in the method for photovoltaic grade silicon nitride powder suspension, it is characterized in that instituteThe grain size distribution of stating is not only confined to the improvement of photovoltaic grade silicon nitride powder suspension, is equally applicable to the improvement of other powder suspensions.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108519266A (en) * | 2018-04-16 | 2018-09-11 | 江苏美科硅能源有限公司 | A kind of stage division of the efficient silicon ingot of fine melt |
| CN115745641A (en) * | 2022-11-16 | 2023-03-07 | 航天特种材料及工艺技术研究所 | Preparation method of inorganic coating on surface of quartz fiber/quartz composite material |
-
2016
- 2016-01-12 CN CN201610017071.1A patent/CN105600759A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108519266A (en) * | 2018-04-16 | 2018-09-11 | 江苏美科硅能源有限公司 | A kind of stage division of the efficient silicon ingot of fine melt |
| CN115745641A (en) * | 2022-11-16 | 2023-03-07 | 航天特种材料及工艺技术研究所 | Preparation method of inorganic coating on surface of quartz fiber/quartz composite material |
| CN115745641B (en) * | 2022-11-16 | 2024-02-13 | 航天特种材料及工艺技术研究所 | Preparation method of inorganic coating on surface of quartz fiber/quartz composite material |
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Application publication date: 20160525 |