CN203653741U - Flow guide cylinder structure for magnetic field single crystal furnace - Google Patents
Flow guide cylinder structure for magnetic field single crystal furnace Download PDFInfo
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- CN203653741U CN203653741U CN201320535662.XU CN201320535662U CN203653741U CN 203653741 U CN203653741 U CN 203653741U CN 201320535662 U CN201320535662 U CN 201320535662U CN 203653741 U CN203653741 U CN 203653741U
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- flow guide
- guide cylinder
- guide shell
- wall
- crystal
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Abstract
The utility model discloses a flow guide cylinder structure for a magnetic field single crystal furnace. The technical scheme of the flow guide cylinder structure is as follows: the structure comprises a heat insulation cover and a flow guide cylinder body, wherein the flow guide cylinder body is a cylindrical structure which is transparent from top to bottom, particularly, the side wall of the flow guide cylinder body consists of an upper heat insulation wall and a lower heat insulation wall which are connected with each other; the thickness of the upper heat insulation wall is equal, and the thickness of the lower heat insulation wall is gradually increased from top to bottom. According to the flow guide cylinder structure disclosed by the utility model, the upper space of a melt in a crucible is compressed by the gradually-thickened lower end of the flow guide cylinder, on one hand, the separation distances between the flow guide cylinder and a quartz crucible as well as between the flow guide cylinder and the liquid level are shortened to ensure that more heat energy can be maintained in molten silicone, and on the other hand, most of the heat radiated to a crystal bar can be shielded; because the crystal bar mainly performs thermal conduction during growing, the gradient difference between the crystal bar and the edge of the melt is increased to achieve the aim of improving the radial temperature gradient of the liquid level of the molten silicon. The flow guide cylinder structure disclosed by the utility model has the beneficial effects that the radial temperature gradient of the front edge of a crystal is effectively improved, and the electrical performance parameters and the success rate of process control of the crystal are improved.
Description
Technical field
The utility model relates to a kind of guide shell structure for magnetic field single crystal growing furnace produce single crystal, belongs to technical field of semiconductor.
Background technology
Use existing pulling crystal using direct pulling technology to manufacture the vertical pulling stove of monocrystalline, in the time of pulling monocrystal, in stove, have two kinds to streamed, i.e. natural convection and forced convection.Natural convection is to be caused by thermograde and gravity factor, and the crystalline substance that forced convection is set during by crystal pulling turns, crucible turns and the viscosity of melt causes.Generally, forced convection is relatively stable in crystal pulling; Ideally, natural convection and forced convection are trend stable relations (criticality).But in practical situation, the meeting that affects of natural convection is strengthened gradually, destroys this desirable criticality, cause the temperature oscillation of crystal growth liquid level, cause impurity solidifying at the differential of crystal interface, cause the optical property of crystal, the ununiformity of electrical properties.Outside during Cz method (crystal pulling) growing crystal, applying the thermal convection of magnetic field inhibition melt is comparatively to commonly use at present one of measure with relative efficiency, the crystal electric parameters defect causing due to natural convection effectively can be controlled by this measure, but drawback is thereupon, the reduction of natural convection causes the thermograde in crystallization forward position too small, the frequent unwillingly local-crystalized phenomenon that occurs, has a strong impact on normal crystal growth control technique.
Utility model content
The purpose of this utility model is the drawback for prior art, and a kind of guide shell structure for magnetic field single crystal growing furnace is provided, and utilizes this guide shell structure can effectively improve the radial symmetry gradient of fusion silicon liquid level, improves crystal growth technique and is controlled to power.
Problem described in the utility model realizes with following technical proposals:
A kind of guide shell structure for magnetic field single crystal growing furnace, it comprises insulation cover and guide shell body, described guide shell body is upper and lower penetrating tubular structure, special feature is, described guide shell body sidewall is made up of interconnective upper thermal wall and lower thermal wall, described upper thermal wall is to wait wall thickness, and described lower thermal wall from top to bottom wall thickness increases progressively.
The above-mentioned guide shell structure for magnetic field single crystal growing furnace, the inwall of described guide shell body is the descending alternation of diameter from top to bottom, and the angle of guide shell inner body wall is that α is 60-80 °, and the outer wall of described lower thermal wall is for straight down.
The above-mentioned guide shell structure for magnetic field single crystal growing furnace, described upper thermal wall wall thickness is 4-8 millimeter, and described upper thermal wall height H 1 is 60-100 millimeter, and lower thermal wall height H 2 is 150-250 millimeter.
The above-mentioned guide shell structure for magnetic field single crystal growing furnace, described upper thermal wall top is provided with inboardend, and inboardend is ring-type, and inboardend top and insulation cover are fixed, and inboardend maximum outside diameter is greater than insulation cover internal diameter 3-5mm.
The utility model is for solving unwillingly local-crystalized probability of inhibition in pulling monocrystal production process, improve crystal growth control success ratio problem, existing guide shell structure is improved, utilization go forward one by one thickening guide shell lower end, melt upper space in compression crucible, make on the one hand the spacing between guide shell and quartz crucible, liquid level dwindle, heat more can be maintained in molten silicon; On the other hand, the shielding overwhelming majority goes to be mapped to the heats of crystal bar, due to during boule growth mainly taking heat loss through conduction as main, therefore increase the gradient difference at crystal bar and melt edge, and then reach the object of improving fusion silicon liquid level radial symmetry gradient.Employing the beneficial effects of the utility model are: effectively improved the radial symmetry gradient in crystallization forward position, improved electric parameters and the technology controlling and process success ratio of crystal.
Brief description of the drawings
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Fig. 1 is structural representation of the present utility model.
In figure, each list of reference numerals is: 1, insulation cover, 2, inboardend, 3, guide shell body, 3-1, upper thermal wall, 3-2, lower thermal wall, 4, well heater, 5, quartz pot, 6, silicon single-crystal.
Embodiment
Referring to Fig. 1, the utility model comprises insulation cover 1 and guide shell body 3, and guide shell body plays the effect of high-temperature gas water conservancy diversion.The position of guide shell body in single crystal growing furnace be as shown in the figure: guide shell body 3 lower end probe in quartz pot 5, and quartz pot circumferential distribution well heater 4, is the molten silicon of liquid in quartz pot, between silicon single-crystal 6 and guide shell, passes into argon gas.Improvement main points of the present utility model are embodied in the texture improvement of guide shell body.Guide shell body is upper and lower penetrating tubular structure, and the sidewall of guide shell body 3 is made up of interconnective upper thermal wall 3-1 and lower thermal wall 3-2, and wherein, upper thermal wall is for waiting wall thickness, and lower thermal wall from top to bottom wall thickness increases progressively.The inwall of guide shell body 3 is the descending alternation of diameter from top to bottom, and the outer wall of lower thermal wall is for straight down, descending the wall thickness dimension of thermal wall is maximum in guide shell bottom.The geometrical dimension of guide shell body is as follows: the angle of guide shell inner body wall is that α is 60-80 °, and the wall thickness of upper thermal wall 3-1 is 4-8 millimeter, and upper thermal wall height H 1 is 60-100 millimeter, and lower thermal wall height H 2 is 150-250 millimeter.Upper thermal wall top is provided with inboardend 2, and inboardend is ring-type, and inboardend top and insulation cover 1 are fixing, and inboardend maximum outside diameter is greater than insulation cover internal diameter 3-5mm.
The utility model improves wall thickness structures such as common guide shells, utilizes the guide shell lower end of thickening, and melt upper space in compression quartz pot makes the spacing between guide shell and quartz crucible, liquid level dwindle on the one hand, and heat more can be maintained in molten silicon; On the other hand, the shielding overwhelming majority goes to be mapped to the heats of crystal bar, due to during boule growth mainly taking heat loss through conduction as main, therefore increase the gradient difference at crystal bar and melt edge, and then reach the object of improving fusion silicon liquid level radial symmetry gradient.
Claims (2)
1. the guide shell structure for magnetic field single crystal growing furnace, it comprises insulation cover (1) and guide shell body (3), described guide shell body is upper and lower penetrating tubular structure, it is characterized in that, described guide shell body sidewall is made up of interconnective upper thermal wall (3-1) and lower thermal wall (3-2), described upper thermal wall is to wait wall thickness, and described lower thermal wall from top to bottom wall thickness increases progressively;
The inwall of described guide shell body (3) is the descending alternation of diameter from top to bottom, and the angle of guide shell inner body wall is that α is 60-80 °, and the outer wall of described lower thermal wall is for straight down;
Described upper thermal wall wall thickness is 4-8 millimeter, and described upper thermal wall height H 1 is 60-100 millimeter, and lower thermal wall height H 2 is 150-250 millimeter.
2. the guide shell structure for magnetic field single crystal growing furnace according to claim 1, it is characterized in that, described upper thermal wall top is provided with inboardend (2), and inboardend is ring-type, inboardend top and insulation cover (1) are fixing, and inboardend maximum outside diameter is greater than insulation cover internal diameter 3-5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320535662.XU CN203653741U (en) | 2013-08-30 | 2013-08-30 | Flow guide cylinder structure for magnetic field single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320535662.XU CN203653741U (en) | 2013-08-30 | 2013-08-30 | Flow guide cylinder structure for magnetic field single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203653741U true CN203653741U (en) | 2014-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320535662.XU Expired - Fee Related CN203653741U (en) | 2013-08-30 | 2013-08-30 | Flow guide cylinder structure for magnetic field single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203653741U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112680793A (en) * | 2019-10-17 | 2021-04-20 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
-
2013
- 2013-08-30 CN CN201320535662.XU patent/CN203653741U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112680793A (en) * | 2019-10-17 | 2021-04-20 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170912 Address after: 055550 Ningjin County, Hebei Province, crystal street, No. 279, Patentee after: Ningjin Songgong Electronic Material Co., Ltd. Address before: 055550 Ningjin County, Hebei Province, crystal street, No. 267, Patentee before: Ningjin Saimei Ganglong Electronic Material Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140618 Termination date: 20180830 |
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| CF01 | Termination of patent right due to non-payment of annual fee |