CN203583004U - Sectional type suspended heat shield - Google Patents
Sectional type suspended heat shield Download PDFInfo
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- CN203583004U CN203583004U CN201320668497.5U CN201320668497U CN203583004U CN 203583004 U CN203583004 U CN 203583004U CN 201320668497 U CN201320668497 U CN 201320668497U CN 203583004 U CN203583004 U CN 203583004U
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- heat shielding
- heat shield
- upper heat
- lower heat
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Abstract
The utility model discloses a sectional type suspended heat shield which is applicable to the technical field of Czochralski silicon single crystal production and particularly applicable to the production of circuit-level silicon single crystals. The sectional type suspended heat shield is composed of an upper heat shield consisting of an upper heat shield inner layer (1) and an upper heat shield outer layer (2), a lower heat shield consisting of a lower heat shield outer layer (5) and a lower heat shield inner layer (6), a molybdenum hook (3) and a fixing screw (4). By adopting the inner-outer layer combined structure design of the upper heat shield and lower heat shield forming the heat shield and filling the interlayer gap with a thermal insulation material, the thermal insulation property of the suspended heat shield is sufficiently guaranteed, the temperature gradient of the upper heat field of a quartz crucible is increased, the problem of volatile matter accumulation caused by supercooling of the outer part of the heat shield in single crystal drawing is avoided, the crystal drawing speed is increased, the crystal drawing time is reduced, and the production efficiency is improved.
Description
Technical field
The utility model belongs to crystal for straight drawing monocrystal production technical field, relates generally to a kind of sectional type and hangs heat shielding, for circuit level pulling single crystal silicon.
Background technology
In recent years, be accompanied by the favor of people to clean energy, in photovoltaic industry, the demand of solar monocrystalline silicon product is surged at home.For meeting market supply, improve crystal pulling efficiency and reduce energy consumption, and for crystal pulling process provides enough thermograde and crystal pulling speeies, starting closed thermal field concept to apply in the production of solar monocrystalline silicon.In the thermal field on single crystal growing furnace quartz crucible top, install and hang an integrated heat-shielding, although hang this integrated heat-shielding, can play the effect that improves crystal pulling efficiency and reduce energy consumption, in use also have some problems: 1, limited the charge amount of polycrystalline silicon raw material in crucible; 2, quartz crucible need be down to very low crucible position during material, easily cause Lou silicon accident; 3, the polysilicon on quartz crucible top is easily encountered the end opening of heat shielding, causes polysilicon to pollute single crystal silicon product carbon content is exceeded standard.For addressing the above problem, in production, integrated heat-shielding used has been done to the improvement that increases lifting gear.For the heat shield for single crystal furnace that there is no room for promotion, adopt the segmentation structure that heat shielding is designed to upper and lower two sections, epimere heat shielding adopts single layer designs, in hypomere heat shielding, hook is housed, and during use, lower heat shielding is mentioned.These improvement projects have solved some problems of using heat shielding to exist in solar energy single crystal preparation process, but the circuit level single crystal silicon product of having relatively high expectations for product quality indicator is produced, because the epimere heat shielding of composition heat shielding designs for single layer structure, there will be because the epimere heat shielding insulation on top cannot provide not enough thermogrades and improve crystal pulling speed, very easily produce swirl defect.In addition, if the product of circuit level silicon single crystal heavy doping agent specification, the volatile matter producing in crystal pulling process is more, the epimere heat shielding heat insulation effect of single layer designs structure is poor, be easy to gather volatile matter in epimere heat shielding outside, in crystal crystal pulling process, volatile matter falls into and can destroy crystalline structure in quartz crucible and can not Cheng Jing.
Utility model content
In view of existing problem in prior art, the utility model designs and discloses a kind of sectional type and hangs heat shielding, employing, cannot make not cannot provide while drawing circuit level single crystal silicon product enough thermogrades and improves crystal pulling speed and easily produce the problems such as swirl defect because of the insulation of heat shielding to solve by the structure design of inside and outside two-layer formation, the way of middle fill insulant material upper heat shielding and lower heat shielding.In order to realize foregoing invention object, the concrete technical scheme that the utility model adopts is: a kind of sectional type hangs heat shielding, mainly upper heat shielding internal layer and the outer upper heat shielding forming of upper heat shielding, lower heat shielding internal layer and the outer lower heat shielding forming of lower heat shielding, molybdenum hook, retaining screw, consists of; Wherein, upper heat shielding and lower heat shielding adopt high-purity isostatic pressing formed graphite materials processing to manufacture, and the gap between upper heat shielding internal layer and the upper heat shielding skin of upper heat shielding is 10mm, and the outer field top design of lower heat shielding has molybdenum hook, adopt the retaining screw of Mo processing to fix; Described a kind of sectional type hangs heat shielding, wherein goes up heat shielding bottom and is provided with inner convex platform, and lower heat shielding top is provided with outer lug boss; Described a kind of sectional type hangs heat shielding, wherein goes up between the upper heat shielding internal layer and upper heat shielding skin of heat shielding, is filled with the lagging materials such as high-purity carbon felt or expandable graphite between the lower heat shielding internal layer of lower heat shielding and lower heat shielding skin.
A kind of circuit segments formula described in the utility model hangs heat shielding, upper heat shielding and lower heat shielding adopt inside and outside two-layer integrated structure design, interlayer intermediate space adopts filled thermal insulation materials, fully guaranteed to hang the heat-insulating property of heat shielding, improved the thermograde of quartz crucible top thermal field, avoided in crystal-pulling process that heat shielding is outside excessively cold, volatile matter gathers, the situation that affects crystal-pulling occurs, thereby raising pulling rate, reduces the crystal pulling time, enhances productivity.The utility model is practical, and the single crystal growing furnace of various models all can use, and can increase the charge amount of silicon raw material, also can solve because of the secondary crystal that low crucible position material occurs, the generation problem that silicon accident is leaked in generation.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In figure: 1, upper heat shielding internal layer; 2, upper heat shielding skin; 3, molybdenum hook; 4, retaining screw; 5, lower heat shielding skin; 6, lower heat shielding internal layer; 7, inner convex platform; 8, outer lug boss; 9, lagging material.
Embodiment
Below in conjunction with accompanying drawing, provide embodiment of the present utility model as follows:
As shown in Figure 1, a kind of sectional type described in the utility model hang heat shielding mainly by upper heat shielding internal layer 1, the outer 2 upper heat shieldings that forms of upper heat shielding, the lower heat shielding, the molybdenum that by lower heat shielding outer 5 and lower heat shielding internal layer 6, are formed link up with 3, retaining screw 4 forms; Upper heat shielding and lower heat shielding all adopt high-purity isostatic pressing formed graphite materials processing to manufacture; Between upper heat shielding internal layer 1 and upper heat shielding skin 2, lamellar spacing is 10mm, is filled with the lagging materials 9 such as high-purity carbon felt or expandable graphite in lamellar spacing; The top design of lower heat shielding skin 5 has molybdenum hook 3, adopts the retaining screw 4 of Mo processing fixing, and lower heat shielding internal layer 6 and lower heat shielding are filled with the lagging materials 9 such as high-purity carbon felt or expandable graphite in outer 5 lamellar spacings; The outer lug boss 8 that the inner convex platform 7 that upper heat shielding bottom is provided with can be provided with lower heat shielding top cooperatively interacts upper heat shielding and lower heat shielding is fit together.
A kind of circuit segments formula described in the utility model hangs heat shielding in use, first upper heat shielding internal layer 1 and upper heat shielding skin 2 are assembled into upper heat shielding, layer intermediate gap fill insulant material 9, lower heat shielding internal layer 6 and lower heat shielding skin 5 are assembled into lower heat shielding, layer intermediate gap fill insulant material 9, the retaining screw 4 of manufacturing with Mo is fixed on molybdenum hook 3 on the top of lower heat shielding skin 5, and upper heat shielding and lower heat shielding are combined into heat shielding mutually by inner convex platform 7 and outer lug boss 8.When filling with substance is sling lower heat shielding with heavy bell, and making has larger former space to pack more silicon raw material in stove.During material, quartz crucible can be risen, adopt the mode of high crucible position material, the secondary crystal of avoiding low crucible position material to occur, upper heat shielding and lower heat shielding adopt two-layer combination, fill insulant material 9 in lamellar spacing, fully guarantee the heat-insulating property of heat shielding, improved the thermograde of thermal field, can meet the technical qualification requirement of the production of circuit level silicon single crystal.
Claims (3)
1. sectional type hangs a heat shielding, it is characterized in that: described a kind of sectional type hangs upper heat shielding, the lower heat shielding being comprised of lower heat shielding skin (5) and lower heat shielding internal layer (6), molybdenum hook (3), retaining screw (4) formation that heat shielding is mainly comprised of upper heat shielding internal layer (1) and upper heat shielding skin (2); Wherein going up heat shielding and lower heat shielding adopts high-purity isostatic pressing formed graphite materials processing to manufacture, lamellar spacing between upper heat shielding internal layer (1) and the upper heat shielding skin (2) of upper heat shielding is 10mm, the top design of lower heat shielding skin (5) has molybdenum hook (3), adopts the retaining screw (4) of Mo processing fixing.
2. a kind of sectional type according to claim 1 hangs heat shielding, it is characterized in that: upper heat shielding bottom is provided with inner convex platform (7), and lower heat shielding top is provided with outer lug boss (8).
3. a kind of sectional type according to claim 1 hangs heat shielding, it is characterized in that: between the upper heat shielding internal layer (1) and upper heat shielding skin (2) lamellar spacing of upper heat shielding, between the lower heat shielding internal layer (6) of lower heat shielding and lower heat shielding skin (5) lamellar spacing, be filled with the lagging materials (9) such as high-purity carbon felt or expandable graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320668497.5U CN203583004U (en) | 2013-10-29 | 2013-10-29 | Sectional type suspended heat shield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320668497.5U CN203583004U (en) | 2013-10-29 | 2013-10-29 | Sectional type suspended heat shield |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203583004U true CN203583004U (en) | 2014-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320668497.5U Expired - Fee Related CN203583004U (en) | 2013-10-29 | 2013-10-29 | Sectional type suspended heat shield |
Country Status (1)
| Country | Link |
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| CN (1) | CN203583004U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328485B (en) * | 2014-11-17 | 2017-01-04 | 天津市环欧半导体材料技术有限公司 | Guide cylinder for improving growth speed of czochralski silicon single crystal |
| CN107523869A (en) * | 2017-09-21 | 2017-12-29 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace can lift water cooling heat shield arrangement |
| CN109355698A (en) * | 2018-12-13 | 2019-02-19 | 湖南金博碳素股份有限公司 | The adjusting method and guide shell external screen and guide shell of single crystal growing furnace guide shell external screen height |
| WO2023280024A1 (en) * | 2021-07-06 | 2023-01-12 | 隆基绿能科技股份有限公司 | Heat shield outer container, heat shield, and crystal pulling thermal field |
-
2013
- 2013-10-29 CN CN201320668497.5U patent/CN203583004U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328485B (en) * | 2014-11-17 | 2017-01-04 | 天津市环欧半导体材料技术有限公司 | Guide cylinder for improving growth speed of czochralski silicon single crystal |
| CN107523869A (en) * | 2017-09-21 | 2017-12-29 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace can lift water cooling heat shield arrangement |
| CN107523869B (en) * | 2017-09-21 | 2024-03-05 | 浙江晶盛机电股份有限公司 | Single crystal furnace device capable of lifting water-cooling heat shield |
| CN109355698A (en) * | 2018-12-13 | 2019-02-19 | 湖南金博碳素股份有限公司 | The adjusting method and guide shell external screen and guide shell of single crystal growing furnace guide shell external screen height |
| CN109355698B (en) * | 2018-12-13 | 2023-12-22 | 湖南金博碳素股份有限公司 | Method for adjusting height of outer screen of guide cylinder for single crystal furnace |
| WO2023280024A1 (en) * | 2021-07-06 | 2023-01-12 | 隆基绿能科技股份有限公司 | Heat shield outer container, heat shield, and crystal pulling thermal field |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140507 Termination date: 20161029 |