CN102808214B - Combined-type protection plate for ingot casting crucible - Google Patents
Combined-type protection plate for ingot casting crucible Download PDFInfo
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- CN102808214B CN102808214B CN201210312319.9A CN201210312319A CN102808214B CN 102808214 B CN102808214 B CN 102808214B CN 201210312319 A CN201210312319 A CN 201210312319A CN 102808214 B CN102808214 B CN 102808214B
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- ingot casting
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Abstract
The invention relates to a combined-type protection plate for an ingot casting crucible. The combined-type protection plate comprises a side plate and a bottom plate. The side plate is divided into an upper half part and a lower half part, wherein the upper half part is made of graphite and the lower half part is made of a heat insulation material. The bottom plate can be divided into a ring edge part and a middle part, wherein the ring edge part is made of graphite and the middle part is made of a material with good heat conducting performance. By using the combined-type protection plate for the ingot casting crucible, the lateral heat transfer coefficient of the crucible can be effectively reduced, the heat transfer coefficient of the vertical direction of the crucible is improved, the generation of corner polycrystals is inhibited and the yield rate of cast ingots is improved.
Description
Technical field
The present invention relates to a kind of combined type backplate for ingot casting crucible.
Background technology
Current crystal silicon solar energy battery is in occupation of the dominant position of photovoltaic industry.And the cost of silicon chip has accounted for the over half of list/polycrystalline silicon cost, therefore reduce the cost of silicon chip, improve the quality of silicon chip, the development for photovoltaic industry has extremely important meaning.
In conventional polysilicon, the random orientation of crystal grain makes it be difficult to carry out decorative pattern to obtained wafer surface.Decorative pattern is used for improving battery efficiency by reducing luminous reflectance with the absorption improved through battery surface luminous energy.In addition, between polysilicon grain border (crystal boundary) upper " kinking " formed tend to bunch or dislocation line form become the core of textural defect, the quick compound of current carrier in the battery that the gettering effect of these dislocations and dislocation can cause polysilicon to make, thus cause battery efficiency to reduce.Casting single crystal silicon technology is a kind of novel single crystal growing mode, and this method adopts the equipment similar with polycrystalline ingot furnace to carry out the growth of silicon single crystal.The basic craft course of casting monocrystalline silicon is square ingot silicon melt Slow cooling from bottom quartz crucible being grown into a monocrystalline, and maximum different of casting single crystal silicon technology and conventional multi-crystalline silicon casting ingot process are that casting single crystal silicon technology needs to arrange one deck seed crystal bottom quartz crucible, this technology had both had the advantage of the low defect of single crystal silicon material, high conversion efficiency, had again the advantage of ingot casting technology high yield, less energy-consumption, low photo attenuation.Briefly, this technology is exactly the cost with polysilicon, the technology of manufacture order crystal silicon.By ingot single crystal silicon technology, polycrystalline ingot furnace can be made to produce accurate monocrystalline close to pulling of silicon single crystal.Under the prerequisite of not obvious increase silicon chip cost, battery efficiency is made to improve more than 1%.
Cast accurate single crystal technology first seed crystal, silicon material doped element is placed in crucible, and seed crystal is generally positioned at crucible bottom.Heating and melting silicon material subsequently, and keep seed crystal not melted away completely.Finally control cooling, regulate the thermograde of solid liquid phase, guarantee that monocrystalline grows from seed crystal position.The difficult point of this technology is to guarantee to melt the silicon material stage at second step, and seed crystal is not melted completely, controls the distribution of thermograde in addition well, and this is the key improving crystalline growth velocity and crystal mass.Although cast accurate single crystal technology obtained industrialization production, still have problems at present, namely the yield of ingot casting is lower at present, only has large between 40% ~ 60%, mainly because the generation of ingot casting corner polycrystalline has had a strong impact on the utilization ratio of ingot casting.The formation of corner polycrystalline is mainly heated relevant with fixation side, causes creating side thermograde, and the existence of side thermograde causes position, crucible corner to produce polycrystalline, if can form upwards thermograde in side, then can suppress side nucleation, form full monocrystalline.Therefore how to reduce the Heat transfer coefficient of crucible side, or increase the Heat transfer coefficient of crucible vertical direction, reduce the ratio of side Heat transfer coefficient and vertical direction Heat transfer coefficient, improve the yield of ingot casting, become a problem needing to solve.
Summary of the invention
To make crucible inside there is larger side surface temperature gradient to cause the problem that ingot casting yield is lower because effect of heat insulation is bad, the invention provides a kind of combined type backplate for ingot casting crucible for overcoming traditional crucible guard boards.
Technical scheme of the present invention is as follows:
For a combined type backplate for ingot casting crucible, comprise side plate and base plate, it is characterized in that: described side plate divides upper and lower two portions, and upper part is made up of graphite, and lower part is made up of lagging material.
Preferably, upper part is the same with the thickness of lower part, so that manufacture.
Another preferred embodiment, the thickness of lower part can increase from top to bottom gradually, to obtain better thermograde.
Preferably, lagging material can select any one in zinc oxide, zirconium white or silicon carbide.These material heat-proof qualities above-mentioned are good, and high temperatures is good.
The height of lower part of side plate is the same with the height of ingot casting, to reach good effect of heat insulation.
The further improved procedure of the present invention also comprises the improvement of the base plate of the combined type backplate to ingot casting crucible, and base plate comprises ring-shaped edge part and middle portion, and annular rim portion is divided into graphite to make, and middle portion is made up of the material of thermal conductivity higher than graphite.
Preferably, the middle portion of base plate is made up of tungsten or molybdenum.
Preferably, the shape of base plate is square, and the middle portion of base plate is also square, facts have proved: foursquare base plate use properties is best.
Preferably, the cross section of the middle portion of base plate can hold the cross section of ingot casting, to reach preferably radiating effect.
Further, a kind of combined type backplate for ingot casting crucible, comprise base plate, base plate comprises ring-shaped edge part and middle portion, and annular rim portion is divided into graphite to make, and middle portion is made up of the material of thermal conductivity higher than graphite.Also comprise base, described base comprises planar section, and upper planar section is identical with the manufactured materials of the middle portion of base plate, and the upper planar section of base and the middle portion of described base plate weld together or cast-in-block.
Adopt the crucible guard boards of casting monocrystalline silicon of the present invention, obviously can improve the effect of ingot casting silicon material internal heat transfer, suppress the generation of lateral heat flow, improve the Heat transfer coefficient of vertical direction, restrained effectively the formation of corner polycrystalline, thus improve the whole earning rate of ingot casting.
Accompanying drawing explanation
Fig. 1 illustrates the schematic diagram of conventional crucibles backplate;
Fig. 2 illustrates the schematic diagram of crucible guard boards first embodiment of the present invention;
Fig. 3 illustrates the schematic diagram of crucible guard boards second embodiment of the present invention;
Fig. 4 illustrates the thermal conduction schematic diagram adopting traditional crucible guard boards;
Fig. 5 illustrates the thermal conduction schematic diagram adopting crucible guard boards of the present invention;
Fig. 6 illustrates the schematic diagram of the 3rd embodiment provided by the invention.
In figure, the Reference numeral name of each several part is called: 1. planar section 52. lower plane part on crucible 2. ingot casting raw material 3. side plate 4. base plate 5. base 31. upper part 32. lower part 41. ring-shaped edge part 42. middle portion 51..
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 is the schematic diagram of conventional crucibles backplate, and the base plate of conventional crucibles backplate and side plate all adopt graphite as backplate.Fig. 2 is the schematic diagram of crucible guard boards of the present invention, and base plate 3 and the side plate 4 of crucible guard boards of the present invention all have employed composite structure.Fig. 3 is the thermal conduction schematic diagram adopting traditional crucible guard boards, and Fig. 4 is the thermal conduction schematic diagram adopting crucible guard boards of the present invention.
The preparation process of casting single crystal is as follows: first get out seed crystal and crucible, seed crystal is placed on the bottom of crucible, then above seed crystal, polysilicon and mother alloy is put into, then crucible guard boards is arranged on surrounding and the bottom of crucible, its latus inframedium is arranged on the surrounding of crucible, and base plate is arranged on the bottom of crucible, then puts it into ingot furnace, through heating, fusing, long crystalline substance, anneal and after 5 stages of cooling, can ingot casting be taken out.But the crucible guard boards be made up of single graphite material at present due to heat insulation effect bad, there is horizontal heat radiation in the position, corner of crucible in ingot casting process of growth, namely radial thermograde, thus produce polycrystalline, as shown in Figure 4, the yield of the ingot single crystal therefore obtained is lower.
As shown in Figure 2, the present invention adopts the first embodiment of combined type crucible side plate and base plate, side plate 3 around crucible 1 adopts upper and lower mode to combine, upper part 31 is still graphite protective plate, do not affect the heat transfer of heat-processed, the backplate that lower part 32 is made for lagging material, 31 is identical with the thickness of 32, because thermal conductivity is very little, therefore in ingot casting process of growth, the horizontal Heat transfer coefficient of the inner silicon material 2 of crucible is effectively suppressed, and ingot casting silicon material 2 inside exists horizontal heat transfer hardly, therefore effectively can suppress formation and the growth of corner polycrystalline.
Upper part can adopt graphite bolt to be connected with the mode of connection of lower part, also draw-in groove can be adopted to connect, the connection plane place of such as upper part arranges the rectangular parallelepiped card article of projection, the connection plane place of lower part arranges the elongate grooves corresponding with rectangular parallelepiped card article shape, with groove occlusion, two portions are connected by card article with lower part upper part during use, for ensureing the stability of occlusion, the width of groove preferably guard plate thickness 1/6 to 1/3, length is not less than 2/3 of every block backplate connection portion length.
As the further improved procedure of one, crucible bottom plate 4 also can adopt composite bottom board, and the ring-shaped edge part 41 of base plate 4 is still graphite manufacture, and middle portion 42 adopts thermal conductivity to be greater than the material manufacture of graphite.Such base plate can strengthen the heat transfer of the inner ingot casting vertical direction of crucible, increases the heat-conduction coefficient of crucible vertical direction, as shown in Figure 4, the thermal conduction of vertical direction is strengthened, and the thermal conduction of crucible side direction is weakened, thus accelerate the growth of ingot casting, reach energy-saving and cost-reducing object.
Upper part 31 of latus inframedium of the present invention can be consistent with the thickness of lower part 32, so that manufacture; Certainly for strengthening the effect of heat insulation of side plate lower part, the thickness of lower part also can be greater than the thickness of upper part, and upper and lower two-part thickness proportion is doubly advisable with 1.2-2, easily ruptures in the too large backplate junction of thickness difference.
For solving the technical problem easily ruptured in aforementioned backplate junction, Fig. 3 illustrates the second embodiment of the present invention, the thickness of lower part also can be increase gradually from top to bottom, namely the outside surface of lower part and vertical direction are at an angle, this angle should not be too large, angle makes too greatly the base areas of crucible guard boards excessive, be unfavorable for the base designs of support crucible, and thickness increases the too fast situation generation that backplate also can be caused to rupture, this angle is generally between 2-10 degree, design like this not only overcomes to a certain extent and causes backplate side plate to occur in the situation of upper and lower two portions junction easy fracture because lower part thickness increases, and more more increase toward crucible bottom due to thickness, be conducive to forming better vertical direction heat trnasfer.
Adopt the crucible guard boards for casting monocrystalline silicon of the present invention, obviously can improve the effect of ingot casting silicon material internal heat transfer, suppress the generation of lateral heat flow, improve the Heat transfer coefficient of vertical direction, restrained effectively the formation of corner polycrystalline, thus improve the whole earning rate of ingot casting.
The lagging material of lower part 32 can adopt thermal resistance coefficient good and can make by resistant to elevated temperatures material, as zinc oxide, zirconium white or silicon carbide etc., the select materials of lower part must be high-purity, and mass percent requires more than 99.99%, to avoid introducing contaminating impurity silicon material and crystal.The height of lower part 32 is according to the height control of ingot casting, consistent with the height of ingot casting in principle, and when generally casting, the height of ingot casting is the half of crucible height, and therefore the upper and lower two-part aspect ratio of the side plate 3 of crucible guard boards of the present invention is preferably 1:1.
The base plate of the present invention to backplate also improves, base plate 4 provided by the invention is divided into ring-shaped edge part 41 and middle portion 42, ring-shaped edge part 41 still adopts traditional graphite material to make, the backplate of crucible is except heat insulation, also has the effect stoping the outflow of silicon melt when silicon melt in crucible spills crucible, therefore the width value of ring-shaped edge part 41 is unsuitable too small, what the base plate of crucible and side plate were formed possesses certain spatial accommodation, and the 0.02-0.08 generally getting bottom board symmetry axial length is doubly advisable.The middle portion of base plate directly contacts with the bottom of crucible, wish to set up better thermal conduction, will be advisable with the cross section that can hold ingot casting in the cross section of base plate middle portion 42 on the one hand, and the material of base plate middle portion 42 adopts good heat conductivity and resistant to elevated temperatures material to make on the other hand; Molybdenum and tungsten metal be not volatile and oxidation at high temperature, can not pollute ingot casting, therefore as the preferred material making base plate middle portion 42.In order to ensure that ingot casting environment is not contaminated, requiring more than 99.99% as the tungsten of manufactured materials or the mass percent of molybdenum, gasifying under the high temperature conditions or the pollution ingot casting that volatilizees to stop impurity.
On the basis of above-mentioned improved procedure, the present invention also provides a kind of combined type backplate for ingot casting crucible of further improvement, the third embodiment of the present invention as shown in Figure 6, combined type backplate in the present embodiment comprises base plate, base plate divides middle portion 42 and ring-shaped edge part 41, and middle portion 42 is made for tungsten or molybdenum, the combined type backplate for ingot casting crucible described in the present embodiment also comprises base, base 5 comprises planar section 51, upper planar section 51 is made up of tungsten or molybdenum, the upper planar section 51 of base 5 and the middle portion 42 of described base plate weld together or cast-in-block, the lower plane part 52 of base and the water-cooled inwall of ingot furnace form good thermo-contact.The relatively original backplate of such design is freely placed on the way on base, strengthen the thermal conduction of backplate base plate to base, because extraneous factor makes the displacement of backplate respect thereto cause crucible bottom heat to distribute not smooth problem when this structure also thoroughly solves use, comparatively speaking, monoblock casting operation is simple, and heat transfer property is stronger.The combined type backplate for ingot casting crucible described in the present embodiment and original system completely compatible, any unnecessary equipment and step need not be increased, the heat radiation bottom ingot casting crucible can be strengthened, improve ingot casting yield.
In order to easily manufactured and base plate planeness are considered, the ring-shaped edge part 41 of base plate is preferably consistent with the thickness of the middle portion 42 of base plate.The shape of base plate is adapt to different crucible shapes, can make different shapes, and the bottom surface of a large amount of crucible used is all square at present, this is because the crucible of square sectional is by good in thermal property, therefore, preferably, the present invention can adopt foursquare base plate.
For verifying actual effect of the present invention, contriver's following experiment that adopted different experimental installations to do:
Crucible is the bottom surface length of side 780 millimeters, height 420 millimeters, the quartz crucible that wall thickness is 20 millimeters, the height of four blocks of side plates of crucible guard boards, length and thickness are 510 millimeters, 970 millimeters, 25 millimeters respectively, be fixedly connected with graphite bolt between side plate, be placed on base plate after side plate combination, the base plate length of side 970 millimeters, thickness 25 millimeters.Pour the silicon material of equal in quality and composition in experiment in crucible into, be filled with the argon gas of 1.5 atmospheric molar percentages 99.999%, heating 23 is little of 1550 degrees Celsius, and constant temperature keeps 6 hours subsequently, measures the yield of ingot casting after heat radiation in 27.5 hours.
Wherein first set experimental installation adopts the backplate of conventional single material.
In second cover experimental installation, the side plate of crucible guard boards adopts combined type backplate of the present invention, upper part adopts graphite, lower part adopt mass percent be 99.995% zinc oxide material make, the aspect ratio of upper part and lower part is 1:1, thickness is 25 millimeters, and upper part and lower part use graphite bolt to be connected.
3rd cover experimental installation is on the basis of the second cover experimental installation, the base plate of crucible guard boards is improved further, base plate is square, thick 25 millimeters, the length of side 970 millimeters, be divided into ring-shaped edge part and middle portion, the width of ring-shaped edge part 50 millimeters, graphite is made, middle portion is the square of the length of side 870 millimeters, the high purity tungsten of functional quality per-cent 99.995% manufactures, and have employed the base shown in embodiment three and backplate base plate with the use of mode, the upper planar section of base is also for the high purity tungsten of mass percent 99.995% is made, and weld together with middle portion, strengthen crucible bottom thermal conduction.
The ingot casting yield of finally surveying is as shown in Table 1:
| Ingot casting yield | |
| First set experimental installation | A% |
| Second cover experimental installation | (A+2.2)% |
| 3rd cover experimental installation | (A+3.5)% |
Table one
Experiment proves that the yield of the present invention to ingot casting is improved effect, can promote yield 2-3 percentage point.
The heat-proof quality of the present invention to crucible guard boards promotes, in the heat fused process of ingot casting initial stage to silicon material, well heater is positioned at side and the end face of crucible, because the temperature of fusion of silicon material is up to 1500 degree, therefore in order to ensure the fusing of silicon material, people are not easy to the heat-proof quality expecting strengthening crucible guard boards, and in actual use procedure, well heater is positioned at upper part position of crucible, coordinate with the well heater at top, heat transmits from silicon material top toward bottom, silicon material is melted gradually, therefore the reinforcement of the present invention to the heat-proof quality of crucible guard boards is limited to lower part of backplate, and suitably add heat-up time, both the fusing of crucible silicon material in heat-processed can not have been affected, in the long brilliant process of silicon material cooling, also the temperature gradient distribution that formation is better is beneficial to.And the actual effect achieving raising yield.
It should be noted that, in an experiment the sizing specification of backplate each several part is not limited the scope of the invention, but the conveniently effect that obtains of each innovative approach more of the present invention under the same conditions.In addition protection scope of the present invention is also not limited to the structure of fixing, and such as, base plate shown in Fig. 4 and the middle portion of base plate are square shape, and in fact the regular polygon of other shapes also obviously drops in protection scope of the present invention.Above-mentioned various different parts preferred embodiment, if not special explanation or significantly conflicting, can combinationally use.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification sheets of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (8)
1. for a combined type backplate for ingot casting crucible, comprise side plate (3) and base plate (4), it is characterized in that: described side plate (3) point upper and lower two portions, upper part (31) is made up of graphite, and lower part (32) is made up of lagging material;
Described base plate (4) comprises ring-shaped edge part (41) and middle portion (42), and ring-shaped edge part (41) is made for graphite, and middle portion (42) is made up of the material of thermal conductivity higher than graphite;
Also comprise base, described base comprises planar section (51), upper planar section (51) is identical with the manufactured materials of the middle portion (42) of base plate (4), and the upper planar section of base and the middle portion (42) of described base plate weld together or cast-in-block.
2. as claimed in claim 1 for the combined type backplate of ingot casting crucible, it is characterized in that: upper part (31) of described side plate (3) and the thickness of lower part (32) are identical.
3. as claimed in claim 1 for the combined type backplate of ingot casting crucible, it is characterized in that: lower part (32) of described side plate (3) is made up of the one in zinc oxide, zirconium white or silicon carbide.
4. as claimed in claim 1 for the combined type backplate of ingot casting crucible, it is characterized in that: the height of lower part (32) of described side plate (3) is identical with the height of ingot casting.
5. as claimed in claim 1 for the combined type backplate of ingot casting crucible, it is characterized in that: the thickness of described side plate (3) lower part (32) outwards increases from top to bottom, and cross section is at a right angle trapezoidal.
6. as claimed in claim 1 for the combined type backplate of ingot casting crucible, it is characterized in that: the middle portion (42) of described base plate (4) is made up of tungsten or molybdenum.
7. as claimed in claim 1 for the combined type backplate of ingot casting crucible, it is characterized in that: the shape of described base plate (4) and middle portion (42) is square.
8. as described in claim 1-7 any one for the combined type backplate of ingot casting crucible, it is characterized in that: the cross section of the middle portion (42) of described base plate (4) can hold the cross section of ingot casting.
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| CN201210312319.9A CN102808214B (en) | 2012-08-30 | 2012-08-30 | Combined-type protection plate for ingot casting crucible |
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| CN201210312319.9A CN102808214B (en) | 2012-08-30 | 2012-08-30 | Combined-type protection plate for ingot casting crucible |
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| CN102808214B true CN102808214B (en) | 2015-06-10 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103160936A (en) * | 2013-02-26 | 2013-06-19 | 昱成光能股份有限公司 | Manufacturing method of crucible protecting frame |
| CN106087054A (en) * | 2016-08-26 | 2016-11-09 | 常熟华融太阳能新型材料有限公司 | A kind of Novel polycrystalline silicon quartz crucible for ingot casting card article |
| WO2020087724A1 (en) * | 2018-11-02 | 2020-05-07 | 山东天岳先进材料科技有限公司 | Method for preparing high quality silicon carbide and device therefor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101755075A (en) * | 2007-07-20 | 2010-06-23 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN101949056A (en) * | 2010-09-25 | 2011-01-19 | 王敬 | Directional solidification furnace with heat preservation part at bottom of side wall of crucible |
| CN102159754A (en) * | 2008-09-19 | 2011-08-17 | Memc电子材料有限公司 | Directional solidification furnace for reducing melt contamination and reducing wafer contamination |
| CN102286774A (en) * | 2011-06-15 | 2011-12-21 | 安阳市凤凰光伏科技有限公司 | Casting method for producing similar single crystal silicon ingot thermal field gradient improving devices |
| CN202193875U (en) * | 2011-08-12 | 2012-04-18 | 昆山中辰矽晶有限公司 | Crystal growth device |
| CN202730295U (en) * | 2012-08-28 | 2013-02-13 | 天威新能源控股有限公司 | Crucible protecting plate for monocrystalline silicon casting |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110180229A1 (en) * | 2010-01-28 | 2011-07-28 | Memc Singapore Pte. Ltd. (Uen200614794D) | Crucible For Use In A Directional Solidification Furnace |
| US8562740B2 (en) * | 2010-11-17 | 2013-10-22 | Silicor Materials Inc. | Apparatus for directional solidification of silicon including a refractory material |
-
2012
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101755075A (en) * | 2007-07-20 | 2010-06-23 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN102159754A (en) * | 2008-09-19 | 2011-08-17 | Memc电子材料有限公司 | Directional solidification furnace for reducing melt contamination and reducing wafer contamination |
| CN101949056A (en) * | 2010-09-25 | 2011-01-19 | 王敬 | Directional solidification furnace with heat preservation part at bottom of side wall of crucible |
| CN102286774A (en) * | 2011-06-15 | 2011-12-21 | 安阳市凤凰光伏科技有限公司 | Casting method for producing similar single crystal silicon ingot thermal field gradient improving devices |
| CN202193875U (en) * | 2011-08-12 | 2012-04-18 | 昆山中辰矽晶有限公司 | Crystal growth device |
| CN202730295U (en) * | 2012-08-28 | 2013-02-13 | 天威新能源控股有限公司 | Crucible protecting plate for monocrystalline silicon casting |
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