CN102011180A - Thermal field structure of single crystal furnace - Google Patents
Thermal field structure of single crystal furnace Download PDFInfo
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- CN102011180A CN102011180A CN 201010601189 CN201010601189A CN102011180A CN 102011180 A CN102011180 A CN 102011180A CN 201010601189 CN201010601189 CN 201010601189 CN 201010601189 A CN201010601189 A CN 201010601189A CN 102011180 A CN102011180 A CN 102011180A
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Abstract
The embodiment of the invention discloses a thermal field structure of a single crystal furnace. The thickness of an insulating layer on the upper part of the side wall of the single crystal furnace is 60-200 mm; and the thickness of an insulating layer on the furnace bottom of the single crystal furnace is 100-400 mm. Compared with the thermal field structure of the single crystal furnace in the prior art, the thermal field structure of the single crystal furnace provided by the embodiment can reduce the heat loss in the single crystal pulling process by increasing the thickness of the insulating layers on the side wall and the furnace bottom so that the energy consumption can be reduced; and moreover, in the scheme, the thermal shielding with high cost does not need to be changed, and the power of the single crystal furnace can be reduced by 5-20% on the premise of guaranteeing the crystal quality and the production efficiency, thus the single crystal pulling cost can be effectively reduced.
Description
Technical field:
The present invention relates to semi-conductor and solar energy production technical field, relate in particular to a kind of thermal field of single crystal furnace structure that is used to adopt vertical pulling method formation silicon single crystal.
Background technology:
Along with the develop rapidly of photovoltaic industry, the quality and the cost of photovoltaic module proposed requirements at the higher level, the cost consumption of photovoltaic module more than 50% is in the production of ingot casting and wafer.Pulling of crystals manufacturing process (Czochralski, CZ method) is the main growth methods that is used for semi-conductor and solar cell silicon single crystal, and this method adopts dual mode to reduce cost usually: one, and the power consumption of reduction well heater; Two, improve pulling rate, in this dual mode, improve more effective, the higher pulling rate of method of pulling rate, not only can shorten the crystal growth time, enhance productivity, can also save power consumption.But, improve pulling rate simply, can bring the decline of crystal mass; Pulling rate is too fast even may produce the polycrystalline defective.Therefore, when improving pulling rate, must the thermal field of crystal growth system be optimized, to guarantee to grow up-to-standard crystal.
Single crystal growing furnace is a kind of in inert gas environment, with the fusing of polycrystalline materials such as polysilicon, uses the equipment of Grown by CZ Method dislocation-free monocrystalline with graphite heater.For the widely used single crystal growing furnace of photovoltaic industry, adopt the shape of change heat shielding and the technology of size to cut down the consumption of energy at present usually, thereby reduce production costs.Yet but there is following defective in this technology: the technology difficulty that the heat shielding of single crystal growing furnace is transformed and tested is big, and the cost costliness, so this technology is unfavorable for applying on a large scale.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of thermal field of single crystal furnace structure, with under the prerequisite that guarantees crystal mass and production efficiency, employing is convenient to implement and lower-cost scheme reduces energy consumption in the crystal-pulling, thereby, realize reducing the crystal-pulling cost by reducing single crystal growing furnace power.
The embodiment of the invention provides following technical scheme:
A kind of thermal field of single crystal furnace structure,
The insulation layer thickness of described single crystal growing furnace side wall upper part is 60 millimeters to 200 millimeters;
The furnace bottom insulation layer thickness of described single crystal growing furnace is 100 millimeters to 400 millimeters.
Preferably,
Comprise graphite material in the described furnace bottom thermal insulation layer.
Preferably,
Comprise soft felt in the described furnace bottom thermal insulation layer.
Preferably,
Comprise hard felt in the described furnace bottom thermal insulation layer.
Preferably,
Comprise graphite material, soft felt and hard felt in the described furnace bottom thermal insulation layer.
Compared with prior art, technique scheme has the following advantages:
In the technical scheme that the embodiment of the invention provided, disclosed thermal field of single crystal furnace structure is by increasing the thickness of sidewall and furnace bottom thermal insulation layer, compare in thermal field of single crystal furnace structure of the prior art, the heat that can reduce in the crystal-pulling process scatters and disappears, thereby can cut down the consumption of energy, this scheme need not to change the heat shielding of cost costliness, can be under the prerequisite that guarantees crystal mass and production efficiency, single crystal growing furnace power 5% to 20% can be reduced, therefore the crystal-pulling cost can be effectively reduced.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of single crystal growing furnace of the prior art;
Fig. 2 is a kind of result schematic diagram of the embodiment of the invention one single crystal growing furnace.
Embodiment
Just as described in the background section, the shape of available technology adopting change heat shielding and the technology of size reduce the energy consumption in the crystal-pulling, thereby reduce production costs.Yet the technology difficulty that prior art but exists following defective that the heat shielding of single crystal growing furnace is transformed and tested is big, and the cost costliness, so this technology is unfavorable for applying on a large scale.
As shown in Figure 1, be the structural representation of a kind of thermal field of single crystal furnace structure of the prior art, the insulation layer thickness of this single crystal growing furnace heat-preservation cylinder sidewall is to increase gradually from top to bottom, and thickness is that 50mm to 100mm does not wait; The bottom insulation layer thickness is that 50mm to 100mm does not wait.Discover that through the contriver by the thickness of thickening single crystal growing furnace thermal insulation layer, the heat that can reduce in the crystal-pulling process scatters and disappears, thereby can cut down the consumption of energy,, realize reducing the crystal-pulling cost by reducing single crystal growing furnace power.
On the basis based on above-mentioned research, the embodiment of the invention provides a kind of thermal field of single crystal furnace structure.
The insulation layer thickness of described single crystal growing furnace side wall upper part is 60 millimeters to 200 millimeters;
The furnace bottom insulation layer thickness of described single crystal growing furnace is 100 millimeters to 400 millimeters.
The thermal field of single crystal furnace structure that present embodiment provides is by increasing the thickness of sidewall and furnace bottom thermal insulation layer, compare in thermal field of single crystal furnace structure of the prior art, the heat that can reduce in the crystal-pulling process scatters and disappears, thereby can cut down the consumption of energy, this scheme need not to change the heat shielding of cost costliness, can under the prerequisite that guarantees crystal mass and production efficiency, single crystal growing furnace power 5% to 20% can be reduced, therefore the crystal-pulling cost can be effectively reduced.
In addition, the technical scheme that the embodiment of the invention provided can be passed through the Computer Numerical Simulation scheme, reproduces various crystal growing process fast and economically, and the requirement according to draw rate and crystal mass is optimized insulation layer thickness.
It more than is the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with synoptic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of indication equipment structure can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Embodiment one:
Present embodiment provides a kind of thermal field of single crystal furnace structure, as shown in Figure 2, is a kind of structural representation of this single crystal growing furnace, and the sidewall and the furnace bottom of this single crystal growing furnace are provided with thermal insulation layer, have formed a heat-preservation cylinder.
The insulation layer thickness of the single crystal growing furnace side wall upper part that present embodiment provides is 60 millimeters to 200 millimeters; The furnace bottom insulation layer thickness is 100 millimeters to 400 millimeters.Polysilicon melts under the high-purity gas protection in this single crystal growing furnace, growth, up to the crystal cool to room temperature, comes out of the stove.
In order to reduce the thermal insulation layer cost of this single crystal growing furnace, in the present embodiment, can comprise graphite material in the described furnace bottom thermal insulation layer; Also can comprise soft felt or hard felt in the described furnace bottom thermal insulation layer.Described furnace bottom thermal insulation layer can also comprise graphite material, soft felt and hard felt simultaneously.Wherein soft felt and hard felt also can be made by graphite material, because advantage such as heat resisting temperature height, the thermal insulation of the soft felt of graphite material and hard felt be good, easy to use, can be as the lagging material in the single crystal growing furnace.
Make raw material to adopt polysilicon, boron is doping agent, the high-purity gas environment is following in single crystal growing furnace, grow 6 inches or 8 inches silicon single-crystal, target resistivity 1-6 Ω * cm is a target, the insulation layer thickness that adopts side wall upper part is that 60 millimeters to 200 millimeters, furnace bottom insulation layer thickness are 100 millimeters to 400 millimeters single crystal growing furnace, than the insulation layer thickness that adopts side wall upper part is that 50 millimeters, furnace bottom insulation layer thickness are that 125 millimeters single crystal growing furnace is in crystal-pulling, can reduce the single crystal growing furnace energy consumption and get over about 20%, effectively reduce the crystal-pulling cost.The scheme that this increases insulation layer thickness compares and existing scheme of changing expensive heat shielding, and the cost of the solution of the present invention is lower, and implementing process is simple, is convenient to apply on a large scale.
The thermal field of single crystal furnace structure that present embodiment provides, by increasing the thickness of sidewall and furnace bottom thermal insulation layer, compare in thermal field of single crystal furnace structure of the prior art, the heat that can reduce in the crystal-pulling process scatters and disappears, thereby can cut down the consumption of energy, this scheme need not to change the heat shielding of cost costliness, can be under the prerequisite that guarantees crystal mass and production efficiency, single crystal growing furnace power 5% to 20% can be reduced, therefore the crystal-pulling cost can be effectively reduced.
In addition, the technical scheme that the embodiment of the invention provided can be passed through the Computer Numerical Simulation scheme, reproduces various crystal growing process fast and economically, and the requirement according to draw rate and crystal mass is optimized insulation layer thickness.
Various piece adopts the mode of going forward one by one to describe in this specification sheets, and what each part stressed all is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (5)
1. thermal field of single crystal furnace structure is characterized in that:
The insulation layer thickness of described single crystal growing furnace side wall upper part is 60 millimeters to 200 millimeters;
The furnace bottom insulation layer thickness of described single crystal growing furnace is 100 millimeters to 400 millimeters.
2. thermal field of single crystal furnace structure according to claim 1 is characterized in that:
Comprise graphite material in the described furnace bottom thermal insulation layer.
3. thermal field of single crystal furnace structure according to claim 1 is characterized in that:
Comprise soft felt in the described furnace bottom thermal insulation layer.
4. thermal field of single crystal furnace structure according to claim 1 is characterized in that:
Comprise hard felt in the described furnace bottom thermal insulation layer.
5. thermal field of single crystal furnace structure according to claim 1 is characterized in that:
Comprise graphite material, soft felt and hard felt in the described furnace bottom thermal insulation layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102304758A (en) * | 2011-09-26 | 2012-01-04 | 芜湖昊阳光能股份有限公司 | Furnace bottom heat-insulation device of graphite thermal field |
| CN102312284A (en) * | 2011-07-06 | 2012-01-11 | 浙江晶盛机电股份有限公司 | Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed |
| CN106498494A (en) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | A kind of thermal field of MEMS making silicon single crystal material and preparation method |
| CN106917136A (en) * | 2015-12-24 | 2017-07-04 | 有研半导体材料有限公司 | A kind of direct-pulling single crystal furnace thermal field insulation construction |
| CN106978624A (en) * | 2017-04-07 | 2017-07-25 | 河北工业大学 | A kind of method of growing polycrystalline silicon target |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312284A (en) * | 2011-07-06 | 2012-01-11 | 浙江晶盛机电股份有限公司 | Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed |
| CN102312284B (en) * | 2011-07-06 | 2013-11-13 | 浙江晶盛机电股份有限公司 | Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed |
| CN102304758A (en) * | 2011-09-26 | 2012-01-04 | 芜湖昊阳光能股份有限公司 | Furnace bottom heat-insulation device of graphite thermal field |
| CN106917136A (en) * | 2015-12-24 | 2017-07-04 | 有研半导体材料有限公司 | A kind of direct-pulling single crystal furnace thermal field insulation construction |
| CN106498494A (en) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | A kind of thermal field of MEMS making silicon single crystal material and preparation method |
| CN106978624A (en) * | 2017-04-07 | 2017-07-25 | 河北工业大学 | A kind of method of growing polycrystalline silicon target |
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