CN106087054A - A kind of Novel polycrystalline silicon quartz crucible for ingot casting card article - Google Patents
A kind of Novel polycrystalline silicon quartz crucible for ingot casting card article Download PDFInfo
- Publication number
- CN106087054A CN106087054A CN201610726784.5A CN201610726784A CN106087054A CN 106087054 A CN106087054 A CN 106087054A CN 201610726784 A CN201610726784 A CN 201610726784A CN 106087054 A CN106087054 A CN 106087054A
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- CN
- China
- Prior art keywords
- card article
- crucible
- polycrystalline silicon
- upper edge
- silica crucible
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of quartz crucible for casting polycrystalline silicon ingot upper edge hole card article, this card article is by carborundum or other resistance to 1000 DEG C of temperatures above and is not susceptible to the material of deformation and makes；The chis such as the length of this card article and width are determined by corresponding silica crucible upper edge hole thickness and length equidimension parameter thereof.This quartz crucible for casting polycrystalline silicon ingot card article, can ensure that silica crucible remains in that after 1,100 1200 DEG C of sintering the shape of rule does not deforms, substantially increase silica crucible serviceability during ingot casting, reduce the leakage silicon probability caused greatly because of crucible deformation quantity.
Description
Technical field
The present invention relates to a kind of silica crucible card article, particularly relate to a kind of prevent quartz crucible for casting polycrystalline silicon ingot from deforming
Card article.
Background technology
Silica crucible is the key consumable goods during polycrystalline silicon ingot casting.It uses environment the harshest, it is desirable to
Use more than 50h in the environment of more than 1550 DEG C continuously, and silicon situation does not occur to leak, therefore the properties of silica crucible is wanted
Ask higher.
The manufacturing process of silica crucible include following step, slurrying → molding → green compact be dried → sinter → process →
Finished product；Wherein sintering process the most critical step in being silica crucible manufacturing process, its temperature is generally 1100-1200
DEG C, but relatively low because of the DEFORMATION POINTS of silica crucible in the process, more than 1000 DEG C, silica crucible is i.e. easily deformed, and therefore sinters
The problem that the deformation quantity problem of rear product always perplexs silica crucible manufacturer.
Before ingot casting, the four sides of silica crucible and bottom graphite protective plate to be installed, it is simple to heating.If silica crucible shape
The big then silica crucible of variable is fitted not with backplate, and the uniformity heated during affecting ingot casting finally affects the quality of ingot casting,
Along with accident-leakage silicon the most serious during ingot casting even occurring when the increase of silicon material useful load is serious.Therefore ingot casting producer
Size and deformation quantity to silica crucible are the most increasingly paid attention to.
At present most silica crucible producers before product sinters on the upper edge hole of four sides abutment wall blocks respectively four strips
Shape card article, this card article be mainly composed of that carborundum, silicon nitride etc. be high temperature resistant and on-deformable material.But after sintered
Product yet suffers from a certain amount of outer extending to inside contract phenomenon.
Summary of the invention
Technical problem underlying to be solved by this invention has: one, reduces the deformation that silica crucible produces in sintering process,
Improve silica crucible using effect during ingot casting；Two, in use, new impurity will not be introduced, cause stone
The pollution of English crucible.
The present invention solves technical problem and be the technical scheme is that a kind of quartz crucible for casting polycrystalline silicon ingot upper edge hole card
Bar, it is characterised in that this card article is mainly composed of carborundum, silicon nitride or other resistance to 1000 DEG C of high temperature above and on-deformable
Material, described card article is arranged on the crucible body four sides upper edge hole of abutment wall and four turnings thereof.
Described quartz crucible for casting polycrystalline silicon ingot card article, it is characterised in that described card article width and length should regard quartz
Sidewall thickness and the length equidimension of crucible are determined.
Described for quartz crucible for casting polycrystalline silicon ingot card article, it is characterised in that described card article is by preventing deformation
Four strip card articles and the band preventing turning from deforming reeded four stub bars composition.
Described polycrystalline silicon ingot casting silica crucible card article, it is characterised in that install card article time fixing four sides abutment wall is first installed
Strip card article, more reeded for the band preventing turning from deforming stub bar is arranged on strip card article, plays
The effect that triangle is fixing.
The present invention by the surrounding of upper edge hole and turning before sintering at silica crucible block respectively carborundum, silicon nitride or
The card article that other resistance to more than 1100-1200 DEG C material is made, has overcome or alleviated by conventional quartz ceramic crucible and has produced after the sintering
Outer the extending to that product produce inside contracts phenomenon.Traditional method preventing silica crucible to be deformed in sintering process is at product four
Block strip card article week respectively, but exist still can not thoroughly solve sintering after outer the extending to that occur of product inside contract phenomenon.Adopt
All fix with card article at crucible upper edge hole and surrounding turning by the present invention, the generation of external contracting phenomenon in substantially stopping, can be extended to；Former
Because being: one, the material of card article is carborundum (fusing point 2700 DEG C, distillation), silicon nitride (fusing point 1900 DEG C) or other resistance to 1100-
More than 1200 DEG C and on-deformable material are made, and can effectively control the deformation that silica crucible produces in sintering process；
Two, in all extensively application such as carborundum and silicon nitride and casting ingot process, the pollution therefore without consideration, silica crucible caused.
Accompanying drawing explanation
Quartz crucible for casting polycrystalline silicon ingot upper edge hole shown in Fig. 1 present invention and the schematic diagram of surrounding turning card article；
The schematic diagram of silica crucible upper edge hole strip card article 1 shown in Fig. 2 present invention；
The band of silica crucible surrounding turning shown in Fig. 3 present invention reeded stub bar 2 schematic diagram.
Embodiment
Specific embodiment 1
A kind of quartz crucible for casting polycrystalline silicon ingot card article, this card article is arranged at silica crucible upper edge hole, and card article is by carbofrax material
Making, card article is made up of two parts, and a part is the card article 1 that matches with silica crucible upper edge hole, another part be respectively with
Four turnings of silica crucible upper edge hole collectively form the card article 2 of three-legged structure, card article 2 and card article 1, and card article 2 is provided with groove with solid
On card article 1.
Specific embodiment 2
A kind of quartz crucible for casting polycrystalline silicon ingot card article, this card article is arranged at silica crucible upper edge hole, and card article is by silicon nitride material
Making, card article is made up of two parts, and a part is the card article 1 that matches with silica crucible upper edge hole, another part be respectively with
Four turnings of silica crucible upper edge hole collectively form the card article 2 five of three-legged structure, card article 2 and card article 1, and card article 2 is provided with draw-in groove
To be fixed on card article 1, one of them crucible turning is provided with two parallel card articles 2, remains three corners and is respectively provided with one
Root card article 2.
Claims (4)
1. a quartz crucible for casting polycrystalline silicon ingot upper edge hole card article, it is characterised in that this card article is mainly composed of carborundum, nitrogen
SiClx or other resistance to 1100 DEG C of high temperature above and on-deformable material, described card article is arranged on the upper edge of crucible four sides abutment wall
Mouth and four turnings, its deformation acting as preventing or reduce silica crucible.
Quartz crucible for casting polycrystalline silicon ingot upper edge hole card article the most according to claim 1, it is characterised in that described card article
Width and length should be determined depending on the sidewall thickness of silica crucible and length equidimension.
The most according to claim 2 for quartz crucible for casting polycrystalline silicon ingot card article, it is characterised in that described card article by
Four the strip card articles and four band preventing turning from the deforming reeded stub bars that prevent deformation form.
4. according to described in claim any one of claim 1-3 for polycrystalline silicon ingot casting silica crucible card article, its feature
Be to install card article time the strip card article of fixing four sides abutment wall is first installed, the most again by fluted for the band that prevents turning from deforming
Stub bar be arranged on strip card article, play the effect that triangle is fixing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610726784.5A CN106087054A (en) | 2016-08-26 | 2016-08-26 | A kind of Novel polycrystalline silicon quartz crucible for ingot casting card article |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610726784.5A CN106087054A (en) | 2016-08-26 | 2016-08-26 | A kind of Novel polycrystalline silicon quartz crucible for ingot casting card article |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106087054A true CN106087054A (en) | 2016-11-09 |
Family
ID=57225173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610726784.5A Pending CN106087054A (en) | 2016-08-26 | 2016-08-26 | A kind of Novel polycrystalline silicon quartz crucible for ingot casting card article |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106087054A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811401A (en) * | 2017-11-20 | 2019-05-28 | 上海新昇半导体科技有限公司 | A kind of crucible device for long crystalline substance |
| CN111661997A (en) * | 2020-06-28 | 2020-09-15 | 徐州协鑫太阳能材料有限公司 | Method for preventing deformation of quartz crucible in sintering kiln |
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|---|---|---|---|---|
| CN2581917Y (en) * | 2002-11-07 | 2003-10-22 | 耿长金 | Improved electric heating crucible |
| CN101660209A (en) * | 2009-06-25 | 2010-03-03 | 南安市三晶阳光电力有限公司 | Method and device for reducing polysilicon cast ingot stress |
| CN202279871U (en) * | 2011-11-03 | 2012-06-20 | 浙江昱辉阳光能源有限公司 | Ceramic crucible for polycrystalline silicon ingoting |
| CN102808214A (en) * | 2012-08-30 | 2012-12-05 | 天威新能源控股有限公司 | Combined-type protection plate for ingot casting crucible |
| CN102888651A (en) * | 2011-07-22 | 2013-01-23 | 浙江思博恩新材料科技有限公司 | Crucible cap and crucible system |
| CN102912426A (en) * | 2012-10-16 | 2013-02-06 | 洛阳金诺机械工程有限公司 | Crystal melting combined crucible |
| JP2013129580A (en) * | 2011-12-22 | 2013-07-04 | Sharp Corp | Method for producing polycrystalline silicon ingot |
| CN203112964U (en) * | 2012-10-12 | 2013-08-07 | 上海东洋炭素有限公司 | Crucible cover plate of forcefully-rectified polycrystalline ingot furnace |
| CN104109903A (en) * | 2014-07-28 | 2014-10-22 | 常熟华融太阳能新型材料有限公司 | Recyclable quartz ceramic crucible for polycrystalline silicon ingot and preparation method of quartz ceramic crucible |
| CN204779926U (en) * | 2015-07-21 | 2015-11-18 | 浙江昊能光电有限公司 | Crucible subassembly of polycrystal ingot furnace |
| CN205024354U (en) * | 2015-09-06 | 2016-02-10 | 扬州荣德新能源科技有限公司 | Crucible backplate and crucible |
| CN105821475A (en) * | 2016-06-06 | 2016-08-03 | 晶科能源有限公司 | Crucible cover plate |
-
2016
- 2016-08-26 CN CN201610726784.5A patent/CN106087054A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2581917Y (en) * | 2002-11-07 | 2003-10-22 | 耿长金 | Improved electric heating crucible |
| CN101660209A (en) * | 2009-06-25 | 2010-03-03 | 南安市三晶阳光电力有限公司 | Method and device for reducing polysilicon cast ingot stress |
| CN102888651A (en) * | 2011-07-22 | 2013-01-23 | 浙江思博恩新材料科技有限公司 | Crucible cap and crucible system |
| CN202279871U (en) * | 2011-11-03 | 2012-06-20 | 浙江昱辉阳光能源有限公司 | Ceramic crucible for polycrystalline silicon ingoting |
| JP2013129580A (en) * | 2011-12-22 | 2013-07-04 | Sharp Corp | Method for producing polycrystalline silicon ingot |
| CN102808214A (en) * | 2012-08-30 | 2012-12-05 | 天威新能源控股有限公司 | Combined-type protection plate for ingot casting crucible |
| CN203112964U (en) * | 2012-10-12 | 2013-08-07 | 上海东洋炭素有限公司 | Crucible cover plate of forcefully-rectified polycrystalline ingot furnace |
| CN102912426A (en) * | 2012-10-16 | 2013-02-06 | 洛阳金诺机械工程有限公司 | Crystal melting combined crucible |
| CN104109903A (en) * | 2014-07-28 | 2014-10-22 | 常熟华融太阳能新型材料有限公司 | Recyclable quartz ceramic crucible for polycrystalline silicon ingot and preparation method of quartz ceramic crucible |
| CN204779926U (en) * | 2015-07-21 | 2015-11-18 | 浙江昊能光电有限公司 | Crucible subassembly of polycrystal ingot furnace |
| CN205024354U (en) * | 2015-09-06 | 2016-02-10 | 扬州荣德新能源科技有限公司 | Crucible backplate and crucible |
| CN105821475A (en) * | 2016-06-06 | 2016-08-03 | 晶科能源有限公司 | Crucible cover plate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811401A (en) * | 2017-11-20 | 2019-05-28 | 上海新昇半导体科技有限公司 | A kind of crucible device for long crystalline substance |
| CN111661997A (en) * | 2020-06-28 | 2020-09-15 | 徐州协鑫太阳能材料有限公司 | Method for preventing deformation of quartz crucible in sintering kiln |
| CN111661997B (en) * | 2020-06-28 | 2022-03-08 | 徐州协鑫太阳能材料有限公司 | Method for preventing deformation of quartz crucible in sintering kiln |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161109 |
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| RJ01 | Rejection of invention patent application after publication |