CN202265623U - Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon - Google Patents
Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon Download PDFInfo
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- CN202265623U CN202265623U CN2011202189912U CN201120218991U CN202265623U CN 202265623 U CN202265623 U CN 202265623U CN 2011202189912 U CN2011202189912 U CN 2011202189912U CN 201120218991 U CN201120218991 U CN 201120218991U CN 202265623 U CN202265623 U CN 202265623U
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- crucible
- crystalline silicon
- seed crystals
- crystal
- ingot furnace
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Abstract
The utility model discloses a crucible for a polycrystalline ingot furnace to cast mono-like crystalline silicon. The bottom of the crucible extends outwards to form a shaped of an inverted T, the extending portion of the crucible is higher than the thickness of seed crystals, the width of the extending portion can accommodate a part of a single seed crystal, and a corner of the extending portion is a chamfer. The bottom of the crucible extends outwards, the bottom of the crucible is paved with the seed crystals, the width of the seed crystals is wider than the upper end of the bottom of the crucible, and melting silicon materials at the upper ends of the seed crystals can be led by the seed crystals to generate mono-like crystalline silicon with the single crystal orientation, thereby enabling the crystalline silicon to have less crystal boundary and dislocation, and improving average efficiency of batteries manufactured by cast crystalline silicon.
Description
Technical field
The utility model belongs to the manufacture of solar cells technical field, relates to a kind of crucible of using with polycrystalline ingot furnace foundry silicon single crystal.
Background technology
Photovoltaic generation is one of energy utilization form that cleans most environmental protection, has obtained fast development in recent years.Present solar cell mainly by the crystalline silicon material preparation, comprises polysilicon and silicon single crystal.There are advantages such as the energy consumption under big, the identical production capacity of production capacity is low in the polysilicon casting for pulling of silicon single crystal; So the silicon single crystal that the polysilicon cost that adopts casting to process is processed far below vertical pulling, the polysilicon that therefore adopts casting to process occupies about 60% of photovoltaic market.But there are a large amount of crystal boundaries and dislocation in the polysilicon; A large amount of metallic impurity can accumulate in crystal boundary and the dislocation place forms deep levels; Become effective deathnium of photo-generated carrier; Thereby greatly reduce the minority carrier lifetime of silicon chip, the low 1%-2% of battery efficiency that the battery efficiency that the polysilicon of casting is processed is processed with respect to silicon single crystal.In order both to improve battery efficiency, reduce production costs again, the class silicon single crystal or the silicon single crystal that how cast out single crystal direction, big crystal grain with the equipment and the raw material of casting polycrystalline silicon become general in the industry research direction.
The someone utilizes polycrystalline ingot furnace and the made class silicon single crystal of making polysilicon at present; One deck seed crystal in the shop, bottom of square crucible; In crucible, lay silicon material and alloying element again, the heating through the polycrystalline ingot furnace makes silicon material and alloying element thawing on the seed crystal silico briquette, and each seed crystal silico briquette is not by whole thawings; Through control, under the inducing of the square seed crystal that does not melt, solidify a formation type silicon single crystal again to thermal field.But because there is certain chamfering in the square crucible bottom of its use of existing polycrystalline ingot furnace; As shown in Figure 1, make the seed crystal silico briquette can not be paved with whole crucible bottom, so in the process of crystal growth; Interior near the zone of sidewall of crucible owing to there is not the guiding of seed crystal silico briquette; Whole cylindrical region or bigger zone grow up to polycrystalline to the zone when causing length brilliant, and the class silicon single crystal of casting can not be realized less crystal boundary and dislocation to greatest extent, thus the av eff of the battery that influence is made.
The utility model content
The purpose of the utility model is exactly to solve the problems referred to above that exist in the prior art; A kind of crucible of using with polycrystalline ingot furnace foundry silicon single crystal is provided; Adopt the polycrystalline ingot furnace of this crucible, can make seed crystal be paved with whole crucible bottom, thereby make near the class silicon single crystal that grows up to single crystal orientation in the zone of crucible wall to greatest extent; Thereby make crystalline silicon that still less crystal boundary and dislocation arranged, improve the av eff of the battery of its manufacturing.
For realizing above-mentioned purpose, the technical solution of the utility model is: a kind of crucible of using with polycrystalline ingot furnace foundry silicon single crystal, and its crucible bottom stretches out; Form the shape of inverted T-shaped; The extension is higher than the thickness of seed crystal, the wide part that can hold single seed crystal, and corner is a chamfering.
Because the crucible bottom of the utility model stretches out; Can make seed crystal be paved with crucible bottom; And be wider than the upper end of crucible bottom; The melted silicon material that the makes seed crystal upper end guiding of seed crystal in this section generates the class silicon single crystal in single crystal orientation down, thereby makes crystalline silicon that still less crystal boundary and dislocation arranged, and improves the av eff of the battery that the crystalline silicon that casts out makes.
Description of drawings
Fig. 1 is the internal structure synoptic diagram of existing polycrystalline ingot furnace.
Fig. 2 is the internal structure synoptic diagram of the utility model.
Embodiment
As shown in Figure 2, the crucible bottom of present embodiment stretches out, and forms the shape of inverted T-shaped, and the extension is higher than the thickness of seed crystal, the wide part that can hold single seed crystal, and corner is a chamfering.With the seed crystal thickness of laying is that 30mm, crucible outside dimension are the crucible calculating of 880*470mm, wall thickness 22mm; A high 32mm is arranged at inner surface of crucible sidewall bottom; The outstanding space of 22mm stretches out; The radius of the chamfering radian of corner is 15m, just can hold the part of seed crystal, and the direction along crucible wall in the feasible long brilliant process has the guiding of bottom seed crystal to grow up to more large-area monocrystalline.
Claims (1)
1. crucible of using with polycrystalline ingot furnace foundry silicon single crystal, it is characterized in that: its crucible bottom stretches out, and forms the shape of inverted T-shaped, and the extension is higher than the thickness of seed crystal, the wide part that can hold single seed crystal, corner is a chamfering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202189912U CN202265623U (en) | 2011-06-27 | 2011-06-27 | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202189912U CN202265623U (en) | 2011-06-27 | 2011-06-27 | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202265623U true CN202265623U (en) | 2012-06-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202189912U Expired - Lifetime CN202265623U (en) | 2011-06-27 | 2011-06-27 | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202265623U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105586632A (en) * | 2016-03-18 | 2016-05-18 | 南通大学 | Mono-like silicon ingot casting technology |
| CN105603509A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Production process of monocrystalline silicon similar cast ingot based on directional solidification |
| CN105603508A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Seed crystal splicing structure applicable to monocrystalline silicon-like ingots |
| CN105755531A (en) * | 2016-03-18 | 2016-07-13 | 南通大学 | Seed crystal block applicable to mono-like silicon cast ingot |
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
-
2011
- 2011-06-27 CN CN2011202189912U patent/CN202265623U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105586632A (en) * | 2016-03-18 | 2016-05-18 | 南通大学 | Mono-like silicon ingot casting technology |
| CN105603509A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Production process of monocrystalline silicon similar cast ingot based on directional solidification |
| CN105603508A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Seed crystal splicing structure applicable to monocrystalline silicon-like ingots |
| CN105755531A (en) * | 2016-03-18 | 2016-07-13 | 南通大学 | Seed crystal block applicable to mono-like silicon cast ingot |
| WO2017156989A1 (en) * | 2016-03-18 | 2017-09-21 | 南通大学 | Seed crystal block applicable to monocrystal silicon-like cast ingot |
| CN105586632B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | One species monocrystalline silicon cast ingot technique |
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 074000 new industrial zone of Hebei, Gaobeidian Province, light green new energy Limited by Share Ltd Patentee after: Guangwei Green Energy Technology Co.,Ltd. Address before: 074000 new industrial zone of Hebei, Gaobeidian Province, light green new energy Limited by Share Ltd Patentee before: Lightway Green New Energy Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20160715 Address after: 074000, Baoding City, Hebei province Gaobeidian City Road on the north side of the west side of prosperous street Patentee after: BAODING LIGHTWAY GREEN ENERGY TECHNOLOGY CO.,LTD. Address before: 074000 new industrial zone of Hebei, Gaobeidian Province, light green new energy Limited by Share Ltd Patentee before: Guangwei Green Energy Technology Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20120606 |
|
| CX01 | Expiry of patent term |