CN201908152U - Improved straight pulling single crystal furnace - Google Patents
Improved straight pulling single crystal furnace Download PDFInfo
- Publication number
- CN201908152U CN201908152U CN201020646469XU CN201020646469U CN201908152U CN 201908152 U CN201908152 U CN 201908152U CN 201020646469X U CN201020646469X U CN 201020646469XU CN 201020646469 U CN201020646469 U CN 201020646469U CN 201908152 U CN201908152 U CN 201908152U
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- crucible
- carbon felt
- single crystal
- furnace
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Abstract
The utility model discloses an improved straight pulling single crystal furnace, which structurally comprises a furnace wall, a side wall carbon felt attached to the inner side of the furnace wall and a heat-insulating cylinder attached to the inner side of the side wall carbon felt, wherein a crucible and a graphite heater for heating the crucible are arranged inside the furnace body; a heat shield is arranged at the upper part of the crucible; a diversion cylinder is arranged at the upper part of the heat shield; and the heat shield and the diversion cylinder are in respectively an inverted circular truncated cone shape. By using the improved straight pulling single crystal furnace, the power consumption of a heater can be reduced, the crystal pulling speed is improved, the product quality of crystals is simultaneously ensured, and the manufacturing cost of a single crystal is reduced.
Description
Technical field
The utility model relates to a kind of czochralski crystal growing furnace, especially a kind ofly can reduce the czochralski crystal growing furnace that the well heater power consumption improves pulling rate simultaneously.
Background technology
At present, utilize the technology of czochralski crystal growing furnace manufacture order crystal silicon comparatively ripe, and realized large-scale industrial production already.When the key problem of lower mono-crystalline silicon manufacturing is how to reduce its manufacturing cost, adopt two kinds of methods now usually: the one, reduce the power consumption of well heater; The 2nd, improve pulling rate.But, simply reduce power consumption or improve pulling rate, the decline that can bring crystal mass.Therefore, how when reducing power consumption, improving pulling rate, to guarantee quality product, become a vital technical barrier.
The utility model content
The technical problems to be solved in the utility model provides a kind of improved czochralski crystal growing furnace, can guarantee the quality of crystal product when reducing the well heater power consumption, improving pulling rate, reduces the manufacturing cost of silicon single crystal.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: a kind of improved czochralski crystal growing furnace, comprise the furnace wall in the structure, be close to the inboard sidewall carbon felt that is provided with in furnace wall and be close to the inboard heat-preservation cylinder that is provided with of sidewall carbon felt, the graphite heater that is provided with crucible and crucible is heated in body of heater inside, crucible top is provided with heat shielding, and described heat shielding is reverse frustoconic.
As a kind of optimal technical scheme of the present utility model, described heat shielding top is provided with guide shell, and this guide shell is reverse frustoconic.
As a kind of optimal technical scheme of the present utility model, the thickness of the sidewall carbon felt on described crucible top is greater than the thickness of crucible lower sides carbon felt, and is corresponding therewith, and described heat-preservation cylinder upper diameter is less than its underpart diameter.
As a kind of optimal technical scheme of the present utility model, be connected by the graphite pallet between the described heat-preservation cylinder upper and lower part.
Adopt the beneficial effect that technique scheme produced to be: the heat shielding of the utility model reverse frustoconic has effectively reduced thermal source crystalline has been toasted, thereby accelerated the crystalline formation speed, made crystallization rate improve 20% and do not increase the probability of occurrence of macroscopical dislocation at least; Guide shell of the present utility model has been accelerated argon gas by crystalline speed, deposits the probability that falls into melt thereby reduced SiO; The heat leakage of czochralski crystal growing furnace mainly occurs in crucible with top, and with the thickening of the sidewall carbon felt on top, heat-preservation cylinder is corresponding to be improved to up-thin-low-thick shape to the utility model, has effectively stoped the thermosteresis of body of heater, has reduced the well heater power consumption with crucible.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Fig. 1 is the structural representation of an embodiment of the utility model.
Among the figure: 1, furnace wall 2, sidewall carbon felt 3, heat-preservation cylinder 4, graphite pallet 5, crucible 6, graphite heater 7, heat shielding 8, guide shell 9, crystal 10 melts.
Embodiment
Referring to accompanying drawing, comprise furnace wall 1 in the structure of a specific embodiment of the utility model, be close to the furnace wall 1 inboard sidewall carbon felt that is provided with 2 and be close to the sidewall carbon felt 2 inboard heat-preservation cylinders 3 that are provided with, the graphite heater 6 that is provided with crucible 5 in body of heater inside and crucible 5 is heated, crucible 5 tops are provided with heat shielding 7, heat shielding 7 is reverse frustoconic, heat shielding 7 tops are provided with guide shell 8, this guide shell 8 also is reverse frustoconic, the thickness of the sidewall carbon felt 2 on crucible 5 tops is greater than the thickness of crucible 5 lower sides carbon felts 2, corresponding therewith, heat-preservation cylinder 3 upper diameter are less than its underpart diameter, on the heat-preservation cylinder 3, be connected by graphite pallet 4 between the bottom.
Principle of work of the present utility model is: utilize czochralski crystal growing furnace manufacture order crystal silicon of the present utility model, because heat shielding 7 is reverse frustoconic, effectively reduced the baking of thermal source to crystal 9, make the axial-temperature gradient of crystal 9 increase, and the axial-temperature gradient of melt 10 is constant substantially, therefore crystal pulling, crystallization rate can improve 20% at least, and do not increase the probability that macroscopical dislocation takes place; Because guide shell 8 and heat shielding 7 all are reverse frustoconic, heat shielding 7 outside surfaces and crucible 5 inner-wall surfaces from top to bottom form certain taper, the argon gas runner is convergent trend, the argon gas mean flow rate obviously increases, help the SiO that silicon melt 10 surface evaporations go out is taken away sooner, reduced the deposition of SiO, reduced SiO in the wall deposition and fall into the probability of melt 10, improved crystal 9 qualities in crucible 2 inner-wall surfaces and heat shielding 7 outside wall surface; The heat leakage of czochralski crystal growing furnace mainly occurs in crucible 5 with top, and the utility model is sidewall carbon felt 2 thickening of crucible 5 with top, and heat-preservation cylinder 3 is corresponding to be improved to up-thin-low-thick shape, has effectively stoped the thermosteresis of body of heater, has reduced the well heater power consumption; To sum up, the utility model can guarantee the quality of crystal 9 products when reducing the well heater power consumption, improving pulling rate, reduces the manufacturing cost of silicon single crystal.
Foregoing description only proposes as the enforceable technical scheme of the utility model, not as the single restricted condition to its technical scheme itself.
Claims (4)
1. improved czochralski crystal growing furnace, comprise furnace wall (1) in the structure, be close to the inboard sidewall carbon felt (2) that is provided with in furnace wall (1) and be close to the inboard heat-preservation cylinder (3) that is provided with of sidewall carbon felt (2), the graphite heater (6) that is provided with crucible (5) in body of heater inside and crucible (5) is heated, crucible (5) top is provided with heat shielding (7), it is characterized in that: described heat shielding (7) is reverse frustoconic.
2. improved czochralski crystal growing furnace according to claim 1 is characterized in that: described heat shielding (7) top is provided with guide shell (8), and this guide shell (8) is reverse frustoconic.
3. improved czochralski crystal growing furnace according to claim 1 and 2, it is characterized in that: the thickness of the sidewall carbon felt (2) on described crucible (5) top is greater than the thickness of crucible (5) lower sides carbon felt (2), corresponding therewith, described heat-preservation cylinder (3) upper diameter is less than its underpart diameter.
4. improved czochralski crystal growing furnace according to claim 3 is characterized in that: be connected by graphite pallet (4) between described heat-preservation cylinder (3) upper and lower part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020646469XU CN201908152U (en) | 2010-12-08 | 2010-12-08 | Improved straight pulling single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020646469XU CN201908152U (en) | 2010-12-08 | 2010-12-08 | Improved straight pulling single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201908152U true CN201908152U (en) | 2011-07-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020646469XU Expired - Fee Related CN201908152U (en) | 2010-12-08 | 2010-12-08 | Improved straight pulling single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201908152U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102345158A (en) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) |
| CN103451721A (en) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Single crystal growth furnace with water-cooling heat shield |
-
2010
- 2010-12-08 CN CN201020646469XU patent/CN201908152U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102345158A (en) * | 2011-08-14 | 2012-02-08 | 上海合晶硅材料有限公司 | Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) |
| CN103451721A (en) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Single crystal growth furnace with water-cooling heat shield |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20161208 |