CN102345158A - Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) - Google Patents
Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) Download PDFInfo
- Publication number
- CN102345158A CN102345158A CN2011102319253A CN201110231925A CN102345158A CN 102345158 A CN102345158 A CN 102345158A CN 2011102319253 A CN2011102319253 A CN 2011102319253A CN 201110231925 A CN201110231925 A CN 201110231925A CN 102345158 A CN102345158 A CN 102345158A
- Authority
- CN
- China
- Prior art keywords
- crystal bar
- cop
- quartz crucible
- mono
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a pulling method of a mono-crystalline crystal bar for improving COP (Coefficient Of Performance). The method comprises the following steps of: fusing silicon in a quartz crucible; pulling a mono-crystalline crystal bar by using seed crystal; arranging an upper thermal insulation cylinder and a lower thermal insulation cylinder around the quartz crucible; arranging a flow guide cylinder above the quartz crucible, wherein the upper thermal insulation cylinder is provided with 1-7 carbon felt layers. By adopting the pulling method of the mono-crystalline crystal bar, the COP in the crystal bar can be improved, the reject ratio of the crystal bar is reduced, and the production cost is saved.
Description
Technical field
The present invention relates to the monocrystalline crystal bar drawing method of a kind of COP of improvement.
Background technology
Crystalline primary partical defective COP is the important factor that influences the silicon chip quality.Different according to the specification of particle, the silicon chip quality can be divided into third gear, first grade is that particle more than or equal to 0.2um is less than 15; Second grade is less than 5 more than or equal to the 0.3um particle; Third gear is less than 10 more than or equal to 0.3um.Along with progressively raising to the silicon chip specification of quality, require to weigh silicon chip and all should meet above-mentioned requirements according to each grade standard, and crystal bar along its length each section all should meet the requirements.During existing drawing method crystal pulling, COP is higher, causes the crystal bar fraction defective high, has increased production cost.
Summary of the invention
The objective of the invention is in order to overcome deficiency of the prior art, the monocrystalline crystal bar drawing method of a kind of COP of improvement is provided.
For realizing above purpose, the present invention realizes through following technical scheme:
Improve the monocrystalline crystal bar drawing method of COP, molten silicon in quartz crucible utilizes seed crystal pulling monocrystal crystal bar; Be provided with heat-preservation cylinder and following heat-preservation cylinder around quartz crucible; Described quartz crucible top is provided with guide shell, it is characterized in that last heat-preservation cylinder is provided with layer 1-7 carbon felt.
Preferably, said heat-preservation cylinder down comprises insulation inner core and following insulation urceolus down; The said urceolus of insulation down is a curing carbon fiber.
Preferably, described guide shell is double-deck barrel.
Preferably, between the described double-deck barrel with air communication.
The method of the pulling monocrystal crystal bar among the present invention can be improved the COP in the crystal bar, has reduced the fraction defective of crystal bar, saves production cost.
Description of drawings
The axial sectional view of crystal bar drawing device that Fig. 1 uses for the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is carried out detailed description:
The comparative example 1:
Use existing heat-preservation cylinder, heat-preservation cylinder is curing carbon fiber from top to bottom.Guide shell adopts one deck barrel.
Like the device of Fig. 1 for the pulling monocrystal that uses among the present invention.As shown in Figure 1, be provided with heat-preservation cylinder in the stove tube 1.Heat-preservation cylinder comprises heat-preservation cylinder 21 and following heat-preservation cylinder 22.Last heat-preservation cylinder 21 outer walls are surrounded by the carbon felt, and every layer of carbon felt thickness is 6.38mm.Guide shell 3 adopts the two layered cylinder wall construction, is in communication with the outside between the double-deck barrel.
According to the listed processing parameter pulling monocrystal crystal bar of table 1.
Table 1
Draw crystal bar when last heat-preservation cylinder carbon carpet veneer number is respectively 1 layer, 3 layers and 5 layers, every crystal bar is divided into isometric 2 sections from head end to tail end, be machined to polished section after, with AWIS3100 measure CO P.Do not consider the influence of LPD in the data analysis.Test COP average data is as shown in table 2.Per-cent in table 2 and the table 3 is meant: the per-cent of COP in all COP of different sizes.
Table 2
Can find out that from table 2 behind the minimizing carbon felt number, crystal bar COP makes moderate progress.
The crystal bar COP that uses individual layer guide shell and double-deck guide shell to produce is divided into two sections from head end to tail end, and test its fraction defective data to such as table 3: two kinds of production equipments of following data test are except that guide shell barrel number of plies difference, and all the other parameters are all identical.
Can find out from table 3, compare with the individual layer guide shell that double-deck guide shell COP fraction defective is low, especially second section monocrystalline COP fraction defective will be well below the individual layer guide shell.
Embodiment among the present invention only is used for that the present invention will be described, does not constitute the restriction to the claim scope, and other substituting of being equal in fact that those skilled in that art can expect are all in protection domain of the present invention.
Claims (4)
1. improve the monocrystalline crystal bar drawing method of COP, molten silicon in quartz crucible utilizes seed crystal pulling monocrystal crystal bar; Be provided with heat-preservation cylinder and following heat-preservation cylinder around quartz crucible; Described quartz crucible top is provided with guide shell, it is characterized in that last heat-preservation cylinder is provided with layer 1-7 carbon felt.
2. the monocrystalline crystal bar drawing method that improves COP according to claim 1 is characterized in that, said heat-preservation cylinder down comprises insulation inner core and following insulation urceolus down; The said urceolus of insulation down is a curing carbon fiber.
3. the monocrystalline crystal bar drawing method that improves COP according to claim 1 is characterized in that described guide shell is double-deck barrel.
4. the monocrystalline crystal bar drawing method that improves COP according to claim 2 is characterized in that, between the described double-deck barrel with air communication.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102319253A CN102345158A (en) | 2011-08-14 | 2011-08-14 | Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102319253A CN102345158A (en) | 2011-08-14 | 2011-08-14 | Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102345158A true CN102345158A (en) | 2012-02-08 |
Family
ID=45544221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102319253A Pending CN102345158A (en) | 2011-08-14 | 2011-08-14 | Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102345158A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201058893Y (en) * | 2007-07-19 | 2008-05-14 | 任丙彦 | Device for growing gallium-doped silicon monocrystal by czochralski method |
| CN201793810U (en) * | 2010-09-30 | 2011-04-13 | 常州天合光能有限公司 | Flow guide tube of direct pulling single crystal furnace |
| CN201908152U (en) * | 2010-12-08 | 2011-07-27 | 宁晋晶兴电子材料有限公司 | Improved straight pulling single crystal furnace |
| CN102212875A (en) * | 2011-06-03 | 2011-10-12 | 无锡中能晶科光电科技股份有限公司 | Thermal field system of silicon single crystal furnace |
| CN102400210A (en) * | 2010-09-08 | 2012-04-04 | 北京有色金属研究总院 | Method for adjusting defects in Czochralski silicon single crystal |
-
2011
- 2011-08-14 CN CN2011102319253A patent/CN102345158A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201058893Y (en) * | 2007-07-19 | 2008-05-14 | 任丙彦 | Device for growing gallium-doped silicon monocrystal by czochralski method |
| CN102400210A (en) * | 2010-09-08 | 2012-04-04 | 北京有色金属研究总院 | Method for adjusting defects in Czochralski silicon single crystal |
| CN201793810U (en) * | 2010-09-30 | 2011-04-13 | 常州天合光能有限公司 | Flow guide tube of direct pulling single crystal furnace |
| CN201908152U (en) * | 2010-12-08 | 2011-07-27 | 宁晋晶兴电子材料有限公司 | Improved straight pulling single crystal furnace |
| CN102212875A (en) * | 2011-06-03 | 2011-10-12 | 无锡中能晶科光电科技股份有限公司 | Thermal field system of silicon single crystal furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5704395B2 (en) | Glass roll package | |
| CN202433554U (en) | Multi-core optical fiber | |
| CN101930893A (en) | Microchannel plate (MCP) having an asymmetric packing pattern for higher open area ratio (OAR) | |
| CN102345158A (en) | Pulling method of mono-crystalline crystal bar for improving COP (Coefficient Of Performance) | |
| CN103737184B (en) | Device and fixture for performing laser machining on through hole and fixture installation method | |
| JP6214998B2 (en) | Thin glass long body | |
| CN102496602A (en) | Chip cutting method | |
| CN205723105U (en) | A kind of magnetic core for transformer | |
| CN203649017U (en) | Multilayer compact multi-head wire drawing machine | |
| CN203406078U (en) | Motor leading cable | |
| CN102701604A (en) | Warp slurry of fiberglass electronic textile yarn | |
| CN202881443U (en) | Carbon fiber composite preform for crystal growing furnace | |
| CN204496979U (en) | Cushion to draw and get multiple twin cabler | |
| CN201417334Y (en) | Semi-dry optical cable for communication | |
| WO2010028103A3 (en) | String ribbon crystal and method to grow them using strings with refractory metal core | |
| CN203038768U (en) | Combined isolated transformer | |
| CN205973288U (en) | Disc type be used for device that wire deposited | |
| CN202968852U (en) | Acetate fiber | |
| CN207830414U (en) | A kind of deceleration mechanism of core-spun yarn mechanism | |
| CN102534783B (en) | Inner layer heat insulation screen for single crystal furnace | |
| CN202595331U (en) | Thermal insulation device for thermal-field crucible | |
| CN202433576U (en) | Optical cable with parallel-ribbon sleeve | |
| CN202650736U (en) | Composite rod type insulator core rod | |
| CN209533886U (en) | A kind of diamond cutting line slicing machine line storage wheel and storage line structure | |
| CN202175738U (en) | High-electromagnetism-efficiency sapphire crystal growing furnace body in pulling method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120208 |