CN202246991U - Device for growing solar grade silicon single crystal with low cost - Google Patents
Device for growing solar grade silicon single crystal with low cost Download PDFInfo
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- CN202246991U CN202246991U CN2011203453382U CN201120345338U CN202246991U CN 202246991 U CN202246991 U CN 202246991U CN 2011203453382 U CN2011203453382 U CN 2011203453382U CN 201120345338 U CN201120345338 U CN 201120345338U CN 202246991 U CN202246991 U CN 202246991U
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- heat
- silicon single
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Abstract
The utility model relates to a device for growing solar grade silicon single crystals with low cost, which mainly comprises a heater, a graphite crucible, a heat insulation cover, a heat insulation barrel, a solidified heat insulation carbon felt, a furnace bottom pressing disk, a connecting rod and air guide sleeves. A graphite fourth air guide sleeve is mounted at the periphery of the heater, and a third air guide sleeve is mounted on the fourth air guide sleeve; the graphite insulation barrel is mounted outside the fourth air guide sleeve, and the graphite insulation barrel is positioned by a bayonet of the graphite furnace bottom pressing disk; the upper edge of the second air guide sleeve is positioned by a bayonet of the heat insulation cover, and the first air guide sleeve is positioned by the heat insulation cover. In the utility model, through changing the shapes and the relative positions of the air guide sleeves to molten silicon and all the components, argon flowing can be adjusted, and ineffective heat conduction and heat radiation can be reduced; as a result, the normal growth of the silicon single crystals can be guaranteed by the air guide sleeves under low power consumption and low argon consumption, the growth period of the silicon single crystals is shortened, and the growth cost is reduced.
Description
Technical field
The utility model belongs to the device of Grown by CZ Method silicon single-crystal, and a kind of especially device of low-cost growth for solar grade silicon is specially 20 cun graphite systems of low-cost Grown by CZ Method solar energy level silicon single crystal.Geomery adjustment argon gas through each parts of graphite system in the graphite system design flows, reduces invalid thermal conduction and thermal radiation, makes it can under reduce power consumption, guarantee the normal growth of silicon single-crystal under the low argon gas consumption.
Technical background
Along with the aggravation of photovoltaic industry competition, more and more need reduce the tooling cost in the production process.In the pulling of silicon single crystal process, power consumption accounts for the about 20-30% of cost (2008-2009 China solar battery casting ingot crystal pulling section industry and equipment research report, Chinese industry consulting network, http://www.china-consulting.cn).Argon gas consumption accounts for total cost about 20% (2008-2009 China solar battery casting ingot crystal pulling section industry and equipment research report, Chinese industry consulting network, http://www.china-consulting.cn).The design of graphite system has directly influenced electric power consumption and the argon gas consumption in the pulling of silicon single crystal process of growth.Therefore, have only the graphite system design of optimization can solve a difficult problem of under lower cost, making solar energy level silicon single crystal.
The graphite system (for example, the FT-CZ2008A monocrystalline type of furnace is 20 cun a graphite system) of the silicon single crystal bar of 6 inches of the employing CZ farad systems of commercially available routine and 8 inches electric power consumption and argon gas consumption usually is higher relatively.Up to the present, do not see the report of 20 cun graphite system designs of relevant low-cost Grown by CZ Method solar energy level silicon single crystal both at home and abroad.
The utility model content
The device of a kind of low-cost growth for solar grade silicon that the utility model provides; The utility model is the graphite system when Φ 20 that is fit to single crystal growing under the low argon gas of reduce power consumption is installed in the burner hearth of single crystal growing furnace; Geomery adjustment argon gas through each parts of graphite system flows, reduces invalid thermal conduction and thermal radiation; Make it can under reduce power consumption, guarantee the normal growth of silicon single-crystal under the low argon gas consumption; Can reduce electric power consumption and argon gas consumption significantly, shorten the growth cycle of silicon single-crystal, reduce the growth cost.
The device of under the low argon gas consumption of reduce power consumption, producing czochralski silicon monocrystal that the utility model provides mainly comprises well heater, pod, plumbago crucible, insulation cover, heat-preservation cylinder, curing heat preservation carbon felt, furnace bottom platen, union lever.Described pod comprises first pod, second pod, the 3rd pod and the 4th pod.
Graphite the 4th pod is installed at the peripheral place of well heater, and the 3rd pod is installed on the 4th pod; The 4th pod is installed the graphite heat-preservation cylinder outward; The heat-preservation cylinder outside is installed and is solidified heat preservation carbon felt; The graphite heat-preservation cylinder is by the location of the bayonet socket on the graphite furnace base pressure dish, and graphite heat-preservation cylinder upper edge is used to locate insulation cover, and the second pod upper edge is by insulation cover bayonet socket location, and first pod is located by insulation cover; The graphite union lever supports plumbago crucible.
The peripheral 15mm of described well heater installs graphite the 4th pod in the place.
Described well heater separates lobe by 36 grades, and electrode position does not crack, and actual is 34 lobes.
Described well heater virtual height is in 430～475mm scope, and the well heater total height is 580mm.
Insulated tank is installed at the outer 15mm place of described the 4th pod.
Described doline the 3rd pod tilts to the body of heater axis with miter angle.
Described second pod is conventional water conservancy diversion shape, and fill with heat preservation carbon felt inside.
Described first pod keeps the angle identical with second pod, and the first pod vertical height is 40-400mm.
Described single crystal growing furnace burner hearth internal diameter is
The method of the device Grown by CZ Method silicon single-crystal of the low-cost growth for solar grade silicon that the utility model provides comprises steps such as charging, heating, crystal pulling: at first be in single crystal growing furnace, to feed; The fusion material, seed crystal falls in silicon temperature-stable fusion, descends then and draws thin footpath, and crystalline substance changes and lifts; Pass through isodiametric growth again, steps such as control furnace chamber pressure, crystalline pulling rate, argon gas flow velocity and brilliant rotary speed also comprise the molten brilliant crucible position of adjustment; Keep distance and crucible rotary speed between the second pod lower edge and the fusion liquid level; Regulate pulling rate, last, ending and cooling.
The characteristics of the utility model are described below:
The utility model is to announcing the obvious improvement of Grown by CZ Method silicon single-crystal device.The utility model has adopted and the different Φ 20 of domestic and foreign literature report, and " the P type of the growth diameter 200mm of graphite system; crystal orientation < 100>silicon single-crystal, particularly importantly the utility model can significantly reduce the power consumption of whole crystal pulling process under the prerequisite that guarantees monocrystalline.The utility model can also effectively reduce argon gas and consume (reducing 20%-70% approximately).The utility model adopts the shape and the local speed of compound four-part form pod adjustment argon gas stream; The silicon single crystal bar that the effective cooling of high speed argon gas stream that is blown into has been pulled out; Directly blow simultaneously the crystallization forward position of crystal growth; Suitably adjustment single crystal rod rate of cooling, increase thermograde promote rapid crystallization.The adjustment insulation construction reduces invalid thermal conduction and thermal radiation greatly, makes it can under the low argon gas amount of reduce power consumption, guarantee the growth of silicon single-crystal.Distance in the utility model between locking second pod lower edge and the molten silicon liquid level is 20mm; Accurately control the accurate flow at high speed of local argon gas thus; And then the crystallization latent heat of form the optimizing local argon flow field of distributing fast; And make the argon gas through here reach hot state of saturation; The argon gas unit of this saturation energy state through second pod with melt the silicon liquid level slit after volumetric expansion; But slowly getting into the 3rd pod under the traction that vacuum pump is found time and in this diminishing space, reaching energy once more saturated, avoiding this unit argon gas to advance the 4th pod and flow and disturb stable global temperature field (based on gas energy equation and numerical simulation) in the way then follow-up.Therefore the shape through changing pod and with the relative position of molten silicon and each parts, shorten the growth cycle of silicon single-crystal, reduced the growth cost.
Description of drawings
Fig. 1 is the graphite system and device diagrammatic cross-section of the low-cost growing silicon single crystal of the utility model vertical pulling method.
Fig. 2 is growth P < 100>type silicon single crystal power consumption and conventional equipment comparison diagram.
Fig. 3 is growth P < 100>type silicon single crystal cycle and conventional equipment comparison diagram.
Fig. 4 is growth P < 100>type silicon single crystal argon flow amount and conventional equipment comparison diagram.
Embodiment
The utility model combines accompanying drawing to describe in detail as follows:
The equipment that the utility model relates to the typical physical parameters of measuring silicon single-crystal is:
Conduction type: adopt the cold-hot probe method to record; Crystal orientation: use YX-ZH8 crystal orientation detector to adopt the GB/T11553-1997 standard to record; Resistivity; Use the SDY-3 resistivity measurement instrument employing GB/T1553-1997 standard of Guangzhou semi-conductor institute to record; Interstitial oxygen content uses the N1COLET-5700 instrument, adopts the GB/T11553-1997 standard to record; The displacement carbon content is used the N1COLET-5700 instrument, adopts the GB/T11553-1997 standard to record; Minority carrier life time uses 1000b type semilab minority carrier life time appearance, adopts the GB/T1553-1997 standard to record; Dislocation desity adopts the GBT11553-1997 standard to record;
As shown in the figure, 1 is first pod; The 2nd, insulation cover; 3 is second pods; The 4th, heat preservation carbon felt; The 5th, insulated tank; 6 is the 4th pods; The 7th, well heater; The 8th, solidify heat preservation carbon felt; The 9th, union lever; 10 is the 3rd pods; The 11st, the furnace bottom platen; The 12nd, plumbago crucible.
The utility model is that installation is the combined type graphite system of core with well heater 7 in single crystal growing furnace, and the 4th graphite pod 6 is installed at well heater 7 peripheral 15mm places; The 3rd pod 10, the three pods 10 are installed on the 4th pod 6 to tilt to the body of heater axis with miter angle; The 4th pod 6 outer 15mm install the graphite heat-preservation cylinder; Heat-preservation cylinder 5 outsides are installed and are solidified heat preservation carbon felt 8; Graphite heat-preservation cylinder 5 is by the location of the bayonet socket on the graphite furnace base pressure dish 11, and graphite heat-preservation cylinder 5 upper edges are used to locate insulation cover 2, the second pods 3 upper edges by insulation cover 2 bayonet sockets location, fills with heat preservation carbon felt 4 in second pod 3, and first pod 1 is by insulation cover 2 location.Graphite union lever 9 supports plumbago crucible 12.
Well heater 7 separates lobe by 36 grades, and electrode position does not crack, and actual is 34 lobes, and well heater 7 virtual heights are in 430～475mm scope, and well heater 7 total heights are 580mm.Second pod 3 is conventional water conservancy diversion shape, and is inner with heat preservation carbon felt 4 fillings, and first pod 1 keeps tilting with 77 identical degree with second pod 3, and the vertical height of first pod 1 is 40-400mm.
The operational process that the method for the utility model growth for solar grade silicon comprises comprises steps such as charging, heating, crystal pulling, at first is in single crystal growing furnace, to feed; The fusion material, seed crystal falls in silicon temperature-stable fusion, descends then and draws thin footpath, and crystalline substance changes and lifts; Pass through isodiametric growth again; Steps such as control furnace chamber pressure, crystalline pulling rate, argon gas flow velocity (argon flow amount is reduced to the 30-80% of the device of conventional Grown by CZ Method silicon single-crystal) and brilliant rotary speed; Also comprise the molten brilliant crucible position of adjustment, keep distance and crucible rotary speed between the second pod lower edge and the fusion liquid level, regulate pulling rate; At last, ending and cooling.
The measuring result who obtains according to the method described above:
Use the device of the utility model, use purity is 69 boron, with chunk polysilicon (B≤0.1ppba, D≤0.9ppba, the C≤0.5ppma) can under unit power consumption is spent less than 40, obtain following silicon single-crystal of solar level.
The Φ 200mm of 100 kilograms of growths of charging capacity, P type<100>crystal orientation, the resistivity of silicon single crystal bar is head ρ≤3 Ω cm, afterbody ρ>=0.4 Ω cm.Interstitial oxygen content is [Oi]≤17.5ppma, and the displacement carbon content is [Cs]≤0.5ppma, non-equilibrium minority carrier life time τ>=15 μ s, dislocation desity EPD≤500/cm2.
The result shows that the utility model device can make the solar level pulling of silicon single crystal under low power consumption, low argon gas consumption.Fig. 2-the 4th, the device comparing result of the utility model device and conventional Grown by CZ Method silicon single-crystal.Fig. 2 is growth P < 100>type silicon single crystal power consumption and conventional equipment comparison diagram.Fig. 3 is growth P < 100>type silicon single crystal cycle and conventional equipment comparison diagram.Fig. 4 is growth P < 100>type silicon single crystal argon flow amount and conventional equipment comparison diagram.
Claims (9)
1. the device of a growth for solar grade silicon; Mainly comprise single crystal growing furnace, well heater, pod, plumbago crucible, insulation cover, heat-preservation cylinder, curing heat preservation carbon felt, furnace bottom platen, union lever, it is characterized in that: described pod comprises first pod, second pod, the 3rd pod, the 4th pod; Graphite the 4th pod is installed at the peripheral place of well heater, and the 3rd pod is installed on the 4th pod; The 4th pod is installed the graphite heat-preservation cylinder outward; The heat-preservation cylinder outside is installed and is solidified heat preservation carbon felt; The graphite heat-preservation cylinder is by the location of the bayonet socket on the graphite furnace base pressure dish, and graphite heat-preservation cylinder upper edge is used to locate insulation cover, and the second pod upper edge is by insulation cover bayonet socket location, and first pod is located by insulation cover; The graphite union lever supports plumbago crucible.
2. device according to claim 1 is characterized in that: the peripheral 15mm of described well heater installs graphite the 4th pod in the place.
3. device according to claim 1 is characterized in that: described well heater separates lobe by 36 grades, and electrode position does not crack, and actual is 34 lobes.
4. device according to claim 1 is characterized in that: described well heater virtual height is in 430～475mm scope, and the well heater total height is 580mm.
5. device according to claim 1 is characterized in that: insulated tank is installed at the outer 15mm place of described the 4th pod.
6. device according to claim 1 is characterized in that: described doline the 3rd pod tilts to the body of heater axis with miter angle.
7. device according to claim 1 is characterized in that: described second pod is conventional water conservancy diversion shape, and fill with heat preservation carbon felt inside.
8. device according to claim 1 is characterized in that: described first pod keeps the angle identical with second pod, and the first pod vertical height is 40-400mm.
9. device according to claim 1 is characterized in that: described single crystal growing furnace burner hearth internal diameter is
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203453382U CN202246991U (en) | 2011-09-15 | 2011-09-15 | Device for growing solar grade silicon single crystal with low cost |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203453382U CN202246991U (en) | 2011-09-15 | 2011-09-15 | Device for growing solar grade silicon single crystal with low cost |
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| Publication Number | Publication Date |
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| CN202246991U true CN202246991U (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011203453382U Expired - Fee Related CN202246991U (en) | 2011-09-15 | 2011-09-15 | Device for growing solar grade silicon single crystal with low cost |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853485A (en) * | 2021-01-08 | 2021-05-28 | 浙江旭盛电子有限公司 | Silicon melting device and silicon melting method for producing czochralski silicon |
-
2011
- 2011-09-15 CN CN2011203453382U patent/CN202246991U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853485A (en) * | 2021-01-08 | 2021-05-28 | 浙江旭盛电子有限公司 | Silicon melting device and silicon melting method for producing czochralski silicon |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20170915 |
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| CF01 | Termination of patent right due to non-payment of annual fee |