CN206052206U - A kind of sapphire single-crystal furnace - Google Patents
A kind of sapphire single-crystal furnace Download PDFInfo
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- CN206052206U CN206052206U CN201621020377.4U CN201621020377U CN206052206U CN 206052206 U CN206052206 U CN 206052206U CN 201621020377 U CN201621020377 U CN 201621020377U CN 206052206 U CN206052206 U CN 206052206U
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- crucible
- radiation shield
- sapphire single
- heater
- crystal furnace
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Abstract
This utility model belongs to and prepares sapphire crystal field using kyropoulos, more particularly to a kind of sapphire single-crystal furnace, including the body of heater, the crucible of overlying crucible cover, heater, upper radiation shield, lateral reflection screen, lower radiation shield and the seed rod that are provided with bell, the crucible cover overlying heat protection screen, two heating plates are provided between the upper radiation shield and heat protection screen, described two heating plates are symmetrical set on seed rod both sides, and the bell is provided with vacuum component.This utility model reduces the deposition of volatile matter；The monitoring of infrared radiation thermometer and temperature sensor is realized simultaneously can, the two cooperates so that operator can more easily understand and manipulate thermal field；With the research and development of material, the decline of high temperature resistant temperature sensor cost so that infrared radiation thermometer is substituted completely so that kyropoulos realize that automatization is possibly realized.
Description
Technical field
This utility model belongs to and prepares sapphire crystal field using kyropoulos, more particularly to a kind of sapphire single-crystal furnace.
Background technology
What the growth course of kyropoulos sapphire crystal was completed mainly by heat conveying in control system, calandria
Heat is produced by electric current and crucible outer wall is reached with thermal-radiating form, crucible passes through conduction of heat and thermal-radiating shape again respectively
Heat is reached melt and crystal by formula, and crystal is, along seeded growth, cooling water to be connected with seed rod, can pass through thermal convection current
Form takes away the most heat of crystals.There is a range of thermograde in the melt and crystal in crucible, and one
Individual suitable thermograde determines the direction of transfer of heat and is conducive to the growth of crystal.
The long crystalline substance process of kyropoulos has：The processes such as charging, melting charge, seeding, expansion shoulder, isodiametric growth and ending, at this
In serial procedures, the seeding stage is the most key, in the seeding stage, Al in crucible2O3Liquation is in boiling stage, various in liquation
Impurity constantly volatilizees, and runs into low-temperature receiver, will be attached to above, due to endoscopy glass temperature it is relatively low, when open visor baffle plate when, stove
Interior impurity is adhered on endoscopy glass, slowly can be reduced using the definition of endoscopy glass for a long time, not aspect liquation face
The observation of color, as liquation different colours represent different temperature, visor is contaminated the judgement that can directly affect observer, leads
Cause seeding failure so that follow-up work cannot be completed.
Existing single crystal growing furnace, the form on body of heater use double-deck quartz glass, are provided with cold in the middle of double-deck quartz glass
But water circulation system.The weak point of existing window structure is：(1) in the middle of double-deck quartz glass, the flowing of water can produce ripple,
The accuracy for affecting observation sapphire single-crystal completely to generate；(2) up to 2100 DEG C of sapphire single-crystal furnace in-furnace temperature, once cooling
Water is uneven to may result in the broken of sight glass；(3) inside form be concave structure, this not only difficulty of processing it is very big, and
And the form observation that can be carried out all is unilateral observation, this just makes the observation of form have limitation, the operation not that sowed to seed crystal
It is convenient；(4) whole circumstances of crystal growth in stove can not be fully understood by by form.
Domestic present sapphire crystal growing furnace observation window, more using below upper bell, in stove, heat screen top is pacified
A shielding plate is filled, is passed through；Rotating mechanism above bell blocks and exposes observation window, and this apparatus structure is complicated, and in stove
Interior high temperature to be born, is unfavorable for the sealing protection of shielding plate rotating mechanism, understands that the heat that shielding plate conduction comes up can have a strong impact on
The life-span of rotating mechanism sealing ring, or even in crystal growing furnace running, there is the situation of vacuum leak.
Existing single crystal growing furnace is primarily directed to the improvement of observation window, improves the structure of observation window, increases the quantity of observation window
Deng, but to causing the unsharp volatile matter of observation window to dabble very few.The meaning that quite some are cured the symptoms, not the disease.
Volatile matter is deposited, and volatile matter refers mainly to molybdenum, tungsten, melt and impurity therein etc..The crystal that is deposited on of volatile matter is given birth to
Cannot avoid in growth process, mainly be deposited at heat protection screen, pot cover and heater, due to the presence of volatile matter, give birth in crystal
The long starting stage, need higher heating power；And the crystal growth later stage, volatile matter causes the high insulating effect in body of heater, together
Under sample heating power, temperature can be raised, therefore, it is to obtain same crystal mass, then needs the bigger power range of decrease.
As under the high temperature conditions (1926 DEG C), the micro thermal decomposition of alumina melt discharges O2, calandria and crucible
There is following chemical reaction with oxygen in tungsten.
Mo+3/2O2=MoO3(gaseous state)；
W+3/2O2=WO3(gaseous state).
WO3Fusing point be 1469 DEG C, with the continuous growth of crystal, power is reduced, the temperature drop of upper heat protection screen middle
It is low to WO3Fusing point below, WO3Deposit herein.Volatile matter, can completely plugged window when 2kg or so is grown into.Now
Power is reduced to 827 DEG C or so in 70kW or so, temperature herein, MoO3Deposit herein.In crystal growth early stage, volatile matter
Deposition can block up part observation window, reduce top heat dissipation capacity, cause crystal shouldering or even cannot produce melt back；In crystal growth
Later stage, volatile matter can block up observation window completely, cause in-furnace temperature to raise, and crucible bottom thermograde reduces, and easily causes crystalline substance
The too fast growth of body afterbody, produces viscous pot and bubble, affects crystal overall quality.
Al2O3Under the conditions of high temperature, coarse vacuum volatilize, formed steam, due to the temperature at pot cover it is relatively low, Al2O3Steam is sent out
It is raw to condense, form Al2O3Crystal.The main component of the volatile matter at pot cover is Al2O3, as heat conductivity is relatively low, directly result in
The capacity of heat transmission at pot cover is reduced so that the thermal field control in crucible is difficult.Volatile matter is deposited at heating rod top (low-temperature space),
Main component is MoO3And WO3Mixture.It is as the main component of volatile matter deposition is tungsten, consistent with the component of heater,
It is metal good conductor.After heating rod is thicker, the resistance of heating rod is caused to reduce, caloric value is reduced.In same growth conditionss
Under, bigger heating power is needed, energy loss is caused.
How adverse effect that volatile matter deposition bring is reduced, and the automatization for how improving sapphire preparation process is to put
A difficult problem in face of people.
Utility model content
As known from the above, under current working condition, the generation of volatile matter is inevitable, how to mitigate volatile matter
How the adverse effect brought, lift automatic control level, is that this utility model attempts problem to be solved.
This utility model is intended providing a kind of sapphire single-crystal furnace, including being provided with the body of heater 1 of bell 11, overlying crucible cover 2
Crucible 3, heater 4, upper radiation shield 5, lateral reflection screen 6, lower radiation shield 7 and seed rod 8,2 overlying heat protection screen 9 of the crucible cover,
Two heating plates 10 are provided between the upper radiation shield 5 and heat protection screen 9, described two heating plates (10) are on seed rod (8) both sides
It is symmetrical set, the bell 11 is provided with vacuum component 12.
Further, the crucible 3 is tungsten crucible, welding molybdenum crucible or sintering molybdenum crucible.Preferably tungsten crucible, because
For tungsten fusing point higher than molybdenum fusing point, it is not easy to vaporization at high temperature is out reacted with oxygen；Conventional at present is sintering molybdenum earthenware
Crucible, but the performance of molybdenum crucible is welded better than sintering molybdenum crucible, the welding molybdenum crucible of same thickness and making for sintering molybdenum crucible tolerance
As with temperature with use time length being, the even significantly larger than use time of sintered crucible having.This is because sintering
Density it is high again, also less than all of consistency of molybdenum plate for passing through repeatedly rolling, therefore weld the molybdenum in molybdenum crucible more not
It is readily volatilized, and then MoO is produced with oxygen reaction2。
Further, the lateral reflection screen 6, lower radiation shield 7 are tungsten radiation shield or tungsten radiation shield.In tungsten radiation shield
The quality accounting 50% of tungsten.The probability for comparing molybdenum radiation shield, tungsten radiation shield and tungsten radiation shield vaporization at high temperature is lower, more not
Volatile matter deposition is produced easily.
Further, the quantity of the vacuum component 12 is two, is symmetrical arranged.In sapphire single-crystal furnace, thermal field divides
Cloth, control it is critical that, for the change done by single crystal growing furnace, it is noted that keeping in balance, not so easily change thermal field
Distribution, in turn results in the adverse effects such as uneven, the viscous pot of expansion shoulder.
Further, the vacuum component 12 is provided with dust pelletizing system.After volatile matter is produced, when reaching finite concentration, take out
Vacuum, volatile matter is taken away from body of heater, does not allow volatile matter to contact, adhere on observation window as much as possible；Why setting is removed
Dirt system, what is contained in being because volatile matter is metal-oxide, if processing not in time, easily blocks the unit of vacuum component
Device, is unfavorable for continuous production.
Further, the crucible 3, crucible cover 2, upper radiation shield 5 and heater 4 are provided with resistant to elevated temperatures temperature sensor.
, during seeding, the control to temperature is particularly important for sapphire, and the setting of high temperature resistant temperature sensor can help operator
Member understands the thermal field of crucible 3, crucible cover 2, upper radiation shield 5 and heater 4 in time, while crucible cover 2, the middle part of upper radiation shield 5
Top with heater 4 is the position for easily depositing volatile matter, has the help of temperature sensor, and operator can be not
On the premise of affecting seeding progress, in time the temperature at above-mentioned position is intervened, and then reduce the deposition of volatile matter.
Further, the heater 4 is in parallel with heating plate 10.It is to realize to heating why to be arranged to parallel connection
The independent control of piece 10, and then realize reducing upper radiation shield 5 and the temperature adjustment of heat protection screen 9 deposition of volatile matter.
Further, the heating plate 10 can be moved up and down.It is to operate for convenience that heating plate 10 can be moved up and down
Personnel specifically control the temperature of heat protection screen 9 and upper radiation shield 5, when needing to adjust the thermal field of heat protection screen 9, can move heating plate
10 make which closer to heat protection screen 9, and when needing to adjust the thermal field of upper radiation shield 5, can move heating plate 10 makes which closer to upper
Radiation shield 5.
Compared with prior art, this utility model has the advantages that：
(1) deposition of volatile matter on radiation shield is reduced, the time of observation is extended；
(2) reduce the deposition of the volatile matter on crucible cover so that the control to thermal field in crucible is relatively easy to；
(3) deposition of volatile matter on heater is reduced, loss is reduced；
(4) monitoring of infrared radiation thermometer and temperature sensor can be realized simultaneously, and the two cooperates so that operator
Can more easily understand and manipulate thermal field；With the research and development of material, the decline of high temperature resistant temperature sensor cost so that infrared
Temperature measurer is substituted completely so that kyropoulos realize that automatization is possibly realized.
Description of the drawings
Fig. 1：Structural representation of the present utility model；
In figure：1st, body of heater；2nd, crucible cover；3rd, crucible；4th, heater；5th, upper radiation shield；6th, lateral reflection screen；7th, lower reflection
Screen；8th, seed rod；9th, heat protection screen；10th, heating plate；11st, bell；12nd, vacuum component.
Specific embodiment
Embodiment one
A kind of sapphire single-crystal furnace, including:
It is provided with the body of heater 1 of bell 11, bell 11 is provided with figure the observation window depending on not going out；The bell 11 is provided with vacuum
Part 12, the quantity of the vacuum component 12 is two, and the centrosymmetry around bell is arranged, and the vacuum component 12 is provided with and removes
Dirt system；The vacuum component coordinates vacuometer to use, and determines the need for evacuation according to the sensing of vacuometer pointer；If
Vacuometer point to it is inaccurate or if being not provided with vacuometer, can according to the change of the response time of crystal or thermal field come
Decide whether extracting vacuum.
The crucible 3 of overlying crucible cover 2, crucible is tungsten crucible, and the pillar below crucible is tungsten pillar, in order to be incubated crucible cover
2 overlying heat protection screens 9；
Heater 4, heater 4 are shaped as common cage type；
Upper radiation shield 5, lateral reflection screen 6 and lower radiation shield 7, using tungsten radiation shield；
Seed rod 8；
Two heating plates 10 that can be moved up and down, described two heating are provided between the upper radiation shield 5 and heat protection screen 9
Piece 10 is symmetrical set on 8 both sides of seed rod, and described two heating plates 10 should be tried one's best away from seed rod 8, is reduced to seed rod 8
The impact of temperature, the heater 4 and heating plate 10 are parallel connection, and operator can control heater 4 and heating plate 10 respectively
Open and close；
The crucible 3, crucible cover 2, upper radiation shield 5 and heater 4 are provided with resistant to elevated temperatures temperature sensor.
Claims (8)
1. a kind of sapphire single-crystal furnace, including being provided with the body of heater (1) of bell (11), the crucible (3) of overlying crucible cover (2), heating
Device (4), upper radiation shield (5), lateral reflection screen (6), lower radiation shield (7) and seed rod (8), it is characterised in that：The crucible cover (2)
Overlying heat protection screen (9), is provided with two heating plates (10), described two heating plates between the upper radiation shield (5) and heat protection screen (9)
(10) it is symmetrical set on seed rod (8) both sides, the bell (11) is provided with vacuum component (12).
2. a kind of sapphire single-crystal furnace according to claim 1, it is characterised in that：The crucible (3) is tungsten crucible, welding
Molybdenum crucible or sintering molybdenum crucible.
3. a kind of sapphire single-crystal furnace according to claim 1, it is characterised in that：The lateral reflection screen (6), lower radiation shield
(7) it is tungsten radiation shield or tungsten radiation shield.
4. a kind of sapphire single-crystal furnace according to claim 1, it is characterised in that：The quantity of the vacuum component (12) is
Two, it is symmetrical arranged.
5. a kind of sapphire single-crystal furnace according to claim 1, it is characterised in that：The vacuum component (12) is provided with dedusting
System.
6. a kind of sapphire single-crystal furnace according to claim 1, it is characterised in that：The crucible (3), crucible cover (2), on
Radiation shield (5) and heater (4) are provided with resistant to elevated temperatures temperature sensor.
7. a kind of sapphire single-crystal furnace according to claim 1, it is characterised in that：The heater (4) and heating plate
(10) it is parallel connection.
8. a kind of sapphire single-crystal furnace according to claim 1, it is characterised in that：The heating plate (10) can on move down
It is dynamic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621020377.4U CN206052206U (en) | 2016-08-30 | 2016-08-30 | A kind of sapphire single-crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621020377.4U CN206052206U (en) | 2016-08-30 | 2016-08-30 | A kind of sapphire single-crystal furnace |
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| Publication Number | Publication Date |
|---|---|
| CN206052206U true CN206052206U (en) | 2017-03-29 |
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ID=58374235
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621020377.4U Active CN206052206U (en) | 2016-08-30 | 2016-08-30 | A kind of sapphire single-crystal furnace |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222747A (en) * | 2016-08-30 | 2016-12-14 | 天通银厦新材料有限公司 | A kind of sapphire single-crystal furnace |
| CN107858534A (en) * | 2017-11-23 | 2018-03-30 | 哈尔滨奥瑞德光电技术有限公司 | A kind of processing sapphire crystallization furnace tungsten calandria simultaneously reclaims the method and apparatus of metal molybdenum |
| CN109675339A (en) * | 2019-02-03 | 2019-04-26 | 孙强 | Device for making and method for Chinese medicinal ingredients test liquid |
| CN116949557A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Thermal insulation structure and sapphire crystal growth furnace |
-
2016
- 2016-08-30 CN CN201621020377.4U patent/CN206052206U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222747A (en) * | 2016-08-30 | 2016-12-14 | 天通银厦新材料有限公司 | A kind of sapphire single-crystal furnace |
| CN107858534A (en) * | 2017-11-23 | 2018-03-30 | 哈尔滨奥瑞德光电技术有限公司 | A kind of processing sapphire crystallization furnace tungsten calandria simultaneously reclaims the method and apparatus of metal molybdenum |
| CN109675339A (en) * | 2019-02-03 | 2019-04-26 | 孙强 | Device for making and method for Chinese medicinal ingredients test liquid |
| CN116949557A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Thermal insulation structure and sapphire crystal growth furnace |
| CN116949557B (en) * | 2023-09-18 | 2024-02-13 | 内蒙古晶环电子材料有限公司 | Thermal insulation structure and sapphire crystal growth furnace |
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