CN102312285A - External continuous feeding mechanism for monocrystal furnace - Google Patents
External continuous feeding mechanism for monocrystal furnace Download PDFInfo
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- CN102312285A CN102312285A CN201110186157A CN201110186157A CN102312285A CN 102312285 A CN102312285 A CN 102312285A CN 201110186157 A CN201110186157 A CN 201110186157A CN 201110186157 A CN201110186157 A CN 201110186157A CN 102312285 A CN102312285 A CN 102312285A
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Abstract
The invention relates to auxiliary equipment for Czochralski silicon growth equipment, and aims to provide an external continuous feeding mechanism for a monocrystal furnace. The feeding mechanism includes a bunker with a seal cover; a discharge valve is arranged on bunker bottom; the discharge valve is connected to a discharge inner pipe, which is sleeved by a discharge outer pipe; the discharge outer pipe is connected with a transmission mechanism for realizing telescoping of the discharge outer pipe along a discharge inner pipe extending direction, and the discharge inner pipe, the discharge outer pipe and the transmission mechanism are all arranged inside an airtight cylinder; an airtight cylinder bottom is equipped with a globe valve or a flap valve; an feeding inlet is arranged on an upper part of a main furnace chamber of the monocrystal furnace, and is connected with the globe valve or the flap valve in an airtight way. According to the invention, material charging can be realized without furnace halt to facilitate continuous growth of multiple crystals and save time require by furnace halt, furnace rubbing, charging, vacuum-pumping and material melting, so as to substantially increase production efficiency and utilization rate of a quartz crucible and lower costs effectively.
Description
Technical field
The present invention relates to the utility appliance of czochralski silicon monocrystal growth apparatus, particularly a kind of outside continuous dosing mechanism that is used for single crystal growing furnace.
Background technology
Traditional straight pulling silicon single crystal furnace is required to be the production of preparing a new stove and does a lot of numerous and diverse previous works after accomplishing a stove raw material crystal pulling and producing, and comprises the blowing out cooling, wipes stove, feeds, vacuumizes, changes operation such as material.A lot of times have been wasted in the previous work that these are numerous and diverse.Because each production cycle charging capacity is many more, it is heavy more to draw crystal, and unit source is more little, and efficient is also high more.Since the crystal for straight drawing monocrystal growth stove comes into operation, existing 93 years so far, but such situation fails effectively to be improved all the time.In addition, self has work-ing life quartz crucible, how to improve single stove charging capacity to greatest extent in its length of life, improves the quartz crucible utilization ratio, brings serious puzzlement for related production enterprise always.
Summary of the invention
The technical problem that the present invention will solve is, overcomes deficiency of the prior art, and a kind of outside continuous dosing mechanism that is used for single crystal growing furnace is provided.
Be the technical solution problem; Scheme of the present invention is: use small one and large one two silica tubes as feeding channel, big silica tube is enclosed within outside the little silica tube, through stretching of the big silica tube of transmission mechanism control; Ball valve or flap valve are used for isolating main stove and batch charging mechanism; Can accomplish vacuumizing and applying argon gas batch charging mechanism separately, dispensing valve is used for throwing in polycrystalline silicon material, through control dispensing valve aperture control polycrystalline silicon material dispensing speed.
The invention provides a kind of outside continuous dosing mechanism that is used for single crystal growing furnace, comprise the feed bin of a with closure, dispensing valve is established in the feed bin bottom; Dispensing valve is connected to pipe in the blowing, the sheathed blowing outer tube in outside of pipe in the blowing; The blowing outer tube is used to realize that with one the blowing outer tube is connected along the flexible transmission rig of pipe extending direction in the blowing, and pipe, blowing outer tube and transmission rig all are located in the airtight tube in the blowing; A ball valve or flap valve are established in airtight tube bottom, and the main furnace chamber top of single crystal growing furnace is provided with a dog-house, and dog-house and ball valve or flap valve are tightly connected.
As a kind of improvement, said sealing cover is realized sealing through O type circle and feed bin.
As a kind of improvement, pipe or blowing outer tube are silica tube in the said blowing.
As a kind of improvement, said dispensing valve, ball valve or flap valve are realized valve opening and closing control by pneumatics.
As a kind of improvement, said transmission rig comprises trip switch, stepper-motor and transmission rope.
As a kind of improvement, the interface of at least one band valve is set on the wall of said airtight tube.
As a kind of improvement, the dog-house on said main furnace chamber top is oblique offering, and makes interior pipe of blowing and blowing outer tube and vertical direction be an angle.
As a kind of improvement, said blowing outer tube is along after the pipe extending direction stretches out and arrives spacing point in the blowing, and blowing outer tube end-to-end distance is from the inner bath surface 50mm～200mm of main furnace chamber.
As a kind of improvement; The structure of said flap valve is: a side of the inner valve plate of flap valve is movably connected on rotation axis; Valve plate is realized action by pneumatics control: airtight tube is communicated with main furnace chamber during open mode, realizes sealing through the O type circle on the valve plate during closing condition.
The invention has the beneficial effects as follows:
The present invention can realize charging under the situation that does not need blowing out, so that many crystal of continuous growth, saved the blowing out cooling, wipe stove, feeded, vacuumize, change the required time of step such as material, has significantly improved production efficiency, improves the quartz crucible utilization ratio.Through test, behind employing the present invention, can realize that single stove draws 3 above monocrystalline, the separate unit single crystal growing furnace is annual, and therefore increasing effective run time can reach 500 hours, and therefore can enhance productivity at least reaches more than 8%.Single stove monocrystalline output is brought up to more than the 180kg by 80kg, and the plumbago crucible effective storage life increases by 80%, and the quartz crucible service efficiency improves more than 200%, and unit production capacity power consumption is saved and surpassed 30%, effectively reduces cost.
Description of drawings
Fig. 1 is the synoptic diagram that possesses the single crystal growing furnace of outside continuous dosing mechanism;
Synoptic diagram when Fig. 2 is single crystal growing furnace among Fig. 1 reinforced;
Reference numeral: 1 feed bin, pipe in 2 dispensing valves, 3 blowings, 4 transmission rigs, 5 airtight tubes, 6 blowing outer tubes, 7 pneumatics, two, 8 interfaces, 9 flap valves, 10O type circle one, 11 main furnace chamber, 12 pneumatics, one, 13 sealing cover, 14O type circle two
Embodiment
Carry out detailed presentations below in conjunction with the accompanying drawing specific embodiments of the invention.
The outside continuous dosing mechanism that is used for single crystal growing furnace among the present invention comprises the feed bin 1 of a with closure 13, middlely is connected and sealed with O type circle 2 14, and dispensing valve 2 is established in the bottom; Feed bin 1 is used to take up polycrystalline silicon material, and single takes up the polycrystalline silicon material gross weight and is not less than 30kg.
Dispensing valve 2 is through pneumatics one 12 control blowing amounts, the blowing outer tube 6 of the sheathed quartzy material in outside of pipe 3 in the blowing; Blowing outer tube 6 is used to realize that with one blowing outer tube 6 is connected along the flexible transmission rig 4 of pipe 3 extending directions in the blowing.Transmission rig 4 comprises trip switch, stepper-motor and transmission rope, can adopt conventional techniques to realize.Pipe 3, blowing outer tube 6 and transmission rig 4 all are located in the airtight tube 5 in the blowing, and a flap valve 9 is established in airtight tube 5 bottoms, have 0 type circle 1 to realize being tightly connected between airtight tube 5 and the main furnace chamber 11 on the flap valve; The interface 8 of band valve is set on the wall of airtight tube 5, is used to vacuumize and applying argon gas.
The single crystal growing furnace that matches with it, its main furnace chamber top is provided with a dog-house, and the flap valve 9 of dog-house and airtight tube 5 bottoms is tightly connected.Because dog-house is oblique offering, make interior pipe 3 of blowing and blowing outer tube 6 be an angle with vertical direction.
The method of use of the outside continuous dosing of single crystal growing furnace mechanism comprises:
Silicon liquid is discontented with in the time of need feeding in raw material in the quartz crucible, at first airtight tube 5 is repeated to vacuumize and applying argon gas operation twice, regulates gaseous tension in the airtight tube 5, makes it identical with main furnace chamber 11 gaseous tensions.Come the flap valve 9 of the airtight tube of controlled opening 5 bottoms through pneumatics 27; Start transmission rig 4 make blowing outer tube 6 in blowing, manage end-to-end distance that 3 extending directions extend out to main furnace chamber 11 blowing outer tubes 6 from bath surface 50mm～200mm apart from the time, close transmission rig 4 and make blowing outer tube 6 stop decline.Open dispensing valve 2, and control the rate of feeding of polycrystalline silicon material through the aperture of pneumatics one 12 control dispensing valves 2.Feed intake reach plan weight after, close dispensing valve 2, start transmission rig 4 with in the airtight tube 5 of blowing outer tube 6 withdrawals, close flap valve 9, accomplish the process that feeds intake.
Claims (9)
1. the outside continuous dosing mechanism that is used for single crystal growing furnace comprises the feed bin of a with closure, and dispensing valve is established in the feed bin bottom; It is characterized in that dispensing valve is connected to pipe in the blowing, the sheathed blowing outer tube in outside of pipe in the blowing; The blowing outer tube is used to realize that with one the blowing outer tube is connected along the flexible transmission rig of pipe extending direction in the blowing, and pipe, blowing outer tube and transmission rig all are located in the airtight tube in the blowing; A ball valve or flap valve are established in airtight tube bottom, and the main furnace chamber top of single crystal growing furnace is provided with a dog-house, and dog-house and ball valve or flap valve are tightly connected.
2. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1 is characterized in that said sealing cover is realized sealing through O type circle and feed bin.
3. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1 is characterized in that pipe or blowing outer tube are silica tube in the said blowing.
4. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1 is characterized in that said dispensing valve, ball valve or flap valve are realized valve opening and closing control by pneumatics.
5. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1 is characterized in that said transmission rig comprises trip switch, stepper-motor and transmission rope.
6. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1 is characterized in that, the interface of at least one band valve is set on the wall of said airtight tube.
7. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1 is characterized in that the dog-house on said main furnace chamber top is oblique offering, and makes that pipe and blowing outer tube and vertical direction are an angle in the blowing.
8. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1 is characterized in that, after said blowing outer tube stretched out and arrives spacing point along pipe extending direction in the blowing, blowing outer tube end-to-end distance was from the inner bath surface 50mm～200mm of main furnace chamber.
9. the outside continuous dosing mechanism that is used for single crystal growing furnace according to claim 1; It is characterized in that; The structure of said flap valve is: a side of the inner valve plate of flap valve is movably connected on rotation axis; Valve plate is realized action by pneumatics control: airtight tube is communicated with main furnace chamber during open mode, realizes sealing through the O type circle on the valve plate during closing condition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110186157.4A CN102312285B (en) | 2011-07-04 | 2011-07-04 | External continuous feeding mechanism for monocrystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110186157.4A CN102312285B (en) | 2011-07-04 | 2011-07-04 | External continuous feeding mechanism for monocrystal furnace |
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| Publication Number | Publication Date |
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| CN102312285A true CN102312285A (en) | 2012-01-11 |
| CN102312285B CN102312285B (en) | 2014-02-19 |
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| CN201110186157.4A Active CN102312285B (en) | 2011-07-04 | 2011-07-04 | External continuous feeding mechanism for monocrystal furnace |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618919A (en) * | 2012-03-13 | 2012-08-01 | 杭州奔博科技有限公司 | Charging device for single crystal furnace |
| CN103451722A (en) * | 2013-08-06 | 2013-12-18 | 浙江晶盛机电股份有限公司 | External continuous feeder capable of being shared by multiple coil bases |
| CN104264229A (en) * | 2014-10-09 | 2015-01-07 | 河北晶龙阳光设备有限公司 | Online doping device for single crystal furnace |
| CN108103568A (en) * | 2017-12-20 | 2018-06-01 | 江苏拜尔特光电设备有限公司 | The automatic feeding device and its operating method of single crystal growing furnace |
| CN108326016A (en) * | 2018-04-11 | 2018-07-27 | 河北瑞塞可环保科技有限责任公司 | A kind of production method and system handling kitchen garbage using black soldier flies |
| CN108728902A (en) * | 2017-04-18 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of polysilicon automatic feed system and its feed process |
| CN109440184A (en) * | 2018-12-19 | 2019-03-08 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
| CN109989106A (en) * | 2017-12-31 | 2019-07-09 | 江苏拜尔特光电设备有限公司 | Dual rotary pulling apparatus and its switching method |
| CN112342610A (en) * | 2020-10-31 | 2021-02-09 | 常州松瓷机电有限公司 | Novel external charging machine of single crystal furnace |
| CN112522778A (en) * | 2020-11-30 | 2021-03-19 | 晶科能源有限公司 | Feeding device and single crystal furnace |
| CN113249779A (en) * | 2021-04-20 | 2021-08-13 | 上海新昇半导体科技有限公司 | Flap valve, crystal pulling furnace, feeding method and crystal pulling method |
| CN113584573A (en) * | 2021-08-17 | 2021-11-02 | 江苏神汇新型陶瓷材料科技有限公司 | External impurity-absorbing feeding method for single crystal furnace |
| TWI827440B (en) * | 2022-02-17 | 2023-12-21 | 大陸商中環領先半導體材料有限公司 | Feeding pipe, single crystal growth apparatus and feeding method thereof |
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| CN202202013U (en) * | 2011-07-04 | 2012-04-25 | 浙江晶盛机电股份有限公司 | Externally continuous feeding mechanism for single crystal furnace |
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| CN1153230A (en) * | 1995-10-31 | 1997-07-02 | Memc电子材料有限公司 | Solid material delivery system for furnace |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618919A (en) * | 2012-03-13 | 2012-08-01 | 杭州奔博科技有限公司 | Charging device for single crystal furnace |
| CN102618919B (en) * | 2012-03-13 | 2015-05-06 | 杭州奔博科技有限公司 | Charging device for single crystal furnace |
| CN103451722A (en) * | 2013-08-06 | 2013-12-18 | 浙江晶盛机电股份有限公司 | External continuous feeder capable of being shared by multiple coil bases |
| CN104264229A (en) * | 2014-10-09 | 2015-01-07 | 河北晶龙阳光设备有限公司 | Online doping device for single crystal furnace |
| CN108728902A (en) * | 2017-04-18 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of polysilicon automatic feed system and its feed process |
| CN108103568A (en) * | 2017-12-20 | 2018-06-01 | 江苏拜尔特光电设备有限公司 | The automatic feeding device and its operating method of single crystal growing furnace |
| CN109989106A (en) * | 2017-12-31 | 2019-07-09 | 江苏拜尔特光电设备有限公司 | Dual rotary pulling apparatus and its switching method |
| CN108326016A (en) * | 2018-04-11 | 2018-07-27 | 河北瑞塞可环保科技有限责任公司 | A kind of production method and system handling kitchen garbage using black soldier flies |
| CN109440184A (en) * | 2018-12-19 | 2019-03-08 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
| CN112342610A (en) * | 2020-10-31 | 2021-02-09 | 常州松瓷机电有限公司 | Novel external charging machine of single crystal furnace |
| CN112522778A (en) * | 2020-11-30 | 2021-03-19 | 晶科能源有限公司 | Feeding device and single crystal furnace |
| CN113249779A (en) * | 2021-04-20 | 2021-08-13 | 上海新昇半导体科技有限公司 | Flap valve, crystal pulling furnace, feeding method and crystal pulling method |
| CN113249779B (en) * | 2021-04-20 | 2022-03-15 | 上海新昇半导体科技有限公司 | Flap valve, crystal pulling furnace, feeding method and crystal pulling method |
| CN113584573A (en) * | 2021-08-17 | 2021-11-02 | 江苏神汇新型陶瓷材料科技有限公司 | External impurity-absorbing feeding method for single crystal furnace |
| TWI827440B (en) * | 2022-02-17 | 2023-12-21 | 大陸商中環領先半導體材料有限公司 | Feeding pipe, single crystal growth apparatus and feeding method thereof |
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Inventor after: Zhu Liang Inventor after: Cao Jianwei Inventor after: Qiu Minxiu Inventor after: Wang Wei Inventor after: Shen Xingchao Inventor before: Zhu Liang Inventor before: Cao Jianwei Inventor before: Qiu Minxiu Inventor before: Wang Wei Inventor before: Shen Xingchao |
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