CN102127804B - Bridgman-Stockbarge method single crystal growth furnace and application thereof - Google Patents
Bridgman-Stockbarge method single crystal growth furnace and application thereof Download PDFInfo
- Publication number
- CN102127804B CN102127804B CN 201110054634 CN201110054634A CN102127804B CN 102127804 B CN102127804 B CN 102127804B CN 201110054634 CN201110054634 CN 201110054634 CN 201110054634 A CN201110054634 A CN 201110054634A CN 102127804 B CN102127804 B CN 102127804B
- Authority
- CN
- China
- Prior art keywords
- furnace
- bell
- heater
- crystal growth
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a Bridgman-Stockbarge method single crystal growth furnace. The furnace comprises a furnace body with a closed cavity, a crucible and a vertical movement mechanism, wherein a central hole is formed on a furnace bottom plate of the furnace body and an insulating layer on the inner side of the furnace bottom plate and is communicated with the closed cavity; the vertical movement mechanism passes through the central hole and moves up and down along a central shaft of the furnace body; and when the vertical movement mechanism is hermetically connected with the furnace body, one end of the vertical movement mechanism stretching into the closed cavity is positioned at the upper end of the closed cavity and is connected and fixed with the crucible. By the Bridgman-Stockbarge method single crystal growth furnace, the insulating layer and a heating body can be effectively prevented from being touched when materials are fed into the crucible and the crucible discharges materials, the instable factor of a temperature field of the furnace body is eliminated, the reliability of the single crystal growth furnace is improved, the service life of the single crystal growth furnace is prolonged, the stability, reliability and repeatability of crystal growth are effectively improved, the production cost of crystals is reduced, and the furnace is suitable for growing various crystals.
Description
Technical field
The present invention relates to the growing technology field of crystal, more particularly, relate to a kind of Bridgman-Stockbarge method single crystal growth furnace and application thereof.
Background technology
Crystalline material especially all has vital effect in fields such as new forms of energy, photoelectric technology and microelectronics at the modern technologies Material Field, and the growth quality of crystal and cost etc. have become the restraining factors of its scale development and application.The growing technology of crystal mainly adopts crystal pulling method, kyropoulos, temperature gradient method, guided mode method, heat-exchanging method and falling crucible method etc., the growing technology of comprehensive above-mentioned various crystal, it is stable that falling crucible method has the temperature field, is easy to the advantages such as control, and the crystal internal stress that adopts Bridgman-Stockbarge method for growing to go out is little, it is cracked not to be prone to the stress relief type in the course of processing, crystal boundary can also be controlled, so that the utilising efficiency of crystal is high, so just is beneficial to the attenuating of tooling cost.When particularly stablizing in the temperature field, the dislocation desity in the crystal of employing Bridgman-Stockbarge method for growing is low, so falling crucible method has become a kind of crystal technique commonly used.But traditional monocrystal growing furnace still has the following disadvantages: Proper Design and structure are not easy to installation and maintenance, use inconvenient; The crucible input and output material tends to touch thermal insulation layer and the heating element in the body of heater, and thermal insulation layer and heating element can reduce greatly through intensity after the heat, often touch very easily and damage, so not only can destroy the stability of temperature field and the repeatability of technique, also can cause the normal life cycle of monocrystal growing furnace to shorten, will change heating element and inboard thermal insulation layer in average one month, greatly increase equipment cost.
Summary of the invention
Touch easily thermal insulation layer and heating element for the crucible input and output material that exists in the prior art, so that the problem that temperature unstable, a normal life cycle of body of heater shortens, the purpose of this invention is to provide a kind of Bridgman-Stockbarge method single crystal growth furnace and application thereof that thermal insulation layer and heating element is touched the crucible input and output material can effectively be avoided the time, to improve stability, the reproducibility and reliability of crystal growth, reduce the growth cost of crystal.
For achieving the above object, the technical solution used in the present invention is as follows:
Bridgman-Stockbarge method single crystal growth furnace provided by the invention, comprise the body of heater that is provided with airtight cavity, be provided with crucible in the airtight cavity, also comprise vertical movement mechanism, have centre hole on the thermal insulation layer of the drop-bottom of described body of heater and drop-bottom inboard, centre hole and airtight cavity connect, and described vertical movement mechanism is passed centre hole and moved up and down along the central shaft of body of heater; When described vertical movement mechanism was connected with body of heater is airtight, its end that stretches into airtight cavity was positioned at the upper end of airtight cavity and is connected and fixed with crucible.
Described monocrystal growing furnace also comprises adapting pipe, and described adapting pipe is located at the outside of body of heater and is connected with the lower end of body of heater.
Described vertical movement mechanism comprises lower bell, bell thermal insulation layer, support stick, tripod and elevator, described bell thermal insulation layer is located at lower bell top and is connected and fixed with it, the shape of described bell thermal insulation layer and the shape of centre hole are complementary, and the diameter of described lower bell is greater than the diameter of bell thermal insulation layer; Described support stick vertically passes lower bell and bell thermal insulation layer and is connected and fixed with them, and described tripod is located at the top of support stick and is connected and fixed with it; Described elevator is located at the below of support stick and is connected and fixed with it.
Described body of heater comprises bell, upper furnace and lower hearth from top to bottom, all adopts the airtight connection of Split type structure between described upper bell and upper furnace, upper furnace and lower hearth, lower hearth and the drop-bottom.
Described body of heater adopts hollow structure, the inner logical water coolant of hollow structure.
Described body of heater adopts stainless steel plate.
The thickness of described stainless steel plate is 10mm.
Bridgman-Stockbarge method single crystal growth furnace of the present invention can be used for the growth of sapphire, titanium jewel, YAG series laser crystal or scintillation crystal.
Compared with prior art, adopt Bridgman-Stockbarge method single crystal growth furnace of the present invention, in the time of can effectively avoiding the crucible input and output material to the shake-up of thermal insulation layer and heating element, eliminate a temperature labile factor of body of heater, improve the reliability of monocrystal growing furnace, prolong its work-ing life, stability, the reproducibility and reliability of the growth of Effective Raise crystal, and the growth cost of reduction crystal.
Description of drawings
Fig. 1 is a kind of structural representation of Bridgman-Stockbarge method single crystal growth furnace of the present invention.
Embodiment
Further specify technical scheme of the present invention below in conjunction with drawings and Examples.
Embodiment
See also shown in Figure 1: Bridgman-Stockbarge method single crystal growth furnace of the present invention, comprise body of heater 11 and vertical movement mechanism 13, be provided with airtight cavity 17 in the body of heater 11, the upper end of airtight cavity 17 is provided with crucible 12, have centre hole 16 on the thermal insulation layer 15 of the drop-bottom 114 of body of heater 11 and drop-bottom 114 inboards, centre hole 16 connects with airtight cavity 17, and vertical movement mechanism 13 is passed centre hole 16 and moved up and down along the central shaft of body of heater 11; Vertical movement mechanism 13 and body of heater are during 11 airtight the connection, and its end and crucible 12 that stretches into airtight cavity 17 is connected and fixed.Body of heater 11 comprises bell 111, upper furnace 112 and lower hearth 113 from top to bottom, all adopts the airtight connection of Split type structure between upper bell 111 and upper furnace 112, upper furnace 112 and lower hearth 113, lower hearth 113 and the drop-bottom 114.Upper bell 111 is connected in the top of upper furnace 112 by the bolt sealing joint, only need open later on bell 111 and just can check or safeguard convenient operation.Upper furnace 112 is connected in lower hearth 113 tops by bolt seal, when shove charge, upper bell 111 and upper furnace 112 is removed in the lump, carries out the installation of intraware with regard to enough spaces are arranged, and is convenient to install.Lower hearth 113 and drop-bottom 114 link together by bolt seal.Upper bell is split, and it connects by bolt seal with upper furnace, only need open later on bell when carrying out Inspection and maintenance, is convenient to safeguard.Vertical movement mechanism 13 comprises lower bell 131, bell thermal insulation layer 132, support stick 133, tripod 134 and elevator 135, bell thermal insulation layer 132 is located at lower bell 131 tops and is connected and fixed with it, the shape of the shape of bell thermal insulation layer 132 and centre hole 16 is complementary, and the diameter of lower bell 131 is greater than the diameter of bell thermal insulation layer 132; Support stick 133 vertically passes lower bell 131 and bell thermal insulation layer 132 and is connected and fixed with them, and tripod 134 is located at the top of support stick 133 and is connected and fixed with it; Elevator 135 is located at the below of support stick 133 and is connected and fixed with it.In the raw material charging stage of crystal growing process, start the crucible 12 that links to each other with support stick 133 by elevator 135 and drive lower bell 131 declines, after finishing, charging rises together again, so that lower bell 131 and drop-bottom 114 rapid-acting couplings are tightly connected, finish the crystal growth by crystal growth technique, treat that temperature is down to after the room temperature, the same startup with the support stick 133 continuous lower bells 131 of crucibles 12 drives by elevator 135 descends, finish the discharging of crystal, whole process is not touched heating unit 18 and the thermal insulation layer 19 in the body of heater 11, avoided the heating unit 18 of various aspects of performance decline after the process hot environment and the infringement of thermal insulation layer 19, reduced a temperature labile factor of body of heater, improve the reliability of monocrystal growing furnace, prolonged simultaneously the work-ing life of growth furnace, reduced equipment cost.Body of heater 11 adopts hollow structure, the inner logical water coolant of hollow structure, and it is the 10mm stainless steel plate that body of heater 11 adopts thickness.Monocrystal growing furnace also comprises adapting pipe 14, the outside of body of heater 11 is located in adapting pipe 14, one end of adapting pipe 14 is connected with the lower end of body of heater 11, the other end is connected with the vacuum pipe (not shown) of side, adapting pipe 14 is mainly used in integrated temperature, vacuumize and observing and controlling interface that atmosphere gas is filled, reduces the number of ports on the high temperature furnace wall, reduces potential safety hazard, the reliability of raising equipment also increases the convenience of overhauling simultaneously.
Monocrystal growing furnace of the present invention, can be widely used in the growth of multiple crystal, sapphire for example, the YAG series laser crystal, dystectic crystal such as titanium jewel, scintillation crystal, stability, the reproducibility and reliability of the growth of energy Effective Raise crystal are simultaneously because easy to operate, the not heating element of fragile body of heater and thermal insulation layer have reduced the growth cost of crystal.
Those of ordinary skill in the art will be appreciated that; above embodiment illustrates purpose of the present invention; and be not as limitation of the invention; as long as in essential scope of the present invention, all will drop in the protection domain of claim of the present invention variation, the modification of the above embodiment.
Claims (4)
1. a Bridgman-Stockbarge method single crystal growth furnace comprises the body of heater that is provided with airtight cavity, is provided with crucible in the airtight cavity, it is characterized in that: also comprise vertical movement mechanism and adapting pipe; Described body of heater comprises bell, upper furnace and lower hearth from top to bottom, all adopts the airtight connection of Split type structure between described upper bell and upper furnace, upper furnace and lower hearth, lower hearth and the drop-bottom; Have centre hole on the thermal insulation layer of the drop-bottom of described body of heater and drop-bottom inboard, centre hole and airtight cavity connect; Described body of heater adopts hollow structure, the inner logical water coolant of hollow structure; Described vertical movement mechanism comprises lower bell, bell thermal insulation layer, support stick, tripod and elevator, described bell thermal insulation layer is located at lower bell top and is connected and fixed with it, the shape of described bell thermal insulation layer and the shape of centre hole are complementary, and the diameter of described lower bell is greater than the diameter of bell thermal insulation layer; Described support stick vertically passes lower bell and bell thermal insulation layer and is connected and fixed with them, and described tripod is located at the top of support stick and is connected and fixed with it; Described elevator is located at the below of support stick and is connected and fixed with it; Described vertical movement mechanism is passed centre hole and is moved up and down along the central shaft of body of heater; When described vertical movement mechanism was connected with body of heater is airtight, its end that stretches into airtight cavity was positioned at the upper end of airtight cavity and is connected and fixed with crucible; Described adapting pipe is located at the outside of body of heater and is connected with the lower end of body of heater.
2. Bridgman-Stockbarge method single crystal growth furnace according to claim 1 is characterized in that: described body of heater employing stainless steel plate.
3. Bridgman-Stockbarge method single crystal growth furnace according to claim 2, it is characterized in that: the thickness of described stainless steel plate is 10mm.
4. the application of a Bridgman-Stockbarge method single crystal growth furnace claimed in claim 1 is characterized in that: be used for the growth of sapphire, titanium jewel, YAG series laser crystal or scintillation crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110054634 CN102127804B (en) | 2011-03-08 | 2011-03-08 | Bridgman-Stockbarge method single crystal growth furnace and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110054634 CN102127804B (en) | 2011-03-08 | 2011-03-08 | Bridgman-Stockbarge method single crystal growth furnace and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102127804A CN102127804A (en) | 2011-07-20 |
| CN102127804B true CN102127804B (en) | 2013-03-13 |
Family
ID=44266061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110054634 Active CN102127804B (en) | 2011-03-08 | 2011-03-08 | Bridgman-Stockbarge method single crystal growth furnace and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102127804B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014879A (en) * | 2011-09-23 | 2013-04-03 | 瑞晶应用材料科技股份有限公司 | Crystal growth furnace and action method thereof |
| CN106149051A (en) * | 2015-04-03 | 2016-11-23 | 中国科学院上海硅酸盐研究所 | The thermal control Bridgman method single-crystal growing apparatus of fluoride single crystal body and method |
| CN105350069A (en) * | 2015-12-24 | 2016-02-24 | 洛阳西格马炉业股份有限公司 | Sapphire crystal growing furnace and method for preparing sapphire crystal |
| CN107740186A (en) * | 2017-10-30 | 2018-02-27 | 中国科学院上海硅酸盐研究所 | A kind of large scale Yb, R:CaF2/SrF2Laser crystal and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311354A (en) * | 2008-04-29 | 2008-11-26 | 烁光特晶科技有限公司 | Process for controlling color of crystal |
| CN101323969A (en) * | 2008-07-24 | 2008-12-17 | 山东大学 | Multicomponent compound infrared crystal growth method |
| CN201224777Y (en) * | 2008-07-18 | 2009-04-22 | 成都东骏激光有限责任公司 | Large size sapphire falling crucible method growth furnace |
| CN101968308A (en) * | 2010-11-24 | 2011-02-09 | 中国矿业大学 | Crucible-lifting sintering furnace |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2002115062A (en) * | 2002-05-31 | 2004-02-20 | Корнинг Инкорпорейтид (Us) | METHOD FOR GROWING CALCIUM FLUORIDE SINGLE CRYSTALS |
| US7972527B2 (en) * | 2008-01-31 | 2011-07-05 | Trs Technologies, Inc. | Method of making ternary piezoelectric crystals |
-
2011
- 2011-03-08 CN CN 201110054634 patent/CN102127804B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311354A (en) * | 2008-04-29 | 2008-11-26 | 烁光特晶科技有限公司 | Process for controlling color of crystal |
| CN201224777Y (en) * | 2008-07-18 | 2009-04-22 | 成都东骏激光有限责任公司 | Large size sapphire falling crucible method growth furnace |
| CN101323969A (en) * | 2008-07-24 | 2008-12-17 | 山东大学 | Multicomponent compound infrared crystal growth method |
| CN101968308A (en) * | 2010-11-24 | 2011-02-09 | 中国矿业大学 | Crucible-lifting sintering furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102127804A (en) | 2011-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102877117B (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| CN102127804B (en) | Bridgman-Stockbarge method single crystal growth furnace and application thereof | |
| CN102677158A (en) | Kyropoulos crystal growing furnace with auxiliary chamber structure | |
| CN103060901B (en) | Preparation process for growing plurality of crystals through edge-defined film-fed crystal growth method | |
| CN103541008A (en) | Growth method and growth device of large-size gallium oxide single crystal | |
| CN101435106A (en) | Production process and apparatus for monocrystalline silicon rod | |
| CN102345157A (en) | Continuous re-feeding production method of solar-grade Czochralski silicon | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN204690162U (en) | A kind of feeding device for single crystal furnace | |
| CN103849928A (en) | Multiple-piece guided mode method growth technology for sapphire wafer | |
| CN206157273U (en) | Novel single crystal growing furnace | |
| CN102352529A (en) | Double-upper furnace body continuous charging silicon single crystal furnace and application method thereof | |
| CN103614765A (en) | Method of heating graphite to grow sapphire crystal | |
| CN101851782A (en) | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace | |
| CN202202012U (en) | Single crystal furnace having structure of double auxiliary furnace chambers | |
| CN215404647U (en) | Single crystal furnace feeding device | |
| CN203174222U (en) | Thermal field structure of polycrystalline silicon ingot casting furnace | |
| CN202297848U (en) | Silicon single crystal furnace with double upper furnace bodies | |
| CN105648530A (en) | Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line | |
| CN206188916U (en) | Vertical pulling single crystal cooling device | |
| CN102758245A (en) | Deoxidizing type single crystal furnace | |
| CN208965077U (en) | A kind of single crystal growing furnace silicon leakage prevention device | |
| CN102795620A (en) | Compression roasting furnace for producing high-purity graphite | |
| CN105177709A (en) | Irregular-shaped protective plate for semi-fused efficient production of G6 silicon ingot | |
| CN202945360U (en) | Hydraulic lifting type crucible supporting system for sapphire single crystal furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210118 Address after: Room j16043, building 2, 4268 Zhennan Road, Jiading District, Shanghai 200331 Patentee after: Shanghai de si Kai fluorine Photoelectric Technology Co.,Ltd. Address before: 200050 No. 1295 Dingxi Road, Shanghai, Changning District Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
|
| TR01 | Transfer of patent right |