CN105648530A - Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line - Google Patents
Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line Download PDFInfo
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- CN105648530A CN105648530A CN201610247970.0A CN201610247970A CN105648530A CN 105648530 A CN105648530 A CN 105648530A CN 201610247970 A CN201610247970 A CN 201610247970A CN 105648530 A CN105648530 A CN 105648530A
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- furnace chamber
- seed
- seed crystal
- crystal
- furnace
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
Abstract
The invention discloses a Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line. The crystal growth furnace is provided with a main furnace chamber and an auxiliary furnace chamber, wherein the furnace cover and the auxiliary furnace chamber are separated by an electric flapper valve; the electric flapper valve is controlled to be opened and closed by a furnace stage control system; the left side of the auxiliary furnace chamber is provided with a cooling valve, and the right side is provided with a furnace door for opening the auxiliary furnace chamber; and a seed rod is installed on a dip coating system, extends downwards to sequentially penetrate through the tube body, auxiliary furnace chamber and furnace cover, and finally reaches the inside of the main furnace chamber. The application method comprises the following steps: slowly opening the electric flapper valve, lifting the seed rod to the auxiliary furnace chamber, closing the electric flapper valve, cooling the inside of the auxiliary furnace chamber, replacing the seed crystals, vacuumizing, slowly lowering the seed rod, preheating the seed crystals, and seeding again. The crystal growth furnace can implement on-line seed crystal replacement, has the advantages of low energy consumption and low production cost, can effectively overcome the defect of production cycle delay caused by incapability of seeding due to the problems in the seed crystals, and ensures the production continuity.
Description
Technical field
The present invention relates to melt seed-grain method monocrystal growing furnace apparatus field, particularly relate to a kind of kyropoulos sapphire crystal growing furnace structure that can change seed crystal online.
Background technology
Sapphire crystal (is commonly called as corundum), have high-melting-point, high rigidity, heat conductivity good, from vacuum, ultraviolet, visible, near-infrared until mid-infrared all has high optical transmittance. It is widely used in blue-light semiconductor diode (LED) and the backing material of diode LD, almost throughout all substrate fields.
Current sapphire growing method mainly has czochralski method (CZ), EFG technique (EFG), kyropoulos (KY) and heat-exchanging method (HEM) etc. wherein kyropoulos is one of main stream approach being best suitable for growing large-size sapphire single-crystal of generally acknowledging in the world, the high purity aluminium oxide raw material that purity is 99.999% is placed in crucible and heats to melting, adjusting furnace temperature makes in crucible melt upper surface central temperature close to 2050 DEG C, decline seed rod, make seed rod contact bath surface, under the effect of seed rod inner cooling water, the melt of seed end is radially growing to surrounding with seed crystal for core while axially downwardly growing, this process is called seeding, growth by the seeding-expansion shoulder-isodiametric growth-sapphire crystal that finished up, the seeding stage is particularly significant, the growth of the whole crystal of relation and quality, and due to the proficiency level of technician in seeding process, the factors such as the volatilization of impurity, seed crystal can be caused to melt completely and cannot use, long crystalline substance is stopped, blowing out can only again fill seed crystal at present, again heat up. said method not only causes the loss of the energy, also can waste the precious time, the seriality that impact produces.
Summary of the invention
For overcoming the problems referred to above, the invention provides a kind of kyropoulos sapphire crystal growing furnace structure that can change seed crystal online, can realize changing seed crystal online, which solve the production cycle caused in tradition seeding process because of seed crystal problem long, the problem that energy consumption is high, effectively ensure that the seriality of production.
The technical solution adopted for the present invention to solve the technical problems is: a kind of kyropoulos sapphire crystal growing furnace that can change seed crystal online, including main furnace chamber, bell, secondary furnace chamber, electric gear plate valve, handle system, body, seed rod, stove bench control system and vacuum system.
Wherein, main furnace chamber is tightly connected by rubber ring and bell, and main furnace chamber side is connected to vacuum system, and this vacuum system is for carrying out evacuation inside main furnace chamber. Described bell is separated by electric gear plate valve with secondary furnace chamber, and stove bench control system is connected with electric gear plate valve circuit the opening and closing for controlling electric gear plate valve.
Being additionally provided with for the cooling valve of input cooling gas inside secondary furnace chamber in the side of secondary furnace chamber, opposite side is provided with the fire door for opening secondary furnace chamber. The upper end of secondary furnace chamber is sealed with body lower end by connecting device, and body upper end is connected with handle system. Described seed rod is arranged on handle system, and downwardly extends and sequentially pass through body, secondary furnace chamber and bell, eventually arrives at the inside of main furnace chamber; It is equiped with seed crystal in seed rod bottom. Body elastic compression is driven, it is preferred that above-mentioned tubular body is corrugated tube during for preventing lifting rod from moving up and down.
As a further improvement on the present invention, above-mentioned seed crystal is fixed by seed chuck, and seed chuck is connected with seed rod by seed crystal chuck. Preferably, seed rod is in the center of main furnace chamber and secondary furnace chamber; Upper end is connected with handle system, it is achieved lifting rod lifts.
The present invention compared with prior art, has an advantage in that:
The present invention is by being provided above secondary furnace chamber at main furnace chamber, and by electric gear plate valve, two chambers are separated, when seed crystal melts and completely maybe cannot use, first slowly open electric gear plate valve, then seed rod is promoted to secondary furnace chamber, then close electric gear plate valve, cool down in secondary furnace chamber, again seed crystal is replaced, last evacuation, slowly decline seed rod, preheating seed crystal, again seeding.
The present invention is capable of changing online seed crystal, has the advantage that energy consumption is low, production cost is low, meanwhile can be prevented effectively from because of seed crystal problem cannot seeding and delay the generation of production cycle, it is ensured that the seriality of production.
Below with reference to drawings and Examples, the present invention is described in detail.
Accompanying drawing explanation
Fig. 1 is present configuration schematic diagram.
Wherein, 1, handle system, 2, corrugated tube, 3, connecting device, 4, fire door, 5, cooling valve, 6, electric gear plate valve, 7, seed rod, 8, seed crystal chuck, 9, seed chuck, 10, seed crystal, 11, bell, 12, main furnace chamber, 13, secondary furnace chamber, 14, stove bench control system, 15, vacuum system.
Detailed description of the invention
Embodiment, refer to Fig. 1, a kind of kyropoulos sapphire crystal growing furnace that can change seed crystal online, has handle system 1, corrugated tube 2, connecting device 3, secondary furnace chamber 13, fire door 4, cooling valve 5, electric gear plate valve 6, seed rod 7, seed crystal chuck 8, seed chuck 9, seed crystal 10, bell 11, main furnace chamber 12, stove bench control system 14 and vacuum system 15.
Wherein, main furnace chamber 12 upper surface and bell 11 lower surface are by seal with elastometic washer, and main furnace chamber 12 side connects vacuum system 15, and this vacuum system is for carrying out evacuation inside main furnace chamber.
Bell 11 is separated by electric gear plate valve 6 with secondary furnace chamber 13 lower end, and this electric gear plate valve 6 is controlled to open and close by stove bench control system 14;
Being additionally provided with for the cooling valve 5 of input cooling gas inside secondary furnace chamber 13 in the left side of secondary furnace chamber 13, right side is provided with the fire door 4 for opening secondary furnace chamber.The upper end of secondary furnace chamber 13 is sealed with corrugated tube 2 lower end by connecting device 3, and corrugated tube 2 upper end is connected with handle system 1.
Seed rod 7 is arranged on handle system 1, and downwardly extends and sequentially pass through corrugated tube 2, secondary furnace chamber 13 and bell 11, eventually arrives at the inside of main furnace chamber 12.
Seed crystal 10 is fixed by seed chuck 9, and seed chuck 9 is connected with seed rod 7 by seed crystal chuck 8; Above-mentioned seed rod 7 is in the center of main furnace chamber 12 and secondary furnace chamber 13, and upper end is connected with handle system 1, it is achieved lifting rod lifts.
The using method of the present invention is as follows:
1, slowly being opened by electric gear plate valve 6 by stove bench control system 14, it opens speed is 3-5cm/min. The purpose that electric gear plate valve is slowly opened is in that, it is prevented that seed crystal is too fast and burst due to cold and hot difference variation.
2, being promoted to secondary furnace chamber 13 from main furnace chamber 12 by seed crystal by handle system 1, its pull rate is (1-10) mm/min.
3, by stove bench control system 14, electric gear plate valve 6 cuts out.
4, opening the cooling valve 5 being arranged on the secondary furnace chamber left side, pass into cooling gas, it is preferred to helium, flow is (1-10L/h), closes cooling valve 5 after 5-10min so that seed crystal 10, seed chuck 9 and seed crystal chuck 8 be Slow cooling in secondary furnace chamber 13.
5, open the fire door 4 being arranged on the secondary furnace chamber right side after 0.5-2h, rotate seed crystal chuck 8 counterclockwise, take off seed chuck 9, change seed crystal 10. Turn clockwise after replacing seed crystal chuck 8, and ensures the perpendicularity of seed crystal 10, closes fire door 4.
6, slowly open electric gear plate valve 6,0-5min electric gear plate valve 6 by stove bench control system 14 and open half, by stove bench control system 14, electric gear plate valve 6 is fully opened after 10-30min, utilize vacuum system 15 to the internal evacuation of main furnace chamber 12 afterwards. During operation, the opportunity of evacuation can also carry out when electric guard board valve portion is opened, and its principle is same as described above, does not repeat them here.
7, treat that vacuum is less than 1.0 �� 10-3Slow decline seed rod 7 after pa, the decrease speed of seed rod 7 is 0.5mm/min, treats that seed crystal 10 is from melt liquid level 20-30mm place, stops decline seed crystal, and preheating seed crystal is decline seed crystal 10 to melt liquid level, seeding again after 30 minutes.
The above is only the preferred embodiment to invention; not scope of invention is defined; therefore under the premise designing spirit without departing from the present invention; the equivalence that structure of the present invention, feature and principle are done by those of ordinary skill in the art changes or decoration, all should fall within the scope of protection of the present invention.
Claims (5)
1. can change a kyropoulos sapphire crystal growing furnace for seed crystal online, including main furnace chamber, bell, handle system, seed rod, seed crystal and vacuum system, it is characterised in that: also include body, secondary furnace chamber, electric gear plate valve and stove bench control system; Wherein, described main furnace chamber is tightly connected by rubber ring and bell, and main furnace chamber side is connected to vacuum system; Described bell is separated by electric gear plate valve with secondary furnace chamber, and stove bench control system is connected with electric gear plate valve circuit the opening and closing for controlling electric gear plate valve; Being additionally provided with for the cooling valve of input cooling gas inside secondary furnace chamber in the side of secondary furnace chamber, opposite side is provided with the fire door for opening secondary furnace chamber; The upper end of secondary furnace chamber seals with body lower end, and body upper end is connected with handle system; Described seed rod is arranged on handle system, and downwardly extends and sequentially pass through body, secondary furnace chamber and bell, eventually arrives at the inside of main furnace chamber;Described seed crystal is installed in seed rod bottom.
2. can change the kyropoulos sapphire crystal growing furnace of seed crystal as claimed in claim 1 online, it is characterised in that: described body is corrugated tube.
3. can change the kyropoulos sapphire crystal growing furnace of seed crystal as claimed in claim 1 or 2 online, it is characterised in that: it is additionally provided with connecting device between described secondary furnace chamber upper end and body lower end.
4. can change the kyropoulos sapphire crystal growing furnace of seed crystal as claimed in claim 3 online, it is characterised in that: also including the seed crystal chuck being arranged on seed rod lower end, this seed chuck puts and is provided with seed chuck, and described seed crystal is fixed on seed chuck.
5. can change the kyropoulos sapphire crystal growing furnace of seed crystal as claimed in claim 4 online, it is characterised in that: described seed rod is in the center of main furnace chamber and secondary furnace chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610247970.0A CN105648530A (en) | 2016-04-19 | 2016-04-19 | Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line |
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| CN201610247970.0A CN105648530A (en) | 2016-04-19 | 2016-04-19 | Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line |
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| CN201610247970.0A Pending CN105648530A (en) | 2016-04-19 | 2016-04-19 | Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109306519A (en) * | 2018-10-30 | 2019-02-05 | 天通银厦新材料有限公司 | A kind of sapphire crystal growing furnace and its seeding methods of carrying about standby seed crystal |
| WO2022052079A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth sapphire crystal growth furnace based on seed crystal replacement scheme |
| CN115570689A (en) * | 2022-11-18 | 2023-01-06 | 浙江晶盛机电股份有限公司 | Crystal cut-off device, crystal growth equipment and crystal cut-off method |
| CN115635606A (en) * | 2022-11-18 | 2023-01-24 | 浙江晶盛机电股份有限公司 | Crystal cut-off device, crystal growth equipment and crystal cut-off method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201778147U (en) * | 2010-08-11 | 2011-03-30 | 上海昀丰光电技术有限公司 | Sapphire growth device and quick seed-crystal replacement device thereof |
| CN202064036U (en) * | 2011-04-13 | 2011-12-07 | 常州市天龙光电设备有限公司 | Sapphire furnace |
| CN202297848U (en) * | 2011-10-09 | 2012-07-04 | 上海汉虹精密机械有限公司 | Silicon single crystal furnace with double upper furnace bodies |
| WO2012108618A2 (en) * | 2011-02-09 | 2012-08-16 | 주식회사유니드 | Single crystal growth apparatus using microwaves and growth method thereof |
| CN102677158A (en) * | 2011-03-15 | 2012-09-19 | 上海晨安电炉制造有限公司 | Kyropoulos crystal growing furnace with auxiliary chamber structure |
| CN202595329U (en) * | 2012-03-19 | 2012-12-12 | 上海施科特光电材料有限公司 | Full-angle window for single crystal furnace adopting Kyropoulos method |
| CN102978690A (en) * | 2012-12-24 | 2013-03-20 | 苏州工业园区杰士通真空技术有限公司 | Novel sapphire crystal growth furnace body cooling system |
| CN104674344A (en) * | 2015-01-28 | 2015-06-03 | 北京雷生强式科技有限责任公司 | Growth device, growth furnace and preparation method of yttrium lithium fluoride laser crystals |
| CN205711032U (en) * | 2016-04-19 | 2016-11-23 | 黄山市东晶光电科技有限公司 | A kind of kyropoulos sapphire crystal growing furnace that can change seed crystal online |
-
2016
- 2016-04-19 CN CN201610247970.0A patent/CN105648530A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201778147U (en) * | 2010-08-11 | 2011-03-30 | 上海昀丰光电技术有限公司 | Sapphire growth device and quick seed-crystal replacement device thereof |
| WO2012108618A2 (en) * | 2011-02-09 | 2012-08-16 | 주식회사유니드 | Single crystal growth apparatus using microwaves and growth method thereof |
| CN102677158A (en) * | 2011-03-15 | 2012-09-19 | 上海晨安电炉制造有限公司 | Kyropoulos crystal growing furnace with auxiliary chamber structure |
| CN202064036U (en) * | 2011-04-13 | 2011-12-07 | 常州市天龙光电设备有限公司 | Sapphire furnace |
| CN202297848U (en) * | 2011-10-09 | 2012-07-04 | 上海汉虹精密机械有限公司 | Silicon single crystal furnace with double upper furnace bodies |
| CN202595329U (en) * | 2012-03-19 | 2012-12-12 | 上海施科特光电材料有限公司 | Full-angle window for single crystal furnace adopting Kyropoulos method |
| CN102978690A (en) * | 2012-12-24 | 2013-03-20 | 苏州工业园区杰士通真空技术有限公司 | Novel sapphire crystal growth furnace body cooling system |
| CN104674344A (en) * | 2015-01-28 | 2015-06-03 | 北京雷生强式科技有限责任公司 | Growth device, growth furnace and preparation method of yttrium lithium fluoride laser crystals |
| CN205711032U (en) * | 2016-04-19 | 2016-11-23 | 黄山市东晶光电科技有限公司 | A kind of kyropoulos sapphire crystal growing furnace that can change seed crystal online |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109306519A (en) * | 2018-10-30 | 2019-02-05 | 天通银厦新材料有限公司 | A kind of sapphire crystal growing furnace and its seeding methods of carrying about standby seed crystal |
| CN109306519B (en) * | 2018-10-30 | 2023-06-06 | 天通银厦新材料有限公司 | Sapphire crystal growth furnace carrying standby seed crystal and seeding method thereof |
| WO2022052079A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Edge-defined film-fed growth sapphire crystal growth furnace based on seed crystal replacement scheme |
| CN115570689A (en) * | 2022-11-18 | 2023-01-06 | 浙江晶盛机电股份有限公司 | Crystal cut-off device, crystal growth equipment and crystal cut-off method |
| CN115635606A (en) * | 2022-11-18 | 2023-01-24 | 浙江晶盛机电股份有限公司 | Crystal cut-off device, crystal growth equipment and crystal cut-off method |
| CN115570689B (en) * | 2022-11-18 | 2023-03-10 | 浙江晶盛机电股份有限公司 | Crystal cut-off device, crystal growth equipment and crystal cut-off method |
| CN115635606B (en) * | 2022-11-18 | 2023-03-10 | 浙江晶盛机电股份有限公司 | Crystal cut-off device, crystal growth equipment and crystal cut-off method |
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Application publication date: 20160608 |
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